CN104766902B - Infrared light detecting transistor based on graphene carbon nano tube composite absorption layer - Google Patents
Infrared light detecting transistor based on graphene carbon nano tube composite absorption layer Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 174
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 107
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 55
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 53
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 39
- 239000002131 composite material Substances 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 135
- 239000000463 material Substances 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000001336 alkenes Chemical class 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 239000002079 double walled nanotube Substances 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910021404 metallic carbon Inorganic materials 0.000 claims description 2
- 239000002048 multi walled nanotube Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 13
- 229910052799 carbon Inorganic materials 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 238000005286 illumination Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 125000002769 thiazolinyl group Chemical group 0.000 description 1
- -1 thickness are 300nm) Chemical compound 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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Abstract
The invention provides an infrared light detecting transistor based on a graphene carbon nano tube composite absorption layer. The transistor comprises a grid electrode metal layer, a substrate, a grid electrode medium layer and a graphene/carbon nano tube composite absorption layer which are sequentially arranged from top to bottom. The graphene/carbon nano tube composite absorption layer is composed of at least one graphene layer and at least one carbon nano tube layer. In addition, the at least one graphene layer is in contact with the grid electrode medium layer. The two ends of the graphene layer are provided with a source electrode and a drain electrode respectively. The carbon nano tube layer in the graphene/carbon nano tube composite absorption layer is arranged between the source electrode and the drain electrode. The carbon nano tube layer is not in contact with the source electrode and the drain electrode. The infrared light detecting transistor is sensitive to infrared light, and is applicable to the fields such as wire or wireless communication, sensing and monitoring.
Description
Technical field
The present invention is related to a kind of infrared light detecting transistor based on graphene carbon nanotube composite absorption layer, belongs to red
Outer optical detector technology field.
Background technology
As infrared light detecting technology is in the extensive application in the field such as military, civilian, with high sensitivity, high s/n ratio
Infrared detector becomes the focus that people chase, and its detection principle is the opto-electronic conversion performance using material, by infra-red radiation
Photon signal be converted to electronic signal, combine with external circuit reach detection infrared signal target.
Graphene is a kind of carbon atom with sp2Hybrid orbital presses the monoatomic layer thin film of benzene type arrangement, and which has biography
The incomparable advantage of commons material：Electron mobility on substrate during Graphene room temperature is up to 60000cm2/V·s.It is prior
It is that Graphene can have significantly absorption to the ultraviolet light to mid-infrared, be outstanding width due to linear band dispersion
Band light absorbent.And as Graphene is a kind of two-dimensional film of only one of which carbon atomic layer thickness, when there are other materials on its surface
During material, the conductance of Graphene is very sensitive to the electrostatic disturbances of the photo-generated carrier of other materials.According to light selection effect
(Photogating effect), is expected to prepare superelevation gain photo-detector using Graphene.Additionally, although Graphene is very thin,
But its pliability is good, large-area graphene can be prepared on other substrates such as Si, Kim seminar in 2010 (Bae, S., H.Kim,
et al.(2010)."Roll-to-roll production of 30-inch graphene films for
transparent electrodes."Nature nanotechnology 5(8):574-578) report realizes 30inch stones
The preparation transfer of black alkene.This advantage be expected to so that graphene-based device be integrated in maturation Si base integrated circuits on, Jin Erying
For Monolithic Integrated Optoelectronic Circuits, image recognition and remotely control are more beneficial for, and optical detection equipment volume can be reduced.
