CN213069242U - Light absorber - Google Patents
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- CN213069242U CN213069242U CN202021936002.9U CN202021936002U CN213069242U CN 213069242 U CN213069242 U CN 213069242U CN 202021936002 U CN202021936002 U CN 202021936002U CN 213069242 U CN213069242 U CN 213069242U
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 52
- 150000003624 transition metals Chemical class 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000002161 passivation Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000003491 array Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
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- 238000004364 calculation method Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
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- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
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- 229910000510 noble metal Inorganic materials 0.000 description 1
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- 229910052711 selenium Chemical group 0.000 description 1
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Abstract
The utility model discloses a light absorber relates to photoelectric material technical field, under the condition that reaches the perfect absorption effect of the light in the working frequency band, reduces the complexity of its size strictness design, saves time and computational cost. The utility model provides a light absorber includes basement, metal reflector layer, passivation layer, semiconductor rete, metal rete from bottom to top in proper order, still is equipped with the transition metal rete between passivation layer and the semiconductor rete, and the material on transition metal rete is the two-dimensional plane material, and has the semiconductor characteristic. The utility model is used for absorb light wave energy.
Description
Technical Field
The utility model relates to a photoelectric material technical field especially relates to a light absorber.
Background
The optical absorber is a necessary element for realizing high-efficiency spectral absorption and photoelectric detection, can realize the absorption of light wave energy in a specific wave band or a plurality of wave band spectral ranges, and generally has the principle that the phenomena of plasmon resonance, medium guided wave mode, spectral phase coupling or coherence and the like cause the resonant absorption or capture phenomenon of light waves.
The novel micro-nano photon absorber has great application value in the directions of stealth, sensing, thermal imaging, detection, photovoltaic industry, communication and the like, and becomes a great research hotspot of novel micro-nano devices. The so-called absorption, the percentage of the incident electromagnetic wave that is converted into other forms of energy by the device, is computationally straightforward to represent the incident minus the reflected and transmitted portions (both in percentages). Therefore, when designing the device, the incident light should exchange energy with the device as much as possible to reduce the energy of the reflected echo and the transmitted wave. Structures with oxide media combined with noble metals and semiconductors are generally able to perform this function at the micro and nano scales, so most designs have been developed around this idea.
At present, in the design of the metal-semiconductor-oxide structure, it is necessary to continuously try and make mistakes to find the most perfect impedance matching point, i.e. the perfect thickness or the lateral dimension of the structure, so as to achieve the perfect absorption effect. However, the requirement for the structure size to achieve the perfect absorption effect is very strict, so that a great amount of calculation and waiting time are added for researchers, the computational resources are unreasonably occupied and wasted to a certain extent, and the cost is too high.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a light absorber, under the condition that reaches the perfect absorption effect of the light in the operating frequency band, reduces the complexity of its size rigor design, saves time and computational cost.
In order to achieve the above object, an embodiment of the present invention provides a light absorber, which sequentially comprises a substrate, a metal reflective layer, a passivation layer, a semiconductor film layer and a metal film layer from bottom to top, wherein a transition metal film layer is further disposed between the passivation layer and the semiconductor film layer, and the material of the transition metal film layer is a two-dimensional planar material and has semiconductor characteristics.
Optionally, the transition metal film layer is one or a combination of a molybdenum disulfide metal film layer, a molybdenum diselenide metal film layer, a tungsten disulfide metal film layer, or a tungsten diselenide metal film layer.
Furthermore, the thickness of the transition metal film layer is 0.626 nm-1.252 nm.
Optionally, the transition metal film layer, the semiconductor film layer and the metal film layer are sequentially stacked to form a cylinder disposed on the upper surface of the passivation layer.
Optionally, the number of the cylinders formed by sequentially stacking the transition metal film layer, the semiconductor film layer and the metal film layer is multiple, and the multiple periodic arrays of the cylinders are arranged on the upper surface of the passivation layer.
Furthermore, the diameter of the cylinder is 150 nm-300 nm.
Furthermore, the thickness of the semiconductor film layer is 20 nm-40 nm.
Optionally, the substrate is one or more of silicon wafer, glass or PMMA.
