CN108666395A - Solar blind UV electric explorer and preparation method thereof based on amorphous oxide gallium film - Google Patents
Solar blind UV electric explorer and preparation method thereof based on amorphous oxide gallium film Download PDFInfo
- Publication number
- CN108666395A CN108666395A CN201810510314.4A CN201810510314A CN108666395A CN 108666395 A CN108666395 A CN 108666395A CN 201810510314 A CN201810510314 A CN 201810510314A CN 108666395 A CN108666395 A CN 108666395A
- Authority
- CN
- China
- Prior art keywords
- amorphous oxide
- substrate
- film
- solar blind
- interdigital
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 23
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 26
- 230000004044 response Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005535 GaOx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses the solar blind UV electric explorers and preparation method thereof based on amorphous oxide gallium film, belong to photodetector technical field.This method uses the Al of (0001) crystal face2O3It is cleaned as substrate, and to substrate；Then the substrate cleaned up is sent into settling chamber, applies radiofrequency magnetron sputtering technology to grow gallium oxide film on substrate；The interdigital mask plate shielding of hollow out is finally used on amorphous oxide gallium film, one layer of interdigital metal electrode is sputtered on interdigital mask plate using DC magnetron sputtering method, solar blind UV electric explorer is obtained, structure is MSM type sandwich structures, is Al respectively from top to bottom2O3Substrate, amorphous state gallium oxide thin-film material, the interdigital metal electrodes of Ti/Au.Manufacturing process of the present invention is simple, reproducible, and dark current is small, and stability is high, fast response time, and UV, visible light inhibits than high, to meet the theory of energy-saving and emission-reduction, suitable for being mass produced, have vast potential for future development.
Description
Technical field
The invention belongs to photodetector technical fields, and in particular to a kind of day based on amorphous oxide gallium film is blind ultraviolet
The preparation method of photodetector.
Background technology
Solar blind ultraviolet detector is a kind of very important optoelectronic sensor, is had become after infrared and laser detector
Another important photodetector after technology suffers from more wide in military, civilian, scientific research and industrial circle
Application.Mainly there are silicon substrate ultraviolet phototube and photomultiplier using more solar blind ultraviolet detector currently on the market, makes
It is quite ripe to make technology, but due to the limitation of material itself, it is low frangible that there are hardness, volume is heavy, easy to aging, efficiency compared with
It is low, it is expensive the shortcomings of.In recent years, wide bandgap semiconductor material, such as SiC, GaN, AlGaN and diamond, though there is band
The advantages that gap is wide, and critical breakdown electric field is high, and thermal conductivity is high, however the production cost of these materials is high, growth conditions is harsh, unfavorable
In being commercially produced.
Due to the presence of Ozone in Atmosphere layer, wavelength in 200nm-280nm sections of ultraviolet light by the strong absorption of ozone layer,
In earth's surface almost without the ultraviolet light of 200nm-280nm, therefore, the ultraviolet light of the wave band is referred to as " day blind ultraviolet light ".Oxidation
Gallium (Ga2O3) be gallium oxide in one of most stable of structure, be a kind of wide bandgap semiconductor, energy gap is 4.8~
5.2eV, corresponding absorbing wavelength about 254nm, therefore visible light is not absorbed, and have in solar blind UV part very strong
Absorbability.In addition, its unique optics, electric property and excellent chemical stability and thermal stability, in day-old chick
Unique excellent performance and the at different temperature characteristic with different its lower photoelectric properties of atmosphere variation, even more draw
The extensive concern of people is played.
The gallium oxide solar blind UV electric explorer reported grows highly crystalline quality under the conditions of main researching high-temperature
Monocrystalline gallium oxide (β-Ga2O3), however know little to the gallium oxide of lower temperature growth, and grow gallium oxide mainstream and use arteries and veins
Laser deposition technique is rushed, the technology is more harsh to the condition in laboratory, and common lab is difficult to have corresponding condition, growth
Monocrystalline gallium oxide size out is smaller, and dark current is larger, and response speed is slower.
