CN1677694A - Gallium nitride ultraviolet detector - Google Patents
Gallium nitride ultraviolet detector Download PDFInfo
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- CN1677694A CN1677694A CN 200510025438 CN200510025438A CN1677694A CN 1677694 A CN1677694 A CN 1677694A CN 200510025438 CN200510025438 CN 200510025438 CN 200510025438 A CN200510025438 A CN 200510025438A CN 1677694 A CN1677694 A CN 1677694A
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Abstract
Disclosed detector in GaN ultraviolet Schottky type and light conduction type and whose wavelength is 250 - 300nm. In the invention, reflector made from dielectric material (such as HfO2 and SiO2) in high reflectivity is adopted to replace traditional material of AlxGa1-xN (0.8 is less than or equal to x < 1) in high Al. Photoconductive part and gemstone substrate together is put into resonant cavity composed of upper and lower reflectors. Desired resonant cavity is realized through traditional semiconductor technique so as to avoid difficult problem for preparing reflector containing high Al.
Description
Technical field
The present invention relates to ultraviolet detector, specifically be meant cavity resonator structure, surveying wavelength is gallium nitride (GaN) ultraviolet detector of 250-300nm.
Background technology
At present the detection wavelength of the ultraviolet detector of GaN based resonant cavity structure mainly concentrates on the 360nm scope, and its structure is the Al in a plurality of cycles of alternating growth successively on the jewel substrate
xGa
1-xN (x ≈ 0.1) and AlN material constitute reflectivity and are approximately 99% following speculum, are being arranged in order growth Al on the speculum down
yGa
1-yN (0≤y≤x) separator, GaN absorbed layer, Al
yGa
1-yThe separator of N 0≤y≤x), the Al in a plurality of cycles of alternating growth successively again
xGa
1-xN (x ≈ 0.1) and AlN material constitute reflectivity and are approximately upper reflector about 70%.Because the Al of this structure
xGa
1-x(x ≈ 0.1) is lower for Al content among the N, and this can realize under present metal organic chemical deposition (MOCVD) or molecular beam epitaxy (MBE) material growth conditions basically.
But,,, require to constitute reflecting mirror material Al up and down through calculating to said structure if still adopt said structure to realize surveying the GaN ultraviolet detector that wavelength is 250-300nm
xGa
1-xAl content x among the N must be not less than 0.8.The Al of this high Al content
xGa
1-xN (0.8≤x＜1) material is difficult to growth under present MOCVD or MBE growth conditions, this just becomes surveys wavelength in the 250-300nm scope, the major obstacle of the GaN ultraviolet detector of existing structure.This also is that we also do not see the basic reason of detection wavelength at the GaN of 250-300nm scope ultraviolet detector report at present.
Summary of the invention
The object of the present invention is to provide and a kind ofly utilize two kinds of different dielectric substances to constitute the speculum of high reflectance, can avoid the Al of high Al content like this
xGa
1-xThe bottleneck of N (0.8≤x＜1) material in speculum preparation is the gallium nitride ultraviolet detector of 250-300nm by the detection wavelength that this speculum forms resonant cavity type again.
Gallium nitride ultraviolet detector of the present invention comprises: the jewel substrate 1 of polishing both surfaces, and being arranged in order growth in the one side of jewel substrate, AlN resilient coating 2, its thickness are arranged is 10～1000nm; GaN absorbed layer 3, its thickness are 10～50nm; Dielectric isolation layer 4; Reflectivity is the dielectric upper reflector 8 of 70%-80%; In the growth of the another side of jewel substrate reflectivity being arranged is speculum 9 under the dielectric of 90%-99%.
