CN101866983B - Manufacturing method of fast response UV detector of n-type doped ZnO thin film - Google Patents

Manufacturing method of fast response UV detector of n-type doped ZnO thin film Download PDF

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Publication number
CN101866983B
CN101866983B CN201010173492.6A CN201010173492A CN101866983B CN 101866983 B CN101866983 B CN 101866983B CN 201010173492 A CN201010173492 A CN 201010173492A CN 101866983 B CN101866983 B CN 101866983B
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thin film
zno
detector
zno thin
fast response
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CN101866983A (en
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孙建
张希清
刘凤娟
黄海琴
王永生
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Beijing Jiaotong University
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Beijing Jiaotong University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to a manufacturing method of a fast response UV detector of an n-type doped ZnO thin film, which belongs to the field of optoelectronics information, solves the problem of low response speed of a ZnO photoconductive detector, and comprises the following steps: step 1: thoroughly cleaning a quartz substrate through a chemical cleaning method; step 2: growing a Ga-doped ZnO thin film on the thoroughly cleaned quartz substrate; step 3: putting the grown Ga-doped ZnO thin film under oxygen atmosphere to be annealed; step 4: vapor depositing two Al electrodes on the annealed Ga-doped ZnO thin film, wherein the structure sequentially comprises the following the quartz substrate, the Ga-doped ZnO thin film and the two Al electrodes from down to up. The mass ratio of the components of the Ga-doped ZnO thin film is as follows: Ga2O3:ZnO=(0.5 to 3 percent):(97 to 99.5 percent). The manufacturing method of the fast response UV detector of the n-type doped ZnO thin film can be used for environmental protection, fire detection, astronomical observation, biological medicine, medical health and other fields.

Description

The manufacture method of the fast response UV detector that a kind of N-shaped is ZnO thin film doped
Technical field
The invention belongs to the field of opto-electronic information, particularly the manufacture method of the ZnO thin film doped fast response UV detector of a kind of Ga.
Background technology
Ultraviolet detector is the key element of many applications, and for example it can be applied to flame sensing, environmental monitoring, and astronomy observation and research, health care and bioengineering etc. aspect, the materials and devices of therefore developing this Detection Techniques is very important.
ZnO is as a kind of direct wide band gap material, and at room temperature energy gap is 3.37eV, and exciton binding energy is up to 60meV, and the ZnO film advantages such as to have preparation simple, and growth temperature is low, and therefore zno-based film ultraviolet detector has received concern in recent years.The ZnO film that the ZnO photoconductive detector of preparation adopts at present, its response speed is slow, is unfavorable for practical application.
Summary of the invention
To be solved by this invention is the slow technical problem of ZnO photoconductive detector response speed, and the manufacture method of the ZnO thin film doped fast response UV detector of a kind of N-shaped is provided.
Technical scheme of the present invention:
A manufacture method for the fast response UV detector that N-shaped is ZnO thin film doped, the method comprises following step:
Step 1, cleans up quartz substrate with chemical cleaning method;
Step 2, the ZnO film of the Ga that grows in the quartz substrate cleaning up doping;
Step 3, puts into the ZnO film of growth Ga doping under oxygen atmosphere and anneals;
Step 4, two Al electrodes of evaporation on the ZnO film of the Ga doping after annealing;
Above step is made into structure successively from bottom to top: quartz substrate, the ZnO film of Ga doping, the ZnO thin film doped fast response UV detector of N-shaped of two Al electrodes.
The growth apparatus of the ZnO film of described Ga doping is magnetron sputtering.
The ZnO film constituent mass of described Ga doping is than being Ga 2o 3: ZnO=(0.5%～3%): (97%～99.5%).
In described step 2, the ZnO film thickness of Ga doping is 500～1200nm, and electrode spacing is 5～2000 μ m.
Annealing under oxygen atmosphere in described step 3, annealing temperature is 700～900 ℃, and to improve film quality, vacuum evaporation Al thickness of electrode is 100～300nm, and electrode spacing is 5～2000 μ m.
Beneficial effect of the present invention:
The present invention, by adopting the N-shaped ZnO film of the Ga doping of growing in quartz substrate as photoelectric functional layer, utilizes annealing in oxygen to improve film quality, has prepared the detector of ultraviolet band.Because the ZnO film adopting is N-shaped doping, its electron mobility is higher, and carrier transit time is short, so response speed is very fast.And the ultraviolet detector prepared of N-shaped ZnO film of doping, its high sensitivity, preparation is simple, and cost is low, in fields such as environmental protection, flame detecting, astronomy observation, biomedical research and health cares, has important application prospect.
Accompanying drawing explanation
Fig. 1 is curve time response under 355nm pulse laser irradiation of the fast response UV detector of ZnO film of mixing Ga.
Embodiment
Embodiment one
A manufacture method for the fast response UV detector that N-shaped is ZnO thin film doped, the method comprises following step:
Step 1, cleans up quartz substrate with acetone, ethanol, deionized water;
Step 2, in the quartz substrate cleaning up, the ZnO film of mixing Ga that is 500nm by magnetron sputtering apparatus grow thick, its ratio of component is Ga 2o 3: ZnO=1wt%: 99wt%;
Step 3 is annealed the ZnO film of growth Ga doping in oxygen, and annealing temperature is 830 ℃;
Step 4, on the ZnO film of the Ga doping after annealing, utilizes two Al electrodes that thermal evaporation apparatus evaporation thickness is 140nm, and the spacing of two Al electrodes is 200 microns.
The structure that above step is made into is from bottom to top successively: quartz substrate, the ZnO film of Ga doping, the ZnO thin film doped fast response UV detector of N-shaped of two Al electrodes.
Embodiment two
A manufacture method for the fast response UV detector that N-shaped is ZnO thin film doped, the method comprises following step:
Step 1, cleans up quartz substrate with hydrochloric acid, ethanol, deionized water;
Step 2, in the quartz substrate cleaning up, the ZnO film of mixing Ga that is 1000nm by magnetron sputtering apparatus grow thick, its ratio of component is Ga 2o 3: ZnO=3wt%: 97wt%;
Step 3 is annealed the ZnO film of growth Ga doping in oxygen, and annealing temperature is 700 ℃;
Step 4, on the ZnO film of the Ga doping after annealing, utilizing magnetron sputtering apparatus evaporation thick is two Al electrodes of 100nm, electrode spacing is 5 microns.
The structure that above step is made into is from bottom to top successively: quartz substrate, the ZnO film of Ga doping, the ZnO thin film doped fast response UV detector of N-shaped of two Al electrodes.
Embodiment three
A manufacture method for the fast response UV detector that N-shaped is ZnO thin film doped, the method comprises following step:
Step 1, cleans up quartz substrate with acetone, ethanol, isopropyl alcohol;
Step 2, in the quartz substrate cleaning up, the ZnO film of mixing Ga that is 1200nm by magnetron sputtering apparatus grow thick, its ratio of component is Ga 2o 3: ZnO=0.5wt%: 99.5wt%;
Step 3 is annealed the ZnO film of growth Ga doping in oxygen, and annealing temperature is 900 ℃; Step 4, on the ZnO film of the Ga doping after annealing, utilizing thermal evaporation apparatus evaporation thick is two Al electrodes of 200nm, two Al electrode spacings are 2000 microns.
The structure that above step is made into is from bottom to top successively: quartz substrate, the ZnO film of Ga doping, the fast response UV detector of the ZnO film of the Ga doping of two Al electrodes.
N-shaped of the present invention is ZnO thin film doped can be for the ZnO film of Ga doping, the ZnO of indium doping be thin, the ZnO film of aluminium doping.
By above-mentioned embodiment one, be prepared into the ZnO film fast response UV detector of Ga doping, its time response curve is as Fig. 1, by Fig. 1, its response speed be can obtain very fast, 10ns and 960ns are respectively 10%～90% rise time and 90%～10% pulse fall time

