CN104269447B - A kind of polysilicon solar cell plate - Google Patents
A kind of polysilicon solar cell plate Download PDFInfo
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- CN104269447B CN104269447B CN201410480876.0A CN201410480876A CN104269447B CN 104269447 B CN104269447 B CN 104269447B CN 201410480876 A CN201410480876 A CN 201410480876A CN 104269447 B CN104269447 B CN 104269447B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of polysilicon solar cell plate, including the housing with multiple structure, in housing, bottommost is provided with double-layered polycrystal silicon substrate, is upwards sequentially provided with the first CNT, antireflective film, polysilicon absorbed layer, emission layer, TCO glass and the second CNT on described multicrystalline silicon substrate；Topmost it is provided with multiple electrode outside described housing。The advantages such as this battery has simple in construction, and manufacturing process is simple。Additionally, owing to adopting carbon nano tube structure as photoelectric conversion material, it is possible to saturated partial suspension key, sunlight is had good light transmission by carbon nano tube structure simultaneously, adopt carbon nano tube structure as upper electrode, it is possible to improve the photoelectric transformation efficiency of solaode；And carbon nano tube structure plays opto-electronic conversion and the dual function of upper electrode in solar cells, and without phosphorus or arsenic layer, simple in construction。
Description
Technical field
The invention belongs to solar energy and utilize technical field, particularly relate to a kind of polysilicon solar cell plate。
Background technology
Energy shortage and environmental pollution are century encountered two significant problems of the mankind, become the bottleneck of international community's economic development。Solar energy provides, as the regenerative resource of cleanliness without any pollution, the preferred embodiments solving the two problem。At present, how to develop photoelectric transformation efficiency height, life-span length, stable performance and solar cell with low cost and cause global extensive concern。Therefore, based on the needs of era development, solar cell has wide development space。
Solar energy power generating market is vigorously developed, and between past 10 years, solar cell market increases rapidly with the ratio of 40% every year, and wherein crystal-silicon solar cell occupies the market share of solar cell nearly 90%。In crystalline silicon solar cell modules, the cost of silicon wafer accounts for the 50% of solar cell totle drilling cost, even if production technology constantly progresses greatly and development!The preparation cost of crystal-silicon solar cell is greatly reduced further also up to the limit；Therefore, filming or thin layer becoming reduce the Main Means of solar cell cost and development trend。Thin film solar cell (TFSC) relatively crystal-silicon solar cell, has low light level function admirable, raw materials consumption is greatly reduced and the advantage such as cost is low。Further, TFSC also can be prepared on flexible substrates, have good toughness, collapsible, rollable and can the advantage such as large area production, can be applicable to the surfaces such as clothes, vehicle glass, aircraft and building future。
But there is the problem that energy conversion efficiency is relatively low and complicated process of preparation in traditional thin film solar cell, film thickness need further compression。
The energy conversion efficiency of the polysilicon thin-film solar battery prepared in current laboratory has reached 19%, but really to realize the extensive industrialization of the polysilicon thin-film solar battery of high-efficiency and low-cost, also need the polysilicon membrane prepared must be thin as far as possible and adopt cheap substrate。
It addition, the structure of existing polysilicon solar cell is complicated, and, in the growth course of multicrystalline silicon substrate, due to the effect of thermal stress, substantial amounts of defect can be produced in crystal grain。Wherein, dangling bonds are one of major defects in polysilicon, are present in the domain boundary place of polysilicon, become the trapping centre of carrier, cause that carrier mobility declines。And the existence of dangling bonds increases the recombination losses of electron-hole, cause that the photoelectric transformation efficiency of obtained solaode is low。In order to increase the mobility of carrier, improve photoelectric transformation efficiency。Generally deposit a phosphorus or god's layer at the upper surface of described multicrystalline silicon substrate so that it is with described multicrystalline silicon substrate effect to form doped silicon layer then, the upper surface at described doped silicon layer forms metal electrode by silk screen printing。But, forming doped silicon layer need to carry out under the high temperature conditions, complex process, it addition, the metal electrode width that silk screen printing is formed is relatively big, causes this light area relatively big, causes that the photoelectric transformation efficiency of obtained solaode is low。
