CN109148639A - A kind of solar blind ultraviolet detector structure, preparation method and performance test methods - Google Patents

A kind of solar blind ultraviolet detector structure, preparation method and performance test methods Download PDF

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Publication number
CN109148639A
CN109148639A CN201810904899.8A CN201810904899A CN109148639A CN 109148639 A CN109148639 A CN 109148639A CN 201810904899 A CN201810904899 A CN 201810904899A CN 109148639 A CN109148639 A CN 109148639A
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detector
active layer
solar blind
blind ultraviolet
layer
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陆海
周东
渠凯军
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Zhenjiang Jia Xin Electro-Optical Technology Inc (us) 62 Martin Road Concord Massachusetts 017
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Zhenjiang Jia Xin Electro-Optical Technology Inc (us) 62 Martin Road Concord Massachusetts 017
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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Abstract

It includes Ni/Au electrode, Al that the invention patent, which discloses a kind of solar blind ultraviolet detector structure, preparation method and performance test methods, structure,0.4Ga0.6N active layer, low temperature AI N nucleating layer, high-temperature AlN buffer layer and graphical sapphire substrate.Solar blind ultraviolet detector preparation method, growth obtains device low temperature AI N nucleation, Al on substrate first0.4Ga0.6The epitaxial structure of N active layer and high-temperature AlN buffer layer, while in Al0.4Ga0.6Ni/Au electrode is deposited on N active layer, for characterizing the transmitance and resistivity of semitransparent electrode, Ti/Au electrode is as contact electrode, finally, entire device rapid thermal annealing.Performance test methods include: to illustrate that detector quality reaches requirement if flawless with the presence or absence of crackle by micro- sem observation detector surface.The present invention is had an advantage that: compared with the solar blind ultraviolet detector of no annealing, performance is become more stable；Extremely low dark current can be obtained using high-temperature AlN buffer layer technique；There is better quantum efficiency using graphical sapphire substrate.

