CN115064601A - Photoelectric device and manufacturing method thereof - Google Patents
Photoelectric device and manufacturing method thereof Download PDFInfo
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- CN115064601A CN115064601A CN202210770504.6A CN202210770504A CN115064601A CN 115064601 A CN115064601 A CN 115064601A CN 202210770504 A CN202210770504 A CN 202210770504A CN 115064601 A CN115064601 A CN 115064601A
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- 238000002955 isolation Methods 0.000 claims description 71
- 230000005693 optoelectronics Effects 0.000 claims description 58
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- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052981 lead sulfide Inorganic materials 0.000 claims description 4
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- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 claims description 4
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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Abstract
The invention provides a photoelectric device and a manufacturing method thereof. The photoelectric device comprises a substrate, a heavily doped region, a quantum dot film and a transparent conductive film layer. The substrate has opposing first and second surfaces. The heavily doped region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavily doped region is a first conduction type material. The quantum dot film is arranged on the second surface of the substrate, and the material of the quantum dot film is a second conductive type material. The transparent conductive film layer is arranged on one side, away from the substrate, of the quantum dot film. The photoelectric device is provided with the quantum dot film on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region, and the quantum dot film can be set to absorb light with larger wavelength, so that the photoelectric device provided with the quantum dot film can detect light with larger wavelength range, and the detection effect of the photoelectric device is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a photoelectric device and a manufacturing method thereof.
Background
A Single Photon Avalanche Diode (SPAD) is an important optoelectronic device that can detect single photons. With the high-speed development of the silicon-based integrated circuit industry, the single-photon avalanche diode can be gradually manufactured by the silicon-based integrated circuit process in recent years to form a photoelectric device capable of detecting single photons. However, due to the material characteristics of silicon-based materials, the detectable wavelength is generally less than 1.1 μm, and detection at longer wavelengths is not easily achieved.
Disclosure of Invention
According to a first aspect of embodiments of the present invention, there is provided a photovoltaic device comprising:
a substrate having opposing first and second surfaces;
the heavily doped region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;
the quantum dot film is arranged on the second surface of the substrate and is made of a second conductive type material;
and the transparent conductive film layer is arranged on one side of the quantum dot film, which deviates from the substrate.
In some embodiments, the optoelectronic device comprises a plurality of heavily doped regions arranged in an array.
In some embodiments, the optoelectronic device includes an isolation wall disposed in the substrate, and the isolation wall is disposed at a periphery of the heavily doped region.
In some embodiments, the isolation retaining wall comprises:
the first isolation retaining wall is arranged on the inner side of the first surface of the substrate and is positioned on the periphery of the heavily doped region;
and the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
In some embodiments, the optoelectronic device includes a diffusion protection region located at a periphery of the heavily doped region.
In some embodiments, the material of the quantum dot thin film comprises a combination of one or more of lead sulfide, lead selenide, lead telluride, mercury telluride, and mercury cadmium telluride.
In some embodiments, the optoelectronic device is a single photon avalanche diode.
According to a second aspect of embodiments of the present invention, there is provided a method of manufacturing an optoelectronic device, the method comprising:
providing a substrate; the substrate has first and second opposing surfaces;
forming a heavily doped region in the substrate, wherein the heavily doped region is exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;
forming a quantum dot film on the second surface of the substrate, wherein the quantum dot film is made of a second conductive type material;
and forming a transparent conductive film layer on one side of the quantum dot film, which is far away from the substrate.
In some embodiments, after providing a substrate, prior to forming a heavily doped region in the substrate, the method comprises:
forming first isolation retaining walls, wherein the first isolation retaining walls are positioned on the inner side of the first surface of the substrate and positioned on the periphery of the heavily doped region to form a diffusion protection region between every two adjacent first isolation retaining walls;
forming a heavily doped region in the substrate comprises:
and forming a heavily doped region at the diffusion protection region, wherein the diffusion protection region is positioned at the periphery of the heavily doped region.
In some embodiments, after forming the heavily doped region in the substrate, before forming the quantum dot thin film on the second surface of the substrate, the method includes:
forming a second isolation retaining wall in the substrate; the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
In some embodiments, prior to said providing a substrate, the method comprises:
providing a substrate base plate;
the providing a substrate comprises:
forming the substrate on the substrate base plate.
In some embodiments, after forming the heavily doped region in the substrate, before forming the second isolation wall in the substrate, the method includes:
and thinning the substrate base plate to expose the substrate.