However, as Graphene is very thin, its absorptance only about 2.3% causes the intrinsic photoresponse of Graphene low by (≤1
×10-2mA·W-1).There is seminar to optimize the structure design of device, such as：Prepare with 5 × 5mm2The graphite of light absorbs area
Thiazolinyl p-n vertical heterojunctions (Kim, C.O.et al.High photoresponsivity in an all-graphene p-n
vertical junction photodetector.Nat.Commun.5:3249doi:10.1038/ncomms4249
(2014)) so as to which photoresponse has reached 0.4-1mAW-1；Also have been reported that the addition carrier tunnel layer between bilayer graphene
(Liu,C.-H.,Y.-C.Chang,et al.(2014)."Graphene photodetectors with ultra-
broadband and high responsivity at room temperature."Nature nanotechnology 9:
273-278), over an ultra optical detection (532nm-3200nm) is realized, its photoresponse can also reach 1AW-1.But due to
Graphene layer is light-absorption layer, and the problem that the absorptivity of device is low does not still improve.In order to improve the light of graphene-based device
Detection performance, it will be an important channel for realizing graphene-based photon detecting element to strengthen absorptance.Duan researchs in 2011
Group (Liu Y.et al.Plasmon resonance enhanced multicolour photodetection by
graphene.Nat.Commun.2:579doi:10.1038/ncomms1589 (2011) .) report using metal phasmon and
The mode of Graphene coupling can effectively strengthen photoelectric current, and the photoelectric current after increase is do not use phasmon device 4-5 times, its
Photoresponse reaches several mAW-1Magnitude, it is seen that metal phasmon coupled band carrys out a certain degree of raising of device performance.2012
Year Frank H.L.Koppens seminar (Konstantatos, G., M.Badioli, et al. (2012). " Hybrid
graphene-quantum dot phototransistors with ultrahigh gain."Nature
nanotechnology 7(6):363-368) using Colloidal Quantum Dots be light absorbing zone, Graphene as photo-generated carrier migrate
Raceway groove is prepared for hybrid optical crystal detection pipe, gives the credit to the light absorbs of quantum dot, device photoresponse up to 1 × 107A·W-1,
Simply the spectral absorption characteristics of semi-conducting material PbS quantum determine the response spectrum scope of device, cause device spectral to ring
Answer narrow range.
The content of the invention
To solve above-mentioned technical problem, it is an object of the invention to provide a kind of infrared light detecting transistor, which is based on stone
Black olefinic carbon nanotube composite absorption layer, can reduce the dark current of infrared detector and improve its responsiveness.
The present invention also aims to provide the equipment containing above-mentioned infrared light detecting transistor.
To reach above-mentioned purpose, present invention firstly provides a kind of based on the infrared of graphene carbon nanotube composite absorption layer
Optical detection transistor, wherein, gate metal layer that the infrared light detecting transistor includes setting gradually from bottom to top, substrate, grid
Pole dielectric layer, graphene/carbon nano-tube composite absorption layer；
The graphene/carbon nano-tube composite absorption layer is by least one of which graphene layer and at least one of which carbon nanotube layer group
Into, graphene layer can be under carbon nanotube layer, it is also possible on carbon nanotube layer, also, at least one of which graphene layer with
Gate dielectric layer contact, the graphene layer are respectively arranged at two ends with source electrode, drain electrode, and the graphene/carbon nano-tube is multiple
The carbon nanotube layer in absorbed layer is closed located at the source electrode, between draining.
In above-mentioned infrared light detecting transistor, the graphene layer and carbon in graphene/carbon nano-tube composite absorption layer is received
The order up and down of mitron layer can be adjusted, and carbon nanotube layer is main light absorbing zone, and graphene layer is for auxiliary light absorbing zone and makees
Raceway groove is transported for photo-generated carrier.Carbon nanotube layer and graphene layer directly contact form the field with infrared absorption characteristic and imitate
Answer transistor.The lower surface of source electrode is contacted with graphene layer respectively with the lower surface of drain electrode, is formed for connecting the source of transistor
Pole and the conducting channel for draining.Carbon nanotube layer between the source and drain, and graphene layer directly contact, carbon nanotube layer and
Source electrode, drain electrode are not directly contacted with.