Invention content
The gallium oxide ultraviolet detector growth temperature in order to solve above-mentioned existing high temperature crystallization of the present invention is high, dark current compared with
Greatly, UV, visible light inhibits to provide a kind of solar blind UV electricity based on amorphous oxide gallium film than the shortcomings of small, response speed is slow
Detector and preparation method thereof.
The preparation method of the solar blind UV electric explorer based on amorphous oxide gallium film, is as follows：
Step 1：Using c-plane sapphire, i.e. the Al of (0001) crystal face2O3It is cleaned as substrate, and to substrate；Cleaning
Process is as follows：
Substrate is immersed in successively in the acetone, absolute ethyl alcohol and deionized water of 15mL and is cleaned by ultrasonic 15min respectively, taken out
It is rinsed afterwards with the deionized water of flowing, then uses dry N2Air-blowing is dry, waits for and using in next step；
Step 2：The substrate cleaned up is sent into settling chamber, applies radiofrequency magnetron sputtering technology to grow on substrate
Gallium oxide film；
The design parameter of magnetron sputtering technique is as follows：Vacuumize first, make after vacuumizing pressure in cavity be less than 1 ×
10-4Pa, work atmosphere are Ar gas and O2Gas, Ar：O2=24sccm：4sccm, operating air pressure 2.0Pa, underlayer temperature are
723K, sputtering power 60W, sputtering time 120min；The thickness about 200nm of obtained amorphous oxide gallium film.
Step 3：The interdigital mask plate shielding of hollow out will be used on the amorphous oxide gallium film prepared in step 2, using straight
Stream magnetically controlled sputter method sputters one layer of interdigital metal electrode on interdigital mask plate, and the solar blind UV electrical resistivity survey for obtaining the present invention is surveyed
Device.The interdigital metal electrode overall thickness 30nm, by sequence from the bottom up：It it is Ti layers close to gallium oxide film, thickness is
10nm；It is Au layers on Ti layers, thickness 20nm.The finger beam of interdigital metal electrode is 200 μm, refers to a length of 2800 μm, each interdigital
Spacing is 200 μm, and photosensitive area is 1200 μm of 2800 μ m.
The DC magnetron sputtering method is in base vacuum pressure 1 × 10-4Under the conditions of Pa, it is Ar to be passed through sputter gas
Gas, sputtering sedimentation chamber pressure keep being about 3Pa, and underlayer temperature is room temperature, sputtering power 40W, sputtering time 30s, wherein
Ti layers of sputtering time is 10s, and Au layers of sputtering time is 20s.
The solar blind UV electric explorer being prepared by the method for the invention, structure are MSM (metal-semiconductors-gold
Belong to) type sandwich structure is sapphire (Al respectively from top to bottom2O3) substrate, amorphous state gallium oxide thin-film material (~200nm),
The interdigital metal electrodes of Ti/Au.
The advantage of the invention is that：
(1) present invention applies magnetron sputtering technique, growth amorphous oxide gallium film only to need 723K, and growth temperature is relatively low, and
And the film grown is homogeneous, the condition of growth is easy to control, reproducible, and stability is high, meets the reason of energy-saving and emission-reduction
It reads, suitable for being mass produced.
(2) the amorphous oxide gallium solar blind UV electric explorer responsiveness of the MSM structures of present invention gained is high, response speed
Soon, dark current is small, and UV, visible light inhibits than high, and manufacturing process is simple, and material therefor is easy to get, before having wide development
Scape.
