CN106505115A - Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet detector and preparation method thereof - Google Patents
Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet detector and preparation method thereof Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 122
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 93
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 78
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 239000002096 quantum dot Substances 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000012546 transfer Methods 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 14
- 239000010980 sapphire Substances 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 150000001336 alkenes Chemical class 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 238000007654 immersion Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 9
- 230000004043 responsiveness Effects 0.000 abstract description 7
- 238000011982 device technology Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 65
- 239000000463 material Substances 0.000 description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000004044 response Effects 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
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Abstract
The invention discloses a kind of quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector, it is have n-type doping gallium nitride layer, insulating barrier, boron nitride layer, graphene layer, quantum dot layer on a sapphire substrate from bottom to top successively, and is provided with first electrode and side electrode.Its preparation method is：First on the Sapphire Substrate gallium nitride piece of n-type doping, side electrode and insulating barrier is made, leave window on the insulating layer；Transfer graphene on boron nitride, then boron nitride is transferred on insulating barrier so that boron nitride contacts to form hetero-junctions with gallium nitride in window；Make first electrode again on Graphene, and photodoping is carried out to Graphene with quantum dot, obtain quantum dot light doped graphene/boron nitride/gallium nitride photodetector.The UV photodetector of the present invention carries out photodoping by quantum dot and further optimizes its device performance to Graphene, and dark-state electric current is low, and there is high responsiveness and detection degree to ultraviolet band, and device technology is simple.
Description
Technical field
A kind of a kind of the present invention relates to UV photodetector and preparation method thereof, more particularly to quantum dot light doped graphite
Alkene/boron nitride/gallium nitride ultraviolet photodetector and preparation method thereof, belongs to photoelectric device technical field.
Background technology
In recent years, ultraviolet detector causes the extensive concern of research and industrial circle as a kind of important photoelectric device.
Wherein, the photodetector of two-dimensional material/semiconductor heterostructure is exceedingly fast with which response and high responsiveness and spy
Estimate performance, attracted the participation of more and more researchers, can be widely applied to aviation, military field.
After grapheme material was found in 2004 first and prepares and obtained the Nobel Prize in 2010, its research takes
Obtained faster progress.More researchs indicate grapheme material to be had and its excellent electricity, optically and mechanically property, such as
High carrier mobility, high light transmittance, high Young's modulus and extremely strong pliability etc..These excellent properties make
Graphene has attracted concern widely and has further been applied to photoelectric device technical field, including photodetector, the sun
Battery, optical sensor etc..In recent years, many researchers have carried out application study of the Graphene in photodetector direction, it
Advantage can be achieved on ultrafast response and have more broadband spectral response, and as two-dimensional material range of application
Extensively and convenient.But simultaneously take account of the thickness that Graphene only has atomic size Nano grade, its absorb light fewer (～
2.3%) optical detection responsiveness and detection degree that, this will affect detector.So by finding suitable material and Graphene
In conjunction with or design new structure, strengthen its optical detection response, be the emphasis for studying and applying photodetector based on Graphene.
Research finds, by Graphene and semiconductor body material are combined into heterojunction structure, to be effectively increased its absorptivity,
And obtain high responsiveness and detection degree, and further can carry out photodoping using quantum dot to improve its property to Graphene
Energy.
Content of the invention
It is an object of the invention to provide a kind of responsiveness is high and the quantum dot light doped graphene of preparation process is simple/
Boron nitride/gallium nitride photodetector and preparation method thereof.
Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet the photodetector of the present invention, it is characterised in that
There are gallium nitride layer, insulating barrier, boron nitride layer, graphene layer and the quantum dot of n-type doping in Sapphire Substrate from bottom to top successively
Layer, is provided with window on described insulating barrier so that in window, gallium nitride layer forms hetero-junctions with boron nitride layer directly contact, described
Detector also includes that first electrode and side electrode, first electrode are arranged on graphene layer, and side electrode is arranged on gallium nitride layer,
Described insulating barrier area more than gallium nitride layer area 10%, side electrode area accounts for the 1-10% of gallium nitride layer area, and first
Electrode area is less than graphene layer, and graphene layer area is less than boron nitride layer and the area more than window in insulating barrier, described
Quantum dot layer is used for carrying out photodoping to Graphene.
In above-mentioned technical proposal, in described graphene layer Graphene be 1 layer to 10 layers, and carry out light with quantum point and mix
Miscellaneous.
Described insulating barrier is silica, silicon nitride, silicon oxynitride or aluminum oxide.
