CN105070347B - It is a kind of that device architecture of contact electrode and preparation method thereof is used as using graphene - Google Patents
It is a kind of that device architecture of contact electrode and preparation method thereof is used as using graphene Download PDFInfo
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Abstract
The present invention provides a kind of device architecture for being used as using graphene and contacting electrode and preparation method thereof, it is related to the device architecture technical field using graphene as contact electrode, the method formation h BN-graphene-superconduction/semi-conducting material-h BN shifted with dry method new device structure, the pollution and destruction that wet method shifting process and graphical etching, metal deposition process etc. can be avoided to cause material lattice；Using h BN as substrate and encapsulated layer, be conducive to maintaining graphene carrier mobility, and protection device avoids adsorbing the O in air2、H2O and particulate, to improve device electric property；In addition using graphene as contact electrode, deposited metal forms one-dimensional linear contact lay with graphene section, will substantially reduce the contact resistance of superconduction/semiconductor devices.
Description
Technical field
The invention belongs to microelectronic, it is related to a kind of using device architecture of the graphene as contact electrode and its preparation side
Method.
Background technology
Graphene as find earliest uniquely can stable existence under room temperature environment two-dimensional atomic crystal, due to it
Excellent electric property is in RF transistors, logic switch, memory, sensor, and the field such as transparent conductive electrode is obtained
Extensive research and application.
The birth of graphene opens extensive concern and exploration of the people to New Two Dimensional field of electronic materials, therefore after stone
Researcher is found that a series of two-dimensional semiconductor/superconductors with individual layer atomic thickness after black alkene, such as black squama,
MoS2、MoSe、MoTe2、WSe2、WTe、TiSe2、PtSe2、PdSe2, CdS, CdSe etc..These two dimensional crystals are due to individual layer
The structure of atomic thickness, and special physicochemical characteristics such as light, electricity, magnetic, power, thermal property, can be used to prepare flexibility
Electronics and low-power consumption function element, have extensive in fields such as the energy, national defence, communication, electronics, artificial intelligence and information technologies
Application prospect.Above all these emerging two dimensional crystal materials will break through the bottleneck of existing microelectronic component manufacturing process
And develop into the important materials for preparing Novel electronic devices of future generation.Such as wet method transfer of other existing device preparation technology,
The techniques such as photoetching, etching, metal deposit can be to causing material surface pollution, fold and lattice damage etc., and electrode contact is electric in addition
Resistance can also have a strong impact on device performance very much greatly.Therefore device architecture and preparation technology design and metal electrode contact resistance conduct
Two vital factors of influence device performance, development and application for two-dimentional new material device play most important
Effect.Therefore for these problems, the present invention will be encapsulated using h-BN as device and substrate layer protection device avoid by
H in air2O、O2And the doping interference effect of particulate.Using dry method shift film, as far as possible reduce semiconductor technology to material in itself
The influence that performance is caused.There is higher carrier mobility additionally, due to graphene, by the use of graphene as electrode, with metal
Device contacts resistance will effectively be lowered by forming one-dimensional contact, effectively overcome the shortcoming of device of two-dimensional semiconductor/superconductor simultaneously
Accelerate its application.