Description

A kind of solar blind ultraviolet detector structure, preparation method and performance test methods
Technical field
The present invention relates to photoelectric sensor fields, and in particular to a kind of solar blind ultraviolet detector structure, preparation method and property It can test method.
Background technique
Ultraviolet detector is widely used in various fields at present, has in fields such as military affairs, agricultural, traffic great Application value, therefore scientific research personnel never cuts down always the research of solar blind ultraviolet detector and exploration temperature.
Up to the present, more tradition and mature technical solution is with vacuum photomultiplier tube and ultraviolet enhancement silicon light Both there is disadvantage as ultraviolet detector device in electric diode, vacuum photomultiplier tube is bulky, it is broken to be easy Broken, required operating voltage is high；Outer enhanced type silicon photodiode needs optical filter to reduce the influence of visible light and infrared light, and Expensive optical filter increases product cost.
It is more and more to use GaN, ZnO and diamond etc. as ultraviolet with the development and maturation of technical field of semiconductors Detector prepares basic material, and wherein the research of GaN ultraviolet detector and use are also relatively most frequent, and advantage most outstanding is GaN can with AlN formed AlGaN alloy, band gap can be mediated so that the cutoff wavelength of ultraviolet detector accordingly In a certain range consecutive variations；Although ZnO has many advantages, such as that exciton bind energy is high, growth temperature is low and capability of resistance to radiation is strong, full The condition of foot preparation high-performance ultraviolet detector, but device is opaque, preparation process is complicated, production cost is higher；Diamond Although having higher band gap, it has excellent performance, due to being influenced by its Costco Wholesale is high, research at present is not obtained with applying It is universal.
Working performance is excellent at normal temperature for AlGaN base solar blind ultraviolet detector, but in high temperature extreme environment, device Dark current characteristic can have a greatly reduced quality, and explore and be suitble to work under hot environment, the AlGaN base day blind ultraviolet spy of performance and good quality Surveying device becomes the emphasis direction of research.
Summary of the invention
In order to provide the solar blind ultraviolet detector of performance and good quality, structure of the invention includes Ni/Au electrode, low temperature AlN nucleating layer, Al0.4Ga0.6N active layer, high-temperature AlN buffer layer and graphical sapphire substrate, the Al0.4Ga0.6N active layer Surface layout have Ni/Au electrode, the high-temperature AlN buffer layer is arranged in Al0.4Ga0.6N active layer and low temperature AI N nucleating layer it Between, the low temperature AI N nucleating layer is arranged between high-temperature AlN buffer layer and graphical sapphire substrate.
Further, the substrate is graphical sapphire substrate.
The low temperature AI N nucleating layer is with a thickness of 0.3 μm.
The high-temperature AlN buffer layer thickness is 0.3 μm.
The Al0.4Ga0.6N active layer is with a thickness of 0.5 μm.
The solar blind ultraviolet detector exists the preparation method is as follows: passing through metal organic chemical vapor deposition technology first Growth obtains low temperature AI N nucleating layer, high-temperature AlN buffer layer and Al on graphical sapphire substrate0.4Ga0.6The extension of N active layer Structure, while in Al0.4Ga0.6Ni/Au electrode is deposited on N active layer, for characterizing the transmitance and resistivity of semitransparent electrode, Finally, N of the entire device at 250 DEG C2Rapid thermal annealing 200s in atmosphere.
The metal organic chemical vapor deposition technology be it is a kind of using organic metal pyrolysis carry out gas phase outside Prolong the chemical vapour deposition technique of growing film.
The performance test methods of the solar blind ultraviolet detector are as follows: by finding detector table under microscopical observation Face whether there is the case where crackle, judges whether detector quality reaches requirement, if flawless, illustrates that detector quality reaches It is required that illustrating that detector quality not up to requires if there is crackle；It is observed down by scanning electron microscope, finds detector Whether surface topography is smooth, if smooth, illustrates that detector quality reaches requirement, if out-of-flatness, illustrates detector quality not Reach requirement；Pass through Lambda photometer measurement Al0.4Ga0.6N active layer spectral transmittance judges Al0.4Ga0.6N active layer material The content of middle Al component, long wave band transmitance is higher in spectrum, it was demonstrated that Al0.4Ga0.6The interface quality of N active layer structure is got over It is good.
Beneficial effects of the present invention: (1) solar blind ultraviolet detector is shown excellent at a high temperature of room temperature and 100 DEG C Performance, show that device is suitable for working under high temperature；(2) experiment discovery, compared with the solar blind ultraviolet detector of no annealing, low temperature The consistency of solar blind ultraviolet detector can be improved in annealing process, and the solar blind ultraviolet detector performance after annealing becomes more steady It is fixed；(3) present invention uses high-temperature AlN buffer layer technique, can obtain extremely low dark current；(4) graphical sapphire substrate is used Common Sapphire Substrate is substituted, there is better quantum efficiency.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
In figure: 1- graphical sapphire substrate, 2- low temperature AI N nucleating layer, 3- high-temperature AlN buffer layer, 4-Al0.4Ga0.6N has Active layer, 5-Ni/Au electrode.
Specific embodiment
The present invention is described in detail with specific example with reference to the accompanying drawing.
As described in Figure 1, a kind of solar blind ultraviolet detector structure, including Ni/Au electrode (5), Al0.4Ga0.6N active layer (4), Low temperature AI N nucleating layer (2), high-temperature AlN buffer layer (3) and graphical sapphire substrate (1), the Al0.4Ga0.6N active layer (4) Surface layout have Ni/Au electrode (5), the AlN buffer layer is arranged in Al0.4Ga0.6N active layer (4) and Sapphire Substrate (1) Between, for the low temperature AI N nucleating layer (2) with a thickness of 0.3 μm, the high-temperature AlN buffer layer (3) is described with a thickness of 0.3 μm Al0.4Ga0.6N active layer (4) is with a thickness of 0.5 μm.
A kind of solar blind ultraviolet detector preparation method, first by metal organic chemical vapor deposition technology in sapphire Growth obtains low temperature AI N nucleating layer (2), high-temperature AlN buffer layer (3) and Al on substrate (1)0.4Ga0.6The extension of N active layer (4) Structure, while in Al0.4Ga0.6Ni/Au electrode (5) are deposited on N active layer (4), finally, N of the entire device at 250 DEG C2Atmosphere Middle rapid thermal annealing 200s.
A kind of solar blind ultraviolet detector performance test methods find whether detector surface is deposited by microscopical observation The crackle the case where, judges whether detector quality reaches requirement, if flawless, illustrate that detector quality reaches requirement, if There is crackle, then illustrates that detector quality not up to requires；It is observed by scanning electron microscope, discovery detector surface pattern is It is no smooth, if smooth, illustrate that detector quality reaches requirement, if out-of-flatness, illustrates that detector quality not up to requires；It is logical Cross Lambda photometer measurement Al0.4Ga0.6N active layer (4) spectral transmittance judges Al0.4Ga0.6Al in N active layer (4) material The content of component, long wave band transmitance is higher in spectrum, it was demonstrated that Al0.4Ga0.6The interface quality of N active layer (4) structure is better.

