CN111211186A - MoS for improving photoelectric detection performance2Phototransistor and method of manufacturing the same - Google Patents
MoS for improving photoelectric detection performance2Phototransistor and method of manufacturing the same Download PDFInfo
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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Abstract
MoS for improving photoelectric detection performance2A photoelectric transistor and a preparation method thereof relate to the technical field of photoelectric detection. Based on the novel 2D/0D hybridized interdigital phototransistor, the high responsivity, ultra-fast response speed and self-powered photoelectric detection performance are realized. The phototransistor includes: Si/SiO2Substrate, dual layer MoS2The thin film, the Pt electrode, the InP @ ZnS quantum dot and the silver film; multi-piece double-layer MoS2The thin film is arranged on Si/SiO2An upper surface of the substrate; in a double layer MoS2Film and Si/SiO2A Pt electrode is manufactured on the upper surface of the substrate and is used as a drain-source electrode; the Pt electrode is an interdigital electrode, the thickness of the electrode is 50nm, the width of the electrode is 2 micrometers, the finger length of the Pt electrode is 300 micrometers, and the wide distance between the two electrodes is 5 micrometers; InP @ ZnS quantum dot manufactured on Si/SiO2Substrate, dual layer MoS2Thin film and Pt electrode surfaces; Si/SiO2And manufacturing a silver film on the back of the substrate to be used as a back gate electrode. The 2-micron interdigital Pt electrode has the advantages that the design of the 2-micron interdigital Pt electrode can not only play a role in plasma resonance effect, but also increase the light responsivity; and asymmetric Pt/MoS2The introduction of the Schottky barrier can effectively balance the problem of light responsivity and light responsivity speed.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a MoS for improving photoelectric detection performance2A phototransistor and a method of fabricating the same.
Background
In recent years, two-dimensional (2D) material based phototransistors have been the leading edge of research in the field of photodetection, and are used in optical computing, optical logic, optical communications, and new artificial neuromorphic simulations, etc. In order to ensure the detection of weak signals and undistorted output of high-frequency signals, an ideal photoelectric detection device should have the detection performances of high responsivity and high response speed at the same time. Molybdenum disulfide (MoS)2) Being a member of the typical transition metal chalcogenides (TMDCs), are the star material for the next generation of optoelectronic devices due to their potential advantages of high in-plane carrier mobility, tunable bandgap, inherent flexibility, and good compatibility with other semiconductor materials. MoS2And the thickness of the atomic layer of other two-dimensional layered TMDCs can limit atoms and electrons in limited space freedom, and strong interaction between light and substances is realized. However, the thickness of the atomic layer inevitably results in a low total amount of photon absorption, thereby limiting device performance based on Photoconductive (PC) and Photovoltaic (PV) characteristics. Most of the reported MoS2And other TMDCs-based phototransistors, the photoresponse is still as low as mA.W as an important index of optoelectronic devices-1Of the order of magnitude of (d). Small number of literature newspapersRoad MoS2The base phototransistor can reach higher photoresponse under high bias voltage (>103A·W-1) This inevitably leads to large leakage current of the device, and high power consumption.
In terms of material system selection: zero-dimensional (0D) Colloidal Quantum Dots (CQDs) are excellent light absorbing and emitting materials with high quantum yield, broad spectral selectivity and good optical stability. The construction of a 0D/2D hybrid system is considered to be an effective strategy for improving the photoresponse capability of a two-dimensional material photodetector. In the prior art, many heavy metal quantum dots include HgTe, PbS, CdSe, CdSe @ ZnS, CsPbBr3，CsPbI3-xBrxHas atomic layer MoS2Constructing 0D/2D hybrid base phototransistors with devices up to 102～106A·W-1The optical responsivity of (2) is limited by the construction of the photoconductive device, and the optical responsivity is increased to only millisecond (1 to 420 ms). More importantly, the above-mentioned inherent toxicity of QDs is detrimental to our health and environment. The european union 'directive to limit hazardous substances' severely limits the use of these materials in the field of consumer electronics.