The content of the invention
The shortcoming of prior art, contact electricity is used as it is an object of the invention to provide one kind using graphene in view of the above
The device architecture technical field of pole, for solving to improve the problem that graphene device performance faces in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of device using graphene as contact electrode
And preparation method thereof, this method at least comprises the following steps：
1) first, second, third, fourth substrate and PDMS film are provided；
2) poly (propylene carbonate) PPC films are sequentially formed on first substrate and the first h-BN of mechanical stripping is thin
Film；Form one PPC-h-BN structures
3) PPC-h-BN construction machines that will be formed on first substrate are peeled off and are positioned on the PDMS film；
Form PDMS-PPC-h-BN structures；
4) graphene film is formed on second substrate, graphically to form Graphene electrodes；
5) with the PDMS-PPC-h-BN structures adsorption step 4) in Graphene electrodes, formed PDMS-PPC-h-
BN-graphene-structured；
6) the 2nd h-BN films of mechanical stripping are formed on the 3rd substrate；Machinery is formed on the 4th substrate
The MoS of stripping2Film；
7) MoS is adsorbed with the PDMS-PPC-h-BN-graphene-structured2Film, forms PDMS-PPC-h-
BN-graphene-MoS2Structure；
8) by PDMS-PPC-h-BN-graphene-MoS2Structure is placed on the 2nd h-BN films of the 3rd substrate
On, take PDMS off, acetone removes PPC, that is, forms h-BN-graphene-MoS2- h-BN structures；
9) by whole h-BN-graphene-MoS2- h-BN structures are performed etching using reactive ion, the device of formation rule
Part structure, exposes h-BN-graphene-MoS2- h-BN cross section structures；
10) deposited metal, covers the h-BN-graphene-MoS2-h-BN cross section structures exposed, forms one-dimensional graphene
Contacted with metal electrode.
The present invention also provides graphene device of another low contact resistance and preparation method thereof, this method mainly include with
Lower step：
1) first, second, third, fourth substrate and first, second PDMS film are provided；
2) poly (propylene carbonate) PPC films and the first h-BN films are sequentially formed on first substrate；Form one
PPC-h-BN structures；
3) PPC-h-BN construction machines that will be formed on first substrate are peeled off and are positioned over first PDMS film
On；Form PDMS-PPC-h-BN structures；
4) MoS is formed on second substrate2Film；
5) with the PDMS-PPC-h-BN structures adsorption step 4) in MoS2Film；Obtain PDMS-PPC-h-
BN—MoS2Structure；
6) graphene film is formed on the 3rd substrate, graphically to form Graphene electrodes；Described second
Poly (propylene carbonate) PPC films are formed on PDMS film, then absorption is formed at the Graphene electrodes on the 3rd substrate, is formed
PDMS-PPC-graphene-structured；
7) the 2nd h-BN films are formed on the 4th substrate；Will be described
PDMS-PPC-graphene-structured is positioned on the h-BN on the 4th substrate, then takes PDMS off, and removes PPC,
Form substrate-h-BN films-graphene-structured；
8) PDMS-PPC-h-BN-MoS is obtained using step 52Structure is covered in the substrate-h-BN films-stone
In black alkene structure；Remove after PDMS film and PPC films, form substrate-h-BN films-graphene-MoS2- h-BN structures；
9) by whole substrate-h-BN films-graphene-MoS2- h-BN structures are performed etching using reactive ion, shape
Into the device architecture of rule, total section is set to expose wire graphene edge；
10) deposited metal, covers the substrate-h-BN films-graphene-MoS exposed2- h-BN structural section structures,
One-dimensional graphene is formed to contact with metal electrode.
The present invention is for one based on graphene combination New Two Dimensional semiconductor material devices structure and fabricating technology
A little key issues, it is proposed that a kind of device architecture technical field using graphene as contact electrode is provided.Shifted by dry method
Method, formed metal-h-BN-graphene-MoS2The device of-h-BN structures.Avoid the pollution that wet method transition zone comes
With impurity, adsorb to form super clean interface by Van der Waals force between film layer, reduce defect and charge-trapping avoids current-carrying
The decline of transport factor.The patterning process such as photoetching, etching are reduced, while avoiding Direct Metal Deposition in MoS2Surface pair
It causes brokenly ring, and graphene can adjust the fermi level of graphene as electrode by adjusting back gate voltage in addition, realize stone
Black alkene and MoS2Can be with matching, thus form graphene and MoS2The contactless potential barrier of film near perfect.Device is used as using h-BN
Part substrate and encapsulated layer, can be good at protection device and avoid the carrier in material from being reduced device by the scattering of electric charge impurity
Part performance.In addition the one-dimensional contact between metal and Graphene electrodes can effectively reduce device resistance, solve microelectronics device
How the problem of device contacts resistance is reduced in part preparation process.
Brief description of the drawings
Fig. 1 to Figure 16 is shown as the preparation flow figure of the embodiment of the present invention one.
