CN117293230A - Gallium arsenide solar cell with omnibearing metal reflector and preparation method thereof - Google Patents
Gallium arsenide solar cell with omnibearing metal reflector and preparation method thereof Download PDFInfo
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- CN117293230A CN117293230A CN202311575239.7A CN202311575239A CN117293230A CN 117293230 A CN117293230 A CN 117293230A CN 202311575239 A CN202311575239 A CN 202311575239A CN 117293230 A CN117293230 A CN 117293230A
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 43
- 239000002184 metal Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 38
- 239000010980 sapphire Substances 0.000 claims abstract description 38
- 238000005516 engineering process Methods 0.000 claims abstract description 20
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 230000005641 tunneling Effects 0.000 claims description 12
- 230000004913 activation Effects 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 241000252506 Characiformes Species 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cells, in particular to a gallium arsenide solar cell with an omnibearing metal reflector and a preparation method thereof. According to the invention, after the GaInP-GaAs-InGaAs sub-battery structure is grown in an inverted mode, the epitaxial layer is turned over to the sapphire substrate by utilizing the transparent bonding technology, the germanium substrate is replaced by the transparent sapphire substrate, then the dielectric film with low refractive index and the metal reflecting mirror are manufactured on the back surface of the battery piece, and the omnibearing reflecting mirror is formed, so that the reliability of the gallium arsenide solar battery is effectively improved, the irradiation resistance and the reflecting capability are strong, the conversion efficiency is high, the overall performance is excellent, and the cost is low.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a gallium arsenide solar cell with an omnibearing metal reflector and a preparation method thereof.
Background
The development of GaAs solar cells began in the 50 s of the last century and has been a history of more than 50 years so far. GaAs solar cell technology has undergone several stages of development from LPE (liquid phase epitaxy) to MOCVD (metal organic chemical vapor deposition), from homoepitaxy to heteroepitaxy, from single junction to multi-junction stacked structures, with increasingly faster development speeds and ever increasing laboratory and industry production efficiencies.
At present, the application field of GaAs solar cells is wider and wider, but a series of problems still exist, such as the GaAs solar cells applied to space aircrafts, and the most used are multi-junction solar cells of GaAs and GaInP materials which are epitaxially grown on a germanium substrate by using an MOCVD technology, so that the conversion efficiency is higher, but the germanium substrate is high in price, poor in mechanical strength and higher in overall cost, and the overall power supply system of the space aircrafts is higher; in the GaAs sub-battery, in order to ensure absorption, the whole thickness is generally more than 3 mu m, the influence of space irradiation is larger, the attenuation is quick, and the irradiation resistance can be improved by thinning the whole thickness of the GaAs sub-battery, but the electrical property is reduced; the DBR reflection layer is added in the epitaxial structure, so that the reduction of the electrical performance can be compensated by the secondary absorption of reflected light to a certain extent, but the mode can increase the thickness of an epitaxial material to cause the increase of stress, and meanwhile, the series resistance can also be increased, and the DBR layer is positioned between the GaAs battery and the base germanium battery in the epitaxial structure to influence the light absorption of the germanium battery; when the GaInP-GaAs-InGaAs structure of the cell is grown in an inverted mode, and the epitaxial layer is turned over by utilizing a metal bonding mode and transferred onto a silicon substrate or a flexible substrate, although the cell can not use a germanium substrate, the mechanical strength of silicon is still relatively poor, and the metal used for the bonding layer is reflected, the inter-diffusion between the metal and the epitaxial layer material can not achieve a particularly remarkable reflecting effect, so the material thickness of the cell can not be reduced, and the irradiation resistance can not be improved easily; in addition, a dielectric film is added on the bonding layer metal, and conductive connection is performed by a mode of opening holes in the dielectric film, but even if holes are formed, the density of the holes is inevitably increased to ensure good electrical property, so that interdiffusion between the metal and an epitaxial layer is increased, and the reflection effect is reduced because the dielectric film is not formed in the opening hole area.
