CN103022898B - ZnO-based low-threshold electrically-pumped random laser device with silicon substrate and method for manufacturing ZnO-based low-threshold electrically-pumped random laser device - Google Patents

ZnO-based low-threshold electrically-pumped random laser device with silicon substrate and method for manufacturing ZnO-based low-threshold electrically-pumped random laser device Download PDF

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CN103022898B
CN103022898B CN201310011755.7A CN201310011755A CN103022898B CN 103022898 B CN103022898 B CN 103022898B CN 201310011755 A CN201310011755 A CN 201310011755A CN 103022898 B CN103022898 B CN 103022898B
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silicon substrate
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史志锋
杜国同
张宝林
张源涛
李万程
董鑫
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BINHAI ZHIRUN ELECTRONIC CO., LTD.
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Jilin University
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Abstract

The invention belongs to the technical field of semiconductor luminescent devices, and particularly relates to a ZnO-based low-threshold electrically-pumped random laser device with a silicon substrate and a method for manufacturing the ZnO-based low-threshold electrically-pumped random laser device. The ZnO-based low-threshold electrically-pumped random laser device comprises the silicon substrate, a quasi-intrinsic ZnO luminescent layer, an n-type MgZnO current injection layer and a semitransparent electrode layer, and an ohmic contact electrode layer is deposited on the back of the silicon substrate. An MgZnO thin film not only is used as an electron injection layer, but also is used as a transparent window layer for emitted light. The ZnO-based low-threshold electrically-pumped random laser device is characterized in that a graphical SiO<2> current limiting layer is arranged between the silicon substrate and the quasi-intrinsic ZnO luminescent layer and can greatly reduce threshold current of a laser device, and the photovoltaic conversion efficiency of the device is improved. The method can be used for manufacturing the low-threshold electrically-pumped laser device, and is compatible to a mature process for a silicon device, the cost is low, and the application range of the device is further expanded.

Description

A kind of silicon substrate zno-based low-threshold power pumping Random Laser device and preparation method thereof
Technical field
The invention belongs to technical field of semiconductor luminescence, be specifically related to a kind of based on silicon substrate zno-based low-threshold power pumping Random Laser device and preparation method thereof.
Background technology
Due to the development of photoelectric technology, ZnO material is made to receive increasing concern at ultraviolet short wavelength field of photoelectric devices.ZnO is direct wide bandgap semiconductor materials, and under room temperature, energy gap is 3.37eV, and exciton bind energy is 60meV, is the ideal material of preparation room temperature UV laser diode, luminous tube.Compared with GaN material, ZnO has higher fusing point, higher exciton bind energy, lower epitaxial growth temperature and preparation cost, and it is easy to etching simultaneously, and the rear road processing of chip is more prone to.Therefore, zno-based laser, luminous tube etc. are succeeded in developing and are likely replaced or part replacement GaN base photoelectric device, will have larger application prospect.
Because ZnO film has the stronger gain of light and higher refractive index, it is made to have obvious advantage preparing in ultraviolet accidental laser.In random gain media, the research of laser phenomenon experienced by the history of more than 30 year, in this field, the stimulated radiation phenomenon that the people such as H.Cao observe in ZnO semiconductor random medium (H.Cao, Y.G.Zhao, H.C.Ong of greatest concern, S.T.Ho, J.Y.Dai, J.Y.Wu, and R.P.H.Chang, Appl.Phys.Lett.73,3656(1998)).In recent years, some research groups successfully achieve optical pumping stimulated emission phenomenon in ZnO nano-structure in the world, and the laser characteristics with the annular chamber of phenomenological theoretical well explain in random medium.But what want to make ZnO Random Laser device real is practical, its maximum challenge will realize effective electric pump Random Laser to export.
