CN203631585U

CN203631585U - Silicon-ytterbium quantum cascading and PIN mixing light-emitting tube

Info

Publication number: CN203631585U
Application number: CN201320516723.8U
Authority: CN
Inventors: 黄伟其
Original assignee: Guizhou University
Current assignee: Guizhou University
Priority date: 2013-08-23
Filing date: 2013-08-23
Publication date: 2014-06-04
Anticipated expiration: 2023-08-23

Abstract

The utility model discloses a silicon-ytterbium quantum cascading and PIN mixing light-emitting tube, which comprises a monocrystalline silicon substrate. A P-type Si layer or an N-type Si layer is arranged on the monocrystalline silicon substrate; a silicon-ytterbium quantum cascading film is arranged on the P-type Si layer; the silicon-ytterbium quantum cascading film comprises more than two layers of ytterbium films and a silicon layer alternatively arranged between the ytterbium films; the top part of the silicon-ytterbium quantum cascading film is provided with the N-type Si layer; a transparent electrode film is arranged on the N-type Si layer at the top part; the P-type Si layer is led out by the electrode and then is connected with the positive electrode of a power supply; and the N-type Si layer is led out by the electrode film layer and is then connected with the negative electrode of the power supply. A localization state sub-band structure in the silicon semiconductor energy bands can be formed, the four-energy-grade system is formed, the particle number inversion can be formed between the energy grades of the two sets of the localization state sub-bands to generate strong light-emitting, and even lasing, LED light emitting in a photo-communication waveband within 1400nm-1600nm can be realized, the cost is low, and the use effects are good.

Description

Silicon ytterbium quanta cascade and PIN mixed luminescence pipe

Technical field

The utility model relates to a kind of nano-photon material and device technology field, especially a kind of silicon ytterbium quanta cascade and PIN mixed luminescence pipe.

Background technology

At present, we are in the rear information age, are characterized in by electronic information step transition, to the photon information stage, now having completed the transfer process take photon as information carrier, as realized optical fiber communication and the optical communication of full light.Current development enters integrated entirely photochemical with chip-scale of photoelectron on chip, and this is to realize the key that light quantum information processing and light quantum information are calculated, and the light source for optical interconnection of making on silicon is the work of a bottleneck with propagating node.

As everyone knows, be based upon microelectronics information industry on silica-based highly developed, but be subject to the restriction of size and power consumption, Moore's Law has arrived the limit of the scope of application.Scientists attempts to set up brand-new light quantum information processing system on silica-based, replaces present microelectronics information system, realizes revolutionary leap of information age.Here, we will solve several critical problems, the one, on what material, set up light quantum information processing system, some material is the optical property fine (for example gallium arsenide semiconductor material) of semi-conducting material particularly, but silicon materials have good basis and belong to environment-friendly materials, set up light quantum information processing system so be finally chosen on silica-based.The 2nd, need to improve the optical property of silicon materials, we know that the indirect band gap structure of monocrystalline silicon causes the luminous efficiency of silicon materials very low, and the approach that improves the optical property of silicon materials is mainly adopts band engineering, the low-dimensional nano structure of preparing silicon obtains collimation tape splicing gap structure, as materials such as nano-silicon, porous silicon, germanium silicon strained layer and nano silicon oxides.

Stem-winding is that the work of L.Pavesi research group in 2000 has realized the optical gain of the luminescence generated by light of embedding nano silicon structure in silica, and this has established the basis of electric pump and optical pumping total silicon base coherent source.But, be summed up, the research work of nearly ten years both at home and abroad still has problems: in the preparation of above-mentioned material, have many deficiencies, as porous silicon be difficult for preserving, luminous unstable, the preparation cost high (traditional molecular beam epitaxy (MBE) method and chemical vapor deposition (CVD) method) of nano-silicon and germanium silicon strained layer, be difficult for industrialization etc.

Utility model content

The purpose of this utility model is: a kind of silicon ytterbium quanta cascade and PIN mixed luminescence pipe are provided, and it is luminous that it has realized LED at 1400nm to 1600nm optical communicating waveband, to overcome the deficiencies in the prior art.