Based on the technical scheme, the photoelectric device is provided with the quantum dot film on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region, and the quantum dot film can be arranged to absorb light with larger wavelength, so that the photoelectric device provided with the quantum dot film can detect light with larger wavelength range, and the detection effect of the photoelectric device is improved.
Drawings
Fig. 1 is a cross-sectional view of an optoelectronic device provided in accordance with an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating an operating principle of an optoelectronic device according to an embodiment of the present invention;
fig. 3 is a cross-sectional view of another photovoltaic device provided in accordance with an embodiment of the present invention;
fig. 4 is a flow chart of a method of fabricating an optoelectronic device according to an embodiment of the present invention;
fig. 5 to 13 are manufacturing process diagrams of an optoelectronic device according to an embodiment of the present invention;
fig. 14 to 20 are manufacturing process diagrams of another optoelectronic device provided in an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Embodiments of the present invention are described in detail below with reference to fig. 1-20.
An embodiment of the present invention provides a photoelectric device, including:
a substrate having opposing first and second surfaces;
the heavily doped region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;
the quantum dot film is arranged on the second surface of the substrate and is made of a second conductive type material;
and the transparent conductive film layer is arranged on one side of the quantum dot film, which deviates from the substrate.
The photoelectric device is provided with the quantum dot film on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region, and the quantum dot film can be set to absorb light with larger wavelength, so that the photoelectric device provided with the quantum dot film can detect light with larger wavelength range, and the detection effect of the photoelectric device is improved.
The optoelectronic device referred to herein may be a Single Photon Avalanche Diode (SPAD), or a device having such a Single Photon Avalanche Diode (SPAD), such as a photodetector. The opto-electronic device referred to herein may be a back-illuminated opto-electronic device.
The optoelectronic device provided by the present application is described in detail below with reference to fig. 1 to 3.
Referring to fig. 1, in some embodiments, the optoelectronic device 100 includes a substrate 11, a heavily doped region 40, a quantum dot film 60, and a transparent conductive film layer 70. The substrate 11 has opposing first and second surfaces 1001 and 1002. The heavily doped region 40 is disposed in the substrate 11 and exposed from the first surface 1001 of the substrate 11, and the material of the heavily doped region 40 is a first conductive type material. The quantum dot thin film 60 is arranged on the second surface 1002 of the substrate 11, and the material of the quantum dot thin film 60 is a second conductive type material. The transparent conductive film layer 70 is disposed on a side of the quantum dot film 60 facing away from the substrate 11.
In the present embodiment, the substrate 11 is a silicon-based substrate and includes a silicon material. The material of the substrate 11 here may be a first conductivity type material.
Here, the first conductivity type is N-type, and the second conductivity type is P-type. The first conductive type material is an N-type material, and the second conductive type material is a P-type material. Accordingly, the substrate 11 is an N-type substrate. The heavily doped region 40 is an N-type doped region. The heavily doped region 40 may be formed by implanting an N-type dopant material. Wherein, the doping concentration of the N-type doping material of the heavily doped region 40 is higher than that of the N-type doping material in the substrate 11.
In some embodiments, the material of the quantum dot thin film 60 is a combination of one or more of lead sulfide PbS, lead selenide PbSe, lead telluride PbTe, mercury telluride HgTe, and mercury cadmium telluride HgCdTe. The quantum dot film 60 may be set to a predetermined thickness according to circumstances so as to be able to absorb light having a wavelength >1.1 um.
Here, the quantum dot thin film 60 may cover the entire second surface of the substrate 11.
It should be noted that, because the doping concentration in the substrate is generally low, the photoelectric device in which the material of the substrate is the second conductive type material has little influence on the overall photoelectric performance of the photoelectric device in which the material of the substrate is the first conductive type material relative to the material of the substrate 11. Thus, in other embodiments, the material of the substrate 11 is a second conductivity type material.
The material of the transparent conductive film layer 70 may be indium-doped tin oxide (ITO) or other similar materials.
Here heavily doped region 40 serves as a cathode for connection to the positive terminal of a power supply during operation of optoelectronic device 100. The heavily doped region 40 can be connected to a connection lead from the side facing away from the substrate 11 for connection to the positive pole of a power supply. The transparent conductive film layer 70 serves as an anode for connecting to the negative electrode of the power supply in the operation of the optoelectronic device 100. Optionally, the transparent conductive film layer 70 may be connected to a connection lead or the like from a side away from the substrate 11 to connect to a negative electrode of a power supply.