Described quantum dot is one or more in ZnO, GaN, SiC or Si quantum dot, and the diameter of quantum dot is less than
100nm.
Described first electrode is selected from one or several in gold, palladium, silver, titanium, chromium, nickel, platinum and aluminium with side electrode
Combination electrode, thickness is 1-500nm.
The method for preparing above-mentioned quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector, its feature
It is, comprises the steps：
On a sapphire substrate after the gallium nitride piece of growth n-type doping, in the upper side electrode for making certain area, area accounts for nitridation
The 1-10% of gallium piece area, being then placed in chemical cleaning solution immersion 1-30 minutes carries out surface clean, and deionized water is cleaned
Take out afterwards and dry up；Other region growing insulating barriers outside the electrode of gallium nitride piece top, area is more than gallium nitride piece area
10%, window is left in the zone line of insulating barrier, in window, gallium nitride layer exposes；Transfer graphene on boron nitride, institute
The area of the graphene layer that states is less than the area of boron nitride and more than window area in insulating barrier；Nitridation by upper for transfer Graphene
Boron global transfer is on above-mentioned insulating barrier so that boron nitride covers window area and boron nitride edge is without departing from insulating barrier area
Domain；First electrode is made on Graphene, quantum dot is spun to graphenic surface carries out photodoping to Graphene, dries, obtains
Arrive quantum dot light doped graphene/boron nitride/gallium nitride photodetector.
The invention also discloses a kind of quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector, which is special
Levy and be, have the nitrogen of the gallium nitride layer of n-type doping, insulating barrier, thickness for 1-10nm on a sapphire substrate from bottom to top successively
Change boron layer, graphene layer and ZnO quantum dot layer, window is provided with described insulating barrier so that gallium nitride layer and nitridation in window
Boron layer directly contact forms hetero-junctions, and the detector also includes that first electrode and side electrode, first electrode are arranged at Graphene
On layer, side electrode is arranged on gallium nitride layer, and described insulating barrier area is more than the 10% of gallium nitride layer area, side electrode area
The 1-10% of gallium nitride layer area is accounted for, first electrode area is less than graphene layer, and graphene layer area is less than boron nitride layer and big
The area of window in insulating barrier, a diameter of 10-20nm of described ZnO quantum dot, for carrying out photodoping to Graphene.
Traditional semiconductor material body, especially compound semiconductor, with excellent photoelectric property.Graphene is led with partly
Body material is combined, if both fermi levels have larger difference, can form schottky junction.Under illumination, photon is mainly by bulk
Semi-conducting material absorbs and produces electron hole pair, and in the presence of junction barrier electric field, Graphene will be injected in electronics or hole
Interior.Graphene carriers concentration is changed therewith, and its resistivity can also change.Extraneous light intensity changes, the electricity of injection
Son or hole concentration also change.The resistance change of Graphene can reflect the probe response situation of illumination to external world, additional
Under voltage condition, the electric current on its schottky junction both sides can also change in the case where there is no light so as to reflecting extraneous light conditions.
Additionally, the fermi level of Graphene can be adjusted by quantum dot photodoping, the potential barrier of Schottky also accordingly changes, the light of device
Electric detection performance can also be adjusted.Quantum dot will produce hole under light conditions and be injected in Graphene, Jin Ergai
The carrier density of Graphene is become.And the boron nitride layer being embedded between semiconductor and Graphene, can press down as insulating barrier
Carrier flow between semiconductor processed and Graphene, so that greatly reduce its size of current in the dark state；But in illumination
In the case of, carrier flow is greatly reinforced, and its inhibitory action is negligible, and does not interfere with the size of photoelectric current.In chemical combination
In thing semiconductor, gallium nitride is semiconductor material with wide forbidden band, and its energy gap is 3.39ev, in ultraviolet light wave band, for purple
Outer light has good spectral absorption and response.
The present invention is had an advantageous effect in that compared with prior art：
Compared with traditional photodetector, the quantum dot light doped graphene/boron nitride/gallium nitride photodetector of the present invention
Using the high carrier mobility and good photoelectric respone and the excellent photoelectric property of gallium nitride of Graphene, inhale with more preferable light
Receive and optical detection response performance；And its preparation process is simple, it is easy to accomplish.Reduced secretly using the interfacial characteristics of boron nitride simultaneously
State electric current, make use of quantum dot that the optics doping of Graphene is improved to the electrology characteristic of Graphene and then improves device
Can, so as to obtain high responsiveness and detection degree.