In terms of device structure design: designing new device structures including metal/semiconductor schottky contacts is an effective strategy to improve the performance of photodetection. The presence of a built-in electric field at the contact interface may facilitate efficient separation and collection of photogenerated carriers, overcoming the limitation of slow photoresponse speed. In addition, the built-in electric field is beneficial to the realization of self-powered characteristics of the device. Due to the limitations of large-scale two-dimensional layered TMDCs controllable synthesis, paired electrodes in the prior art are widely used to construct traditional three-terminal phototransistors, e.g., Hua Xu et al in graphene-MoS based technology2The schottky contact is introduced by an asymmetric metallization scheme using a two-step electron beam exposure. The built-in electric field at the interface gives it self-powering properties, and a fast response speed of 0.13 ms. The light responsivity is only 3.0 A.W due to the light absorption capability of the material system-1. The method for constructing the traditional three-terminal phototransistor with the asymmetric electrode inevitably causes the complex preparation methodTrivial, high cost and the like.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a MoS for improving photoelectric detection performance2The photoelectric transistor and the preparation method thereof realize the photoelectric detection performance with high responsivity, ultra-fast response speed and self power supply.
The technical scheme adopted by the invention for solving the technical problem is as follows:
MoS for improving photoelectric detection performance2A phototransistor, the phototransistor comprising: Si/SiO2Substrate, dual layer MoS2The thin film, the Pt electrode, the InP @ ZnS quantum dot and the silver film; multiple pieces of the double-layer MoS2A thin film is arranged on the Si/SiO2An upper surface of the substrate; in the double layer MoS2Film and Si/SiO2Manufacturing the Pt electrode on the upper surface of the substrate as a drain-source electrode; the Pt electrode is an interdigital electrode, the thickness of the electrode is 50nm, the width of the electrode is 2 micrometers, the finger length of the Pt electrode is 300 micrometers, and the wide distance between the two electrodes is 5 micrometers; the InP @ ZnS quantum dot is manufactured on Si/SiO2Substrate, dual layer MoS2Thin film and Pt electrode surfaces; the Si/SiO2And manufacturing a silver film on the back of the substrate to be used as a back gate electrode.
Preferably, the dual layer MoS2The film is triangular.
Preferably, the dual layer MoS2The thin film is randomly distributed under the two Pt interdigital electrodes.
MoS for improving photoelectric detection performance2A method of fabricating a phototransistor, the method comprising the steps of:
the method comprises the following steps: double-layer MoS grown by chemical vapor deposition method2A film;
step two: MoS identified as double-layer by wet transfer technique2Film transfer to the Si/SiO2On the substrate, as the gate dielectric;
step three: preparing a Pt interdigital electrode by adopting an ultraviolet lithography technology, an electron beam evaporation technology and a stripping process;
step four: InP @ ZnS quantum dots dissolved in toluene solventSpin coating on MoS2Heating and annealing on the phototransistor;
step five: in Si/SiO2And preparing the back gate electrode of the photoelectric transistor on the back surface of the substrate by using quick-drying silver paste.
Preferably, in the step one, MoO3The powder and S powder were heated to 700 ℃ and 170 ℃ for 40 minutes, respectively, as a molybdenum source and a sulfur source.
Preferably, in the fourth step, InP @ ZnS quantum dots dissolved in toluene solvent and having a concentration of 0.25mg/ml are spin-coated at 2000 rpm for 60s in MoS2On the phototransistor and heated in an air atmosphere at 80 c for 120 s.
Preferably, in the fourth step, MoS is treated under Ar environment2The phototransistor was annealed at 150 ℃ for 1 hour.
The invention has the beneficial effects that:
1. compared with the prior MoS2The invention constructs a 0D/2D hybrid-based phototransistor and constructs the phototransistor based on InP @ ZnS-MoS for the first time2The 0D/2D hybrid structure phototransistor of (1). InP is suitable for manufacturing high-speed, high-frequency, high-power and luminous electronic devices. In particular, InP has a similar band gap as CdSe of 1.34 eV. InP @ ZnS core-shell quantum dots are constructed by adopting a ZnS shell layer to serve as an environment-friendly light absorption and emission material, and the heavy metal-free environment-friendly photoelectric transistor is beneficial to commercial popularization.