Said dielectric isolation layer 4 and dielectric upper reflector 8 can be following arbitrary group, and alternately logarithm is meant the alternating growth periodicity of reflecting mirror material, every layer thickness when every layer thickness is meant the reflecting mirror material alternating growth:
Insolated layer materials separation layer thickness reflecting mirror material replaces the thickness of every layer of logarithm
SiO
2 132-220nm HfO
2/SiO
2 1.5-2.5 27-36nm/45-54nm
SiO
2 132-220nm Al
2O
3/SiO
2 3.5-4.5 39-43nm/45-54nm
SiO
2 132-220nm ZrO
2/SiO
2 1.5-2.5 31-33nm/45-54nm
Al
2O
3 110-183nm Al
2O
3/HfO
2 3.5-4.5 39-43nm/27-36nm
MgF
2 141-236nm MgF
2/HfO
2 1.5-2.5 49-53nm/27-36nm
CaF
2 141-236nm CaF
2/HfO
2 1.5-2.5 48-52nm/27-36nm
MgF
2 141-236nm Al
2O
3/MgF
2 2.5-3.5 39-43nm/49-53nm
MgF
2 141-236nm ZrO
2/MgF
2 1.5-2.5 31-33nm/49-53nm
CaF
2 141-236nm Al
2O
3/CaF
2 2.5-3.5 39-43nm/48-52nm
CaF
2 141-236nm ZrO
2/CaF
2 1.5-2.5 31-33nm/48-52nm
Al
2O
3 110-183nm Al
2O
3/ZrO
2 4.5-5.5 39-43nm/31-33nm
Speculum 9 can be the dielectric substance of following arbitrary group of alternating growth under the said dielectric, comprises alternately logarithm, every layer thickness:
Dielectric substance replaces the thickness of every layer of logarithm
HfO
2/SiO
2 3.5-5.5 27～36nm/45～54nm
Al
2O
3/SiO
2 20.5-22.5 39～43nm/45～54nm
ZrO
2/SiO
2 5.5-6.5 31～33nm/45～54nm
Al
2O
3/HfO
2 8.5-9.5 39～43nm/27～36nm
MgF
2/HfO
2 4.5-5.5 49～53nm/27～36nm
CaF
2/HfO
2 4.5-5.5 48～52nm/27～36nm
Al
2O
3/MgF
2 6.5-7.5 39～43nm/49～53nm
ZrO
2/MgF
2 4.5-5.5 31～33nm/49～53nm
Al
2O
3/CaF
2 6.5-7.5 39～43nm/48～52nm
ZrO
2/CaF
2 4.5-5.5 31～33nm/48～52nm
Al
2O
3/ZrO
2 14.5-15.5 39～43nm/31～33nm
Said above-mentioned GaN ultraviolet detector if schottky device is translucent in addition between GaN absorbed layer and dielectric isolation layer, forms the Ni/Au metal level 5 of schottky junction, and its thickness is 3-10nm/3-20nm; The thickening Ni/Au Schottky electrode layer 6 of one projection is arranged in the centre of Ni/Au layer upper surface, and its thickness is 10-50nm/100-300nm; The female electrode layer 7 in Ti/Al Europe is put the edge on the GaN absorbed layer, and its thickness is 10-50nm/100-300nm, and structure is seen Fig. 1.
If photocon, the female electrode layer 10 in In/Au Europe is put the edge on the GaN absorbed layer, the adjacency of dielectric isolation layer, and its thickness is 10-50nm/100-300nm, structure is seen Fig. 2.
Core of the present invention is need be by the Al of high Al by utilizing dielectric substance formation high reflection mirror to replace tradition
xGa
1-xN (0.8≤x＜1) material constitutes speculum, simultaneously the photosensitive part of device and jewel substrate put into together by about the resonant cavity that constitutes of speculum.
The main cause that adopts this new structure is that the high reflection mirror that utilizes the dielectric substance be easy to grow to constitute replaces the high reflection mirror that the AlGaN material series of the high Al content that is difficult to grow constitutes, simultaneously because the growth of high quality GaN absorbed layer can only be on the AlGaN series material based on AlN and low temperature GaN, and can not be grown on the above-mentioned cited dielectric substance, its reason is the serious mismatch of lattice constant, thereby just can only put into the resonant cavity that is made of dielectric substance to the photosensitive part of device and jewel substrate together.
