CN106257692A - A kind of polarization sensitive photodetector - Google Patents
A kind of polarization sensitive photodetector Download PDFInfo
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- CN106257692A CN106257692A CN201610617154.4A CN201610617154A CN106257692A CN 106257692 A CN106257692 A CN 106257692A CN 201610617154 A CN201610617154 A CN 201610617154A CN 106257692 A CN106257692 A CN 106257692A
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- 230000010287 polarization Effects 0.000 title claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000023077 detection of light stimulus Effects 0.000 claims abstract description 6
- 239000002086 nanomaterial Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000031700 light absorption Effects 0.000 abstract description 6
- 230000003321 amplification Effects 0.000 abstract description 4
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 description 12
- 230000005669 field effect Effects 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011896 sensitive detection Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses a kind of polarization sensitive photodetector based on metal phasmon structure thermoelectronic effect, including dielectric substrate, metal backing gate electrode, dielectric isolation layer, raceway groove active layer, drain electrode, source electrode and the plasmon resonance phasmon structure to polarization sensitive, the material energy gap of raceway groove active layer is more than the photon energy of incident illumination, and phasmon structure is metal Nano structure；The thermoelectron in phasmon structure is utilized to produce the strong depend-ence characteristic to incident light polarization state to realize the detection of light polarization information.The present invention has the advantage that 1, utilize phasmon structure can realize the miniaturization of the detection of light polarization information, beneficially device and integrated without additional optical element (polarizer/analyzer)；2, metal backing gate electrode is utilized both metal backing grid structure and metal nano phasmon structure can be made again to form super surface texture, increase strong light absorption by being biased voltage amplification photoelectric current, improve Photoresponse.
Description
Technical field
The present invention relates to a kind of polarization sensitive photodetector based on metal phasmon structure thermoelectronic effect, use
In the polarization characteristic of light is carried out highly sensitive detection.
Background technology
Polarization is one of intrinsic important characteristic of light, although be widely used, but the acquisition of its information is the most highly difficult.This
Be because most of optical pickocff insensitive to the polarization characteristic of light, and the polarization characteristic of light can not as light intensity that
Sample can directly record, so the polarization characteristic obtaining light needs, by polarizer, light wave is carried out polarization analysis.By many
The light intensity that secondary measurement is relevant to polarization information could release the polarization information of incident beam, and detection process is the most loaded down with trivial details, and system is divided
It is vertical numerous, so that Polarization Detection system develops into inexorable trend to integrated high sensitivity direction is miniaturized.
Surface phasmon as emerging research topic, developing rapidly of last decade, rapidly and other field Cross slot interference,
New research contents constantly occurs.When the interface of electromagnetic wave incident to metal-insulator, electromagnetic wave and metal surface freely electricity
Son interacts and makes it vibrate along with the vibration of electromagnetic wave, when the frequency of electromagnetic wave is equal to the intrinsic frequency of electronics collective oscillation
During rate, electromagnetic wave will be intensively absorbed or scatter, here it is the surface plasmon resonance generally said.And metal nano
The plasmon resonance of structure, except incident electromagnetic wave is had wavelength-dependent behavior, there is also polarization independent characteristic.Only special
Fixed incident polarized light could form plasmon resonance, and produce thermoelectron and be injected into adjacent materials, it is achieved opto-electronic conversion, institute
Detect with polarization information to utilize phasmon structure can realize wavelength information detection, and being easily integrated, and traditional
Polarization Detection system compares the photodetection realizing the polarization characteristic to light more easily.