In view of this, it is necessary to develop a high-performance gallium arsenide solar cell with strong irradiation resistance and good reflection effect.
Disclosure of Invention
According to the gallium arsenide solar cell with the omnibearing metal reflecting mirror and the preparation method thereof, the gallium arsenide solar cell uses a sapphire substrate to replace a germanium substrate, an epitaxial layer is turned over to the sapphire substrate by utilizing a transparent bonding technology, and then a dielectric film with a low refractive index and the metal reflecting mirror are manufactured on the back of a cell slice to form the omnibearing reflecting mirror, so that the epitaxial layer can be thinned greatly, the irradiation resistance is improved, sunlight can be reflected in a large range, and light rays transmitted through the epitaxial layer are reflected back into the cell again, and the reflection capacity is improved.
The invention provides a preparation method of a gallium arsenide solar cell with an omnibearing metal reflector, which comprises the following steps:
s1, growing an AlInP corrosion stop layer and a GaAs ohmic contact layer on a GaAs substrate, and then sequentially manufacturing an epitaxial wafer GaInP-GaAs-InGaAs sub-battery structure;
s2, forming a layer of transparent conductive film on the epitaxial wafer by utilizing a magnetron sputtering technology, and forming ohmic contact;
s3, depositing a layer of SiO on the transparent conductive film 2 ；
S4, to SiO 2 Carrying out chemical mechanical polishing on the layer, then carrying out surface activation treatment, and simultaneously carrying out activation treatment on a sapphire substrate;
s5, bonding the epitaxial wafer after surface activation with a sapphire substrate, removing the original GaAs substrate by using wet etching liquid after bonding, and etching the AlInP etching stop layer by using HCl to expose the GaAs ohmic contact layer;
s6, etching a light receiving table board by utilizing a photoetching technology, wherein the etching is stopped on the transparent conductive film;
s7, evaporating an electrode, wherein an N electrode on the table top is a comb-shaped electrode, and a P electrode is connected to the transparent conductive film;
s8, evaporating a front anti-reflection film on the surface of the battery piece;
s9, thinning and polishing the sapphire substrate;
s10, evaporating a dielectric film on a sapphire substrate with a polished surface, and evaporating a reflecting metal mirror on the dielectric film;
s11, cutting the sapphire substrate by utilizing a laser invisible cutting technology to form the single gallium arsenide solar cell.
According to the preparation method, an epitaxial growth technology is used, a GaInP-GaAs-InGaAs sub-cell structure is sequentially grown on a GaAs substrate in an epitaxial mode, a transparent bonding technology is utilized, an epitaxial layer is turned over to a transparent sapphire substrate, the sapphire substrate is used for replacing a germanium substrate, then a low-refractive-index dielectric film and a metal reflecting mirror are manufactured on the back surface of a cell slice to form an omnibearing reflecting mirror, sunlight can be reflected in a large range, light transmitted through the epitaxial layer is reflected back into the cell again, secondary absorption is promoted, and conversion efficiency is improved; meanwhile, due to the existence of the omnibearing reflecting mirror, the epitaxial layer can be greatly thinned, and the irradiation resistance is improved while the stability of the electrical performance is ensured; the dielectric film and the reflecting metal mirror on the whole back of the battery can improve the reflecting capacity and ensure good reflecting effect; in addition, the sapphire substrate is used for replacing an expensive germanium substrate, so that the mechanical strength is improved, and meanwhile, the cost can be greatly reduced.
In step S1 of the above technical solution, the sub-cells are connected by a tunneling junction, where the tunneling junction is a GaAs homogeneous tunneling junction or an AlGaAs/GaInP heterogeneous tunneling junction.
Further, in step S2 of the above technical solution, the transparent conductive film is made of ITO (indium tin oxide) or AZO (aluminum doped zinc oxide); other transparent conductive materials are also possible.