Detector operation process of the present invention is: survey light and enter into the GaN absorbed layer by upper reflector and dielectric isolation layer, because absorbed layer is very thin, the light of fraction is absorbed, most light all sees through AlN resilient coating and jewel substrate, arrive speculum down, surveying wavelength 250-300nm scope light transmission speculum in addition, and absorbed by GaN wave-length coverage will have 99% to reflect back into the photosensitive part of device with interior detection light after surveying, when arriving upper reflector, the light that sees through is reflected back to the photosensitive part of device again, like this detection light in surveying wave-length coverage repeatedly pass through the absorbed layer material, make the light of this part be fully absorbed, thereby obtain higher quantum efficiency, reach the purpose of detection.
The great advantage of panel detector structure of the present invention is:
Avoided the Al of high Al content
xGa
1-xBottleneck in the preparation of N (0.8≤x＜1) material speculum only needs to utilize conventional semiconductor device technology just can realize surveying the preparation of wavelength for the gallium nitride ultraviolet detector of 250-300nm.
Description of drawings
Fig. 1 is the structural representation of Schottky type gallium nitride ultraviolet detector.
Fig. 2 is the structural representation of guide type gallium nitride ultraviolet detector.
Embodiment
The embodiment of gallium nitride ultraviolet detector of the present invention is described in further detail by embodiment below in conjunction with accompanying drawing, with HfO
2/ SiO
2As two kinds of dielectric substances of speculum, its concrete preparation process is as follows:
1. on the wherein one side of the jewel substrate 1 of polishing both surfaces, utilize MOCVD or MBE grow successively the AlN resilient coating 2 of 500nm and the GaN absorbed layer 3 of 30nm.
2. above-mentioned sample surfaces is handled: utilize chloroform, acetone and ethanol that sample surfaces is cleaned at first successively, purpose is to remove the organic substance on surface; Utilize HNO then
3: H
2O=1: 1 or hydrochloric acid and chloroazotic acid sample surfaces is cleaned, purpose is to remove the oxide on surface; Utilize ammonia spirit that sample surfaces is cleaned then, utilize the deionized water rinsing sample at last, dry up standby with nitrogen.
3. because guide type is different with the structure of Schottky type device, so their the 3rd process has difference, sets forth respectively below:
(1) Schottky type device:
A. on GaN absorbed layer 3, carry out the photoetching first time (gluing, preceding baking, exposure, development and back baking);
B. utilize magnetron sputtering growth ohmic contact Ti/Al electrode layer 7, its thickness is 30nm/150nm;
C. with ethanol or the floating glue of acetone;
D. utilize the short annealing device 400～800 ℃ of temperature, time 10～120s is annealing down;
E. photoetching for the second time (gluing, preceding baking, exposure, development and back baking);
F. utilize magnetron sputtering growth schottky junction Ni/Au semi-transparent metal layer 5, thickness is 4nm/9nm;
G. with ethanol or the floating glue of acetone.
(2) guide type device:
A. on GaN absorbed layer 3, carry out the photoetching first time (gluing, preceding baking, exposure, development and back baking);
B. utilize magnetron sputtering growth ohmic contact In/Au electrode layer 10, thickness is 30nm/200nm;
C. with ethanol or the floating glue of acetone;
D. photoetching for the second time (gluing, preceding baking, exposure, development and back baking);
E. ion beam etching behind the glue admittedly;
F. with ethanol or the floating glue of acetone.
4. utilize thermionic electron beam evaporation or CVD growth thickness SiO for 150nm
2Separator 4.
5. utilize thermionic electron beam evaporation or CVD alternating growth HfO successively
2Layer, its thickness is 30nm and SiO
2Layer, its thickness is 50nm, the cycle is 1.5, constitutes upper reflector 8.
