CN109256438A - A kind of silicon substrate amorphous oxide gallium film solar blind light electric transistor and its manufacturing method - Google Patents
A kind of silicon substrate amorphous oxide gallium film solar blind light electric transistor and its manufacturing method Download PDFInfo
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- CN109256438A CN109256438A CN201811120817.7A CN201811120817A CN109256438A CN 109256438 A CN109256438 A CN 109256438A CN 201811120817 A CN201811120817 A CN 201811120817A CN 109256438 A CN109256438 A CN 109256438A
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- 239000000758 substrate Substances 0.000 title claims abstract description 64
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 21
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 18
- 229910052681 coesite Inorganic materials 0.000 claims description 27
- 229910052906 cristobalite Inorganic materials 0.000 claims description 27
- 229910052682 stishovite Inorganic materials 0.000 claims description 27
- 229910052905 tridymite Inorganic materials 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 17
- 239000010409 thin film Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000000825 ultraviolet detection Methods 0.000 abstract description 3
- 238000004153 renaturation Methods 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The present invention provides a kind of silicon substrate amorphous oxide gallium film solar blind light electric transistor and its manufacturing methods.The phototransistor includes the hearth electrode being sequentially stacked, silicon-based substrate, gallium oxide film and top electrode.Wherein silicon-based substrate is the silicon-based substrate with silicon dioxide layer, and gallium oxide film is the amorphous oxide gallium film of room temperature growth.Commercialized preparation method Grown by Magnetron Sputtering film can be used in the present invention, and process controllability is strong, easy to operate, low manufacture cost.Gallium oxide film surface produced by the present invention is fine and close, thickness stable uniform, is suitable for large area preparation and renaturation is good.Phototransistor responsiveness produced by the present invention is high, UV, visible light inhibits than high, manufacturing process is simple, and material therefor is easy to get, and has potential application prospect in day blind ultraviolet detection field.
Description
Technical field
The invention belongs to photodetector technical fields, in particular to a kind of to utilize magnetron sputtering deposition method in titanium dioxide
Silicon/silicon (SiO2/ Si) amorphous oxide gallium (Ga is grown on substrate2O3) film method, and application amorphous oxide gallium film
Phototransistor.
Background technique
Advection ozone layer in atmosphere has strong absorption to ultraviolet light of the wavelength between 200nm to 280nm,
The ultraviolet radiation for being in the wave band for reaching ground almost decays to zero near sea level, therefore is referred to as day-old chick, this is just
Day to work in the wave band is blind-and ultraviolet photoelectric examining system provides a good signal background.With day blind-ultraviolet spy
The development of survey technology, day it is blind-Ultraviolet Communication, missile warning tracking, rocket wake flame detection, the ultraviolet early warning of space-based, ultraviolet excess
Spectral reconnaissance, warship guidance, corona detection, maritime search and rescue etc. are military has a wide range of applications with civil field.It realizes
Day blind ultraviolet detection, the forbidden bandwidth of device core semiconductor material are greater than 4.4eV (corresponding detection wavelength 280nm), and
Ga2O3Forbidden bandwidth be about 4.9eV, exactly correspond to day-old chick, exciton bind energy is up to 40~50meV at room temperature, is much higher than
The hot ionization energy of room temperature (26meV), and there is excellent thermal stability and chemical stability, it is to prepare photodetector, especially
The natural ideal material of solar blind ultraviolet detector part.
The gallium oxide film day reported at present is blind-and the structure of ultraviolet detector mainly has metal-semiconductor-metal type, Xiao
Special base junction type, hetero-junctions and avalanche diode type.Metal-semiconductor-metal type device have simple process, be advantageously integrated it is excellent
Gesture, but without internal gain, it is poor to the detectivity of faint optical signal, be difficult to obtain high Photoresponse.It is Schottky, heterogeneous
Knot and avalanche-type devices use finish the photo-generated carrier multiplication effect of effect and the modulating action to carrier transport, tend to
Higher photocurrent gain and faster response speed are enough obtained, but Schottky and heterojunction type internal gain are limited, avalanche-type
Then internal noise is big for device, need high operating voltage and preparation process is complicated.Solar blind light electric transistor, collection photodetection and
Transistor, which to photoelectric current amplifies, to be obtained high photocurrent gain and can also effectively avoid the interference of noise signal.It compares
In hetero-junctions/avalanche-type device, the detecting function area of optotransistor feature detector and substrate be it is relatively independent, by multiple devices
It when part is integrated into detector array, will not be interfered with each other between individual devices, reduce the complexity of technique.