CNT has wide response wave length scope, higher operation temperature and higher signal to noise ratio in infrared band, and
Photo-generate electron-hole pair is separated well can.The CNT of different-diameter has different absworption peaks, and the present invention is received using carbon
This characteristic of mitron changes the investigative range of detector by changing the micro-parameter of CNT, so as to realize detector
Most sensitive wavelength control.The present invention is brilliant as graphene/carbon nano-tube composite absorption layer infrared acquisition using CNT
The main light absorbing zone of body pipe.CNT and Graphene are the allotropes of material with carbon element, the side that they can be closed by pi-pi bond
Formula forms interface, it will help carrier is transported.CNT and Graphene have excellent electrical properties, and carrier is in carbon
The transfer rate in transfer ratio semiconductor-quantum-point in nanotube will faster, therefore, the speed of response of device can be higher.Always
It, device provided by the present invention with the photoresponse higher than traditional infrared sensitive detection parts, more flexible detection wave-length coverage,
Higher gain, faster response speed.The extensive technology of preparing for being additionally, since CNT and Graphene tends to ripe,
The device of the present invention can carry out prepare with scale, and cost also will be lower.
Specific embodiment of the invention, it is preferable that in above-mentioned infrared light detecting transistor, the CNT
CNT in layer includes SWCN, double-walled carbon nano-tube, multi-walled carbon nano-tubes, metallic carbon nanotubes, partly leads
The combination of one or more in body CNT etc..
Specific embodiment of the invention, it is preferable that in above-mentioned infrared light detecting transistor, the CNT
The thickness of layer is 1-20nm.
Specific embodiment of the invention, it is preferable that in above-mentioned infrared light detecting transistor, the source electrode and institute
Stating drain electrode includes at least double layer of metal respectively, also, its orlop metal is contacted with the graphene layer；It is highly preferred that described
Source electrode is different from the orlop metal of the drain electrode, for example：Source electrode and the conduction material that the lower metal for draining is different work functions
Material.It is highly preferred that the thickness of the source electrode and the drain electrode is respectively 20-100nm, the thickness of single metal layer is at least 3nm.
The metal of preferred embodiment of the invention, the source electrode and the drain electrode can include respectively aluminum, gold, titanium, palladium, nickel and
The combination of one or more in chromium etc..
Specific embodiment of the invention, it is preferable that in above-mentioned infrared light detecting transistor, the graphene layer
In Graphene be single-layer graphene, bilayer graphene or few layer graphene；It is highly preferred that the number of plies of few layer graphene is little
In or be equal to 10 layers.The Graphene adopted by graphene layer can be doping or unadulterated, can be by including machinery stripping
Prepare from techniques such as, chemical vapor depositions.
Specific embodiment of the invention, it is preferable that in above-mentioned infrared light detecting transistor, the gate metal
Layer includes at least one of which metal level；It is highly preferred that the gross thickness of the gate metal layer is in 20-100nm, the thickness of single metal layer
Degree is at least 3nm.
Specific embodiment of the invention, in above-mentioned infrared light detecting transistor, gate metal layer, source metal
The material of layer and drain metal layer can be the commonly used material of preparation gate metal layer in this area, can be continuous using one layer
Metallic film, it is preferable that the material of the gate metal layer, source metal and drain metal layer includes aluminum, gold, titanium, nickel
With the combination of one or more in chromium etc..
Specific embodiment of the invention, in above-mentioned infrared light detecting transistor, the material of substrate can be this
The commonly used material of substrate is prepared in field, it is preferable that the material of the substrate is semi-conducting material；It is highly preferred that described half
Conductor material includes the combination of one or more in silicon, gallium nitride, Zinc Oxide, carborundum etc..Substrate can select but be not limited to
The hard such as silicon chip, glass, sapphire or flexible substrate, for example with highly-doped p-type Si substrate, for supporting graphene/carbon to receive
Mitron composite absorption layer optical detection transistor arrangement.
Specific embodiment of the invention, in above-mentioned infrared light detecting transistor, it is preferable that gate dielectric
Material is the high dielectric material of light transmittance (or claiming the dielectric material of low light absorption)；It is highly preferred that the high dielectric of the light transmittance
Material includes the combination of one or more in gallium oxide, silicon oxide, aluminium sesquioxide and silicon nitride etc..