6. utilize thermionic electron beam evaporation or CVD alternating growth HfO successively on the another side of jewel substrate 1
2Layer, its thickness is 30nm and SiO
2Layer, its thickness is 50nm, the cycle is 4.5, constitutes speculum 9 down.
7. photoetching for the third time (gluing, preceding baking, exposure, development and back baking).
8. utilize ion beam etching to arrive certain degree of depth, just will etch away the reflecting mirror material that does not have the photoresist protection.
9. utilize the HF acid solution to erode unwanted SiO
2Insolated layer materials.
10. the 4th photoetching (gluing, preceding baking, exposure, development and back baking).
11. with ethanol or the floating glue of acetone, welding electrode, the device preparation finishes.
12. to the Schottky type device, also need utilize the thickening Ni/Au Schottky electrode layer 6 of magnetron sputtering growth projection after the 10th step, its thickness is 30nm/200nm.
Claims (1)
1. gallium nitride ultraviolet detector, comprising: the jewel substrate (1) of polishing both surfaces is characterized in that: being arranged in order growth in the one side of jewel substrate has AlN resilient coating (2), and its thickness is 10～1000nm; GaN absorbed layer (3), its thickness are 10～50nm; Dielectric isolation layer (4); Reflectivity is the dielectric upper reflector (8) of 70%-80%; In the growth of the another side of jewel substrate reflectivity being arranged is speculum (9) under the dielectric of 90%-99%;
Said dielectric isolation layer (4) and dielectric upper reflector (8) can be following arbitrary group; Alternately logarithm is meant the alternating growth periodicity of reflecting mirror material, every layer thickness when every layer thickness is meant the reflecting mirror material alternating growth:
Insolated layer materials separation layer thickness reflecting mirror material replaces the thickness of every layer of logarithm
SiO
2 132-220nm HfO
2/SiO
2 1.5-2.5 27-36nm/45-54nm
SiO
2 132-220nm Al
2O
3/SiO
2 3.5-4.5 39-43nm/45-54nm
SiO
2 132-220nm ZrO
2/SiO
2 1.5-2.5 31-33nm/45-54nm
Al
2O
3 110-183nm Al
2O
3/HfO
2 3.5-4.5 39-43nm/27-36nm
MgF
2 141-236nm MgF
2/HfO
2 1.5-2.5 49-53nm/27-36nm
CaF
2 141-236nm CaF
2/HfO
2 1.5-2.5 48-52nm/27-36nm
MgF
2 141-236nm Al
2O
3/MgF
2 2.5-3.5 39-43nm/49-53nm
MgF
2 141-236nm ZrO
2/MgF
2 1.5-2.5 31-33nm/49-53nm
CaF
2 141-236nm Al
2O
3/CaF
2 2.5-3.5 39-43nm/48-52nm
CaF
2 141-236nm ZrO
2/CaF
2 1.5-2.5 31-33nm/48-52nm
Al
2O
3 110-183nm Al
2O
3/ZrO
2 4.5-5.5 39-43pnm/31-33nm
Speculum under the said dielectric (9) can be the dielectric substance of following arbitrary group of alternating growth, comprises alternately logarithm, every layer thickness:
Dielectric substance replaces the thickness of every layer of logarithm
HfO
2/SiO
2 3.5-5.5 27～36nm/45～54nm
Al
2O
3/SiO
2 20.5-22.5 39～43nm/45～54nm
ZrO
2/SiO
2 5.5-6.5 31～33nm/45～54nm
Al
2O
3/HfO
2 8.5-9.5 39～43nm/27～36nm
MgF
2/HfO
2 4.5-5.5 49～53nm/27～36nm
CaF
2/HfO
2 4.5-5.5 48～52nm/27～36nm
Al
2O
3/MgF
2 6.5-7.5 39～43nm/49～53nm
ZrO
2/MgF
2 4.5-5.5 31～33nm/49～53nm
Al
2O
3/CaF
2 6.5-7.5 39～43nm/48～52nm
ZrO
2/CaF
2 4.5-5.5 31～33nm/48～52nm
Al
2O
3/ZrO
2 14.5-15.5 39～43nm/31～33nm
Said above-mentioned GaN ultraviolet detector if schottky device is translucent in addition between GaN absorbed layer and dielectric isolation layer, forms the Ni/Au metal level (5) of schottky junction, and its thickness is 3-10nm/3-20nm; The Ni/Au Schottky electrode layer (6) of one projection thickening is arranged in the centre of Ni/Au layer upper surface, and its thickness is 10-50nm/100-300nm; The female electrode layer in Ti/Al Europe (7) is put the edge on the GaN absorbed layer, and its thickness is 10-50nm/100-200nm;
