CN114899253A - Molybdenum disulfide photoelectric detector based on local surface plasmon effect - Google Patents
Molybdenum disulfide photoelectric detector based on local surface plasmon effect Download PDFInfo
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 52
- 230000000694 effects Effects 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 116
- 239000000463 material Substances 0.000 claims abstract description 37
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052709 silver Inorganic materials 0.000 claims abstract description 26
- 239000004332 silver Substances 0.000 claims abstract description 26
- 125000006850 spacer group Chemical group 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 82
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 239000002356 single layer Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 abstract description 19
- 238000010521 absorption reaction Methods 0.000 abstract description 16
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 238000000862 absorption spectrum Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The invention discloses a molybdenum disulfide photoelectric detector based on a local surface plasmon effect, which comprises: a substrate, a silver film reflecting layer and SiO which are arranged from bottom to top in sequence 2 Layer and MoS 2 A two-dimensional material layer; MoS 2 An insulating spacer layer, a first metal electrode and a second metal electrode are arranged on the surface of the two-dimensional material layer; and a plasmon structure array is deposited on the upper surface of the insulating spacer layer. The invention improves MoS through a plasmon structure array 2 The light absorption of the two-dimensional material layer to achieve a significant enhancement of the optical response of the device. Meanwhile, a silver film reflecting layer is added to enable the silver film reflecting layer to be connected with SiO 2 The layer forms a silver mirror structure, reflects incident light and further reducesThe light transmission of the device is improved, and MoS is greatly improved 2 The absorption efficiency of the photodetector for visible light. In addition, the metal nano cylindrical structure has smaller structural size, and can realize the absorption of light with different wave bands by adjusting the size, medium and other parameters.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric detection, and particularly relates to a molybdenum disulfide photoelectric detector based on a local surface plasmon effect.
Background
Photodetectors are important components of many functional devices in the present and future, and mainly function to convert received optical signals into electrical signals. Nowadays, in the aspects of biomedicine, video image processing, optical communication, motion monitoring, night vision and the like, the dependence of the photoelectric detector is continuously increased, meanwhile, greater requirements are also put on the photoelectric detector, the applications are also commercialized more and more widely and are integrated into the daily life of people, and therefore, the technology of the current photoelectric detector has great space needs to be promoted.
In recent years, two-dimensional materials have opened up new fields for fast and sensitive photodetectors by virtue of their excellent electrical and optical properties. The two-dimensional material can cover a wide spectrum range from ultraviolet light to infrared light, the surface of the material is naturally passivated, no dangling bond exists, and the layers are connected through weak van der Waals interlayer interaction, so that the two-dimensional material can be combined with various materials to form a heterojunction without being influenced by various substrates, does not have any limit of lattice mismatch in the traditional heterojunction, and can be used for manufacturing high-response, flexible and wearable devices. Wherein molybdenum disulfide (MoS) 2 ) The material has semiconductor property, high absorption, high current on-off ratio and high mobility in a visible light-near infrared light range, is rich in molybdenite and has high stability, so that the material becomes one of important materials for preparing a photoelectric detector.
Albeit MoS 2 Has a number of excellent properties for use in photodetectors, but a single layer MoS 2 The thickness of the atomic layer(s) is such that the absorption of light in the visible range is very low, and a single layer of MoS is obtained without additional conditions 2 The average absorption in the visible range is around 5%, which also acts as a barrier to single layer MoS 2 Or even a key factor in the development of two-dimensional materials.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a molybdenum disulfide photoelectric detector based on a local surface plasmon effect. The technical problem to be solved by the invention is realized by the following technical scheme:
a molybdenum disulfide photoelectric detector based on local surface plasmon effect comprises: a substrate, a silver film reflecting layer and SiO which are arranged from bottom to top in sequence 2 Layer and MoS 2 A two-dimensional material layer;
the MoS 2 An insulating spacer layer, a first metal electrode and a second metal electrode are arranged on the surface of the two-dimensional material layer;
the first metal electrode and the second metal electrode are positioned on the MoS 2 Two sides of the surface of the two-dimensional material layer;
the insulating spacer layer is positioned between the first metal electrode and the second metal electrode;
a plasmon structure array is deposited on the upper surface of the insulating spacer layer;
the plasmonic structure array, comprising: a plurality of metal nanocylinders arranged in sequence;
the distance between the centers of the two adjacent metal nano cylinders is equal.
