CN104649217B - A kind of single-chip processing method of MEMS sensor - Google Patents
A kind of single-chip processing method of MEMS sensor Download PDFInfo
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- CN104649217B CN104649217B CN201410815965.6A CN201410815965A CN104649217B CN 104649217 B CN104649217 B CN 104649217B CN 201410815965 A CN201410815965 A CN 201410815965A CN 104649217 B CN104649217 B CN 104649217B
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Abstract
A single-chip processing method for MEMS sensor, first processes cavity, the bonding region needed for the second processing circuit module and the second sensing arrangement module at the back side of the first substrate, makes the first sensing arrangement module, metal pad and through hole in front; Then the second processing circuit module, the second sensing arrangement module, metal pad and bonding region, overleaf process chamber is made in the front of the second substrate disk; Finally the first substrate being integrated with the first sensing arrangement module is carried out silicon-metal-silicon bonding with the second substrate being integrated with the second sensing arrangement module and the second processing circuit module in vacuum environment and form bonding pad, carry out scribing according to dicing lane, form multiple upper micro-system single-chips.The inventive method have employed two substrate mode, and almost do not limit kind of sensor and circuit kind, integrated level is high, and processing compatibility is strong, is suitable for very much Micro-sensor system Single-Chip Integration field.
Description
Technical field
The present invention relates to a kind of single-chip processing method of sensor single-chip processing method, particularly a kind of MEMS sensor.
Background technology
Micro-system integrated technology has epoch-making meaning.It is conventional with special function that its utilizes advanced Micrometer-Nanometer Processing Technology microelectronics, micromechanics to be integrated, can good quality and high output low consumption, improves its reliability and intelligent functions widely.Micro-system has huge market, the application of the large face width of the amount of having, and system microminiaturization is a development trend of modern science and technology, may cause the new round industrial revolution.MEMS is the abbreviation of MEMS, and adopt MEMS technology that multiple sensors and associated processing circuit are carried out Single-Chip Integration, realizing micro-system on a sheet, is the important development direction in following micro-system field.
At present, realize the system module one or more MEMS sensing arrangement and treatment circuit being carried out Single-Chip Integration abroad, this micro-system integration mode adopts the production method of single substrate, technique is very complicated, require very high to capacity of equipment, and this integration mode to be only limitted between a few species sensor integrated, as gyro and accelerometer, pressure sensor and thermometer or hygrometer etc., integrated level is low, does not have general application.The sheet of many sensing arrangements of China integratedly continues to use external technology pattern, adopts single substrate to make, integrated on the sheet only achieving multiple sensing arrangement at present, do not comprise treatment circuit, and yield rate is low.
Summary of the invention
The technical problem that the present invention solves is: overcome the deficiencies in the prior art, adopt the mode of two substrate superposition and three-dimensional through hole and utilize MEMS technology, provide a kind of single-chip processing method of MEMS sensor, can integrated multiple sensors and actuator, level of integrated system is high and processing compatibility is strong, batch production can be realized, there is stronger practicality.
Technical solution of the present invention is: a kind of single-chip processing method of MEMS sensor, comprises the steps:
(1) cavity body structure needed for micro-nano technology processes second processing circuit module and the cavity body structure needed for the second sensing arrangement module is used at the back side of the first substrate, then make metallic film at the back side of the first substrate and form the first bonding region, wherein, the length of the cavity body structure needed for the second processing circuit module and the length of wide ratio second processing circuit module and roomy, the length of the cavity body structure needed for the second sensing arrangement module and the length of wide ratio second sensing arrangement module and roomy;
(2) use micro-nano technology technique to make the first sensing arrangement module and the first metal pad in the front of the first substrate, the cavity body structure needed for the second processing circuit module and front corresponding to the cavity body structure needed for the second sensing arrangement module process the first through hole and the second through hole; Described first sensing arrangement module comprises one or any combination in gyro, accelerometer, RFMEMS, resonator, pressure sensor, temperature sensor, humidity sensor, sonic transducer;
(3) semiconductor technology is used to make the second processing circuit module in the front of the second substrate, use micro-nano technology fabrication techniques second sensing arrangement module, microelectric technique is used to make the second metal pad and the second bonding region in the second processing circuit module and the second sensing arrangement module, wherein the position of the second processing circuit module is corresponding with the cavity body structure needed for the first substrate back second processing circuit module, and the position of the second sensing arrangement module is corresponding with the cavity body structure needed for the first substrate back second sensing arrangement module; Described second processing circuit module is microelectronic circuit, comprises integrated circuit or discrete circuit; Described second sensing arrangement module comprises one or any combination in gyro, accelerometer, RFMEMS, resonator, pressure sensor, temperature sensor, humidity sensor, sonic transducer;
(4) micro-nano technology technology process chamber is used at the back side of the second sensing arrangement module;
(5) silicon-metal-silicon bonding is carried out, micro-system single-chip in formation sheet in the back side being integrated with the first substrate of the first sensing arrangement module and the front of the second substrate being integrated with the second sensing arrangement module and the second processing circuit module in vacuum environment.
