CN105070347A - Device structure with grapheme as contact electrode and manufacturing method thereof - Google Patents
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- 238000000034 method Methods 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 87
- 229910021389 graphene Inorganic materials 0.000 claims description 87
- 229920000379 polypropylene carbonate Polymers 0.000 claims description 44
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 29
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 29
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 29
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 29
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 229910016001 MoSe Inorganic materials 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910005543 GaSe Inorganic materials 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- -1 germanium alkene Chemical class 0.000 claims 3
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- 241000219289 Silene Species 0.000 claims 2
- 229910052918 calcium silicate Inorganic materials 0.000 claims 2
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Abstract
The invention provides a device structure with grapheme as a contact electrode and a manufacturing method thereof, and relates to the technical field of device structures with grapheme as contact electrodes. A novel device structure of an h-BN-grapheme-superconductive/semi conducting material-h-Bh is formed through a dry transfer method, and pollution and damage of material crystal lattices due to wet transferring method, graphical etching and metallic deposition technology. h-BN services as a substrate and an encapsulated layer, which facilitates grapheme carrier mobility, and protects the device from absorbing O2, H2O and particles in air. The electric performance of the device structure is improved. The grapheme serves as contact electrode, and one-dimensional linear contact between the depositing metal and the cross section of the grapheme is formed. The contact resistance of superconductive/semiconductor devices is substantially reduced.
Description
Technical field
The invention belongs to microelectronic, relate to a kind of device architecture using Graphene as contact electrode and preparation method thereof.
Background technology
Graphene uniquely can in the two-dimensional atomic crystal of stable existence under room temperature environment as what find the earliest, because the electric property of its excellence is in radio-frequency (RF) transistors, logic switch, memory, transducer, the fields such as transparency conductive electrode obtain research and apply widely.
The birth of Graphene opens people to the extensive concern of New Two Dimensional field of electronic materials and exploration, and therefore after Graphene, researcher has found a series of two-dimensional semiconductor/superconductor with individual layer atomic thickness, as black squama, MoS
2, MoSe, MoTe
2, WSe
2, WTe, TiSe
2, PtSe
2, PdSe
2, CdS, CdSe etc.These two dimensional crystals are owing to having the structure of individual layer atomic thickness, and special physicochemical characteristics is as optical, electrical, magnetic, power, thermal property, can be used for preparing flexible electronic and low-power consumption function element, be with a wide range of applications in fields such as the energy, national defence, communication, electronics, artificial intelligence and information technologies.The most important thing is that these emerging two dimensional crystal materials will be broken through the bottleneck of existing microelectronic component manufacturing process and develop into the important materials preparing Novel electronic devices of future generation.Existing device preparation technology such as the techniques such as wet method transfer, photoetching, etching, metal deposition can to causing material surface pollution, fold and lattice damage etc. in addition, and Electrodes also can have a strong impact on device performance too greatly in addition.Therefore device architecture and preparation technology design and metal electrode contact resistance as two the vital factors affecting device performance, the development and apply for two-dimentional new material device plays vital effect.Therefore for these problems, employing h-BN avoids being subject to H in air as device package and substrate layer protection device by the present invention
2o, O
2and the doping interference effect of particulate.Adopt dry method transfer thin, the impact that semiconductor technology of trying one's best causes the performance of material own.In addition because Graphene has higher carrier mobility, utilize Graphene as electrode, form one dimension with metal and contact and will effectively lower device contacts resistance, effectively overcome the shortcoming of the device of two-dimensional semiconductor/superconductor and accelerate its application.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of device architecture technical field using Graphene as contact electrode, for solve in prior art improve that graphene device performance faces a difficult problem.
For achieving the above object and other relevant objects, the invention provides a kind of device using Graphene as contact electrode and preparation method thereof, the method at least comprises the following steps:
1) first, second, third, fourth substrate and PDMS film are provided;
2) on described first substrate, form a h-BN film of poly (propylene carbonate) PPC film and mechanical stripping successively; Form PPC-h-BN structure
3) PPC-h-BN construction machine be formed on described first substrate stripping is positioned on described PDMS film; Form PDMS-PPC-h-BN structure;
4) on described second substrate, graphene film is formed, graphically to form Graphene electrodes;
5) with described PDMS-PPC-h-BN structure adsorption step 4) in Graphene electrodes, formed PDMS-PPC-h-BN-graphene-structured;
6) on described 3rd substrate, form the 2nd h-BN film of mechanical stripping; Described 4th substrate is formed the MoS of mechanical stripping
2film;
7) described MoS is adsorbed by described PDMS-PPC-h-BN-graphene-structured
2film, forms PDMS-PPC-h-BN-Graphene-MoS
2structure;
8) by PDMS-PPC-h-BN-Graphene-MoS
2structure is placed on the 2nd h-BN film of described 3rd substrate, takes PDMS off, and acetone removes PPC, namely forms h-BN-Graphene-MoS
2-h-BN structure;
9) by whole h-BN-Graphene-MoS
2-h-BN structure adopts reactive ion to etch, and the device architecture of formation rule, exposes h-BN-Graphene-MoS
2-h-BN cross section structure;
10) plated metal, covers the h-BN-Graphene-MoS2-h-BN cross section structure exposed, and forms one dimension Graphene and contacts with metal electrode.
