CN105405965B - A kind of high sensitivity graphene magnetic field sensor and preparation method thereof - Google Patents
A kind of high sensitivity graphene magnetic field sensor and preparation method thereof Download PDFInfo
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- CN105405965B CN105405965B CN201510908225.1A CN201510908225A CN105405965B CN 105405965 B CN105405965 B CN 105405965B CN 201510908225 A CN201510908225 A CN 201510908225A CN 105405965 B CN105405965 B CN 105405965B
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
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Abstract
A kind of highly sensitive graphene magnetic field sensor of present invention offer and preparation method thereof.It is related to technical field of semiconductors, the method shifted using dry method forms the hall device of h BN-graphenes-h BN as the nuclear structure of magnetic field sensor, can pollute and destroy caused by material lattice to avoid wet method shifting process and graphical etching, metal deposition process etc.；Using h BN as substrate and encapsulated layer, be conducive to maintain graphene carrier mobility, and device is protected to avoid the O in absorption air2、H2O and particle, to improve device electric property；In addition it is connected in such a way that one dimensional line contacts between graphene and metal electrode, the contact resistance and power consumption of device will be substantially reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, it is related to a kind of highly sensitive graphene magnetic field sensor and its preparation side
Method.
Background technology
Graphene is by sp2The close cellular knot of two-dimentional regular hexagon primitive unit cell that the single layer of carbon atom of orbital hybridization is constituted
Structure lattice, superior electrons transport property become researcher's research and focus of attention.Manchester, England is big within 2004
Physicist An Deliehaimu and Constantine's Nuo Woxiao loves are learned, successfully isolates graphite from graphite in an experiment
Alkene, and quantum hall effect is observed at normal temperatures.Graphene and unusual quantum hall effect be found to be Geim and
Novoselov wins Nobel Prize in physics in 2010.Low energy in graphene near six angles of two-dimensional hexagonal Brillouin zone
Dispersion relation is linear, leads to zero effective mass of electrons and holes, thus its carrier mobility is high, and transmission speed reaches
To the 1/300 of the light velocity, theoretical mobility can reach 106cm2/ Vs is 100 times of electron mobility in silicon.Graphene can be made
For the core material of semiconductor sensitive device.Hall effect is to be found by E.H. Halls for 1879, outer on conductor plus and electricity
The vertical magnetic field in direction is flowed, the carrier (electronics and hole) in conductor can be made to be made rail by the Lorentz force of different directions
Mark shifts toward assembling on different directions, can be produced between the charge (electronics and hole) that material both sides are built up
The raw electric field perpendicular to current direction finally makes the Lorentz force that carrier is subject to balance each other with electric field repulsion, in both sides
Set up a stable potential difference i.e. Hall voltage.The Hall effect of graphene is applied to Hall element, by measuring Hall
Voltage obtains the size in added magnetic field, therefore highly sensitive graphene magnetic field sensor can be prepared.
The performance of Magnetic Sensor depends primarily on 2 parameters：Sensitivity and its power consumption mainly by the concentration of carrier and are moved
Shifting rate determines.Therefore compared with silicon based sensor, since graphene carrier mobility is higher, sensitivity also will be carried substantially
It is high.It can be seen that maintain graphene in carrier mobility and and reduce device contacts resistance, be obtain High-performance graphene magnetic
The key of field sensor.In addition graphene has good temperature stability, need not be additional when being prepared into graphene sensor
Temperature-compensating, reduce device technology difficulty.