The material of described first substrate and the second substrate is silicon chip, sapphire sheet or SOI sheet.
The first described metal pad, the second metal pad, the first bonding region and the second bonding region are the multiple layer metal film that the single layer metal firms that formed of a kind of metal or various metals are formed, and wherein metal is aluminium, gold, titanium, tungsten, tin, chromium or nickel.
The present invention's advantage is compared with prior art:
(1) the present invention's mode of adopting bi-layer substrate to superpose, can by multiple sensors and treatment circuit on a single die integrated, thus realize micro-system Single-Chip Integration, change the technology mode adopting single substrate, have applied widely, the feature that integrated level is high;
(2) chip in the present invention can adopt the packaged type in vacuum environment in follow-up encapsulation, can ensure sensor long-term steady operation in airtight vacuum cavity, improve performance and the long-term reliability of micro-system;
(3) the present invention is applicable to comprise the multiple sensing module of RFMEMS, gyro, accelerometer, resonator, pressure sensor, temperature sensor, humidity sensor, sonic transducer etc. and the system integration of various microelectronic circuit, level of integrated system is high, processing compatibility is strong, batch production can be realized, there is stronger practicality.
Accompanying drawing explanation
Fig. 1 is the cell distribution schematic diagram in the present invention on the first substrate;
Fig. 2 is that in the present invention, the first substrate completes the single MEMS structure sectional view after carrying on the back chamber;
Fig. 3 is the individual unit sectional view after the present invention first substrate completes sensing module and through hole making;
Fig. 4 is the individual unit sectional view after the present invention first substrate completes back side bonding region making;
Fig. 5 is the individual unit sectional view that in the present invention, the second substrate completes processing circuit module;
Fig. 6 is the individual unit sectional view that in the present invention, the second substrate completes processing circuit module, sensing module and bonding region;
Fig. 7 be in the present invention the first substrate and the second substrate superposition after individual unit sectional view;
Fig. 8 be in the present invention the first substrate and the second substrate superposition after individual unit top view;
Fig. 9 is that the disk after the present invention first substrate superposes with the second substrate is illustrated.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail, and it is as follows that the single-chip processing method of a kind of MEMS sensor of the present invention specifically comprises step:
One, the cavity body structure needed for the back side formation processing circuit module 201 of the first substrate and sensing arrangement module 202, is designated as 101 and 102 respectively.
Be illustrated in figure 1 the MEMS disk distribution schematic diagram of the first substrate in the present invention, disk comprise N number of unit as seen from the figure.Be illustrated in figure 2 single MEMS structure unit sectional view on MEMS disk that the present invention first substrate completes back side cavity body structure.Adopt micro-nano technology technique to process N number of MEMS cavity 101 and 102 at the back side of the first substrate simultaneously, cavity depth is not limit (the long and wide size depending on processing circuit module and sensing arrangement module, long and wide at least large than modules 50 μm.The position at the back side also depends on do not have particular/special requirement in the position of processing circuit module 201 and sensing arrangement module 202).
For the purpose of simplifying the description with explanation accompanying drawing, the sensing arrangement module in integrated approach detailed description of the invention of the present invention and Fig. 2 ~ Fig. 9 and processing circuit module are only illustrated with a graphics field, and in reality, each module can have multiple absolute construction.
Two, the front of the first substrate is produced the sensing arrangement module 103 that comprises multiple sensitive structure and metal pad 106 (metal pad 106 is for the bonding wire of follow-up encapsulation, for ease of follow-up encapsulation, pad 106 is as far as possible near the edge of graphics field), and form through hole 104 and through hole 105.
Be illustrated in figure 3 the present invention first substrate completes sensing arrangement module 103 and through hole 104 and 105 make after individual unit sectional view, concrete steps are as follows:
A. utilize micro-nano technology technique to produce sensing arrangement module 103 (for ensureing processed finished products rate in the front of the first substrate, sensing arrangement module 103 should away from the edge of graphics field, distance figure edges of regions at least 100 μm), this sensing arrangement module can comprise multiple sensing arrangement;
B. in the position of cavity 101 and 102 correspondence of the first substrate back, produce several cavitys from front, form through hole 104 and 105, the quantity of through hole is relevant to structure with position, the quantity of through hole is not limit, and its manufacture craft can be semiconductor technology, blasting craft or laser technology etc.
