CN107644939A - Wide range response photodetector and preparation method thereof - Google Patents

Wide range response photodetector and preparation method thereof Download PDF

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CN107644939A
CN107644939A CN201710848505.7A CN201710848505A CN107644939A CN 107644939 A CN107644939 A CN 107644939A CN 201710848505 A CN201710848505 A CN 201710848505A CN 107644939 A CN107644939 A CN 107644939A
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absorbing layer
light absorbing
preparation
photodetector
wide range
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CN107644939B (en
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贾仁需
庞体强
栾苏珍
张玉明
汪钰成
刘银涛
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Xidian University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The present invention relates to a kind of wide range response photodetector and preparation method thereof, the preparation method includes：(a) Sapphire Substrate is chosen；(b) hearth electrode is made in the sapphire substrate surface；(c) light absorbing layer is made on the hearth electrode surface；(d) top electrode is made on the light absorbing layer surface to complete the preparation that the wide range responds photodetector.Wide range provided by the invention responds photodetector, employs double-heterostructure, so as to form double potential barrier, can effectively reduce leakage current, so as to greatly improve the device reliability of photodetector.

Description

Wide range response photodetector and preparation method thereof
Technical field
The present invention relates to semiconductor device design and manufacturing field, more particularly to a kind of wide range response photodetector and its Preparation method.
Background technology
At present, most of photodetectors are the photo-detector diodes based on PN junction, general measurable ultraviolet to infrared Light region, there is very big use value in the exploitation in military high-tech Yu civilian goods market, such as in day-old chick to tail cigarette or plumage The airbound target that a large amount of ultraviolet radioactives can be discharged in cigarette carries out real-time detection or effectively tracking, and in infrared region, near infrared from detecting exists The fields such as resource investigation, environmental monitoring, medical diagnosis, night vision imaging suffer from important effect.
Based on CH3NH3PbI3Perovskite material be widely used in photo-detector, this material is from visible ray near It is infrared to have higher response.However, these photodetectors can not cover spectral absorption and the ultraviolet spectra of whole visible rays, These limit application of the perovskite material in broader spectrum scope.β-Ga2O3 are a kind of important with broad prospect of application Functional material, its energy gap are 4.9eV, are a kind of semi-conducting materials with dark purple external characteristics, and 200nm β-Ga2O3 are thin Film can reach more than 80% transmitance in UV light region, be widely used in DUV electric explorer.The detection utensil There is high sensitivity, can apply to the fields such as missile warning, horizon communication and fire hazard monitoring.
The problems such as light absorpting ability is weak, and spectral response range is narrow be present in current photodetector.
The content of the invention
Therefore, to solve technological deficiency and deficiency existing for prior art, the present invention proposes a kind of wide range response light electrical resistivity survey Survey device and preparation method thereof.
The embodiment provides a kind of preparation method of wide range response photodetector, including：
(a) Sapphire Substrate is chosen；
(b) hearth electrode is made in the sapphire substrate surface；
(c) light absorbing layer is made on the hearth electrode surface；
(d) top electrode is made on the light absorbing layer surface to complete the preparation that the wide range responds photodetector.
In one embodiment of the invention, step (b) includes：
(b1) magnetron sputtering technique is utilized, in the metal material of sapphire substrate surface growth regulation one；
(b2) under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process, the Sapphire Substrate and described the are made One metal material forms Ohmic contact to complete the preparation of the hearth electrode.
In one embodiment of the invention, step (c) includes：
(c1) the first light absorbing layer is made on the hearth electrode surface；
(c2) the second light absorbing layer is made on the first light absorbing layer surface；
(c3) the 3rd light absorbing layer is made on the second light absorbing layer surface.
In one embodiment of the invention, step (c1) includes：
Using magnetron sputtering technique, in the hearth electrode superficial growth Ga2O3Material, as first light absorbing layer.
In one embodiment of the invention, step (c2) includes：
(c21) spin coating precursor solution is prepared；
(c22) precursor solution is spun on first light absorbing layer；
(c23) at a temperature of 90 DEG C, using annealing process, the whole material including first light absorbing layer is moved back Fire processing, hydridization perovskite material is formed on the surface of first light absorbing layer, as second light absorbing layer.
In one embodiment of the invention, the hydridization perovskite material is CH3NH3PbI3、CH3NH3PbCl3、 CH3NH3SnI3In any one.
In one embodiment of the invention, step (c3) includes：
Using molecular beam epitaxial process, the second light absorbing layer superficial growth include the β of Sn, Si, Al doped chemical- Ga2O3Material, as the 3rd light absorbing layer.
In one embodiment of the invention, step (d) includes：
(d1) magnetron sputtering technique is utilized, in the second metal material of the 3rd light absorbing layer superficial growth；
(d2) under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process, make the 3rd light absorbing layer with it is described Second metal material forms Ohmic contact to complete the preparation of the top electrode.
In one embodiment of the invention, first metal material and second metal material be ITO, gold, silver, Any one in nickel, titanium, platinum, palladium, FTO materials, or to be any several in ITO, gold, silver, nickel, titanium, platinum, palladium, FTO materials The alloy of composition.
An alternative embodiment of the invention provides a kind of wide range response photodetector, including：Sapphire Substrate, bottom electricity Pole, Ga2O3Light absorbing layer, hydridization perovskite light absorbing layer, β-Ga2O3Light absorbing layer and top electrode；Wherein, tell that wide range rings Answer photodetector to be prepared as the method described in any one of above-described embodiment to be formed.
Compared with prior art, the invention has the advantages that：
1. hydridization perovskite can detect the light of Visible-to-Near InfaRed wave band, and β-Ga2O3 can detect deep ultraviolet to visible Light, the two hetero-junctions combined can detect the spectrum from deep ultraviolet to near-infrared, and can realize mutual supplement with each other's advantages；
2. employing double-heterostructure, so as to form double potential barrier, leakage current can be effectively reduced, so as to greatly improve photoelectricity The device reliability of detector；
