CN106449894B - Ga based on double heterojunction2O3/ GaN/SiC photodetection diodes and preparation method thereof - Google Patents
Ga based on double heterojunction2O3/ GaN/SiC photodetection diodes and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000007769 metal material Substances 0.000 claims abstract description 42
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 20
- 230000008021 deposition Effects 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 39
- 229910052786 argon Inorganic materials 0.000 claims description 27
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000001657 homoepitaxy Methods 0.000 claims description 7
- 229910052774 Proactinium Inorganic materials 0.000 claims description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 33
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000000126 substance Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 5
- 230000005622 photoelectricity Effects 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 235000019504 cigarettes Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of Ga based on double heterojunction2O3/ GaN/SiC photodetection diodes and preparation method thereof.This method includes：Choose SiC substrate；Homogeneity epitaxial layer, GaN layer and Ga are continuously grown on SiC substrate surface2O3Layer；In Ga2O3Layer surface formation light absorbing layer；The first metal material formation hearth electrode is deposited in whole substrate lower surface；The metal material of surface deposition second forms top electrode to ultimately form the photodetection diode over the entire substrate.Present invention employs double-heterostructure, leakage current can be effectively reduced, so as to greatly improve the device reliability of photodiode.And by Ga2O3Materials application gives full play to its performance in terms of ultraviolet detector, the electrology characteristic of its electrically conducting transparent is beneficial to the light absorpting ability for improving light absorbing layer, and then greatly improves the device performance of photodetection diode in light absorbing layer.
Description
Technical field
The invention belongs to technical field of integrated circuits, and in particular to a kind of Ga based on double heterojunction2O3/ GaN/SiC photoelectricity
Detect diode and preparation method thereof.
Background technology
With deepening continuously for the research and discovery work in the field such as astronomy, high-energy physics, space technology in recent years, and its
The rapid expansion of application prospect in terms of interplanetary probe, artificial satellite, for the requirement of the detector of light especially ultraviolet light
More and more higher, is more paid close attention to if ultraviolet countermeasure and anti-countermeasure techniques in photoelectronic warfare by the military.Usual wavelength 10~
400nm electromagnetic wave turns into ultraviolet, both different from visible radiation, and infra-red radiation is different from again；Wherein come from solar radiation
Ultraviolet in the spectrum area that is almost fully absorbed by atmosphere be referred to as day-old chick, be the more difficult area detected in ultraviolet detection
Domain.
Photodetection diode is a kind of photo-detector diode based on PN junction, general measurable ultraviolet to infrared light district
Domain, has very big use value, such as in day-old chick in tail cigarette or plumage cigarette in the exploitation in military high-tech Yu civilian goods market
The airbound target that a large amount of ultraviolet radioactives can be discharged carries out real-time detection or effectively tracking.
But it is weak and indifferent in terms of ultraviolet detector that current photo-detector diode still has light absorpting ability
The problems such as.
The content of the invention
In order to solve the above-mentioned problems in the prior art, Ga is based on the invention provides one kind2O3/ SiC heterojunction structures
Photoelectricity NPN transistor and preparation method thereof.
An embodiment provides a kind of Ga based on double heterojunction2O3/ GaN/SiC photodetection diodes
And preparation method thereof, including：
Choose SiC substrate；
Homogeneity epitaxial layer, GaN layer and Ga are continuously grown on the SiC substrate surface2O3Layer；
In the Ga2O3Layer surface formation light absorbing layer；
The first metal material formation hearth electrode is deposited in whole substrate lower surface；
The metal material of surface deposition second forms top electrode to ultimately form the pole of photodetection two over the entire substrate
Pipe.
In one embodiment of the invention, SiC substrate is chosen, including：
4H-SiC the or 6H-SiC materials for choosing N-type are used as the SiC substrate；
The SiC substrate is cleaned using RCA standard cleanings technique.