Description of the drawings
Structural representations of the Fig. 1 for quantum dot light doped graphene/boron nitride/gallium nitride photodetector；
Energy band schematic diagrames of the Fig. 2 for quantum dot light doped graphene/boron nitride/gallium nitride heterojunction.
Fig. 3 is that curent change of the quantum dot light doped graphene/boron nitride/gallium nitride photodetector under optical switch status is bent
Line.
Specific embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
With reference to Fig. 1, the quantum dot light doped graphene/boron nitride/gallium nitride photodetector of the present invention, is in sapphire
There are n-type doping gallium nitride layer 1, insulating barrier 2, boron nitride layer 3, graphene layer 4, quantum dot layer 5 from bottom to top successively on substrate, also
There are first electrode 6 and side electrode 7, side electrode 7 to be arranged on n-type doping gallium nitride layer 1, first electrode 6 is arranged on graphene layer 4
On；The band structure schematic diagram of the Graphene/boron nitride/gallium nitride heterojunction of quantum dot optics doping is as shown in Fig. 2 Graphene
Schottky junction is formed with gallium nitride, quantum dot is set on Graphene, quantum dot produces hole and is injected under light conditions
In Graphene, so as to change the carrier density of Graphene, while quantum dot light doping is so as to adjust the fermi level of Graphene,
So that the potential barrier of Schottky also accordingly changes；Boron nitride layer is embedded between gallium nitride and Graphene, can be pressed down as insulating barrier
Carrier flow between semiconductor processed and Graphene, such that it is able to greatly reduce its size of current in the dark state.
Embodiment 1：
1) the front side on the Sapphire Substrate gallium nitride piece of n-type doping makes the side electrode of certain area, and material is
100nm ni au electrodes, area account for the 5% or so of whole front side silicon nitride gallium substrate, and then successively immersion acetone, isopropanol are molten
Surface clean is carried out in liquid, takes out and dry up after deionized water cleaning；
2) gained gallium nitride piece is left long one layer of 80nm silicon nitride (SiN on region in frontx) insulating barrier, area is about entirely
The 80% of gallium nitride substrate, the not long insulating barrier in region of certain area (2mm*2mm) of leaving a blank in the zone line of insulating barrier, i.e. window
Mouthful；
3) single-layer graphene is transferred on boron nitride, the area of boron nitride is more than in insulating barrier more than the area of single-layer graphene
Between region of leaving a blank, described boron nitride thickness is 5nm；
4) by the boron nitride global transfer of upper for transfer Graphene on above-mentioned gallium nitride insulating barrier, and boron nitride and graphite are required
Alkene covers the region left a blank of intermediate insulating layer and edge is without departing from insulating layer region；
5) first electrode, silver electrode of the material for 100nm is made on Graphene, and light is carried out to Graphene with ZnO quantum dot
Doping, the ZnO quantum dot of a diameter of 10nm is spun to graphenic surface and is dried, obtain ZnO quantum dot photodoping Graphene/
Boron nitride/gallium nitride photodetector.
Making alive between two electrodes, by the change of testing photoelectronic detector electric current under different illumination, can reflect which right
Different spectrum and the response of light intensity.When Fig. 3 adds 1V voltages to photodetector obtained in this example, illumination and 25 μ W/ are being not added with
cm2Ultraviolet lighting intensity under time interval 20s follow-on test current value change curve, it can be seen that in the dark state, the light
The dark-state electric current of electric explorer is minimum, can reach 10-7A ranks, on-off ratio brings up to thousand of from tens, and this is due in gallium nitride
And very thin boron nitride layer between graphene layer, is provided with, the boron nitride layer inhibits the carrier between gallium nitride and Graphene
Flowing, so that greatly reduce its size of current in the dark state；Under ultraviolet lighting, ZnO quantum dot carries out light to Graphene
Doping, in Graphene, carrier concentration is greatly improved so that the responsiveness of the photodetector is reached up to 1900A/W, detection degree
1013More than Jones.
