CN113823707B - Integrated device based on gallium oxide and gallium nitride and preparation method thereof - Google Patents

Integrated device based on gallium oxide and gallium nitride and preparation method thereof Download PDF

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CN113823707B
CN113823707B CN202010492327.0A CN202010492327A CN113823707B CN 113823707 B CN113823707 B CN 113823707B CN 202010492327 A CN202010492327 A CN 202010492327A CN 113823707 B CN113823707 B CN 113823707B
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gallium oxide
electrode
oxide film
layer
gallium
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CN113823707A (en
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张晓东
马永健
何涛
张宝顺
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Guangdong Zhongke Semiconductor Micro Nano Manufacturing Technology Research Institute
Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Guangdong Zhongke Semiconductor Micro Nano Manufacturing Technology Research Institute
Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention discloses an integrated device based on gallium oxide and gallium nitride and a preparation method thereof. The integrated device comprises a barrier layer, a first buffer layer and a solar blind ultraviolet functional layer which are sequentially stacked on a channel layer; a local area on the surface of the barrier layer is exposed from the first buffer layer and the solar blind ultraviolet functional layer; a first electrode, a second electrode and a third electrode are arranged on a local area of the surface of the barrier layer so as to form a power electronic device unit in a matching way; and a fourth electrode and a fifth electrode are arranged on the solar blind ultraviolet functional layer so as to form a solar blind ultraviolet electronic device unit in a matching way. The integrated device provided by the invention can realize the integration of the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device chip, can realize the single function of the two devices, can integrate the advantages of the two devices, and is suitable for certain specific fields.

Description

Integrated device based on gallium oxide and gallium nitride and preparation method thereof
Technical Field
The invention particularly relates to an integrated device based on gallium oxide and gallium nitride and a preparation method thereof, belonging to the technical field of semiconductors.
Background
Gallium oxide (Ga) 2 O 3 ) As an ultra-wide band gap semiconductor material, the material is a direct band gap (4.6-5.3 eV), the melting point is as high as 1725 ℃, and the excellent electrical property and luminous performance of the material have been the focus of attention for a long time. The high-performance high-power-efficiency high-voltage light source can be used for manufacturing high-performance power electronic devices, gas sensors, solar blind detectors, ultraviolet light electric devices, semiconductor lasers and the like by utilizing the excellent electrical properties, optical properties and stable physicochemical properties, and has a wide application prospect.
The solar blind ultraviolet detection technology is widely focused on due to the advantages of strong anti-interference capability and high sensitivity. The solar blind ultraviolet detector based on the wide forbidden band semiconductor gradually replaces the vacuum photoelectric tube due to the advantages of small volume, long service life, low power consumption and the like, and becomes the current main stream research direction. Ga 2 O 3 The light response peak value just falls in the solar blind wave band, energy band regulation is not needed, and the absorption coefficient near the absorption edge is as high as 10 5 cm -1 Is a very ideal natural solar blind ultraviolet detection material.
Furthermore, ga with direct band gap 2 O 3 The material is also an ideal material for preparing ultraviolet light emitting devices (such as LEDs and semiconductor lasers), and the corresponding ultraviolet spectrum has wide market prospect in the fields of ultraviolet identity verification, sterilization, medical treatment, liquid detection, analysis and the like in the range of UV-C short wave ultraviolet band (200-280 nm), and Ga 2 O 3 The material is used for the optical communication of the solar blind ultraviolet band, is not influenced by external environment, greatly improves the anti-interference performance, and is one of the best candidate materials of the optical communication key components; ga 2 O 3 The material has stable performance, excellent thermal stability and chemical stability, and is suitable for severe environments such as high temperature and the likeIs used.
Ga 2 O 3 The material has excellent optical characteristics, chemical stability and higher mechanical strength, can well meet the requirements of solar blind ultraviolet electronic devices without adjusting the forbidden band width through doping, can be prepared into different forms such as high-quality single crystals, epitaxial films, nanowires and the like through different technological means, and is a very potential solar blind ultraviolet electronic semiconductor material.
Gallium nitride (GaN) materials are widely applied to photoelectric devices (LEDs) by virtue of excellent characteristics, and power electronic devices based on AlGaN/GaN heterojunction have the characteristics of high frequency, high voltage, high temperature resistance, high power density, strong radiation resistance and the like. In particular, the high frequency characteristic of the AlGN/GaN HEMT power electronic device is remarkable, the switching frequency of the AlGN/GaN HEMT power electronic device exceeds the limit of a silicon (Si) material power electronic device, and the AlGN/GaN HEMT power electronic device can reach MHz-GHz, and is an ideal switch control device for an optical communication module.