Figure 17-33 is shown as the preparation flow figure of the embodiment of the present invention two.
Component label instructions
PDMS film 1,1 '
First substrate 10,10 '
PPC films 11,11 '
First h-BN films 12,12 '
Second substrate 20,30 '
Graphene film 21,21 '
Graphene electrodes 210,210 '
3rd substrate 30,20 '
MoS2Film 31,31 '
4th substrate 40,40 '
2nd h-BN films 41,41 '
Metal electrode 50,50 '
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.It should be noted that, in the case where not conflicting, following examples and implementation
Feature in example can be mutually combined.
It should be noted that the diagram provided in following examples only illustrates the basic structure of the present invention in a schematic way
Think, then in schema only display with relevant component in the present invention rather than according to component count, shape and the size during actual implement
Draw, it is actual when implementing, and kenel, quantity and the ratio of each component can be a kind of random change, and its assembly layout kenel
It is likely more complexity.
Embodiment one
Refer to shown in accompanying drawing 1-16, the present invention provides a kind of device architecture preparation side for being used as using graphene and contacting electrode
Method, embodiment is as follows：
Step 1, poly (propylene carbonate) PPC films 11 are formed on the first substrate 10；Will under 1500r/min with sol evenning machine
PPC is coated on first substrate 10, heats 3-5min at a temperature of 120 degree until film-forming；Then the shape on the PPC films
Into the first h-BN films 12 of mechanical stripping.Form the PPC-h-BN structures being located on the first substrate.Refer to shown in Fig. 1.
Step 2, PPC-h-BN structures on first substrate 10 are peeled, be put on PDMS film 1, formed
PDMS-PPC-h-BN structures.The PDMS film 1 and PPC film surfaces are smooth and flexible, because PDMS film is thicker,
Played a supporting role during follow-up dry method transfer, can be good at adhering to PPC films by Van der Waals force, together
When good PPC and PDMS translucency also allow for observing sample under the microscope and realize alignment between sample.Use in addition
In PDMS-PPC structures absorption rigid substrate during the film of mechanical stripping, it can be good at excluding the air between sample film layer,
Adsorb more firm by Van der Waals force so that dry method transfer reaches preferable effect.Refer to shown in Fig. 2.
Step 3, refer to shown in Fig. 3, acquisition single-layer graphene film 21 is by mechanically pulling off on the second substrate 20；So
Etched featuresization form Graphene electrodes 210 afterwards；Refer to shown in Fig. 4.
Step 4, refer to shown in Fig. 5 and Fig. 6, with step 2) obtain PDMS-PPC-h-BN structures adsorption step 3)
The Graphene electrodes of acquisition, form PDMS-PPC-h-BN-graphene-structured；Specifically by PDMS-PPC-h-BN structures
It is placed on microslide, PDMS film is glued well by Van der Waals force will not fall down on the glass sheet, in addition will step
The rapid structure 3) obtained is placed on specimen holder, through observation by light microscope sample, by adjusting microscope either sample bottom
The shift unit control h-BN films of seat are moved up with graphene in X/Y side so that h-BN films are aligned with graphene, then again
Shift unit Z-direction is adjusted, until h-BN is contacted with graphene, slide-PDMS-PPC-h-BN-graphite is formd
Alkene-SiO2Structure, next peels PDMS film from slide, then at leisure by PDMS-PPC-h-BN-graphite
Alkene structure is from SiO2On tear it down.
Step 5, refer to shown in Fig. 7, the film MoS of mechanical stripping is formed on the 3rd substrate 302Film 31；
Step 6, refer to shown in Fig. 8, Fig. 9 and Figure 10, with step 4) obtain PDMS-PPC-h-BN-graphene knot
Structure adsorbs the MoS on the 3rd substrate 302Film 31, forms PDMS-PPC-h-BN-graphene-MoS2Membrane structure.
Step 7, refer to shown in accompanying drawing 11, the 2nd h-BN films 41 are formed on the 4th substrate 40；Again will be whole
PDMS-PPC-h-BN-graphene-MoS2Membrane structure is covered on the 2nd h-BN films 41；Refer to Figure 12 and 13
It is shown.