Meanwhile, realizing polarization information detection for by phasmon structure, foreign study mechanism has made some attempts
And obtain certain progress, such as 2015, the Jason Velentine seminar of Vanderbilt university utilized chirality phasmon
Structure achieves the detection to left circularly polarized light and right-circularly polarized light.But realize polarization letter by phasmon structure at present
The correlational study of breath detection is seldom.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention combines phasmon structure and metal backing
The advantage of grid field effect transistor, devises a kind of novel Polarization-Sensitive photodetector, utilizes metal backing gate electrode both may be used
With by being biased voltage amplification photoelectric current, metal backing grid structure and metal nano phasmon structure can be made again to form super table
Face structure, increases strong light absorption, improves Photoresponse.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of polarization sensitive photodetector based on metal phasmon structure thermoelectronic effect, including insulation lining
The end, metal backing gate electrode, dielectric isolation layer, raceway groove active layer, drain electrode, source electrode and plasmon resonance to polarization sensitive etc.
From excimer structure, the material energy gap of described raceway groove active layer is more than the photon energy of incident illumination, and phasmon structure is gold
Belong to nanostructured；Described dielectric substrate, metal backing gate electrode, dielectric isolation layer and raceway groove active layer set gradually from the bottom to top,
Drain electrode and source electrode are arranged on the left and right sides of raceway groove active layer upper surface, and phasmon structure is arranged on raceway groove active layer upper surface
And between drain electrode and source electrode；The thermoelectron in phasmon structure is utilized to produce the strong depend-ence to incident light polarization state special
Property realizes the detection of light polarization information.When incident illumination is mapped to phasmon structure, owing to the grade of phasmon structure is from swashing
There is polarization independent characteristic in unit's resonant excitation, and the photon energy of incident illumination is less than the material energy gap of raceway groove active layer,
Cannot directly excite raceway groove active layer to produce electron hole pair and form light stream；Therefore phasmon mesomerism can only be excited to produce
The specific incident polarized light of thermoelectron (this thermoelectron can be injected in raceway groove active layer) could form light stream, so utilization etc.
Can realize the detection of light polarization information from excimer structure without additional optical element (polarizer/analyzer), be conducive to
The miniaturization of device and integrated.
Described metal backing gate electrode both can realize the enlarging function of field-effect transistor by being biased voltage, in order to put
Big photoelectric current；Super surface texture can be formed again, in order to strengthen absorbance, to improve Photoresponse with phasmon structure.
Preferably, the material of metal backing gate electrode is gold, silver or aluminum etc..
Preferably, so that form super surface texture reliably between metal backing gate electrode and phasmon structure,
Ask the gross thickness of described dielectric isolation layer and raceway groove active layer less than 100nm.
Concrete, surface utilizes the techniques such as thin film to prepare metal backing gate electrode on an insulating substrate, at metal backing gate electrode
Upper surface utilizes the techniques such as magnetron sputtering, plasma reinforced chemical vapour deposition or electron beam evaporation to prepare dielectric isolation layer,
Dielectric isolation layer upper surface utilizes the techniques such as semiconductive thin film to prepare raceway groove active layer, in the left and right two of raceway groove active layer upper surface
Side utilizes technique preparation drain electrode and the source electrodes such as thin film, at raceway groove active layer upper surface, utilizes the works such as micro-nano between drain electrode and source electrode
Skill prepares phasmon structure；Described micro-nano technique includes chemical gaseous phase deposition, ald, focused-ion-beam lithography, electricity
The techniques such as son bundle photoetching.
Preferably, the material of described dielectric substrate is quartz or sapphire.
Preferably, described phasmon structural periodicity metal grating, periodically ╋ shape structure, periodically zero shape structure or
Periodically shape structures etc., the material of phasmon structure is gold, silver or aluminum etc..
In general, raceway groove active layer can material selection various, but to difference detect wavelength, selected the selection of material forbidden band width
Degree will more than incident illumination photon energy for example: when incident illumination is visible ray, the material of raceway groove active layer be ZnO or
TiO2Deng；When incident illumination light is infrared light, the material of raceway groove active layer is silicon or germanium etc..