3. having higher responsiveness and detectivity, while there is low dark current density and high external quantum efficiency.
Brief description of the drawings
Below in conjunction with accompanying drawing, the embodiment of the present invention is described in detail.
Fig. 1 is the preparation method flow chart that a kind of wide range provided in an embodiment of the present invention responds photodetector；
Fig. 2 a- Fig. 2 f are that a kind of wide range of the embodiment of the present invention responds the preparation method schematic diagram of photodetector；
Fig. 3 is the structural representation that a kind of wide range provided in an embodiment of the present invention responds photodetector.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to This.
Embodiment 1：
Fig. 1 is referred to, Fig. 1 is the preparation method flow that a kind of wide range provided in an embodiment of the present invention responds photodetector Figure, wherein, the preparation method includes：
(a) Sapphire Substrate is chosen；
(b) hearth electrode is made in the sapphire substrate surface；
(c) light absorbing layer is made on the hearth electrode surface；
(d) top electrode is made on the light absorbing layer surface to complete the preparation that the wide range responds photodetector.
Preferably, step (b) can include：
(b1) magnetron sputtering technique is utilized, in the metal material of sapphire substrate surface growth regulation one；
(b2) under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process, the Sapphire Substrate and described the are made One metal material forms Ohmic contact to complete the preparation of the hearth electrode.
Wherein, in step (b), the thickness of Ti metal levels is 50~200nm, and the operating power of magnetron sputtering technique is 80W, vacuum are 5 × 10-4~6 × 10-3Pa。
Preferably, step (c) can include：
(c1) the first light absorbing layer is made on the hearth electrode surface；
(c2) the second light absorbing layer is made on the first light absorbing layer surface；
(c3) the 3rd light absorbing layer is made on the second light absorbing layer surface.
Further, can include in step (c1)：
Using magnetron sputtering technique, in the hearth electrode superficial growth Ga2O3Material, as first light absorbing layer.
Wherein, in step (c1), Ga2O3The thickness of first light absorbing layer is 150~250nm
Further, can include in step (c2)：
(c21) spin coating precursor solution is prepared；
(c22) precursor solution is spun on first light absorbing layer；
(c23) at a temperature of 90 DEG C, using annealing process, the whole material including first light absorbing layer is moved back Fire processing, hydridization perovskite material is formed on the surface of first light absorbing layer, as second light absorbing layer.
Further, can include in step (c21)：
(c211) by CH3NH3I and PbI2It is dissolved in DMF solution；
(c212) at a temperature of 50 DEG C, the DMF solution is stirred, to complete the preparation of the spin coating precursor solution.
Wherein, in step (c211), CH3NH3I quality is 0.415g, PbI2Quality be 1.223g, DMF solution is 4mL。
Preferably, step (c3) can include：
Using molecular beam epitaxial process, the second light absorbing layer superficial growth include the β of Sn, Si, Al doped chemical- Ga2O3Material, as the 3rd light absorbing layer.
Alternatively, step (d) can include：
(d1) magnetron sputtering technique is utilized, in the second metal material of the 3rd light absorbing layer superficial growth；
(d2) under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process, make the 3rd light absorbing layer with it is described Second metal material forms Ohmic contact to complete the preparation of the top electrode.
Wherein, in step (d1), the operating power of magnetron sputtering technique is 60~80W, and vacuum is 5 × 10-4~6 × 10-3Pa。
Preferably, first metal material and second metal material are ITO, gold, silver, nickel, titanium, platinum, palladium, FTO Any one in material, or for ITO, gold, silver, nickel, titanium, platinum, palladium, any several compositions in FTO materials alloy；Enter one Step ground, first metal material are that golden material can reach optimum efficiency with second metal material.
The present embodiment, hydridization perovskite can detect the light of Visible-to-Near InfaRed wave band, and β-Ga2O3 can detect it is dark purple Visible ray is arrived outside, the two hetero-junctions combined can detect the spectrum from deep ultraviolet to near-infrared, and can realize that advantage is mutual Mend；Double-heterostructure is employed, so as to form double potential barrier, leakage current can be effectively reduced, so as to greatly improve photodetector Device reliability；With higher responsiveness and detectivity, while there is low dark current density and high external quantum efficiency.
Embodiment 2：
It refer to the preparation that a kind of wide range that Fig. 2 a- Fig. 2 f, Fig. 2 a- Fig. 2 f are the embodiment of the present invention responds photodetector Method schematic diagram, the preparation method comprise the following steps：
1st step, Sapphire Substrate 201 is chosen, as shown in Figure 2 a.
2nd step, using magnetron sputtering technique, sputter Ti materials on the surface of Sapphire Substrate 201；In nitrogen and the gas of argon gas Under atmosphere, using rapid thermal anneal process, Sapphire Substrate 201 is set to form Ohmic contact with Ti materials to complete hearth electrode 202 Prepare as shown in Figure 2 b.
3rd step, using magnetron sputtering technique, in the superficial growth Ga of hearth electrode 2022O3, as the first light absorbing layer 203 such as Shown in Fig. 2 c.
4th step, prepare spin coating precursor solution；Precursor solution is spun to the surface of the first light absorbing layer 203； At a temperature of 90 DEG C, using annealing process, the whole material including the first light absorbing layer 203 is made annealing treatment, in the first light The surface of absorbed layer 203 forms CH3NH3PbI3Film, as the second light absorbing layer 204,
As shown in Figure 2 d.
5th step, using molecular beam epitaxial process, include Sn, Si, Al doping member in the superficial growth of the second light absorbing layer 204 β-the Ga of element2O3Material, as the 3rd light absorbing layer 205, as shown in Figure 2 e.
6th step, using magnetron sputtering technique, in Ga2O3The superficial growth Au materials of 3rd light absorbing layer 205；In nitrogen and argon Under the atmosphere of gas, using rapid thermal anneal process, the 3rd light absorbing layer is set to form Ohmic contact with the Au materials to complete to push up The preparation of electrode, as shown in figure 2f.
Embodiment three
Fig. 3 is refer to, Fig. 3 is the structural representation that a kind of wide range provided in an embodiment of the present invention responds photodetector. The photodetector is made of the above-mentioned preparation method as shown in Fig. 2 a- Fig. 2 f.Specifically, the photodetector includes： Sapphire Substrate 301, hearth electrode 302, Ga2O3Light absorbing layer 303, hydridization perovskite light absorbing layer 304, β-Ga2O3Light absorbing layer 305 and top electrode 306.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention, On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's Protection domain.