The present invention provide based on the infrared light detecting transistor of graphene/carbon nano-tube composite absorption layer can be according to
Prepared by usual manner, gate dielectric layer can be formed in substrate surface by thermal oxidation method；Gate metal layer can be by electricity
Beamlet evaporation is deposited on the surface of substrate；Graphene can be that the method that conventional method is prepared and aided in by PMMA is transferred to
The surface of gate dielectric layer；Source electrode and drain electrode can be formed at graphite by photoetching process, lift-off techniques, electron-beam vapor deposition method
The surface of alkene；Graphene-channel can be prepared by photoetching on the surface of Graphene, and be removed using oxygen plasma technique
Edge Graphene, among CNT can be made suspension and be spin-coated on graphene-channel.When receiving with multi-layer graphene, carbon
During mitron, repeat the preparation process of correlation.
Present invention also offers a kind of infrared detector, wherein, the infrared detector include it is above-mentioned based on Graphene/
The infrared light detecting transistor of CNT composite absorption layer.
In above-mentioned infrared detector, it is preferable that the lower surface of the gate metal layer, the upper surface of the source electrode, institute
The upper surface for stating drain electrode is respectively arranged with extraction electrode, and the extraction electrode is connected with each other by current measurer.
Present invention also offers the above-mentioned infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer is in light
Spectrum detection and analysis equipment or image show the application in sensing equipment.
Present invention also offers a kind of spectral detection analytical equipment, wherein, the spectral detection analytical equipment includes array point
The multiple above-mentioned infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer of cloth.
Present invention also offers a kind of image shows sensing equipment, wherein, the image shows that sensing equipment includes array point
The multiple above-mentioned infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer of cloth.
Compared with prior art, advantages of the present invention at least that：
By carbon nanotube layer is coupled with graphene layer, integral device is improved to infrared light (1000nm-2200nm)
Absorb, improve the sensitivity of infrared light detecting；
Simultaneously as CNT and Graphene are all carbon structure materials, its contact is more preferable, is distinguished by two metal levels
Grid and source electrode, drain electrode as transistor arrangement, and be clipped in graphene layer as conducting channel in the middle of double layer of metal, structure
Into the optical detection transistor of high speed.The present invention provide infrared light detecting transistor to infrared photaesthesia, can be applicable to it is wired or
The fields such as wireless telecommunications, sensing and monitoring.
Description of the drawings
Fig. 1 is the vertical of the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer that embodiment 1 is provided
To generalized section.
Fig. 2 is the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer that embodiment 1 is provided
FET (FET, Field Effect Transistor) schematic diagram.
Fig. 3 is the offer of embodiment 2 with for strengthening the interdigital (interdigitated of metal of effective optical detection area
Fingers the infrared detector based on graphene/carbon nano-tube composite absorption layer).
Infrared detectors of the Fig. 4 prepared by embodiment 1 source-drain current under 2000nm illumination of the power for 0.45mW
With the characteristic curve of grid voltage.
Fig. 5 be embodiment 1 prepared by infrared detector power for 0.45mW 2000nm illumination under photoelectric current with
The characteristic curve of grid voltage.
Specific embodiment
In order to be more clearly understood to the technical characteristic of the present invention, purpose and beneficial effect, now to skill of the invention
Art scheme carry out it is described further below, but it is not intended that to the present invention can practical range restriction.
Embodiment 1
A kind of infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer is present embodiments provided, its
Longitudinal profile schematic diagram is as shown in Figure 1.