The utility model is achieved in that silicon ytterbium quanta cascade and PIN mixed luminescence pipe, comprise monocrystalline silicon basic unit, in monocrystalline silicon basic unit, be provided with P type Si layer or N-type Si layer, on P type Si layer, be provided with silicon ytterbium quanta cascade film, silicon ytterbium quanta cascade film is by two-layer above ytterbium film, and between ytterbium film, replaces silicon layer composition; Top at silicon ytterbium quanta cascade film is provided with N-type Si layer, on the N-type Si at top layer, is provided with transparency electrode ito thin film; P type Si layer is connected with the positive pole of power supply after drawing by metal electrode, and N-type Si layer is connected with the negative pole of power supply after drawing by electrode ITO rete.

The thickness of described silicon ytterbium quanta cascade film is 10～100nm.

The side of metal electrode in P type Si layer top.The structure that metal electrode adopts homonymy to draw.

Laser parameter for the pulse laser etching of machine silicon ytterbium quanta cascade film is, wavelength 1064nm, 60～100 nanoseconds of pulsewidth, repetition rate 800～1200 times/second; Laser parameter for the pulsed laser deposition of machine silicon ytterbium quanta cascade film is, wavelength 355nm, 80～100 nanoseconds of pulsewidth, repetition rate 1000～2000 times/second.

The utility model proposes and design a kind of silicon ytterbium quanta cascade and PIN mixed structure, it can form the local state sub band structure of Si semiconductor in being with, form four level system, between two groups of local state sub-band energy level wherein, can form population inversion, produce strong luminous and even sharp penetrating.It is luminous that the silicon ytterbium quanta cascade preparing according to the method and PIN mixed luminescence pipe can have been realized LED to 1600nm optical communicating waveband at 1400nm, and its preparation method is simple, is easy to industrialization, and with low cost, result of use is good.

Accompanying drawing explanation

Fig. 1 is the product structure schematic diagram of embodiment;

Fig. 2 is the luminous spectrogram of the product of embodiment;

Fig. 3 is silicon ytterbium quanta cascade and energy diagram corresponding to PIN mixed structure of embodiment.

Embodiment

Embodiment of the present utility model: the structure of silicon ytterbium quanta cascade and PIN mixed luminescence pipe as shown in Figure 1, comprise monocrystalline silicon basic unit 1, in monocrystalline silicon basic unit 1, be provided with P type Si layer 2, on P type Si layer 2, be provided with silicon ytterbium quanta cascade film, the thickness of silicon ytterbium quanta cascade film is 50nm, silicon ytterbium quanta cascade film is by two-layer ytterbium layer 4, and between ytterbium layer 4 alternately one deck silicon layer 5 form; Top at silicon ytterbium quanta cascade film is provided with N-type Si layer 3, on the N-type Si at top layer 3, is provided with transparent electrode thin film 6; P type Si layer 2 adopts golden Au as electrode by metal electrode 8() be connected with the positive pole of power supply 7 after drawing, the side of metal electrode 8 in P type Si layer 2 top, N-type Si layer 3 is drawn afterwards and is connected with the negative pole of power supply 7 by transparent membrane ITO electrode 6.