Currently based on the day of gallium oxide film, the research of blind ultraviolet detection is still in infancy, and is concentrated mainly on based on height
The monocrystalline or polycrystalline gallium oxide film grown under the conditions of temperature, but high growth temperature equipment price is expensive, and growth conditions requires also higher.
How to develop that preparation is simple, cost is relatively low and the process of performance higher gallium oxide film base day blind detector, is still
Industry urgent problem to be solved.
Summary of the invention
In order to solve the above technical problems, the present invention proposes a kind of silicon substrate amorphous oxide gallium film photoelectric crystal of room temperature growth
Pipe and its manufacturing method, can be applied to solar blind UV electric transistor detector.
The present invention is in SiO2Amorphous oxide gallium film solar blind UV electric transistor detector is prepared for on/Si substrate.It should
Invention is amorphous oxide gallium film base photo transistor detector, and the preparation of especially solar blind UV electric transistor detector mentions
It is supported for theory and technology.
Amorphous oxide gallium film solar blind light electric transistor detector of the invention, including be sequentially stacked hearth electrode, substrate,
Gallium oxide film and top electrode, the gallium oxide film are noncrystal membrane, and the substrate is SiO2/ Si substrate, the SiO2/ Si lining
Bottom includes the SiO on top2The Si layer of layer and lower part.
According to the preferred embodiment of the present invention, the SiO2The SiO of/Si substrate2Layer is with a thickness of 150nm to 300nm.
According to the preferred embodiment of the present invention, the bottom electrode includes Au layers, and upper electrode includes Au layers or Au/Ti
Layer.
According to the preferred embodiment of the present invention, the amorphous oxide gallium film with a thickness of 500nm to 800nm.
The present invention also proposes a kind of manufacturing method of silicon substrate amorphous oxide gallium film solar blind light electric transistor, comprising: is serving as a contrast
Gallium oxide film is grown on bottom；Hearth electrode is formed at the back of substrate；Top electrode, the gallium oxide are formed on gallium oxide film
Film is amorphous oxide gallium film, and the substrate is SiO2/ Si substrate, the SiO2/ Si substrate includes the SiO on top2Layer and lower part
Si layer.
According to the preferred embodiment of the present invention, described the step of growing gallium oxide film on substrate is to adopt at room temperature
Amorphous oxide gallium film is grown with magnetron sputtering method.
According to the preferred embodiment of the present invention, it is Ar gas that the growth parameter(s) of the magnetron sputtering method, which includes: work atmosphere,.
According to the preferred embodiment of the present invention, the growth parameter(s) of the magnetron sputtering method further include: sputtering power 60W
~100W.
According to the preferred embodiment of the present invention, the growth parameter(s) of the magnetron sputtering method further include: operating air pressure is
0.01Pa~10Pa.
According to the preferred embodiment of the present invention, the growth parameter(s) of the magnetron sputtering method further include: the SiO2/ Si lining
The SiO at bottom2Layer is with a thickness of 150nm to 300nm.
The beneficial effects of the present invention are:
1. preparation process of the present invention is simple, using commercialized preparation method Grown by Magnetron Sputtering film, substrate used is
Commercial product, growth temperature is low, process controllability is strong, easy to operate, the densification of gained film surface, thickness stable uniform, can big face
Product prepares, is reproducible.
2. the resulting amorphous oxide gallium film solar blind UV electric transistor detector responsivity high gain of the present invention, dark electricity
It flowing small, shows good grid voltage ability of regulation and control, UV, visible light inhibits than high, and manufacturing process is simple, and material therefor is easy to get,
With vast potential for future development.
Detailed description of the invention
Fig. 1 is the silicon substrate amorphous oxide gallium film solar blind light electric transistor of the method preparation of one embodiment through the invention
Structural schematic diagram；
Fig. 2 is that silicon substrate amorphous oxide gallium film solar blind light electric transistor made from the method with one embodiment of the invention exists
I-V curve under no light, different back-gate voltages；
Fig. 3 is that silicon substrate amorphous oxide gallium film solar blind light electric transistor made from the method with one embodiment of the invention exists
Transfer characteristic curve under no light, difference 254nm wavelength intensity of illumination.；
Fig. 4 is that silicon substrate amorphous oxide gallium film solar blind light electric transistor made from the method with one embodiment of the invention exists
I-T curve when backgate pressure is 10V, difference 254nm wavelength intensity of illumination；
Fig. 5 is that silicon substrate amorphous oxide gallium film solar blind light electric transistor made from the method with one embodiment of the invention exists
Intensity of illumination is 0.1mW/cm2254nm wavelength light source irradiation under, the I-T curve under different back-gate voltages.