In one embodiment of the invention, continuously grown on the SiC substrate surface homogeneity epitaxial layer, GaN layer and
Ga2O3Layer, including：
Using LPCVD techniques, the SiC substrate superficial growth adulterate N element SiC material to be formed described in N-type
Homogeneity epitaxial layer；
Using MOCVD techniques, the homoepitaxy superficial growth adulterate N element GaN material to form the GaN
Layer；
Using MBE techniques, in the GaN layer superficial growth β-Ga2O3Material forms the Ga2O3Layer.
In one embodiment of the invention, in the Ga2O3Layer surface formation light absorbing layer, including：
Using the first mask plate, using magnetron sputtering technique in the Ga2O3Layer surface sputters the 3rd metal material formation institute
State light absorbing layer.
In one embodiment of the invention, using magnetron sputtering technique in the Ga2O3Layer surface sputters the 3rd metal
Material, including：
Using Ni materials as target, it is passed through using argon gas as sputter gas in sputter chamber, is 100W in operating power, very
Reciprocal of duty cycle is 6 × 10-4~1.3 × 10-3Under conditions of Pa, in the Ga2O3Layer surface sputters the Ni materials to be used as described the
Three metal materials.
In one embodiment of the invention, the first metal material formation hearth electrode, bag are deposited in whole substrate lower surface
Include：
Using magnetron sputtering technique including SiC substrate, the homogeneity epitaxial layer, the GaN layer, the Ga2O3Layer and institute
The lower surface for stating the whole substrate of light absorbing layer sputters first metal material；
Under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process the whole substrate lower surface and described the
Ohmic contact is formed at one metal material surface to complete the preparation of the hearth electrode.
In one embodiment of the invention, using magnetron sputtering technique including SiC substrate, the homogeneity epitaxial layer,
The GaN layer, the Ga2O3The lower surface of the whole substrate of layer and the light absorbing layer sputters first metal material, bag
Include：
Using Ni materials as target, it is passed through using argon gas as sputter gas in sputter chamber, is 100W in operating power, very
Reciprocal of duty cycle is 6 × 10-4~1.3 × 10-3Under conditions of Pa, the lower surface of the whole substrate sputter the Ni materials using as
First metal material.
In one embodiment of the invention, the metal material of superficial growth second forms top electrode, bag over the entire substrate
Include：
Using the second mask plate, using magnetron sputtering technique including SiC substrate, the homogeneity epitaxial layer, the GaN
Layer, the Ga2O3The whole substrate top surface of layer and the light absorbing layer grows second metal material；
Under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process the upper surface of the whole substrate with it is described
Ohmic contact is formed at second metal material surface to complete the preparation of the top electrode.
In one embodiment of the invention, using magnetron sputtering technique including SiC substrate, the homogeneity epitaxial layer,
The GaN layer, the Ga2O3The whole substrate top surface of layer and the light absorbing layer grows second metal material, including：
Using Ni materials as target, be passed through using argon gas as sputter gas in sputter chamber, operating power be 20~
100W, is 6 × 10 in vacuum-4~1.3 × 10-3Under conditions of Pa, sputter to form the Ni materials in the whole substrate surface
Material；
Using Au materials as target, be passed through using argon gas as sputter gas in sputter chamber, operating power be 20~
100W, is 6 × 10 in vacuum-4~1.3 × 10-3Under conditions of Pa, in Ni material surfaces sputtering Au material formation Ni/
Au laminations bimetallic material is to be used as second metal material.
An alternative embodiment of the invention provides a kind of Ga based on double heterojunction2O3The pole of/GaN/SiC photodetections two
Pipe, wherein, the Ga based on double heterojunction2O3Described in/GaN/SiC photodetection diodes are any in above-described embodiment
Method prepares to be formed.