Description of the drawings
Fig. 1 is amorphous oxide gallium (GaO prepared by the method for the present inventionx) solar blind UV electric explorer structural schematic diagram；
Fig. 2 is Sapphire Substrate, amorphous oxide gallium (GaOx) and β-Ga2O3XRD diffraction patterns；
Fig. 3 is the amorphous oxide gallium solar blind UV electric explorer of the method for the present invention preparation in no light, identical illumination
Under the conditions of 365nm and 254nm I-V curve；
Fig. 4 is that amorphous oxide gallium solar blind UV electric explorer prepared by the method for the present invention is close in 5V biass and luminous power
Degree is 1mW/cm2254nm and 365nm illumination under I-T curves；
Fig. 5 is that 248nm of the amorphous oxide gallium solar blind UV electric explorer of the method for the present invention preparation under 5V biass swashs
Under light irradiation, the response time fitted figure for the I-T curves that oscillograph is tested is used.
Specific implementation mode
Below by specific example and attached drawing, the present invention is further detailed.
The present invention is in order to which the gallium oxide ultraviolet detector growth temperature for solving existing high temperature crystallization is high, dark current is larger, purple
Outer visible inhibition provides a kind of solar blind UV electrical resistivity survey survey based on amorphous oxide gallium film than the shortcomings of small, response speed is slow
Device and preparation method thereof can grow homogeneous amorphous oxide gallium film at low temperature using magnetron sputtering technique, raw
Long condition is easy to control, reproducible, and stability is high, suitable for being mass produced.
Embodiment
In the present embodiment, the preparation method of the solar blind UV electric explorer based on amorphous oxide gallium film, specific steps
It is as follows：
Step 1：It is substrate to choose a piece of c-plane sapphire, and cleaning process is as follows：
Substrate is immersed in successively in the acetone, absolute ethyl alcohol, deionized water of about 15mL and is cleaned by ultrasonic each 15min respectively,
It is rinsed with the deionized water of flowing after taking-up, then uses dry N2Air-blowing is dry, waits for and using in next step；
Step 2：The Sapphire Substrate cleaned up is sent into settling chamber, applies magnetron sputtering technique to grow on it
Amorphous state gallium oxide film；Growth uses high-purity gallium oxide target (~99.99%), can obtain out under cryogenic pure
Net amorphous state gallium oxide film.
Magnetron sputtering technique design parameter is as follows：The pressure in cavity is set to be less than 1 × 10 after vacuumizing-4Pa, work atmosphere
For Ar gas and O2Gas, Ar：O2=6:1(24sccm：4Sccm), operating air pressure 2.0Pa, underlayer temperature 723K, sputtering power
For 60W, sputtering time 120min, the thickness about 200nm of obtained amorphous oxide gallium film.
Step 3：The amorphous oxide gallium film grown is blocked with interdigitated mask plate, using magnetically controlled DC sputtering side
Method successively sputters the Au layers of Ti layers of the metal and thickness 20nm of thickness 10nm, and it is about 30nm interdigitateds Ti/Au to obtain a thickness
Metal electrode refers to 2800 μm of length wherein the finger beam of interdigital metal electrode is 200 μm, and photosensitive area is 1200 μm of 2800 μ m；
Growth interdigital electrode actual conditions be：Base vacuum pressure 1 × 10-4Pa, it is Ar gas, sputtering to be passed through sputter gas
It deposits chamber pressure and keeps being about 3Pa, underlayer temperature is room temperature, sputtering power 40W, and sputtering time 30s, wherein Ti layers splash
It is 10s to penetrate the time, and Au layers of sputtering time is 20s.
Amorphous oxide gallium film solar blind UV electric explorer obtained is as shown in Figure 1, in interdigital electricity through the above steps
The additional 5V biass in pole both sides, electric current are then flowed into from positive electrode, by amorphous oxide gallium film, are flowed out from negative electrode, are constituted metal-
Semiconductor-metal (MSM) type solar blind UV electric explorer.
As shown in Fig. 2, three curves respectively represent Sapphire Substrate successively from top to bottom, gallium oxide when 723K and 1023K
The XRD diffraction patterns of film, as seen from the figure when growth temperature is 723K, film does not occur the corresponding characteristic peak of gallium oxide,
Show that gallium oxide film does not crystallize, and when growth temperature is 1023K, occurWithIt is right
It should be in β phases Ga2O3Diffraction maximum, thus may determine that the gallium oxide grown under the conditions of temperature is 723K is amorphous state.
