CN109546527B - Field electron beam pumping ultraviolet light source - Google Patents

Field electron beam pumping ultraviolet light source Download PDF

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Publication number
CN109546527B
CN109546527B CN201811405854.2A CN201811405854A CN109546527B CN 109546527 B CN109546527 B CN 109546527B CN 201811405854 A CN201811405854 A CN 201811405854A CN 109546527 B CN109546527 B CN 109546527B
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electrode
electron beam
light source
ultraviolet light
field emission
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CN109546527A (en
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陈一仁
宋航
张志伟
缪国庆
蒋红
李志明
孙晓娟
黎大兵
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure

Abstract

The invention discloses a field electron beam pumping ultraviolet light source, wherein a field emission electron source comprises a first electrode, a second electrode, an n-type GaN semiconductor layer, a field emission cathode array and a first power supply; the epitaxial layer of the field emission electron source is sequentially provided with the second AlN buffer layer and the n-type GaN semiconductor layer from the sapphire substrate to the outside; the first electrode and the second electrode are arranged on the same surface of the n-type GaN semiconductor layer, a gap is formed between the first electrode and the second electrode, and the first electrode is not in direct contact with the second electrode; the field emission cathode array is arranged in the gap and is in contact with the n-type GaN semiconductor layer; the field emission cathode is a field emission cathode with ultraviolet photosensitive characteristics; the first electrode and the second electrode are respectively connected to the positive electrode and the negative electrode of a first power supply. The invention improves the luminous power of the field electron beam pumping ultraviolet light source.

Description

Field electron beam pumping ultraviolet light source
Technical Field
The invention relates to the field of semiconductor light-emitting devices, in particular to a field electron beam pumping ultraviolet light source.
Background
With the development of science and technology, ultraviolet light sources have been widely used in the fields of national economy and national defense construction, such as sterilization and disinfection, water purification, microelectronic lithography and surface modification, biotechnology and biochemical medical treatment, non-line-of-sight confidential optical communication, and the like.
Most of the existing ultraviolet light sources are mercury lamps or electric injection type ultraviolet light emitting diodes developed based on AlGaN materials, but they have respective problems, and in order to overcome the problems, electron beam pumping ultraviolet light sources based on AlGaN materials are proposed, and the electron beam pumping mode for realizing AlGaN semiconductor ultraviolet light emission has the following advantages: the pumping object is not limited by the type and doping type of the semiconductor material, and can be intrinsic, doped single-layer or multi-layer material, and can also be semiconductor material with a low-dimensional structure. The semiconductor material is bombarded by high-energy electron beams as a target, so that the semiconductor material has high carrier gain, and the carrier transition speed is high and the probability is high; the action depth of the high-energy electron beam exceeds that of the traditional electric injection type, and higher optical output power can be obtained by increasing the thickness of an active layer of the semiconductor device. Therefore, the electron beam pumping mode creates good opportunity and wide technical space for improving the external quantum efficiency of the AlGaN semiconductor ultraviolet LED device and realizing high-power output.
However, the technology of realizing the ultraviolet light source based on the pumping of the field emission electron source is still in the primary stage, the most important problem is that the luminous power is low and difficult to improve, and the root cause of the problem is that the current density of the field emission electron source for realizing the ultraviolet light source based on the pumping of the field emission electron source is small and difficult to improve.
Disclosure of Invention
The invention aims to provide a field electron beam pumping ultraviolet light source to solve the problem that the field emission electron source in the prior art has low current density and low luminous power.
In order to solve the technical problem, the invention provides a field electron beam pumping ultraviolet light source, wherein a field emission electron source comprises a first electrode, a second electrode, an n-type GaN semiconductor layer, a field emission cathode array and a first power supply;
the epitaxial layer of the field emission electron source is sequentially provided with the second AlN buffer layer and the n-type GaN semiconductor layer from the sapphire substrate to the outside;
the first electrode and the second electrode are arranged on the same surface of the n-type GaN semiconductor layer, a gap is formed between the first electrode and the second electrode, and the first electrode is not in direct contact with the second electrode;
the dielectric isolation layer is arranged on the surfaces of the first electrode and the second electrode, and the dielectric isolation layer is a layer with an opening, and the opening corresponds to the gap;
the metal grid is arranged on the surface of the dielectric isolation layer and is a metal grid with an opening, and the opening corresponds to the gap;
the field emission cathode array is arranged in the gap and is in contact with the n-type GaN semiconductor layer;
the field emission cathode is a field emission cathode with ultraviolet photosensitive characteristics;
the first electrode and the second electrode are respectively connected to the positive electrode and the negative electrode of a first power supply.
