CN102376817A - Method for preparing semiconductor photoelectric device - Google Patents
Method for preparing semiconductor photoelectric device Download PDFInfo
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- CN102376817A CN102376817A CN2010102514336A CN201010251433A CN102376817A CN 102376817 A CN102376817 A CN 102376817A CN 2010102514336 A CN2010102514336 A CN 2010102514336A CN 201010251433 A CN201010251433 A CN 201010251433A CN 102376817 A CN102376817 A CN 102376817A
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Abstract
The invention discloses a method for preparing a semiconductor photoelectric device, which comprises the following steps: 1) selecting a substrate; 2) preparing a semiconductor homojunction or heterojunction on the substrate by utilizing the processes of epitaxy, crystallizing, sputtering, evaporating, rotary coating, bonding, welding, linking, chemically corroding or etching; and 3) generating an electrode at the top end or bottom end of the semiconductor homojunction or heterojunction, thereby forming a whole semiconductor device by the substrate, the semiconductor homojunction or heterojunction and the electrode. According to the method provided by the invention, semiconductor junctions in various bandwidths can be provided, a wider working spectral region can be covered, the semiconductor junctions can be prepared on the substrates having different specific structures, and the advantages in preparation and performance characteristics of a planar film structure and a nanometer line are combined together, thereby realizing a semiconductor photoelectric device structure having a wider function.
Description
Technical field
The present invention relates to a kind of preparation method of semiconductor photoelectric device, belong to the semiconductor device preparation field.
Background technology
Because the breakthrough of semi-conducting material technology of preparing, particularly along with the breakthrough of the semiconductor crystal extension technology of preparing of nano-scale, the quality of semi-conducting material, performance have all had important breakthrough, make its applied more and more aspect photoelectric device.The patent of solar energy aspect is that 200780048752 active region has the solar cell of the nanostructure with energy wells, the James .C. gold of Sundiode Inc. equals application in 2007 like: application number, and what relate to is a kind of method and apparatus that is used to have the solar cell of gradual change energy wells.The active region of said solar cell comprises nanostructure.Said nanostructure is formed by the material of element that comprises III-V compound semiconductor and change the band gap of said III-V compound semiconductor.But this patent mainly is that the structure of active region itself is a nanometer, and whether be homojunction, heterojunction nanostructure, also do not mention the substrate requirement if not relating to the entire device structure.Another patent: the number of patent application of application in 2009 such as the Jiang Lan of Beijing Institute of Technology is a kind of gallium nitride solar isotope composite micro battery of 200910082827 and preparation method thereof, is about a kind of gallium nitride solar isotope composite micro battery and preparation method thereof.Manufacture method of the present invention at first is coated with one deck optical anti-reflective film in a side of substrate, utilizes the meteorological depositing technology of metal organic-matter chemical at the substrate opposite side then, and two PN junctions back-to-back of growing are successively tied fixedly isotope emitting layer of the outside at P N at last.Whether be homojunction, heterojunction nanostructure, also do not mention the substrate requirement if not relating to the entire device structure.Also having patent is that preparation method and the patent No. of a kind of high-purity nitrogenize gallium nano wire of 200510048197 is the preparation method of a kind of inorganic compound gallium nitride nanowire of 200510048111 like: the patent No.; Being permitted also by Institutes Of Technology Of Taiyuan, society equals application respectively in 2005; Invention all is the preparation generation method for a kind of high-purity nitrogenize gallium nano wire; Whether be homojunction, heterojunction nanostructure, also do not mention the substrate requirement if not relating to the entire device structure.200710173110 employing dry etching of the patent No. prepares the method for gallium nitride nano-wire array; Related to a kind of method of utilizing the dry etching gallium nitride nano-wire array; It is characterized in that having adopted metal Ni nano particle dot array as mask, and the Ni nano particle dot array is