Fig. 3 gives in 5V biass and the I-V curve under the illumination of identical light intensity, with the increase of forward bias, light
Electric current has apparent increase, in 5V, I(254nm)/I(dark)=400.58, I(365nm)/I(dark)=1.75, wherein dark current is only
There is 0.5nA, shows that thin-film material has strong response to the ultraviolet light of 254nm, it is insensitive to the light of 365nm, almost do not ring
It answers.
Fig. 4 is 5V biass and optical power density is 1mW/cm2254nm illumination under I-T curves, pass through the pass of ultraviolet lamp
The I-T cycles for opening 10 periods of alternately testing find that the stability of the sample is good and has repeatability.
In order to further prove the practicability of the sample, the laser illumination sample surfaces of present invention application 248nm wavelength,
Connection oscillograph tests the response time of amorphous oxide gallium.Wherein, the rising response time is defined as from maximum photoelectric current
10% to 90% time undergone, die-away time are defined as the time undergone from 90% to the 10% of maximum photoelectric current.Such as
Shown in Fig. 5, under the pulse irradiation of the laser of 248nm, rise response time (τr) and die-away time (τd) respectively 0.016 μ s and
175.97 μ s, it is seen that amorphous oxide gallium film is very fast to solar blind UV response speed, high sensitivity, is particularly suitable for making day
Blind UV electric explorer.
It illustrates, is not intended to limit the scope of the invention the above is only the implementation of the present invention, it is every to utilize this
Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content, it is relevant to be applied directly or indirectly in other
Technical field is included within the scope of the present invention.
Claims (6)
1. the preparation method of the solar blind UV electric explorer based on amorphous oxide gallium film, which is characterized in that specific steps are such as
Under：
Step 1：Using c-plane sapphire, i.e. the Al of (0001) crystal face2O3It is cleaned as substrate, and to substrate；Then with dry
Dry N2Air-blowing is dry, waits for and using in next step；
Step 2：The substrate cleaned up is sent into settling chamber, applies radiofrequency magnetron sputtering technology growth oxidation on substrate
Gallium film；The thickness of obtained amorphous oxide gallium film is 200nm；
Step 3：The interdigital mask plate shielding of hollow out will be used on the amorphous oxide gallium film prepared in step 2, using DC magnetic
Control sputtering method sputters one layer of interdigital metal electrode on interdigital mask plate, obtains solar blind UV electric explorer；
The interdigital metal electrode overall thickness 30nm, by sequence from the bottom up：It is Ti layers close to amorphous oxide gallium film, it is thick
Degree is 10nm；It is Au layers on Ti layers, thickness 20nm；The finger beam of interdigital metal electrode is 200 μm, refers to a length of 2800 μm, each to pitch
The spacing of finger is 200 μm, and photosensitive area is 1200 μm of 2800 μ m.
2. the preparation method of the solar blind UV electric explorer as described in claim 1 based on amorphous oxide gallium film, special
Sign is that the cleaning process described in step 1 is as follows：
Substrate is immersed in successively in the acetone, absolute ethyl alcohol and deionized water of 15mL and is cleaned by ultrasonic 15min respectively, used after taking-up
The deionized water of flowing is rinsed.
3. the preparation method of the solar blind UV electric explorer as described in claim 1 based on amorphous oxide gallium film, special
Sign is that the design parameter of the radiofrequency magnetron sputtering technology described in step 2 is as follows：Growth uses high-purity gallium oxide target, first
It first vacuumizes, the pressure in cavity is made to be less than 1 × 10 after vacuumizing-4Pa, work atmosphere are Ar gas and O2Gas, Ar：O2=
24sccm：4sccm, operating air pressure 2.0Pa, underlayer temperature 723K, sputtering power 60W, sputtering time 120min.