Optionally, in the above field electron beam pumping ultraviolet light source, the first electrode and the second electrode are comb-shaped or finger-shaped electrodes with periodic patterns in their surfaces;
the first electrode and the second electrode form a group of interdigital electrodes.
Optionally, in the above field electron beam pumped ultraviolet light source, the inter-finger distance of the interdigital electrode is in a range of 5 to 10 micrometers, inclusive.
Optionally, in the above field electron beam pumped ultraviolet light source, the finger width of the interdigital electrode is in a range of 5 to 10 micrometers, inclusive.
Optionally, in the above field electron beam pumped ultraviolet light source, the finger length of the interdigital electrode ranges from 100 micrometers to 300 micrometers, inclusive.
Optionally, in the field electron beam pumping ultraviolet light source, the field emission cathode array is an array formed by one-dimensional nano-columns.
Optionally, in the above field electron beam pumped ultraviolet light source, the diameter of the one-dimensional nanopillar ranges from 30 nm to 100 nm, inclusive.
Optionally, in the above field electron beam pumped ultraviolet light source, the height of the one-dimensional nanopillar ranges from 100 nm to 500 nm, inclusive.
Optionally, in the field electron beam pumping ultraviolet light source, the pumping material of the field electron beam pumping ultraviolet light source further includes a mesh metal electrode, the mesh metal electrode is disposed on a surface of a pumping object layer of the pumping material, and the mesh metal electrode is disposed in contact with an isolation column of the field electron beam pumping ultraviolet light source;
the reticular metal electrode comprises a reticular metal electrode leading-out end.
Optionally, in the above field electron beam pumped uv source, the metal grid of the field electron beam pumped uv source has a thickness ranging from 100 nm to 500 nm, inclusive.
The field emission electron source comprises a first electrode, a second electrode, an n-type GaN semiconductor layer, a field emission cathode array and a first power supply; the epitaxial layer of the field emission electron source is sequentially provided with the second AlN buffer layer and the n-type GaN semiconductor layer from the sapphire substrate to the outside; the first electrode and the second electrode are arranged on the same surface of the n-type GaN semiconductor layer, a gap is formed between the first electrode and the second electrode, and the first electrode is not in direct contact with the second electrode; the dielectric isolation layer is arranged on the surfaces of the first electrode and the second electrode, and the dielectric isolation layer is a layer with an opening, and the opening corresponds to the gap; the metal grid is arranged on the surface of the dielectric isolation layer and is a metal grid with an opening, and the opening corresponds to the gap; the field emission cathode array is arranged in the gap and is in contact with the n-type GaN semiconductor layer; the field emission cathode is a field emission cathode with ultraviolet photosensitive characteristics; the first electrode and the second electrode are respectively connected to the positive electrode and the negative electrode of a first power supply. When the field electron beam pumping ultraviolet light source works, the generated light is not highly concentrated and is emitted towards the light emitting surface in a directional way, and some light can be repeatedly reflected in the cavity of the field electron beam pumping ultraviolet light source and is finally consumed, the invention improves the field emission cathode in the prior art into the field emission cathode with ultraviolet photosensitive characteristic, so that the field emission cathode can absorb the light which can not exit the element, exciting free carriers, dividing the electrode of the field emission electron source into two non-contact electrodes, applying voltage between the two electrodes to make the field emission cathode array in a directional electric field, the current carriers are forced to move directionally to form current, the current density of the field emission electron source is increased, and the luminous power of the field electron beam pumping ultraviolet light source is further improved.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic view of a partial structure of a field electron beam pumped UV light source in the prior art;
FIG. 2 is a partial schematic view of one embodiment of a field electron beam pumped UV light source according to the present invention;
FIG. 3 is a schematic structural diagram of a first electrode and a second electrode of another embodiment of the field electron beam pumped UV light source provided by the present invention;
FIG. 4 is a schematic structural diagram of another embodiment of a field electron beam pumped UV light source provided by the present invention;
FIG. 5 is a schematic structural diagram of a mesh-shaped metal electrode according to yet another embodiment of the field electron beam pumped UV light source provided by the present invention;
FIG. 6 is a comparison of the luminance of a blue-emitting phosphor excited by a field emission electron beam pumped UV light source according to one embodiment of the present invention (right) with the luminance of a blue-emitting phosphor excited by a conventional field emission electron beam pumped UV light source (left);
fig. 7 is a schematic diagram of the current density of the electron source when a voltage is applied between the first electrode and the second electrode and when no voltage is applied, according to an embodiment of the field electron beam pumped ultraviolet light source provided by the present invention.