The present invention also provides graphene device of another kind of low contact resistance and preparation method thereof, and the method mainly comprises the following steps:
1) first, second, third, fourth substrate and first, second PDMS film are provided;
2) on described first substrate, poly (propylene carbonate) PPC film and a h-BN film is formed successively; Form PPC-h-BN structure;
3) PPC-h-BN construction machine be formed on described first substrate stripping is positioned on a described PDMS film; Form PDMS-PPC-h-BN structure;
4) on described second substrate, MoS is formed
2film;
5) with described PDMS-PPC-h-BN structure adsorption step 4) in MoS
2film; Obtain PDMS-PPC-h-BN-MoS
2structure;
6) on described 3rd substrate, graphene film is formed, graphically to form Graphene electrodes; Described 2nd PDMS film forms poly (propylene carbonate) PPC film, then adsorbs the Graphene electrodes be formed on the 3rd substrate, form PDMS-PPC-graphene-structured;
7) on described 4th substrate, the 2nd h-BN film is formed; Described in inciting somebody to action
PDMS-PPC-graphene-structured is positioned on the h-BN on the 4th substrate, takes PDMS off subsequently, and removes PPC, forms substrate-h-BN film-graphene-structured;
8) step 5 is adopted to obtain PDMS-PPC-h-BN-MoS
2structure covers in described substrate-h-BN film-graphene-structured; After removing PDMS film and PPC film, form substrate-h-BN film-Graphene-MoS
2-h-BN structure;
9) by whole substrate-h-BN film-Graphene-MoS
2-h-BN structure adopts reactive ion to etch, and the device architecture of formation rule, makes total cross section expose wire graphene edge;
10) plated metal, covers the substrate-h-BN film-Graphene-MoS exposed
2-h-BN structural section structure, forms one dimension Graphene and contacts with metal electrode.
The present invention is directed to based on Graphene some key issues in conjunction with New Two Dimensional semiconductor material devices structure and fabricating technology, propose and a kind of device architecture technical field using Graphene as contact electrode is provided.By the method that dry method shifts, form metal-h-BN-Graphene-MoS
2the device of-h-BN structure.Avoiding wet method and shift the pollution and impurity that bring, by forming super clean interface by Van der Waals force absorption between rete, decreasing the decline that defect and charge-trapping avoid carrier mobility.Decrease the patterning process such as photoetching, etching, avoid Direct Metal Deposition at MoS simultaneously
2ring is caused brokenly to it in surface, and Graphene is as electrode by the Fermi level regulating back gate voltage can regulate Graphene in addition, realizes Graphene and MoS
2can band coupling, thus formation Graphene and MoS
2the contactless potential barrier of film near perfect.Adopt h-BN as device substrate and encapsulated layer, can be good at protection device and avoid charge carrier in material be subject to the scattering of electric charge impurity and reduce device performance.In addition the one dimension between metal with Graphene electrodes contacts and effectively can reduce device resistance, solves the difficult problem how reducing device contact resistance in microelectronic component preparation process.
Accompanying drawing explanation
Fig. 1 to Figure 16 is shown as the preparation flow figure of the embodiment of the present invention one.
Figure 17-33 is shown as the preparation flow figure of the embodiment of the present invention two.
Element numbers explanation
PDMS film 1,1 '
First substrate 10,10 '
PPC film 11,11 '
One h-BN film 12,12 '
Second substrate 20,20 '
Graphene film 21,21 '
Graphene electrodes 210,210 '
3rd substrate 30,30 '
MoS
2film 31,31 '
4th substrate 40,40 '
2nd h-BN film 41,41 '
Metal electrode 50,50 '
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.It should be noted that, when not conflicting, the feature in following examples and embodiment can combine mutually.