The wide band gap semiconductor material commonly used for ultraviolet electronic device research mainly comprises diamond, alGaN, mgZnO and Ga 2 O 3 Etc. The diamond material has an ultra-wide band gap of 5.5eV, the corresponding wavelength is less than 225nm, the detection efficiency of the ultra-wide band gap for solar blind ultraviolet light is not high, the cost of the diamond is too high, and the manual preparation difficulty is extremely high; alGaN and MgZnO are ternary alloy materials, the detection or the luminescence of a required ultraviolet band is realized by changing the proportion of two metal elements in the material, however, a high-performance solar blind ultraviolet detector needs an AlGaN (MgZnO) material with a high Al (Mg) component, so that the alloy material realized by energy band engineering has a certain problem; for example, the difficulty coefficient of epitaxial growth of AlGaN materials with high Al components is larger, and the quality of a film is seriously degraded along with the increase of the Al components, so that the performance of a device is greatly affected, for MgZnO materials, because ZnO (wurtzite phase) and MgO (cubic phase) have great difference in structure, when the components of Mg are too high, mgZnO alloy is extremely easy to generate phase separation, and high-quality MgZnO is extremely difficult to obtain. In addition, the growth of AlGaN and MgZnO requires a high-temperature and complex epitaxial process, and the preparation of the film is increasedThe method also limits the large-area growth of the film. Current Ga 2 O 3 Optoelectronic devices and GaN power electronics can only perform a single function.
Disclosure of Invention
The invention mainly aims to provide an integrated device based on gallium oxide and gallium nitride and a preparation method thereof, so as to overcome the defects in the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an integrated device based on gallium oxide and gallium nitride, which comprises a barrier layer and a solar blind ultraviolet functional layer which are sequentially overlapped on a channel layer; a local area of the surface of the barrier layer is exposed from the solar blind ultraviolet functional layer; a first electrode, a second electrode and a third electrode are arranged on a local area of the surface of the barrier layer so as to form a power electronic device unit in a matching way; and a fourth electrode and a fifth electrode are arranged on the solar blind ultraviolet functional layer so as to form a solar blind ultraviolet electronic device unit in a matching way.
Further, the material of the channel layer includes GaN, but is not limited thereto.
Further, the thickness of the channel layer is 1nm-1 μm.
Further, the material of the barrier layer includes AlGaN, but is not limited thereto.
Preferably, the concentration of the Al component in the barrier layer is 10 to 50%.
Further, the thickness of the barrier layer is 1-100nm.
Further, a space layer is arranged between the channel layer and the barrier layer.
Preferably, the material of the space layer includes AlN, but is not limited thereto.
Preferably, the thickness of the space layer is 1-100nm.
Further, the solar blind ultraviolet functional layer comprises a first gallium oxide film and a second gallium oxide film, the second gallium oxide film is laminated on the first gallium oxide film, a local area on the surface of the first gallium oxide film is exposed from the second gallium oxide film, the fourth electrode is arranged on the local area on the surface of the first gallium oxide film, and the fifth electrode is arranged on the second gallium oxide film, or the solar blind ultraviolet functional layer comprises a first gallium oxide film or a second gallium oxide film, and the fourth electrode and the fifth electrode are both arranged on the first gallium oxide film or the second gallium oxide film.
Further, the material of the first gallium oxide film comprises N-Ga 2 O 3 The second gallium oxide film comprises P-Ga 2 O 3 。
Further, the electron concentration of the first gallium oxide film is 1×10 16 -10 21 The second gallium oxide film has a hole concentration of 1×10 16 -10 21 。
Further, the thickness of the first gallium oxide film is 1nm-1mm, and the thickness of the second gallium oxide film is 1nm-1mm.
Further, a first buffer layer is arranged between the solar blind ultraviolet functional layer and the barrier layer.
Further, the first buffer layer is a gradual change buffer layer, and the material of the first buffer layer comprises GaNO.
Further, the thickness of the first buffer layer is 0-2 μm.
Further, the concentration of the N component in the first buffer layer is 0-100%, and the sum of the N and O contents is 100%.
In some more specific embodiments, the channel layer is disposed on a second buffer layer disposed on the substrate.
Preferably, the second buffer layer is a high-resistance buffer layer, and the material of the second buffer layer includes AlGaN or AlN/GaN superlattice, but is not limited thereto.
