CN101866983A - Manufacturing method of fast response UV detector of n-type doped ZnO thin film - Google Patents

Manufacturing method of fast response UV detector of n-type doped ZnO thin film Download PDF

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Publication number
CN101866983A
CN101866983A CN201010173492A CN201010173492A CN101866983A CN 101866983 A CN101866983 A CN 101866983A CN 201010173492 A CN201010173492 A CN 201010173492A CN 201010173492 A CN201010173492 A CN 201010173492A CN 101866983 A CN101866983 A CN 101866983A
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thin film
zno
detector
zno thin
fast response
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CN101866983B (en
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孙建
张希清
刘凤娟
黄海琴
王永生
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Beijing Jiaotong University
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Beijing Jiaotong University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a manufacturing method of a fast response UV detector of an n-type doped ZnO thin film, which belongs to the field of optoelectronics information, solves the problem of low response speed of a ZnO photoconductive detector, and comprises the following steps: step 1: thoroughly cleaning a quartz substrate through a chemical cleaning method; step 2: growing a Ga-doped ZnO thin film on the thoroughly cleaned quartz substrate; step 3: putting the grown Ga-doped ZnO thin film under oxygen atmosphere to be annealed; step 4: vapor depositing two Al electrodes on the annealed Ga-doped ZnO thin film, wherein the structure sequentially comprises the following the quartz substrate, the Ga-doped ZnO thin film and the two Al electrodes from down to up. The mass ratio of the components of the Ga-doped ZnO thin film is as follows: Ga2O3:ZnO=(0.5 to 3 percent):(97 to 99.5 percent). The manufacturing method of the fast response UV detector of the n-type doped ZnO thin film can be used for environmental protection, fire detection, astronomical observation, biological medicine, medical health and other fields.

