CN105826413A - Graphene photoelectric detector based on composite substrate - Google Patents
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 46
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 title claims abstract description 14
- 239000002131 composite material Substances 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 230000004044 response Effects 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 33
- 150000001875 compounds Chemical class 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 238000001514 detection method Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 150000001336 alkenes Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 206010020751 Hypersensitivity Diseases 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- LUTSRLYCMSCGCS-BWOMAWGNSA-N [(3s,8r,9s,10r,13s)-10,13-dimethyl-17-oxo-1,2,3,4,7,8,9,11,12,16-decahydrocyclopenta[a]phenanthren-3-yl] acetate Chemical compound C([C@@H]12)C[C@]3(C)C(=O)CC=C3[C@@H]1CC=C1[C@]2(C)CC[C@H](OC(=O)C)C1 LUTSRLYCMSCGCS-BWOMAWGNSA-N 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention discloses a graphene photoelectric detector based on a composite substrate. A source electrode and a drain electrode are connected with an external power supply, and a single graphene electron transport layer is arranged on an insulating medium layer; a grid electrode layer is arranged under the insulating medium layer; the drain electrode and the grid electrode layer are connected through a grid power supply; lightly-doped silicon with the electric conductivity of 1-10 Omega/cm is adopted as the grid electrode layer. According to the detector, on the condition that the optical power is smaller than 1 nW, the responsivity can reach 1000 AW<-1>, the response time is as short as 400 ns, and the response wavelength is 400-1,200 nm. The detector can achieve rapid photoelectric response in a weak light signal, successfully fills up the blank of a graphene photoelectric device between the ultra-high speed and the supersensitivity response, is completely compatible with an existing mature silicon technology and has the great prospect in the field of high-speed weak light detection.
Description
Technical field
The present invention relates to technical field of photoelectric detection, in particular to a kind of based on graphene film
Photodetector.
Background technology
2004, the research group that Graphene is led by University of Manchester Andre professor Geim was at first
Find.It is to be currently known the thinnest a kind of material (the most single atomic layers thick ,～0.34nm), and
And there is high specific surface area (2630m2g-1), superpower electric conductivity (intrinsic mobility 200,000
cm2v-1s-1, be 100 times of silicon), heat conductivity (～5300Wm-1K-1, it is the tens of of the metals such as copper aluminum
Times), excellent light transmission (light transmittance of visible ray 97.7%), mechanical strength (Young's modulus～1.0
TPa, is 100 times of steel) and the advantage such as pliability (stretchable folding), caused science and
The great interest of industrial quarters.Graphene has in multiple fields and is extremely widely applied, and is following nanometer device
The ideal material of part, as can be used for preparing the microelectronic components such as high performance field effect transistors, solar-electricity
The photoelectric device such as pond, photodetector etc..
In recent years, graphene photodetector based on different structure designs and theoretical mechanism is continuously developed,
And the performance of excellence is shown in different application direction.Supper-fast optical detection one side, benefit from Graphene
Excellent electronic transmission performance (high mobility and ultrafast carrier electrodynamics), the light of intrinsic Graphene
Electric diode shows the photoresponse speed of femtosecond；And for detecting with hypersensitive, use photo-gating
Mechanism, hydridization or hetero-junctions Graphene photoconductive detector show the gain of light (10 of superelevation8).But,
The huge spread existed between both mechanism, just as the two sides of one piece of coin: the detection rate of femtosecond is but
Only have the responsiveness of mA/W rank；The optical signal detecting of micromicrowatt rank, the speed of response of its detection is but only
At millisecond, or even to second rank.And the application of many, such as optical alignment, remote sensing, biomedicine
Imaging, all need badly quickly and photodetection performance that high sensitivity has concurrently.Gap between Zhe Erzhe is limited
In current theoretical mechanism.Fast light detection depends on the high carrier mobility of intrinsic Graphene, same
Time by Graphene without the relatively low limitation of band gap and electron hole pair separation efficiency；And use photo-gating
Mechanism graphene photodetector, its bottleneck be then millisecond, even second slowly above electric charge transfer
And/or charge-trapping process, cause the speed of response low.Therefore, develop and have quickly response and highly sensitive concurrently
The graphene photodetector of degree, the application demand simultaneously meeting every field becomes the most urgent, also has
There is huge application prospect.
Summary of the invention
For problem above, the present invention provides a kind of graphene photodetector based on compound substrate, with
Silicon technology now is completely compatible, and compared to the graphene photodetector of conventional intrinsic-OR hydridization,
Have quick and highly sensitive photoelectric respone, and wide-band response simultaneously concurrently, successfully fill up response
Huge wide gap between both speed and sensitivity performance.
A kind of graphene photodetector based on compound substrate, wherein source electrode and drain electrode connect external power source,
Single-layer graphene electron transfer layer is arranged on insulating medium layer；Gate electrode is set below insulating medium layer
Layer；Described drain electrode and gate electrode layer are connected by grid power supply；Described gate electrode layer employing electrical conductivity is
The lightly-doped silicon of 1-10 Ω cm.