Preferably, the thickness of the second buffer layer is 1 μm to 1mm.
Preferably, the material of the substrate includes any one of Si, siC, gaN and sapphire, but is not limited thereto.
Preferably, the thickness of the substrate is 10 μm to 10mm.
The embodiment of the invention also provides a preparation method of the integrated device based on gallium oxide and gallium nitride, which comprises the following steps:
sequentially forming a channel layer and a barrier layer on a substrate, wherein the surface of the barrier layer is provided with a first area and a second area different from the first area;
a solar blind ultraviolet functional layer is formed on the second area of the surface of the barrier layer,
forming a first electrode, a second electrode and a third electrode on a first region of the surface of the barrier layer to construct a power electronic device unit, an
And manufacturing a fourth electrode and a fifth electrode on the solar blind ultraviolet functional layer to construct a solar blind ultraviolet electronic device unit.
Further, the preparation method specifically comprises the following steps:
forming a first gallium oxide film on a second region of the surface of the barrier layer, wherein the surface of the first gallium oxide film is provided with a third region and a fourth region different from the third region;
forming a second gallium oxide film in a third area on the surface of the first gallium oxide film to form the solar blind ultraviolet functional layer;
manufacturing a fourth electrode in a fourth area on the surface of the first gallium oxide film, and manufacturing a fifth electrode on the second gallium oxide film to construct a solar blind ultraviolet electronic device unit;
alternatively, the preparation method comprises the following steps: forming a first gallium oxide film or a second gallium oxide film in a second area on the surface of the barrier layer to form the solar blind ultraviolet functional layer;
and manufacturing a fourth electrode and a fifth electrode on the first gallium oxide film or the second gallium oxide film to construct a solar blind ultraviolet light electronic device unit.
Further, the material of the first gallium oxide film comprises N-Ga 2 O 3 The second gallium oxide film comprises P-Ga 2 O 3 。
Further, the preparation method further comprises the following steps: and forming a first buffer layer between the barrier layer and the solar blind ultraviolet functional layer.
Further, the preparation method further comprises the following steps: a spatial layer is formed between the channel layer and the barrier layer.
Further, the channel layer is formed on a second buffer layer formed on the substrate.
The embodiment of the invention also provides a preparation method of the integrated device based on gallium oxide and gallium nitride, which comprises the following steps:
sequentially forming a channel layer, a barrier layer and a solar blind ultraviolet functional layer on a substrate;
removing the local solar blind ultraviolet functional layer to expose the local area on the surface of the barrier layer;
fabricating a first electrode, a second electrode and a third electrode on the exposed local area of the barrier layer surface to construct a power electronic device unit, an
And manufacturing a fourth electrode and a fifth electrode on the solar blind ultraviolet functional layer to construct a solar blind ultraviolet electronic device unit.
Further, the preparation method specifically comprises the following steps:
sequentially forming a first gallium oxide film and a second gallium oxide film which are overlapped on the barrier layer to form the solar blind ultraviolet functional layer;
removing a local second gallium oxide film to expose a local area on the surface of the first gallium oxide film;
manufacturing a fourth electrode on a local area of the exposed surface of the first gallium oxide film, and manufacturing a fifth electrode on the second gallium oxide film to construct a solar blind ultraviolet light electronic device unit;
alternatively, the preparation method comprises the following steps:
forming a first gallium oxide film or a second gallium oxide film on the barrier layer to form the solar blind ultraviolet functional layer;
and manufacturing a fourth electrode and a fifth electrode on the first gallium oxide film or the second gallium oxide film to construct a solar blind ultraviolet light electronic device unit.
Further, the preparation method comprises the following steps: and removing the local solar blind ultraviolet functional layer at least by adopting a dry etching or wet etching mode.
Further, the preparation method comprises the following steps: and removing partial second gallium oxide film by adopting at least a dry etching or wet etching mode.
Further, the preparation method further comprises the following steps: and forming a first buffer layer between the barrier layer and the solar blind ultraviolet functional layer.
Further, the preparation method further comprises the following steps: a spatial layer is formed between the channel layer and the barrier layer.
Further, the channel layer is formed on a second buffer layer formed on the substrate.