4. the preparation method of the solar blind UV electric explorer as described in claim 1 based on amorphous oxide gallium film, special
Sign is that the DC magnetron sputtering method described in step 3 is in base vacuum pressure 1 × 10-4Under the conditions of Pa, it is passed through sputtering gas
Body is Ar gas, and sputtering sedimentation chamber pressure remains 3Pa, and underlayer temperature is room temperature, sputtering power 40W, sputtering time 30s,
Wherein Ti layers of sputtering time is 10s, and Au layers of sputtering time is 20s.
5. the solar blind UV electric explorer based on amorphous oxide gallium film, which is characterized in that concrete structure is that " metal-is partly led
Body-metal " type sandwich structure is Al respectively from top to bottom2O3Substrate, amorphous state gallium oxide film and the interdigital metal electricity of Ti/Au
Pole.
6. the solar blind UV electric explorer as claimed in claim 5 based on amorphous oxide gallium film, which is characterized in that described
Solar blind UV electric explorer in, the interdigital metal electrode of thickness 200nm, the Ti/Au of amorphous oxide gallium film is close
Amorphous oxide gallium film is Ti layers, thickness 10nm；It is Au layers on Ti layers, thickness 20nm；The interdigital metal electrodes of Ti/Au
Finger beam is 200 μm, refers to a length of 2800 μm, and each interdigital spacing is 200 μm, and photosensitive area is 1200 μm of 2800 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810510314.4A CN108666395A (en) | 2018-05-24 | 2018-05-24 | Solar blind UV electric explorer and preparation method thereof based on amorphous oxide gallium film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810510314.4A CN108666395A (en) | 2018-05-24 | 2018-05-24 | Solar blind UV electric explorer and preparation method thereof based on amorphous oxide gallium film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108666395A true CN108666395A (en) | 2018-10-16 |
Family
ID=63777691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810510314.4A Pending CN108666395A (en) | 2018-05-24 | 2018-05-24 | Solar blind UV electric explorer and preparation method thereof based on amorphous oxide gallium film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108666395A (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110061089A (en) * | 2019-03-18 | 2019-07-26 | 北京镓族科技有限公司 | The method that sapphire miscut substrate optimizes the growth of gallium oxide film and solar blind ultraviolet detector performance |
| CN110323291A (en) * | 2019-04-22 | 2019-10-11 | 湖北大学 | Based on (GaY)2O3High-gain solar blind UV detector of noncrystal membrane and preparation method thereof |
| CN110350043A (en) * | 2019-06-20 | 2019-10-18 | 北京邮电大学 | A kind of self assembly crystallization/amorphous oxide gallium mutually ties photodetector and its manufacturing method |
| CN110444618A (en) * | 2019-08-09 | 2019-11-12 | 南京大学 | Solar blind ultraviolet detector and preparation method thereof based on amorphous oxide gallium film |
| CN110752267A (en) * | 2019-10-08 | 2020-02-04 | 郑州大学 | Three-dimensional solar blind photoelectric detector based on gallium oxide |
| CN111293181A (en) * | 2020-02-18 | 2020-06-16 | 湖北大学 | MSM type α -Ga2O3Basic solar blind ultraviolet detector |
| CN111697090A (en) * | 2019-03-14 | 2020-09-22 | 中国科学院物理研究所 | Amorphous Ga2O3Photoelectric detector, manufacturing method thereof and performance improving method |
| CN112420876A (en) * | 2020-12-03 | 2021-02-26 | 哈尔滨工业大学 | Preparation method of broadband detector from solar blind ultraviolet to near infrared |