It should be noted that, the diagram provided in following examples only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment one
Refer to shown in accompanying drawing 1-16, the invention provides a kind of device architecture preparation method using Graphene as contact electrode, embodiment is as follows:
Step 1, the first substrate 10 is formed poly (propylene carbonate) PPC film 11; PPC is coated on this first substrate 10 under 1500r/min with sol evenning machine, at 120 degree of temperature, heats 3-5min until film-forming; Then on this PPC film, form a h-BN film 12 of mechanical stripping.Form the PPC-h-BN structure be positioned on the first substrate.Refer to shown in Fig. 1.
Step 2, peels the PPC-h-BN structure on this first substrate 10, is put on PDMS film 1, forms PDMS-PPC-h-BN structure.This PDMS film 1 and PPC film surface smooth and there is elasticity, because PDMS film is thicker, play a supporting role in the process of follow-up dry method transfer, can can be good at adhering to PPC film by Van der Waals force, the light transmission that PPC and PDMS is good simultaneously is also convenient to examine under a microscope the aligning that sample realizes between sample.When adopting PDMS-PPC structure to adsorb the film of mechanical stripping in rigid substrate in addition, can be good at getting rid of the air between sample rete, adsorbed by Van der Waals force more firm, dry method is shifted and reaches desirable effect.Refer to shown in Fig. 2.
Step 3, refers to shown in Fig. 3, and the second substrate 20 obtains single-layer graphene film 21 by mechanical stripping; Then etched featuresization forms Graphene electrodes 210; Refer to shown in Fig. 4.
Step 4, refers to shown in Fig. 5 and Fig. 6, by step 2) PDMS-PPC-h-BN structure adsorption step 3 of obtaining) Graphene electrodes that obtains, form PDMS-PPC-h-BN-graphene-structured, concrete is placed on microslide by PDMS-PPC-h-BN structure, PDMS film can not fall down on the glass sheet by Van der Waals force is well sticky, in addition by step 3) structure that obtains is placed on specimen holder, through observation by light microscope sample, moved up in X/Y side by the shift unit control h-BN film and Graphene that regulate microscope or sample base, h-BN film is aimed at Graphene, regulate shift unit Z-direction more subsequently, until h-BN contacts with Graphene, define slide-PDMS-PPC-h-BN-Graphene-SiO2 structure, next PDMS film is peeled from slide, at leisure by PDMS-PPC-h-BN-graphene-structured from SiO
2on tear it down.
Step 5, refers to shown in Fig. 7, and the 3rd substrate 30 is formed the film MoS of mechanical stripping
2film 31;
Step 6, refers to shown in Fig. 8, Fig. 9 and Figure 10, by step 4) MoS on PDMS-PPC-h-BN of obtaining-graphene-structured absorption the 3rd substrate 30
2film 31, forms PDMS-PPC-h-BN-Graphene-MoS
2membrane structure.
Step 7, refers to shown in accompanying drawing 11, and the 4th substrate 40 forms the 2nd h-BN film 41; Again by whole PDMS-PPC-h-BN-Graphene-MoS
2membrane structure covers on the 2nd h-BN film 41; Refer to shown in Figure 12 and 13.
Step 8, refers to shown in Figure 14, takes PDMS film 1 off, and acetone removes PPC film 11, namely forms h-BN-Graphene-MoS
2-h-BN device architecture;
Step 9, refers to shown in Figure 15, by whole h-BN-Graphene-MoS
2-h-BN structure adopts photoetching or EBL to carry out graphically, and photoresist protection sample surfaces zone line, adopt reactive ion to etch, the device architecture of formation rule, now Graphene electrodes exposes linear cross section, and exposes h-BN-Graphene-MoS
2-h-BN cross section structure, last plated metal covering device cross section forms one dimension Graphene and contacts with metal electrode 50; Refer to shown in Figure 16.
The material of described substrate first to fourth substrate is selected from SiO
2or SiO
2/ Si, MgO, Al
2o
3the materials such as flexible substrate.
On PPC film, form the h-BN film of mechanical stripping in described step 1, can be that h-BN peels off on PPC by the method for direct mechanical stripping, or first be adopted by h-BN mechanical stripping method to shell at SiO2 or SiO
2on/Si, forming PPC-h-BN structure with PPC absorption.
Described PPC and PDMS is transparent elastic film, relies on Van der Waals force to adsorb h-BN layer by layer, Graphene, MoS
2film, can be good at getting rid of the air between rete, strengthens the absorption contact action between rete, make total more firm.