Compared with the prior art, the invention has the advantages that:
1) According to the integrated device based on gallium oxide and gallium nitride, provided by the typical embodiment of the invention, the single-chip integration of the gallium oxide solar blind ultraviolet light electronic device and the gallium nitride power electronic device can be realized, the single functions of the two devices can be realized by the integrated device after the single-chip integration, the two devices are mutually fused, the respective application range is expanded, and the new functions are derived;
2) The integrated device based on gallium oxide and gallium nitride provided in an exemplary embodiment of the invention can be suitable for special environments or suitable for Ga 2 O 3 Solar blind ultraviolet light electronic device and GaN power electronic device are not applicable to certain scenes, ga 2 O 3 The solar blind ultraviolet light electronic device controls the GaN power electronic device to work, and the GaN power electronic device can be expanded to the ultraviolet light electronic field;
3) In an integrated device based on gallium oxide and gallium nitride according to an exemplary embodiment of the present invention, ga may be controlled by a GaN power electronic device 2 O 3 Solar blind ultraviolet electronic device, thereby utilizing high frequency characteristic of GaN power electronic device to make Ga 2 O 3 The solar blind ultraviolet electronic device is expanded to the application of a high-frequency system;
4) In an integrated device based on gallium oxide and gallium nitride provided in an exemplary embodiment of the present invention, the solar blind ultraviolet light electronic device is selected from epitaxially grown Ga 2 O 3 Films (e.g. beta-Ga 2 O 3 ) Ga relative to bulk and nanostructure 2 O 3 The film-type material has a plurality of preparation methods and mature process, and solves the problem of the dimension of the sample.
Drawings
FIG. 1 is a schematic diagram of an integrated device material structure formed in an exemplary embodiment of the present invention;
FIG. 2 is a schematic diagram of a chip unit after cell isolation in an exemplary embodiment of the invention;
FIG. 3 is a schematic diagram of a chip unit after etching in an exemplary embodiment of the invention;
FIG. 4a is a schematic diagram of an integrated gallium oxide and gallium nitride based device according to an exemplary embodiment of the invention;
FIG. 4b is a schematic diagram of another integrated gallium oxide and gallium nitride based device according to an exemplary embodiment of the invention;
fig. 5a and 5b are schematic views of a fifth electrode according to an exemplary embodiment of the invention.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical scheme, the implementation process, the principle and the like are further explained as follows.
The embodiment of the invention provides an integrated device based on gallium oxide and gallium nitride, which comprises a barrier layer and a solar blind ultraviolet functional layer which are sequentially overlapped on a channel layer; a local area of the surface of the barrier layer is exposed from the solar blind ultraviolet functional layer; a first electrode, a second electrode and a third electrode are arranged on a local area of the surface of the barrier layer so as to form a power electronic device unit in a matching way; and a fourth electrode and a fifth electrode are arranged on the solar blind ultraviolet functional layer so as to form a solar blind ultraviolet electronic device unit in a matching way.
The embodiment of the invention also provides a preparation method of the integrated device based on gallium oxide and gallium nitride, which comprises the following steps:
sequentially forming a channel layer and a barrier layer on a substrate, wherein the surface of the barrier layer is provided with a first area and a second area different from the first area;
a solar blind ultraviolet functional layer is formed on the second area of the surface of the barrier layer,
forming a first electrode, a second electrode and a third electrode on a first region of the surface of the barrier layer to construct a power electronic device unit, an
And manufacturing a fourth electrode and a fifth electrode on the solar blind ultraviolet functional layer to construct a solar blind ultraviolet electronic device unit.
The embodiment of the invention also provides a preparation method of the integrated device based on gallium oxide and gallium nitride, which comprises the following steps:
sequentially forming a channel layer, a barrier layer and a solar blind ultraviolet functional layer on a substrate;
removing the local solar blind ultraviolet functional layer to expose the local area on the surface of the barrier layer;
fabricating a first electrode, a second electrode and a third electrode on the exposed local area of the barrier layer surface to construct a power electronic device unit, an
And manufacturing a fourth electrode and a fifth electrode on the solar blind ultraviolet functional layer to construct a solar blind ultraviolet electronic device unit.
Specifically, the solar blind ultraviolet light electronic device can be a solar blind ultraviolet light photoelectric detection device and a solar blind ultraviolet light emitting device, and the solar blind ultraviolet light photoelectric light emitting device can be an LED and a laser.
Specifically, one of the first electrode and the third electrode is a source electrode, the other is a drain electrode, the second electrode is a gate electrode, and different voltages are respectively applied to the first electrode, the second electrode and the third electrode so as to enable the power electronic device to work; applying different voltages to the fourth electrode and the fifth electrode so as to enable the solar blind ultraviolet electronic device to work; and when the solar-blind ultraviolet light electronic device works, the third electrode and the fourth electrode can be electrically connected (namely, electrically conducted) by adopting the existing semiconductor technology to form metal interconnection, and at the moment, the first electrode, the second electrode, the third electrode, the fourth electrode and the fifth electrode work simultaneously, so that the power electronic device and the solar-blind ultraviolet light electronic device work, and the power electronic device and the solar-blind ultraviolet light electronic device can be mutually controlled, so that the aim of jointly working the integrated device is fulfilled.
