CN105067034B - A kind of graphene/silicon array intelligent Temperature Humidity Sensor - Google Patents
A kind of graphene/silicon array intelligent Temperature Humidity Sensor Download PDFInfo
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- CN105067034B CN105067034B CN201510442058.6A CN201510442058A CN105067034B CN 105067034 B CN105067034 B CN 105067034B CN 201510442058 A CN201510442058 A CN 201510442058A CN 105067034 B CN105067034 B CN 105067034B
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Abstract
The invention discloses a kind of graphene/silicon array intelligent Temperature Humidity Sensor, described humidity sensor includes power module, array Temperature Humidity Sensor module, current detection module, A/D modular converters, microprocessor module, input module, output module.Described array Temperature Humidity Sensor module includes n-type silicon matrix, silicon dioxide insulating layer, 2 × 2 array silicon windows, Graphene, top electrode and hearth electrode.Study on Intelligent Sensors of Temperature of the invention is based on graphene/silicon carbide Schottky junction structure, and the graphene/silicon carbide Schottky junction has notable difference with conventional metals/semiconductor Schottky, fast with how sub- transmission speed, the features such as being quick on the draw.Temperature Humidity Sensor of the invention can operate with smart mobile phone using unique array architecture, and intelligence is wearable, in the middle of the sensor needed for the equipment such as smart home.
Description
Technical field
The invention belongs to the new multi parameter intallingent sensor application field of Graphene, and in particular to a kind of graphene/silicon battle array
Column Study on Intelligent Sensors of Temperature.
Background technology
Temperature and the two big major parameters that humidity is under environment for human survival.The temperature of atmospheric environment can use Celsius temperature,
Fahrenheit temperature or absolute temperature are weighed；Humidity generally can use absolute humidity, and relative humidity, humidity ratio is weighed.Humidity dependence
In temperature conditionss, so humidity sensor generally also can test temperature, formation integrated form Temperature Humidity Sensor.Temperature Humidity Sensor
For measuring the temperature value and rh value under the conditions of uniform temperature.This kind of sensor is to industrial production control, biological medicine
The aspects such as product, agricultural automation have extreme influence.
Moisture measurement is one of famous problem in world's metering field all the time, and tracing it to its cause is humidity and temperature is one
Correlation function, the affect humidity measurement result with being changed significantly of temperature.The measurement of humidity is related to considerably complicated physics-change
Theory is analyzed and equation is calculated.Common humidity measuring method has：Dynamic method（Double platen presses, dual-temperature process, shunting）, static method
（Saturated salt method, sulfuric acid process）, dew point method, measurement with wet and electronic sensor method.
Traditional dynamic method is high to the purity requirements of test system and environment, and the precision of static method measurement is poor, electricity
Minor sensor can preferably be applied in electronic information technology and industry using semiconductor technology, and industry demand is big, this hair
Bright graphene array formula Temperature Humidity Sensor belongs to electronic sensor method, the method while test temperature and humidity, improve
The sensitivity of sensor and precision.
The content of the invention
The purpose of the present invention is to solve the shortcomings of the prior art, there is provided a kind of sensitivity and high precision, and integrated can make
Graphene/silicon array intelligent Temperature Humidity Sensor.
Graphene/silicon array intelligent Temperature Humidity Sensor of the invention, including power module, array temperature and humidity sensing
Device module, current detection module, A/D modular converters, microprocessor module, input module and output module；
Input module is used for signal input and is controlled with providing signal to microprocessor module, current detection module detection array
Electric current in formula Temperature Humidity Sensor module, and by A/D modular converters by signal transmission to microprocessor module, microprocessor
By output module output temperature and humidity after resume module, power module gives each module for power supply.
Described input module can be button, touch-screen, bluetooth or network communication interface.
Described output module can be LCDs, touch-screen, bluetooth or network communication interface.
Described array Temperature Humidity Sensor module includes n-type silicon matrix and is covered in the two of n-type silicon body upper surface
Silica separation layer, is provided with to array 2 × 2 silicon windows, the two of each silicon thereabout on silica separation layer
The upper surface of silica separation layer covers a top electrode, and graphite is coated with each silicon window and respective top electrode top
Alkene, the border of Graphene sets hearth electrode less than the border of top electrode in n-type silicon matrix lower surface on each silicon window, forms 2
× 2 array devices；
Diagonal two unit uses closed vacuum encapsulating structure in 2 × 2 above-mentioned array devices, it is to avoid
Air and illumination effect device, this part use open encapsulating structure, make as temperature measuring unit, another two diagonal units
It is humidity measurement unit.Described current detection module detects the current signal of aforementioned four unit respectively.
The resistivity of described n-type silicon matrix is 1 ~ 10 Ω cm, and thickness is 300 ~ 500 μm.
