CN105280749A - Photoelectric detector based on graphene thin film and preparation method thereof - Google Patents
Photoelectric detector based on graphene thin film and preparation method thereof Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000002390 adhesive tape Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000011358 absorbing material Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000002356 single layer Substances 0.000 abstract description 3
- 238000004891 communication Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 241001466460 Alveolata Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a photoelectric detector based on a graphene thin film. Si/SiO2 is adopted as substrate; grapheme is adopted as light absorption material; and Au is adopted as source and drain electrodes. Single layer or few layers of grapheme is prepared on the substrate. Electrodes are prepared on the grapheme. A detector with a transistor structure is formed. The invention also discloses a preparation method of the photoelectric detector based on the graphene thin film. The preparation method has simple technology and low cost so that the method is suitable for mass production. The photoelectric detector has excellent performance and can be applied to the fields such as weak light detection, ultrafast optical pulse detection, and optical communication. The detector is suitable for detection within the visible light and far-infrared light wavelength range.
Description
Technical field
The invention belongs to technical field of photoelectric detection, relate to photoelectric detector structure, particularly relate to a kind of photodetector based on graphene film and preparation method thereof.
Background technology
Graphene is a kind of special material, and it is by SP
2the two-dimensional hexagonal alveolate texture that carbon atom hydridization is formed, it can absorb 2.3% of vertical incidence light, and scope, from ultraviolet to far red light, causes the extensive concern of people.Graphene has zero band gap, zero effective rest mass, and carrier mobility is high, to outstanding features such as absorptivity are high.Therefore make good use of the target that Graphene is people always, wherein based on the photoelectric response characteristic of Graphene, utilize its exploitation photodetector to be a kind of novel photoelectric-detection technology being rich in prospect.
The cardinal principle of detector changes light signal into the signal of telecommunication, and in time having illumination, light swashs hot carrier and moves to bottom from top layer, makes accumulation at bottom, forms electric current; Comprise photovoltaic effect, photo-thermal electrical effect, thermal effect of radiation, plasma exciatiaon mechanism.Those skilled in the art mainly describe the performance of photodetector by these physical quantitys, as: inside and outside quantum effect, photoelectric respone rate, noise equivalent power.Wherein photoelectric respone rate is an of paramount importance parameter, and it is divided by incident optical power by response current intensity; This detector performance of the larger explanation of responsiveness is better.
At present, the responsiveness based on the photodetector of Graphene is limited in 10mAW
-1, mainly because the absorption of mono-layer graphite atom pair light reduces.Colloidal Quantum Dots and Graphene are combined into aggregate, the responsiveness of Graphene can be improved, but the spectral region that now detector can detect reduces.Obtaining the ropy defect of Graphene to reduce CVD growth method, introducing PbS quantum doping, improving light absorption, increasing charge carrier, in prior art based on the photodetector structure figure of Graphene as shown in Figure 1.
Within 2011, make public for the first time the single-layer graphene that to tile in silicon waveguide, centre is aluminium oxide, and waveguide is by silicon and Electrode connection.Changing Fermi level by controlling applied voltage, controlling light absorption.The own bandwidth of graphene photodetector, up to 500GHz, does not observe the phenomenon of photoelectric current reduction at high frequency band.The more important thing is, the generation of photocarrier and movement and other known semiconductor detectors different, it has high bandwidth, and source-drain voltage is zero and good internal quantum efficiency.
Although these methods improve photoresponse rate, complicated process of preparation, cost is higher, is not suitable for a large amount of production.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of preparation method of the photodetector based on graphene film.
For achieving the above object, the invention provides following technical scheme:
Based on the photodetector of graphene film, adopt Si/SiO
2do substrate, Graphene does light absorbing material, and Au does source-drain electrode.
Further, substrate is prepared individual layer or few layer graphene, Graphene makes electrode, form the detector of transistor arrangement.