made through anodised aluminium.The GaN nano-wire array of made also is suitable for the making like LED or LD photoelectric device.The device architecture of its patent is a nanostructure, but does not also mention the substrate requirement.And there is not a patent requirement of heterojunction or homojunction.The patent No. is 200710062978 unijunction indium gallium nitrogen solar battery structure and manufacture method; Be about a kind of unijunction indium gallium nitrogen solar battery structure; It is characterized in that low temperature gallium nitride nucleating layer be produced on substrate above, this nucleating layer can increase the nucleation density of substrate surface; With a non-doped gallium nitride resilient coating intentionally, reduce the defect concentration of epitaxial loayer, improve crystal mass; Whether be homojunction, heterojunction nanostructure, also do not mention the substrate requirement if not relating to the entire device structure.The patent No. is the pulsed growth of 200780016946 GAN nano wire and application and device in group III nitride semiconductor substrate materials, relates to the pulsed growth of GAN nano wire and application and device in group III nitride semiconductor substrate materials.Exemplary embodiments provide the family's III-semiconductor device of N nano wire that comprises high-quality (also being zero defect) and consistent family III-N nano-wire array with and scaleable manufacture process, the wherein position of each nano wire, orientation, section feature, length and degree of crystallinity Be Controlled accurately.Can use the pulsed growth pattern to make disclosed family III-N nano wire and/or nano-array.But do not mention the substrate requirement.And there is not a patent requirement of heterojunction or homojunction.Nano line array in multiplayer structure of 200610035749 of the patent No.s such as the Ren Shan of Zhongshan University and preparation method thereof, described nano thread structure are the multi-layer nano line that metal/semiconductor or semiconductor/semiconductor are alternately arranged each other, do not mention the substrate requirement.The patent No. of Zhongshan University poplar state application in big 2007 is a kind of heterogeneous p-n nano-line array of 200710027353; Invent a kind of pulsed laser deposition technique that in high temperature and high pressure environment, utilizes and prepared heterogeneous p-n nano-line array and preparation method thereof, do not mentioned the substrate requirement.The patent No. of Chen Xing in 2002 is 02118371 nano linear light-emitting element and display unit; This invention becomes nano crystal line or nano crystal post with semi-conducting material manufacturing; Nano wire grown up go up and be made into the structure of P, N interface at the transparent conductive substrate glass substrate of nesa coating (or be coated with), do not mention the substrate requirement.The patent No. of the Peng Kuiqing of 2008 Beijing normal university is that a kind of silicon nanometer wire solar cell apparatus of 200810088803 discloses the device for converting solar energy that between n type organic substance semiconductor film layer and P type silicon substrate layer, contains p type nano linear carbon array layer, does not mention the substrate requirement.The application number of Wuhan University side country 2006 applications is a kind of n-silicon nanowires/p-conductive organic matter diode of heterogenous pn junction of CN200610124505.4 and preparation method thereof; And application number is a kind of diode of heterogenous pn junction based on silicon nanowires of CN200610019782.9 and preparation method thereof; And application number is patents such as CN200610019781.4 silicon nano line homo pn junction diode and preparation method thereof; Mentioned in the silicon chip preparation having the homogeneity heterojunction of silicon nanowires, but do not mentioned the substrate requirement.
Summary of the invention
The present invention provides a kind of preparation method of semiconductor photoelectric device in order to overcome the shortcoming of prior art.
The present invention can be achieved through taking following technical scheme:
A kind of preparation method of semiconductor photoelectric device may further comprise the steps:
1), selects a kind of substrate;
2), the method with extension, crystallization, sputter, vapor deposition, spin coating, bonding, welding, bonding, chemical corrosion or etching makes semiconductor homojunction or heterojunction on substrate;
3), on the top of semiconductor homojunction or heterojunction or the bottom generate electrode arranged, make substrate, semiconductor homojunction or heterojunction and electrode formation entire semiconductor device.