The photodetection diode of the present invention employs double-heterostructure, so as to form double potential barrier, can effectively reduce Lou
Electric current, so that the device reliability of photodiode is greatly improved, and the practicality of the present invention is higher, at present on sic substrates
The technique for carrying out homoepitaxy and growth GaN layer is ripe, also occurs growing Ga in GaN substrate2O3Maturation process, this
Invention combines two techniques, and practical value is high.In addition, the photodetection diode of the present invention is by Ga2O3Materials application is in light absorbs
Layer, gives full play to its excellent performance in terms of ultraviolet detector, the material in day-old chick light permeable rate up to more than 80%, even
To 90%, it is very suitable for being applied to light absorbing layer, the electrology characteristic of its electrically conducting transparent is also beneficial to improve light absorbing layer in addition
Light absorpting ability, and then greatly improve the device performance of photodetection diode.
Brief description of the drawings
Fig. 1 is a kind of Ga based on double heterojunction provided in an embodiment of the present invention2O3/ GaN/SiC photodetection diodes
Schematic cross-section；
Fig. 2 is a kind of Ga based on double heterojunction provided in an embodiment of the present invention2O3/ GaN/SiC photodetection diodes
Schematic top plan view；
Fig. 3 is a kind of Ga based on double heterojunction provided in an embodiment of the present invention2O3/ GaN/SiC photodetection diodes
Preparation method schematic flow sheet；
Fig. 4 a- Fig. 4 g are a kind of Ga based on double heterojunction provided in an embodiment of the present invention2O3/ GaN/SiC photodetections two
The preparation method schematic diagram of pole pipe；
Fig. 5 is a kind of structural representation of first mask plate provided in an embodiment of the present invention；And
Fig. 6 is a kind of structural representation of second mask plate provided in an embodiment of the present invention.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
It is a kind of Ga based on double heterojunction provided in an embodiment of the present invention to refer to Fig. 1 and Fig. 2, Fig. 12O3/GaN/SiC
The schematic cross-section of photodetection diode, Fig. 2 is a kind of Ga based on double heterojunction provided in an embodiment of the present invention2O3/GaN/
The schematic top plan view of SiC photodetection diodes.The photodetection diode of the present invention includes：SiC substrate 1, N-type homoepitaxy
Layer 2, GaN layer 3, N-type Ga2O3Layer 4, hearth electrode 5, top electrode 6, light absorbing layer 7 are constituted.
Wherein, SiC substrate is 4H-SiC the or 6H-SiC materials of N-type；N-type homogeneity epitaxial layer 2 is the SiC of doping N element,
Doping concentration 1015cm-3Magnitude；The GaN layer 3 is the p-type GaN material of doping N element, doping concentration 1017cm-3Magnitude；Institute
State N-type Ga2O3Layer is doping Sn, Si, Al β-Ga2O3(-201)、β-Ga2O3Or β-Ga (010)2O3(001) material, adulterates dense
Degree 1017cm-3Magnitude；The light absorbing layer is the materials such as Ti, Al, Ni.
Further, the top electrode is the metal materials such as Au, Al, Ti, Sn, Ge, In, Ni, Co, Pt, W, Mo, Cr, Cu, Pb
Expect, formed comprising the conductive compound such as two or more alloy or ITO in these metals.Furthermore it is possible to by different 2 kinds
2 Rotating fields that above metal is constituted, such as Al/Ti.The hearth electrode be Au, Al, Ti, Sn, Ge, In, Ni, Co, Pt, W, Mo,
The metal materials such as Cr, Cu, Pb, formed comprising the conductive compound such as two or more alloy or ITO in these metals.Furthermore it is possible to
With 2 Rotating fields being made up of different 2 kinds and above metal, such as Al/Ti laminations bimetallic material.
It should be noted that：Semiconductor material with wide forbidden band Ga2O3, because material day-old chick light permeable rate up to 80% even
More than 90% and be particularly well suited for the photodetection of DUV day-old chick, its photoelectric sensitivity is high, has the sapphire transparency concurrently
It is the ideal material for carrying out photodetection diode research with SiC electric conductivity.