Optionally, the passivation layer is one or a combination of more of a silicon dioxide dielectric film layer, a magnesium fluoride dielectric film layer or an aluminum oxide dielectric film layer.
Optionally, the semiconductor film layer is one or a combination of a gallium arsenide film layer, a silicon film layer, an indium phosphide film layer and an indium arsenide film layer.
The embodiment of the utility model provides a light absorber is provided with the transition metal rete between passivation layer and semiconductor rete, and the material of transition metal rete is two-dimentional planar material, and has the semiconductor characteristic. The two-dimensional plane material has excellent field-bound capacity and propagation characteristic in the research of combining with the dielectric layer, and has extremely high quality factor and excellent integration level. That is to say, the semiconductor transition metal film layer of two-dimensional planar material sets up on the passivation layer, can form stronger surface plasmon effect between transition metal film layer and the passivation layer, can effectively strengthen the energy interaction with the incident light, promotes the absorptivity of the light in the working band. As can be seen from the above, the light absorber of the embodiment of the present invention has a higher absorption rate of light in the operating frequency band in accordance with the size of the light absorber in the related art. Under the condition that reaches the perfect absorption effect of the light in the working frequency band, compare with prior art, the utility model discloses the light absorber can effectively reduce the complexity of its size rigor degree design, changes the size slightly, can realize the perfect absorption of the light in the working frequency band in the short time, has saved time and computational cost greatly.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a light absorber according to an embodiment of the present invention;
fig. 2 is a front view of a light absorber provided in an embodiment of the present invention;
FIG. 3 is a top view of FIG. 2;
FIG. 4 is a graph showing simulation results of absorption, reflection and transmission spectra of a control light absorber without a transition metal film layer;
FIG. 5 is a graph of simulation results of absorption, reflection, and transmission spectra of the light absorber of FIG. 3 at a first size;
FIG. 6 is a graph of simulation results of absorption, reflection, and transmission spectra of the light absorber of FIG. 3 at a second size;
FIG. 7 is a graph of simulation results of the absorption, reflection, and transmission spectra of the light absorber of FIG. 3 at a third size;
fig. 8 is a graph of simulation results of absorption spectra of the light absorber of fig. 7 for incident light of different polarization angles.
Reference numerals:
1-a substrate; 2-a metal reflective layer; 3-a passivation layer; 4-a transition metal film layer; 5-a semiconductor film layer; 6-metal film layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, are not to be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; the specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
The embodiment of the utility model provides a light absorber, as shown in fig. 1 and fig. 2, include basement 1, metal reflector layer 2, passivation layer 3, semiconductor rete 5, metal rete 6 from bottom to top in proper order, still be equipped with transition metal rete 4 between passivation layer 3 and the semiconductor rete 5, the material of transition metal rete 4 is two-dimensional plane material, and has the semiconductor characteristic.
The embodiment of the utility model provides a light absorber, as shown in fig. 1 and fig. 2, be provided with transition metal rete 4 between passivation layer 3 and semiconductor rete 5, the material of transition metal rete 4 is two-dimentional planar material, and has the semiconductor characteristic. The two-dimensional plane material has excellent field-bound capacity and propagation characteristic in the research of combining with the dielectric layer, and has extremely high quality factor and excellent integration level. That is to say, the semiconductor transition metal film layer 4 of two-dimensional planar material sets up on the passivation layer 3, can form stronger surface plasmon effect between transition metal film layer 4 and the passivation layer 3, can effectively strengthen the energy interaction with the incident light, promotes the absorptivity of the light in the working band. As can be seen from the above, the light absorber of the embodiment of the present invention has a higher absorption rate of light in the operating frequency band in accordance with the size of the light absorber in the related art. Under the condition that reaches the perfect absorption effect of the light in the working frequency band, compare with prior art, the utility model discloses the light absorber can effectively reduce the complexity of its size rigor degree design, changes the size slightly, can realize the perfect absorption of the light in the working frequency band in the short time, has saved time and computational cost greatly.
