CN104766902A - Infrared light detecting transistor based on graphene carbon nano tube composite absorption layer - Google Patents
Infrared light detecting transistor based on graphene carbon nano tube composite absorption layer Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 194
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 113
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 78
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 76
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 41
- 239000002131 composite material Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 135
- 239000000463 material Substances 0.000 claims description 19
- 238000001514 detection method Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 230000003595 spectral effect Effects 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 239000002109 single walled nanotube Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 239000002079 double walled nanotube Substances 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910021404 metallic carbon Inorganic materials 0.000 claims description 2
- 239000002048 multi walled nanotube Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 9
- 230000004044 response Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- -1 thickness is 300nm) Chemical compound 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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Abstract
The invention provides an infrared light detecting transistor based on a graphene carbon nano tube composite absorption layer. The transistor comprises a grid electrode metal layer, a substrate, a grid electrode medium layer and a graphene/carbon nano tube composite absorption layer which are sequentially arranged from top to bottom. The graphene/carbon nano tube composite absorption layer is composed of at least one graphene layer and at least one carbon nano tube layer. In addition, the at least one graphene layer is in contact with the grid electrode medium layer. The two ends of the graphene layer are provided with a source electrode and a drain electrode respectively. The carbon nano tube layer in the graphene/carbon nano tube composite absorption layer is arranged between the source electrode and the drain electrode. The carbon nano tube layer is not in contact with the source electrode and the drain electrode. The infrared light detecting transistor is sensitive to infrared light, and is applicable to the fields such as wire or wireless communication, sensing and monitoring.
Description
Technical field
The present invention has about a kind of infrared light detecting transistor based on graphene carbon nanotube composite absorption layer, belongs to infrared light detecting technical field.
Background technology
Along with infrared light detecting technology is in the extensive use in the field such as military, civilian, there is high sensitivity, the infrared detector of high s/n ratio becomes the focus that people chase, its detection principle is the opto-electronic conversion performance utilizing material, the photon signal of infrared radiation is converted to electronic signal, and combine with external circuit the target reaching and detect infrared signal.
Graphene is that a kind of carbon atom is with sp
2hybridized orbit presses the monoatomic layer film of benzene type arrangement, and it has the incomparable advantage of traditional material: the electron mobility on substrate during Graphene room temperature can reach 60000cm
2/ Vs.The more important thing is, Graphene due to linear band dispersion, to ultraviolet in infrared light can both have remarkable absorption, be outstanding broadband light absorbent.And due to Graphene be a kind of two-dimensional film only having a carbon atomic layer thickness, when there is other materials on its surface, the conductance of Graphene is very responsive to the electrostatic disturbances of the photo-generated carrier of other materials.According to light selection effect (Photogating effect), be expected to adopt Graphene to prepare superelevation gain photo-detector.In addition, although Graphene is very thin, but its pliability is good, large-area graphene can be prepared on other substrates such as Si, Kim seminar (Bae in 2010, S., H.Kim, et al. (2010). " Roll-to-roll production of 30-inch graphenefilms for transparent electrodes. " Nature nanotechnology 5 (8): 574-578) report the preparation transfer achieving 30inch Graphene.This advantage is expected to graphene-based device is integrated on ripe Si base integrated circuit, and then is applied to Monolithic Integrated Optoelectronic Circuits, is more conducive to image recognition and Long-distance Control, and can reduces optical detection equipment volume.