Detailed Description
The traditional ultraviolet light source is represented by a mercury lamp, but the portability is poor, the luminous efficiency is low, the heavy metal environmental pollution and other insufficient factors drive people to seek a high-efficiency environment-friendly ultraviolet light source as a substitute, so that an electric injection type ultraviolet Light Emitting Diode (LED) based on a III group nitride semiconductor material, mainly based on the development of an AlGaN material, is produced.
Compared with the traditional ultraviolet light source, the electric injection type ultraviolet LED has the advantages of small volume, long service life, environmental friendliness, high expected efficiency and the like, and is concerned. However, a key factor that restricts the development of the electron injection type AlGaN semiconductor ultraviolet LED device is that the External Quantum Efficiency (EQE) is extremely low. Although the internal quantum efficiency of group iii nitride semiconductor ultraviolet LED devices has been increasing in recent years, the External Quantum Efficiency (EQE) thereof cannot be effectively improved due to the constraints of Carrier Injection Efficiency (CIE) and Light Extraction Efficiency (LEE) in AlGaN materials. This can be confirmed from the results of previous studies, which show that the internal quantum efficiency (EQE) of 280nm AlGaN uv LEDs at room temperature can reach 70%, but the External Quantum Efficiency (EQE) can only reach 3% (j.appl.phys.105,073103,2009 and appl.phys.express 3,061004,2010). At present, the improvement of the light extraction efficiency is realized by increasing a distributed Bragg reflector, introducing a patterned substrate micro lens, regulating and controlling a surface plasmon optical field and the like, and a certain effect is also obtained. In fact, however, a key factor determining the external quantum efficiency of group iii nitride semiconductor ultraviolet LED devices is the Carrier Injection Efficiency (CIE), especially the hole injection capability. Because p-type AlGaN is difficult to obtain high hole carrier concentration, high hole mobility is one of the sources that have been restricting the development of group iii nitride semiconductor ultraviolet LED devices. On one hand, the forbidden bandwidth of the ternary alloy AlGaN increases along with the increase of Al components, the larger the forbidden bandwidth is, the larger the activation energy of the Mg acceptor in the p-type AlGaN material is, and the larger the activation energy of the Mg acceptor in the GaN isThe activation energy is up to 160meV, while the Mg acceptor activation energy in AlN is up to 630meV, so that the difficulty of generating holes by ionization of Mg impurities in AlGaN is more and more increased; on the other hand, Mg impurity atoms and H atoms in the growth environment form a complex to be passivated, the effective activation rate is low, and researches report that the Mg-doped impurity concentration is 1019/cm3Has a hole concentration of only 2 × 10 after activation10/cm3. Secondly, the AlGaN material lacks a homogeneous substrate, and the AlGaN material obtained by the mainstream heteroepitaxy technology has high-density dislocations, and the dislocations play a role of a non-radiative recombination center in the working process of the electric injection type AlGaN semiconductor ultraviolet LED device and can also consume a large amount of carriers in the form of heat generation.