Fig. 3 is referred to, Fig. 3 is a kind of Ga based on double heterojunction provided in an embodiment of the present invention2O3/ GaN/SiC photoelectricity is visited
Survey the preparation method schematic flow sheet of diode.This method comprises the following steps：
Step 1, selection SiC substrate；
Step 2, on the SiC substrate surface continuously grow homogeneity epitaxial layer, GaN layer and Ga2O3Layer；
Step 3, in the Ga2O3Layer surface formation light absorbing layer；
Step 4, whole substrate lower surface deposit the first metal material formation hearth electrode；
Step 5, the over the entire substrate metal material of surface deposition second formation top electrode are visited with ultimately forming the photoelectricity
Survey diode.
Wherein, step 1 can include：
Step 11,4H-SiC the or 6H-SiC materials of selection N-type are used as the SiC substrate；
Step 12, using RCA standard cleanings technique the SiC substrate is cleaned.
Step 2 can include：
Step 21, using LPCVD techniques, the SiC substrate superficial growth adulterate N element SiC material to form N-type
The homogeneity epitaxial layer；
Step 22, using MOCVD techniques, the homoepitaxy superficial growth adulterate N element GaN material to be formed
State GaN layer；
Step 23, using MBE techniques, the β that the GaN layer superficial growth doped chemical is the elements such as Sn, Si, Al-
Ga2O3Material forms the Ga2O3Layer.
Step 3 can include：
Using the first mask plate, using magnetron sputtering technique in the Ga2O3Layer surface sputters the 3rd metal material formation institute
State light absorbing layer.Specifically, using Ni materials as target, it is passed through using argon gas as sputter gas in sputter chamber, in work work(
Rate is 100W, and vacuum is 6 × 10-4~1.3 × 10-3Under conditions of Pa, in the Ga2O3Layer surface sputter the Ni materials with
It is used as the 3rd metal material.
Step 4 can include：
Step 41, using magnetron sputtering technique including the SiC substrate, homogeneity epitaxial layer, the GaN layer, described
Ga2O3The lower surface of the whole substrate of layer and the light absorbing layer sputters first metal material；
Step 42, under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process the whole substrate lower surface
With forming Ohmic contact at first metal material surface to complete the preparation of the hearth electrode.
Further, step 41 can include：Using Ni materials as target, sputtering chamber is passed through using argon gas as sputter gas
It is 100W in operating power, vacuum is 6 × 10 in body-4~1.3 × 10-3Under conditions of Pa, under the whole substrate
Surface sputters the Ni materials to be used as first metal material.
Step 5 can include：
Step 51, using the second mask plate, using magnetron sputtering technique including SiC substrate, the homogeneity epitaxial layer, institute
State GaN layer, the Ga2O3The whole substrate top surface of layer and the light absorbing layer grows second metal material；
Step 52, under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process in the upper surface of the whole substrate
With forming Ohmic contact at second metal material surface to complete the preparation of the top electrode.
Wherein, step 51 can include：
Step 511, using Ni materials as target, be passed through using argon gas as sputter gas in sputter chamber, in operating power
It is 6 × 10 in vacuum for 20~100W-4~1.3 × 10-3Under conditions of Pa, sputter to form institute in the whole substrate surface
State Ni materials；
Step 512, using Au materials as target, be passed through using argon gas as sputter gas in sputter chamber, in operating power
It is 6 × 10 in vacuum for 20~100W-4~1.3 × 10-3Under conditions of Pa, Au material shapes are sputtered in the Ni material surfaces
Into Ni/Au laminations bimetallic material to be used as second metal material.
It is important to note that the technological process of the hearth electrode and top electrode in step 4 and step 5 is not fixed.Can
First to carry out the preparation of hearth electrode, the preparation of top electrode can also be first carried out, no limitations are hereby intended.
The photodetection diode of the present embodiment employs double-heterostructure, so as to form double potential barrier, can effectively reduce
Leakage current, so that the device reliability of photodiode is greatly improved, and the practicality of the present invention is higher, at present in SiC substrate
The upper technique for carrying out homoepitaxy and growth GaN layer is ripe, also occurs growing Ga in GaN substrate2O3Maturation process,
The present invention combines two techniques, and practical value is high.