At present, people to be devoted to realize extensive silicon based opto-electronics integrated.Obviously, if the electric pump Random Laser device of silica-based ZnO film can be realized, have broad application prospects undoubtedly.The people such as X.Y.Ma in 2007 utilize MIM element (MOS) structure, and N-shaped silicon has prepared Au/SiO x/ ZnO MOS device, successfully achieves the electric pumping random hot shot (X.Y.Ma, P.L.Chen, D.S.Li, Y.Y.Zhang, and D.R.Yang, Appl.Phys.Lett.90,231106(2007) of ZnO film).The people such as Y.Tian in 2010 utilize MOS structure on N-shaped silicon, prepared Au/MgZnO/ZnO Random Laser device (Y.Tian, X.Y.Ma, L.Jin, and D.R.Yang, Appl.Phys.Lett.97,251115(2010) equally).But for the Random Laser device of this type structure, owing to not having suitable carrier confinement mechanism, its threshold current has exceeded 50mA.So high threshold current will produce serious heating effect in the devices, causes the drift of excitation wavelength, and even make the sharp phenomenon of penetrating of device stop, these steady operations for laser are very disadvantageous.So it is vital for realizing the stable output of ZnO Random Laser device under Low threshold condition, this is also one of important research topic of following zno-based Random Laser device one.
Summary of the invention
Object of the present invention is exactly for solving above-mentioned zno-based Laser Devices threshold current this problem high, the structure of patterned carrier confining layer to device is utilized to improve, technology of preparing comparative maturity, technique is simple, with the silicon device process compatible of existing maturation, low-threshold power can be realized and flow down stable Random Laser output.
Technical scheme of the present invention is:
A kind of novel silicon substrate zno-based low-threshold power pumping Random Laser device designed by the present invention (illustrating see accompanying drawing 1 and accompanying drawing), its chip to be shown in embodiment 14 by the concrete preparation method of ZnO luminescent layer 3(of the ohmic electrode layer 6 of silicon substrate backside deposition, silicon substrate 1, nearly intrinsic successively), the concrete preparation method of MgZnO electron injecting layer 4(of N-shaped to be shown in embodiment 1 4) and translucent Au electrode form; MgZnO film both as electron injecting layer, again as radiative transparent window layer; It is characterized in that, between silicon substrate 1 and the ZnO luminescent layer 3 of nearly intrinsic, introduce the SiO with circular window array 7 2current-limiting layer 2, the use of this limiting layer can reduce the threshold current of Laser Devices effectively; Translucent Au electrode is square electrode array 5, the center of each square electrode and SiO 2on current-limiting layer 2, the center of circular window is corresponding.
A preparation method for novel silicon substrate zno-based low-threshold power pumping Random Laser device as elucidated before, its step is as follows:
(1) SiO is prepared on a surface of silicon substrate 1 after cleaning 2current-limiting layer 2;
(2) adopt photoetching corrosion or photoresist stripping process at SiO 2circular window array 7 prepared by current-limiting layer 2;
(3) adopt mocvd method at the SiO with circular window array 7 2the ZnO luminescent layer 3 of the nearly intrinsic of current-limiting layer 2 Epitaxial growth and the MgZnO electron injecting layer 4 of N-shaped;
(4) thermal evaporation and tungsten filament mask technique is adopted on the MgZnO electron injecting layer 4 of N-shaped, to prepare square translucent Au electrod-array 5, the center of each square electrode and SiO 2on current-limiting layer 2, the center of circular window is corresponding, the silicon substrate 1 backside deposition ohmic contact Al electrode 6 then after polishing, thus obtains silicon substrate zno-based low-threshold power pumping Random Laser device of the present invention.
In step (1), SiO 2the preparation method of current-limiting layer 2 can be the methods such as dry-oxygen oxidation method, magnetron sputtering method or electron beam evaporation, preferred SiO 2the resistivity of current-limiting layer 2 is 10 13~ 10 15ohmcm.