| CN112563353A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Heterojunction ultraviolet detector and preparation method thereof |
| CN113380906A (en) * | 2021-05-26 | 2021-09-10 | 浙江大学 | Transparent ultraviolet photoelectric detector based on metal-semiconductor-metal structure |
| CN113451447A (en) * | 2021-06-30 | 2021-09-28 | 南方科技大学 | Deep ultraviolet amorphous gallium oxide photoelectric detector and preparation method and application thereof |
| CN113517366A (en) * | 2021-05-20 | 2021-10-19 | 西安电子科技大学 | Novel heterojunction photoelectric detector and preparation method thereof |
| CN113659020A (en) * | 2021-02-26 | 2021-11-16 | 松山湖材料实验室 | Solar blind ultraviolet detector, preparation method thereof and solar blind ultraviolet detection method |
| CN113707760A (en) * | 2021-07-20 | 2021-11-26 | 青岛滨海学院 | Based on beta-Ga2O3Three-port ultraviolet light detector of/MgO heterojunction and manufacturing method thereof |
| CN113823707A (en) * | 2020-06-03 | 2021-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Integrated device based on gallium oxide and gallium nitride and preparation method thereof |
| CN114530519A (en) * | 2020-11-23 | 2022-05-24 | 中国科学院宁波材料技术与工程研究所 | Self-driven MSM ultraviolet detector and preparation method thereof |
| CN114725234A (en) * | 2022-03-23 | 2022-07-08 | 电子科技大学 | Based on amorphous Ga2O3Solar blind ultraviolet detector of film and preparation method thereof |
| CN114914312A (en) * | 2022-06-07 | 2022-08-16 | 中国人民解放军国防科技大学 | Solar blind ultraviolet detector and preparation method thereof |
| CN114975682A (en) * | 2022-05-10 | 2022-08-30 | 浙江理工大学 | Based on Ga 2 O 3 Manufacturing method of corona monitoring system of solar blind chip |
| CN117253936A (en) * | 2023-11-20 | 2023-12-19 | 南京大学 | Gallium oxide-based surface acoustic wave and solar blind ultraviolet bimodal detector and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655434A (en) * | 2016-03-13 | 2016-06-08 | 金旺康 | Ultraviolet detector based on gallium oxide nanowire array and preparation method thereof |
| CN105789377A (en) * | 2016-03-13 | 2016-07-20 | 浙江理工大学 | Novel flame detector based on gallium oxide film and preparation method thereof |
| CN106409963A (en) * | 2016-09-21 | 2017-02-15 | 浙江理工大学 | Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof |
-
2018
- 2018-05-24 CN CN201810510314.4A patent/CN108666395A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655434A (en) * | 2016-03-13 | 2016-06-08 | 金旺康 | Ultraviolet detector based on gallium oxide nanowire array and preparation method thereof |
| CN105789377A (en) * | 2016-03-13 | 2016-07-20 | 浙江理工大学 | Novel flame detector based on gallium oxide film and preparation method thereof |
| CN106409963A (en) * | 2016-09-21 | 2017-02-15 | 浙江理工大学 | Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| CUI, SJ等: "Room-Temperature Fabricated Amorphous Ga2O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates", 《ADVANCED OPTICAL MATERIALS》 * |
| 刘浩 等: "氧化镓薄膜的制备及其日盲紫外探测性能研究", 《发光学报》 * |
| 戴达煌 等: "《功能薄膜及其沉积制备技术》", 31 January 2013, 冶金工业出版社 * |
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111697090B (en) * | 2019-03-14 | 2022-04-26 | 中国科学院物理研究所 | Amorphous Ga2O3Photoelectric detector, manufacturing method thereof and performance improving method |
| CN111697090A (en) * | 2019-03-14 | 2020-09-22 | 中国科学院物理研究所 | Amorphous Ga2O3Photoelectric detector, manufacturing method thereof and performance improving method |
| CN110061089A (en) * | 2019-03-18 | 2019-07-26 | 北京镓族科技有限公司 | The method that sapphire miscut substrate optimizes the growth of gallium oxide film and solar blind ultraviolet detector performance |