Aiming at various problems of the electric injection type ultraviolet LED, an electric excitation technology of field electron beam pumping is provided so as to overcome the problem of low external quantum efficiency of an electric injection type AlGaN semiconductor ultraviolet LED device. In the prior art, a field electron beam pumping ultraviolet LED is integrally divided into a field emission electron source, a pumping material, an isolation column, a vacuum shell and an external bias source, wherein the pumping material sequentially comprises a light-emitting window and a pumping object layer from top to bottom; the field emission electron source comprises a metal grid, a dielectric isolation layer, a field emission cathode array, a metal electrode, an N-type GaN semiconductor layer, an AlN buffer layer and a substrate from top to bottom in sequence; the external bias voltage source is divided into two sources, one is connected to the metal grid and the metal electrode, and the other is connected to the metal electrode and the pumping object layer, and a partial structure schematic diagram of the field electron beam pumping ultraviolet LED in the prior art is shown in fig. 1.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the present invention is to provide a field electron beam pumping ultraviolet light source, a partial structure schematic diagram of a first embodiment of the present invention is shown in fig. 2, the field electron beam pumping ultraviolet light source comprises a field emission electron source and a first power supply 33; the field emission electron source comprises a first electrode 82, a second electrode 83, an n-type GaN semiconductor layer 84, a field emission cathode array 81 and a first power supply 33;
the epitaxial layer of the field emission electron source 11 is composed of the second AlN buffer layer 85 and the n-type GaN semiconductor layer 84 in this order from the sapphire substrate 86 to the outside;
the first electrode 82 and the second electrode 83 are disposed on the same surface of the n-type GaN semiconductor layer 84, a gap is formed between the first electrode 82 and the second electrode 83, and the first electrode 82 and the second electrode 83 are not in direct contact;
the dielectric isolation layer 7 is disposed on the surfaces of the first electrode 82 and the second electrode 83, and the dielectric isolation layer 7 is a layer having an opening corresponding to the gap;
the metal grid 6 is arranged on the surface of the dielectric isolation layer 7, and the metal grid 6 is a metal grid with an opening, and the opening corresponds to the gap;
the field emission cathode array 81 is disposed in the gap, and the field emission cathode array 81 is disposed in contact with the n-type GaN semiconductor layer 84;
the field emission cathode array 81 is a field emission cathode array 81 with ultraviolet photosensitive characteristic;
the first electrode 82 is connected to the negative pole of the first power supply 33, and the second electrode 83 is connected to the positive pole of the first power supply 33.
The field emission cathode includes the field emission cathode array 81, the first electrode 82, the second electrode 83, the n-type GaN semiconductor layer 84, an AlN buffer layer 85, and a substrate 86.
The dielectric isolation layer 7 of the field electron beam pumping ultraviolet light source is a silicon dioxide or silicon nitride film.
The above n-type AlxGa1-xN/AlyGa1-yPotential well of N multi-quantum well active layerLayer of n-AlxGa1-xN has a thickness in a range from 1 nm to 3 nm, inclusive, such as any of 1.0 nm, 2.0 nm, or 3.0 nm; the above n-type AlxGa1-xN/AlyGa1-yBarrier layer N-Al of N multi-quantum well active layeryGa1-yThe thickness of N ranges from 10 nanometers to 20 nanometers, inclusive, such as any of 10.0 nanometers, 15.6 nanometers, or 20.0 nanometers.
The field emission cathode array 81 may be an array of a plurality of one-dimensional nano-pillars, the diameter of the one-dimensional nano-pillars ranges from 30 nm to 100 nm, inclusive, such as any one of 30.0 nm, 66.3 nm, or 100.0 nm; the height of the one-dimensional nanopillars ranges from 100 nm to 500 nm, inclusive, such as any of 100.0 nm, 365.2 nm, or 500.0 nm.
The N-type GAN semiconductor layer 84 of the field electron beam pumping ultraviolet light source is N-type AlxGa1-xN layer of the above N-type AlxGa1-xThe doping concentration of Si of the N layer is in the range of 5 × 1018cm-3To 1 × 1019cm-3Including end points, e.g. 5.0 × 1018cm-3、6.2×1018cm-3Or 1.0 × 1019cm-3Any one of (1); the above n-type AlxGa1-xThe thickness of the N layer ranges from 500 nanometers to 1000 nanometers, inclusive, such as any of 500.0 nanometers, 723.3 nanometers, or 1000.0 nanometers; the one-dimensional nano column is formed on the n-type Al by a hydrothermal methodxGa1-xAnd growing the N layer.