In step (2), circular window place SiO 2the thickness of current-limiting layer is preferably 5 ~ 15 nanometers, other region SiO 2the thickness of current-limiting layer is preferably 90 ~ 120 nanometers.Under preferred current limit layer thickness, be both conducive to electronics at SiO 2the accumulation of/ZnO interface, is conducive to again holoe carrier and enters ZnO layer from silicon side tunnelling.SiO 2the radius of current limit window is preferably 30 ~ 80 microns, usually, and the SiO of relatively large radius 2window is unfavorable to the horizontal proliferation of limiting carrier in ZnO luminescent layer 3, and the SiO of small radii 2window reduces effective light emitting area of luminescent device, have impact on the light output efficiency of device.
In step (3), the ZnO luminescent layer 3 of described nearly intrinsic and the MgZnO electron injecting layer 4 of N-shaped can adopt that MOCVD method is disposable in single cavity to be completed, and the simple manufacturing cycle of technique is short, decreases the material contamination in device fabrication process.The thickness of ZnO luminescent layer 3 is preferably 60 ~ 110 nanometers, and the thickness of MgZnO electron injecting layer 4 is preferably 300 ~ 600 nanometers, and growth temperature is preferably 650 ~ 700 degrees Celsius.
In step (4), in the preparation process of Au electrod-array 5, tungsten filament mask technique is adopted to obtain electrod-array, the shape of each electrode unit to be the length of side the be square of 400 ~ 450 microns, distance between adjacent electrode is 50 ~ 90 microns, corresponding with current limit the window's position below; The thickness of Au electrod-array 5 is 20 ~ 40 nanometers; The thickness of ohmic contact Al electrode 6 is 80 ~ 120 nanometers.
Effect of the present invention and benefit: the present invention utilizes patterned SiO 2current-limiting layer overcomes the higher shortcoming of conventional laser threshold current, is easy to the preparation obtaining Low threshold Random Laser device.The silicon device process compatible of the inventive method and existing maturation, is conducive to the large area preparation of device, reduces costs move towards practical and have very important significance ZnO accidental laser.
Accompanying drawing explanation
Fig. 1: the structural representation of electric pump Random Laser device of the present invention;
Fig. 2: circular window SiO of the present invention 2the structural representation of current-limiting layer;
Fig. 3: for the electron scanning micrograph of the ZnO film of luminescent layer described in embodiment 1;
Fig. 4: adopt the square shaped mask plate structure schematic diagram that tungsten filament makes;
Fig. 5: the structural representation of device individual devices unit prepared by the present invention;
Fig. 6: the current distribution pattern schematic diagram of device individual devices unit prepared by the present invention;
Fig. 7: the stimulated emission spectrum of prepared device under different electric current in embodiment 1;
Fig. 8: in embodiment 1, prepared device luminous intensity is with the relation curve of Injection Current;
Fig. 9: heterojunction structure energy band diagram under forward bias (in Fig. 9 a, backing material is p-type silicon, and in Fig. 9 b, backing material is N-shaped silicon).
Component names in figure: 1 is substrate, and 2 is patterned SiO 2current-limiting layer, 3 is nearly intrinsic ZnO luminescent layer, and 4 is the MgZnO electron injecting layer of N-shaped, and 5 is translucent Au electrod-array, and 6 is the Ohm contact electrode of substrate back, and 7 is circular window array, and 8 is tungsten filament.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with technical scheme and accompanying drawing.
Embodiment 1:
1) adopt commercial p-type silicon chip as substrate 1, carried out chemical cleaning, the steps include: in mass concentration to be soak 10 seconds in the hydrofluoric acid solution of 10%, to remove the natural oxidizing layer of surface of silicon, repeatedly clean with deionized water after taking-up; Then use each ultrasonic cleaning of toluene, acetone and ethanolic solution 5 minutes successively, recirculation once; After clean with deionized water rinsing afterwards, for subsequent use after high pure nitrogen dries up.