But because Graphene is very thin, its absorptance only has an appointment 2.3%, cause the intrinsic photoresponse of Graphene low by (≤1 × 10
-2mAW
-1).Seminar is had to optimize the structural design of device, as: preparation has 5 × 5mm
2the graphene-based p-n vertical heterojunction (Kim of light absorption area, C.O.et al.High photoresponsivity in anall-graphene p-n vertical junction photodetector.Nat.Commun.5:3249doi:10.1038/ncomms4249 (2014)), make its photoresponse reach 0.4-1mAW
-1; Also be reported between bilayer graphene and add charge carrier tunnel layer (Liu, C.-H., Y.-C.Chang, et al. (2014). " Graphene photodetectorswith ultra-broadband and high responsivity at room temperature. " Nature nanotechnology9:273-278), achieve over an ultra optical detection (532nm-3200nm), its photoresponse also can reach 1AW
-1.But because graphene layer is light-absorption layer, the problem that the absorptivity of device is low is not still improved.In order to improve the optical detection performance of graphene-based device, strengthening absorptance will be the important channel realizing graphene-based photon detecting element.Within 2011, Duan seminar (Liu Y.et al.Plasmon resonance enhanced multicolourphotodetection by graphene.Nat.Commun.2:579doi:10.1038/ncomms1589 (2011) .) report adopts the mode of metal phasmon and Graphene coupling effectively can strengthen photoelectric current, photoelectric current after increase is 4-5 times that does not use phasmon device, and its photoresponse reaches a few mAW
-1magnitude, visible metal phasmon coupling energy brings device performance raising to a certain degree.Frank H.L.Koppens seminar (Konstantatos in 2012, G., M.Badioli, et al. (2012). " Hybrid graphene-quantum dot phototransistors with ultrahighgain. " Nature nanotechnology 7 (6): 363-368) use Colloidal Quantum Dots for light absorbing zone, Graphene has prepared hybrid optical crystal detection pipe as photo-generated carrier migration raceway groove, give the credit to the light absorption of quantum dot, device photoresponse is up to 1 × 10
7aW
-1, just the spectral absorption characteristics of semi-conducting material PbS quantum determines the response spectrum scope of device, causes device spectral response range narrow.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of infrared light detecting transistor, it, based on graphene carbon nanotube composite absorption layer, can reduce the dark current of infrared detector and improve its responsiveness.
The present invention also aims to provide the equipment containing above-mentioned infrared light detecting transistor.
For achieving the above object, the present invention provide firstly a kind of infrared light detecting transistor based on graphene carbon nanotube composite absorption layer, wherein, this infrared light detecting transistor comprises the gate metal layer, substrate, gate dielectric layer, the graphene/carbon nano-tube composite absorption layer that set gradually from bottom to top;
Described graphene/carbon nano-tube composite absorption layer by least one layer graphene layer and at least one deck carbon nanotube layer form, graphene layer can under carbon nanotube layer, also can on carbon nanotube layer, and, at least one layer graphene layer contacts with described gate dielectric layer, the two ends of described graphene layer are respectively equipped with source electrode, drain electrode, and the carbon nanotube layer in described graphene/carbon nano-tube composite absorption layer is located between described source electrode, drain electrode.
In above-mentioned infrared light detecting transistor, the order up and down of the graphene layer in graphene/carbon nano-tube composite absorption layer and carbon nanotube layer can adjust, carbon nanotube layer is main light absorbing zone, and graphene layer is fill-in light absorbed layer and transports raceway groove as photo-generated carrier.Carbon nanotube layer and graphene layer directly contact the field-effect transistor being formed and have infrared absorption characteristic.The lower surface of source electrode contacts with graphene layer respectively with the lower surface of drain electrode, forms the conducting channel for the source electrode and drain electrode connecting transistor.Carbon nanotube layer between the source and drain, directly contacts with graphene layer, and carbon nanotube layer does not directly contact with source electrode, drain electrode.