In some embodiments, the optoelectronic device 100 has a plurality of photodiode cells (such as single photon avalanche diode cells). The plurality of photodiode units are arranged in an array. Accordingly, the optoelectronic device 100 includes a plurality of heavily doped regions 40. Each heavily doped region 40 forms a respective photodiode cell with a corresponding substrate portion and a corresponding quantum dot film 60 portion, etc. The plurality of heavily doped regions 40 are arranged in an array.
Of course, in other embodiments, the optoelectronic device may also include a heavily doped region.
In some embodiments, the optoelectronic device 100 includes an isolation wall disposed in the substrate 11, and the isolation wall is disposed at the periphery of the heavily doped region.
For example, as shown in fig. 1, the isolation wall includes a first isolation wall 20 and a second isolation wall 50. The first isolation wall 20 is disposed on the inner side of the first surface 1001 of the substrate 11 and is located at the periphery of the heavily doped region 40. The second isolation wall 50 is disposed inside the second surface of the substrate 11 and opposite to the first isolation wall 20.
Here, the first isolation wall 20 is exposed from the first surface 1001 of the substrate 11. The second isolation wall 50 is exposed from the second surface 1002 of the substrate 11. Of course, the isolation retaining wall can be not exposed. The first isolation retaining wall is integrally arranged closer to the first surface of the substrate, and the second isolation retaining wall is arranged closer to the second surface of the substrate.
In this embodiment, the first isolation walls 20 are formed by Shallow Trench Isolation (STI). The second isolation retaining wall 50 adopts a Deep Trench Isolation (DTI) structure. Opposite ends of the first and second retaining walls 20 and 50 are spaced apart. The first isolation wall 20 is located in the substrate 11 and exposed from the first surface 1001. The first isolation wall 20 extends inward from the first surface 1001 of the substrate by a predetermined depth. The second isolation wall 50 extends inward from the second surface 1002 of the substrate 11 by a predetermined depth.
Of course, in other embodiments, the specific structure of the first isolation retaining wall and the second isolation retaining wall is not limited. For example, the first isolation wall 20 and the second isolation wall 50 may be connected as a whole to form an isolation wall penetrating the first surface 1001 and the second surface 1002 of the substrate 11.
It should be noted that, for the optoelectronic device 100 including a plurality of heavily doped regions 40 arranged in an array, the isolation wall is further located between two adjacent heavily doped regions 40 to isolate the optoelectronic device 100 into a plurality of photodiode units arranged in an array. And for the photoelectric device comprising a heavily doped region, the isolation retaining wall, the heavily doped region on the inner side of the isolation retaining wall and other structures correspondingly form a photodiode unit.
It should be noted that only 3 heavily doped regions are illustrated in fig. 1, and three corresponding photodiode units can be formed. The optoelectronic device may in fact comprise any other plurality of heavily doped regions, such as 2, 4, 5 … …. The application does not limit the number of the heavily doped regions in the photoelectric device and the corresponding photodiode units, and can be set according to specific conditions.
In some embodiments, the optoelectronic device 100 includes a diffusion protected region 30, the diffusion protected region 30 being located at a periphery of the heavily doped region 40, such as the diffusion protected region 30 shown in fig. 1 being located at a peripheral side periphery of the doped region 40.
Here, the diffusion protection region 30 is located at the periphery side periphery of the heavily doped region 40, which can be understood as that the diffusion protection region 30 is located at the periphery side wall periphery of the heavily doped region 40. The peripheral sidewall of the heavily doped region 40 may be understood herein as an outer surface region except for a side of the heavily doped region 40 facing the quantum dot film 60 and a side facing away from the quantum dot film 60.
Of course, in other embodiments, the diffusion protection region may cover a part or all of the region of the heavily doped region facing the quantum dot film, except for the periphery of the doped region 40.
The material of the diffusion protection region 30 may be a first conductivity type material. The doping concentration of the diffusion protection region 30 may be lower than that of the heavily doped region 40 and higher than that of the substrate 11, so as to protect the periphery of the heavily doped region 40 and prevent the heavily doped region 40 from being adversely affected by the photo-generated electrons drifting around the heavily doped region 40.
It should be noted that, in the optoelectronic device 100, in order to enable smooth transmission of photo-generated electrons generated in the quantum dot thin film 60 to silicon and eventually trigger avalanche, another heavily doped region (P-type doped region) with the second conductivity type material, which is matched with the heavily doped region 40, is not disposed on the substrate 11 near the second surface 1002.