2) silicon substrate 1 after cleaning is put into high temperature process furnances, silicon surface oxidation process is carried out under oxygen atmosphere, in oxidizing process, the flow of high purity oxygen gas is 500sccm, in tube furnace, invariablenes pressure of liquid is 1 atmospheric pressure, under the reaction condition of 1060 degrees Celsius, the SiO of 110 nanometer thickness within 20 minutes, can be obtained 2film is as current-limiting layer, and its resistivity is 5.0 × 10 14ohmcm.In order to next carry out the preparation of rear-face contact electrode to silicon substrate 1, by the method for mechanical polishing to the SiO at silicon substrate 1 back side 2layer carries out polishing, is come out by silicon substrate.
3) in order to SiO 2film carries out graphical treatment, adopt positive glue BP212 as mask, with ultraviolet photolithographic machine, (ultraviolet wavelength is 365 nanometers, power is 350 watts, photolithography plate used there is the circular array of periodic arrangement, radius of a circle is 50 microns, and between adjacent circular, the distance of transverse and longitudinal is 500 microns) sample is exposed, the time for exposure is 3 minutes.It is then the NaOH solution (NaOH: H of 0.5% by mass concentration 2wet etching carried out to sample exposure after, the BP212 photoresist that be exposed region is removed, expose SiO O=1g: 200g) 2film, thus a series of circular window is obtained on BP212 photoresist.In order to strengthen the corrosion resistance of unexposed area BP212 photoresist, sample being put into baking oven and carries out firmly treatment, temperature is 85 degrees Celsius, and the time is 15 minutes.And then with the etchant solution (28 milliliters of hydrofluoric acid+170 ml deionized water+113 grams of ammonium fluorides) configured to SiO 2layer carries out corrosion treatment, and etching time is 50 seconds.Then the sample after corrosion is put into acetone soln, to remove the BP212 photoresist of unexposed area.The acetone residue liquid of sample surfaces is then removed with ethanolic solution, cleaner with deionized water rinsing, finally at SiO 2layer obtains the circular window array 7 of periodic arrangement.The radius of window is 50 microns, and between window, the distance of transverse and longitudinal is 500 microns, and the window degree of depth is 100 nanometers.Other region SiO 2the thickness of layer is constant, remains 110 nanometers, thus prepares patterned SiO 2current-limiting layer 2, Fig. 2 is graphical SiO 2the structural representation of current-limiting layer 2.
4) and then adopt MOCVD method, the special growth MOCVD device of the ZnO film described in ZL02100436.6 ZL200410011164.0 patent is particularly used, at patterned SiO 2epitaxial growth of ZnO luminescent layer 3 and MgZnO electron injecting layer 4 successively on current-limiting layer 2.The thickness of ZnO luminescent layer 3 and MgZnO electron injecting layer 4 is 90 nanometers and 400 nanometers.In order to obtain ZnO nano column structure, growth temperature is 680 degrees Celsius, and reaction pressure is 110 Pascals, and growth time is 30 minutes.In order to obtain the ZnO film of nearly intrinsic, increasing oxygen source flow suitable in growth course, which reduces the alms giver's type flaw (zinc gap and Lacking oxygen) existed in ZnO film, thus reduces the carrier concentration of ZnO film, obtain the ZnO of nearly intrinsic, its electron concentration is 1.6 × 10 16cm -3.In MgZnO film preparation process, adopting trimethyl gallium as doped source, realizing its N-shaped conduction by mixing a small amount of gallium.Gallium in a steady stream bottle temperature is set to-10 degrees Celsius, and carrier gas flux is 0.5sccm, and the output molal quantity in gallium source per minute is 0.06 micromole, and the electron concentration of prepared N-shaped MgZnO film is 2.1 × 10 19cm -3.Fig. 3 is the electron scanning micrograph of the ZnO film for luminescent layer.