| CN110061089B (en) * | 2019-03-18 | 2022-06-07 | 北京铭镓半导体有限公司 | Method for optimizing gallium oxide film growth and solar blind ultraviolet detector performance by sapphire beveled substrate |
| CN110323291A (en) * | 2019-04-22 | 2019-10-11 | 湖北大学 | Based on (GaY)2O3High-gain solar blind UV detector of noncrystal membrane and preparation method thereof |
| CN110350043B (en) * | 2019-06-20 | 2021-09-07 | 北京邮电大学 | Self-assembled crystallized/amorphous gallium oxide combined photoelectric detector and manufacturing method thereof |
| CN110350043A (en) * | 2019-06-20 | 2019-10-18 | 北京邮电大学 | A kind of self assembly crystallization/amorphous oxide gallium mutually ties photodetector and its manufacturing method |
| CN110444618A (en) * | 2019-08-09 | 2019-11-12 | 南京大学 | Solar blind ultraviolet detector and preparation method thereof based on amorphous oxide gallium film |
| CN110444618B (en) * | 2019-08-09 | 2021-10-22 | 南京大学 | Solar blind ultraviolet detector based on amorphous gallium oxide film and preparation method thereof |
| CN110752267A (en) * | 2019-10-08 | 2020-02-04 | 郑州大学 | Three-dimensional solar blind photoelectric detector based on gallium oxide |
| CN111293181B (en) * | 2020-02-18 | 2021-09-03 | 湖北大学 | MSM type alpha-Ga2O3Basic solar blind ultraviolet detector |
| CN111293181A (en) * | 2020-02-18 | 2020-06-16 | 湖北大学 | MSM type α -Ga2O3Basic solar blind ultraviolet detector |
| CN113823707B (en) * | 2020-06-03 | 2023-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Integrated device based on gallium oxide and gallium nitride and preparation method thereof |
| CN113823707A (en) * | 2020-06-03 | 2021-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Integrated device based on gallium oxide and gallium nitride and preparation method thereof |
| CN114530519B (en) * | 2020-11-23 | 2024-04-02 | 中国科学院宁波材料技术与工程研究所 | Self-driven MSM ultraviolet detector and preparation method thereof |
| CN114530519A (en) * | 2020-11-23 | 2022-05-24 | 中国科学院宁波材料技术与工程研究所 | Self-driven MSM ultraviolet detector and preparation method thereof |
| CN112420876A (en) * | 2020-12-03 | 2021-02-26 | 哈尔滨工业大学 | Preparation method of broadband detector from solar blind ultraviolet to near infrared |
| CN112563353A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Heterojunction ultraviolet detector and preparation method thereof |
| CN113659020B (en) * | 2021-02-26 | 2023-06-02 | 松山湖材料实验室 | Solar blind ultraviolet detector, preparation method thereof and solar blind ultraviolet detection method |
| CN113659020A (en) * | 2021-02-26 | 2021-11-16 | 松山湖材料实验室 | Solar blind ultraviolet detector, preparation method thereof and solar blind ultraviolet detection method |
| CN113517366A (en) * | 2021-05-20 | 2021-10-19 | 西安电子科技大学 | Novel heterojunction photoelectric detector and preparation method thereof |
| CN113380906A (en) * | 2021-05-26 | 2021-09-10 | 浙江大学 | Transparent ultraviolet photoelectric detector based on metal-semiconductor-metal structure |
| CN113451447A (en) * | 2021-06-30 | 2021-09-28 | 南方科技大学 | Deep ultraviolet amorphous gallium oxide photoelectric detector and preparation method and application thereof |
| CN113707760A (en) * | 2021-07-20 | 2021-11-26 | 青岛滨海学院 | Based on beta-Ga2O3Three-port ultraviolet light detector of/MgO heterojunction and manufacturing method thereof |
| CN114725234A (en) * | 2022-03-23 | 2022-07-08 | 电子科技大学 | Based on amorphous Ga2O3Solar blind ultraviolet detector of film and preparation method thereof |
| CN114725234B (en) * | 2022-03-23 | 2024-03-22 | 电子科技大学 | Based on amorphous Ga 2 O 3 Solar blind ultraviolet detector of film and preparation method thereof |
| CN114975682A (en) * | 2022-05-10 | 2022-08-30 | 浙江理工大学 | Based on Ga 2 O 3 Manufacturing method of corona monitoring system of solar blind chip |