In one embodiment of the present invention, the material of the metal nanocylinder is nanogold, nanosilver or nanoaluminum.
In one embodiment of the invention, the radius of the metal nano cylinder is 60 nm-120 nm.
In one embodiment of the invention, the thickness of the metal nanocylinder is 50 nm-110 nm.
In one embodiment of the invention, the distance between the centers of two adjacent metal nanocylinders is 300 nm-500 nm.
In one embodiment of the invention, the silver thin film reflecting layer is prepared by depositing a silver thin film by a vacuum thermal evaporation process.
In one embodiment of the invention, the substrate is single crystal silicon or sapphire.
In one embodiment of the invention, the first metal electrode and the second metal electrode are both the same in structure and material and are single-layer metal or double-layer metal;
wherein, the single-layer metal adopts metal gold;
the upper layer and the lower layer of the double-layer metal are metal chromium and metal gold, metal nickel and metal gold or metal titanium and metal gold.
In one embodiment of the invention, the SiO 2 The thickness of the layer was 340 nm.
In one embodiment of the invention, the insulating spacer layer is SiO with a thickness of 2.5nm 2 。
The invention has the beneficial effects that:
in the invention, the product is mixed with MoS 2 The plasmon structure array integrated by the two-dimensional material layer is used as an optical antenna on the two-dimensional material, and the electric field intensity around the metal nano cylindrical structure can be effectively increased in a strong near field enhancing mode, so that the light absorption around the metal nano cylindrical structure is greatly improved. MoS enhancement by plasmonic structure array 2 The light absorption of the two-dimensional material layer to achieve a significant enhancement of the optical response of the device. Meanwhile, a silver film reflecting layer is added to enable the silver film reflecting layer to be connected with SiO 2 The layer forms a silver mirror structure to reflect incident light, further reduces the light transmission of the device, and greatly improves MoS 2 The absorption efficiency of the photodetector for visible light. In addition, the metal nano cylindrical structure has smaller structural size, and can realize the absorption of light with different wave bands by adjusting the size, medium and other parameters.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a molybdenum disulfide photodetector based on a local surface plasmon effect according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional structure diagram of a molybdenum disulfide photodetector based on a local surface plasmon effect according to an embodiment of the present invention;
FIG. 3 shows a molybdenum disulfide photodetector and a MoS based on the localized surface plasmon effect according to an embodiment of the present invention 2 The two-dimensional material layers are differentA graph of light absorption intensity at wavelength;
fig. 4 is a schematic diagram of light absorption intensity of a molybdenum disulfide photodetector based on a local surface plasmon effect under different metal nano-cylinder radii according to an embodiment of the present invention;
fig. 5 is a schematic diagram of light absorption intensities of a molybdenum disulfide photodetector based on a local surface plasmon effect under different thicknesses of metal nanocylinders according to an embodiment of the present invention;
fig. 6 is a schematic view of light absorption intensity of a molybdenum disulfide photodetector based on a local surface plasmon effect in different metal nano-cylinder array periods according to an embodiment of the present invention.
Description of the reference numerals
10-a substrate; 20-a silver thin film reflective layer; 30-SiO 2 A layer; 40-MoS 2 A two-dimensional material layer; 50-an insulating spacer layer; 61-a first metal electrode; 62-a second metal electrode; 70-metal nanocylinders.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
As shown in fig. 1 and fig. 2, a molybdenum disulfide photodetector based on the localized surface plasmon effect includes: a substrate 10, a silver thin film reflecting layer 20 and SiO which are arranged from bottom to top in sequence 2 Layer 30 and MoS 2 A two-dimensional material layer (molybdenum disulfide two-dimensional material layer) 40.