5) adopt thermal evaporation and tungsten filament mask technique at the square translucent Au electrod-array 5 of MgZnO electron injecting layer 4 surface preparation, at silicon substrate 1 backside deposition ohmic contact Al electrode 6.In order to improve Au electrode 5 to radiative transmitance, its THICKNESS CONTROL is 30 nanometers.In Au electrode 5 preparation process, the special mask plate that we adopt tungsten filament 8 to make obtains regular electrode pattern, and the figure of mask plate is for shown in Fig. 4, and the shape of each electrode unit to be the length of side the be square of 430 microns, corresponding to the SiO below it 2circular window.In this technique, be made into special mask plate figure with commercially available tungsten filament 8, the diameter of tungsten filament 8 used is 70 microns.Anyhow the tungsten filament right-angled intersection arrangement in direction, is built into the quadrate array of uniform-dimension.Before thermal evaporation Au, sample strip is placed in below mask plate, makes SiO 2circular window array 7 and the square shaped cells one_to_one corresponding on mask plate, utilize the obtained foursquare Au electrode 6 of the effect of blocking of tungsten filament 8.Silicon substrate 1 backside deposition Ohm contact electrode selects metal A l, and being 1 millimeter by a diameter, length is that the aluminum strip of 1 centimetre puts into tungsten boat, is 6.0 × 10 in back end vacuum degree -4carry out thermal evaporation during handkerchief, evaporation rate is that 0.5 nanometer is per second, and the thickness of metal A l is 100 nanometers.
Embodiment 2:
1) adopt commercial p-type silicon chip as substrate 1, carried out chemical cleaning, the steps include: in mass concentration to be soak 10 seconds in the hydrofluoric acid solution of 10%, to remove the natural oxidizing layer of surface of silicon, repeatedly clean with deionized water after taking-up; Then use each ultrasonic cleaning of toluene, acetone and ethanolic solution 5 minutes successively, recirculation once; After clean with deionized water rinsing afterwards, for subsequent use after high pure nitrogen dries up.
2) silicon substrate 1 after cleaning is put into high temperature process furnances, under oxygen atmosphere, carry out silicon surface oxidation process, in oxidizing process, the flow of high purity oxygen gas is 500sccm, and in tube furnace, invariablenes pressure of liquid is 1 atmospheric pressure, under the reaction condition of 1060 degrees Celsius, the SiO of 10 nanometer thickness within 1 minute, can be obtained 2film.Its resistivity is 5.5 × 10 14ohmcm.In order to next carry out the preparation of rear-face contact electrode to silicon substrate 1, by the method for mechanical polishing to the SiO at silicon substrate 1 back side 2layer carries out polishing, is come out by silicon substrate.
3) by sol evenning machine, negative glue SU-8 is spin-coated on containing 10 Nano-meter SiO_2 2on the silicon substrate 1 of film.In order to carry out precuring process to SU-8, sample being put into baking oven and toasts, temperature is 90 degrees Celsius, and the time is 20 minutes.Then (ultraviolet wavelength is 365 nanometers to carry out uv-exposure with photolithography plate to SU-8 glue, power is 350 watts, photolithography plate used has the circular array of periodic arrangement, and radius of a circle is 50 microns, between adjacent circular, the distance of transverse and longitudinal is 500 microns), the time for exposure is 5 minutes.Developed by the PGMEA developer solution that sample after exposure puts into SU-8 special, to remove the SU-8 glue of unexposed area, developing time is 40 seconds, cleaner with deionized water rinsing, thus on SU-8 glue, obtain the cylindrical structure of a series of blocking.The radius of circular columns is 50 microns, and the distance of adjacent circular post transverse and longitudinal is 500 microns.
4) on patterned SU-8 glue, the SiO of one deck 100 nanometer thickness is deposited by electron beam evaporation technique 2layer, depositing temperature is 50 degrees Celsius, and sedimentation time is 30 minutes.Then sample is put into aqueous isopropanol to remove the SU-8 glue of non-developing regional, cleaner with deionized water rinsing, thus obtain the SiO that one deck has circular window array 7 2film.Fig. 2 is graphical SiO 2the structural representation of current-limiting layer 2.