The thickness of the metal grid 6 of the above-mentioned field electron beam pumped uv light source ranges from 100 nm to 500 nm, inclusive, such as any of 100.0 nm, 421.6 nm or 500.0 nm.
The dielectric isolation layer 7 of the field electron beam pumped uv light source has a thickness in a range of 200 nm to 500 nm, inclusive, such as any one of 200.0 nm, 333.3 nm, or 500.0 nm.
The voltage applied by the first power source 33 between the first electrode 82 and the second electrode 83 ranges from 0 volts to 10 volts, inclusive, such as any of 0.0 volts, 5.6 volts, or 10.0 volts.
As a specific embodiment, in this specific embodiment, the positive electrode of the first power supply 33 is connected to the second electrode 83, and the negative electrode of the first power supply 33 is connected to the first electrode 82; the anode of the second power supply 34 of the field electron beam pumping ultraviolet light source is connected with the metal grid 6, and the cathode is connected with the first electrode 82; the anode of the third power source 35 of the field electron beam pumping uv light source is connected to the pumping object layer 3, and the cathode is connected to the second electrode 83.
The field emission electron source 11 comprises a first electrode 82, a second electrode 83, an n-type GaN semiconductor layer 84, a field emission cathode array 81 and a first power supply 33; the epitaxial layer of the field emission electron source 11 is composed of the second AlN buffer layer 85 and the n-type GaN semiconductor layer 84 in this order from the sapphire substrate 86 to the outside; the first electrode 83 and the second electrode 83 are disposed on the same surface of the n-type GaN semiconductor layer 84, a gap is formed between the first electrode 82 and the second electrode 83, and the first electrode 82 and the second electrode 83 are not in direct contact; the dielectric isolation layer 7 is disposed on the surfaces of the first electrode 82 and the second electrode 83, and the dielectric isolation layer 7 is a layer having an opening corresponding to the gap; the metal grid 6 is arranged on the surface of the dielectric isolation layer 7, and the metal grid 6 is a metal grid with an opening, and the opening corresponds to the gap; the field emission cathode array 81 is disposed in the gap, and the field emission cathode array 81 is disposed in contact with the n-type GaN semiconductor layer 84; the field emission cathode 8 is a field emission cathode 8 with ultraviolet photosensitive characteristic; the first electrode 82 and the second electrode 83 are respectively connected to the positive electrode and the negative electrode of the first power supply 33. When the field electron beam pumping ultraviolet light source works, the generated light is not highly concentrated and is emitted towards the light emitting surface in a directional way, and some light can be repeatedly reflected in the cavity of the field electron beam pumping ultraviolet light source and is finally consumed, the present invention improves the field emission cathode 8 of the prior art into a field emission cathode 8 with ultraviolet photosensitive characteristic, so that the field emission cathode can absorb the light which can not exit the element, and exciting free carriers, and dividing the electrode of the field emission electron source 11 into two non-contact electrodes, applying voltage between the two electrodes during operation to make the field emission cathode array 81 in the directional electric field, the carriers are forced to move directionally to form current, so that the current density of the field emission electron source 11 is increased, and the luminous power of the field electron beam pumping ultraviolet light source is further improved.
In addition to the first embodiment, the forms of the first electrode 82 and the second electrode 83 in the above embodiments are limited, and the schematic plan view of the first electrode 82 and the second electrode 83 is shown in fig. 3, and the field electron beam pumping ultraviolet light source includes a field emission electron source and a first power supply 33; the field emission electron source comprises a first electrode 82, a second electrode 83, an n-type GaN semiconductor layer 84, a field emission cathode array 81 and a first power supply 33;
the epitaxial layer of the field emission electron source is composed of the second AlN buffer layer 85 and the n-type GaN semiconductor layer 84 in sequence from the sapphire substrate 86 to the outside;
the first electrode 82 and the second electrode 83 are disposed on the same surface of the n-type GaN semiconductor layer 84, a gap is formed between the first electrode 82 and the second electrode 83, and the first electrode 82 and the second electrode 83 are not in direct contact;
the dielectric isolation layer 7 is disposed on the surfaces of the first electrode 82 and the second electrode 83, and the dielectric isolation layer 7 is a layer having an opening corresponding to the gap;
the metal grid 6 is arranged on the surface of the dielectric isolation layer 7, and the metal grid 6 is a metal grid with an opening, and the opening corresponds to the gap;
the field emission cathode array 81 is disposed in the gap, and the field emission cathode array 81 is disposed in contact with the n-type GaN semiconductor layer 84;
the field emission cathode array 81 is a field emission cathode array 81 with ultraviolet photosensitive characteristic;
the first electrode 82 is connected to the negative pole of the first power supply 33, and the second electrode 83 is connected to the positive pole of the first power supply 33;
the first electrode 82 and the second electrode 83 are comb-shaped or finger-shaped electrodes with periodic patterns in the surface;
the first electrode 82 and the second electrode 83 form a set of interdigital electrodes.