The preparation of silicon ytterbium quanta cascade and PIN mixed luminescence pipe: monocrystalline silicon piece is carried out to the doping of P type, make it form the doped silicon wafer in resistivity 2～20 Europe centimetre, remove the silicon oxide layer that forms of surface with hydrofluoric acid in air, and with alcohol and deionized water clean surface; Adopt the full photon method of pulse laser etching and pulsed laser deposition to process doped silicon wafer, in monocrystalline silicon basic unit 1, prepare P type Si layer 2; On P type Si layer 2 in monocrystalline silicon basic unit 1, prepare silicon ytterbium quanta cascade film; The preparation concrete steps of silicon ytterbium quanta cascade film are a) on the P type Si layer 2 of the method for employing pulsed laser deposition in monocrystalline silicon basic unit 1, to prepare one deck ytterbium layer 4; B) adopt the full photon method of pulse laser etching and pulsed laser deposition to process monocrystalline silicon piece, on ytterbium layer 4, prepare one deck silicon layer 5; C) on silicon layer 5, adopt the method for pulsed laser deposition to prepare one deck ytterbium layer 4, prepare and so forth silicon ytterbium quanta cascade film; Top at silicon ytterbium quanta cascade film prepares N-type Si layer 3; The product for preparing N-type Si layer 3 at the top of silicon ytterbium quanta cascade film is put into high-temperature annealing furnace, in nitrogen atmosphere, keep 1000 ℃ of high annealings 300 seconds, again put into high-temperature annealing furnace after naturally cooling to room temperature, under oxygen atmosphere foxing part, keep 1000 ℃ of high annealings 150 seconds; On the N-type Si at top layer 3, adopt the method for pulsed laser deposition to prepare layer of transparent electrode film 6; On P type Si layer 2 and N-type Si layer 3, difference extraction electrode, is connected to P type Si layer 2 on the positive pole of power supply 7 by metal electrode 8, and N-type Si layer 3 is connected to by electrode on the negative pole of power supply 7; In above steps, adopt the full photon method of pulse laser etching and pulsed laser deposition specifically, laser with the pulse laser beam of 1064nm, 60～100 nanoseconds of pulsewidth, repetition rate 800～1200 times/second as pulse laser etching, regulate its power density to producing white plasma aura, the pulse laser beam effect sample that use regulates in nitrogen atmosphere 5～9 seconds; Use again the pulse laser beam of 355nm, 80～100 nanoseconds of pulsewidth, repetition rate 1000～2000 times/second as the laser of pulsed laser deposition, in nitrogen atmosphere, make pulsed laser deposition;

In embodiment, silicon ytterbium quanta cascade and PIN mixed luminescence pipe are luminous to the LED of 1600nm optical communicating waveband at 1400nm, electric pump parameter scope: voltage: 3-10V, electric current: 0.6A-1.6A.The luminous maximum power of LED: 100mW.Its luminous spectrum as shown in Figure 2.

The instrument that the full photon method of pulse laser etching and pulsed laser deposition of realizing in embodiment adopts is for having obtained the equipment of license (patent No. is: ZL.201220093380.4) before applicant.

The scheme of embodiment is that P type Si layer 2 is in bottom, N-type Si layer 3 is at top, but those skilled in the art knows, P type Si layer 2 and the place-exchange of N-type Si layer 3 also can be realized, but, no matter how P type Si layer 2 arranges with the position of N-type Si layer 3, and P type Si layer 2 is all the positive pole that connects power supply 7, and N-type Si layer 3 is to be all connected on the negative pole of power supply 7.

Claims

1. a silicon ytterbium quanta cascade and PIN mixed luminescence pipe, comprise monocrystalline silicon basic unit (1), it is characterized in that: in monocrystalline silicon basic unit (1), be provided with P type Si layer (2) or N-type Si layer (3), on P type Si layer (2), be provided with silicon ytterbium quanta cascade film, silicon ytterbium quanta cascade film is by two-layer above ytterbium film (4), and between ytterbium film (4), replaces silicon layer (5) composition; Top at silicon ytterbium quanta cascade film is provided with N-type Si layer (3), is provided with transparency electrode ito thin film (6) on the N-type Si at top layer (3); P type Si layer (2) is connected with the positive pole of power supply (7) after drawing by metal electrode (8), and N-type Si layer (3) is connected with the negative pole of power supply (7) after drawing by electrode ITO rete (6).

2. silicon ytterbium quanta cascade according to claim 1 and PIN mixed luminescence pipe, is characterized in that: the thickness of described silicon ytterbium quanta cascade film is 10～100nm.

3. silicon ytterbium quanta cascade according to claim 1 and PIN mixed luminescence pipe, is characterized in that: the side of metal electrode (8) in P type Si layer (2) top.