Further, based on the preparation method of the photodetector of graphene film, step is as follows:
1) substrate cleaning: clean substrate successively with acetone, ethanol, deionized water, oxygen plasma respectively;
2) prepare Graphene: adopt micromechanics stripping method, with the highly oriented pyrolytic graphite that tapes up, doubling is separated 3-4 time, be transferred on silicon chip, vacuumize with baking oven and heat 1 ~ 2min under 100 DEG C of temperature conditions, naturally cool to room temperature, to tear adhesive tape, obtain the substrate covering Graphene;
3) electrode is made: with the substrate of positive photoetching rubber S1805 uniform fold, design electrode structure, then adopt laser direct-writing at Graphene place, obtain electrode pattern, adopting vapour deposition method evaporation thickness to be the metal Ti of 10 ~ 20nm and thickness is the Au of 40 ~ 80nm, then use acetone cleaning photoetching glue and unnecessary metal, obtain the panel detector structure containing electrode and Graphene.
Further, through step 1) substrate that processed makes figure notation, concrete mode is as follows:
1) adopt the substrate of positive photoetching rubber S1805 uniform fold, thickness, at 500 ± 10nm, carries out exposure 2 ~ 3s with binary exposure machine to make digital mask plate by oneself, and develop 30 ± 2s in AZ300 developer solution, obtains preliminary figure notation pattern;
2) adopt magnetron sputtering embrane method to plate Cr5 ± 1s at substrate surface, then on Cr, plate Au, Au thickness is 5 ~ 10nm, then with acetone cleaning, obtains gold mark.
Beneficial effect of the present invention is: the photodetector based on Graphene disclosed by the invention, and its preparation technology is simple, and cost is lower is applicable to a large amount of production, and photoelectric detector performance is excellent.Can be applied to weak light detection, ultrafast optical pulses detects, and the fields such as optical communication, are applicable to the wavelength of wave-length coverage within visible ray and far red light.
Accompanying drawing explanation
In order to make object of the present invention, technical scheme and beneficial effect clearly, the invention provides following accompanying drawing and being described:
Fig. 1 is photodetector structure schematic diagram;
Fig. 2 is the Raman spectrum performance plot of graphene film;
Fig. 3 is graphene photodetector structure chart in embodiment 1, wherein 1 represents Graphene, and 2 represent electrode, and 3 represent silicon chip;
Fig. 4 is graphene photodetector measurement result.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Embodiment 1
1. cleaning silicon chip surface
(1) by 3 × 3cm
2silicon chip acetone, ethanol, deionized water respectively cleaning silicon chip 15 minutes successively;
(2) oxygen plasma cleaning silicon chip 5 minutes are used;
2. make figure notation
(1) adopt positive photoetching rubber S1805 uniform fold silicon chip, during gluing, rotating speed is at 3000 ~ 4000run/min, and final thickness, at 500nm, then carries out exposure 2s, and then develop 30s, obtains preliminary figure notation pattern;
(2) adopt magnetron sputtering embrane method at silicon chip surface plating Cr time 5s, on Cr, then plate Au time 10s, thickness is 8nm, then with acetone cleaning, obtains gold mark;
3. prepare Graphene
Adopt micromechanics stripping method, with the highly oriented pyrolytic graphite that tapes up (HOPG), doubling is separated 3-4 time, is transferred on silicon chip, and vacuumize at 100 DEG C of heating 2min with baking oven, wait for and naturally cool to room temperature, adhesive tape of tearing, obtains Graphene;
4. find Graphene with light microscope, and keep a record;
5. the Raman collection of illustrative plates of the Graphene of selected areas in measuring process 4, then can know the Graphene number of plies by inference, as shown in Figure 2, and test thickness by atomic force microscope, the checking Graphene number of plies;
6. make electrode
(1) with positive photoetching rubber S1805 uniform fold silicon chip, design electrode structure, then adopts laser direct-writing at Graphene place, and then obtains electrode pattern;
(2) adopting vapour deposition method evaporation thickness to be the metal Ti of 15nm and thickness is the Au of 40nm; Then use acetone cleaning photoetching glue and unnecessary metal, obtain the panel detector structure only containing electrode and Graphene, as shown in Figure 3, wherein 1 represent Graphene, 2 represent electrode, and 3 represent silicon chip.