Further, in step S4 of the above technical solution, siO 2 The surface roughness after polishing is lower than 5nm, and the activating solution is KOH or piranha solution.According to the technical scheme, the surface activation is performed by using the activating liquid, so that the number of activated bonds on the surface can be increased, and the bonding efficiency is improved.
Further, in the step S5 of the above technical solution, the bonding conditions are as follows: the bonding pressure is 15000kg-20000kg, and the temperature is 450-510 ℃.
Further, in step S5 of the above technical solution, the wet etching solution is a non-hydrochloric acid solution, and is NH 4 Mixed solution of OH and hydrogen peroxide or H 2 SO 4 Mixing with hydrogen peroxide solution.
In step S7 of the above technical solution, the materials of the N electrode and the P electrode are Au/augeneni in sequence.
Further, in the step S9 of the above technical solution, the thickness of the sapphire substrate is controlled to be 65 μm-75 μm.
Further, in step S10 of the above technical solution, the dielectric film is MgF 2 Or SiO 2 The refractive index is 1.2-1.45, and the thickness can be properly adjusted according to the requirements of an actual battery; the reflecting metal mirror is an Au mirror or an Ag mirror. In the technical scheme, the medium film with low refractive index and the metal with high reflectivity are combined into the omnibearing reflecting mirror, so that the omnibearing reflecting mirror has good reflecting effect on incident light with the angle of 0-90 degrees.
The invention also provides a gallium arsenide solar cell with the omnibearing metal reflector, which is prepared by the preparation method, and the gallium arsenide solar cell sequentially comprises a reflecting metal mirror, a dielectric film, a sapphire substrate, a transparent conductive bonding layer, an epitaxial structure, a P electrode, an N electrode and an anti-reflection film from bottom to top; the dielectric film and the reflecting metal mirror form an omnibearing reflecting mirror. The invention forms the omnibearing reflecting mirror by the dielectric film and the reflecting metal mirror, so as to reflect sunlight in a large range, reflect light transmitted through the epitaxial layer back into the battery again, improve the reflecting capacity, have good reflecting effect, and can greatly thin battery materials and improve the irradiation resistance.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, after the GaInP-GaAs-InGaAs sub-cell structure of the epitaxial wafer is grown in an inverted mode, the epitaxial wafer is turned over to the sapphire substrate by utilizing a transparent bonding technology, the germanium substrate is replaced by the transparent sapphire substrate, then a dielectric film with low refractive index and a metal reflecting mirror are manufactured on the back surface of the cell, and an omnibearing reflecting mirror is formed, so that the defects of the existing gallium arsenide solar cell are effectively solved.
2. According to the invention, the germanium substrate is replaced by the transparent sapphire substrate, so that the mechanical property of the substrate can be improved, and the cost can be greatly reduced; the omnibearing reflecting mirror is made of the dielectric film and the metal reflecting mirror, so that the epitaxial layer can be thinned greatly, the irradiation resistance can be improved under the condition of ensuring the electrical performance, meanwhile, sunlight can be reflected in a large range, light transmitted through the epitaxial layer can be reflected back into the battery again, secondary absorption is promoted, the conversion efficiency is improved, and the reflecting capacity is improved.
3. The manufacturing method is simple, and the obtained single gallium arsenide solar cell for space with the omnibearing metal reflecting mirror has the advantages of low cost, good reliability, strong irradiation resistance and reflecting capability, high conversion efficiency and excellent overall performance.
Drawings
FIG. 1 is a schematic cross-sectional view of a gallium arsenide solar cell of the present invention;
fig. 2 is a schematic top view of the gallium arsenide solar cell of the present invention.
The reference numerals in the schematic drawings indicate:
1. a reflective metal mirror; 2. a dielectric film; 3. a sapphire substrate; 4. a transparent conductive bonding layer; 5. an epitaxial structure; 6. a P electrode; 7. an N electrode; 8. an antireflection film; 9. a light receiving table.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the application, its application, or uses. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should be understood that, the terms "first," "second," etc. are used for defining the components, and are merely for convenience in distinguishing the corresponding components, and if not otherwise stated, the terms are not to be construed as limiting the scope of the present application.