2. The interdigitated electrodes employed in the present invention have several potential advantages for TMDCs-based phototransistors: (i) interdigitated electrodes with a patterned array of metal enhance the interaction of light with matter due to metal Surface Plasmon (SPs) resonances, another viable method to improve the photo-responsivity of phototransistors. (ii) When the interdigital electrodes are integrated on a plurality of triangular 2D materials, the asymmetric source-drain Schottky contact area between the metal electrode and the 2D channel material can provide a built-in electric field in the phototransistor array, so that the problems of photoresponse and photoresponse speed can be relieved to a certain extent, and the phototransistor is endowed with a self-powered photoelectric detection function. (iii) Compared with the traditional paired electrodes, the interdigital electrode can be connected with a plurality of series-parallel three-terminal transistor unit structures. The method is beneficial to breaking through the integration application technology barrier of the photoelectric detector based on the two-dimensional material and is beneficial to popularization and commercial application.
Drawings
FIG. 1 shows a MoS for improving photoelectric detection performance2The phototransistor is partially enlarged.
FIG. 2(a) InP @ ZnS-MoS2The system has no radiation energy transfer mechanism diagram.
FIG. 2(b) is a schematic structural diagram of spherical InP @ ZnS core-shell quantum dots.
Fig. 2(c) absorption spectra of InP @ ZnS quantum dots.
Fig. 2(d) Photoluminescence (PL) spectra of InP @ ZnS quantum dots.
FIG. 2(e) PL Spectrum and double-layer MoS of InP @ ZnS Quantum dots2The absorption spectrum of (1).
FIG. 2(f) InP @ ZnS quantum dots at different MoS2Fluorescence lifetime at thickness.
FIG. 3(a) MoS2The output I-V characteristic of the phototransistor.
FIG. 3(b) InP @ ZnS-MoS2The output I-V characteristics of the hybrid phototransistor.
FIG. 4(a) MoS under 532nm laser irradiation at different power intensities2Base phototransistor and InP @ ZnS-MoS2The hybrid phototransistor transfers a characteristic curve.
FIG. 4(b) different VgsLower MoS2Base phototransistor and InP @ ZnS-MoS2Hybrid phototransistor photocurrent IphDependence on optical power density.
FIG. 4(c) MoS2Base phototransistor and InP @ ZnS-MoS2The dependence of the optical responsivity of the hybrid phototransistor on the optical power density.
FIG. 5(a) is a schematic diagram of a response time measurement experimental apparatus.
FIG. 5(b) MoS2Base phototransistor and InP @ ZnS-MoS2Photovoltaic voltage versus time curve of the hybrid phototransistor.
FIG. 6(a) InP under 2000Hz high frequency light pulse irradiation@ZnS-MoS2The photovoltaic voltage of the hybrid phototransistor device after 4000 consecutive cycles is plotted over time.
FIG. 6(b) InP @ ZnS-MoS2Single pulse photovoltaic response amplification curve of hybrid phototransistor device.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
As shown in FIG. 1, a MoS for improving photoelectric detection performance2A phototransistor, the phototransistor comprising: Si/SiO2Substrate, dual layer MoS2The thin film, the Pt electrode, the InP @ ZnS quantum dot and the silver film; multiple pieces of the double-layer MoS2A thin film is randomly arranged on the Si/SiO2An upper surface of the substrate; wherein the double layer MoS2The film is in a triangular structure. The Pt electrode is manufactured on the double-layer MoS2Film and Si/SiO2The upper surface of the substrate is used as a drain-source electrode; the Pt electrode is an interdigital electrode, the thickness of the Pt electrode is 50nm, the width of the Pt electrode is 2 mu m, and the surface plasma effect is realized; the length of the Pt electrode is 300 mu m, and the wide spacing between the two electrodes is 5 mu m; this bridge-like MoS2Connected together under different interdigital electrode structures to form a reticular channel shape. In this embodiment, the number of Pt interdigital electrodes is 30 pairs. The InP @ ZnS quantum dot is manufactured on Si/SiO2Substrate, dual layer MoS2Thin film and Pt electrode surfaces; the InP @ ZnS quantum dot covering layer is used as a light absorption material, and current carriers in the device are transmitted to an adjacent electrode from one electrode and are diffused in the Pt interdigital electrode pattern, so that a simple photoelectric transistor device is realized. The Si/SiO2And manufacturing a silver film on the back of the substrate to be used as a back gate electrode. In the experiment, a top-down laser irradiation mode is adopted, and the light collection efficiency is improved by adopting a field effect transistor with a back gate electrode structure.