Three, bonding region 107 is made at the back side of the first substrate.
If Fig. 4 is the individual unit sectional view that the present invention first substrate completes after the bonding region making of the back side, utilize metallic film deposition technology, produce metallic film at the back side of the first substrate and form bonding region 107, metallic film material can be one or more of aluminium, gold, titanium, tungsten, tin, chromium or nickel etc., and thickness of metal film is not limit.
Four, at the front formation processing circuit module 201 of the second substrate.
Be illustrated in figure 5 individual unit sectional view on MEMS disk that the present invention second substrate completes processing circuit module 201.Adopt semiconductor technology to process processing circuit module 201 (position of processing circuit module 201 should be corresponding for the treatment of the cavity body structure 101 needed for circuit module with the first substrate back) in the front of the second substrate, treatment circuit type can comprise various integrated circuit and discrete circuit (two, triode) etc., and value volume and range of product is not limit.
Five, form the sensing arrangement module 202 comprising multiple sensitive structure in the front of the second substrate, and form metal pad 203, form back of the body chamber at the back side of the second substrate, as a part for transducer sensitive structure.And produce bonding region 205 in the front of the second substrate.
If Fig. 6 is the individual unit sectional view that the present invention produces sensing arrangement module 202 and bonding region 205 in the second substrate completing processing circuit module, concrete steps are as follows:
A. utilize micro-nano technology fabrication techniques to go out sensing arrangement module 202 (position of sensing arrangement module 202 should be corresponding with the cavity body structure 102 that the first substrate back is used for needed for sensing arrangement module) in the front of the second substrate, this sensing arrangement module can comprise multiple sensing arrangement;
B. microelectric technique is utilized to produce metal pad 203 and bonding region 205 in the second substrate face relevant position, metal pad and bonding region can make simultaneously also can separately make, material can be the same or different, the position of metal pad 203 should be corresponding with the through-hole structure 104 and 105 of the first substrate, metal pad should be able to expose from through hole, and bonding region 205 is corresponding with bonding region 107 position of the first substrate.
C. in the position that the second substrate back is corresponding with sensing arrangement module 202, utilize micro-nano technology fabrication techniques to go out cavity 204, as a part of structure of sensing arrangement module, form dicing lane 302 simultaneously.
Six, the first substrate 100 and the second substrate 200 are carried out wafer bonding according to bonding region figure, be finally superimposed, form a complete disk 300.By this superposition, sensing arrangement modules all in two substrates and processing circuit module are integrated in one.
Be the structure chart after the present invention first substrate superposes with the second substrate as shown in Figure 7 and Figure 8.The first substrate being integrated with sensing arrangement module 103 is carried out silicon-metal-silicon bonding with the second substrate being integrated with sensing arrangement module 202 and processing circuit module 201 in vacuum (100mBar to 1E-6mBar) environment, forms disk 300.
Seven, after disk 300 being carried out scribing according to dicing lane 302, form several single-chips 301, each single-chip is exactly micro-system on a sheet.
Wherein, in the inventive method, sensing arrangement module or processing circuit module can be distributed in two substrates, also can be distributed in a substrate; Sensor construction module 103 and 202 comprises one or any combination in the multiple sensors such as gyro, accelerometer, RFMEMS, resonator, pressure sensor, temperature sensor, humidity sensor, sonic transducer, and value volume and range of product is not limit; Processing circuit module 201 is microelectronic circuit, and can comprise various integrated circuit or discrete circuit (two, triode) etc., value volume and range of product is not limit; First substrate is produced through hole 104 and 105, can expose the processing circuit module of the second substrate and the metal pad of sensing arrangement module, wherein the quantity of through hole and shape are not limit, only relevant to the treatment circuit of the second substrate or sensing arrangement; First substrate 100, second substrate 200 can be common silicon chip, and also can be other special materials such as sapphire sheet, SOI sheet, substrate diameter and thickness not be limit; The single layer metal firms that metal pad 106 and 203, bonding region 107 and 205 can adopt same metal to be formed, or the multiple layer metal film that different metal is formed, described metal is aluminium, gold, titanium, tungsten, tin, chromium or nickel, and thickness of metal film is not limit.
The present invention by adopting the frame mode of the superposition of two substrate and three-dimensional through hole, utilize MEMS technology by multiple sensing arrangement and multiple treatment circuit on a single die integrated, realize on micro-system sheet integrated.The method is not only applied widely, integrated kind of sensor is not too much limited, go for multiple sensors and the actuators such as MEMS gyro, accelerometer, pressure sensor, thermometer, hygrometer, microphone, Magnetic Sensor, resonator, can the sensor of integrated more than 3 kinds and actuator, level of integrated system is high, and processing compatibility is strong, batch production can be realized, there is stronger practicality.