The infrared light detecting transistor can have field-effect transistor structure, including sequentially forming gate metal from bottom to top
Layer 11, substrate 12 (the heavily doped silicon chip of p-type), gate dielectric layer 13 (silicon dioxide, thickness are 300nm), graphene/carbon nanometer
Pipe composite absorption layer；
Graphene/carbon nano-tube composite absorption layer includes graphene layer 14 and carbon nanotube layer 17, the two of graphene layer 14
End is respectively equipped with source electrode and drain electrode, wherein, carbon nanotube layer 17 is located between source electrode and drain electrode, on graphene layer 14, with stone
Black alkene layer directly contact；
Source electrode and drain electrode include two metal levels, i.e. source electrode upper metal layers 18 and source electrode lower metal layer 19 (two respectively
The material of person is different, respectively Au (40nm) and Cr (5nm)), drain electrode upper metal layers 16 and 15 (the two of lower metal layer that drain
Material it is different, respectively Au (40nm) and Pd (5nm)), also, source electrode lower metal layer 19 and the lower metal layer 15 that drains
Material is different.
The infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer that the present embodiment is provided can be according to
Step is prepared in detail below：
A, by p-type heavily doped silicon chip, 300nm thick silicon dioxide layers are prepared using thermal oxidation process thereon, third is adopted
Ketone, isopropanol, deionized water are cleaned by ultrasonic 10 minutes respectively；
B, using electron beam evaporation prepare gate metal layer (Cr/Au=5nm/40nm)；
C, the method in silicon dioxide layer using PMMA auxiliary, shift the single-layer graphene that CVD is grown on Copper Foil,
Soaking at room temperature removes PMMA layers at least 20 hours in acetone；
D, photoetching method is adopted, lift-off techniques, electron beam evaporation prepare source electrode (Cr/Au=5nm/40nm) and drain electrode
(Pd/Au=5nm/40nm)；
E, second photoetching prepare graphene-channel, and remove edge Graphene using oxygen plasma technique；
F, ready SWCN suspension is spin-coated in graphene-channel, room temperature is dried, and obtains infrared light
Crystal detection pipe.
The lead on the source electrode and drain electrode of above-mentioned infrared light detecting transistor, in grid lead, obtains infrared light spy
Device (FET (FET, Field Effect Transistor)) is surveyed, its structure is as shown in Figure 2.
Embodiment 2
Present embodiments provide a kind of infrared detector based on graphene/carbon nano-tube composite absorption layer, its structure
As shown in figure 3, which is a kind of with for strengthening the interdigital (interdigitated of metal of effective optical detection area
Fingers the infrared detector based on graphene/carbon nano-tube composite absorption layer), which is in the infrared of the offer of embodiment 1
Modify what is obtained on the basis of photo-detector, specifically：
Interdigital, the effective optical detection of enhancing for defining plurality of source regions and drain region is formed in the patterned on top of graphene layer 14
Area.
The infrared detector is a kind of very sensitive photo-detector, using with different work functions source metal and
Drain metal, can produce under source and drain bias for the detached internal potential of photo-generated carrier.If source-drain electrode uses identical
Using cover (shadow mask) is sprouted, metal, then can stop that the light at source electrode/Graphene interface (or drain electrode/Graphene interface) is inhaled
Receive, strengthen photoelectric current and produce, apply certain source and drain bias and can further enhance light detection efficiency.
Infrared detector based on the nano combined absorbed layer of graphene/carbon provided by the present invention also can be by array way
Implement, can be used for the application such as imaging.Binding signal process circuit can from array read current signal in all photo-detectors.
Fig. 4 be embodiment 1 prepare infrared detector power for 0.23mW 2000nm illumination under source-drain current and
The characteristic curve of grid voltage, wherein, abscissa is grid voltage, and to lie prostrate (V), vertical coordinate is source-drain current to unit, and unit is peace (A).From
Fig. 4 can be seen that：Under 2000nm Infrared irradiations, characteristic curve has obvious movement to the left, illustrates that carbon nanotube layer is produced
Light induced electron migrate to graphene layer, N-shaped doping is constituted to Graphene, and is moved to external circuit in the presence of source-drain voltage
Move.What dark was represented is the situation for not having illumination.