On the basis of the above, substrate surface according to the invention is coated with conductive layer or dielectric layer.
Said substrate adopts monocrystalline, polycrystalline, amorphous, plural layers or multilayer junction structure, and the thickness of every layer film or knot is from 0.1 nanometer to 100 micron.
Have semiconductor homojunction or heterojunction structure on the said substrate, the quantity of knot is 1 or a plurality of.
Said substrate is SiC, graphite, diamond, sapphire, LiNoO
2, CuInSe
2, AlN, GaN, InN, GaInN, GaAlN, GaAlInN, AlInP, GaAlInP, GaInP, InP, GaP, GaNP, InNP, InAlAsN; AlP, GaAs, InGaAsN, GaAsN, InAsN, InGaAs, InGaAsP, AlGaP, AlAs, CdSe, ZnS, MgO, ZnO, Si, Ge, BeSeTe; BeMgS, BeMgSeS, ZnTeSeS; MgTeSeS, one or more among MgSe or the MgTe.
Said semiconductor homojunction or heterojunction adopt axial arrangement or coaxial configuration, and the quantity of knot is 1 or a plurality of.
Said semiconductor homojunction or heterojunction are graded junction or abrupt junction.
Said semiconductor homojunction or heterojunction adopt nano wire, nano-pillar, nanometer rods, nanotube or tube array, the bar array of axial arrangement or coaxial configuration; Line array; Spacing between the said line array is 1 nanometer～1 centimetre; The length of line array is 1 nanometer～10 centimetre, and diameter is 1 nanometer～200 centimetre, and the thickness of the knot in the nano wire is 0.1 nanometer to 100 micron.
There are organic filler, dielectric film or metal film between said semiconductor homojunction or the heterojunction, perhaps increase the effect of light absorption, anaclasis, optical coupling to play insulation, conduction.
Said semiconductor homojunction or heterojunction are SiC, graphite, diamond, sapphire, LiNoO
2, CuInSe
2, AlN, GaN, InN, GaInN, GaAlN, GaAlInN, AlInP, GaAlInP, GaInP, InP, GaP, GaNP, InNP, InAlAsN; AlP, GaAs, InGaAsN, GaAsN, InAsN, InGaAs, InGaAsP, AlGaP, AlAs, CdSe, ZnS, MgO, ZnO, Si, Ge, BeSeTe; BeMgS, BeMgSeS, ZnTeSeS; MgTeSeS, one or more among MgSe or the MgTe.
Said top electrodes is transparent metal film, transparent semiconductor material, or a kind of in the sandwich construction of semi-conducting material and metal film.
Said electrode is a kind of among metal, GaN, ZnO, MgO, SnO2:F or the ITO
Compared with prior art; The present invention has the following advantages: the present invention can provide the semiconductor junctions of various bandwidth; Can cover the work spectral region of broad; And be prepared on the different substrates that special construction is arranged, combine the advantage on the preparation strong point of planar film structure and nano wire, the operating characteristic, to realize function semiconductor photoelectric device structure widely.
Description of drawings
Fig. 1 is the preparation flow figure of semiconductor photoelectric device of the present invention.
Fig. 2 is an axial arrangement semiconductor photoelectric device sketch map of the present invention.
Fig. 3 is the sketch map of coaxial configuration semiconductor photoelectric device of the present invention.
Embodiment
Describe in detail below in conjunction with the accompanying drawing specific embodiments of the invention.
Embodiment 1
Like Fig. 1, shown in Figure 2, the preparation method of semiconductor photoelectric device of the present invention may further comprise the steps:
At first, select a kind of Si as substrate 1 with multilayered semiconductor homojunction; Then; Method with extension, crystallization, sputter, vapor deposition, spin coating, bonding, welding, bonding, chemical corrosion or etching generates GaN/GaInN nano wire multilayer homojunction/heterostructure 2 on substrate 1; This structure is having several layers thickness doped layer as thin as a wafer with the substrate junction; The last top electrodes 3 that structurally generates transparent metal film makes substrate 1, semiconductor homojunction or heterojunction 2 and electrode constitute entire semiconductor device.