InP @ ZnS-MoS constructed in the invention2The principle of hybrid system to improve light absorption is as follows:
the mechanism is shown in FIG. 2(a), where photo-excited electron-hole pairs (excitons) do not emit photons from quantum dots (donors) and are transferred to MoS by nonradiative energy transfer2(acceptor). FIG. 2(b) shows a schematic diagram of a spherical InP @ ZnS core-shell quantum dot model with an average size of 9nm (core diameter ≈ 6nm, shell thickness ≈ 1.5 nm). InP has good crystallinity, with a lattice spacing of 0.32nm corresponding to the (111) crystal plane of the InP zincblende structure. The ZnS shell layer passivates surface defects of the InP core, and a composite channel of exciton relaxation to a defect energy level in a non-radiative energy transfer process is reduced, so that the non-radiative energy transfer efficiency between 0D and 2D is improved. Fig. 2(c) and 2(d) show the absorption spectrum and Photoluminescence (PL) spectrum of InP @ ZnS quantum dots. Therefore, the quantum dots show strong light absorption in the range from ultraviolet to visible, especially in the blue-violet band (400-480 nm), which just compensates the double-layer MoS2Weak light absorption characteristics in this band (see left side of fig. 2 (e)). In addition, quantum dots can achieve optical excitation from the 290nm ultraviolet band, and the PL peak position (627nm) is independent of the optical excitation wavelength. FIG. 2(e) shows PL spectra and double-layer MoS of InP @ ZnS quantum dots2The absorption spectra have strong overlapping, which shows that the InP @ ZnS-MoS of the invention2The non-radiative energy transfer can be realized between the 0D/2D hybrid structures.
To further demonstrate the strong coupling effect, we studied InP @ ZnS quantum dots at different MoS2The fluorescence lifetime at thickness was followed and compared to the transient fluorescence lifetime of InP @ ZnS quantum dots. As shown in FIG. 2(f), the average lifetime of InP @ ZnS quantum dots is 35.66ns, which is the lifetime of the quantum dots on a transparent quartz substrate (i.e., without MoS)2In the case of (1). When the quantum dots are spin-coated on 4L-MoS2The lifetime of the quantum dots is reduced to 15.36ns when compared with 2L or 1L-MoS2When a 0D/2D hybrid system is constructed, the service life of the quantum dots is further quenched to 10.01ns and 9.72 ns. The energy transfer efficiency depends on the strength of the near-field interaction, which is related to the dielectric shielding effect. Thus, with MoS2The dielectric shielding effect is reduced by the reduction of the thickness (from four layers to a single layer), and the corresponding non-radiative energy transfer efficiency can be improved to 73 percent. With single layer MoS2Similarly, a dual layer MoS2Also has two-dimensional geometry, based on recent theoretical calculation of film thickness, double-layer MoS2Has smaller band gap and smaller specific surface area, and shows a better contrastLayer MoS2Better photoelectric characteristics. Quantum dot/dual layer MoS2The energy transfer efficiency of the hybrid system is close to that of quantum dot/single-layer MoS2Hybrid systems. In conclusion, the invention adopts InP @ ZnS quantum dots to assist light absorption and adopts double-layer MoS2As a channel material of the phototransistor, photoelectric conversion is realized.
InP@ZnS-MoS2Hybrid phototransistor and MoS2Comparison of output characteristics of the base phototransistor:
the invention compares different grid voltages (V)gs0-40V) lower MoS2And InP @ ZnS-MoS2The output I-V characteristics of the hybrid phototransistor. When the forward gate voltage (V) applied by the devicegs) At increasing time, MoS2More electrons in the channel are gradually polarized by the gate electric field, and higher source leakage current (I) is obtained in the saturation stateds). As shown in FIGS. 3(a) and 3(b), before and after the spin-coating of InP @ ZnS quantum dots, at the same VgsIn the (40V) state, IdsCan be improved to about 15 muA. This indicates that the presence of InP @ ZnS quantum dots does not affect MoS2The electrical properties of the channel (i.e., the ability to polarize electrons).