In addition, the photodetection diode of the present invention is by Ga2O3Materials application gives full play to it ultraviolet in light absorbing layer
Excellent performance in terms of optical detection, the material, up to more than 80%, or even to 90%, is very suitable for application in day-old chick light permeable rate
In light absorbing layer, the electrology characteristic of its electrically conducting transparent is also beneficial to improve the light absorpting ability of light absorbing layer in addition, and then significantly
Improve the device performance of photodetection diode.
Embodiment three
It is provided in an embodiment of the present invention a kind of based on double please also refer to Fig. 4 a- Fig. 4 g and Fig. 5 and Fig. 6, Fig. 4 a- Fig. 4 h
The Ga of hetero-junctions2O3The preparation method schematic diagram of/GaN/SiC photodetection diodes；Fig. 5 is provided in an embodiment of the present invention one
The structural representation and Fig. 6 for planting the first mask plate are a kind of structural representation of second mask plate provided in an embodiment of the present invention.
The present embodiment is on the basis of above-described embodiment, to the Ga based on double heterojunction of the present invention2O3The pole of/GaN/SiC photodetections two
The preparation method of pipe is described in detail as follows：
Step 1：Fig. 4 a are referred to, prepare SiC substrate 1, thickness is 350 μm, and RCA standard cleanings are carried out to substrate；
Step 2：Fig. 4 b are referred to, N-type homogeneity epitaxial layer is generated by LPCVD in the SiC substrate 1 that step 1 is prepared
2, doping concentration is 1015cm-3Magnitude, doped chemical is N, and thickness is in 5~10um；
Step 3：Fig. 4 c are referred to, by MOCVD formation GaN layers 3 on the N-type homogeneity epitaxial layer 2 that step 2 is prepared,
Doping concentration is 1017cm-3Magnitude, doped chemical is N, and thickness is in 5~10um；
Step 4：Fig. 4 d are referred to, pass through molecular beam epitaxy (Molecular Beam in the GaN layer 3 that step 3 is prepared
Epitaxy, abbreviation MBE) technique growth β-Ga2O3Layer 4, doping concentration is 1017cm-3Magnitude, doped chemical is Sn, Si, Al etc.
Element, thickness is in 5~10um；
Step 5：Fig. 4 e and Fig. 5 are referred to, the β-Ga prepared in step 42O3Layer 4 uses the first mask plate, passes through magnetic control
Sputtering forms Ni light absorbing layers 7；
Sputtering target material compares purity from quality>99.99% nickel, Ar using mass percent purity as 99.999% as
Sputter gas is passed through sputtering chamber, before sputtering, and magnetron sputtering apparatus cavity is carried out with high-purity argon gas to clean within 5 minutes, then takes out true
It is empty.It is 6 × 10 in vacuum-4~1.3 × 10-3Pa, argon flow amount are 20~30cm3/ second, target cardinal distance are 10cm and work work(
Rate is under conditions of 100W, prepares colelctor electrode Ni, and thickness of electrode is 30nm~100nm.
Light absorbing layer 7 can select the materials such as Ti, Al, Ni.
Step 6：Fig. 4 f are referred to, the lower surface of N-type SiC substrate 1 prepared in step 1 passes through Grown by Magnetron Sputtering Ni bottoms
Electrode 5.
Sputtering target material compares purity from quality>99.99% nickel, Ar using mass percent purity as 99.999% as
Sputter gas is passed through sputtering chamber, before sputtering, and magnetron sputtering apparatus cavity is carried out with high-purity argon gas to clean within 5 minutes, then takes out true
It is empty.It is 6 × 10 in vacuum-4~1.3 × 10-3Pa, argon flow amount are 20~30cm3/ second, target cardinal distance are 10cm and work work(
Rate is under conditions of 100W, prepares colelctor electrode Ni, and thickness of electrode is 150nm~250nm, afterwards nitrogen or argon at 1000 DEG C
Rapid thermal annealing 3min under compression ring border.