In consideration of it, the present invention will provide a kind of preparation method of highly sensitive graphene magnetic field sensor.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of highly sensitive graphene magnetic fields
Sensor and preparation method thereof has stable high-performance microelectronics device to obtain
In order to achieve the above objects and other related objects, the present invention provides a kind of highly sensitive graphene magnetic field sensor
Preparation method, this method at least include the following steps：
1) the first, second, third substrate and PDMS film are provided；
2) one PPC-h-BN structures are sequentially formed on first substrate；PPC-h-BN structures include being located at the
Poly (propylene carbonate) PPC films on one substrate and the first h-BN films on poly (propylene carbonate) PPC films；
3) the first h-BN structures of PPC-that will be formed on first substrate, which are stripped out, is positioned over the PDMS film
On；Form the first h-BN structures of PDMS-PPC-；
4) graphene film is formed on second substrate；
5) above-mentioned graphene film is adsorbed with PDMS-PPC-h-BN structures, forms the first h- of PDMS-PPC-
BN-graphene-structured；
6) the 2nd h-BN films are formed on the third substrate；
7) the 2nd h-BN covered PDMS-PPC-one h-BN-graphene-structureds on the third substrate is thin
Film forms the-the two h-BN structures of PDMS-PPC-one h-BN-graphenes being located on the third substrate；
8) PDMS is taken off, acetone removes PPC, that is, forms one h-BN-graphene-the being located on the third substrate
Two h-BN structures；
9) the h-BN structures of one h-BN-graphenes-the 2nd on third substrate described in reactive ion etching are used, are formed
Hall structure device exposes the one h-BN-h-BN cross section structures of graphene-the 2nd；Expose linear graphene edge；
10) deposited metal covers the h-BN cross section structures of one h-BN-graphenes-the 2nd of exposing, forms one-dimensional graphite
Alkene is contacted with metal electrode.
Preferably, the specific steps of poly (propylene carbonate) PPC films are formed in the step 2) on first substrate
It is that poly (propylene carbonate) PPC is being coated on first substrate with sol evenning machine, it is straight that 3-5min is then heated at a temperature of 120 degree
To film-forming.
Preferably, first, second, third substrate is SiO2Substrate, SiO2/ Si substrates, MgO, Al2O3, SiC substrate
Or flexible substrate.
Preferably, when forming hall structure in the step 9), the 2nd h-BN films do not etch, partial etching or
All etchings.
Preferably, after forming hall structure in the step 9), the thickness of the first, second h-BN films is 10nm-
50nm,
The present invention also provides a kind of highly sensitive graphene magnetic field sensors prepared using above-mentioned preparation method.
The present invention is using dry method transfer techniques by the graphene of mechanical stripping, h-BN stacks of thin films at sandwich structure device
Part, dry method transfer effectively avoids wet method transfer and device preparation technology is polluted caused by material and lattice damage, due to
H-BN films have the surface of good chemical stability and atomically flating, are the good encapsulation of micro-nano electronic device and substrate
Layer.It is had an advantage that using h-BN-Gr-h-BN device architectures, entire device stack lamination is protected to avoid the H in absorption air2O
And particle causes miserable miscellaneous or intraformational folding that carrier mobility is caused to reduce, in addition the h-BN substrates of smooth no dangling bonds are reduced
Scattering to carrier.The present invention is contacted using forming one-dimensional graphene-metal electrode between metal and graphene, on the one hand
Graphene metal contact area is reduced, device contacts resistance is reduced, on the other hand reduces destruction of the device technology to graphene
With the electron mobility for keeping its high, solve the problems, such as that electrical property reduces in microelectronic component preparation process.
Description of the drawings
Fig. 1 to Figure 11 is shown as the preparation flow figure of the embodiment of the present invention one.
Figure 12-13 is shown as the preparation flow figure of the embodiment of the present invention two.
Figure 14 a and 14b are the vertical view of Hall element in the present invention.
Component label instructions
PDMS film 1
First substrate 10
PPC films 11
First h-BN films 12
Second substrate 20
Graphene film 21
Third substrate 30
2nd h-BN films 31
Metal electrode 50,50 '
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.It should be noted that in the absence of conflict, following embodiment and implementation
Feature in example can be combined with each other.
It should be noted that the diagram provided in following embodiment only illustrates the basic structure of the present invention in a schematic way
Think, component count, shape and size when only display is with related component in the present invention rather than according to actual implementation in schema then
Draw, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its assembly layout kenel
It is likely more complexity.
Embodiment one
It please refers to shown in attached drawing 1-11, the present invention provides a kind of highly sensitive graphene magnetic field sensor preparation method, tool
Body embodiment is as follows：
Step 1, the first substrate is provided, forms poly (propylene carbonate) PPC films 11 on the first substrate 10；Existed with sol evenning machine
PPC is coated on first substrate 10 under 1500r/min, heats 3-5min at a temperature of 120 degree until film-forming；Then exist
The first h-BN films 12 are formed on the PPC films.Form the PPC-h-BN structures being located on the first substrate.Please refer to Fig.1 institute
Show.