Carbon nano-tube has wide response wave length scope at infrared band, higher operating temperature and higher signal to noise ratio, and can be separated photoproduction electron-hole pair well.The carbon nano-tube of different-diameter has different absworption peaks, and the present invention utilizes this characteristic of carbon nano-tube to change the investigative range of detector by the micro-parameter changing carbon nano-tube, thus the most sensitive wave length realizing detector controls.The present invention adopts carbon nano-tube as the main light absorbing zone of graphene/carbon nano-tube composite absorption layer infrared acquisition transistor.Carbon nano-tube and Graphene are the allotropes of material with carbon element, and the mode that they close by pi-pi bond forms interface, will contribute to transporting of charge carrier.Carbon nano-tube and Graphene have excellent electrical properties, and the transmission rate in the transfer ratio semiconductor-quantum-point of charge carrier in carbon nano-tube will be faster, and therefore, the speed of response of device can be higher.In a word, device provided by the present invention has the photoresponse higher than traditional infrared sensitive detection parts, detects wave-length coverage more flexibly, higher gain, faster response speed.And because the extensive technology of preparing of carbon nano-tube and Graphene is tending towards ripe, device of the present invention can carry out scale preparation, and cost also will be lower.
According to specific embodiment of the invention scheme, preferably, in above-mentioned infrared light detecting transistor, the carbon nano-tube in described carbon nanotube layer comprises the combination of one or more in Single Walled Carbon Nanotube, double-walled carbon nano-tube, multi-walled carbon nano-tubes, metallic carbon nanotubes, semiconductive carbon nano tube etc.
According to specific embodiment of the invention scheme, preferably, in above-mentioned infrared light detecting transistor, the thickness of described carbon nanotube layer is 1-20nm.
According to specific embodiment of the invention scheme, preferably, in above-mentioned infrared light detecting transistor, described source electrode and described drain electrode comprise at least double layer of metal respectively, and its orlop metal contacts with described graphene layer; More preferably, described source electrode is different from the orlop metal of described drain electrode, such as: the lower metal of source electrode and drain electrode is the electric conducting material of different work functions.More preferably, the thickness of described source electrode and described drain electrode is respectively 20-100nm, and the thickness of single metal layer is at least 3nm.According to the preferred embodiments of the invention, the metal of described source electrode and described drain electrode can comprise the combination of one or more in aluminium, gold, titanium, palladium, nickel and chromium etc. respectively.
According to specific embodiment of the invention scheme, preferably, in above-mentioned infrared light detecting transistor, the Graphene in described graphene layer is single-layer graphene, bilayer graphene or few layer graphene; More preferably, the number of plies of described few layer graphene is less than or equal to 10 layers.The Graphene that graphene layer adopts can be doping or unadulterated, can by comprising the technique such as mechanical stripping, chemical vapour deposition (CVD) to prepare.
According to specific embodiment of the invention scheme, preferably, in above-mentioned infrared light detecting transistor, described gate metal layer comprises at least one deck metal level; More preferably, the gross thickness of described gate metal layer is at 20-100nm, and the thickness of single metal layer is at least 3nm.
According to specific embodiment of the invention scheme, in above-mentioned infrared light detecting transistor, the material of gate metal layer, source metal and drain metal layer can be prepare in this area gate metal layer the material commonly used, one deck continuous print metallic film can be adopted, preferably, the material of described gate metal layer, source metal and drain metal layer comprises the combination of one or more in aluminium, gold, titanium, nickel and chromium etc.
According to specific embodiment of the invention scheme, in above-mentioned infrared light detecting transistor, the material of substrate can be prepare in this area substrate the material commonly used, preferably, the material of described substrate is semi-conducting material; More preferably, described semi-conducting material comprises the combination of one or more in silicon, gallium nitride, zinc oxide, carborundum etc.Substrate can be selected but be not limited to hard or the flexible substrate such as silicon chip, glass, sapphire, such as, adopt highly-doped p-type Si substrate, for supporting graphene/carbon nano-tube composite absorption layer optical detection transistor arrangement.
According to specific embodiment of the invention scheme, in above-mentioned infrared light detecting transistor, preferably, the material of gate dielectric is the dielectric material (or claiming the dielectric material of low light absorption) that light transmittance is high; More preferably, the dielectric material that described light transmittance is high comprises the combination of one or more in gallium oxide, silica, alundum (Al2O3) and silicon nitride etc.
Infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer provided by the invention can be prepared in a conventional manner, and gate dielectric layer can be formed in substrate surface by thermal oxidation method; Gate metal layer can be deposited on the surface of substrate by electron-beam vapor deposition method; Graphene can be conventional method preparation and be transferred to the surface of gate dielectric layer by the method that PMMA assists; Source electrode and drain electrode can lithographically, lift-off technique, electron-beam vapor deposition method be formed at the surface of Graphene; Can prepare graphene-channel by photoetching on the surface of Graphene, and adopt oxygen plasma technique to remove edge Graphene, carbon nano-tube can be made suspension-turbid liquid and be spin-coated among graphene-channel.When having multi-layer graphene, carbon nano-tube, repeat the preparation process of being correlated with.
Present invention also offers a kind of infrared detector, wherein, this infrared detector comprises the above-mentioned infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer.
At above-mentioned infrared detector, preferably, the upper surface of the lower surface of described gate metal layer, the upper surface of described source electrode, described drain electrode is respectively arranged with extraction electrode, and described extraction electrode is interconnected by current measurer.
Present invention also offers the above-mentioned application of infrared light detecting transistor in spectral detection analytical equipment or image display sensing equipment based on graphene/carbon nano-tube composite absorption layer.
Present invention also offers a kind of spectral detection analytical equipment, wherein, this spectral detection analytical equipment comprises the multiple above-mentioned infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer of array distribution.
Present invention also offers a kind of image display sensing equipment, wherein, this image display sensing equipment comprises the multiple above-mentioned infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer of array distribution.
Compared with prior art, advantage of the present invention is at least:
By carbon nanotube layer is coupled with graphene layer, improves integral device to the absorption of infrared light (1000nm-2200nm), improve the sensitivity of infrared light detecting;
Simultaneously, because carbon nano-tube and Graphene are all carbon structure material, its contact is better, by two metal levels respectively as the grid of transistor arrangement and source electrode, drain electrode, and graphene layer is clipped in the middle of double layer of metal as conducting channel, form optical detection transistor at a high speed.Infrared light detecting transistor provided by the invention is responsive to infrared light, can be applicable to the fields such as wired or wireless communication, sensing and monitoring.
Accompanying drawing explanation
The longitudinal profile schematic diagram of the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer that Fig. 1 provides for embodiment 1.
FET (FET, the Field Effect Transistor) schematic diagram of the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer that Fig. 2 provides for embodiment 1.
The infrared detector based on graphene/carbon nano-tube composite absorption layer with the metal interdigital (interdigitatedfingers) for strengthening effective optical detection area that Fig. 3 provides for embodiment 2.
The characteristic curve of source-drain current and grid voltage under the 2000nm illumination that the infrared detector of Fig. 4 prepared by embodiment 1 is 0.45mW at power.
Under the 2000nm illumination that the infrared detector of Fig. 5 prepared by embodiment 1 is 0.45mW at power, photoelectric current is with the characteristic curve of grid voltage.
Embodiment
In order to there be understanding clearly to technical characteristic of the present invention, object and beneficial effect, existing following detailed description is carried out to technical scheme of the present invention, but can not be interpreted as to of the present invention can the restriction of practical range.
Embodiment 1
Present embodiments provide a kind of infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer, its longitudinal profile schematic diagram as shown in Figure 1.