Preferably, source electrode and drain electrode use the compound electric being made up of the nickel dam that layer gold thick for 50nm is thick with 5nm
Pole.
Preferably, insulating medium layer selects the SiO of 50-350nm2, Al2O3Or HfO2。
Preferably, the lightly-doped silicon that described gate electrode layer uses electrical conductivity to be 5-8 Ω cm.
Preferably, described graphene photodetector response wave length is 200-1200nm, and Photoresponse reaches
To 1000A/W, response time reaches 400ns the soonest.
The present invention is by using the photo-gating mechanism of lightly-doped silicon-dielectric bed boundary, its system
The standby graphene photodetector response time obtained is soon to 400ns, simultaneously under low optical power, and photoelectricity
Responsiveness reaches 1000A W-1.Graphene light with traditional graphene field effect transistor and hydridization
Electric explorer, this graphene photodetector is simultaneously achieved super fast photoresponse and the highest photodetection effect
Rate.In addition, this detector also shows from visible near infrared wide-band response.The more important thing is, this stone
Ink alkene photodetector need not the preparation technology of complexity, and mates completely with silicon technology ripe now,
Important application prospect is had in quick weak light detection field.
Accompanying drawing explanation
Fig. 1 is the graphene photodetector structural representation of the present invention；
Fig. 2 is the embodiment 1 photoresponse figure under different capacity 514nm laser；
Fig. 3 is the embodiment 1 photoresponse figure under different wave length laser；
Fig. 4 is the embodiment 1 optical detection rate figure under different capacity 514nm laser；
Fig. 5 is the embodiment 1 optical detection rate under different capacity 514nm laser；
Wherein, 1-drains, and 2-Graphene electron transfer layer, 3-source electrode, 4-insulating medium layer, 5-partly leads
Body nanostructured layers, 6-gate electrode layer, 7-grid power supply, 8-external power source, 9-ammeter, 10-electronics,
11-hole, 12-laser.
Detailed description of the invention
As it is shown in figure 1, a kind of graphene photodetector based on compound substrate, wherein source electrode and drain electrode
Connecting external power source, single-layer graphene electron transfer layer is arranged on insulating medium layer；Insulating medium layer
Lower section arranges gate electrode layer；Described drain electrode and gate electrode layer are connected by grid power supply；Described gate electrode layer is adopted
With the lightly-doped silicon that electrical conductivity is 1-10 Ω cm.Source electrode and drain electrode use the layer gold thick by 50nm and 5nm
The combination electrode of thick nickel dam composition.Insulating medium layer selects the SiO of 50-350nm2, Al2O3Or HfO2；
Preferably employ the SiO of 300nm2。
Utilize the surface state that lightly-doped silicon-dielectric bed boundary exists, form a built-in electricity in interface
, direction is pointed to inside silicon by interface.When light is incident on this detector, silicon substrate absorbs photon,
Produce light induced electron and hole.Under the effect of interface built in field, and due to long-lived in lightly-doped silicon
The photo-generated carrier of life, light induced electron will be piled up at silicon-oxygen interface.These light induced electrons piled up serve as
One extra negative gate voltage, reduces the Fermi surface of Graphene, has modulated in Graphene passage
Carrier concentration, thus produce high photoelectric current.
For ease of to the purpose of the present invention, shape, constructing apparatus feature and effect thereof, doing further
Understanding and understanding, hereby give an actual example cooperation accompanying drawing, describes the structure of the embodiment of the present invention in detail.
Embodiment 1
A kind of graphene photodetector based on compound substrate, this detector primary structure includes monolayer stone
Ink alkene (prepared by tear tape method)；300nm silicon dioxide is as insulating medium layer, by hot vapor deposition；
Conductivity is that the lightly-doped silicon of 5-8 Ω cm is as gate electrode；Wherein lightly-doped silicon and silicon dioxide are made respectively
For gate electrode and insulating barrier, the gold/nickel of 50nm/5nm, as source electrode and drain electrode, passes through beamwriter lithography
Deposit with heat evaporation.
In actual applications, the interfacial state existed first with lightly-doped silicon-silicon dioxide, formed at interface
One built in field, direction is pointed to inside silicon by interface.When light is incident on this Graphene detector,
Silicon substrate absorbs photon, produces photo-generated carrier.Due to the existence of interface built in field and be lightly doped
Long-life photo-generated carrier in silicon, light induced electron is piled up at silicon-oxygen interface.These light induced electrons piled up
Act as an extra negative gate voltage, reduce the Fermi surface of Graphene, modulated Graphene passage
In carrier concentration, thus produce high photoelectric current.
As shown in Figure 2-5, the graphene photodetector based on compound substrate of this embodiment is in different merits
The light of rate has higher photoelectric respone under irradiating, and response wave length scope is between 200-1200nm.Low
Under luminous power (below 1nW), Photoresponse can reach 1000A W-1.It addition, during response device
Between soon to 400ns.