Fig. 5 be embodiment 1 prepare infrared detector power for 0.23mW 2000nm illumination under photoelectric current with grid
The characteristic curve of pressure.As can be seen from Figure 5：The infrared detector reaches 1.97 μ A of maximum photoelectric current in -5V grid voltages, correspondence
Photoresponse be 8.5mAW-1。
By the above results it can be seen that：Infrared detector provided by the present invention under 2000nm Infrared irradiations, meeting
Generation dirac point significantly moves right, and can draw its maximum photoelectric current that produce with the characteristic curve of grid voltage with reference to photoelectric current
Up to 1.97 μ A, the detector of the present invention has significant response to the infrared light of 2000nm.
Claims (8)
1. a kind of infrared light detecting transistor based on graphene carbon nanotube composite absorption layer, wherein, the transistor include from
It is lower and on set gradually gate metal layer, substrate, gate dielectric layer, graphene/carbon nano-tube composite absorption layer；The stone
Black alkene/CNT composite absorption layer is made up of at least one of which graphene layer and at least one of which carbon nanotube layer；Also, at least one
Layer graphene layer is contacted with the gate dielectric layer, the graphene layer be respectively arranged at two ends with source electrode, drain electrode, the graphite
Carbon nanotube layer in alkene/CNT composite absorption layer located at the source electrode, drain electrode between, and the carbon nanotube layer not with
The source electrode, drain contact；The thickness of the carbon nanotube layer is 1-20nm；
Wherein, the CNT in the carbon nanotube layer includes SWCN, double-walled carbon nano-tube, multi-wall carbon nano-tube
The combination of one or more in pipe, metallic carbon nanotubes, semiconductive carbon nano tube；Wherein, the source electrode and the leakage
Pole includes at least double layer of metal respectively, also, its orlop metal is contacted with the graphene layer；The source electrode and the drain electrode
Thickness be respectively 20-100nm, the thickness of single metal layer is at least 3nm.
2. infrared light detecting transistor according to claim 1, wherein, the Graphene in the graphene layer is monolayer
Graphene, bilayer graphene or few layer graphene；The number of plies of few layer graphene is less than or equal to 10 layers.
3. the infrared light detecting transistor according to any one of claim 1-2, wherein, the gate metal layer include to
Few layer of metal layer；The gross thickness of the gate metal layer is at least 3nm in 20-100nm, the thickness of single metal layer.
4. the infrared light detecting transistor according to any one of claim 1-2, wherein, the material of the gate metal layer
Include including the metal of the combination of one or more in aluminum, gold, titanium, palladium, nickel and chromium, the source electrode and the drain electrode respectively
The combination of one or more in aluminum, gold, titanium, palladium, nickel and chromium；The material of the substrate is semi-conducting material；The quasiconductor
Material includes the combination of one or more in silicon, gallium nitride, Zinc Oxide, carborundum；The material of the gate dielectric is
The high dielectric material of light rate；During the high dielectric material of the light transmittance includes gallium oxide, silicon oxide, aluminium sesquioxide and silicon nitride
The combination of one or more.
5. a kind of infrared detector, is characterized in that, the infrared detector includes the base described in any one of claim 1-4
In the infrared light detecting transistor of graphene/carbon nano-tube composite absorption layer；The lower surface of the gate metal layer, the source
The upper surface of pole, the upper surface of the drain electrode are respectively arranged with extraction electrode, and the extraction electrode is mutual by current measurer
Connection.
6. the infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer described in any one of claim 1-5
Application in spectral detection analytical equipment or image show sensing equipment.
7. a kind of spectral detection analytical equipment, wherein, the spectral detection analytical equipment includes multiple claim of array distribution
The infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer described in any one of 1-6.
8. a kind of image shows sensing equipment, wherein, the image shows that sensing equipment includes multiple claim of array distribution
The infrared light detecting transistor based on graphene/carbon nano-tube composite absorption layer described in any one of 1-6.
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