The difference between the present embodiment and the above embodiment is that the first electrode 82 and the second electrode 83 are defined as a pair of interdigital electrodes, which are the same as the above embodiment, and will not be described herein again.
The inter-finger spacing of the interdigitated electrodes ranges from 5 microns to 10 microns, inclusive, such as any of 5.0 microns, 6.0 microns, or 10.0 microns.
The finger width of the interdigitated electrodes described above ranges from 5 microns to 10 microns, inclusive, such as any of 5.0 microns, 7.5 microns, or 10.0 microns.
The finger length of the interdigitated electrodes described above ranges from 100 microns to 300 microns, inclusive, such as any of 100.0 microns, 166.4 microns, or 300.0 microns.
The difference between the present embodiment and the foregoing embodiment is that the first electrode 82 and the second electrode 83 are defined as electrodes that can constitute an interdigital electrode, and the interdigital electrode can greatly increase the perimeter of the first electrode 82 and the second electrode 83, and greatly increase the area of the gap on the premise of ensuring that the width of the gap is within a reasonable range, so that more one-dimensional nano-pillars can be accommodated in the gap, the number of free carriers in the element is increased, and the light emitting efficiency of the field electron beam pumping ultraviolet light source is further improved.
On the basis of the above specific embodiments, a pump material 22 of the field electron beam pumping uv light source is further improved to obtain a third specific embodiment, a schematic structural diagram of which is shown in fig. 4, wherein the field electron beam pumping uv light source includes a field emission electron source 11 and a first power supply 33; the field emission electron source 11 comprises a first electrode 82, a second electrode 83, an n-type GaN semiconductor layer 84, a field emission cathode array 81 and a first power supply 33;
the epitaxial layer of the field emission electron source 11 is composed of the second AlN buffer layer 85 and the n-type GaN semiconductor layer 84 in this order from the sapphire substrate 86 to the outside;
the first electrode 82 and the second electrode 83 are disposed on the same surface of the n-type GaN semiconductor layer 84, a gap is formed between the first electrode 83 and the second electrode 84, and the first electrode 82 and the second electrode 83 are not in direct contact;
the dielectric isolation layer 7 is disposed on the surfaces of the first electrode 82 and the second electrode 83, and the dielectric isolation layer 7 is a layer having an opening corresponding to the gap;
the metal grid 6 is arranged on the surface of the dielectric isolation layer 7, and the metal grid 6 is a metal grid with an opening, and the opening corresponds to the gap;
the field emission cathode array 81 is disposed in the gap, and the field emission cathode array 81 is disposed in contact with the n-type GaN semiconductor layer 84;
the field emission cathode array 81 is a field emission cathode array 81 with ultraviolet photosensitive characteristic;
the first electrode 82 is connected to the negative pole of the first power supply 33, and the second electrode 83 is connected to the positive pole of the first power supply 33;
the first electrode 82 and the second electrode 83 are comb-shaped or finger-shaped electrodes with periodic patterns in the surface;
the first electrode 82 and the second electrode 83 form a group of interdigital electrodes;
the pumping material 22 of the field electron beam pumping ultraviolet light source further comprises a mesh metal electrode 4, the mesh metal electrode 4 is arranged on the surface of the pumping object layer 3 of the pumping material 22, and the mesh metal electrode 4 is arranged in contact with the isolation column 5 of the field electron beam pumping ultraviolet light source;
the reticular metal electrode 4 comprises a reticular metal electrode 4 leading-out end.