Graphene in described step 3 is used as electrode, and Graphene has fabulous chemical inertness and stability, easily can not to extend influence MoS as metal
2performance, avoid photoetching and metal deposition process to MoS
2connect the destruction in district, by the Fermi level regulating back gate voltage can regulate Graphene, realize Graphene and MoS
2can band coupling, thus formation Graphene and MoS
2the contactless potential barrier of film near perfect.
Described step 1) and step 7) in adopt respectively the h-BN of mechanical stripping as device substrate and device surface encapsulated layer can, its stable chemical characteristic and atomic-level flatness, the surface without dangling bonds is conducive to maintaining Graphene and MoS
2intrinsic electrology characteristic, protects whole device architecture to avoid adsorbing contaminant and H in atmosphere
2o particle.
Described whole device fabrication process all adopts dry method to shift, and avoids material surface to shift the pollution caused, Graphene and MoS because of wet method
2between by Van der Waals force absorption formed super clean interface, decrease defect and charge-trapping.
In the present invention, metal linearly contacts with the one dimension Graphene in device cross section, greatly reduces Graphene-Metal Contact resistance.Described Graphene electrodes is individual layer or several atomic layer, and the present invention is preferably individual layer.Described MoS
2the material of film is selected from WS
2, WTe
2, MoSe, MoTe
2, WSe
2, WTe, TiSe
2, PtSe
2, PdSe
2, CdS, CdSe, BP, SnSe, PtS
2, PbI
2, GaSe, InSe, ReS
2, ReSe
2deng.
Embodiment two
The present invention also provides the another kind of device architecture preparation method using Graphene as contact electrode, and it at least comprises step:
A) refer to shown in Figure 17, at the first substrate 10 ' upper formation poly (propylene carbonate) PPC film 11 '; PPC is coated on the first substrate 10 ' under 1500r/min with sol evenning machine, at 120 degree of temperature, heats 3-5min until film-forming; Then at the upper h-BN film 12 ' forming mechanical stripping of PPC film 11 ';
B) PPC-h-BN on the first substrate 10 ' is peeled, be put into have support and adhesive attraction PDMS elastic film 1 ' above, refer to shown in accompanying drawing 18.
C) on the second substrate 30 ', MoS is formed
2film 31 '; Refer to shown in Figure 19.
D) with described PDMS-PPC-h-BN structure adsorption step c) in MoS
2film; Obtain PDMS-PPC-h-BN-MoS
2structure; Refer to shown in Figure 20 and Figure 21.
E) refer to shown in Figure 22 and 23, at described 3rd substrate 20 ' upper formation graphene film 21 ', graphically to form Graphene electrodes 210 '; At the 2nd PDMS film 1 ' upper formation poly (propylene carbonate) PPC film 11 ', then adsorb the Graphene electrodes 210 ' be formed on the 3rd substrate 20 ', form PDMS-PPC-graphene-structured; Refer to shown in accompanying drawing 24 and 25.
F) at upper formation the 2nd h-BN film 41 ' of the 4th substrate 40 '; Adopt the 2nd h-BN film 41 ' on described PDMS-PPC-above-mentioned 4th substrate of graphene-structured absorption; Remove PDMS and PPC and form substrate-h-BN film-graphene-structured; Refer to shown in accompanying drawing 26 to 28.
G) refer to shown in accompanying drawing 29 and 30, adopt step 5 to obtain PDMS-PPC-h-BN-MoS
2structure covers in described substrate-h-BN film-graphene-structured; After removing PDMS film and PPC film, form substrate-h-BN film-Graphene-MoS
2-h-BN structure; Refer to shown in Figure 31.
H) refer to shown in Figure 32, by whole substrate-h-BN film-Graphene-MoS
2-h-BN structure adopts reactive ion to etch, and the device architecture of formation rule, makes total cross section expose wire graphene edge;
I) refer to shown in Figure 33, plated metal, cover the substrate-h-BN film-Graphene-MoS exposed
2-h-BN structural section structure, forms one dimension Graphene and contacts with metal electrode 50 '.