Embodiment 2：
1) the front side on the Sapphire Substrate gallium nitride piece of n-type doping makes the side electrode of certain area, and material is
100nm chrome gold electrodes, area account for the 5% or so of whole front side silicon nitride gallium substrate, and then successively immersion acetone, isopropanol are molten
Surface clean is carried out in liquid, takes out and dry up after deionized water cleaning；
2) gained gallium nitride piece is left long one layer of 80nm silicon nitride (SiN on region in frontx) insulating barrier, area is about entirely
The 90% of gallium nitride substrate, the not long insulating barrier in region of certain area (1mm*1mm) of leaving a blank in the zone line of insulating barrier；
3) single-layer graphene is transferred on boron nitride, it is desirable to which the area of boron nitride is more than insulation more than the area of single-layer graphene
Region of leaving a blank in the middle of layer；
4) by the boron nitride global transfer of upper for transfer Graphene on above-mentioned gallium nitride insulating barrier, and boron nitride and graphite are required
Alkene covers the region left a blank of intermediate insulating layer and edge is without departing from insulating layer region；
5) first electrode, gold electrode of the material for 100nm is made on Graphene, and light is carried out to Graphene with ZnO quantum dot
Doping, the ZnO quantum dot of a diameter of 10nm is spun to graphenic surface and is dried, obtain ZnO quantum dot photodoping Graphene/
Boron nitride/gallium nitride photodetector.
Embodiment 3：
1) the front side on the Sapphire Substrate gallium nitride piece of n-type doping makes the side electrode of certain area, and material is
200nm chrome gold electrodes, area account for the 5% or so of whole front side silicon nitride gallium substrate, and then successively immersion acetone, isopropanol are molten
Surface clean is carried out in liquid, takes out and dry up after deionized water cleaning；
2) gained gallium nitride piece is left long one layer of 80nm silicon nitride (SiN on region in frontx) insulating barrier, area is about entirely
The 90% of gallium nitride substrate, the not long insulating barrier in region of certain area (1mm*1mm) of leaving a blank in the zone line of insulating barrier；
3) 3 layer graphenes are transferred on boron nitride, it is desirable to which the area of boron nitride is more than insulation more than the area of single-layer graphene
Region of leaving a blank in the middle of layer；
4) by the boron nitride global transfer of upper for transfer Graphene on above-mentioned gallium nitride insulating barrier, and boron nitride and graphite are required
Alkene covers the region left a blank of intermediate insulating layer and edge is without departing from insulating layer region；
5) first electrode, gold electrode of the material for 200nm is made on Graphene, and light is carried out to Graphene with Si quantum dots mix
Miscellaneous, the Si quantum dots of a diameter of 10nm are spun to graphenic surface and are dried, Si quantum dot lights doped graphene/nitridation is obtained
Boron/gallium nitride photodetector.
Embodiment 4
1) the front side on the Sapphire Substrate gallium nitride piece of n-type doping makes the side electrode of certain area, and material is
100nm ni au electrodes, area account for the 10% or so of whole front side silicon nitride gallium substrate, and then successively immersion acetone, isopropanol are molten
Surface clean is carried out in liquid, takes out and dry up after deionized water cleaning；
2) gained gallium nitride piece is left long one layer of 100nm aluminum oxide (Al on region in front2O3) insulating barrier, area is about whole
The 80% of individual gallium nitride substrate, the not long insulating barrier in region of certain area (2mm*2mm) of leaving a blank in the zone line of insulating barrier；
3) 10 layer graphenes are transferred on boron nitride, it is desirable to which the area of boron nitride is more than insulation more than the area of single-layer graphene
Region of leaving a blank in the middle of layer；
4) by the boron nitride global transfer of upper for transfer Graphene on above-mentioned gallium nitride insulating barrier, and boron nitride and graphite are required
Alkene covers the region left a blank of intermediate insulating layer and edge is without departing from insulating layer region；
5) first electrode, silver electrode of the material for 100nm is made on Graphene, and light is carried out to Graphene with Si quantum dots mix
Miscellaneous, the Si quantum dots of a diameter of 1nm are spun to graphenic surface and are dried, Si quantum dot lights doped graphene/nitridation is obtained
Boron/gallium nitride photodetector.
Embodiment 5
1) the front side on the Sapphire Substrate gallium nitride piece of n-type doping makes the side electrode of certain area, and material is
100nm ni au electrodes, area account for the 5% or so of whole front side silicon nitride gallium substrate, and then successively immersion acetone, isopropanol are molten
Surface clean is carried out in liquid, takes out and dry up after deionized water cleaning；
2) gained gallium nitride piece is left long one layer of 100nm silica (SiO on region in front2) insulating barrier, area is about
The 80% of whole gallium nitride substrate, the not long insulating barrier in region of certain area (2mm*2mm) of leaving a blank in the zone line of insulating barrier；
3) 5 layer graphenes are transferred on boron nitride, it is desirable to which the area of boron nitride is more than insulation more than the area of single-layer graphene
Region of leaving a blank in the middle of layer；
4) by the boron nitride global transfer of upper for transfer Graphene on above-mentioned gallium nitride insulating barrier, and boron nitride and graphite are required
Alkene covers the region left a blank of intermediate insulating layer and edge is without departing from insulating layer region；
5) first electrode, gold electrode of the material for 100nm is made on Graphene, and light is carried out to Graphene with GaN quantum dots
Doping, the GaN quantum dots of a diameter of 20nm are spun to graphenic surface and are dried, obtain GaN quantum dot light doped graphenes/
Boron nitride/gallium nitride photodetector.