MoS 2 The surface of the two-dimensional material layer 40 is provided with an insulating spacer layer 50, a first metal electrode 61 and a second metal electrode 62; the first metal electrode 61 and the second metal electrode 62 are located at MoS 2 On both sides of the surface of the two-dimensional material layer 40. The insulating spacer layer 50 is located between the first metal electrode 61 and the second metal electrode 62.
An array of plasmonic structures is deposited on the upper surface of the insulating spacer layer 50. The array of plasmonic structures comprises: a plurality of metal nanocylinders 70 sequentially disposed at intervals. The distance between the centers of two adjacent metal nanocylinders 70 is equal.
The true bookIn the examples, MoS 2 The two-dimensional material layer 40 is a single layer of MoS 2 One bottom surface of the metal nano cylinder 70 is in contact with the upper surface of the insulating spacer layer 50, the metal nano cylinder 70 is distributed on the upper surface of the insulating spacer layer 50 along the X-axis and Y-axis directions in the horizontal plane according to a certain period to form a plasmon structure array, the detector is placed in air or vacuum, incident light is plane wave, the light source is directly above the whole detector, and a certain included angle is formed between the incident direction and the upper plane of the insulating spacer layer 50. Incident light is incident from the upper part of the device and penetrates through the plasmon structure array to reach SiO 2 Layer 30, and silver thin film reflective layer 20, are reflected by the structure back into the array of plasmonic structures for re-absorption.
The working principle of the invention is as follows: the incident plane wave and the Z-axis direction of the upper surface have certain angle incidence, and under the action of incident light, the plasmon structure array generates a strong local plasmon resonance effect, so that the electric field intensity around the metal nano cylinder 70 structure can be effectively increased in a strong near field enhancing mode, and the light absorption around the metal nano cylinder 70 structure is greatly improved. Specifically, an electric field parallel to the Z-axis is generated in the array, so that strong coupling resonance can be excited, and a specific absorption peak is generated for incident light with a specific wavelength under specific structural parameters, compared with a single-layer MoS without plasmon 2 Photodetectors have a higher quality factor. The coupling wavelength and the absorption peak of the structure can be adjusted by changing the structural parameters of the metal nanocylinders 70 and the period between the metal nanocylinders 70 (the distance between the centers of two adjacent metal nanocylinders 70), and the absorption peak can also be dynamically adjusted by changing the incident light angle.
In the invention, the single-layer MoS is obviously improved by exciting the local surface plasmon resonance effect 2 The light absorption efficiency of the photoelectric detector is improved, and the silver film reflecting layer 20 is added to be matched with SiO 2 Layer 30 forms a silver mirror structure that reflects incident light, further reducing the light transmission of the device, and greatly increasing the single-layer MoS 2 The absorption efficiency of the photodetector for visible light. In addition, the metal nanocylinder 70 has a small structural size and is capable of displayingThe size of the device is reduced. Wherein, the optical parameters such as resonance wavelength, bandwidth, absorption rate, etc. can be changed by changing the specific size parameters and array period of the metal nanocylinder 70, and the resonance wavelength can be dynamically adjusted in a wider range. Moreover, the metal nanocylinder 70 has a simple structure and is easy to process.
Further, the metal nanocylinder 70 is made of nanogold, nanosilver or nano aluminum.
Further, the radius of the metal nanometer cylinder 70 is 60 nm-120 nm. For optimum characteristics at the desired wavelength, the radius r is preferably 80 nm.
Further, the thickness of the metal nanocylinder 70 is 50nm to 110 nm. For optimum characteristics at the desired wavelength, the thickness h is preferably 90 nm.
Further, the distance between the centers of two adjacent metal nanocylinders 70 is 300 nm-500 nm. For optimum characteristics at the desired wavelength, the distance p is preferably 450 nm.