If photocon, the female electrode layer in In/Au Europe (10) is put the edge on the GaN absorbed layer, and the adjacency of dielectric isolation layer, its thickness are 10-50nm/100-300nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100254386A CN100345312C (en) | 2005-04-27 | 2005-04-27 | Gallium nitride ultraviolet detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100254386A CN100345312C (en) | 2005-04-27 | 2005-04-27 | Gallium nitride ultraviolet detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1677694A true CN1677694A (en) | 2005-10-05 |
| CN100345312C CN100345312C (en) | 2007-10-24 |
Family
ID=35050093
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100254386A Expired - Fee Related CN100345312C (en) | 2005-04-27 | 2005-04-27 | Gallium nitride ultraviolet detector |
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| CN (1) | CN100345312C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102530820A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Dangling syntony photon device and preparation method thereof based on silicon substrate nitride |
| CN101809755B (en) * | 2007-09-24 | 2014-09-03 | 高通Mems科技公司 | Interferometric photovoltaic cell |
| CN104393093A (en) * | 2014-11-13 | 2015-03-04 | 北京工业大学 | High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene |
| CN106291908A (en) * | 2016-10-18 | 2017-01-04 | 中国科学院国家天文台南京天文光学技术研究所 | Golden enhancement mode reflectance coating system and preparation method for large-scale astronomical telescope primary mirror |
| CN108950504A (en) * | 2018-08-03 | 2018-12-07 | 江苏环奥金属材料科技有限公司 | A kind of alloy target material and preparation method thereof forming Ohmic contact on N-type compound semiconductor materials surface |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6233267B1 (en) * | 1998-01-21 | 2001-05-15 | Brown University Research Foundation | Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique |
| US6154311A (en) * | 1998-04-20 | 2000-11-28 | Simtek Hardcoatings, Inc. | UV reflective photocatalytic dielectric combiner having indices of refraction greater than 2.0 |
-
2005
- 2005-04-27 CN CNB2005100254386A patent/CN100345312C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101809755B (en) * | 2007-09-24 | 2014-09-03 | 高通Mems科技公司 | Interferometric photovoltaic cell |
| CN102530820A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Dangling syntony photon device and preparation method thereof based on silicon substrate nitride |
| CN104393093A (en) * | 2014-11-13 | 2015-03-04 | 北京工业大学 | High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene |
| CN104393093B (en) * | 2014-11-13 | 2017-02-01 | 北京工业大学 | High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene |
| CN106291908A (en) * | 2016-10-18 | 2017-01-04 | 中国科学院国家天文台南京天文光学技术研究所 | Golden enhancement mode reflectance coating system and preparation method for large-scale astronomical telescope primary mirror |
| CN106291908B (en) * | 2016-10-18 | 2021-05-11 | 中国科学院国家天文台南京天文光学技术研究所 | Gold-enhanced reflecting film system for primary mirror of large astronomical telescope and preparation method thereof |
| CN108950504A (en) * | 2018-08-03 | 2018-12-07 | 江苏环奥金属材料科技有限公司 | A kind of alloy target material and preparation method thereof forming Ohmic contact on N-type compound semiconductor materials surface |
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| Publication number | Publication date |
|---|---|
| CN100345312C (en) | 2007-10-24 |
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Granted publication date: 20071024 Termination date: 20100427 |