In the description of the present application, it should be understood that, where azimuth terms such as "front, rear, upper, lower, left, right", "transverse, vertical, horizontal", and "top, bottom", etc., indicate azimuth or positional relationships generally based on those shown in the drawings, only for convenience of description and simplification of the description, these azimuth terms do not indicate and imply that the apparatus or elements referred to must have a specific azimuth or be constructed and operated in a specific azimuth, and thus should not be construed as limiting the scope of protection of the present application; the orientation word "inner and outer" refers to inner and outer relative to the contour of the respective component itself.
Referring to fig. 1 to 2, it should be noted that the illustrations provided in the present embodiment are only schematic illustrations of the basic concept of the present invention, and only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Some embodiments of the present invention provide a gallium arsenide solar cell with an omnidirectional metal reflector, the structural schematic diagram of which is shown in fig. 1, wherein the gallium arsenide solar cell is sequentially, from bottom to top, a reflective metal mirror 1, a dielectric film 2, a sapphire substrate 3, a transparent conductive bonding layer 4, an epitaxial structure 5, a P electrode 6, an N electrode 7, and an anti-reflection film 8;
specifically, the reflecting metal mirror and the dielectric film form an omnibearing reflecting mirror; the omnibearing reflecting mirror can reflect sunlight in a large range, so that light transmitted through an epitaxial layer is reflected back into the battery again, secondary absorption is promoted, conversion efficiency is improved, and reflection effect is ensured; the method can improve the irradiation resistance and ensure the stability of the electrical performance under the condition of greatly thinning the battery material.
Specifically, the invention replaces expensive germanium substrate with sapphire substrate, which not only can greatly reduce cost, but also can improve mechanical property of the substrate.
Still further embodiments of the present invention provide a method for manufacturing a gallium arsenide solar cell having an omni-directional metal mirror, comprising the steps of:
s1, growing an AlInP corrosion stop layer and a GaAs ohmic contact layer on a GaAs substrate, and then sequentially manufacturing an epitaxial wafer GaInP-GaAs-InGaAs sub-battery structure;
specifically, on an N-type GaAs substrate, an AlInP corrosion stop layer and a GaAs ohmic contact layer are firstly grown, and then an MOCVD technology is used for sequentially manufacturing each sub-cell structure of GaInP-GaAs-InGaAs, wherein all sub-cells are connected through a tunneling junction, and the tunneling junction can be a GaAs homogeneous tunneling junction or an AlGaAs/GaInP heterogeneous tunneling junction. The overall cell structure ends with a P-type material.
S2, forming a layer of transparent conductive film on the epitaxial wafer by utilizing a magnetron sputtering technology, and forming ohmic contact;
specifically, the cell epitaxial structure is firstly cleaned, and then a transparent conductive film is deposited on the surface of the epitaxial structure by utilizing the technologies of magnetron sputtering or thermal evaporation and the like, wherein the transparent conductive film material can be ITO, AZO or other transparent conductive materials, and then the transparent conductive film material is annealed to form ohmic contact.
S3, depositing a layer of SiO on the transparent conductive film 2 ；
Specifically, a layer of SiO is deposited on the transparent conductive film by PECVD (plasma enhanced chemical vapor deposition) or electron beam evaporation 2 The overall thickness is 2 μm-3 μm.
S4, to SiO 2 Carrying out chemical mechanical polishing on the layer, then carrying out surface activation treatment, and simultaneously carrying out activation treatment on a sapphire substrate;
specifically, after polishing, the surface roughness needs to be lower than 5nm; the surface activation is carried out by activating liquid such as KOH or piranha solution, so that the number of activated bonds on the surface is increased, the sapphire substrate is activated while the epitaxial wafer is activated, and the same activating liquid can be used as the activating liquid.