Like Fig. 1, shown in Figure 3; The preparation method of semiconductor photoelectric device of the present invention may further comprise the steps: at first, select a kind of GaN (n)/GaN (p)/tunneling junction/GaInN (n)/GaInN (p) with multilayered semiconductor homojunction/heterojunction as substrate 1; Then, adopt the method for selective epitaxial or selective etch to generate multilayer GaAs/GaInP nano wire coaxial heterojunction structure 2, and make between outer field nano wire and the substrate and separate with dielectric substance film 4; At last, on dielectric substance film 4, plate the electrode 3 of transparent metal film, make substrate 1, semiconductor homojunction or heterojunction 2 and electrode 3 constitute entire semiconductor device.
Other embodiment
On the basis of embodiment 2, the said substrate of present embodiment adopts polycrystalline, amorphous, plural layers or multilayer junction structure, and the thickness of every layer film or knot is from 0.1 nanometer to 100 micron, and backing material can be SiC, graphite, diamond, sapphire, LiNoO
2, CuInSe
2, AlN, GaN, InN, GaInN, GaAlN, GaAlInN, AlInP, GaAlInP, GaInP, InP, GaP, GaNP, InNP, InAlAsN; AlP, GaAs, InGaAsN, GaAsN, InAsN, InGaAs, InGaAsP, AlGaP, AlAs, CdSe, ZnS, MgO, ZnO, Si, Ge, BeSeTe; BeMgS, BeMgSeS, ZnTeSeS; MgTeSeS, one or more among MgSe or the MgTe; Said semiconductor homojunction or heterojunction adopt the graded junction or the abrupt junction of axial arrangement or coaxial configuration, and the quantity of knot is 1 to a plurality of, and its material is SiC, graphite, diamond, sapphire, LiNoO
2, CuInSe
2, AlN, GaN, InN, GaInN, GaAlN, GaAlInN, AlInP, GaAlInP, GaInP, InP, GaP, GaNP, InNP, InAlAsN; AlP, GaAs, InGaAsN, GaAsN, InAsN, InGaAs, InGaAsP, AlGaP, AlAs, CdSe, ZnS, MgO, ZnO, Si, Ge, BeSeTe; BeMgS, BeMgSeS, ZnTeSeS; MgTeSeS, one or more among MgSe or the MgTe; Said electrode is the transparent semiconductor material, or a kind of in the sandwich construction of semi-conducting material and metal film, and its material is a kind of among metal, GaN, ZnO, MgO, SnO2:F or the ITO.The present invention also can remove substrate behind the metal plated film as required when generating homojunction or heterojunction and electrode, make photoelectric device of final formation.
The present invention can provide the semiconductor junctions of various bandwidth; Can cover the work spectral region of broad; And be prepared on the different substrates that special construction is arranged; Combine the advantage on the preparation strong point of planar film structure and nano wire, the operating characteristic, to realize function semiconductor photoelectric device structure widely.
Claims (10)
1. the preparation method of a semiconductor photoelectric device is characterized in that may further comprise the steps:
1), selects a kind of substrate (1);
2), the method with extension, crystallization, sputter, vapor deposition, spin coating, bonding, welding, bonding, chemical corrosion or etching makes semiconductor homojunction or heterojunction (2) on substrate (1);
3), on the top of semiconductor homojunction or heterojunction or the bottom generate electrode (3) arranged, make substrate, semiconductor homojunction or heterojunction (2) and electrode (3) constitute entire semiconductor device.
2. the preparation method of a kind of semiconductor photoelectric device according to claim 1 is characterized in that said substrate (1) surface is coated with conductive layer or dielectric layer (4).