Beneficial effect: the polarization sensitive light electrical resistivity survey based on metal phasmon structure thermoelectronic effect that the present invention provides
Survey device, have the advantage that 1, utilize phasmon structure can get final product in fact without additional optical element (polarizer/analyzer)
The miniaturization of the detection of existing light polarization information, beneficially device and integrated；2, metal backing gate electrode is utilized both can to pass through to have added
Bias voltage amplifies photoelectric current, and metal backing grid structure and metal nano phasmon structure can be made again to form super surface texture,
Increase strong light absorption, improve Photoresponse.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Label in figure: 1-dielectric substrate, 2-metal backing gate electrode, 3-dielectric isolation layer, 4-raceway groove active layer, 5-drains,
6-source electrode, the 7-plasmon resonance phasmon structure to polarization sensitive.
Fig. 2 is the fundamental diagram of the present invention；
Fig. 3 is the circuit connection diagram of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
It is illustrated in figure 1 a kind of polarization sensitive photodetector based on metal phasmon structure thermoelectronic effect,
Including dielectric substrate 1, metal backing gate electrode 2, dielectric isolation layer 3, raceway groove active layer 4, drain electrode 5, source electrode 6 and plasmon resonance
Phasmon structure 7 to polarization sensitive, the material energy gap of described raceway groove active layer 4 is more than the photon energy of incident illumination
Amount, phasmon structure 7 is metal Nano structure；Described dielectric substrate 1, metal backing gate electrode 2, dielectric isolation layer 3 and raceway groove
Active layer 4 sets gradually from the bottom to top, and drain electrode 5 and source electrode 6 are arranged on the left and right sides of raceway groove active layer 4 upper surface, waits from swashing
Meta structure 7 is arranged on raceway groove active layer 4 upper surface and between drain electrode 5 and source electrode 6；Utilize the heat in phasmon structure 7
Electronics produces the strong depend-ence characteristic to incident light polarization state and realizes the detection of light polarization information.
The manufacturing process of said structure is as follows: utilize thin-film technique to prepare metal backing gate electrode at dielectric substrate 1 upper surface
2, utilize magnetron sputtering, plasma reinforced chemical vapour deposition or electron beam evaporation process system at metal backing gate electrode 2 upper surface
Standby dielectric isolation layer 3, utilizes SEMICONDUCTING THIN FILM TECHNOLOGY to prepare raceway groove active layer 4 at dielectric isolation layer 3 upper surface, active at raceway groove
The left and right sides of layer 4 upper surface utilizes thin-film technique preparation drain electrode 5 and source electrode 6, in raceway groove active layer 4 upper surface, drain electrode 5 and source
Micro-nano technique is utilized to prepare phasmon structure 7 between pole 6.
Concrete: when incident illumination is visible ray, the material of raceway groove active layer 4 is ZnO or TiO2；When incident illumination light is red
Outer smooth time, the material of raceway groove active layer 4 is silicon or germanium；The gross thickness of dielectric isolation layer 3 and raceway groove active layer 4 is 50-100nm；
Design optimization phasmon structure 7 is emphasis, and different phasmon structures 7 is different to different polarized light Effect on Detecting, than
As, detection line polarisation can design cycle property metal grating, can be with design optimization structure to realize integrated to different polarization light
Detection.
As in figure 2 it is shown, polarization sensitive photodetector based on metal phasmon structure thermoelectronic effect work is former
Reason is: when incident illumination is mapped to phasmon structure 7, owing to phasmon structure 7 resonant excitation exists polarization independent characteristic, and
And the photon energy of incident illumination is less than the material energy gap of raceway groove active layer 4, it is impossible to directly excite raceway groove active layer 4 to produce electricity
Sub-hole is to forming photoelectric current；Phasmon structure 7 resonance the most only can be excited to produce thermoelectron, and (this thermoelectron can be noted
Enter in raceway groove active layer 4) specific incident polarized light could form photoelectric current.