Description

The manufacture method of the fast response UV detector that a kind of n type is ZnO thin film doped
Technical field
The invention belongs to the field of opto-electronic information, the manufacture method of the fast response UV detector that particularly a kind of Ga is ZnO thin film doped.
Background technology
Ultraviolet detector is the key element of many applications, and for example it can be applied to the flame sensing, environmental monitoring, and astronomy observation and research, health care and bioengineering or the like aspect, material and the device of therefore developing this Detection Techniques are very important.
ZnO is as a kind of direct wide bandgap material, and at room temperature energy gap is 3.37eV, and exciton binding energy is up to 60meV, and ZnO film advantages such as to have a preparation simple, and growth temperature is low, and therefore zno-based film ultraviolet detector has received concern in recent years.The ZnO film of the ZnO photoconductive detector of preparation employing at present, its response speed is slow, is unfavorable for practical application.
Summary of the invention
To be solved by this invention is the slow technical problem of ZnO photoconductive detector response speed, and the manufacture method of the ZnO thin film doped fast response UV detector of a kind of n type is provided.
Technical scheme of the present invention:
The manufacture method of the fast response UV detector that a kind of n type is ZnO thin film doped, this method comprises following step:
Step 1 cleans up quartz substrate with chemical cleaning method;
Step 2, the ZnO film that growth Ga mixes on the quartz substrate that cleans up;
Step 3 is put into annealing under the oxygen atmosphere with the ZnO film that growth Ga mixes;
Step 4, two Al electrodes of evaporation on the ZnO film that the Ga after the annealing mixes;
Above step is made into structure: the ZnO film that quartz substrate, Ga mix, the ZnO thin film doped fast response UV detector of n type of two Al electrodes.
The growth apparatus of the ZnO film that described Ga mixes is a magnetron sputtering.
The ZnO film constituent mass that described Ga mixes is than being Ga 2O 3: ZnO=(0.5%～3%): (97%～99.5%).
The ZnO film thickness that Ga mixes in the described step 2 is 500～1200nm, and electrode spacing is 5～2000 μ m.
Annealing under oxygen atmosphere in the described step 3, annealing temperature are 700～900 ℃, and to improve film quality, vacuum evaporation Al thickness of electrode is 100～300nm, and electrode spacing is 5～2000 μ m.
Beneficial effect of the present invention:
Growth Ga doped n type ZnO film is as the photoelectric functional layer on quartz substrate by adopting in the present invention, and utilizing anneals in oxygen improves film quality, has prepared the detector of ultraviolet band.Mix because the ZnO film that adopts is the n type, its electron mobility is higher, and carrier transit time is short, so response speed is very fast.And the ultraviolet detector of doped n type ZnO film preparation, its high sensitivity, preparation is simple, and cost is low, has important application prospects in fields such as environmental protection, flame detecting, astronomy observation, biomedical research and health cares.
Description of drawings
Fig. 1 is the time response curve of fast response UV detector under the 355nm pulse laser irradiation of mixing the ZnO film of Ga.
Embodiment
Embodiment one
The manufacture method of the fast response UV detector that a kind of n type is ZnO thin film doped, this method comprises following step:
Step 1 cleans up quartz substrate with acetone, ethanol, deionized water;
Step 2 on the quartz substrate that cleans up, is the ZnO film of mixing Ga of 500nm with the magnetron sputtering apparatus grow thick, and its ratio of component is Ga 2O 3: ZnO=1wt%: 99wt%;
Step 3 is annealed the ZnO film that growth Ga mixes in oxygen, annealing temperature is 830 ℃;
Step 4 on the ZnO film that the Ga after the annealing mixes, is utilized two the Al electrodes of thermal evaporation apparatus evaporation thickness for 140nm, and the spacing of two Al electrodes is 200 microns.
The structure that above step is made into is from bottom to top successively: quartz substrate, the ZnO film that Ga mixes, the ZnO thin film doped fast response UV detector of n type of two Al electrodes.
Embodiment two
The manufacture method of the fast response UV detector that a kind of n type is ZnO thin film doped, this method comprises following step:
Step 1 cleans up quartz substrate with hydrochloric acid, ethanol, deionized water;
Step 2 on the quartz substrate that cleans up, is the ZnO film of mixing Ga of 1000nm with the magnetron sputtering apparatus grow thick, and its ratio of component is Ga 2O 3: ZnO=3wt%: 97wt%;
Step 3 is annealed the ZnO film that growth Ga mixes in oxygen, annealing temperature is 700 ℃;
Step 4 on the ZnO film that the Ga after the annealing mixes, utilizes that the magnetron sputtering apparatus evaporation is thick to be two Al electrodes of 100nm, and electrode spacing is 5 microns.
The structure that above step is made into is from bottom to top successively: quartz substrate, the ZnO film that Ga mixes, the ZnO thin film doped fast response UV detector of n type of two Al electrodes.
Embodiment three
The manufacture method of the fast response UV detector that a kind of n type is ZnO thin film doped, this method comprises following step:
Step 1 cleans up quartz substrate with acetone, ethanol, isopropyl alcohol;
Step 2 on the quartz substrate that cleans up, is the ZnO film of mixing Ga of 1200nm with the magnetron sputtering apparatus grow thick, and its ratio of component is Ga 2O 3: ZnO=0.5wt%: 99.5wt%;
Step 3 is annealed the ZnO film that growth Ga mixes in oxygen, annealing temperature is 900 ℃; Step 4 on the ZnO film that the Ga after the annealing mixes, utilizes that the thermal evaporation apparatus evaporation is thick to be two Al electrodes of 200nm, and two Al electrode spacings are 2000 microns.
The structure that above step is made into is from bottom to top successively: quartz substrate, the ZnO film that Ga mixes, the fast response UV detector of the ZnO film that the Ga of two Al electrodes mixes.
N type of the present invention is ZnO thin film doped can be the ZnO film of Ga doping, the ZnO film that ZnO is thin, aluminium mixes that indium mixes.
Be prepared into the ZnO film fast response UV detector that Ga mixes by above-mentioned embodiment one, its time response curve such as Fig. 1, it is very fast to obtain its response speed by Fig. 1, is respectively 10%～90% rise time and 90%～10% pulse fall time 10ns and 960ns.

Claims (5)