Claims (10)

  1. A kind of 1. preparation method of wide range response photodetector, it is characterised in that including：
    (a) Sapphire Substrate is chosen；
    (b) hearth electrode is made in the sapphire substrate surface；
    (c) light absorbing layer is made on the hearth electrode surface；
    (d) top electrode is made on the light absorbing layer surface to complete the preparation that the wide range responds photodetector.
  2. 2. preparation method according to claim 1, it is characterised in that step (b) includes：
    (b1) magnetron sputtering technique is utilized, in the metal material of sapphire substrate surface growth regulation one；
    (b2) under the atmosphere of nitrogen and argon gas, using rapid thermal anneal process, the Sapphire Substrate and first gold medal are made Category material forms Ohmic contact to complete the preparation of the hearth electrode.
  3. 3. preparation method according to claim 1, it is characterised in that step (c) includes：
    (c1) the first light absorbing layer is made on the hearth electrode surface；
    (c2) the second light absorbing layer is made on the first light absorbing layer surface；
    (c3) the 3rd light absorbing layer is made on the second light absorbing layer surface.
  4. 4. preparation method according to claim 3, it is characterised in that step (c1) includes：
    Using magnetron sputtering technique, in the hearth electrode superficial growth Ga2O3Material, as first light absorbing layer.
  5. 5. preparation method according to claim 3, it is characterised in that step (c2) includes：
    (c21) spin coating precursor solution is prepared；
    (c22) precursor solution is spun on first light absorbing layer；
    (c23) at a temperature of 90 DEG C, using annealing process, the whole material including first light absorbing layer is carried out at annealing Reason, hydridization perovskite material is formed on the surface of first light absorbing layer, as second light absorbing layer.
  6. 6. preparation method according to claim 5, it is characterised in that the hydridization perovskite material is CH3NH3PbI3、 CH3NH3PbCl3And CH3NH3SnI3In any one.
  7. 7. preparation method according to claim 3, it is characterised in that step (c3) includes：
    Using molecular beam epitaxial process, include the β-Ga of Sn, Si, Al doped chemical in the second light absorbing layer superficial growth2O3 Material, as the 3rd light absorbing layer.
  8. 8. preparation method according to claim 3, it is characterised in that step (d) includes：
    (d1) magnetron sputtering technique is utilized, in the second metal material of the 3rd light absorbing layer superficial growth；(d2) in nitrogen and Under the atmosphere of argon gas, using rapid thermal anneal process, the 3rd light absorbing layer is set to form ohm with second metal material Contact to complete the preparation of the top electrode.
  9. 9. the preparation method according to claim 2 or 8, it is characterised in that first metal material and second gold medal Category material is ITO, gold, silver, nickel, titanium, platinum, palladium, any one in FTO materials, or for ITO, gold, silver, nickel, titanium, platinum, palladium, The alloy of any several compositions in FTO materials.
  10. 10. a kind of wide range responds photodetector, it is characterised in that including：Sapphire Substrate, hearth electrode, Ga2O3Light absorbing layer, Hydridization perovskite light absorbing layer, β-Ga2O3Light absorbing layer and top electrode；Wherein, tell that wide range responds photodetector by right It is required that the method described in 1~9 any one prepares to be formed.
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Cited By (7)