This infrared light detecting transistor can have field-effect transistor structure, comprise and form gate metal layer 11, substrate 12 (the heavily doped silicon chip of p-type), gate dielectric layer 13 (silicon dioxide, thickness is 300nm), graphene/carbon nano-tube composite absorption layer successively from bottom to top;
Graphene/carbon nano-tube composite absorption layer comprises graphene layer 14 and carbon nanotube layer 17, the two ends of graphene layer 14 are respectively equipped with source electrode and drain electrode, and wherein, carbon nanotube layer 17 is between source electrode and drain electrode, on graphene layer 14, directly contact with graphene layer;
Source electrode and drain electrode comprise two metal levels respectively, namely (material of the two is different for source electrode upper metal layers 18 and source electrode lower metal layer 19, be respectively Au (40nm) and Cr (5nm)), (material of the two is different for drain electrode upper metal layers 16 and drain electrode lower metal layer 15, be respectively Au (40nm) and Pd (5nm)), further, source electrode lower metal layer 19 is different with the material of drain electrode lower metal layer 15.
The infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer that the present embodiment provides can be prepared according to following concrete steps:
A, by heavily doped for p-type silicon chip, it adopts thermal oxidation process prepare 300nm thick silicon dioxide layer, adopted the ultrasonic cleaning 10 minutes respectively of acetone, isopropyl alcohol, deionized water;
B, employing electron beam evaporation prepare gate metal layer (Cr/Au=5nm/40nm);
C, the method adopting PMMA auxiliary on silicon dioxide layer, the single-layer graphene that transfer CVD grows on Copper Foil, in acetone soaking at room temperature at least 20 hours removing PMMA layers;
D, employing photoetching method, lift-off technique, electron beam evaporation prepares source electrode (Cr/Au=5nm/40nm) and drain electrode (Pd/Au=5nm/40nm);
Graphene-channel is prepared in E, second time photoetching, and adopts oxygen plasma technique to remove edge Graphene;
F, be spin-coated in graphene-channel by ready Single Walled Carbon Nanotube suspension-turbid liquid, room temperature is dried, and obtains infrared light detecting transistor.
The source electrode and drain electrode of above-mentioned infrared light detecting transistor go between, and at grid lead, obtain infrared detector (FET (FET, Field Effect Transistor)), its structure as shown in Figure 2.
Embodiment 2
Present embodiments provide a kind of infrared detector based on graphene/carbon nano-tube composite absorption layer, its structure as shown in Figure 3, it is a kind of infrared detector based on graphene/carbon nano-tube composite absorption layer with metal interdigital (interdigitated fingers) for strengthening effective optical detection area, its be the infrared detector provided in embodiment 1 basis on modify and obtain, specifically:
The patterned on top formation definition plurality of source regions of graphene layer 14 and the interdigital of drain region, strengthen effective optical detection area.
This infrared detector is a kind of very sensitive photo-detector, uses source metal and the drain metal with different work functions, can produce the inside electromotive force being used for photo-generated carrier and being separated under source and drain bias voltage.If source-drain electrode uses identical metal, then can use and sprout cover (shadow mask) to stop the light absorption at source electrode/Graphene interface (or drain electrode/Graphene interface), strengthen photoelectric current to produce, applying certain source and drain bias voltage can strengthen light detection efficiency further.
Infrared detector based on the nano combined absorbed layer of graphene/carbon provided by the present invention also can be implemented by array way, can be used for the application such as imaging.Binding signal treatment circuit can in array read current signal all photo-detectors.
Fig. 4 be infrared detector prepared by embodiment 1 be 0.23mW at power 2000nm illumination under the characteristic curve of source-drain current and grid voltage, wherein, abscissa is grid voltage, and unit is volt (V), ordinate is source-drain current, and unit is peace (A).As can be seen from Figure 4: under 2000nm Infrared irradiation, characteristic curve has obvious movement left, illustrate that the light induced electron that carbon nanotube layer produces moves to graphene layer, N-shaped doping is constituted to Graphene, and moves to external circuit under the effect of source-drain voltage.What dark represented is the situation not having illumination.
Fig. 5 be infrared detector prepared by embodiment 1 be 0.23mW at power 2000nm illumination under photoelectric current with the characteristic curve of grid voltage.As can be seen from Figure 5: this infrared detector reaches maximum photoelectric current 1.97 μ A when-5V grid voltage, corresponding photoresponse is 8.5mAW
-1.