When light waves (electromagnetic waves) enter a boundary surface between metal and a medium, free electrons on the surface of the metal oscillate collectively, the electromagnetic waves and the free electrons on the surface of the metal are coupled to form a near-field electromagnetic wave which propagates along the surface of the metal, if the oscillation frequency of the electrons is consistent with the frequency of the incident light, resonance is generated, and the energy of the electromagnetic field is effectively converted into the collective vibration energy of the free electrons on the surface of the metal in the resonance state, so that a special electromagnetic mode is formed: the electromagnetic field is confined to a small range of the metal surface and enhanced, and this phenomenon is called a surface plasmon phenomenon.
Here, the material of the transition metal film layer 4 is a transition metal of a two-dimensional planar material, and in particular, disulfide or diselenide of molybdenum and tungsten, which can exhibit semiconductor characteristics, that is, MX2Wherein M is molybdenum or tungsten and X is sulfur or selenium. Illustratively, the transition metal film layer 4 is one or more of a molybdenum disulfide metal film layer, a molybdenum diselenide metal film layer, a tungsten disulfide metal film layer, or a tungsten diselenide metal film layer. Thus, under a specific frequency band and a proper size, the absorption rate of light in an operating frequency band can be greatly enhanced.
In addition, the thickness of the transition metal film layer 4 is 0.626nm to 1.252nm, that is, the transition metal film layer 4 is a two-dimensional plane material or two-dimensional plane materials, for example, the transition metal film layer 4 is a transition metal film layer 4 formed by a layer of molybdenum disulfide; for another example, the transition metal film layer 4 is a transition metal film layer 4 formed by two layers of molybdenum disulfide; for another example, the transition metal film layer 4 is a transition metal film layer 4 formed by tungsten disulfide. Preferably, the transition metal film layer 4 is a transition metal film layer 4 formed by a layer of molybdenum disulfide, so that the light absorption rate in the working frequency band can be greatly improved.
In some embodiments, as shown in fig. 1 and 2, the transition metal film layer 4, the semiconductor film layer 5, and the metal film layer 6 are sequentially stacked to form a cylinder disposed on the upper surface of the passivation layer 3. At this time, the transition metal film layer 4, the semiconductor film layer 5, and the metal film layer 6 are sequentially stacked to form a cylinder, that is, the transition metal film layer 4, the semiconductor film layer 5, and the metal film layer 6 are all cylindrical, and the diameter of the transition metal film layer 4, the diameter of the semiconductor film layer 5, and the diameter of the metal film layer 6 are equal. At this moment, because transition metal rete 4, semiconductor rete 5, metal rete 6 pile up the spatial structure's that forms in proper order design has the symmetry characteristic, so can guarantee that the absorptivity of the incident light of different polarization directions changes very little, and highest absorptivity and high absorption spectrum width all maintain at extremely stable level, avoid producing the inhomogeneous problem of absorptivity of the incident light of different polarization directions, promptly the utility model discloses the light absorber has the polarization insensitivity. Of course, the structure formed by sequentially stacking the transition metal film layer 4, the semiconductor film layer 5, and the metal film layer 6 may also be other three-dimensional structures with symmetric characteristics, such as a hexagonal prism, a cube, or a rectangular parallelepiped, which is not illustrated here.
Furthermore, the number of cylinders formed by sequentially stacking the transition metal film layers 4, the semiconductor film layers 5 and the metal film layers 6 is multiple, and the multiple cylinder periodic arrays are arranged on the upper surface of the passivation layer 3, so that the periodic parameters of the arrays can be optimized by an electromagnetic field numerical analysis method, and the optical resonance spectrum generated by the cylinder arrays is overlapped with the incident light spectrum in a frequency domain, so that strong resonance coupling is obtained, reflection loss is suppressed, the light absorption rate is further improved, and the perfect absorption of near 100% light is obtained. For example, the number of the above-mentioned columns is 6, and the columns are arranged in an array of two rows and three columns on the upper surface of the passivation layer 3.
Here, the diameter of the cylinder is usually from 150nm to 300 nm; the thickness of the semiconductor film layer 5 is 20nm to 40nm, so that the wavelength of the absorbable light substantially covers 390nm to 780nm, that is, the absorbable wavelength is in the visible light and near infrared region.