5) and then adopt MOCVD method, particularly use the special growth of the ZnO film described in No. 02100436.6 ZL200410011164.0 patent MOCVD device at patterned SiO 2extension ZnO luminescent layer 3 and MgZnO electron injecting layer 4 successively on current-limiting layer 2.The thickness of ZnO luminescent layer 3 and MgZnO electron injecting layer 4 is 90 nanometers and 400 nanometers.In order to obtain ZnO nano column structure, growth temperature is 680 degrees Celsius, and reaction pressure is 110 Pascals, and growth time is 30 minutes.Nearly intrinsic ZnO is obtained identical with embodiment 1 with the method for N-shaped MgZnO film in the present embodiment.
6) thermal evaporation and tungsten filament mask technique is adopted to prepare special translucent Au electrode 5, at silicon substrate 1 backside deposition ohmic contact Al electrode 6 on MgZnO film 4 surface.The technical process of this part is identical with embodiment 1 with preparation parameter.
This example and embodiment 1 difference be, SiO 2current-limiting layer 2 needs employing two kinds of methods jointly to prepare, and its critical process utilizes photoresist lift off technology directly to obtain SiO 2circular window array 7, which reduces in embodiment 1 SiO 2the corrosion process of film.
Embodiment 3:
This example and embodiment 1 difference choose commercial n-type silicon chip as backing material, obtained the SiO of 110 nanometers by the dry-oxygen oxidation processes of 25 minutes 2film, other processing step is all with embodiment 1.The feature of the present embodiment is that device is different in the generation mechanism of holoe carrier and embodiment 1 under forward bias.Adopt N-shaped silicon substrate, under higher forward bias, being with of Si can at Si/SiO 2interface bends, thus causes at close Si/SiO 2inversion layer is there is in one section of region that interface is very thin.This inversion layer provides hole for the recombination process of charge carrier in device.
Fig. 5 is the structural representation of prepared device individual devices unit, and Fig. 6 is the current distribution pattern of individual devices unit in device test procedures, due to the SiO of particular design 2current-limiting layer 2, injects charge carrier and is effectively suppressed in the horizontal proliferation of ZnO luminescent layer 3, thus reduce the operating current of device; The threshold current of accidental laser prepared by the method is 3.9 milliamperes.
Fig. 7 is the electroluminescence spectrum under the device different driving electric current in embodiment 1, the positive pole of the Au Electrode connection DC power supply now in device, the Al Electrode connection negative pole at the silicon substrate back side.As we can see from the figure, being 3.6 MAHs at forward current, there is some sharp-pointed glow peaks in luminous spectrum in UV light region.Further, along with the increase of Injection Current, the intensity of glow peak strengthens gradually, and the number of glow peak starts to increase, luminous peak-to-peak spacing not etc., this illustrate device occurred under forward bias random to swash penetrate phenomenon.
Fig. 8 is the relation curve of Output optical power with Injection Current of prepared device in embodiment 1, along with the increase of Injection Current, there is obvious non-linear growth process in the Output optical power be detected, there occurs the transformation of spontaneous radiation to stimulated radiation, this illustrates the amplification process achieving optical mode in the devices, and the threshold current that can obtain device from this relation curve is 3.9 milliamperes.
Fig. 9 (a) is heterojunction structure p-Si/SiO in embodiment 1,2 2/ i-ZnO/n-MgZnO band structure schematic diagram under forward bias, as we can see from the figure, device is close SiO under enough large forward bias 2being with of/ZnO interface bends, and electronics is injected into the conduction band of ZnO from MgZnO layer, and accumulates in the region that conduction band is bending; Meanwhile, hole enters into the bending region of ZnO valence band from the valence band of silicon substrate by tunneling effect.Fig. 9 (b) is heterojunction structure n-Si/SiO in embodiment 3 2/ i-ZnO/n-MgZnO band structure schematic diagram under forward bias.Under higher forward bias, near Si/SiO 2occur inversion layer in one section of region that interface is very thin, this inversion layer provides hole for the recombination process of charge carrier in device.