Specifically, the gallium nitride power electronic device is a three-terminal device, and different voltages need to be applied to the first electrode, the second electrode and the third electrode when the gallium nitride power electronic device works; the gallium oxide solar blind ultraviolet electronic device is a device at two ends, and different voltages need to be applied to the fourth electrode and the fifth electrode when the gallium oxide solar blind ultraviolet electronic device works; after the gallium nitride power electronic device and the gallium oxide solar blind ultraviolet electronic device are integrated and then work simultaneously, a third electrode and a fourth electrode can be connected in series so that the two devices mutually control each other.
The embodiment of the invention combines the excellent characteristics of the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device, organically fuses the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device in a single-chip integration mode, not only can realize complementary advantages, but also can provide an effective path for developing a novel device and expand the application field of the novel device, so the invention provides the single-chip integration of the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device, and is suitable for special environments.
The integrated device provided by the invention can realize the integration of the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device chip, can realize the single function of the two devices, can integrate the advantages of the two devices, and is suitable for certain specific fields.
The technical scheme of the invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the materials and equipment used in the examples below may be obtained by commercial means, and the like, and that the processes such as MOCVD used therein may be carried out in accordance with the methods known in the art, unless otherwise specified.
In an exemplary embodiment of the present invention, an integrated device based on gallium oxide and gallium nitride may be prepared by a method including the following steps:
1) Adopting MOCVD, MBE, PEVD, LEPCVD, electron beam evaporation station, magnetron sputtering station and other film preparation equipment to sequentially laminate and manufacture high-resistance buffer layer, gaN channel layer, alN space layer, alGaN barrier layer, gaNO graded buffer layer, N-Ga on Si, siC, gaN or sapphire substrate 2 O 3 Thin film and P-Ga 2 O 3 The growth temperature of each structural layer of the film is 800-1200 ℃, and the structure of the material formed by the preparation is shown in figure 1.
Specifically, before the GaNO gradual change buffer layer is manufactured, carrying out heat treatment on the surface of the AlGaN barrier layer at 600-1200 ℃, and then introducing an oxygen source to form the GaNO gradual change buffer layer, wherein the oxygen source has an introducing flow of 1sccm-10slm for 1 second-10 minutes, and the oxygen source can be oxygen and/or laughing gas and the like;
alternatively, a gallium source, an oxygen source and a nitrogen source may be simultaneously introduced, or the gallium source, the nitrogen source and the oxygen source may be introduced first, and then the three may be alternately introduced at intervals, or the gallium source, the oxygen source and the nitrogen source may be introduced first, and then the gallium source and the nitrogen source may be introduced simultaneously, so as to form the GaNO graded buffer layer, where the gallium source includes TMGa (trimethylgallium), TEGa (triethylgallium), and the like; the nitrogen source comprises ammonia gas, nitrogen gas and the like, the oxygen source comprises oxygen gas, laughing gas and the like, the inlet flow rate of the gallium source, the oxygen source and the nitrogen source is 1sccm-10slm, and the time is 1 second-10 minutes.
Specifically, when the GaNO graded buffer layer is formed, siH can be introduced 4 A doping source to make the formed GaNO gradual change buffer layer to be N-type by controlling SiH 4 To adjust the N-type doping concentration of the GaNO graded buffer layer (N-type carrier concentration is understood to be 1×10) 16 -10 21 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the carrier concentration change of the GaNO graded buffer layer corresponds to the thickness change thereof, and the carrier concentration change and the thickness change are linearly changed, namely the bottommost layer of the GaNO graded buffer layer (namely byThe region near the AlGaN barrier layer, the same applies below) has the smallest N-type doping concentration and the topmost N-type doping concentration is the largest.
Specifically, the percentage content of the N component and the O component in the GaNO gradual change buffer layer also corresponds to the corresponding thickness of the GaNO gradual change buffer layer, and the percentage content of the N component and the O component in the GaNO gradual change buffer layer linearly changes, namely the concentration of the N component in the bottommost layer and the concentration of the O component in the topmost layer of the GaNO gradual change buffer layer are the largest, wherein the change of the N component and the O component can be controlled by controlling the flow of a nitrogen source and an oxygen source which are introduced in the growth process of the GaNO gradual change buffer layer, and the flow of the nitrogen source and the oxygen source which are introduced is 1sccm-10slm.