Thermionic generation is owing to phasmon structure 7 resonance will decay, and decay has two ways: one is radiation
Decay forms photon, and one is non-radiative decay.In phasmon structure 7 material conduction band, electronics obtains energy and raises formation heat
Electronics, the suitable thermoelectron of energy will be diffused into metal and interface and be injected in adjacent semiconductor active layer,
At this moment outside have circuit collection just to have photoelectric current generation.By being biased voltage, electronics is made to concentrate bottom raceway groove active layer 4
Transmission, amplifies photoelectric current, improves Photoresponse.The thermoelectron utilizing the non-radiative decay of phasmon structure to produce realizes light
Electrical resistivity survey is surveyed, and this kind is relatively low for the energy requirement of incident photon, only needs incident photon energy to be more than shape between metal and quasiconductor
The schottky barrier height become, and without photoelectric current can be formed higher than the energy gap of quasiconductor.Metal backing gate electrode 2 simultaneously
Both can improve Photoresponse by being biased voltage amplification photoelectric current, metal backing gate electrode 2 and phasmon can be made again
Structure 7 forms super surface texture, increases strong light absorption, improves Photoresponse.
Embodiment one
For realizing a kind of polarization sensitive photodetector being applicable to visible region Polarization Detection, select quartz as lining
The end, magnetron sputtering is utilized to prepare aluminum thin film back gate electrode on its surface；The side of electron beam evaporation is utilized at back-gate electrode upper surface
Method prepares SiO2Dielectric spacer layer；Utilizing ZnO films grown by magnetron sputtering active layer on dielectric spacer layer surface, thickness is about
100nm；Thermal evaporation coating process is used to prepare gold thin film drain electrode and source electrode in active layer surface afterwards；Between source drain,
Beamwriter lithography and lift-off technique manufacturing cycle metal grating phasmon structure is utilized on semiconductor active layer.
The line polarized light of visible region incides on periodicity metal grating, and after exciting plasmon resonance, decay produces
Thermoelectron, energy suitable thermoelectron diffusion transport to golden light grid and ZnO interface, and be injected in ZnO, in source electrode and drain electrode
Between bias field effect under, thermoelectron to source electrode motion formed photoelectric current.Metal back grid structure and metal nano phasmon
Structure forms super surface texture, increases strong light absorption, improves Photoresponse.Utilize field-effect transistor characteristic, by adding simultaneously
Bias voltage amplifies photoelectric current, thus can improve response time and the responsiveness of sensitive detection parts.
Embodiment two
For realizing a kind of polarization sensitive photodetector being applicable near infrared region Polarization Detection, select quartz as lining
The end, thermal evaporation coating process is utilized to prepare gold thin film back-gate electrode；In the method system that back-gate electrode upper surface utilizes magnetron sputtering
Standby SiO2Dielectric spacer layer；Dielectric spacer layer surface utilize plasma enhanced chemical vapor deposition prepare Si active layer；
Thermal evaporation coating process is used to prepare gold thin film drain electrode and source electrode in active layer surface afterwards；Between source drain, quasiconductor
Active layer utilizes beamwriter lithography and lift-off technique manufacturing cycle metal grating phasmon structure.
The line polarized light of near infrared region incides in periodicity metal grating phasmon structure, excites plasmon resonance
Decay afterwards produces thermoelectron, energy suitable thermoelectron diffusion transport to golden light grid and Si interface, and is injected in Si, in source
Under bias field effect between pole and drain electrode, thermoelectron forms photoelectric current to source electrode motion.Metal back grid structure is received with metal
Rice phasmon structure forms super surface texture, increases strong light absorption, improves Photoresponse.Utilize field-effect transistor special simultaneously
Property, by being biased voltage amplification photoelectric current, response time and the responsiveness of sensitive detection parts thus can be improved.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For Yuan, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (7)
1. a polarization sensitive photodetector based on metal phasmon structure thermoelectronic effect, it is characterised in that: bag
Include dielectric substrate (1), metal backing gate electrode (2), dielectric isolation layer (3), raceway groove active layer (4), drain electrode (5), source electrode (6) and etc.