Further, the silver thin film reflective layer 20 is prepared by depositing a silver thin film by a vacuum thermal evaporation process. Specifically, the silver thin film reflective layer 20 is a metal thin film deposited by a high vacuum thermal evaporation technique, and the thickness of the silver thin film reflective layer 20 is 300nm in this embodiment.
Further, the substrate 10 is single crystal silicon or sapphire.
Preferably, SiO 2 The thickness of layer 30 is 340 nm. The insulating spacer layer 50 is SiO 2.5nm thick 2 。
Further, the first metal electrode 61 and the second metal electrode 62 are both made of the same material and structure, and are made of a single-layer metal or a double-layer metal. First metal electrode 61 and second metal electrode 62 and MoS 2 The two-dimensional material layer 40 is in ohmic contact.
When the first metal electrode 61 and the second metal electrode 62 are both single-layer metal structures, metal gold is used.
When the first metal electrode 61 and the second metal electrode 62 are both of a double-layer metal structure, the upper layer and the lower layer of metal of the metal electrodes are metal chromium and metal gold, or the upper layer and the lower layer of metal are metal nickel and metal gold, or the upper layer and the lower layer of metal are metal titanium and metal gold. Preferably, the upper and lower layer metals are metallic titanium and metallic gold.
As shown in FIG. 3, the reflective layer 20 is formed by adding a silver thin film and is in contact with SiO 2 Layer 30 constitutes a silver mirror structure and the light transmission of the detector is greatly reduced. Meanwhile, under the action of plasmons, a local electric field of the detector is greatly enhanced, so that the device has high light absorption efficiency. As can be seen from the absorption spectrum, the MoS of the invention 2 The photodetector has a narrow bandwidth with an overall light absorption efficiency of approximately 100% at an incident wavelength of 650nm, and MoS 2 The two-dimensional material layer 40 has an absorption efficiency of 72% and has a high quality as a photodetector.
When the metal nanocylinder 70 adopts nanogold, and when the radius r of the metal nanocylinder 70 is changed within the range of 60nm to 120nm, the absorption spectrum of the obtained device is shown in fig. 4; when the thickness h of the metal nano cylinder 70 is changed within the range of 50 nm-110 nm, the absorption spectrum of the obtained device is as shown in figure 5; when the array period of the metal nanocylinder 70 is changed in the range of 300nm to 500nm, the absorption spectrum of the obtained device is shown in fig. 6. In the figure, the control group is the absorption spectrum of the detector without the plasmon structure array.
Fig. 4 shows absorption spectrograms of the four detectors when the radii r of the gold nanopillars of the four detectors are r =60nm, 80nm, 100nm and 120nm, respectively, and other parameters of the control group and the four detectors are the same. The abscissa of the graph is the wavelength of the incident plane light, and the ordinate represents the absorption of the incident plane wave, i.e. the percentage of the incident light, by the structure. It can be seen from the figure that different radii for MoS are the same under otherwise identical conditions 2 The effect of (2) is mainly reflected in the enhancement of light absorption, the position of the coupling wavelength of the structure is not obvious, the light absorption of a 60-120 nm radius structure is increased firstly and then reduced in a certain range, and the main reason is that the distance between gold nano cylinders in the range is reduced, the local plasmon resonance between the gold nano cylinders is weakened, and the structure has the maximum light absorption under the incident wavelength of 600nm when the radius is 80 nm.
FIG. 5 shows absorption spectra of four detectors with thickness h of 50nm, 70nm, 90nm, and 110nm, respectively, and other parameters of the control group and the four detectors are the same. It can be seen from the figure that the coupling wavelength of the device decreases with increasing thickness, i.e. shows a certain blue shift. The device has the maximum coupling wavelength at h =50nm and also has the minimum light absorption; at h =110nm, the device has maximum light absorption, while the coupling wavelength is at a minimum. Preferably, the thickness is 90nm as the thickness of the gold nanocylinder.