Step 8, refer to shown in Figure 14, take PDMS film 1 off, acetone removes PPC films 11, that is, forms h-BN-graphite
Alkene-MoS2- h-BN device architectures；
Step 9, refer to shown in Figure 15, by whole h-BN-graphene-MoS2- h-BN structures using photoetching or
EBL is patterned, photoresist protection sample surfaces intermediate region, is performed etching using reactive ion, the device of formation rule
Structure, now Graphene electrodes expose linear cross section, and expose h-BN-graphene-MoS2- h-BN cross section structures, finally sink
Product metal covering device section forms one-dimensional graphene and contacted with metal electrode 50；Refer to shown in Figure 16.
The material of the substrate of substrate first to fourth is selected from SiO2Or SiO2/Si、MgO、Al2O3The materials such as flexible substrate
Material.
The h-BN films of mechanical stripping are formed in the step 1 on PPC films, can be for directly with the side of mechanical stripping
Method by h-BN peel off on PPC, or first by h-BN using mechanical stripping method shell in SiO2Or SiO2On/Si, inhaled with PPC
Attached formation PPC-h-BN structures.
The PPC and PDMS are transparent elastic film, and h-BN, graphene, MoS are adsorbed layer by layer by Van der Waals force2It is thin
Film, can be good at excluding the absorption contact action between the air between film layer, enhancing film layer so that total is more firm.
Graphene in the step 3 is used as electrode, and graphene has fabulous chemical inertness and stability, will not be as gold
The easy MoS that extends influence of category2Performance, it is to avoid photoetching and metal deposition process are to MoS2The destruction in area is connect, passes through regulation
Back gate voltage can adjust the fermi level of graphene, realize graphene and MoS2Can be with matching, thus form graphene and MoS2
The contactless potential barrier of film near perfect.
The step 1) and step 7) in the h-BN of mechanical stripping is respectively adopted as device substrate and the envelope of device surface
Layer is filled, its stable chemical characteristic and atomic-level flatness, the surface of no dangling bonds are conducive to maintaining graphene and MoS2It is intrinsic
Electrology characteristic, protects whole device architecture to avoid adsorbing contaminant in atmosphere and H2O particles.
The whole device fabrication process is shifted using dry method, it is to avoid pollution of the material surface caused by wet method is shifted,
Graphene and MoS2Between adsorb to form super clean interface by Van der Waals force, reduce defect and charge-trapping.
In the present invention, metal and the one-dimensional graphene linear contact in device section greatly reduce graphene-metal contact
Resistance.The Graphene electrodes are individual layer or several atomic layers, and the present invention is preferably individual layer.The MoS2The material choosing of film
From WS2、WTe2、MoSe、MoTe2、WSe2、WTe、TiSe2、PtSe2、PdSe2、CdS、CdSe、BP、SnSe、PtS2、PbI2、
GaSe、InSe、ReS2、ReSe2Deng.
Embodiment two
The present invention also provides another device architecture preparation method using graphene as contact electrode, and it at least includes step
Suddenly：
A) refer to shown in Figure 17, poly (propylene carbonate) PPC films 11 ' are formed on the first substrate 10 '；Existed with sol evenning machine
PPC is coated on the first substrate 10 ' under 1500r/min, 3-5min is heated at a temperature of 120 degree until film-forming；Then exist
The h-BN films 12 ' of mechanical stripping are formed on PPC films 11 '；
B) PPC-h-BN on the first substrate 10 ' is peeled, is put into the PDMS Thin Elastics with support and adhesive attraction
Film 1 ' above, is referred to shown in accompanying drawing 18.
C) MoS is formed on the second substrate 30 '2Film 31 '；Refer to shown in Figure 19.
D) with the MoS in the PDMS-PPC-h-BN structure adsorption steps c)2Film；Obtain PDMS-PPC-h-
BN—MoS2Structure；Refer to shown in Figure 20 and Figure 21.
