CN103022209A - Manufacturing of efficient dual-junction silicon thin-film solar cell employing novel interlayer metallic oxide - Google Patents
Manufacturing of efficient dual-junction silicon thin-film solar cell employing novel interlayer metallic oxide Download PDFInfo
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- CN103022209A CN103022209A CN201110282533XA CN201110282533A CN103022209A CN 103022209 A CN103022209 A CN 103022209A CN 201110282533X A CN201110282533X A CN 201110282533XA CN 201110282533 A CN201110282533 A CN 201110282533A CN 103022209 A CN103022209 A CN 103022209A
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- film solar
- solar batteries
- high efficiency
- silicon film
- binode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention mainly aims at providing manufacturing of an efficient dual-junction silicon thin-film solar cell employing novel interlayer metallic oxide. The technique is that a metallic oxide is added between a top cell and a bottom cell in the dual-junction silicon thin-film solar cell. The technique aims at obtaining more lights to absorb by the top cell and generating the efficient dual-junction silicon thin-film solar cell.
Description
Technical field
The present invention makes high efficiency binode silicon film solar batteries about a kind of novel metallic intermediate layer oxide, and its purpose is significantly to increase top battery efficiency of light absorption, and then reaches the binode silicon film solar batteries of production cost reduction and high efficiency.
Background technology
Because energy prices are surging, all parts of the world is sought the green energy resource that substitutes all again, and non-crystal silicon solar cell namely is a kind of efficient green energy resource that sunlight is converted to electric energy.
At present, industry adopts traditional unijunction silicon thin film PIN stack architecture processing procedure to make solar cell mostly, but this mode still has the shortcoming of low generating efficiency to exist, and wherein causes the solar cell selling at exorbitant prices, the large factor during effectively universalness is applied to live.
Summary of the invention
Main purpose of the present invention is that a kind of novel metallic intermediate layer oxide is made high efficiency binode silicon film solar batteries, this technical method in the binode silicon film solar batteries the top battery and end battery between increase the layer of metal oxide, its purpose is to make the top battery to obtain more light absorption, and produces high efficiency binode silicon film solar batteries.
A kind of novel metallic intermediate layer oxide is made high efficiency binode silicon film solar batteries, it is characterized in that, has comprised: a transparent glass substrate; One first transparency conducting layer is positioned on this transparency conducting layer; One top battery PIN silicon semiconductor layer is positioned on this first transparency conducting layer; One metal oxide layer is positioned on the battery PIN silicon semiconductor layer of this top; One end battery PIN silicon semiconductor layer is positioned on this metal oxide layer; One second transparency conducting layer is positioned on this end battery PIN silicon semiconductor layer; One outer transparent glass substrate is positioned on this second transparency conducting layer.
Wherein, the glass substrate of this transparent glass substrate material selection superelevation penetration is to increase the ratio of incident light.
Wherein, this top battery PIN silicon semiconductor layer can be selected amorphous silicon semiconductor layer, microcrystalline silicon semiconductor layer or amorphous-microcrystalline silicon semiconductor layer.
Wherein, metal oxide layer is selected the transparent metal oxide layer of all types of antireflections, as: the oxides such as tin, indium, zinc all can, wherein can mix mutually to obtain optimized proportion, reach lifting top battery efficiency of light absorption, and make high efficiency binode silicon film solar batteries.
Make comparisons with the traditional silicon thin film solar cell technologies, effective benefit that the present invention has is: novel metallic intermediate layer oxide used in the present invention is made high efficiency binode silicon film solar batteries, has comprised transparent glass substrate, the first transparency conducting layer, top battery PIN silicon semiconductor layer, metal oxide layer, end battery PIN silicon semiconductor layer, the second transparency conducting layer and outer transparent glass substrate.Utilize novel metal oxide to be used as the intermediate layer, effectively promote the efficiency of light absorption of top battery, and then obtain high efficiency binode silicon film solar batteries, and reduce production costs and reach the purpose that accords with the demands of the market.
Description of drawings:The present invention is further described below in conjunction with drawings and Examples.Fig. 1 is the flow process block schematic diagram of the present invention's Noval double silicon film solar batteries processing procedure.Fig. 2 is the present invention's Noval double silicon film solar batteries structure chart, primary clustering symbol description: 1 ... transparent glass substrate 2 ... the first transparency conducting layer 3 ... top battery PIN silicon semiconductor layer 4 ... metal oxide layer 5 ... end battery PIN silicon semiconductor layer 6 ... the second transparency conducting layer 7 ... outer transparent glass substrate.
Embodiment
Hereby the present invention is cooperated accompanying drawing, be described in detail as follows: with reference to Fig. 1, be the flow chart that the novel metallic intermediate layer oxide of the present invention is made high efficiency binode silicon film solar batteries.
With reference to Fig. 2, be the new structure figure that the novel metallic intermediate layer oxide of the present invention is made high efficiency binode silicon film solar batteries, wherein comprised transparent glass substrate 1, the first transparency conducting layer 2, top battery PIN silicon semiconductor layer 3, metal oxide layer 4, end battery PIN silicon semiconductor layer 5, the second transparency conducting layer 6 and outer transparent glass substrate 7.