Step 2, PPC-h-BN structures on first substrate 10 are peeled, is put on PDMS film 1, formed
PDMS-PPC-h-BN structures.It please refers to shown in Fig. 2.The PDMS film 1 and PPC film surfaces it is smooth and with elasticity, due to
PDMS film is thicker, plays a supporting role, can be can be good at by Van der Waals force during subsequent dry method shifts
PPC films are adhered to, while the good translucency of PPC and PDMS also allows for observing pair between sample realization sample under the microscope
It is accurate.When in addition using the film of mechanical stripping in PDMS-PPC structures absorption rigid substrate, it can be good at excluding sample film layer
Between air, by Van der Waals force adsorb it is more secured so that dry method transfer reaches ideal effect.It please refers to shown in Fig. 2.
Step 3, it please refers to shown in Fig. 3, the second substrate 20 is provided, single-layer graphene film is formed on the second substrate 20
21。
Step 4, please refer to shown in Fig. 4, the PDMS-PPC-h-BN structures adsorption step 3 obtained with step 2)) obtain
Graphene film 21 forms PDMS-PPC-h-BN-graphene-structured；As shown in Figure 5.Specifically by PDMS-PPC-h-
BN structures are placed on microscopic slide, and PDMS film is glued well by Van der Waals force will not fall down on the glass sheet, separately
The outer structure for obtaining step 3) is placed on specimen holder, through optical microphotograph sem observation sample, by adjusting microscope either
The shift unit control h-BN films of sample base are moved with graphene on the directions X/Y so that and h-BN films are aligned with graphene,
Shift unit Z-direction is then adjusted again, until h-BN is contacted with graphene, forms glass slide-PDMS-PPC-h-BN-
Graphene-SiO2Next PDMS film and glass slide are slowly lifted up by structure, graphene is just adsorbed on h-BN,
Form PDMS-PPC-h-BN-graphene-structured.
Step 5, it please refers to shown in Fig. 6, forms the 2nd h-BN films 31 on third substrate 30；
Step 6, it please refers to shown in Fig. 7, Fig. 8, the PDMS-PPC-h-BN obtained with step 4)-graphene-structured covers
The 2nd h-BN films 31 on third substrate 30 form the PDMS-PPC-h-BN-graphene-h- being located on third substrate
BN membrane structures.
Step 7, it please refers to shown in attached drawing 9, takes PDMS film 1 off, acetone removes PPC films 11, that is, is formed and be located at third
H-BN-graphene-h-BN device architectures on substrate.
Step 8, it please refers to Fig.1 shown in 0, h-BN-graphene-h-BN structures on third substrate is used into photoetching
Or EBL is patterned, photoresist protects sample surfaces intermediate region, is performed etching using reactive ion, forms Hall knot
Structure, graphene exposes linear barrier at this time, and exposes h-BN-graphene-h-BN cross section structures, last deposited metal decover
Part section forms one-dimensional graphene and is contacted with metal electrode 50；It please refers to Fig.1 shown in 1.
Shown in Figure 14 a and 14b, in the present embodiment, Hall element includes at least four electrodes, the Hall
Structure includes one group of excitation electrode for adding constant-current source or constant pressure source and at least a pair vertical with the excitation electrode
Hall electrode.Preferably, the Hall electrode is two couple vertical with the excitation electrode.
Described first, second and third substrate material be selected from SiO2Or SiO2/Si、MgO、Al2O3, SiC or its
The materials such as its flexible substrate.
The h-BN films of mechanical stripping are formed in the step 1 on PPC films, can be the side for directly using mechanical stripping
Method removes h-BN on PPC, or first shells h-BN in SiO using mechanical stripping method2Or SiO2On the substrates such as/Si, with
PPC adsorbs to form PPC-h-BN structures.
The PPC and PDMS is transparent elastic film, and h-BN, graphene film, energy are adsorbed layer by layer by Van der Waals force
Enough air excluded well between film layer, enhance the absorption contact action between film layer so that total is more secured.
Using the h-BN of mechanical stripping as device substrate and the encapsulated layer of device surface in above-mentioned steps, the change stablized
Characteristic and atomic-level flatness are learned, the surface of no dangling bonds is conducive to maintain the intrinsic electrology characteristic of graphene, protects entire device
Part structure avoids adsorbing contaminant in air and H2O particles.