2) Forming isolation regions on the material structure formed in step 1) to separate the material structure shown in FIG. 1 into a plurality of chip units, each chip unit comprising Ga 2 O 3 The solar blind ultraviolet light electronic device unit and the GaN power electronic device unit are used for arraying the integrated devices, and the structure of the isolated chip unit is shown in figure 2.
3) Removing the GaNO gradual change buffer layer and N-Ga which are positioned in the partial area above the AlGaN barrier layer by dry etching or wet etching 2 O 3 Thin film and P-Ga 2 O 3 Film, removal of N-Ga 2 O 3 P-Ga in local area above film 2 O 3 A thin film for exposing the AlGaN barrier layer surface from the local region, N-Ga 2 O 3 The thin film is exposed from the local area, and the etched chip unit structure is shown in fig. 3.
4) Manufacturing a first electrode, a second electrode and a third electrode on the exposed surface of the AlGaN barrier layer to construct a power electronic device unit; at the exposed N-Ga 2 O 3 A fourth electrode is manufactured on the surface of the film and is arranged on the P-Ga 2 O 3 And a fifth electrode is manufactured on the film to construct a solar blind ultraviolet electronic device unit, so that the integrated device based on gallium oxide and gallium nitride is formed, and the structure of the integrated device is shown in figure 4 a.
Alternatively, all of the P-Ga may be removed 2 O 3 Thin film, but only retain N-Ga 2 O 3 Thin film and to N-Ga 2 O 3 Of thin filmsThe surface is processed to form a step structure, and the step structure is formed by N-Ga 2 O 3 A fourth electrode and a fifth electrode are manufactured on the step structure on the surface of the film to construct a solar blind ultraviolet electronic device unit, and then the integrated device based on gallium oxide and gallium nitride is formed, the structure of which is shown in figure 4b, wherein the fourth electrode and the fifth electrode are respectively formed on N-Ga 2 O 3 Different areas of the step structure on the surface of the film are formed, so that an upper electrode and a lower electrode are formed.
Specifically, one of the first electrode and the third electrode is a source electrode, the other is a drain electrode, the second electrode is a grid electrode, ohmic contact is formed between the first electrode and the third electrode, the first electrode and the third electrode are both Ti/Al/Ni/Au (namely, a Ti layer, an Al layer, a Ni layer and an Au layer which are arranged in a lamination manner), the thickness is 1nm-1000nm, the second electrode is a Schottky integrated electrode, and the second electrode is Ni/Au (namely, a Ni layer and an Au layer which are arranged in a lamination manner), and the thickness is 1nm-1000nm; the fourth electrode and the fifth electrode are all in ohmic contact, the fourth electrode is Ti/Au (namely a Ti layer and an Au layer which are arranged in a laminated way), the fifth electrode is Pt/Au (namely a Pt layer and an Au layer which are arranged in a laminated way), or the fourth electrode and the fifth electrode are other similar laminated metals, and the thicknesses of the fourth electrode and the fifth electrode are 1nm-1000nm.
Of course, when the fifth electrode is disposed on the P-Ga 2 O 3 When the film is arranged on the electrode, the fifth electrode can also be a transparent conductive film, and the transparent conductive film does not influence the incidence of solar blind ultraviolet light to the P-Ga 2 O 3 A film, wherein the thickness of the transparent conductive film is 1nm-1000nm; specifically, the material and metal type of the fourth electrode may be the same as those of the fifth electrode, or may be a transparent conductive film, which does not affect incidence of solar blind ultraviolet light on the N-Ga 2 O 3 A thin film having a thickness of 1-1000nm; wherein the fifth electrode can be in the shape of net, square, round or other similar shapes, and the shapes of the fifth electrode and the fifth electrode are mutually common, wherein the structure of the fifth electrode can be as shown in fig. 5 and 5b, the electrode can not lead the electrode to cover the whole surface of the material by using current expansion no matter a light emitting or detecting device, the larger the surface area of the exposed material is, the more the effective area of light emitting or detecting is, and the more the effective area of light emitting or detecting isThe current expansion of the full coverage of the electrode is optimal, and the adoption of the transparent conductive film is an effective measure for realizing the full coverage of the electrode.