Metal optional Au, Al, Ti of hearth electrode etc. difference element and its composition 2 Rotating fields, also can select Al Ti Ni
Ag the metal substitute such as Pt.Wherein Au Ag Pt chemical property it is stable；Al Ti Ni costs it is low.
Step 7：Fig. 4 g and Fig. 6 are referred to, the light absorbing layer 7 and Ga prepared in step 52O3The second mask is used on layer 4
Version, passes through Grown by Magnetron Sputtering Ni/Au top electrodes 6.
Sputtering target material compares purity from quality>99.99% nickel, Ar using mass percent purity as 99.999% as
Sputter gas is passed through sputtering chamber, before sputtering, and magnetron sputtering apparatus cavity is carried out with high-purity argon gas to clean within 5 minutes, then takes out true
It is empty.It is 6 × 10 in vacuum-4~1.3 × 10-3Pa, argon flow amount are 20-30cm3/ second, target cardinal distance are 10cm and work work(
Rate is under conditions of 20W~100W, prepares top electrode nickel, and thickness of electrode is 20nm~30nm.
Sputtering target material compares purity from quality>99.99% Au, Ar using mass percent purity as 99.999% as
Sputter gas is passed through sputtering chamber, before sputtering, and magnetron sputtering apparatus cavity is carried out with high-purity argon gas to clean within 5 minutes, then takes out true
It is empty.It is 6 × 10 in vacuum-4-1.3×10-3Pa, argon flow amount are 20-30cm3/ second, target cardinal distance are 10cm and operating power
Under conditions of 20W-100W, gate electrode gold is prepared, thickness of electrode is 150nm-200nm, afterwards under nitrogen or ar gas environment
500 DEG C of annealing 3min formation Ohmic contacts.
Metal optional Au, Al, Ti of top electrode etc. difference element and its composition double-decker, also can select Al Ti
Ni Ag the metal substitute such as Pt.Wherein Au Ag Pt chemical property it is stable；Al Ti Ni costs it is low.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to recognized
The specific implementation of the fixed present invention is confined to these explanations.For general technical staff of the technical field of the invention,
Without departing from the inventive concept of the premise, some simple deduction or replace can also be made, the present invention should be all considered as belonging to
Protection domain.
Claims (9)
1. a kind of Ga based on double heterojunction2O3The preparation method of/GaN/SiC photodetection diodes, it is characterised in that including：
Choose SiC substrate；
Using LPCVD techniques, the SiC substrate superficial growth adulterate N element SiC material to form the homoepitaxy of N-type
Layer；
Using MOCVD techniques, the homoepitaxy superficial growth adulterate N element GaN material to form GaN layer；
Using MBE techniques, in the GaN layer superficial growth β-Ga2O3Material formation Ga2O3Layer；
In the Ga2O3Layer surface formation light absorbing layer；
The first metal material formation hearth electrode is deposited in whole substrate lower surface；
The metal material of surface deposition second forms top electrode to ultimately form the photodetection diode over the entire substrate.
2. according to the method described in claim 1, it is characterised in that choose SiC substrate, including：
4H-SiC the or 6H-SiC materials for choosing N-type are used as the SiC substrate；
The SiC substrate is cleaned using RCA standard cleanings technique.
3. according to the method described in claim 1, it is characterised in that in the Ga2O3Layer surface formation light absorbing layer, including：
Using the first mask plate, using magnetron sputtering technique in the Ga2O3Layer surface sputters the 3rd metal material and forms the light
Absorbed layer.
4. method according to claim 3, it is characterised in that using magnetron sputtering technique in the Ga2O3Layer surface is sputtered
3rd metal material, including：
Using Ni materials as target, it is passed through using argon gas as sputter gas in sputter chamber, is 100W, vacuum in operating power
For 6 × 10-4~1.3 × 10-3Under conditions of Pa, in the Ga2O3Layer surface sputters the Ni materials to be used as the 3rd gold medal
Belong to material.