3. the preparation method of a kind of semiconductor photoelectric device according to claim 2 is characterized in that said substrate (1) adopts monocrystalline, polycrystalline, amorphous, plural layers or multilayer junction structure, and the thickness of every layer film or knot is 0.1 nanometer to 100 micron.
4. the preparation method of a kind of semiconductor photoelectric device according to claim 3 is characterized in that described substrate (1) is that semiconductor homojunction or heterojunction are graded junction or abrupt junction.
5. the preparation method of a kind of semiconductor photoelectric device according to claim 4 is characterized in that said substrate (1) is SiC, graphite, diamond, sapphire, LiNoO
2, CuInSe
2, AlN, GaN, InN, GaInN, GaAlN, GaAIInN, AlInP, GaAlInP, GaInP, InP, GaP, GaNP, InNP, InAlAsN; AlP, GaAs, InGaAsN, GaAsN, InAsN, InGaAs, InGaAsP, AlGaP, AlAs, CdSe, ZnS, MgO, ZnO, Si, Ge, BeSeTe; BeMgS, BeMgSeS, ZnTeSeS; MgTeSeS, one or more among MgSe or the MgTe.
6. the preparation method of a kind of semiconductor photoelectric device according to claim 1; It is characterized in that said semiconductor homojunction or heterojunction (2) adopt nano wire, nano-pillar, nanometer rods, nanotube or tube array, the bar array of axial arrangement or coaxial configuration; Line array, the spacing between the said line array are 1 nanometer～1 centimetre, and the length of line array is 1 nanometer～10 centimetre; Diameter is 1 nanometer～200 centimetre, and the thickness of the knot in the nano wire is from 0.1 nanometer to 100 micron.
7. the preparation method of a kind of semiconductor photoelectric device according to claim 6 is characterized in that having organic filler, dielectric film or metal film between said semiconductor homojunction or the heterojunction (2).
8. the preparation method of a kind of semiconductor photoelectric device according to claim 7 is characterized in that said semiconductor homojunction or heterojunction (2) are SiC, graphite, diamond, sapphire, LiNoO
2, CuInSe
2, AlN, GaN, InN, GaInN, GaAlN, GaAlInN, AlInP, GaAlInP, GaInP, InP, GaP, GaNP, InNP, InAlAsN; AlP, GaAs, InGaAsN, GaAsN, InAsN, InGaAs, InGaAsP, AlGaP, AlAs, CdSe, ZnS, MgO, ZnO, Si, Ge, BeSeTe; BeMgS, BeMgSeS, ZnTeSeS; MgTeSeS, one or more among MgSe or the MgTe.
9. the preparation method of a kind of semiconductor photoelectric device according to claim 1 is characterized in that said electrode (3) is transparent metal film, transparent semiconductor material, or in the sandwich construction of semi-conducting material and metal film one or more.
10. the preparation method of a kind of semiconductor photoelectric device according to claim 9 is characterized in that said electrode (3) is one or more among metal, GaN, ZnO, MgO, SnO2:F or the ITO.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809248B1 (en) * | 2007-03-14 | 2008-02-29 | 삼성전기주식회사 | Photovoltaic device using semiconductor heterostructure nanowires and method for manufacturing the same |
| CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel structural silicon nanometer line solar battery |
| CN101700872A (en) * | 2009-10-26 | 2010-05-05 | 中国科学技术大学 | Copper-indium-gallium-selenium nanowire array and preparation method and application thereof |
-
2010
- 2010-08-11 CN CN2010102514336A patent/CN102376817A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809248B1 (en) * | 2007-03-14 | 2008-02-29 | 삼성전기주식회사 | Photovoltaic device using semiconductor heterostructure nanowires and method for manufacturing the same |
| CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel structural silicon nanometer line solar battery |
| CN101700872A (en) * | 2009-10-26 | 2010-05-05 | 中国科学技术大学 | Copper-indium-gallium-selenium nanowire array and preparation method and application thereof |
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