Claims (5)

1. a manufacture method for the ZnO thin film doped fast response UV detector of N-shaped, is characterized in that, comprises following step:
Step 1, cleans up quartz substrate with chemical cleaning method;
Step 2, the ZnO film of the Ga that grows in the quartz substrate cleaning up doping;
Step 3, puts into the ZnO film of growth Ga doping under oxygen atmosphere and anneals;
Step 4, two Al electrodes of evaporation on the ZnO film of the Ga doping after annealing;
Above step is made into structure successively from bottom to top: quartz substrate, the ZnO film of Ga doping, the ZnO thin film doped fast response UV detector of N-shaped of two Al electrodes.
2. the manufacture method of the ZnO thin film doped fast response UV detector of a kind of N-shaped according to claim 1, is characterized in that, the ZnO film of described Ga doping be with Grown by Magnetron Sputtering in quartz substrate.
3. the manufacture method of the ZnO thin film doped fast response UV detector of a kind of N-shaped according to claim 1, is characterized in that: the ZnO film constituent mass of described Ga doping is than being Ga 2o 3: ZnO=(0.5%～3%): (97%～99.5%).
4. the manufacture method of the ZnO thin film doped fast response UV detector of a kind of N-shaped according to claim 1, is characterized in that, in step 2, the ZnO film thickness of Ga doping is 500～1200nm, and electrode spacing is 5～2000 μ m.
5. the manufacture method of the ZnO thin film doped fast response UV detector of a kind of N-shaped according to claim 1, is characterized in that: annealing under oxygen atmosphere described in step 3, annealing temperature is 700～900 ℃.
CN201010173492.6A 2010-05-10 2010-05-10 Manufacturing method of fast response UV detector of n-type doped ZnO thin film Expired - Fee Related CN101866983B (en)

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CN102694052B (en) * 2011-03-22 2016-01-06 中国科学院微电子研究所 Semiconductor device and manufacture method thereof
CN102832269B (en) * 2011-06-17 2016-06-22 中国科学院微电子研究所 Photodetection lamination, semiconductor ultraviolet detection device and manufacture method thereof
CN102694067B (en) * 2012-05-23 2016-04-27 中国科学院苏州纳米技术与纳米仿生研究所 The preparation method of the detector of the ultraviolet two-color photoelectric respone of voltage modulated
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
US10126165B2 (en) 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
CN106449894B (en) * 2016-12-08 2017-10-03 西安电子科技大学 Ga based on double heterojunction2O3/ GaN/SiC photodetection diodes and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1718840A (en) * 2005-06-21 2006-01-11 山东大学 Preparation method of gallium adulterated zinc oxide transparent conductive film
CN101055843A (en) * 2007-05-11 2007-10-17 北京交通大学 Method for growing the ZnO thin film at the SiO2 underlay
CN101651148A (en) * 2009-09-10 2010-02-17 浙江大学 ZnO group heterojunction and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1718840A (en) * 2005-06-21 2006-01-11 山东大学 Preparation method of gallium adulterated zinc oxide transparent conductive film
CN101055843A (en) * 2007-05-11 2007-10-17 北京交通大学 Method for growing the ZnO thin film at the SiO2 underlay
CN101651148A (en) * 2009-09-10 2010-02-17 浙江大学 ZnO group heterojunction and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
余旭浒，等.射频磁控溅射制备ZnO：Ga透明导电膜及特性.《半导体学报》.2005,第26卷(第2期),摘要. *
邓宏,等.ZnO基紫外探测器研究进展.《物理》.2006,第35卷(第7期), *

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