The entire device fabrication process is all made of dry method transfer, and material surface is avoided to be polluted caused by wet method shifts,
It adsorbs to form super clean interface by Van der Waals force between graphene and h-BN films, reduces defect and charge-trapping.
Embodiment two
The step of the present embodiment is similar with above-described embodiment preparation process and process, and difference place is to form hall structure
When, the 2nd h-BN films do not etch, partial etching or whole etch.Shown in Figure 12 and 13.
The present invention is directed to some critical issues based on graphene device structure and fabricating technology, it is proposed that provides one
Kind is with the technical field of graphene high sensitivity magnetic field sensor.The method shifted by dry method forms metal-h-BN-stone
The device of black alkene-h-BN hall structures.The pollution and impurity that wet method transition zone comes are avoided, by passing through model moral between film layer
Magnificent power is adsorbed to form super clean interface, reduces defect and charge-trapping avoids the decline of carrier mobility.Reduce light
The patterning process such as quarter, etching can be good at protecting device and avoid material using h-BN as device substrate and encapsulated layer
Middle carrier is reduced device performance by the scattering of charge impurity.In addition the one-dimensional contact energy between metal and Graphene electrodes
It is enough effectively to reduce device resistance, be conducive to improve the sensitivity of magnetic field sensor and reduce power consumption.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (8)
1. a kind of preparation method of high sensitivity graphene magnetic field sensor, which is characterized in that this method includes at least following step
Suddenly：
1) the first, second, third substrate and PDMS film are provided；
2) one PPC-h-BN structures are sequentially formed on first substrate；PPC-h-BN structures include being located at the first lining
Poly (propylene carbonate) PPC films on bottom and the first h-BN films on poly (propylene carbonate) PPC films；
3) the first h-BN structures of PPC-that will be formed on first substrate, which are stripped out, to be positioned on the PDMS film；
Form the first h-BN structures of PDMS-PPC-；
4) graphene film is formed on second substrate；
5) above-mentioned graphene film is adsorbed with PDMS-PPC-h-BN structures, forms PDMS-PPC-one h-BN-stones
Black alkene structure；Specifically, PDMS-PPC-h-BN structures are placed on microscopic slide, the structure that step 3) obtains is put
On specimen holder, through optical microphotograph sem observation sample, the shift unit by adjusting microscope either sample base controls h-
BN films are moved with graphene on the directions X/Y so that h-BN films are aligned with graphene film, then adjust shift unit Z again
Direction forms glass slide-PDMS-PPC-h-BN-graphene-SiO until h-BN is contacted with graphene2Structure,
Next slowly PDMS film and glass slide are lifted up, graphene is just adsorbed on h-BN, forms PDMS-PPC-h-
BN-graphene-structured；
6) the 2nd h-BN films are formed on the third substrate；
7) PDMS-PPC-one h-BN-graphene-structureds are covered into the 2nd h-BN films on the third substrate,
Form the-the two h-BN structures of PDMS-PPC-one h-BN-graphenes being located on the third substrate；
8) PDMS is taken off, acetone removes PPC, that is, forms the h- of one h-BN-graphenes-the 2nd being located on the third substrate
BN structures；
9) the h-BN structures of one h-BN-graphenes-the 2nd on third substrate described in reactive ion etching are used, Hall is formed
Structure exposes the one h-BN-h-BN cross section structures of graphene-the 2nd；Expose linear graphene edge；
10) deposited metal covers the h-BN cross section structures of one h-BN-graphenes-the 2nd of exposing, formed one-dimensional graphene with
Metal electrode contacts.
2. the preparation method of high sensitivity graphene magnetic field sensor according to claim 1, which is characterized in that the step
It is rapid 2) in the comprising the concrete steps that with sol evenning machine by polymerized thylene carbonate of poly (propylene carbonate) PPC films is formed on first substrate
Propyl ester PPC is coated on first substrate, then heats 3-5min at a temperature of 120 degree until film-forming.
3. the preparation method of highly sensitive graphene magnetic field sensor according to claim 1, which is characterized in that described the
One, second, third substrate is SiO2Substrate, SiO2/ Si substrates, MgO, Al2O3, SiC substrate or flexible substrate.