E) refer to shown in Figure 22 and 23, graphene film 21 ' is formed on the 3rd substrate 20 ', graphically with shape
Into Graphene electrodes 210 '；Poly (propylene carbonate) PPC films 61 ' are formed on the second PDMS film 6 ', then absorption is formed at
Graphene electrodes 210 ' on 3rd substrate 20 ', form PDMS-PPC-graphene-structured；Refer to shown in accompanying drawing 24 and 25.
F) the 2nd h-BN films 41 ' are formed on the 4th substrate 40 '；Inhaled using the PDMS-PPC-graphene-structured
Enclose the 2nd h-BN films 41 ' stated on the 4th substrate；Remove PDMS and PPC formation substrate-h-BN films-graphene knots
Structure；Refer to shown in accompanying drawing 26 to 28.
G) refer to shown in accompanying drawing 29 and 30, PDMS-PPC-h-BN-MoS is obtained using step d2Structure is covered in institute
State in substrate-h-BN films-graphene-structured；Remove after PDMS film and PPC films, form substrate-h-BN films-stone
Black alkene-MoS2- h-BN structures；Refer to shown in Figure 31.
H) refer to shown in Figure 32, by whole substrate-h-BN films-graphene-MoS2- h-BN structures are using reaction
Ion is performed etching, the device architecture of formation rule, total section is exposed wire graphene edge；
I) refer to shown in Figure 33, deposited metal, cover the substrate-h-BN films-graphene-MoS exposed2—h-
BN structural section structures, form one-dimensional graphene and are contacted with metal electrode 50 '.
The present invention, which is directed to, is based on graphene combination New Two Dimensional semiconductor/superconductor device architecture and fabricating technology
Some key issues, it is proposed that provide it is a kind of using graphene is used as contact electrode device architecture technical field.Pass through dry method
The method of transfer, forms metal-h-BN-graphene-MoS2The device of-h-BN structures.Avoid what wet method transition zone came
Adsorb to form super clean interface by Van der Waals force between pollution and impurity, film layer, reduce defect and charge-trapping is avoided
The decline of carrier mobility.The patterning process such as photoetching, etching are reduced, while avoiding Direct Metal Deposition in MoS2Table
Ring is caused brokenly in face of it, graphene can adjust the fermi level of graphene as electrode by adjusting back gate voltage in addition, it is real
Existing graphene and MoS2Can be with matching, thus form graphene and MoS2The contactless potential barrier of film near perfect.Made using h-BN
For device substrate and encapsulated layer, it can be good at protection device and avoid carrier in material from being dropped by the scattering of electric charge impurity
Low device performance.In addition the one-dimensional contact between metal and Graphene electrodes can effectively reduce device resistance, solve micro- electricity
How the problem of device contacts resistance is reduced in sub- device fabrication process.
In summary, the present invention provides a kind of device architecture technical field method using graphene as contact electrode.Adopt
With dry method transfer techniques by the semi-conducting material of mechanical stripping, graphene, h-BN stacks of thin films into sandwich structure device, dry method
Transfer is effective to avoid pollution and the lattice damage that wet method transfer and device preparation technology are caused to material, due to h-BN films
Surface with good chemical stability and atomically flating, is the good encapsulation of micro-nano electronic device and substrate layer.Using
h-BN—MoS2- Gr-h-BN device architectures are had an advantage that, protect whole device stack lamination to avoid adsorbing the H in air2O and
Particulate causes doping or intraformational folding to cause loose contact, and metal deposit work in subsequent electrode preparation process is it also avoid in addition
Skill is to MoS2Film damages caused electric property reduction, and the smooth h-BN substrates without dangling bonds are reduced to be dissipated to carrier
Penetrate.The present invention, as electrode, forms one-dimensional graphene-metal electrode contact, on the one hand using the superior graphene of electric conductivity
Graphene metal contact area is reduced, device contacts resistance is reduced, destruction of the device technology to graphene is on the other hand reduced
To keep the electron mobility that its is high, the larger problem of device contacts resistance in microelectronic component preparation process is solved.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. it is a kind of using graphene be used as contact electrode device architecture preparation method, it is characterised in that this method at least include with
Lower step：