The substrate 1 is used for supporting the light absorber, and the substrate 1 may be one or more combinations of silicon wafer, glass or PMMA (Polymethyl Methacrylate) according to different requirements, but is not limited thereto. The metal reflective layer 2 may be a continuous metal film, for example, the metal reflective layer 2 may be a metal film made of one or more of gold, silver, copper, aluminum or platinum, but is not limited thereto. The passivation layer 3 mainly plays a role of insulation passivation, and the passivation layer 3 may be one or a combination of more than one of a silicon dioxide dielectric film layer, a magnesium fluoride dielectric film layer, or an aluminum oxide dielectric film layer, but is not limited thereto. Similarly, the metal film layer 6 may be a continuous metal film, and the metal film layer 6 may be a metal film made of one or more of gold, silver, copper, aluminum, or platinum, but is not limited thereto. The semiconductor film layer 5 is usually made of a material with a high refractive index, for example, the semiconductor film layer 5 is one or a combination of gallium arsenide film layer, silicon film layer, indium phosphide film layer and indium arsenide film layer, but not limited thereto.
In order to more clearly illustrate the beneficial effects that the embodiment of the present invention provides can obtain, the embodiment of the present invention provides a light absorber, and the following will provide the embodiment of the present invention with a contrast light absorber to perform simulation contrast.
FIG. 4 is a graph showing simulation results of absorption, reflection and transmission spectra of a control light absorber without a transition metal film layer; FIG. 5 is a graph of simulation results of absorption, reflection, and transmission spectra of a light absorber in some embodiments.
In the comparative light absorber, the structure shown in fig. 2 and 3 was followed, but the transition metal film layer was not provided. Wherein Px is 500nm, D is 260nm, the substrate is a silicon chip, and the thickness of the substrate is 220 nm; the metal reflecting layer is made of silver, and the thickness of the metal reflecting layer is 100 nm; the passivation layer is silicon dioxide, and the thickness of the passivation layer is 75 nm; the semiconductor film layer is gallium arsenide, and the thickness of the semiconductor film layer is 26 nm; the metal film layer is gold and has a thickness of 20 nm. At this time, as shown in fig. 4, the simulation calculation result shows that the maximum Abs (absorbance) reaches 62% and does not exceed 80% near 650 nm; the spectral width of the Abs exceeding 40% is approximately 100 nm.
According to the structure shown in fig. 2 and fig. 3, Px ═ Py ═ 500nm, D ═ 260nm, the substrate 1 is a silicon wafer with a thickness of 220 nm; the metal reflecting layer 2 is made of silver, and the thickness of the metal reflecting layer is 100 nm; the passivation layer 3 is silicon dioxide with the thickness of 75 nm; the semiconductor film layer 5 is gallium arsenide, and the thickness of the semiconductor film layer is 26 nm; the metal film layer 6 is gold and has a thickness of 20 nm. The transition metal film layer 4 between the passivation layer 3 and the semiconductor film layer 5 is molybdenum disulfide, and the thickness of the transition metal film layer is 1 nm. At this time, as shown in fig. 5, in the vicinity of 663nm, the maximum Abs value reaches 96%, the spectral width of Abs exceeding 80% is about 23nm, the spectral width of Abs exceeding 50% is about 74nm, and the figure of merit is about 8.97. The spectral width of the Abs exceeding 40% is approximately 150 nm. Therefore, each index of the whole absorption spectrum is greatly optimized after the transition metal film layer 4 formed by molybdenum disulfide is added, and the maximum value of the light absorption rate is obviously improved.
The quality factor is a ratio of a resonance wavelength to a spectral width of which Abs exceeds 50%, where the resonance wavelength is a wavelength corresponding to an Abs peak, that is, a coordinate value of the abscissa axis in fig. 5.