The present invention is directed to based on Graphene some key issues in conjunction with New Two Dimensional semiconductor/superconductor device architecture and fabricating technology, propose and a kind of device architecture technical field using Graphene as contact electrode is provided.By the method that dry method shifts, form metal-h-BN-Graphene-MoS
2the device of-h-BN structure.Avoiding wet method and shift the pollution and impurity that bring, by forming super clean interface by Van der Waals force absorption between rete, decreasing the decline that defect and charge-trapping avoid carrier mobility.Decrease the patterning process such as photoetching, etching, avoid Direct Metal Deposition simultaneously and cause brokenly ring on MoS2 surface to it, Graphene is as electrode by the Fermi level regulating back gate voltage can regulate Graphene in addition, realizes Graphene and MoS
2can band coupling, thus formation Graphene and MoS
2the contactless potential barrier of film near perfect.Adopt h-BN as device substrate and encapsulated layer, can be good at protection device and avoid charge carrier in material be subject to the scattering of electric charge impurity and reduce device performance.In addition the one dimension between metal with Graphene electrodes contacts and effectively can reduce device resistance, solves the difficult problem how reducing device contact resistance in microelectronic component preparation process.
In sum, the invention provides a kind of device architecture technical field method using Graphene as contact electrode.Adopt dry method transfer techniques that the semi-conducting material of mechanical stripping, Graphene, h-BN stacks of thin films are become sandwich structure device, dry method transfer effectively avoids the pollution and lattice damage that wet method transfer and device preparation technology cause material, because h-BN film has good chemical stability and the surface of atomically flating, be encapsulation and substrate layer that micro-nano electronic device is good.Adopt h-BN-MoS
2the benefit of-Gr-h-BN device architecture is, protects the H that whole device stack lamination is avoided in absorbed air
2o and particulate cause miserable assorted or intraformational folding to cause loose contact, to it also avoid in subsequent electrode preparation process metal deposition process in addition to MoS
2film damages the electric property caused to be reduced, and the smooth h-BN substrate without dangling bonds reduces the scattering to charge carrier.The Graphene that the present invention adopts conductivity superior is as electrode, form the Graphene-metal electrode contact of one dimension, reduce Graphene metal contact area on the one hand, reduce device contact resistance, minimizing device technology is to the destruction of Graphene with the electron mobility keeping it high on the other hand, solves the difficult problem that in microelectronic component preparation process, device contacts resistance is larger.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. the device architecture preparation method using Graphene as contact electrode, it is characterized in that, the method at least comprises the following steps:
1) first, second, third, fourth substrate and PDMS film are provided;
2) on described first substrate, poly (propylene carbonate) PPC film and a h-BN film is formed successively; Form PPC-h-BN structure;
3) PPC-h-BN structure be formed on described first substrate stripping is positioned on described PDMS film; Form PDMS-PPC-h-BN structure;
4) on described second substrate, graphene film is formed, graphically to form Graphene electrodes;
5) with described PDMS-PPC-h-BN structure adsorption step 4) in Graphene electrodes, formed PDMS-PPC-h-BN-graphene-structured;
6) on described 3rd substrate, the 2nd h-BN film is formed; Described 4th substrate forms MoS
2film;
7) described MoS is adsorbed by described PDMS-PPC-h-BN-graphene-structured
2film, forms PDMS-PPC-h-BN-Graphene-MoS
2structure;
8) by PDMS-PPC-h-BN-Graphene-MoS
2structure is placed on the 2nd h-BN film of described 3rd substrate, takes PDMS off, and acetone removes PPC, namely forms h-BN-Graphene-MoS
2-h-BN structure;
9) by whole h-BN-Graphene-MoS
2-h-BN structure adopts reactive ion to etch, and the device architecture of formation rule, makes total cross section expose wire graphene edge; And expose h-BN-Graphene-MoS
2-h-BN cross section structure;
10) plated metal, covers the h-BN-Graphene-MoS exposed
2-h-BN cross section structure, forms one dimension Graphene and contacts with metal electrode.
2. the device architecture preparation method using Graphene as contact electrode according to claim 1, it is characterized in that, described step 2) on described first substrate, form poly (propylene carbonate) PPC film concrete steps be poly (propylene carbonate) PPC is coated on described first substrate under 1500r/min rotating speed with sol evenning machine, then at 120 degree of temperature, heat 3-5min until film-forming.
3. the device architecture preparation method using Graphene as contact electrode according to claim 1, is characterized in that, described first, second, third, fourth substrate is SiO
2substrate, SiO
2/ Si substrate, MgO, Al
2o
3substrate or flexible substrate.
4. the device architecture preparation method using Graphene as contact electrode according to claim 1, is characterized in that, described Graphene electrodes is individual layer or several atomic layer, for mechanical stripping obtains.