1. the manufacture method of the ZnO thin film doped fast response UV detector of a n type is characterized in that, comprises following step:
Step 1 cleans up quartz substrate with chemical cleaning method;
Step 2, the ZnO film that growth Ga mixes on the quartz substrate that cleans up;
Step 3 is put into annealing under the oxygen atmosphere with the ZnO film that growth Ga mixes;
Step 4, two Al electrodes of evaporation on the ZnO film that the Ga after the annealing mixes;
Above step is made into structure: quartz substrate, the ZnO film that Ga mixes, the ZnO thin film doped fast response UV detector of n type of two Al electrodes.
2. the manufacture method of the fast response UV detector that a kind of n type according to claim 1 is ZnO thin film doped is characterized in that, the growth apparatus of the ZnO film that described Ga mixes is a magnetron sputtering.
3. the manufacture method of the fast response UV detector that a kind of n type according to claim 1 is ZnO thin film doped is characterized in that: the ZnO film constituent mass that described Ga mixes is than being Ga 2O 3: ZnO=(0.5%～3%): (97%～99.5%).
4. the manufacture method of the fast response UV detector that a kind of n type according to claim 1 is ZnO thin film doped is characterized in that, the ZnO film thickness that Ga mixes in the step 2 is 500～1200nm, and electrode spacing is 5～2000 μ m.
5. the manufacture method of the fast response UV detector that a kind of n type according to claim 1 is ZnO thin film doped is characterized in that: annealing under oxygen atmosphere described in the step 3, annealing temperature are 700～900 ℃.
CN201010173492.6A 2010-05-10 2010-05-10 Manufacturing method of fast response UV detector of n-type doped ZnO thin film Expired - Fee Related CN101866983B (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102694052A (en) * 2011-03-22 2012-09-26 中国科学院微电子研究所 Semiconductor device and manufacturing method thereof
CN102694067A (en) * 2012-05-23 2012-09-26 中国科学院苏州纳米技术与纳米仿生研究所 Method for preparing voltage modulation ultraviolet bicolor photoelectric response detector
CN102832269A (en) * 2011-06-17 2012-12-19 中国科学院微电子研究所 Photoelectric detection lamination, semiconductor ultraviolet detector and manufacturing method of semiconductor ultraviolet detector
CN106449894A (en) * 2016-12-08 2017-02-22 西安电子科技大学 Double heterojunction-based Ga2O3/GaN/SiC photoelectric detection diode and preparation method thereof
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
US10126165B2 (en) 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1718840A (en) * 2005-06-21 2006-01-11 山东大学 Preparation method of gallium adulterated zinc oxide transparent conductive film
CN101055843A (en) * 2007-05-11 2007-10-17 北京交通大学 Method for growing the ZnO thin film at the SiO2 underlay
CN101651148A (en) * 2009-09-10 2010-02-17 浙江大学 ZnO group heterojunction and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1718840A (en) * 2005-06-21 2006-01-11 山东大学 Preparation method of gallium adulterated zinc oxide transparent conductive film
CN101055843A (en) * 2007-05-11 2007-10-17 北京交通大学 Method for growing the ZnO thin film at the SiO2 underlay
CN101651148A (en) * 2009-09-10 2010-02-17 浙江大学 ZnO group heterojunction and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
《半导体学报》 20050228 余旭浒，等 射频磁控溅射制备ZnO：Ga透明导电膜及特性 摘要 1-5 第26卷, 第2期 2 *
《物理》 20061231 邓宏，等 ZnO基紫外探测器研究进展 1-5 第35卷, 第7期 2 *

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CN102694052A (en) * 2011-03-22 2012-09-26 中国科学院微电子研究所 Semiconductor device and manufacturing method thereof
CN102832269A (en) * 2011-06-17 2012-12-19 中国科学院微电子研究所 Photoelectric detection lamination, semiconductor ultraviolet detector and manufacturing method of semiconductor ultraviolet detector
CN102832269B (en) * 2011-06-17 2016-06-22 中国科学院微电子研究所 Photodetection lamination, semiconductor ultraviolet detection device and manufacture method thereof
CN102694067A (en) * 2012-05-23 2012-09-26 中国科学院苏州纳米技术与纳米仿生研究所 Method for preparing voltage modulation ultraviolet bicolor photoelectric response detector
CN102694067B (en) * 2012-05-23 2016-04-27 中国科学院苏州纳米技术与纳米仿生研究所 The preparation method of the detector of the ultraviolet two-color photoelectric respone of voltage modulated
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
US10126165B2 (en) 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
US10718662B2 (en) 2015-07-28 2020-07-21 Carrier Corporation Radiation sensors
US11029202B2 (en) 2015-07-28 2021-06-08 Carrier Corporation Radiation sensors
CN106449894B (en) * 2016-12-08 2017-10-03 西安电子科技大学 Ga based on double heterojunction2O3/ GaN/SiC photodetection diodes and preparation method thereof
CN106449894A (en) * 2016-12-08 2017-02-22 西安电子科技大学 Double heterojunction-based Ga2O3/GaN/SiC photoelectric detection diode and preparation method thereof

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