Claims (6)

1. a kind of solar blind ultraviolet detector structure, it is characterised in that: including Ni/Au electrode (5), Al0.4Ga0.6N active layer (4), Low temperature AI N nucleating layer (2), high-temperature AlN buffer layer (3) and graphical sapphire substrate (1), the Al0.4Ga0.6N active layer (4) Surface layout have Ni/Au electrode (5), the AlN buffer layer is arranged in Al0.4Ga0.6N active layer (4) and Sapphire Substrate (1) Between.
2. a kind of solar blind ultraviolet detector structure as described in claim 1, which is characterized in that the low temperature AI N nucleating layer (2) is thick Degree is 0.3 μm.
3. a kind of solar blind ultraviolet detector structure as described in claim 1, which is characterized in that the high-temperature AlN buffer layer (3) is thick Degree is 0.3 μm.
4. a kind of solar blind ultraviolet detector structure as described in claim 1, which is characterized in that the Al0.4Ga0.6N active layer (4) With a thickness of 0.5 μm.
5. a kind of solar blind ultraviolet detector preparation method, it is characterised in that: pass through metal organic chemical vapor deposition skill first Art is grown on Sapphire Substrate (1) obtains low temperature AI N nucleating layer (2), high-temperature AlN buffer layer (3) and Al0.4Ga0.6N active layer (4) epitaxial structure, while in Al0.4Ga0.6Ni/Au electrode (5) are deposited on N active layer (4), finally, entire device is at 250 DEG C N2Rapid thermal annealing 200s in atmosphere.
6. a kind of solar blind ultraviolet detector performance test methods, it is characterised in that: by microscopical observation, find detector table Face whether there is the case where crackle, judges whether detector quality reaches requirement, if flawless, illustrates that detector quality reaches It is required that illustrating that detector quality not up to requires if there is crackle；It is observed by scanning electron microscope, finds detector table Whether face pattern is smooth, if smooth, illustrates that detector quality reaches requirement, if out-of-flatness, illustrates that detector quality does not reach To requirement；Pass through Lambda photometer measurement Al0.4Ga0.6N active layer (4) spectral transmittance judges Al0.4Ga0.6N active layer (4) The content of Al component in material, long wave band transmitance is higher in spectrum, it was demonstrated that Al0.4Ga0.6The interface of N active layer (4) structure Quality is better.
CN201810904899.8A 2018-08-09 2018-08-09 A kind of solar blind ultraviolet detector structure, preparation method and performance test methods Withdrawn CN109148639A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114171634A (en) * 2021-12-03 2022-03-11 中国科学院长春光学精密机械与物理研究所 Solar blind ultraviolet photoelectric detector and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103031596A (en) * 2012-12-14 2013-04-10 中国电子科技集团公司第五十五研究所 Epitaxial growth method of solar-blind UV (Ultraviolet) photocathode based on AlGaN (Aluminum Gallium Nitrogen) materials
CN204130567U (en) * 2014-09-24 2015-01-28 滁州学院 A kind of avalanche photodide for day blind ultraviolet detection
CN105590971A (en) * 2016-03-18 2016-05-18 南京大学 AlGaN solar-blind ultraviolet enhanced avalanche photo-detector and preparation method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103031596A (en) * 2012-12-14 2013-04-10 中国电子科技集团公司第五十五研究所 Epitaxial growth method of solar-blind UV (Ultraviolet) photocathode based on AlGaN (Aluminum Gallium Nitrogen) materials
CN204130567U (en) * 2014-09-24 2015-01-28 滁州学院 A kind of avalanche photodide for day blind ultraviolet detection
CN105590971A (en) * 2016-03-18 2016-05-18 南京大学 AlGaN solar-blind ultraviolet enhanced avalanche photo-detector and preparation method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114171634A (en) * 2021-12-03 2022-03-11 中国科学院长春光学精密机械与物理研究所 Solar blind ultraviolet photoelectric detector and preparation method thereof
CN114171634B (en) * 2021-12-03 2024-03-15 中国科学院长春光学精密机械与物理研究所 Solar blind ultraviolet photoelectric detector and preparation method thereof

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Application publication date: 20190104