As can be seen from the above results: infrared detector provided by the present invention is under 2000nm Infrared irradiation, dirac point can be there is significantly move right, can show that the maximum photoelectric current that it produces reaches 1.97 μ A in conjunction with photoelectric current with the characteristic curve of grid voltage, the infrared light of detector of the present invention to 2000nm has significant response.
Claims (10)
1. based on an infrared light detecting transistor for graphene carbon nanotube composite absorption layer, wherein, this transistor comprises the gate metal layer, substrate, gate dielectric layer, the graphene/carbon nano-tube composite absorption layer that set gradually from bottom to top;
Described graphene/carbon nano-tube composite absorption layer by least one layer graphene layer and at least one deck carbon nanotube layer form, and, at least one layer graphene layer contacts with described gate dielectric layer, the two ends of described graphene layer are respectively equipped with source electrode, drain electrode, carbon nanotube layer in described graphene/carbon nano-tube composite absorption layer be located at described source electrode, drain electrode between, and described carbon nanotube layer not with described source electrode, drain contact.
2. infrared light detecting transistor according to claim 1, wherein, the carbon nano-tube in described carbon nanotube layer comprises the combination of one or more in Single Walled Carbon Nanotube, double-walled carbon nano-tube, multi-walled carbon nano-tubes, metallic carbon nanotubes, semiconductive carbon nano tube; Preferably, the thickness of described carbon nanotube layer is 1-20nm.
3. infrared light detecting transistor according to claim 1 and 2, wherein, described source electrode and described drain electrode comprise at least double layer of metal respectively, and its orlop metal contacts with described graphene layer; Preferably, described source electrode is different from the orlop metal of described drain electrode; More preferably, the thickness of described source electrode and described drain electrode is respectively 20-100nm, and the thickness of single metal layer is at least 3nm.
4. the infrared light detecting transistor according to any one of claim 1-3, wherein, the Graphene in described graphene layer is single-layer graphene, bilayer graphene or few layer graphene; Preferably, the number of plies of described few layer graphene is less than or equal to 10 layers.
5. the infrared light detecting transistor according to any one of claim 1-4, wherein, described gate metal layer comprises at least one deck metal level; Preferably, the gross thickness of described gate metal layer is at 20-100nm, and the thickness of single metal layer is at least 3nm.
6. the infrared light detecting transistor according to any one of claim 1-5, wherein, the material of described gate metal layer comprises the combination of one or more in aluminium, gold, titanium, palladium, nickel and chromium, and the metal of described source electrode and described drain electrode comprises the combination of one or more in aluminium, gold, titanium, palladium, nickel and chromium respectively;
The material of described substrate is semi-conducting material; Preferably, described semi-conducting material comprises the combination of one or more in silicon, gallium nitride, zinc oxide, carborundum;
The material of described gate dielectric is the dielectric material that light transmittance is high; Preferably, the dielectric material that described light transmittance is high comprises the combination of one or more in gallium oxide, silica, alundum (Al2O3) and silicon nitride.
7. an infrared detector, wherein, this infrared detector comprises the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer described in any one of claim 1-6;
Preferably, the upper surface of the lower surface of described gate metal layer, the upper surface of described source electrode, described drain electrode is respectively arranged with extraction electrode, and described extraction electrode is interconnected by current measurer.
8. the application of infrared light detecting transistor in spectral detection analytical equipment or image display sensing equipment based on graphene/carbon nano-tube composite absorption layer described in any one of claim 1-6.
9. a spectral detection analytical equipment, wherein, this spectral detection analytical equipment comprises the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer described in multiple any one of claim 1-6 of array distribution.
10. an image display sensing equipment, wherein, this image display sensing equipment comprises the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer described in multiple any one of claim 1-6 of array distribution.
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