InP@ZnS-MoS2Hybrid phototransistor and MoS2And (3) comparing the photoresponse performance of the base phototransistor:
FIG. 4(a) shows MoS under 532nm laser irradiation at different power intensities2Base phototransistor and InP @ ZnS-MoS2The hybrid phototransistor transfers a characteristic curve. InP @ ZnS-MoS with increasing optical power compared to nearly identical dark state transfer curves2I of hybrid phototransistordsBiMoS2I of base phototransistordsMuch larger. In order to compare the optical response characteristics of the devices more clearly, the invention compares the two devices at different VgsLaser power dependent photocurrent Iph(Iph＝Iilluminated-Idark). As shown in FIG. 4(b), four kinds of Vg(i.e., 10/20/30/40V) when the laser power was increased to 170mW/cm2In time, InP @ ZnS-MoS2I of hybrid phototransistorphBiMoS2I of base phototransistorphThe increase is about six times. I isphThe improvement is attributed to the excellent light capture capability of InP @ ZnS quantum dots and InP @ ZnS-MoS2The hybrid system has high efficiency of non-radiative energy transfer.
The optical responsivity (R) is a key performance index of a photoelectric detection device, and is used for evaluating the detection efficiency of converting an optical signal into an electrical signal, and can be expressed by the following formula:
where P is the laser power density and S is the effective area illuminated on the device. Here, the active region of the phototransistor is composed of bridge-like MoS between inter-finger electrodes2Is determined. FIG. 4(c) shows the dependence (V) of the photo-responsivity of the phototransistor on the optical power density g40V) for MoS2Base phototransistor, when the optical power density increases by 34mW/cm2When the light response reaches 222.5 A.W-1Maximum value, as laser power density further increased to 170mW/cm2The optical responsivity of the optical waveguide is reduced to 81.0 A.W-1This is due to the fact that when the device is irradiated with high power light, the heat generated causes carrier scattering and increased recombination, MoS2Maximum responsivity of the base phototransistor over most of the previously reported MoS2Base phototransistor mA.W-1The magnitude of the optical responsivity is increased by three to four orders of magnitude. MoS2The excellent photoresponse characteristics of the base phototransistor are attributed to the field enhancement caused by the surface plasmon effect of the designed interdigitated electrodes. For InP @ ZnS-MoS2Hybrid phototransistor capable of realizing 1374 A.W-1The high light responsivity of (A) is equal to the super high light responsivity reported so far>103A·W-1) MoS of (1)2The hybrid phototransistor is comparable. In the existing surface plasmon enhanced photodetection technology, a plasmonic metal array is generally covered on the surface of the 2D channel material by a photolithography technique, but inevitably causes the exposure area of the channel material to be reduced, thereby sacrificing the light absorption amount of the 2D material itself to some extent. Phase (C)In contrast, the present invention proposes interdigitated electrodes for a 2 μm patterned Pt array. In addition to conductive electrodes, the interdigitated metal array as a surface plasma source can not only enhance MoS2Can enhance the light absorption of InP @ ZnS-MoS2The system has no radiative energy transfer efficiency. TABLE 1 InP @ ZnS-MoS of the present invention2Base phototransistor and other reported MoS2The key performance index comparison research of the low-dimensional hybrid photoelectric transistor device proves that the comprehensive performance of the photoelectric detection device is improved in a breakthrough manner through material system selection and device structure design.