| CN114914312A (en) * | 2022-06-07 | 2022-08-16 | 中国人民解放军国防科技大学 | Solar blind ultraviolet detector and preparation method thereof |
| CN114914312B (en) * | 2022-06-07 | 2024-04-26 | 中国人民解放军国防科技大学 | Solar blind ultraviolet detector and preparation method thereof |
| CN117253936A (en) * | 2023-11-20 | 2023-12-19 | 南京大学 | Gallium oxide-based surface acoustic wave and solar blind ultraviolet bimodal detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108666395A (en) | Solar blind UV electric explorer and preparation method thereof based on amorphous oxide gallium film | |
| CN109461790A (en) | Gallium oxide/graphene hetero-junctions zero-power photodetector and its manufacturing method | |
| CN108963027B (en) | Amorphous Ga2O3Solar blind ultraviolet detector and preparation method and application thereof | |
| CN101807619B (en) | Transparent flexible ultraviolet detector and preparation method thereof | |
| CN107507876A (en) | A kind of β Ga2O3Base solar blind UV electric explorer array and preparation method thereof | |
| CN109065661A (en) | Gallium oxide film photoelectric detector and its manufacturing method based on magnesium aluminate substrate | |
| CN110061089B (en) | Method for optimizing gallium oxide film growth and solar blind ultraviolet detector performance by sapphire beveled substrate | |
| CN103943720A (en) | Self-driven oxygen zinc magnesium ultraviolet detector and preparing method thereof | |
| CN102709395B (en) | Preparation method of CdZnTe thin-film ultraviolet light detector | |
| CN111293181B (en) | MSM type alpha-Ga2O3Basic solar blind ultraviolet detector | |
| CN109037386A (en) | Gallium oxide film photoelectric detector and its manufacturing method based on magnesia substrate | |
| CN103227230B (en) | A kind of lateral growth ZnMgO nanowire solar-blind region ultraviolet detector and preparation method thereof | |
| Lu et al. | Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition | |
| CN109256438A (en) | A kind of silicon substrate amorphous oxide gallium film solar blind light electric transistor and its manufacturing method | |
| CN103500776A (en) | Preparation method of silica-based CdZnTe film ultraviolet light detector | |
| CN101425553A (en) | Manufacturing method for MgZnO based photoconduction type ultraviolet detector | |
| CN107845700B (en) | A kind of preparation method of highly sensitive ZnO/AlN core sheath nanometer stick array ultraviolet light detector | |
| CN113707760A (en) | Based on beta-Ga2O3Three-port ultraviolet light detector of/MgO heterojunction and manufacturing method thereof | |
| CN201060051Y (en) | Ultraviolet light conductance seeker of ZnO MSM structure | |
| CN111900229A (en) | Based on beta-Ga2O3Flexible solar blind area deep ultraviolet photoelectric detector of film and preparation method and application thereof | |
| CN110350043B (en) | Self-assembled crystallized/amorphous gallium oxide combined photoelectric detector and manufacturing method thereof | |
| CN109755341A (en) | Based on β-Ga2O3The solar blind UV electric explorer of/FTO hetero-junctions and its preparation | |
| CN113113499A (en) | PN junction type gallium oxide based self-powered ultraviolet detector and preparation method thereof | |
| Wang et al. | Temperature-Dependent Study of β-Ga2O3 Solar-Blind Photodetectors | |
| CN109449239A (en) | Gallic acid lanthanum film and its manufacturing method and corresponding lanthanum gallate film photoelectric detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181016 |
|
| RJ01 | Rejection of invention patent application after publication |