The difference between this embodiment and the above embodiment is that the pumping material 22 of the field electron beam pumping uv light source is modified, the mesh-shaped metal electrode 4 is added, and the rest of the structure is the same as that of the above embodiment, and will not be described herein again.
The reticular metal electrode 4 is prepared by conventional photoetching, electron beam evaporation or lift-off process, and may be Ti/Al/Ni/Au reticular electrode with corresponding thickness of 20 nm/100 nm/50 nm/300 nm.
In the present embodiment, the pumping material 22 is modified by adding the mesh-shaped metal electrode 4, and the pumping material 22 is electrically connected to other structures through the leading end of the mesh-shaped metal electrode 4.
When the field electron beam pumping uv light source works, electrons of the field emission electron source 11 continuously and rapidly bombard the pumping material 22 through an electric field, so that the pumping material 22 emits light, but in actual work, because the conductivity of the semiconductor material is limited, the number of electrons bombarded on the pumping material 22 is much larger than the number of electrons that finally enter the pumping material 22 and excite photons, so that a large number of electrons are accumulated on the surface of the pumping material 22, so that a large number of negative charges are accumulated on the surface of the pumping material 22, and the subsequent field electrons are prevented from entering the pumping material 22, while in the present embodiment, the mesh-shaped metal electrode 4 is additionally arranged on the surface of the pumping material 22, and due to the excellent conductivity of the metal electrode, the electrons that cannot enter the pumping material 22 are not accumulated on the surface of the pumping material 22 but are rapidly guided away by the mesh-shaped metal electrode 4, the subsequent field electron can not be obstructed, the electron conveying efficiency in the element is improved, and the luminous efficiency of the field electron beam pumping ultraviolet light source is further improved.
The vacuum cavity 1 of the field electron beam pumping ultraviolet light source is a cavity formed by processing metal or quartz materials.
The light outlet 2 of the field electron beam pumping ultraviolet light source is sapphire with two polished surfaces.
The isolation column 5 of the field electron beam pumping ultraviolet light source is a quartz column or a quartz ball.
The pumping object layer 3 may be n-type AlxGa1-xN/AlyGa1-yN multiple quantum well active layers; the above n-type AlxGa1-xN/AlyGa1-yThe doping concentration of Si of the N multiple quantum well active layer is in the range of 5 × 1018cm-3To 1 × 1019cm-3Including end points, e.g. 5.0 × 1018cm-3、7.8×1018cm-3Or 1.0 × 1019cm-3Any one of (1); the above n-type AlxGa1-xN/AlyGa1-yThe number of periods of the N multiple quantum well active layer ranges from 20 to 50 inclusive, such as any of 20.0, 33.0, or 50.0.
The pumping object layer 3 may be a single layer of n-type AlxGa1-xAn N layer having a thickness in a range from 200 nanometers to 1000 nanometers, inclusive, such as any of 300.0 nanometers, 500.3 nanometers, or 1000.0 nanometers. The effect of the present invention can be more intuitively understood by combining with fig. 6, and fig. 6 is a comparison between the luminance of the blue-light phosphor excited by a specific embodiment (right) of the field emission electron beam pumping ultraviolet light source provided by the present invention and the luminance of the blue-light phosphor excited by the traditional field emission electron beam pumping ultraviolet light source (left); it can be seen that the field emission electron beam pumped ultraviolet light source provided by the invention has higher brightness.