4. the preparation method of high sensitivity graphene magnetic field sensor according to claim 1, which is characterized in that the step
When rapid 9) middle formation hall structure, the 2nd h-BN films do not etch, partial etching or whole etch.
5. the preparation method of high sensitivity graphene magnetic field sensor according to claim 1, which is characterized in that the step
After rapid 9) middle formation hall structure, the thickness of the first, second h-BN films is 10nm-50nm.
6. the preparation method of high sensitivity graphene magnetic field sensor according to claim 1, which is characterized in that it is described suddenly
Your structure includes one group of excitation electrode and vertical with the excitation electrode at least one for adding constant-current source or constant pressure source
To Hall electrode.
7. the preparation method of high sensitivity graphene magnetic field sensor according to claim 1, which is characterized in that it is described suddenly
Two couple that electrode is and the excitation electrode is vertical.
8. a kind of highly sensitive graphene magnetic field sensor prepared using claim 1 to 7 any one preparation method.
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| CN106058036B (en) * | 2016-06-08 | 2018-09-28 | 中国科学院上海微系统与信息技术研究所 | A kind of quantum interference device structure and preparation method thereof |
| CN106025061B (en) * | 2016-07-14 | 2018-07-31 | 中国科学院上海微系统与信息技术研究所 | A kind of novel quantum Hall device and preparation method thereof |
| CN107024517A (en) * | 2017-03-14 | 2017-08-08 | 上海新克信息技术咨询有限公司 | A kind of preparation method of graphene gas sensor |
| CN109884557B (en) * | 2019-01-15 | 2020-11-03 | 武汉大学 | Magnetic sensor based on graphene dynamic inductance |
| CN110676169B (en) * | 2019-09-05 | 2023-02-28 | 中国电子科技集团公司第十三研究所 | Preparation method of graphene capsule-packaged transistor |
| CN113555497B (en) * | 2021-06-09 | 2023-12-29 | 浙江芯科半导体有限公司 | SiC-based graphene device with high mobility and preparation method thereof |
| GB202115100D0 (en) * | 2021-10-21 | 2021-12-08 | Paragraf Ltd | Magnetoresistive sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185099A (en) * | 2011-04-26 | 2011-09-14 | 北京大学 | Hall element and manufacturing method thereof |
| CN102496668A (en) * | 2011-12-26 | 2012-06-13 | 金虎 | Boron nitride-graphene composite material, preparation method and purpose thereof |
| CN102891251A (en) * | 2012-09-13 | 2013-01-23 | 北京大学 | Encapsulation structure and encapsulation method for graphene hall element |
| CN202996318U (en) * | 2011-12-26 | 2013-06-12 | 金虎 | Boron nitride-graphene composite material structure |
| CN104726845A (en) * | 2015-03-05 | 2015-06-24 | 中国科学院上海微系统与信息技术研究所 | Method for preparing graphene nanoribbon on h-BN |
| CN105070347A (en) * | 2015-08-17 | 2015-11-18 | 中国科学院上海微系统与信息技术研究所 | Device structure with grapheme as contact electrode and manufacturing method thereof |
-
2015
- 2015-12-09 CN CN201510908225.1A patent/CN105405965B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185099A (en) * | 2011-04-26 | 2011-09-14 | 北京大学 | Hall element and manufacturing method thereof |
| CN102496668A (en) * | 2011-12-26 | 2012-06-13 | 金虎 | Boron nitride-graphene composite material, preparation method and purpose thereof |
| CN202996318U (en) * | 2011-12-26 | 2013-06-12 | 金虎 | Boron nitride-graphene composite material structure |
| CN102891251A (en) * | 2012-09-13 | 2013-01-23 | 北京大学 | Encapsulation structure and encapsulation method for graphene hall element |
| CN104726845A (en) * | 2015-03-05 | 2015-06-24 | 中国科学院上海微系统与信息技术研究所 | Method for preparing graphene nanoribbon on h-BN |
| CN105070347A (en) * | 2015-08-17 | 2015-11-18 | 中国科学院上海微系统与信息技术研究所 | Device structure with grapheme as contact electrode and manufacturing method thereof |
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