Described Graphene is single-layer graphene or redox graphene, and described redox graphene thickness is 1-
50nm。
The beneficial effects of the invention are as follows：Study on Intelligent Sensors of Temperature of the invention is based on graphene/silicon carbide Schottky junction structure, should
Graphene/silicon carbide Schottky junction has notable difference with conventional metals/semiconductor Schottky, except with how sub- transmission speed
Hurry up, be quick on the draw it is outer due also to the high transparency of Graphene, high connductivity, high heat conduction, high mechanical properties and be applied to unconventional condition
Under various applications.Temperature Humidity Sensor of the invention can simultaneously obtain temperature and relatively wet using unique array architecture
Degree, and export.Smart mobile phone is can operate with, intelligence is wearable, in the middle of the sensor needed for the equipment such as smart home.The array
Structure improves sensitivity and repeatability, the fast and convenient measuring environment temperature of energy and humidity, or even the humiture that can detect human body
And it is used for intelligent medical diagnosis, the field such as healthy small assistant.
Brief description of the drawings
Fig. 1 is the structural representation of graphene/silicon array intelligent Temperature Humidity Sensor of the present invention；
Fig. 2 is the structural representation of array Temperature Humidity Sensor module in the present invention；
Fig. 3 is the schematic cross-section of array Temperature Humidity Sensor module；
In figure, power module（1）, input module（2）, microprocessor module（3）, current detection module（4）, array temperature
Moisture sensor module（5）, A/D modular converters（6）, output module（7）；N-type silicon matrix（51）, silica separation layer
（52）, silicon window（53）, Graphene（54）, top electrode（55）And hearth electrode（56）.
Specific embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
Referring to Figures 1 and 2, graphene/silicon array intelligent Temperature Humidity Sensor of the present invention, including power module 1, array
Formula Temperature Humidity Sensor module 5, current detection module 4, A/D modular converters 6, microprocessor module 3, input module 2 and output
Module 7；
Input module 2 is used for signal input and is controlled with providing signal to microprocessor module 3, and current detection module 4 is detected
Electric current in array Temperature Humidity Sensor module 5, and by A/D modular converters 6 by signal transmission to microprocessor module 3,
Microprocessor module 3 gives each module for power supply by the output temperature of output module 7 and humidity, power module 1.
Described input module 2 can be button, touch-screen, bluetooth or network communication interface.
Described output module 7 can be LCDs, touch-screen, bluetooth or network communication interface.
As shown in Figure 2,3, described array Temperature Humidity Sensor module 5 includes n-type silicon matrix 51 and is covered in n-type silicon
The silica separation layer 52 of body upper surface, is provided with to array 2 × 2 silicon windows 53 on silica separation layer 52,
A top electrode 55 is covered in the upper surface of the silica separation layer of each silicon thereabout, in each silicon window and respective top
Electrode top is coated with Graphene 54, and the border of Graphene is less than the border of top electrode on each silicon window, in n-type silicon matrix
Lower surface sets hearth electrode 56, forms 2 × 2 array devices；The resistivity of described n-type silicon matrix is 1 ~ 10 Ω cm, thick
Spend is 300 ~ 500 μm.Described Graphene is single-layer graphene or redox graphene, described redox graphene
Thickness is 1-50nm.
Diagonal two unit uses closed vacuum encapsulating structure in 2 × 2 above-mentioned array devices, as
Temperature measuring unit, another two diagonal units use open encapsulating structure, used as humidity measurement unit；Described current detecting
Module 4 detects the current signal of aforementioned four unit respectively.
The test signal elder generation control electric current detection module of microprocessor module is tested in 2 × 2 array devices and is located at diagonally
Electric current in two unit group A of position, the current average for taking A can be exchanged into temperature value, then 2 × 2 gusts of control test
Another electric current being pointed in two unit Bs of diagonal position in column device, humiture electric current is considered by the temperature value in A
In equation, wherein, humiture current equation：
InaIt is temperature coefficient,TRepresent absolute temperature,bIt is humidity coefficient,RHIt is relative humidity, ln is natural logrithm
Function,IIt is current value in B.In equationa, bValue can be obtained by calibrating fitting.Rh value can be calculated.
The power module 1 of above-mentioned graphene/silicon array intelligent Temperature Humidity Sensor provides 5V voltages and supplies all moulds
Block power supply, array Temperature Humidity Sensor works in -5V, and input module is input into control signal to microprocessor module, opens, closes
Close, measurement, the whole intelligent Sensorsystem of zero setting, the electric current of current detection module hot-wire array formula Temperature Humidity Sensor, and lead to
A/D modular converters signal transmission is crossed to microprocessor module, finally temperature and humidity is shown in output module.