S5, bonding the epitaxial wafer after surface activation with a sapphire substrate, removing the original GaAs substrate by using wet etching liquid after bonding, and etching the AlInP etching stop layer by using HCl to expose the GaAs ohmic contact layer;
specifically, bonding the activated epitaxial wafer and the sapphire substrate under a certain pressure and temperature. Preferably, the bonding pressure is 15000kg-20000kg and the temperature is 450 ℃ to 510 ℃. After bonding, removing the original GaAs substrate by using a wet etching solution to expose the AlInP etching stop layer, wherein the etching solution can be NH 4 Mixed solution of OH and hydrogen peroxide or H 2 SO 4 Mixed with hydrogen peroxide or common GaAs corrosive liquid, but cannot contain hydrochloric acid, and then etching the AlInP corrosion stop layer by using HCl to expose the GaAs ohmic contact layer.
S6, etching the light receiving table top 9 by utilizing a photoetching technology, wherein the etching is stopped on the transparent conductive film; specifically, a light receiving mesa pattern is first made by using a photolithography technique, and then the light receiving mesa is etched using an ICP (inductively coupled plasma etching) technique to expose the transparent conductive film.
S7, evaporating an electrode, wherein an N electrode on a table top is a comb-shaped electrode, a P electrode is connected to a transparent conductive film, and a schematic diagram of a top view structure of the evaporation electrode is shown in FIG. 2;
specifically, manufacturing a front welding spot electrode, manufacturing a front welding spot pattern by using a negative adhesive stripping mode, manufacturing an electrode pattern by using negative adhesive, manufacturing an electrode material by using an electron beam evaporation technology or magnetron sputtering or other modes, manufacturing a comb-shaped electrode on a table top on ohmic contact GaAs to form an N electrode, and manufacturing a P electrode pattern on an exposed transparent conductive film to form a P electrode; then removing the photoresist, and stripping out electrode patterns, wherein the electrode materials are metals such as Au/AuGeNi; annealing the epitaxial structure using an annealing furnace, wherein the annealing conditions are: vacuum or N 2 And (3) environment is 300-350 ℃ for 10min.
S8, evaporating a front anti-reflection film on the surface of the battery piece; specifically, an anti-reflection film is deposited on the surface of the battery piece, and then the anti-reflection film on the contact point surface is exposed by using a photoetching mode.
S9, thinning and polishing the sapphire substrate; specifically, the final thickness of the sapphire substrate is controlled to be 65 μm-75 μm.
S10, evaporating a dielectric film on a sapphire substrate with a polished surface, and evaporating a reflecting metal mirror on the dielectric film; specifically, a layer of dielectric film material with low refractive index is deposited on the polished sapphire substrate, and the dielectric film material can be MgF 2 Or SiO 2 And then a layer of reflecting metal mirror is manufactured on the dielectric film, wherein the reflecting metal mirror can be an Au mirror or an Ag mirror and other metals according to actual needs, and the reflecting metal mirror and the dielectric film with low refractive index form an omnibearing reflecting mirror, so that sunlight can be reflected in a large range, light rays penetrating through the epitaxial layer are reflected back into the battery again, secondary absorption is promoted, conversion efficiency is improved, good reflection effect is guaranteed, and meanwhile, irradiation resistance is improved by greatly thinning the epitaxial structure without affecting electrical performance.
S11, cutting the sapphire substrate by utilizing a laser invisible cutting technology to form the single gallium arsenide solar cell.
In summary, according to the invention, the epitaxial layer is turned over onto the sapphire substrate by utilizing the transparent bonding technology, the sapphire substrate is used for replacing the germanium substrate, and then the dielectric film with low refractive index and the metal reflector are manufactured on the back of the battery piece to form the omnibearing reflector, so that the epitaxial structure can be greatly thinned, the irradiation resistance is improved, sunlight can be reflected in a large range, light transmitted through the epitaxial layer is reflected back into the battery again, the reflection capacity is improved, and the single gallium arsenide solar battery with the omnibearing metal reflector for space is obtained, and has the advantages of low cost, good reliability, strong irradiation resistance and reflection capacity, high conversion efficiency and excellent overall performance.