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CN108682747A (en) * 2018-05-16 2018-10-19 西安电子科技大学 A kind of double heterojunction perovskite photoelectric device and preparation method thereof
CN108807692A (en) * 2018-06-01 2018-11-13 华中科技大学 A method of inhibiting perovskite detector dark current
CN109713126A (en) * 2018-12-26 2019-05-03 西安电子科技大学 Based on wide bandgap semiconductor/perovskite hetero-junctions wideband photodetector
CN110993707A (en) * 2019-11-25 2020-04-10 西北工业大学 PIN diode based on gallium oxide multilayer stacked structure and preparation method thereof
CN111081886A (en) * 2019-11-25 2020-04-28 西北工业大学 PIN diode based on gallium oxide perovskite multilayer stacked structure and preparation method thereof
CN113292042A (en) * 2021-04-22 2021-08-24 江苏度微光学科技有限公司 Ultra-wide spectrum absorber, preparation method and application of absorber in spectrometer
CN114464693A (en) * 2022-04-12 2022-05-10 北京中科海芯科技有限公司 Photoelectric detector and preparation method thereof

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CN106571425A (en) * 2016-09-29 2017-04-19 湖北大学 ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector and preparation method thereof

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CN106571425A (en) * 2016-09-29 2017-04-19 湖北大学 ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector and preparation method thereof
CN106449894A (en) * 2016-12-08 2017-02-22 西安电子科技大学 Double heterojunction-based Ga2O3/GaN/SiC photoelectric detection diode and preparation method thereof

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108682747A (en) * 2018-05-16 2018-10-19 西安电子科技大学 A kind of double heterojunction perovskite photoelectric device and preparation method thereof
CN108682747B (en) * 2018-05-16 2020-11-24 西安电子科技大学 Double-heterojunction perovskite photoelectric device and preparation method thereof
CN108807692A (en) * 2018-06-01 2018-11-13 华中科技大学 A method of inhibiting perovskite detector dark current
CN109713126A (en) * 2018-12-26 2019-05-03 西安电子科技大学 Based on wide bandgap semiconductor/perovskite hetero-junctions wideband photodetector
CN110993707A (en) * 2019-11-25 2020-04-10 西北工业大学 PIN diode based on gallium oxide multilayer stacked structure and preparation method thereof
CN111081886A (en) * 2019-11-25 2020-04-28 西北工业大学 PIN diode based on gallium oxide perovskite multilayer stacked structure and preparation method thereof
CN111081886B (en) * 2019-11-25 2021-03-23 西北工业大学 PIN diode based on gallium oxide perovskite multilayer stacked structure and preparation method thereof
CN110993707B (en) * 2019-11-25 2021-06-15 西北工业大学 PIN diode based on gallium oxide multilayer stacked structure and preparation method thereof
CN113292042A (en) * 2021-04-22 2021-08-24 江苏度微光学科技有限公司 Ultra-wide spectrum absorber, preparation method and application of absorber in spectrometer
CN114464693A (en) * 2022-04-12 2022-05-10 北京中科海芯科技有限公司 Photoelectric detector and preparation method thereof
CN114464693B (en) * 2022-04-12 2022-06-28 北京中科海芯科技有限公司 Photoelectric detector and preparation method thereof

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