Embodiment 2
A kind of graphene photodetector based on compound substrate, this detector primary structure includes monolayer stone
Ink alkene (prepared by chemical vapour deposition technique)；280nm Al2O3As insulating medium layer, heavy by heat evaporation
Long-pending；Conductivity is that the lightly-doped silicon of 1-10 Ω cm is as gate electrode；Wherein lightly-doped silicon and silicon dioxide divide
Not as gate electrode and insulating barrier, the gold/nickel of 50nm/5nm, as source electrode and drain electrode, passes through electron beam
Photoetching and heat evaporation deposit.After tested, the Graphene light electrical resistivity survey based on compound substrate of this embodiment
Surveying device has higher photoelectric respone, response wave length scope to exist under the light of different capacity irradiates
Between 500-1200nm.Under low optical power (below 1nW), Photoresponse can reach 500A W-1。
It addition, the response device time is soon to 880ns.
Above a kind of graphene photodetector based on compound substrate provided by the present invention is carried out in detail
Thin introduction.Principle and the embodiment of the present invention are set forth by specific case used herein, with
The explanation of upper embodiment is only intended to help to understand the core concept of the present invention.It should be pointed out that, for this skill
For the those of ordinary skill in art field, under the premise without departing from the principles of the invention, it is also possible to this
Bright carrying out some improvement and modification, these improve and modify the protection domain also falling into the claims in the present invention
In.
Claims (5)
1. a graphene photodetector based on compound substrate, it is characterised in that source electrode and drain electrode connect external power source, and single-layer graphene electron transfer layer is arranged on insulating medium layer；Gate electrode layer is set below insulating medium layer；Described drain electrode and gate electrode layer are connected by grid power supply；The lightly-doped silicon that described gate electrode layer uses electrical conductivity to be 1-10 Ω cm.
Graphene photodetector the most according to claim 1, it is characterised in that source electrode and drain electrode use the combination electrode being made up of the nickel dam that layer gold thick for 50nm is thick with 5nm.
Graphene photodetector the most according to claim 1, it is characterised in that insulating medium layer selects the SiO of 50-350nm2, Al2O3Or HfO2。
4. according to the graphene photodetector described in claim 1-3, it is characterised in that the lightly-doped silicon that described gate electrode layer uses electrical conductivity to be 5-8 Ω cm.
5., according to a kind of graphene photodetector described in claim 1-4, it is characterised in that described graphene photodetector response wave length is 200-1200nm, Photoresponse reaches 1000A/W, and response time reaches 400ns the soonest.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684199A (en) * | 2017-02-13 | 2017-05-17 | 中北大学 | Ultra-fast detection structure for metal micro Nano supersrtucture surface plasma polariton |
| CN108281483A (en) * | 2018-01-29 | 2018-07-13 | 杭州紫元科技有限公司 | A kind of charge coupling device based on two-dimensional semiconductor film/insulating layer/semiconductor structure |
| CN112420768A (en) * | 2020-11-09 | 2021-02-26 | 电子科技大学 | Transistor capable of switching infrared photoelectric memory and detection functions and preparation method thereof |
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| CN102185004A (en) * | 2011-04-02 | 2011-09-14 | 复旦大学 | Graphene field effect transistor with photoconduction effect and infrared detector |
| CN105280749A (en) * | 2015-11-24 | 2016-01-27 | 中国科学院重庆绿色智能技术研究院 | Photoelectric detector based on graphene thin film and preparation method thereof |
| CN205680693U (en) * | 2016-06-03 | 2016-11-09 | 泰州巨纳新能源有限公司 | A kind of graphene photodetector based on compound substrate |
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2016
- 2016-06-03 CN CN201610393938.3A patent/CN105826413A/en active Pending
Patent Citations (4)
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|---|---|---|---|---|
| US20110042650A1 (en) * | 2009-08-24 | 2011-02-24 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
| CN102185004A (en) * | 2011-04-02 | 2011-09-14 | 复旦大学 | Graphene field effect transistor with photoconduction effect and infrared detector |
| CN105280749A (en) * | 2015-11-24 | 2016-01-27 | 中国科学院重庆绿色智能技术研究院 | Photoelectric detector based on graphene thin film and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684199A (en) * | 2017-02-13 | 2017-05-17 | 中北大学 | Ultra-fast detection structure for metal micro Nano supersrtucture surface plasma polariton |
| CN108281483A (en) * | 2018-01-29 | 2018-07-13 | 杭州紫元科技有限公司 | A kind of charge coupling device based on two-dimensional semiconductor film/insulating layer/semiconductor structure |
| CN112420768A (en) * | 2020-11-09 | 2021-02-26 | 电子科技大学 | Transistor capable of switching infrared photoelectric memory and detection functions and preparation method thereof |
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Application publication date: 20160803 |
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