Fig. 6 shows absorption spectrograms of four detectors when the periods (the distances between the centers of two adjacent gold nanocylinders) of the plasmon structure array are 50nm, 70nm, 90nm and 110nm, respectively, and other parameters of the control group and the four detectors are the same. From the graph, it can be derived that the array period is for MoS 2 The absorption influence of (2) is small, the absorption power ratio of the structure with the period of 300-500 nm is in the trend of increasing first and then decreasing, and the coupling wavelength of the structure has small red shift along with the increase of the wavelength. Preferably, the array period is 450nm as the period of the plasmonic structure array.
In one embodiment, the present invention is based on MoS of local surface plasmon effect 2 The preparation method of the photoelectric detector comprises the following steps:
step one, manufacturing a substrate 10;
step two, depositing a silver film reflecting layer 20 on the substrate 10;
step three, continuing to grow SiO on the silver film reflecting layer 20 2 A layer 30;
step four, adopting a mechanical transfer method to transfer the single-layer MoS 2 The two-dimensional material layer 40 is transferred to SiO 2 Over the layer 30;
fifthly, forming a plasmon structure array of the metal nanometer cylinder 70 structure by utilizing an inductive coupling plasma etching process;
and step six, preparing a first metal electrode 61 and a second metal electrode 62.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A molybdenum disulfide photoelectric detector based on local surface plasmon effect, comprising: a substrate (10), a silver film reflecting layer (20), and SiO sequentially arranged from bottom to top 2 Layer (30) and MoS 2 A two-dimensional material layer (40);
the MoS 2 An insulating spacer layer (50), a first metal electrode (61) and a second metal electrode (62) are arranged on the surface of the two-dimensional material layer (40);
the first metal electrode (61) and the second metal electrode (62) are located at the MoS 2 Two sides of the surface of the two-dimensional material layer (40);
the insulating spacer layer (50) is located between the first metal electrode (61) and the second metal electrode (62);
a plasmon structure array is deposited on the upper surface of the insulating spacer layer (50);
the plasmonic structure array, comprising: a plurality of metal nanocylinders (70) arranged in sequence;
the distance between the centers of two adjacent metal nano cylinders (70) is equal.
2. The molybdenum disulfide photoelectric detector based on the local surface plasmon effect of claim 1, wherein the metal nanocylinder (70) is made of nanogold, nanosilver or nano aluminum.
3. The molybdenum disulfide photoelectric detector based on the local surface plasmon effect of claim 1, wherein the radius of the metal nanocylinder (70) is 60 nm-120 nm.
4. The molybdenum disulfide photoelectric detector based on the local surface plasmon effect according to claim 1, wherein the thickness of the metal nanocylinder (70) is 50nm to 110 nm.
5. The molybdenum disulfide photoelectric detector based on the local surface plasmon effect according to claim 1, wherein the distance between the centers of two adjacent metal nanocylinders (70) is 300 nm-500 nm.
6. The molybdenum disulfide photoelectric detector based on the local surface plasmon effect according to claim 1, wherein the silver thin film reflecting layer (20) is prepared by depositing a silver thin film by a vacuum thermal evaporation process.
7. The molybdenum disulfide photodetector based on the localized surface plasmon effect of claim 1, wherein said substrate (10) is single crystal silicon or sapphire.
8. The molybdenum disulfide photoelectric detector based on the local surface plasmon effect according to claim 1, wherein the first metal electrode (61) and the second metal electrode (62) are both the same in structure and material and are single-layer metal or double-layer metal;
wherein, the single-layer metal adopts metal gold;
the upper layer and the lower layer of the double-layer metal are metal chromium and metal gold, metal nickel and metal gold or metal titanium and metal gold.
9. The molybdenum disulfide photodetector based on local surface plasmon effect of claim 1, wherein said SiO is 2 The thickness of the layer (30) is 340 nm.
10. The molybdenum disulfide photodetector based on local surface plasmon effect as claimed in claim 1, wherein said insulating spacer layer (50) is SiO 2.5nm thick 2 。
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