In order to obtain high efficiency binode silicon film solar batteries, its light absorbing zone and intermediate layer sequentially storehouse are as follows: top battery PIN silicon semiconductor layer 3, metal oxide layer 4 and end battery PIN silicon semiconductor layer 5.When solar light irradiation during in the PN junction, have part of atoms and obtain energy, and then formation free electron, and the atom that loses electronics will form electric hole, attracts respectively electronics and electric hole by P type and N type semiconductor, and positive electricity and negative electricity are separated, therefore form a potential difference at the two ends of PN junction, then connect circuit at conductive layer, make electronics can by and at the other end of PN junction again in conjunction with electronics and electric hole pair, can utilize wire that electric energy is exported.
Therefore, novel metallic intermediate layer oxide 4 used in the present invention, its purpose is all at the efficiency of light absorption that improves the top battery, and then obtains high efficiency binode silicon film solar batteries, and reduces production costs and reach the purpose that accords with the demands of the market.
More than explanation is just illustrative, nonrestrictive for the purpose of the present invention; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention.
Claims (4)
1. a novel metallic intermediate layer oxide is made high efficiency binode silicon film solar batteries, its structure of this technical method utilizes novel metallic intermediate layer oxide to be deposited between top battery and the end battery, its purpose is to improve top battery efficiency of light absorption, and can obtain high efficiency binode silicon film solar batteries.
2. a kind of novel metallic intermediate layer oxide according to claim 1 is made high efficiency binode silicon film solar batteries, and the glass substrate of transparent glass substrate material selection superelevation penetration wherein is to increase the ratio of incident light.
3. a kind of novel metallic intermediate layer oxide according to claim 1 is made high efficiency binode silicon film solar batteries, wherein this top battery PIN silicon semiconductor layer can be selected amorphous silicon semiconductor layer, microcrystalline silicon semiconductor layer or amorphous-microcrystalline silicon semiconductor layer.
4. a kind of novel metallic intermediate layer oxide according to claim 1 is made high efficiency binode silicon film solar batteries, this metal oxide layer wherein, select the transparent metal oxide layer of all types of antireflections, as: the oxides such as tin, indium, zinc all can, wherein can mix mutually to obtain optimized proportion, reach lifting top battery efficiency of light absorption.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110282533XA CN103022209A (en) | 2011-09-22 | 2011-09-22 | Manufacturing of efficient dual-junction silicon thin-film solar cell employing novel interlayer metallic oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201110282533XA CN103022209A (en) | 2011-09-22 | 2011-09-22 | Manufacturing of efficient dual-junction silicon thin-film solar cell employing novel interlayer metallic oxide |
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| CN103022209A true CN103022209A (en) | 2013-04-03 |
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| CN201110282533XA Pending CN103022209A (en) | 2011-09-22 | 2011-09-22 | Manufacturing of efficient dual-junction silicon thin-film solar cell employing novel interlayer metallic oxide |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733559A (en) * | 2013-12-18 | 2015-06-24 | 宋太伟 | Multilevel extension PN junction thin film solar cell |
| CN107895745A (en) * | 2017-11-14 | 2018-04-10 | 天津理工大学 | A kind of molybdenum disulfide/silicon double-junction solar battery and preparation method thereof |
| CN112349801A (en) * | 2020-10-16 | 2021-02-09 | 泰州隆基乐叶光伏科技有限公司 | Intermediate series layer of laminated battery, production method and laminated battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
| CN1220484A (en) * | 1997-11-27 | 1999-06-23 | 佳能株式会社 | Method of forming microcrystalline sillicon film, photovoltaic element, and method of producing same |
| CN1763977A (en) * | 2004-10-20 | 2006-04-26 | 三菱重工业株式会社 | Thin-film solar cell of tandem type |
| CN101226967A (en) * | 2007-01-18 | 2008-07-23 | 应用材料股份有限公司 | Multi-junction solar cells and methods and apparatuses for forming the same |
-
2011
- 2011-09-22 CN CN201110282533XA patent/CN103022209A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
| CN1220484A (en) * | 1997-11-27 | 1999-06-23 | 佳能株式会社 | Method of forming microcrystalline sillicon film, photovoltaic element, and method of producing same |
| CN1763977A (en) * | 2004-10-20 | 2006-04-26 | 三菱重工业株式会社 | Thin-film solar cell of tandem type |
| CN101226967A (en) * | 2007-01-18 | 2008-07-23 | 应用材料股份有限公司 | Multi-junction solar cells and methods and apparatuses for forming the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733559A (en) * | 2013-12-18 | 2015-06-24 | 宋太伟 | Multilevel extension PN junction thin film solar cell |
| CN107895745A (en) * | 2017-11-14 | 2018-04-10 | 天津理工大学 | A kind of molybdenum disulfide/silicon double-junction solar battery and preparation method thereof |
| CN112349801A (en) * | 2020-10-16 | 2021-02-09 | 泰州隆基乐叶光伏科技有限公司 | Intermediate series layer of laminated battery, production method and laminated battery |
| CN112349801B (en) * | 2020-10-16 | 2023-12-01 | 泰州隆基乐叶光伏科技有限公司 | Intermediate series layer of laminated battery, production method thereof and laminated battery |
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Application publication date: 20130403 |