Referring to fig. 2, based on the above description of the optoelectronic device 100, the heavily doped region 40 of the optoelectronic device 100 forms a heterojunction with the corresponding substrate 11 portion and the quantum dot thin film 60 portion. The region indicated by the dotted line frame is a depletion region, and the directional straight arrow in the region is the direction of the built-in electric field. When the optoelectronic device 100 operates, photons penetrate from the transparent conductive film layer 70 into the quantum dot film 60, and are absorbed by the quantum dot film 60 to generate photo-generated electrons and holes. Under the action of the built-in electric field, the photogenerated carriers drift towards the side of the substrate 11 in the depletion region, and enter the avalanche region near the heavily doped region 40, so as to generate photon counting. The moving direction of the holes and the photo-generated electrons is opposite, and the holes drift towards the neutral region of the quantum dot film 60 (i.e. the region of the quantum dot film 60 close to the transparent conductive film layer 70), and are finally recombined or collected by the transparent conductive film 60. Photons not absorbed by the quantum dot film 60 will continue into the substrate 11 and be absorbed by the substrate 11, resulting in a corresponding photon count.
Since the quantum dot thin film 60 can be set to have an absorption cutoff wavelength greater than 1.1 um. The optoelectronic device 100 can detect photons having a wavelength greater than 1.1 um. Of course, photons having a wavelength of less than or equal to 1.1 μm can be detected due to the substrate 11. Compared with a photoelectric device only adopting a silicon-based substrate, the photoelectric device 100 has a wider detection wavelength range, and is beneficial to improving the detection effect of the photoelectric device.
Referring to fig. 3, another optoelectronic device 200 is provided according to an embodiment of the present invention. The structure of the optoelectronic device 200 is substantially the same as that of the optoelectronic device 100, and reference may be made to the related description for the same or similar parts, which are not repeated herein. The difference is that the diffusion protection region 30 of the optoelectronic device 200 may cover the heavily doped region 40 on the side facing the quantum dot film, in addition to the periphery of the peripheral side of the doped region 40. As shown in fig. 3, here the diffusion protection region 30 covers the entire region of the heavily doped region 40 except for the side facing away from the quantum dot film 60.
Referring to fig. 4, an embodiment of the present invention provides a method for manufacturing a photovoltaic device, where the method includes steps S101 to S107:
in step S101, a substrate is provided; the substrate has first and second opposing surfaces;
in step S103, forming a heavily doped region in the substrate, wherein the heavily doped region is exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;
in step S105, forming a quantum dot thin film on the second surface of the substrate, where the material of the quantum dot thin film is a second conductive type material;
in step S107, a transparent conductive film layer is formed on a side of the quantum dot thin film facing away from the substrate.
Referring to fig. 5 to 13, fig. 5 to 13 are diagrams illustrating a manufacturing process of the optoelectronic device 100.
In step S101, a substrate 11 is provided.
In some embodiments, before step S101, the method comprises step S1011 of:
in step S1011, a base substrate is provided.
Referring to fig. 5, a substrate 10 is provided. The substrate base plate 10 has a first surface 101 and a second surface 102 facing away from each other. The substrate base plate 10 may be a structural layer doped with a first conductive type material. For example, silicon may be doped.
Accordingly, step S101 can be specifically realized by step S1012 as follows:
in step S1012, the substrate is formed on the substrate base.
As shown in fig. 6, a substrate 11 is formed on a base substrate 10. The substrate 11 may have the same conductivity type as the base substrate 10. I.e. the material of the substrate 11 may also be a first conductivity type material. The silicon-based substrate may also be formed by doping the same dopant material, such as doped silicon. Alternatively, the doping concentration of the substrate 11 may be less than that of the substrate base plate 10.
In some embodiments, after step S101, before step S103, the method comprises the following step S1021:
in step S1021, a first isolation wall 20 is formed, and the first isolation wall is located at the inner side of the first surface of the substrate and at the periphery of the heavily doped region 40.
As shown in fig. 7, the first isolation wall 20 may be exposed from the first surface 1001 of the substrate 11.
The first isolation wall 20 may be a shallow trench isolation structure. Specifically, the first isolation wall 20 may be formed by first providing a corresponding trench 21 in the substrate 11, and then filling the trench 21 with a dielectric material (e.g., an oxide (e.g., silicon oxide), a nitride (e.g., silicon nitride or silicon oxynitride), a low-k dielectric and/or another suitable dielectric material), etc.