Finally, it should be emphasized that the foregoing description is merely illustrative of the preferred embodiments of the invention, and that various changes and modifications can be made by those skilled in the art without departing from the spirit and principles of the invention, and any such modifications, equivalents, improvements, etc. are intended to be included within the scope of the invention.
Claims (10)
1. The preparation method of the gallium arsenide solar cell with the omnibearing metal reflecting mirror is characterized by comprising the following steps of:
s1, growing an AlInP corrosion stop layer and a GaAs ohmic contact layer on a GaAs substrate, and then sequentially manufacturing an epitaxial wafer GaInP-GaAs-InGaAs sub-battery structure;
s2, forming a layer of transparent conductive film on the epitaxial wafer by utilizing a magnetron sputtering technology, and forming ohmic contact;
s3, depositing a layer of SiO on the transparent conductive film 2 ；
S4, to SiO 2 Carrying out chemical mechanical polishing on the layer, then carrying out surface activation treatment, and simultaneously carrying out activation treatment on a sapphire substrate;
s5, bonding the epitaxial wafer after surface activation with a sapphire substrate, removing the original GaAs substrate by using wet etching liquid after bonding, and etching the AlInP etching stop layer by using HCl to expose the GaAs ohmic contact layer;
s6, etching a light receiving table board by utilizing a photoetching technology, wherein the etching is stopped on the transparent conductive film;
s7, evaporating an electrode, wherein an N electrode on the table top is a comb-shaped electrode, and a P electrode is connected to the transparent conductive film;
s8, evaporating a front anti-reflection film on the surface of the battery piece;
s9, thinning and polishing the sapphire substrate;
s10, evaporating a dielectric film on a sapphire substrate with a polished surface, and evaporating a reflecting metal mirror on the dielectric film;
s11, cutting the sapphire substrate by utilizing a laser invisible cutting technology to form the single gallium arsenide solar cell.
2. The method according to claim 1, wherein in step S1, the sub-cells are connected by a tunneling junction, and the tunneling junction is a GaAs homogeneous tunneling junction or an AlGaAs/GaInP heterogeneous tunneling junction.
3. The method according to claim 1, wherein in step S2, the transparent conductive film is made of ITO or AZO.
4. The method according to claim 1, wherein in step S4, siO 2 The surface roughness after polishing is lower than 5nm, and the activating solution is KOH or piranha solution.
5. The method according to claim 1, wherein in step S5, the bonding conditions are: the bonding pressure is 15000kg-20000kg, and the temperature is 450-510 ℃.
6. The method according to claim 1, wherein in step S5, the wet etching solution is a non-hydrochloric acid solution, and is NH 4 Mixed solution of OH and hydrogen peroxide or H 2 SO 4 Mixing with hydrogen peroxide solution.
7. The method according to claim 1, wherein in step S7, the N electrode and the P electrode are made of Au/AuGeNi in order.
8. The method according to claim 1, wherein the thickness of the sapphire substrate is controlled to be 65 μm to 75 μm in step S9.
9. The method according to claim 1, wherein in step S10, the dielectric film is MgF 2 Or SiO 2 Refractive index is 1.2-1.45; the reflecting metal mirror is an Au mirror or an Ag mirror.
10. A gallium arsenide solar cell with an omnibearing metallic reflector, prepared by the preparation method of any one of claims 1-9, characterized in that the gallium arsenide solar cell comprises a reflective metallic reflector, a dielectric film, a sapphire substrate, a transparent conductive bonding layer, an epitaxial structure, a P electrode, an N electrode and an antireflection film from bottom to top in sequence; the dielectric film and the reflecting metal mirror form an omnibearing reflecting mirror.
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