5. according to the method described in claim 1, it is characterised in that deposit the first metal material in whole substrate lower surface and formed
Hearth electrode, including：
Using magnetron sputtering technique including SiC substrate, the homogeneity epitaxial layer, the GaN layer, the Ga2O3Layer and the light
The lower surface of the whole substrate of absorbed layer sputters first metal material；
Under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process the whole substrate lower surface and first gold medal
Form Ohmic contact to complete the preparation of the hearth electrode at category material surface.
6. method according to claim 5, it is characterised in that using magnetron sputtering technique including SiC substrate, described same
Matter epitaxial layer, the GaN layer, the Ga2O3The lower surface of the whole substrate of layer and the light absorbing layer sputters first metal
Material, including：
Using Ni materials as target, it is passed through using argon gas as sputter gas in sputter chamber, is 100W, vacuum in operating power
For 6 × 10-4~1.3 × 10-3Under conditions of Pa, the Ni materials are sputtered using as described in the lower surface of the whole substrate
First metal material.
7. according to the method described in claim 1, it is characterised in that characterized in that, superficial growth second over the entire substrate
Metal material formation top electrode, including：
Using the second mask plate, using magnetron sputtering technique including SiC substrate, the homogeneity epitaxial layer, the GaN layer,
The Ga2O3The whole substrate top surface of layer and the light absorbing layer grows second metal material；
Under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process in the upper surface of the whole substrate and second gold medal
Form Ohmic contact to complete the preparation of the top electrode at category material surface.
8. method according to claim 7, it is characterised in that using magnetron sputtering technique including SiC substrate, described
Homogeneity epitaxial layer, the GaN layer, the Ga2O3The whole substrate top surface of layer and the light absorbing layer grows second metal
Material, including：
Using Ni materials as target, it is passed through using argon gas as sputter gas in sputter chamber, is 20~100W in operating power,
Vacuum is 6 × 10-4~1.3 × 10-3Under conditions of Pa, sputter to form the Ni materials in the whole substrate surface；
Using Au materials as target, it is passed through using argon gas as sputter gas in sputter chamber, is 20~100W in operating power,
Vacuum is 6 × 10-4~1.3 × 10-3It is double in Ni material surfaces sputtering Au material formation Ni/Au laminations under conditions of Pa
Metal material is to be used as second metal material.
9. a kind of Ga based on double heterojunction2O3/ GaN/SiC photodetection diodes, it is characterised in that the photodetection two
Pole pipe is prepared as the method described in claim any one of 1-8 and formed.
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| PCT/CN2017/114675 WO2018103647A1 (en) | 2016-12-08 | 2017-12-05 | Method for fabricating ultraviolet photodetector based on ga2o3 material |
| US16/119,067 US10629766B2 (en) | 2016-12-08 | 2018-08-31 | Method for manufacturing ultraviolet photodetector based on Ga2O3 material |
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| CN107644939B (en) * | 2017-06-05 | 2019-09-03 | 西安电子科技大学 | Wide range responds photodetector and preparation method thereof |
| CN107302054B (en) * | 2017-06-05 | 2019-09-20 | 西安电子科技大学 | Double heterojunction optical detector and preparation method thereof |
| CN107358780B (en) * | 2017-07-30 | 2020-01-03 | 王旭兰 | Intelligent electric spark detection alarm system based on PN junction chip and preparation method thereof |
| CN109326682B (en) * | 2018-08-10 | 2020-07-31 | 西安电子科技大学 | Photoelectric detection diode based on diamond/InP/SiC double heterojunction and preparation method thereof |
| CN109616552B (en) * | 2018-11-21 | 2020-04-14 | 温州大学 | GaN/SiC heterojunction lateral light-controlled IMPATT diode and preparation method thereof |
| CN111524995B (en) * | 2020-04-21 | 2022-02-15 | 昌吉学院 | β-Ga2O3GaN heterojunction solar blind/visible blind double-color ultraviolet detector and preparation method thereof |
| CN112382688B (en) * | 2020-10-16 | 2022-11-04 | 华南师范大学 | Photoelectric detector based on flexible gallium oxide/gallium nitride structure and preparation method |
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