Table 1 shows InP @ ZnS-MoS of the present invention2Base phototransistor and other reported MoS2Comparison research on key performance indexes of base low-dimensional hybrid type photoelectric transistor device
InP@ZnS-MoS2Hybrid phototransistor and MoS2The self-power characteristic and the cycle retention characteristic of the base photoelectric transistor are compared:
interdigital Pt electrode and MoS adopted in the invention2Schottky contact of channel material to realize InP @ ZnS-MoS2The photovoltaic (self-powered) properties of hybrid phototransistors are based. Fig. 5(a) is a schematic diagram of a response time measurement experimental device, and the system consists of a laser chopper, a digital oscilloscope and a load resistor. Here, a 1M Ω load resistor in series with the phototransistor acts as a voltage divider to indirectly monitor the transient photovoltaic response of the device. Pulse laser is realized by combining 532nm laser and a chopper (0-4000 Hz) with adjustable frequency. When interdigitated Pt electrodes are deposited on MoS2When on material, MoS due to Fermi level pinning effect of metal2Electrons in (2) will diffuse to the Pt electrode (W)F5.65 eV). Therefore, MoS is near the Pt surface2Will bend downwards and the final fermi level will coincide with the level of Pt. Thereby promoting MoS2A strong built-in electric field appears at the interface to the Pt electrode. In an interdigital phototransistor with multiple channels, the source and the drain are connectedThe built-in electric field formed by the drain electrode is opposite in direction. But due to MoS2The triangular structure of the channel material, with different source/drain contact areas between the electrode and the channel material. The remaining schottky junctions, despite the cancellation effect, still guarantee the presence of a built-in electric field in the phototransistor array. The built-in electric field facilitates that photogenerated electron-hole pairs can be separated and driven into opposite directions, thereby generating a photovoltaic voltage. Such phototransistors can be used as zero-bias (self-powered) photodetectors due to the absence of an externally biased drive, and the self-powered photovoltaic nature facilitates the use of optoelectronic devices for low power and high density integration.
And MoS2Base phototransistor comparison, InP @ ZnS-MoS2The hybrid phototransistor is not only influenced by the plasma resonance effect of the interdigital Pt electrode, but also influenced by the non-radiative energy transfer of the InP @ ZnS quantum dot. As shown in fig. 5(b), the photovoltaic voltage increased from 150mV to 300mV after overlaying the InP @ ZnS quantum dot layer. The enhanced self-powering capability is attributed to the enhanced light collection capability of the InP @ ZnS quantum dots, InP @ ZnS-MoS after three months of phototransistor exposure to the environment2The photovoltaic voltage of the base-hybridized phototransistor device is maintained at an initial value while the MoS is maintained2The photovoltaic characteristics of the base photoelectric transistor device are slightly reduced, which shows that InP @ ZnS quantum dots can be simultaneously used as packaging layers to avoid MoS2Directly exposed to the environment, thereby preventing degradation of the photoresponse characteristics of the photodetector device.
InP@ZnS-MoS2Evaluation of tolerance and photoresponse speed performance of hybrid phototransistor:
fig. 6(a) shows that the InP @ ZnS-MoS hybrid phototransistor device can still work well after 4000 consecutive cycles under irradiation of 2000Hz high frequency optical pulses, which indicates that the device has good repeatability and ultra-fast response speed. The response speed is one of the key indexes of the photoelectric detector, and is particularly applied to the fields of optical communication, monitoring, imaging, sensing and the like. It can be estimated by detecting the change (rising/falling edge) of the photovoltaic voltage with an oscilloscope. FIG. 6(b) shows InP @ ZnS-MoS2Unipulse of hybrid phototransistor deviceImpulse photovoltaic response amplification curve. The hybrid phototransistor devices of the present invention had ultrafast rise and fall times of 21.5 and 133.3 mus. As shown in Table 1, the results are the currently reported MoS2One of the results of the fastest response speed in the base-hybrid phototransistor. The response speed of conventional high-responsivity photodetectors is typically tens of milliseconds or longer. InP @ ZnS-MoS in the invention2The ultra-fast response speed of the hybrid phototransistor devices is due to the specially designed device structure. MoS2The channel material receives a large number of electron-hole pairs from InP @ ZnS quantum dots through a non-radiative energy transfer process with the aid of a surface plasma effect. Pt electrode and MoS using interdigitated fingers2Schottky junction between materials, photo-generated electrons can be effectively separated and injected into MoS2In the material, due to MoS2The channel material has higher in-plane mobility, and the double-layer MoS in the invention2A fast carrier transport channel is provided.