Claims (7)
1. quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector, it is characterised in that in Sapphire Substrate
On have gallium nitride layer (1), insulating barrier (2), boron nitride layer (3), graphene layer (4) and the quantum of n-type doping from bottom to top successively
Point layer (5), is provided with window on described insulating barrier (2) so that gallium nitride layer (1) and boron nitride layer (3) directly contact in window
Hetero-junctions is formed, the detector also includes that first electrode (6) and side electrode (7), first electrode (6) are arranged at graphene layer
(4) on, side electrode (7) is arranged on gallium nitride layer (1), and described insulating barrier (2) area is more than gallium nitride layer (1) area
10%, side electrode (7) area accounts for the 1-10% of gallium nitride layer (1) area, and first electrode (6) area is less than graphene layer (4), stone
Black alkene aspect product is less than boron nitride layer (3) and the area more than window in insulating barrier (2), and it is right that described quantum dot layer (5) is used for
Graphene carries out photodoping.
2. quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector according to claim 1, its are special
Levy and be, in described graphene layer (4) Graphene be 1 layer to 10 layers, and carry out photodoping with quantum point.
3. quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector according to claim 1, its are special
Levy and be, described insulating barrier (2) is silica, silicon nitride, silicon oxynitride or aluminum oxide.
4. quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector according to claim 1, its are special
Levy and be, described quantum dot is one or more in ZnO, GaN, SiC or Si quantum dot, and the diameter of quantum dot is less than
100nm.
5. quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector according to claim 1, its are special
Levy be described first electrode (6) and side electrode (7) be selected from the one kind in gold, palladium, silver, titanium, chromium, nickel, platinum and aluminium or
Several combination electrodes, thickness are 1-500nm.
6. the quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet light electrical resistivity survey as described in any one of claim 1-5 is prepared
The method for surveying device, it is characterised in that comprise the steps：
On a sapphire substrate after the gallium nitride piece of growth n-type doping, in the upper side electrode (7) for making certain area, area is accounted for
The 1-10% of gallium nitride piece area, being then placed in chemical cleaning solution immersion 1-30 minutes carries out surface clean, deionized water
Take out after cleaning and dry up；Other region growing insulating barriers (2) outside the electrode of gallium nitride piece top, area are unilateral more than gallium nitride
Long-pending 10%, leaves window in the zone line of insulating barrier, and in window, gallium nitride layer exposes；Transfer graphene to boron nitride
On, the area of described graphene layer is less than the area of boron nitride and more than window area in insulating barrier；By upper for transfer Graphene
Boron nitride global transfer on above-mentioned insulating barrier so that boron nitride covers window area and boron nitride edge without departing from insulation
Layer region；First electrode (6) is made on Graphene, quantum dot is spun to graphenic surface carries out photodoping to Graphene,
Dry, obtain quantum dot light doped graphene/boron nitride/gallium nitride photodetector.
7. quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet photodetector, it is characterised in that in Sapphire Substrate
On have the gallium nitride layer (1) of n-type doping, insulating barrier (2), thickness boron nitride layer (3), graphite for 1-10nm from bottom to top successively
Alkene layer (4) and ZnO quantum dot layer (5), are provided with window on described insulating barrier (2) so that gallium nitride layer (1) and nitridation in window
Boron layer (3) directly contact forms hetero-junctions, and the detector also includes first electrode (6) and side electrode (7), first electrode (6)
It is arranged on graphene layer (4), side electrode (7) is arranged on gallium nitride layer (1), described insulating barrier (2) area is more than nitridation
The 10% of gallium layer (1) area, side electrode (7) area account for the 1-10% of gallium nitride layer (1) area, and first electrode (6) area is less than
Graphene layer (4), graphene layer area are less than boron nitride layer (3) and the area more than window in insulating barrier (2), described ZnO
Lateral size of dots is 10-20nm, for carrying out photodoping to Graphene.
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