It should be noted that, the integrated device based on gallium oxide and gallium nitride provided in the embodiment of the present invention may use only P-Ga 2 O 3 Thin film or N-Ga 2 O 3 The film is used as a solar blind ultraviolet functional layer; when only P-Ga is used 2 O 3 Thin film electrode or N-Ga 2 O 3 When the film is used as a solar blind ultraviolet functional layer, the obtained gallium oxide device is a solar blind ultraviolet photoelectric detector; when P-Ga is used simultaneously 2 O 3 Thin film and N-Ga 2 O 3 When the film is used as a solar blind ultraviolet functional layer, P-Ga 2 O 3 Can be combined with N-Ga 2 O 3 The gallium oxide solar blind ultraviolet light electronic device can be used as a light emitting device and a photoelectric detection device.
According to the gallium oxide and gallium nitride-based integrated device provided by the typical embodiment of the invention, aiming at the requirements of multiple functional sets of a gallium oxide solar blind ultraviolet electronic device and a gallium nitride power electronic device, the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device are integrated into a whole in a monolithic integration mode, so that the single functions of the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device can be realized, and the application range of the gallium oxide and the gallium nitride device can be expanded.
Specifically, when only the first electrode, the second electrode and the third electrode are used, the device is an AlGaN/GaN HEMT device and has the characteristics of high frequency, high voltage and high power density; when only the fourth electrode and the fifth electrode are used, the device is Ga 2 O 3 Solar-blind ultraviolet light electronics, such as solar-blind ultraviolet light emitting diodes, lasers, or photodetectors.
Specifically, when the first electrode and the third electrode on the barrier layer are in contact with external voltage, the function of the gallium nitride power electronic device can be realized, and when N-Ga 2 O 3 Thin film and P-Ga 2 O 3 The fourth electrode and the fifth electrode on the film are connected with external voltageWhen touching, the gallium oxide solar blind ultraviolet electronic device can be realized; and in the preparation of the device, the third electrode and the fourth electrode can be communicated by adopting a traditional semiconductor process to form metal interconnection, and at the moment, the first electrode, the second electrode, the third electrode, the fourth electrode and the fifth electrode can work simultaneously, so that the mutual control of the gallium oxide solar blind ultraviolet light electronic device and the gallium nitride power electronic device can be realized, and the aim of the combined work of the integrated devices is further achieved. With the trend of miniaturization, integration, intellectualization, systemization, multifunction, networking and the like of semiconductor technology, the cost and the size of a gallium oxide solar blind ultraviolet light electronic device and a gallium nitride high-frequency power electronic device (single-chip integration) are greatly reduced while various functional requirements are realized.
It should be understood that the materials and equipment used in the following examples are available commercially, and the processes and equipment used therein, such as MOCVD, MBE, PEDVD, LEPCVD, electron beam evaporation station, magnetron sputtering station, etc., may be implemented in a manner known in the art, unless otherwise specified.
Example 1
1) Sequentially laminating AlGaN high-resistance buffer layer with thickness of 10 μm, gaN channel layer with thickness of 1nm, alN space layer with thickness of 1nm, alGaN barrier layer with thickness of 1nm, gaNO graded buffer layer with thickness of 100nm, and N-Ga with thickness of 400nm on Si substrate with thickness of 10 μm by MOCVD equipment 2 O 3 Thin film and 200nm P-Ga 2 O 3 A film.
2) Cell isolation of integrated devices: forming an isolation region on the material structure formed in the step 1), wherein the depth of the isolation region reaches the AlGaN high-resistance buffer layer so as to divide the material structure obtained in the step 1) into a plurality of chip units, and each chip unit comprises Ga 2 O 3 A solar blind ultraviolet photoelectric detector unit and an AlGaN/GaN HEMT power electronic device unit.
3) Removing the GaNO gradual change buffer layer and N-Ga which are positioned in the partial area above the AlGaN barrier layer by dry etching or wet etching 2 O 3 Thin film and P-Ga 2 O 3 A thin film for forming the AlGaN barrier layerThe face is exposed from the local area; removal of N-Ga 2 O 3 P-Ga in local area above film 2 O 3 Thin film to enable N-Ga 2 O 3 The film surface is exposed from the localized area.
4) Manufacturing a first electrode, a second electrode and a third electrode on the surface of the exposed AlGaN barrier layer to construct an AlGaN/GaN HEMT power electronic device; in the exposed N-Ga 2 O 3 A fourth electrode is manufactured on the surface of the film and is arranged on the P-Ga 2 O 3 Forming a fifth electrode on the film to construct Ga 2 O 3 Solar blind ultraviolet electronic device, and further forming GaN power electronic device and Ga 2 O 3 The structure of the integrated device of the solar blind ultraviolet electronic device is shown in fig. 4a, wherein the gallium oxide solar blind ultraviolet electronic device can be a solar blind ultraviolet detection device or a solar blind ultraviolet light emitting device.