MoS for improving photoelectric detection performance2As shown in the figure, the preparation method of the phototransistor comprises the following steps:
the method comprises the following steps: weighing Aldrich brand, MoO with content of 99.5%3Powders and Aldrich brand, S powder in an amount of 99.98% as molybdenum and sulfur source. Ar/H with the flow rate of 15sccm is introduced into the quartz tube2(19:1) the mixed gas serves as a carrier gas and a reducing gas. During the preparation process, MoO is added3The source (0.05g) and the S source (0.2g) were heated to 700 ℃ and 170 ℃ respectively and maintained for 40 minutes to obtain a two-layer MoS2A film;
step two: adopting a wet transfer technology to confirm the double-layer triangular MoS2The film was transferred to the Si/SiO film having dimensions of 1.3cm by 1.7cm2On the substrate, as the gate dielectric;
step three: patterning the interdigital electrode by adopting an ultraviolet lithography technology, and preparing a drain-source electrode of the phototransistor by utilizing an electron beam evaporation technology, wherein the drain-source electrode is Pt and has the thickness of 50 nm; MoS with interdigital electrode realized by stripping process2A base phototransistor. Pt electrode fingers 300 μm long, 2 μm wide, and spaced apart5μm；
Step four: InP @ ZnS quantum dots dissolved in a toluene solvent and having a concentration of 0.25mg/ml are spin-coated at 2000 rpm for 60s in MoS2Heating the photoelectric transistor in an air environment at 80 ℃ for 120 s; InP @ ZnS-MoS under Ar environment2The base hybrid phototransistor is annealed for 1 hour at 150 ℃, on one hand, the Pt/MoS is improved2On the other hand, the toluene solvent was volatilized (boiling point of toluene: 110.6 ℃ C.);
step five: in Si/SiO2And preparing the back gate electrode of the photoelectric transistor on the back surface of the substrate by using quick-drying silver paste.
Claims (7)
1. MoS for improving photoelectric detection performance2A phototransistor, wherein the phototransistor comprises: Si/SiO2Substrate, dual layer MoS2The thin film, the Pt electrode, the InP @ ZnS quantum dot and the silver film; multiple pieces of the double-layer MoS2A thin film is arranged on the Si/SiO2An upper surface of the substrate; in the double layer MoS2Film and Si/SiO2Manufacturing the Pt electrode on the upper surface of the substrate as a drain-source electrode; the Pt electrode is an interdigital electrode, the thickness of the electrode is 50nm, the width of the electrode is 2 micrometers, the finger length of the Pt electrode is 300 micrometers, and the wide distance between the two electrodes is 5 micrometers; the InP @ ZnS quantum dot is manufactured on Si/SiO2Substrate, dual layer MoS2Thin film and Pt electrode surfaces; the Si/SiO2And manufacturing a silver film on the back of the substrate to be used as a back gate electrode.
2. MoS for improving photoelectric detection performance according to claim 12Phototransistor, wherein the double layer MoS2The film is triangular.
3. MoS for improving photoelectric detection performance according to claim 12Phototransistor, wherein the double layer MoS2The thin film is randomly distributed under the two Pt interdigital electrodes.
4. An improved photoelectric detection method based on claims 1-3Performance MoS2A method of fabricating a phototransistor, the method comprising the steps of:
the method comprises the following steps: double-layer MoS grown by chemical vapor deposition method2A film;
step two: MoS identified as double-layer by wet transfer technique2Film transfer to the Si/SiO2On the substrate, as the gate dielectric;
step three: preparing a Pt interdigital electrode by adopting an ultraviolet lithography technology, an electron beam evaporation technology and a stripping process;
step four: InP @ ZnS quantum dots dissolved in toluene solvent are coated on MoS in a spin mode2Heating and annealing on the phototransistor;
step five: in Si/SiO2And preparing the back gate electrode of the photoelectric transistor on the back surface of the substrate by using quick-drying silver paste.
5. The method according to claim 4, wherein in the first step, MoO is used3The powder and S powder were heated to 700 ℃ and 170 ℃ for 40 minutes, respectively, as a molybdenum source and a sulfur source.
6. The method according to claim 4, wherein in the fourth step, InP @ ZnS quantum dots dissolved in toluene solvent and having a concentration of 0.25mg/ml are spin-coated at 2000 rpm for 60s on MoS2On the phototransistor and heated in an air atmosphere at 80 c for 120 s.
7. The method according to claim 4, wherein in the fourth step, the MoS is treated under Ar atmosphere2The phototransistor was annealed at 150 ℃ for 1 hour.
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