1) first, second, third, fourth substrate and PDMS film are provided；
2) poly (propylene carbonate) PPC films and the first h-BN films are sequentially formed on first substrate；Form one PPC-h-
BN structures；
3) PPC-h-BN structures that will be formed on first substrate are peeled off and are positioned on the PDMS film；Formed
PDMS-PPC-h-BN structures；
4) graphene film is formed on second substrate, graphically to form Graphene electrodes；
5) with the PDMS-PPC-h-BN structures adsorption step 4) in Graphene electrodes, formed PDMS-PPC-h-BN-
Graphene-structured；
6) MoS is formed on the 3rd substrate2Film；The 2nd h-BN films are formed on the 4th substrate；
7) MoS is adsorbed with the PDMS-PPC-h-BN-graphene-structured2Film, formation PDMS-PPC-h-BN-
Graphene-MoS2Structure；
8) by PDMS-PPC-h-BN-graphene-MoS2Structure is placed on the 2nd h-BN films of the 4th substrate, is taken off
Fall PDMS, acetone removes PPC, that is, forms h-BN-graphene-MoS2- h-BN structures；
9) by whole h-BN-graphene-MoS2- h-BN structures are performed etching using reactive ion, the device junction of formation rule
Structure, makes total section expose wire graphene edge；And expose h-BN-graphene-MoS2- h-BN cross section structures；
10) deposited metal, covers the h-BN-graphene-MoS exposed2- h-BN cross section structures, form one-dimensional graphene and gold
Belong to electrode contact.
2. the device architecture preparation method according to claim 1 using graphene as contact electrode, it is characterised in that institute
State step 2) on first substrate formed poly (propylene carbonate) PPC films comprise the concrete steps that with sol evenning machine in 1500r/
Poly (propylene carbonate) PPC is coated on first substrate under min rotating speeds, then at a temperature of 120 degree heat 3-5min until
Film-forming.
3. the device architecture preparation method according to claim 1 using graphene as contact electrode, it is characterised in that institute
First, second, third, fourth substrate is stated for SiO2Substrate, SiO2/ Si substrates, MgO, Al2O3Substrate or flexible substrate.
4. the device architecture preparation method according to claim 1 using graphene as contact electrode, it is characterised in that institute
Graphene electrodes are stated for individual layer or several atomic layers, are that mechanical stripping is obtained.
5. the device architecture preparation method according to claim 1 using graphene as contact electrode, it is characterised in that institute
State MoS2The material of film is selected from black phosphorus, silene, germanium alkene, WS2、WTe2、MoSe、MoTe2、WSe2、WTe、TiSe2、PtSe2、
PdSe2、CdS、CdSe、BP、SnSe、PtS2、PbI2、GaSe、InSe、ReS2、ReSe2, it is obtained for mechanical stripping, the h-BN
Film obtains for mechanical stripping.
6. a kind of use the device junction using graphene as contact electrode prepared by claim 1 to 5 any one preparation method
Structure.
7. it is a kind of using graphene be used as contact electrode device architecture preparation method, it is characterised in that this method at least include with
Lower step：
1) first, second, third, fourth substrate and first, second PDMS film are provided；
2) poly (propylene carbonate) PPC films and the first h-BN films are sequentially formed on first substrate；Form one PPC-h-
BN structures；
3) PPC-h-BN construction machines that will be formed on first substrate are peeled off and are positioned on first PDMS film；
Form PDMS-PPC-h-BN structures；
4) MoS is formed on second substrate2Film；
5) with the PDMS-PPC-h-BN structures adsorption step 4) in MoS2Film；Acquisition PDMS-PPC-h-BN-
MoS2Structure；
6) graphene film is formed on the 3rd substrate, graphically to form Graphene electrodes；It is thin in the 2nd PDMS
Poly (propylene carbonate) PPC films are formed on film, then absorption is formed at Graphene electrodes on the 3rd substrate, formed PDMS-
PPC-graphene-structured；
7) the 2nd h-BN films are formed on the 4th substrate；By on the 3rd substrate
PDMS-PPC-graphene-structured is covered on the 2nd h-BN on the 4th substrate, takes PDMS film off, and acetone is gone
Except PPC, substrate-h-BN films-graphene-structured is formed；
8) PDMS-PPC-h-BN-MoS is obtained using step 52Structure is covered in the substrate-h-BN films-graphene knot
On structure；Remove after PDMS film and PPC films, form substrate-h-BN films-graphene-MoS2- h-BN structures；
9) by whole substrate-h-BN films-graphene-MoS2- h-BN structures are performed etching using reactive ion, form rule
Device architecture then, makes total section expose wire graphene edge；
10) deposited metal, covers the substrate-h-BN films-graphene-MoS exposed2- h-BN structural section structures, are formed
One-dimensional graphene is contacted with metal electrode.