Summary of the invention
It is an object of the invention to provide that a kind of manufacturing process is simple, simple in construction, film thickness are low, the polysilicon solar cell plate that photoelectric transformation efficiency is high。
A kind of polysilicon solar cell plate of the present invention, including the housing with multiple structure, in housing, bottommost is provided with double-layered polycrystal silicon substrate, is upwards sequentially provided with the first CNT, antireflective film, polysilicon absorbed layer, emission layer, TCO glass and the second CNT on described multicrystalline silicon substrate；Topmost it is provided with multiple electrode outside described housing。
Improving further, described TCO glass is formed by uniformly plating the conductive oxide film of layer of transparent by surface of plate glass。
Improving further, described first CNT, the second carbon nano tube structure are identical, by carbon nanotube long line composition parallel to each other。
The beneficial effects of the present invention is:
The present invention employs heavy doping technique in launch site, and launch site heavy doping can form top layer shallow junction heavy doping, substantially increases the energy conversion efficiency of solaode, has saved cost；The advantages such as this battery also has simple in construction, and manufacturing process is simple。Preparation technology is simple, can be further developed into bigger active-matrix display screen；Polycrystalline silicon thin film solar cell structure containing TCO can greatly improve the collection rate of photo-generated carrier。Additionally, owing to adopting carbon nano tube structure as photoelectric conversion material, it is possible to saturated partial suspension key, sunlight is had good light transmission by carbon nano tube structure simultaneously, adopt carbon nano tube structure as upper electrode, it is possible to improve the photoelectric transformation efficiency of solaode；And carbon nano tube structure plays opto-electronic conversion and the dual function of upper electrode in solar cells, and without phosphorus or arsenic layer, simple in construction。
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention。
Detailed description of the invention
As shown in Figure 1, a kind of polysilicon solar cell plate of the present invention, including the housing 1 with multiple structure, in housing 1, bottommost is provided with double-layered polycrystal silicon substrate 2, is upwards sequentially provided with the first CNT 3, antireflective film 4, polysilicon absorbed layer 5, emission layer 6, TCO glass 7 and the second CNT 8 on described multicrystalline silicon substrate 2；Topmost it is provided with multiple electrode 9 outside described housing。
Described TCO glass 7 is formed by uniformly plating the conductive oxide film of layer of transparent by surface of plate glass。
Described first CNT the 3, second CNT 8 structure is identical, by carbon nanotube long line composition parallel to each other。
The present invention employs heavy doping technique in launch site, and launch site heavy doping can form top layer shallow junction heavy doping, substantially increases the energy conversion efficiency of solaode, has saved cost；The advantages such as this battery also has simple in construction, and manufacturing process is simple。Use glass substrate, not only have that with low cost, nonhazardous, light transmission be excellent, chemically stable and an easy advantage such as recovery, also there is certain thermostability and mechanical strength；Preparation technology is simple, can be further developed into bigger active-matrix display screen；Polycrystalline silicon thin film solar cell structure containing TCO can greatly improve the collection rate of photo-generated carrier。Additionally, owing to adopting carbon nano tube structure as photoelectric conversion material, it is possible to saturated partial suspension key, sunlight is had good light transmission by carbon nano tube structure simultaneously, adopt carbon nano tube structure as upper electrode, it is possible to improve the photoelectric transformation efficiency of solaode；And carbon nano tube structure plays opto-electronic conversion and the dual function of upper electrode in solar cells, and without phosphorus or arsenic layer, simple in construction。