From the plasmon resonance phasmon structure (7) to polarization sensitive, the material energy gap of described raceway groove active layer (4) be more than into
Penetrating the photon energy of light, phasmon structure (7) is metal Nano structure；Described dielectric substrate (1), metal backing gate electrode (2),
Dielectric isolation layer (3) and raceway groove active layer (4) set gradually from the bottom to top, and drain electrode (5) and source electrode (6) are arranged on raceway groove active layer
(4) left and right sides of upper surface, phasmon structure (7) is arranged on raceway groove active layer (4) upper surface and is positioned at drain electrode (5) and source
Between pole (6)；Utilize the thermoelectron in phasmon structure (7) to produce the strong depend-ence characteristic to incident light polarization state to realize
The detection of light polarization information.
Polarization sensitive photodetection based on metal phasmon structure thermoelectronic effect the most according to claim 1
Device, it is characterised in that: the material of described metal backing gate electrode (2) is gold, silver or aluminum.
Polarization sensitive photodetection based on metal phasmon structure thermoelectronic effect the most according to claim 1
Device, it is characterised in that: the gross thickness of described dielectric isolation layer (3) and raceway groove active layer (4) is less than 100nm.
Polarization sensitive photodetection based on metal phasmon structure thermoelectronic effect the most according to claim 1
Device, it is characterised in that: utilize thin-film technique to prepare metal backing gate electrode (2) at dielectric substrate (1) upper surface, at metal backgate electricity
Pole (2) upper surface utilizes magnetron sputtering, plasma reinforced chemical vapour deposition or electron beam evaporation process to prepare dielectric isolation layer
(3), SEMICONDUCTING THIN FILM TECHNOLOGY is utilized to prepare raceway groove active layer (4) at dielectric isolation layer (3) upper surface, in raceway groove active layer (4)
The left and right sides of upper surface utilizes thin-film technique preparation drain electrode (5) and source electrode (6), in raceway groove active layer (4) upper surface, drain electrode
(5) micro-nano technique and is utilized to prepare phasmon structure (7) between source electrode (6).
Polarization sensitive photodetection based on metal phasmon structure thermoelectronic effect the most according to claim 1
Device, it is characterised in that: the material of described dielectric substrate (1) is quartz or sapphire.
Polarization sensitive photodetection based on metal phasmon structure thermoelectronic effect the most according to claim 1
Device, it is characterised in that: described phasmon structure (7) periodically metal grating, periodically ╋ shape structure, periodically zero shape structure
Or periodicity shape structure, the material of phasmon structure (7) is gold, silver or aluminum.
Polarization sensitive photodetection based on metal phasmon structure thermoelectronic effect the most according to claim 1
Device, it is characterised in that: when incident illumination is visible ray, the material of raceway groove active layer (4) is ZnO or TiO2；When incident illumination light is
During infrared light, the material of raceway groove active layer (4) is silicon or germanium.
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018161734A1 (en) * | 2017-03-06 | 2018-09-13 | 东南大学 | Visible light waveband reflective metasurface device and reflected light wavelength modulation method |
| WO2018209654A1 (en) * | 2017-05-18 | 2018-11-22 | 中国科学院半导体研究所 | Monochromatic light wavelenth recognition device, system and method |
| CN109888051A (en) * | 2019-03-08 | 2019-06-14 | 中国科学院物理研究所 | A kind of X-ray detector and its manufacturing method |
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| CN110459632A (en) * | 2019-08-20 | 2019-11-15 | 中国科学院半导体研究所 | Flexible polarization optical detector and preparation method based on core-shell nano line |
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| CN113451881A (en) * | 2021-06-29 | 2021-09-28 | 南京大学 | Grid-shaped electrode enhanced surface plasmon laser and preparation method thereof |
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| CN114613872A (en) * | 2022-03-04 | 2022-06-10 | 北京工业大学 | Full-spectrum detection field effect transistor and preparation method thereof |
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| CN117174768A (en) * | 2023-11-02 | 2023-12-05 | 长春理工大学 | Detector, detector manufacturing method and wavefront correction method |
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