Claims (7)

1. a silicon substrate zno-based low-threshold power pumping Random Laser device, its chip comprises ohmic electrode layer (6), the silicon substrate (1), closely the ZnO luminescent layer (3) of intrinsic, the MgZnO electron injecting layer (4) of N-shaped and translucent Au electrode of silicon substrate backside deposition successively; It is characterized in that, between silicon substrate (1) and the ZnO luminescent layer (3) of nearly intrinsic, introduce the SiO with circular window array (7) 2current-limiting layer (2); Translucent Au electrode is square electrode array (5), the center of each square electrode and SiO 2the center of the upper circular window of current-limiting layer (2) is corresponding.
2. a kind of silicon substrate zno-based low-threshold power pumping Random Laser device as claimed in claim 1, is characterized in that: circular window array (7) place SiO 2the thickness of current-limiting layer (2) is 5 ~ 15 nanometers, other region SiO 2the thickness of current-limiting layer (2) is 90 ~ 120 nanometers, and the radius of circular window array (7) is 30 ~ 80 microns.
3. a kind of silicon substrate zno-based low-threshold power pumping Random Laser device as claimed in claim 1, it is characterized in that: the thickness of ZnO luminescent layer (3) is 60 ~ 110 nanometers, the thickness of MgZnO electron injecting layer (4) is 300 ~ 600 nanometers.
4. a kind of silicon substrate zno-based low-threshold power pumping Random Laser device as claimed in claim 1, it is characterized in that: the shape of each electrode unit to be the length of side the be square of 400 ~ 450 microns, distance between adjacent electrode is 50 ~ 90 microns, corresponding with current limit the window's position below; The thickness of Au electrod-array (5) is 20 ~ 40 nanometers; The thickness of ohmic contact Al electrode (6) is 80 ~ 120 nanometers.
5. the preparation method of silicon substrate zno-based low-threshold power pumping Random Laser device according to claim 1, its step is as follows:
(1) SiO is prepared on a surface of silicon substrate (1) after cleaning 2current-limiting layer (2);
(2) adopt photoetching corrosion or photoresist stripping process at SiO 2circular window array (7) prepared by current-limiting layer (2);
(3) adopt mocvd method at the SiO with circular window array (7) 2the ZnO luminescent layer (3) of the nearly intrinsic of current-limiting layer (2) Epitaxial growth and the MgZnO electron injecting layer (4) of N-shaped;
(4) thermal evaporation and tungsten filament mask technique is adopted above to prepare square translucent Au electrod-array (5), the center of each square electrode and SiO at the MgZnO electron injecting layer (4) of N-shaped 2the center of the upper circular window of current-limiting layer (2) is corresponding, the backside deposition ohmic contact Al electrode (6) of the silicon substrate (1) then after polishing, thus obtain silicon substrate zno-based low-threshold power pumping Random Laser device.
6. the preparation method of silicon substrate zno-based low-threshold power pumping Random Laser device according to claim 5, is characterized in that: SiO in step (2) 2the preparation of current-limiting layer (2) is dry-oxygen oxidation method, magnetron sputtering method or electron-beam vapor deposition method, SiO 2the resistivity of current-limiting layer (2) is 10 13~ 10 15ohmcm.
7. the preparation method of silicon substrate zno-based low-threshold power pumping Random Laser device according to claim 5, it is characterized in that: in step (3), the MgZnO electron injecting layer (4) of the ZnO luminescent layer (3) of nearly intrinsic and N-shaped adopts that MOCVD method is disposable in single cavity to be completed, and growth temperature is 650 ~ 700 degrees Celsius.
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