The invention provides a kind of polysilicon solar cell plate; the above be only the present invention be preferable to carry out method; should be understood that; for those skilled in the art; under the premise without departing from the principles of the invention; can also making some improvement, these improvement also should be regarded as protection scope of the present invention。
Claims (3)
1. a polysilicon solar cell plate, it is characterized in that, including the housing (1) with multiple structure, housing (1) interior bottommost is provided with double-layered polycrystal silicon substrate (2), is upwards sequentially provided with the first CNT (3), antireflective film (4), polysilicon absorbed layer (5), emission layer (6), TCO glass (7) and the second CNT (8) on described multicrystalline silicon substrate (2)；Topmost it is provided with multiple electrode (9) outside described housing。
2. polysilicon solar cell plate according to claim 1, it is characterised in that described TCO glass (7) is formed by uniformly plating the conductive oxide film of layer of transparent by surface of plate glass。
3. polysilicon solar cell plate according to claim 1, it is characterised in that described first CNT (3), the second CNT (8) structure are identical, by carbon nanotube long line composition parallel to each other。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410480876.0A CN104269447B (en) | 2014-09-19 | 2014-09-19 | A kind of polysilicon solar cell plate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410480876.0A CN104269447B (en) | 2014-09-19 | 2014-09-19 | A kind of polysilicon solar cell plate |
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| Publication Number | Publication Date |
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| CN104269447A CN104269447A (en) | 2015-01-07 |
| CN104269447B true CN104269447B (en) | 2016-06-22 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106972067A (en) * | 2017-05-09 | 2017-07-21 | 无锡赛晶太阳能有限公司 | A kind of polysilicon solar cell |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562204A (en) * | 2008-04-18 | 2009-10-21 | 清华大学 | Solar energy battery |
| CN101820012A (en) * | 2010-04-09 | 2010-09-01 | 上海交通大学 | Silicon solar cell with surface assembled with carbon nano tube |
| CN102414840A (en) * | 2009-04-30 | 2012-04-11 | 汉阳大学校产学协力团 | Silicon solar cell comprising a carbon nanotube layer |
| CN102437226A (en) * | 2011-12-13 | 2012-05-02 | 清华大学 | Carbon nanotube-silicon film laminated solar battery and preparation method thereof |
| CN202454563U (en) * | 2011-12-29 | 2012-09-26 | 蔡敏华 | Solar battery |
| CN103383970A (en) * | 2012-05-03 | 2013-11-06 | 大连艾珂光电技术有限公司 | Polycrystalline silicon solar cell panel |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209270A (en) * | 2002-01-15 | 2003-07-25 | Toyota Central Res & Dev Lab Inc | Carbon photoelectric element and its manufacturing method |
| CN101527328B (en) * | 2008-03-05 | 2012-03-14 | 鸿富锦精密工业（深圳）有限公司 | Solar cell and manufacturing method thereof |
| JP2012191076A (en) * | 2011-03-11 | 2012-10-04 | Dowa Holdings Co Ltd | Solar power generation apparatus and manufacturing method of the same |
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2014
- 2014-09-19 CN CN201410480876.0A patent/CN104269447B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562204A (en) * | 2008-04-18 | 2009-10-21 | 清华大学 | Solar energy battery |
| CN102414840A (en) * | 2009-04-30 | 2012-04-11 | 汉阳大学校产学协力团 | Silicon solar cell comprising a carbon nanotube layer |
| CN101820012A (en) * | 2010-04-09 | 2010-09-01 | 上海交通大学 | Silicon solar cell with surface assembled with carbon nano tube |
| CN102437226A (en) * | 2011-12-13 | 2012-05-02 | 清华大学 | Carbon nanotube-silicon film laminated solar battery and preparation method thereof |
| CN202454563U (en) * | 2011-12-29 | 2012-09-26 | 蔡敏华 | Solar battery |
| CN103383970A (en) * | 2012-05-03 | 2013-11-06 | 大连艾珂光电技术有限公司 | Polycrystalline silicon solar cell panel |
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| CN104269447A (en) | 2015-01-07 |
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Effective date of registration: 20160510 Address after: 214251 Yixing City, Jiangsu Province, the town of Lin industrial concentration zone C Applicant after: Wuxi Saijing Solar Co., Ltd. Address before: 214200, Wuxi, Jiangsu province Yixing City Fang Qiao Industrial Concentration Zone No. 8 Applicant before: Wuxi Zhongneng Jingke New Energy Technology Co., Ltd. |
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