5. the device architecture preparation method using Graphene as contact electrode according to claim 1, is characterized in that, described MoS
2the material of film is selected from black phosphorus, silene, germanium alkene, WS
2, WTe
2, MoSe, MoTe
2, WSe
2, WTe, TiSe
2, PtSe
2, PdSe
2, CdS, CdSe, BP, SnSe, PtS
2, PbI
2, GaSe, InSe, ReS
2, ReSe
2, it obtains for mechanical stripping, and described h-BN film is that mechanical stripping obtains.
6. the Graphene adopting claim 1 to 5 any one preparation method to prepare is as the device of contact electrode.
7. the device architecture preparation method using Graphene as contact electrode, it is characterized in that, the method at least comprises the following steps:
1) first, second, third, fourth substrate and first, second PDMS film are provided;
2) on described first substrate, poly (propylene carbonate) PPC film and a h-BN film is formed successively; Form PPC-h-BN structure;
3) PPC-h-BN construction machine be formed on described first substrate stripping is positioned on a described PDMS film; Form PDMS-PPC-h-BN structure;
4) on described second substrate, MoS is formed
2film;
5) with described PDMS-PPC-h-BN structure adsorption step 4) in MoS
2film; Obtain PDMS-PPC-h-BN-MoS
2structure;
6) on described 3rd substrate, graphene film is formed, graphically to form Graphene electrodes; Described 2nd PDMS film forms poly (propylene carbonate) PPC film, then adsorbs the Graphene electrodes be formed on the 3rd substrate, form PDMS-PPC-graphene-structured;
7) on described 4th substrate, the 2nd h-BN film is formed; PDMS-PPC-graphene-structured on described 3rd substrate covered on the 2nd h-BN on described 4th substrate, take PDMS film off, acetone removes PPC, forms substrate-h-BN film-graphene-structured;
8) step 5 is adopted to obtain PDMS-PPC-h-BN-MoS
2structure covers in described substrate-h-BN film-graphene-structured; After removing PDMS film and PPC film, form substrate-h-BN film-Graphene-MoS
2-h-BN structure;
9) by whole substrate-h-BN film-Graphene-MoS
2-h-BN structure adopts reactive ion to etch, and the device architecture of formation rule, makes total cross section expose wire graphene edge;
10) plated metal, covers the substrate-h-BN film-Graphene-MoS exposed
2-h-BN structural section structure, forms one dimension Graphene and contacts with metal electrode.
8. the device architecture preparation method using Graphene as contact electrode according to claim 7, is characterized in that, described first, second, third, fourth substrate is SiO
2substrate, SiO
2/ Si substrate, MgO or Al
2o
3substrate.
9. Graphene according to claim 7 is as the device architecture and preparation method thereof of contact electrode, it is characterized in that, described MoS
2the material of film is selected from black phosphorus, silene, germanium alkene, WS
2, WTe
2, MoSe, MoTe
2, WSe
2, WTe, TiSe
2, PtSe
2, PdSe
2, CdS, CdSe, BP, SnSe, PtS
2, PbI
2, GaSe, InSe, ReS
2, ReSe
2.
10. one kind adopts claim 7 to 9 any one preparation method to prepare the device architecture of Graphene as contact electrode.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012161660A1 (en) * | 2011-05-23 | 2012-11-29 | National University Of Singapore | Method of transferring thin films |
| CN103633024A (en) * | 2013-11-11 | 2014-03-12 | 西安电子科技大学 | Method for preparing h-BN medium graphene integrated circuits on large scale |
| CN103928340A (en) * | 2014-04-19 | 2014-07-16 | 复旦大学 | Direct growth method for two-dimensional molybdenum disulfide back gate device |
| US20140231886A1 (en) * | 2013-02-18 | 2014-08-21 | Samsung Electronics Co., Ltd. | Two-dimensional material stacked flexible photosensor |
-
2015
- 2015-08-17 CN CN201510504332.8A patent/CN105070347B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012161660A1 (en) * | 2011-05-23 | 2012-11-29 | National University Of Singapore | Method of transferring thin films |
| US20140231886A1 (en) * | 2013-02-18 | 2014-08-21 | Samsung Electronics Co., Ltd. | Two-dimensional material stacked flexible photosensor |
| CN103633024A (en) * | 2013-11-11 | 2014-03-12 | 西安电子科技大学 | Method for preparing h-BN medium graphene integrated circuits on large scale |
| CN103928340A (en) * | 2014-04-19 | 2014-07-16 | 复旦大学 | Direct growth method for two-dimensional molybdenum disulfide back gate device |
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