The content be not described in detail in description of the present invention belongs to the known technology of those skilled in the art.
Claims (3)
1. a single-chip processing method for MEMS sensor, is characterized in that comprising the steps:
(1) cavity body structure (101) needed for micro-nano technology processes second processing circuit module (201) and the cavity body structure (102) needed for the second sensing arrangement module (202) is used at the back side of the first substrate, then make metallic film at the back side of the first substrate and form the first bonding region (107), wherein, the length of the cavity body structure (101) needed for the second processing circuit module (201) and the length of wide ratio second processing circuit module (201) and roomy, the length of the cavity body structure (102) needed for the second sensing arrangement module (202) and the length of wide ratio second sensing arrangement module (202) and roomy,
(2) use micro-nano technology technique to make the first sensing arrangement module (103) and the first metal pad (106) in the front of the first substrate, the front of the cavity body structure (101) needed for the second processing circuit module (201) and the correspondence of the cavity body structure (102) needed for the second sensing arrangement module (202) processes the first through hole (104) and the second through hole (105); Described first sensing arrangement module (103) comprises one or any combination in gyro, accelerometer, RFMEMS, resonator, pressure sensor, temperature sensor, humidity sensor, sonic transducer;
(3) semiconductor technology is used to make the second processing circuit module (201) in the front of the second substrate, use micro-nano technology fabrication techniques second sensing arrangement module (202), use microelectric technique at upper making second metal pad (203) of the second processing circuit module (201) and the second sensing arrangement module (202) and the second bonding region (205), wherein the position of the second processing circuit module (201) is corresponding with the cavity body structure (101) needed for the first substrate back second processing circuit module (201), the position of the second sensing arrangement module (202) is corresponding with the cavity body structure (102) needed for the first substrate back second sensing arrangement module (202), described second processing circuit module (201) is microelectronic circuit, comprises integrated circuit or discrete circuit, described second sensing arrangement module (202) comprises one or any combination in gyro, accelerometer, RFMEMS, resonator, pressure sensor, temperature sensor, humidity sensor, sonic transducer,
(4) micro-nano technology technology process chamber (204) is used at the back side of the second sensing arrangement module (202);
(5) silicon-metal-silicon bonding is carried out, micro-system single-chip (301) in formation sheet in the back side being integrated with the first substrate of the first sensing arrangement module (103) and the front of the second substrate being integrated with the second sensing arrangement module (202) and the second processing circuit module (201) in vacuum environment.
2. the single-chip processing method of a kind of MEMS sensor according to claim 1, is characterized in that: the material of described first substrate and the second substrate is silicon chip or SOI sheet.
3. the single-chip processing method of a kind of MEMS sensor according to claim 1, it is characterized in that: the single layer metal firms that described the first metal pad (106), the second metal pad (203), the first bonding region (107) and the second bonding region (205) are formed for a kind of metal or the multiple layer metal film that various metals is formed, wherein metal is aluminium, gold, titanium, tungsten, tin, chromium or nickel.
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| CN106185783A (en) * | 2015-05-29 | 2016-12-07 | 意法半导体股份有限公司 | The sensor cluster of encapsulation |
| CN105241455B (en) * | 2015-10-29 | 2017-12-29 | 中北大学 | μ PNT minute yardstick solid stacking methods based on TSV technology |
| CN106768050B (en) * | 2016-12-26 | 2020-02-14 | 上海集成电路研发中心有限公司 | Single-chip high-precision temperature and humidity sensor |
| CN107644522A (en) * | 2017-10-16 | 2018-01-30 | 河南汇纳科技有限公司 | A kind of wireless sensing system of the direct current transportation environmental monitoring based on LoRa |
| CN108749494B (en) * | 2018-05-15 | 2020-07-28 | 华润微电子（重庆）有限公司 | Tire pressure sensor manufacturing method and tire pressure sensor |
| CN109186819B (en) * | 2018-09-10 | 2021-09-28 | 上海平脉科技有限公司 | MEMS pressure sensor module |
| CN109889966B (en) * | 2019-03-07 | 2024-06-14 | 钰太芯微电子科技（上海）有限公司 | Bone conduction sensor based on micro-electromechanical system |
| CN114684773A (en) * | 2022-03-04 | 2022-07-01 | 无锡胜脉电子有限公司 | Composite MEMS sensor and chip-scale packaging method |
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