After step S1021, the method comprises the following step S1022:
in step S1022, a diffusion protection region 30 is formed between two adjacent first isolation walls 20, as shown in fig. 8.
The material of the diffusion protection region 30 may be a first conductivity type material.
Accordingly, as shown in fig. 9, in step S103, the method may specifically include: a heavily doped region 40 is formed at the diffusion protection region 30, and the diffusion protection region 30 is located at the periphery of the heavily doped region.
After the heavily doped region 40 is formed here, the diffusion protection region 30 is located at the periphery side periphery of the heavily doped region 40. I.e., the diffusion protection region 30 is located at the periphery of the peripheral sidewall of the heavily doped region 40. The peripheral sidewall of the heavily doped region 40 may be understood herein as an outer surface region except for a side of the heavily doped region 40 facing the quantum dot film 60 and a side of the quantum dot film 60 facing away from the substrate 11.
The material of the diffusion protection region 30 may be a first conductivity type material. The doping concentration of the diffusion protection region 30 may be lower than that of the heavily doped region 40 and higher than that of the substrate 11, so as to protect the periphery of the heavily doped region 40 and prevent the heavily doped region 40 from being adversely affected by the photo-generated electrons drifting around the heavily doped region 40.
In some embodiments, after step S103, before step S105, the method comprises the following step S104:
in step S104, forming a second isolation wall 50 in the substrate 11; the second isolation retaining wall 50 is disposed opposite to the first isolation retaining wall 20.
As shown in fig. 11, the second isolation wall 50 may be a deep trench isolation structure, and the second isolation wall 50 is located in the substrate 11. The second isolation wall 50 may be formed by providing a corresponding trench 51 in the substrate 11, and then filling the trench 51 with a dielectric material (e.g., an oxide (e.g., silicon oxide), a nitride (e.g., silicon nitride or silicon oxynitride), a low-k dielectric, and/or another suitable dielectric material).
The specific structure of the first and second isolation walls 20 and 50 can be referred to the above description, and will not be described herein.
In some embodiments, after step S103, before forming the second isolation wall in the substrate, the method includes step S1040:
in step S1040, the substrate base plate is thinned to expose the substrate.
As shown in fig. 10, the substrate base 10 is thinned to expose the substrate 11. The substrate base 10 may be thinned by mechanical grinding or mechanical peeling. The surface of the substrate 11 exposed after thinning on the side is the second surface of the substrate 11.
It should be noted that, in the thinning process, only the substrate base plate 10 may be thinned and removed, or a portion of the substrate 11 close to one side of the substrate base plate may be removed together, so that the substrate 11 meets the thickness requirement. Specifically, the substrate base plate 10 or the associated thinned substrate 11 needs to be removed by thinning, and can be adaptively selected according to specific situations.
In step S105, the quantum dot thin film 60 is formed on the second surface 1002 of the substrate 11, as shown in fig. 12. The material of the quantum dot thin film 60 is a second conductive type material.
In some embodiments, the material of the quantum dot thin film 60 is a combination of one or more of lead sulfide PbS, lead selenide PbSe, lead telluride PbTe, mercury telluride HgTe, and mercury cadmium telluride HgCdTe. The quantum dot film 60 may be set to a predetermined thickness according to circumstances so as to be able to absorb light having a wavelength >1.1 um.
The quantum dot thin film 60 may be formed by spin coating, ink jet printing, doctor blading, and the like. Here, the quantum dot thin film 60 may cover the entire second surface 1002 of the substrate 11. The specific thickness of the quantum dot thin film 60 may be set according to the specific material, the wavelength to be absorbed, and the like.
Here, the first conductivity type is N-type, and the second conductivity type is P-type. The first conductive type material is an N-type material, and the second conductive type material is a P-type material. Accordingly, the substrate 11 is an N-type substrate. The heavily doped region 40 is an N-type doped region. The heavily doped region 40 may be formed by implanting an N-type dopant material. Wherein the doping concentration of the N-type doping material of the heavily doped region 40 is higher than the doping concentration of the N-type doping material in the substrate 11.
As shown in fig. 13, in step S107, a transparent conductive film layer 70 is formed on a side of the quantum dot thin film 60 facing away from the substrate 11.
The transparent conductive film layer 70 is formed by depositing a transparent conductive film 70 on the surface of the quantum dot film 60 by magnetron sputtering or the like. The material of the transparent conductive film 70 may be indium-doped tin oxide (ITO) or other similar materials.