The method for preparing the core sensor module of above-mentioned graphene/silicon array intelligent Temperature Humidity Sensor, including
Following steps：
（1）4 inches of low-mix N-shaped lists of commercial criterion of purchase throw oxidized silicon chip（300 nm SiO2, resistivity is about 1 ~ 10
Ω cm, the thickness of silicon part is ~ 500 μm）, by acetone soln, isopropanol ultrasound 3-5 minutes respectively, after use deionized water
Ultrasonic 5min is simultaneously blown clean with High Purity Nitrogen, and photoetching process is then passed through on silicon chip（Photoetching）Define electrode pattern,
Then electron beam evaporation technique, growth thickness is used to be about the chromium adhesion layer of 5 nm, reusable heat evaporation technique grows the gold of 60 nm
Electrode（Top electrode）, the width of the gold electrode is 10 ~ 50 μm, is then peeled off and cleaning；
（3）By photoetching process（Secondary photoetching）Silicon pattern of windows is defined, and with standard buffers oxide etch agent BOE solution
(NH4F：HF = 6：1) silica for, being removed by wet etching（Etch period 4 minutes）, silicon face is exposed, the silicon window
Mouth is the circular hole of 100 ~ 500 μm of the length of side；
（4）On transfer Graphene to silicon window and electrode.Transfer method：There is the surface of single-layer graphene equal length on Copper Foil
One layer of photoresist of even spin coating（PR-26）And polymethyl methacrylate（PMMA）Film（Thickness is about 1 μm）, it is then placed in etching
Solution（By CuSO4, HCl and water composition, CuSO4：HCl：H2O=10g: 50ml: 50ml）In 4 hours erosion removal Copper Foils, stay
Under by PMMA/PR support single-layer graphene；The single-layer graphene that PMMA/PR is supported is cleaned with deionized water（Floating
Going 5 minutes in particle water, and change deionized water twice）Silica separation layer, top electrode, silicon window are arrived in transfer tiling afterwards
Madial wall, top electrode upper surface；PMMA and photoresist are removed with acetone and isopropanol after waiting 2 ~ 4 hours, 5 points are respectively washed
Clock, and purged with High Purity Nitrogen clean；
（6）By photoetching process（Third photo etching）The region area of Graphene is defined, its photoresist is covered whole metal
Electrode zone, by oxygen plasma reactive ion etching technology（Oxygen plasma ICP-RIE）, when its power and etching
Between be respectively 75 W, 3 min, etch away the unnecessary Graphene outside photoresist, it is clear with acetone and isopropanol after the completion of etching
Wash and remove the photoresist of remnants；
（8）Gallium indium eutectic alloy is coated in n-type silicon base bottom, and with copper-foil conducting electricity adhesive tape bonding gold thread to gallium-indium alloy
On, draw gold thread and prepare hearth electrode；Gold thread is drawn by Wire Bonding Technology on the gold electrode of upper surface and completes Top electrode
Prepare.
Power module 1 in graphene/silicon array intelligent Temperature Humidity Sensor, input module 2, microprocessor module 3,
Current detection module 4, A/D modular converters 6, the ready-made module that output module 7 can be produced using other manufacturers.
Claims (5)
1. a kind of graphene/silicon array intelligent Temperature Humidity Sensor, it is characterised in that including power module（1）, array temperature
Moisture sensor module（5）, current detection module（4）, A/D modular converters（6）, microprocessor module（3）, input module（2）
And output module（7）；
Input module（2）Controlled with providing signal to microprocessor module (3) for signal input, current detection module（4）Inspection
Survey array Temperature Humidity Sensor module（5）In electric current, and by A/D modular converters（6）By signal transmission to microprocessor
Module（3）, microprocessor module（3）By output module（7）Output temperature and humidity, power module（1）To each module for power supply；
Described array Temperature Humidity Sensor module（5）Including n-type silicon matrix（51）Be covered in n-type silicon body upper surface
Silica separation layer（52）, in silica separation layer（52）Upper array it is provided with 2 × 2 silicon windows（53）, at each
The upper surface of the silica separation layer of silicon thereabout covers a top electrode（55）, in each silicon window and corresponding top electrode
Upper surface is coated with Graphene（54）, the border of Graphene is less than the border of top electrode on each silicon window, under n-type silicon matrix
Surface sets hearth electrode（56）, form 2 × 2 array devices；
Diagonal two unit uses closed vacuum encapsulating structure in 2 × 2 above-mentioned array devices, used as thermometric
Unit, another two diagonal units use open encapsulating structure, used as humidity measurement unit；Described current detection module
（4）The current signal of aforementioned four unit is detected respectively.
2. graphene/silicon array intelligent Temperature Humidity Sensor according to claim 1, it is characterised in that described is defeated
Enter module（2）It is button, touch-screen, bluetooth or network communication interface.
3. graphene/silicon array intelligent Temperature Humidity Sensor according to claim 1, it is characterised in that described is defeated
Go out module（7）It is LCDs, touch-screen, bluetooth or network communication interface.
4. graphene/silicon array intelligent Temperature Humidity Sensor according to claim 1, it is characterised in that described n
The resistivity of type silicon substrate is 1 ~ 10 Ω cm, and thickness is 300 ~ 500 μm.
5. graphene/silicon array intelligent Temperature Humidity Sensor according to claim 1, it is characterised in that described stone
Black alkene is single-layer graphene or redox graphene, and described redox graphene thickness is 1-50nm.
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| JP2005249722A (en) * | 2004-03-08 | 2005-09-15 | Denso Corp | Semiconductor type gas sensor |
| CN201795814U (en) * | 2010-08-25 | 2011-04-13 | 南京信息工程大学 | Integrated temperature and humidity monitoring device |
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