Specific embodiment
Generally speaking, the present invention propose one kind in silicon-based substrate room temperature growth amorphous oxide gallium film and make photoelectricity crystalline substance
The photo transistor detector of method and this method production of body pipe detector.
Silicon-based substrate of the invention is preferably SiO2/ Si substrate, the SiO2/ Si indicates SiO2Layer and Si layers of bilayer
Structure, Si layers are bottom, SiO2Layer is superficial layer, SiO2Layer is used as dielectric layer, and Si layers are used as SiO together with lower electrode2Dielectric layer
Lower electrode.Using SiO2The advantages of/Si substrate is that the surface Si can naturally occur SiO2Dielectric layer can be used as transistor gate,
SiO2/ Si substrate is cheap, and better performances.
The present invention preferably grows gallium oxide film as light using magnetically controlled sputter method in silicon-based substrate at room temperature
Photosensitive layer.Because the condition of magnetically controlled sputter method growth is easy to control, reproducible, it is suitable for being mass produced that stability is high.
Also, due to amorphous oxide gallium film preparation temperature bottom, cost is cheap, and aoxidizes with the polycrystalline gallium oxide or monocrystalline of high growth temperature
Gallium performance is similar, preferably grows the gallium oxide film of amorphous at room temperature.
The present invention, as back grid, passes through the side of magnetron sputtering in silicon substrate backside deposition metal electrode again on a photoresist layer
Method splash-proofing sputtering metal electrode (such as Au layers and/or Ti layers of source-drain electrode), to obtain solar blind UV electric transistor detector.
The solar blind ultraviolet detector being prepared by the method for the invention, structure are MSM type sandwich structure, from top to bottom
It is hearth electrode, silicon-based substrate, amorphous oxide gallium film and top electrode respectively.
Further illustrate that the present invention, the embodiment are a kind of to prepare day blind purple below in conjunction with attached drawing and by specific embodiment
The method of outer photoelectric crystal detector, this method comprises the following steps:
(1) a piece of 10mm × 10mm × 0.5mm size SiO is taken2/ Si substrate, SiO2With a thickness of 300nm.Successively by substrate
Ultrasound 15 minutes respectively are immersed in 15 milliliters of acetone, dehydrated alcohol, deionized water, again with the deionized water of flowing after taking-up
It rinses, finally with dry N2Air-blowing is dry, waits and using in next step.
(2) by the above-mentioned SiO cleaned up2/ Si substrate is put into settling chamber, grows amorphous oxygen on it using magnetron sputtering
Change gallium film, with the Ga of 99.99% purity2O3Ceramics are target, and the specific growth parameter(s) of magnetron sputtering technique is as follows: back end is true
Pneumatics is by force less than 1 × 10-4Pa, work atmosphere are Ar gas, and operating air pressure 1Pa, underlayer temperature is room temperature, sputtering power 80W,
Sputtering time is 300min, the thickness about 800nm of obtained amorphous oxide gallium film.
(3) back-gate electrode is grown in the amorphous oxide gallium film silicon substrate substrate back of above-mentioned preparation, using magnetron sputtering side
Method sputters Au electrode, thickness about 100nm.Sputtering technology condition is as follows: back end vacuum is 1 × 10-4Pa, underlayer temperature are room temperature,
Work atmosphere is Ar gas, operating air pressure 3Pa, sputtering power 40W, sputtering time 100s.
(3) it is blocked in the metal mask plate of the amorphous oxide gallium film surface hollow out of above-mentioned preparation, using magnetron sputtering
Method is in film surface successive splash-proofing sputtering metal Ti layers (about 10nm) and Au layers (about 20nm) the acquisition source Au/Ti-drain electrodes, source-leakage
The length of metal electrode is 200 μm, and spacing is 200 μm, and photosensitive area is 200 μm of 200 μ m.Sputtering technology condition is as follows: back
Bottom vacuum is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 3Pa, sputtering power 40W, Ti
The sputtering time of layer is 10s, and Au layers of sputtering time is 20s.
Silicon substrate amorphous oxide gallium film solar blind light electric transistor is prepared through the above steps as shown in Figure 1, including bottom
Electrode G, SiO2/ Si substrate 1, amorphous oxide gallium film 2 and source electrode S and drain electrode D.SiO2/ Si substrate includes the Si layer of lower part
11 and top SiO2Layer 12.Test voltage is added in source electrode S and the both ends drain electrode D, electric current then flows into from positive electrode, passes through
Photosensitive layer amorphous oxide gallium film 2 is flowed out from negative electrode, while can be inclined in hearth electrode G and the two sides drain electrode D Applied gate
Pressure constitutes solar blind UV trnasistor detector.