Embodiment 2
1. cleaning silicon chip surface
(1) by 3 × 3cm
2silicon chip cleans 15 minutes respectively in acetone, ethanol and deionized water;
(2) oxygen plasma cleaning silicon chip 5 minutes are used;
2. make figure notation
(1) adopt positive photoetching rubber S1805, rotate with rotating speed 3500run/s, make photoresist uniform fold silicon chip, carry out exposure 2.2s with binary exposure machine to make digital mask plate by oneself, develop 30s in AZ300 developer solution, obtains preliminary figure notation pattern;
(2) adopt magnetron sputtering embrane method at silicon chip surface plating Cr time 5s, on chromium, then plate Au time 10s, thickness is 8 nanometers, then with acetone cleaning, obtains gold mark;
3. prepare Graphene
Adopt micromechanics stripping method, with the graphite flake that tapes up, doubling is separated 3-4 time, is transferred on silicon chip, and vacuumize at 100 DEG C of heating 2min with baking oven, wait for and naturally cool to room temperature, adhesive tape of tearing, obtains Graphene;
4. find Graphene with light microscope, and keep a record;
5. measure graphite Raman collection of illustrative plates, by the Raman spectrum determination gained Graphene number of plies, characterize graphenic surface pattern by atomic force microscope,
6. make electrode
(1) with positive photoetching rubber S1805 uniform fold silicon chip, photoresist uniform fold graphenic surface is made; Expose at Graphene place with self-made electrode pattern with laser direct-writing, and then obtain electrode pattern;
(2) vapour deposition method plating thickness is adopted to be the Ti of 20nm and the Au of thickness 80nm; With acetone cleaning, obtain the graphene photodetector of belt electrode structure.
Utilize the graphene photodetector prepared by embodiment 1, under room temperature, under 1550nm wavelength illumination condition, obviously can see difference when electric current output I-V curve and unglazed photograph, as shown in Figure 4.
What finally illustrate is, above preferred embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although by above preferred embodiment to invention has been detailed description, but those skilled in the art are to be understood that, various change can be made to it in the form and details, and not depart from claims of the present invention limited range.
Claims (4)
1. based on the photodetector of graphene film, it is characterized in that, adopt Si/SiO
2do substrate, Graphene does light absorbing material, and Au does source-drain electrode.
2. according to claim 1 based on the photodetector of graphene film, it is characterized in that, substrate is prepared individual layer or few layer graphene, Graphene makes electrode, form the detector of transistor arrangement.
3. by described in claim 1 or 2 based on the preparation method of the photodetector of graphene film, it is characterized in that, step is as follows:
1) substrate cleaning: clean substrate successively with acetone, ethanol, deionized water, oxygen plasma respectively;
2) prepare Graphene: adopt micromechanics stripping method, with the highly oriented pyrolytic graphite that tapes up, doubling is separated 3-4 time, be transferred on silicon chip, vacuumize with baking oven and heat 1 ~ 2min under 100 DEG C of temperature conditions, naturally cool to room temperature, to tear adhesive tape, obtain the substrate covering Graphene;
3) electrode is made: with the substrate of positive photoetching rubber S1805 uniform fold, design electrode structure, then adopt laser direct-writing at Graphene place, obtain electrode pattern, adopting vapour deposition method evaporation thickness to be the metal Ti of 10 ~ 20nm and thickness is the Au of 40 ~ 80nm, then use acetone cleaning photoetching glue and unnecessary metal, obtain the panel detector structure containing electrode and Graphene.