8. the device architecture preparation method according to claim 7 using graphene as contact electrode, it is characterised in that institute
First, second, third, fourth substrate is stated for SiO2Substrate, SiO2/ Si substrates, MgO or Al2O3Substrate.
9. the device architecture preparation method according to claim 7 using graphene as contact electrode, it is characterised in that institute
State MoS2The material of film is selected from black phosphorus, silene, germanium alkene, WS2、WTe2、MoSe、MoTe2、WSe2、WTe、TiSe2、PtSe2、
PdSe2、CdS、CdSe、BP、SnSe、PtS2、PbI2、GaSe、InSe、ReS2、ReSe2。
10. a kind of use the device junction using graphene as contact electrode prepared by claim 7 to 9 any one preparation method
Structure.
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| CN105405965B (en) * | 2015-12-09 | 2018-09-25 | 中国科学院上海微系统与信息技术研究所 | A kind of high sensitivity graphene magnetic field sensor and preparation method thereof |
| CN106024760B (en) * | 2016-06-02 | 2018-06-29 | 中国科学院上海微系统与信息技术研究所 | It is a kind of for semiconductor devices of magnetic field shielding and preparation method thereof |
| US10910473B2 (en) | 2016-06-13 | 2021-02-02 | Cornell University | Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same |
| CN108899410A (en) * | 2018-07-06 | 2018-11-27 | 江苏心磁超导体有限公司 | Gallium nitride base graphene TES superconductive device and preparation method thereof |
| CN109560104A (en) * | 2018-12-20 | 2019-04-02 | 上海集成电路研发中心有限公司 | A kind of phase transition storage and preparation method thereof |
| CN111755338B (en) * | 2019-03-26 | 2022-08-23 | 深圳清力技术有限公司 | Atomic-level smooth electric connection sheet on surface of integrated device and preparation method thereof |
| CN110186979A (en) * | 2019-05-28 | 2019-08-30 | 南京邮电大学 | A kind of field effect transistor applied to highly sensitive gas sensor |
| CN110429174B (en) | 2019-08-14 | 2021-11-05 | 孙旭阳 | Graphene/doped two-dimensional layered material van der Waals heterojunction superconducting composite structure, superconducting device and preparation method thereof |
| CN110828375B (en) * | 2019-10-25 | 2022-06-17 | 东南大学 | Method for rapidly and non-etching transferring two-dimensional material and preparing heterojunction |
| CN113517285B (en) * | 2021-03-08 | 2023-01-06 | 复旦大学 | Two-dimensional complementary memory and preparation method thereof |
| CN113078054A (en) * | 2021-03-25 | 2021-07-06 | 中国科学院上海微系统与信息技术研究所 | Preparation method of electrode layer and semiconductor structure |
Citations (2)
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|---|---|---|---|---|
| CN103633024A (en) * | 2013-11-11 | 2014-03-12 | 西安电子科技大学 | Method for preparing h-BN medium graphene integrated circuits on large scale |
| CN103928340A (en) * | 2014-04-19 | 2014-07-16 | 复旦大学 | Direct growth method for two-dimensional molybdenum disulfide back gate device |
Family Cites Families (2)
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