Fig. 7 is a schematic diagram of the current density of the electron source when a voltage is applied between the first electrode 82 and the second electrode 83 and when no voltage is applied, according to an embodiment of the field electron beam pumped ultraviolet light source provided by the present invention. It is obvious that the current density of the electron source in the device is greatly increased when a voltage is applied between the first electrode 82 and the second electrode 83, and the light emitting effect of the field emission electron beam pumping ultraviolet light source can be remarkably improved.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The field electron beam pumping uv light source provided by the present invention is described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (10)

1. A field electron beam pumping ultraviolet light source is characterized by comprising a field emission electron source and a first power supply;
the epitaxial layer of the field emission electron source sequentially comprises a second AlN buffer layer, an n-type GaN semiconductor layer, an electrode layer, a dielectric isolation layer and a metal grid from the sapphire substrate to the outside;
the electrode layer comprises a first electrode and a second electrode; the first electrode and the second electrode are arranged on the same surface of the n-type GaN semiconductor layer, a gap is formed between the first electrode and the second electrode, and the first electrode is not in direct contact with the second electrode;
the dielectric isolation layer is arranged on the surfaces of the first electrode and the second electrode, and the dielectric isolation layer is a layer with a first opening, and the first opening corresponds to the gap;
the metal gate is arranged on the surface of the dielectric isolation layer and is a metal gate with a second opening, and the second opening corresponds to the gap;
the field emission cathode array of the field emission electron source is arranged in the gap and is in contact with the n-type GaN semiconductor layer;
the field emission cathode array is a field emission cathode array with ultraviolet photosensitive characteristics;
the first electrode is connected with the negative electrode of the first power supply, and the second electrode is connected with the positive electrode of the first power supply.
2. The field electron beam pumped ultraviolet light source of claim 1, wherein said first electrode and said second electrode are comb-shaped or finger-shaped electrodes having a periodic pattern in their faces;
the first electrode and the second electrode form a group of interdigital electrodes.
3. The field electron beam pumped ultraviolet light source of claim 2, wherein said interdigitated electrodes have a finger pitch in the range of 5 microns to 10 microns.
4. The field electron beam pumped ultraviolet light source of claim 3, wherein said interdigitated electrodes have a finger width in the range of 5 microns to 10 microns.
5. The field electron beam pumped ultraviolet light source of claim 4, wherein said interdigitated electrodes have a finger length in the range of 100 microns to 300 microns.
6. The field electron beam pumped ultraviolet light source of claim 1, wherein said field emission cathode array is an array of one-dimensional nanopillars.
7. The field electron beam pumped ultraviolet light source of claim 6, wherein the diameter of said one-dimensional nanopillars is in the range of 30 nm to 100 nm.
8. The field electron beam pumped ultraviolet light source of claim 7, wherein the height of said one-dimensional nanopillars is in the range of 100 nm to 500 nm.
9. The field electron beam pumping uv light source of claim 1, wherein the pumping material of the field electron beam pumping uv light source further comprises a mesh metal electrode, the mesh metal electrode is disposed on a surface of a pumping object layer of the pumping material, and the mesh metal electrode is disposed in contact with the spacer of the field electron beam pumping uv light source;
the reticular metal electrode comprises a reticular metal electrode leading-out end.
10. The field electron beam pumped ultraviolet light source of claim 1, wherein the metal grid of the field electron beam pumped ultraviolet light source has a thickness in the range of 100 nm to 500 nm.
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CN112687520B (en) * 2020-12-16 2021-09-24 中山大学 Space electron excited reflective deep ultraviolet light source
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1460275A (en) * 2000-07-19 2003-12-03 松下电器产业株式会社 Electron emission element and production method therefor, and image display unit using this
FR2930673A1 (en) * 2008-04-28 2009-10-30 Saint Gobain FIELD EFFECT-EMITTING FLAME LAMP AND MANUFACTURE THEREOF
CN102254765A (en) * 2010-05-20 2011-11-23 清华大学 Method for preparing field emission device
JP2012252970A (en) * 2011-06-07 2012-12-20 Toray Ind Inc Manufacturing method of electron emission element
CN107464891A (en) * 2017-07-06 2017-12-12 苏州恒久光电科技股份有限公司 The manufacture method of the OLED display screen of complex contour

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1460275A (en) * 2000-07-19 2003-12-03 松下电器产业株式会社 Electron emission element and production method therefor, and image display unit using this
FR2930673A1 (en) * 2008-04-28 2009-10-30 Saint Gobain FIELD EFFECT-EMITTING FLAME LAMP AND MANUFACTURE THEREOF
CN102254765A (en) * 2010-05-20 2011-11-23 清华大学 Method for preparing field emission device
JP2012252970A (en) * 2011-06-07 2012-12-20 Toray Ind Inc Manufacturing method of electron emission element
CN107464891A (en) * 2017-07-06 2017-12-12 苏州恒久光电科技股份有限公司 The manufacture method of the OLED display screen of complex contour

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