The thickness of the semiconductor film 5 made of gallium arsenide is further adjusted according to the structures shown in fig. 2 and 3 to achieve a perfect absorption of light in the operating frequency band. First, the gallium arsenide thickness was adjusted to 28 nm. The simulation calculation result is shown in fig. 6, and at 664nm, the maximum Abs value reaches 97%, the spectral width of the Abs exceeding 80% is about 24nm, the spectral width of the Abs exceeding 50% is about 75nm, and the quality factor is about 8.85. Here, the thickness of the semiconductor film layer 5 made of gallium arsenide is adjusted again so that the thickness of the semiconductor film layer 5 made of gallium arsenide is adjusted to 30 nm. In this case, as shown in FIG. 7, the simulated calculation results show that the Abs reaches 99% at 667nm, the spectral width of more than 80% of the Abs is 27nm, the spectral width of more than 50% of the Abs is 70nm, and the figure of merit is about 9.53. So far, the perfect absorption in the real sense can be realized under the condition that the cylinders formed by sequentially stacking the transition metal film layer 4, the semiconductor film layer 5 and the metal film layer 6 are not required to be subjected to array distribution and array period control.
In addition, in order to verify that the light absorber of the embodiment of the present invention has polarization insensitivity, i.e. the variation of the absorption rate of the incident light with different polarization directions is very small, the maximum absorption rate and the high absorption spectrum width of the incident light with different polarization directions can be maintained at very stable levels, the following simulation comparisons are performed on the incident light with polarization angles of 0 °, 30 °, 60 ° and 90 ° in sequence, wherein the structure of the light absorber is exemplified by the structure and the size of the light absorber for realizing the perfect absorption in the true sense, the simulation calculation result is shown in fig. 8, when incident light polarization direction changed to 90 from 0, the absorptivity of light changed very little, and the spectral width of highest absorptivity and high absorptivity all maintains at utmost stable level, and the absorptivity of the incident light of different polarization directions can not produce inhomogeneous phenomenon, consequently, the utility model discloses the light absorber has polarization insensitivity.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above embodiments are only specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention, and all should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. The light absorber sequentially comprises a substrate, a metal reflecting layer, a passivation layer, a semiconductor film layer and a metal film layer from bottom to top, and is characterized in that a transition metal film layer is further arranged between the passivation layer and the semiconductor film layer, and the transition metal film layer is made of a two-dimensional plane material and has semiconductor characteristics.
2. The light absorber of claim 1, wherein the transition metal film layer is one of a molybdenum disulfide metal film layer, a molybdenum diselenide metal film layer, a tungsten disulfide metal film layer, or a tungsten diselenide metal film layer.
3. The light absorber of claim 1, wherein the transition metal film layer has a thickness of 0.626nm to 1.252 nm.
4. The light absorber of claim 1, wherein the transition metal film layer, the semiconductor film layer, and the metal film layer are stacked in sequence to form a cylinder disposed on an upper surface of the passivation layer.
5. The light absorber of claim 4, wherein the number of the cylinders formed by sequentially stacking the transition metal film layer, the semiconductor film layer and the metal film layer is plural, and a plurality of the periodic arrays of the cylinders are disposed on an upper surface of the passivation layer.
6. The light absorber of claim 4, wherein the diameter of the cylinder is between 150nm and 300 nm.
7. The light absorber of claim 6, wherein the semiconductor film layer has a thickness of 20nm to 40 nm.
8. The light absorber of claim 1 wherein the substrate is one of silicon, glass, or PMMA.
9. The light absorber of claim 1, wherein the passivation layer is one of a silicon dioxide dielectric film layer, a magnesium fluoride dielectric film layer, or an aluminum oxide dielectric film layer.
10. The light absorber of claim 1, wherein the semiconductor film layer is one of a gallium arsenide film layer, a silicon film layer, an indium phosphide film layer, or an indium arsenide film layer.
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|---|---|---|---|
| CN202021936002.9U CN213069242U (en) | 2020-09-07 | 2020-09-07 | Light absorber |
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| CN202021936002.9U CN213069242U (en) | 2020-09-07 | 2020-09-07 | Light absorber |
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| CN213069242U true CN213069242U (en) | 2021-04-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114899253A (en) * | 2022-07-12 | 2022-08-12 | 西安电子科技大学 | Molybdenum disulfide photoelectric detector based on local surface plasmon effect |
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