Referring to fig. 14 to 20, fig. 14 to 20 are diagrams illustrating a manufacturing process of the optoelectronic device 100'. The optoelectronic device 100' is substantially the same as the optoelectronic device 100 of fig. 5 to 13 described above, and reference is made to the above description for the same and similar parts. Except that the optoelectronic device 100 ' is provided with the substrate 11 ' directly and operates directly in the substrate 10 ' without support from the substrate base. Accordingly, the subsequent thinning process without providing a substrate base plate, after forming the heavily doped region 40 in the substrate 10 ', may directly proceed to the corresponding step of providing the second isolation wall 50. the substrate 11' may be similar to the substrate 11 described above.
In the present application, the structural embodiments and the method embodiments may be complementary to each other without conflict.
Those skilled in the art will appreciate that the drawings are merely schematic representations of one preferred embodiment and that the blocks or flow diagrams in the drawings are not necessarily required to practice the present invention. The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the present invention shall be covered thereby. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (13)
1. An optoelectronic device, wherein the optoelectronic device comprises:
a substrate having opposing first and second surfaces;
the heavily doped region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;
the quantum dot film is arranged on the second surface of the substrate and is made of a second conductive type material;
and the transparent conductive film layer is arranged on one side of the quantum dot film, which deviates from the substrate.
2. The optoelectronic device according to claim 1, wherein the optoelectronic device comprises a plurality of heavily doped regions arranged in an array.
3. The optoelectronic device according to claim 1, wherein the optoelectronic device comprises an isolation wall disposed in the substrate, and the isolation wall is disposed at a periphery of the heavily doped region.
4. The optoelectronic device according to claim 3, wherein the insulating dam comprises:
the first isolation retaining wall is arranged on the inner side of the first surface of the substrate and is positioned on the periphery of the heavily doped region;
and the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
5. The optoelectronic device according to claim 4, wherein the optoelectronic device comprises a diffusion protection region at least at a periphery of the heavily doped region.
6. The optoelectronic device according to claim 1, wherein the material of the quantum dot thin film comprises a combination of one or more of lead sulfide, lead selenide, lead telluride, mercury telluride, and mercury cadmium telluride.
7. The optoelectronic device according to any one of claims 1 to 6, wherein the optoelectronic device is a single photon avalanche diode.
8. A method of fabricating an optoelectronic device, the method comprising:
providing a substrate; the substrate has first and second opposing surfaces;
forming a heavily doped region in the substrate, wherein the heavily doped region is exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;
forming a quantum dot film on the second surface of the substrate, wherein the quantum dot film is made of a second conductive type material;
and forming a transparent conductive film layer on one side of the quantum dot film, which is far away from the substrate.
9. A method of fabricating an optoelectronic device according to claim 8, wherein after providing the substrate, prior to forming the heavily doped region in the substrate, the method comprises:
and forming a first isolation retaining wall, wherein the first isolation retaining wall is positioned on the inner side of the first surface of the substrate and positioned on the periphery of the heavily doped region.
10. The method of manufacturing an optoelectronic device according to claim 9, wherein after the first isolation retaining wall is formed, the method comprises
Forming a diffusion protection area between two adjacent first isolation retaining walls;
forming a heavily doped region in the substrate comprises:
and forming a heavily doped region at the diffusion protection region, wherein the diffusion protection region is positioned at the periphery of the heavily doped region.
11. A method of fabricating an optoelectronic device as claimed in claim 9 or claim 10, wherein after forming the heavily doped region in the substrate, the method comprises, before forming the quantum dot film at the second surface of the substrate:
forming a second isolation retaining wall in the substrate; the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
12. A method of fabricating an optoelectronic device according to claim 11, wherein prior to said providing a substrate, the method comprises:
providing a substrate base plate;
the providing a substrate comprises:
forming the substrate on the substrate base plate.
13. The method of fabricating an optoelectronic device according to claim 12, wherein after forming the heavily doped region in the substrate, before forming the second isolation wall in the substrate, the method comprises:
and thinning the substrate base plate to expose the substrate.
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| CN114664965A (en) * | 2020-12-22 | 2022-06-24 | 上海禾赛科技有限公司 | Single-photon avalanche diode, forming method, driving method and laser radar |
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| CN1618132A (en) * | 2002-02-09 | 2005-05-18 | 三星电子株式会社 | Silicon light-receiving device |
| CN106601857A (en) * | 2016-11-22 | 2017-04-26 | 浙江大学 | Photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and preparation method thereof |
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