4. according to claim 3 based on the preparation method of the photodetector of graphene film, it is characterized in that, through step 1) substrate that processed makes figure notation, concrete mode is as follows:
1) adopt the substrate of positive photoetching rubber S1805 uniform fold, thickness, at 500 ± 10nm, carries out exposure 2 ~ 3s with binary exposure machine to make digital mask plate by oneself, and develop 30 ± 2s in AZ300 developer solution, obtains preliminary figure notation pattern;
2) adopt magnetron sputtering embrane method to plate Cr5 ± 1s at substrate surface, then on Cr, plate Au, Au thickness is 5 ~ 10nm, then with acetone cleaning, obtains gold mark.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510825269.8A CN105280749A (en) | 2015-11-24 | 2015-11-24 | Photoelectric detector based on graphene thin film and preparation method thereof |
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| CN201510825269.8A CN105280749A (en) | 2015-11-24 | 2015-11-24 | Photoelectric detector based on graphene thin film and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826413A (en) * | 2016-06-03 | 2016-08-03 | 泰州巨纳新能源有限公司 | Graphene photoelectric detector based on composite substrate |
| CN106505115A (en) * | 2016-10-17 | 2017-03-15 | 浙江大学 | Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet detector and preparation method thereof |
| CN108305912A (en) * | 2017-01-11 | 2018-07-20 | 中国科学院上海微系统与信息技术研究所 | Bionical optical detector of graphene with wavelength selectivity and preparation method thereof |
| CN110060929A (en) * | 2019-04-25 | 2019-07-26 | 中南大学 | A kind of MoSe2The preparation method of Homojeneous p-n Junction in face |
| CN111106200A (en) * | 2019-12-31 | 2020-05-05 | 中国科学技术大学 | Infrared weak light detector, preparation method and application thereof |
| CN111599889A (en) * | 2020-05-25 | 2020-08-28 | 华南师范大学 | Self-driven photoelectric detector and optical communication system thereof |
| CN112259622A (en) * | 2020-10-09 | 2021-01-22 | 深圳第三代半导体研究院 | Visible light communication system, photoelectric detector based on two-dimensional material and preparation method |
| CN113707757A (en) * | 2021-07-09 | 2021-11-26 | 山东大学 | Method for regulating and controlling light response performance of ultraviolet photoelectric detector |
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2015
- 2015-11-24 CN CN201510825269.8A patent/CN105280749A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826413A (en) * | 2016-06-03 | 2016-08-03 | 泰州巨纳新能源有限公司 | Graphene photoelectric detector based on composite substrate |
| CN106505115A (en) * | 2016-10-17 | 2017-03-15 | 浙江大学 | Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet detector and preparation method thereof |
| CN108305912A (en) * | 2017-01-11 | 2018-07-20 | 中国科学院上海微系统与信息技术研究所 | Bionical optical detector of graphene with wavelength selectivity and preparation method thereof |
| CN108305912B (en) * | 2017-01-11 | 2024-03-26 | 中国科学院上海微系统与信息技术研究所 | Graphene bionic optical detector with wavelength selectivity and preparation method thereof |
| CN110060929A (en) * | 2019-04-25 | 2019-07-26 | 中南大学 | A kind of MoSe2The preparation method of Homojeneous p-n Junction in face |
| CN111106200A (en) * | 2019-12-31 | 2020-05-05 | 中国科学技术大学 | Infrared weak light detector, preparation method and application thereof |
| CN111106200B (en) * | 2019-12-31 | 2021-10-01 | 中国科学技术大学 | Infrared weak light detector, preparation method and application thereof |
| CN111599889A (en) * | 2020-05-25 | 2020-08-28 | 华南师范大学 | Self-driven photoelectric detector and optical communication system thereof |
| CN112259622A (en) * | 2020-10-09 | 2021-01-22 | 深圳第三代半导体研究院 | Visible light communication system, photoelectric detector based on two-dimensional material and preparation method |
| CN113707757A (en) * | 2021-07-09 | 2021-11-26 | 山东大学 | Method for regulating and controlling light response performance of ultraviolet photoelectric detector |
| CN113707757B (en) * | 2021-07-09 | 2023-08-08 | 山东大学 | Method for regulating and controlling photo-response performance of ultraviolet photoelectric detector |
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