Fig. 2 gives silicon substrate amorphous oxide gallium film solar blind light electric transistor under dark condition, different back gate voltages
I-V characteristic curve, under dark condition, the electric current of amorphous oxide gallium film is all very small, and back-gate voltage is to film sample
Interior carrier concentration regulating effect is obvious.
Fig. 3 gives silicon substrate amorphous oxide gallium film solar blind light electric transistor in no light, difference 254nm wavelength light photograph
Transfer characteristic curve under intensity, it can be seen from the figure that source-leakage current in device increases with the increase of positive grid voltage
Add；When loading negative sense grid voltage, source-leakage current variation is smaller；This shows that the type of device of the embodiment is the enhanced field of n-channel
Effect transistor.
It is 10V, difference 254nm wavelength that Fig. 4, which gives silicon substrate amorphous oxide gallium film solar blind light electric transistor in backgate pressure,
I-T curve when intensity of illumination, it can be seen that source-leakage current gradually increases as intensity of illumination increases.
It is being 0.1mW/cm in intensity of illumination that Fig. 5, which gives silicon substrate amorphous oxide gallium film solar blind light electric transistor,2's
Under the irradiation of 254nm wavelength light source, the I-T curve under different back-gate voltages, it can be seen that source-leakage current is strong with back gate voltage
Degree increases and gradually increases.Show good grid voltage ability of regulation and control；Bigger grid voltage is modulated lower device and can be obtained more greatly
Photocurrent gain, become larger to 254nm optical responsivity.
For specific embodiment disclosed in above-described embodiment, those skilled in the art can become in a certain range
Change, specific as follows: according to the preferred embodiment of the present invention, the SiO2The SiO of/Si substrate2Layer with a thickness of 150nm extremely
300nm；The target is the Ga of 99.99% purity2O3Ceramic target；The magnetron sputtering deposition process work atmosphere is Ar gas,
It is 0.01Pa~10Pa, preferably 1Pa that film, which grows operating air pressure,.The underlayer temperature be room temperature, sputtering power be 60W~
100W, preferably 80W, sputtering time are preferably 300 minutes.Obtained β-Ga2O3The thickness of film be preferably 500nm extremely
800nm。
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of silicon substrate amorphous oxide gallium film solar blind light electric transistor, hearth electrode, substrate, gallium oxide including being sequentially stacked are thin
Film and top electrode, it is characterised in that: the gallium oxide film is noncrystal membrane, and the substrate is SiO2/ Si substrate, the SiO2/Si
Substrate includes the SiO on top2The Si layer of layer and lower part.
2. silicon substrate amorphous oxide gallium film solar blind light electric transistor as described in claim 1, it is characterised in that: the SiO2/Si
The SiO of substrate2Layer is with a thickness of 150nm to 300nm.
3. silicon substrate amorphous oxide gallium film solar blind light electric transistor as described in claim 1, it is characterised in that: the hearth electrode
Including Au layers, top electrode includes Au layers or Au/Ti layers.
4. silicon substrate amorphous oxide gallium film solar blind light electric transistor as described in claim 1, it is characterised in that: the amorphous oxygen
Change gallium film with a thickness of 500nm to 800nm.
5. a kind of manufacturing method of silicon substrate amorphous oxide gallium film solar blind light electric transistor, comprising: grow gallium oxide on substrate
Film；Hearth electrode is formed at the back of substrate；Top electrode is formed on gallium oxide film, it is characterised in that: the gallium oxide is thin
Film is amorphous oxide gallium film, and the substrate is SiO2/ Si substrate, the SiO2/ Si substrate includes the SiO on top2Layer and lower part
Si layers.
6. the manufacturing method of amorphous oxide gallium film as claimed in claim 5, it is characterised in that: the growth of oxygen on substrate
The step of changing gallium film is at room temperature using magnetron sputtering method growth amorphous oxide gallium film.
7. the manufacturing method of amorphous oxide gallium film as claimed in claim 6, it is characterised in that: the life of the magnetron sputtering method
Long parameter includes: that work atmosphere is Ar gas.
8. the manufacturing method of amorphous oxide gallium film as claimed in claim 7, it is characterised in that: the life of the magnetron sputtering method
Long parameter further include: sputtering power is 60W~100W.
9. the manufacturing method of amorphous oxide gallium film as claimed in claim 8, it is characterised in that: the life of the magnetron sputtering method
Long parameter further include: operating air pressure is 0.01Pa~10Pa.
10. the manufacturing method of the amorphous oxide gallium film as described in any one of claim 5 to 9, it is characterised in that: described
SiO2The SiO of/Si substrate2Layer is with a thickness of 150nm to 300nm.
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