The working principle of the integrated device based on gallium oxide and gallium nitride in this embodiment includes: the first electrode is grounded or referenced, the second electrode applies bias voltage, so that the grid electrode (the second electrode) controls the channel to conduct electrons, the third electrode is in metal interconnection with the fourth electrode, and the fourth electrode or the fifth electrode applies bias voltage with the bias voltage range of +/-100V; at the moment, if solar blind ultraviolet light irradiates the device area, the GaN HEMT device can be turned on, if the solar blind ultraviolet light does not exist, the device is in a closed state, and the on or off of the GaN HEMT device can be controlled through the solar blind ultraviolet light, so that GaN is expanded to the ultraviolet light electronic field, and the purpose of realizing the application of the photoswitch is achieved.
Example 2
1) Sequentially laminating 1mm AlN/GaN superlattice high-resistance buffer layer, 1 μm GaN channel layer, 100nm AlN space layer, 100nm AlGaN barrier layer, 1 μm GaNO graded buffer layer, 1 μm N-Ga2O on GaN substrate with thickness of 10mm by using electron beam evaporation table equipment 3 Thin film or 1 μm P-Ga 2 O 3 A film.
2) Cell isolation of integrated devices: forming an isolation region on the material structure formed in the step 1), wherein the depth of the isolation region reaches the AlGaN high-resistance buffer layer so as to carry out the steps1) The material structure obtained in (1) is divided into a plurality of chip units, each chip unit comprises Ga 2 O 3 Solar blind ultraviolet light emitting device unit and GaN power electronic device unit.
3) Removing the GaNO gradual change buffer layer and N-Ga which are positioned in the partial area above the AlGaN barrier layer by dry etching or wet etching 2 O 3 Thin film or P-Ga 2 O 3 A thin film for exposing the surface of the AlGaN barrier layer from the local region;
for N-Ga 2 O 3 Thin film or P-Ga 2 O 3 A local area of the surface is thinned to obtain N-Ga 2 O 3 Thin film or P-Ga 2 O 3 The surface of the film forms a step structure.
4) Manufacturing a first electrode, a second electrode and a third electrode on the surface of the exposed AlGaN barrier layer to construct an AlGaN/GaN HEMT power electronic device; N-Ga after thinning 2 O 3 Thin film or P-Ga 2 O 3 A fourth electrode is manufactured in a local area of the surface of the film, and N-Ga which is not thinned 2 O 3 Thin film or P-Ga 2 O 3 Forming a fifth electrode in the region of the film surface to construct Ga 2 O 3 Solar blind ultraviolet electronic device, and further forming GaN power electronic device and Ga 2 O 3 An integrated device of the solar blind ultraviolet electronic device is shown in fig. 4 b; the gallium oxide solar blind ultraviolet electronic device in the embodiment can be a gallium oxide solar blind ultraviolet detection device.
The working principle of the integrated device based on gallium oxide and gallium nitride in this embodiment includes: the first electrode is grounded or referenced, the second electrode is applied or not applied with bias voltage to control the on and off of channel electrons, the third electrode is in metal interconnection with the fourth electrode, and the fifth electrode is applied with bias voltage within +/-100V; the on-off of the GaN HEMT device can be controlled through the second electrode, so that the alignment of the GaN HEMT device and the Ga HEMT device can be realized 2 O 3 Switch control of solar blind ultraviolet electronic device can make Ga due to GaN HEMT with high frequency characteristic 2 O 3 Solar blind ultraviolet electronic device reaches GHz frequencyIs loaded with a signal at this time, and can realize Ga-based switching 2 O 3 Communication of solar blind ultraviolet electronic devices has the characteristic that the conventional devices cannot be compared, namely Ga is controlled through on or off of a GaN HEMT device 2 O 3 Information transmission of solar blind ultraviolet electronic device, thereby Ga 2 O 3 The solar blind ultraviolet electronic device is expanded to the field of high-frequency photoelectrons.
According to the gallium oxide and gallium nitride-based integrated device provided by the exemplary embodiment of the invention, the gallium oxide solar blind ultraviolet electronic device and the gallium nitride power electronic device can be monolithically integrated, the monolithically integrated device not only can realize single functions of the two devices, but also can be mutually fused, so that the respective application range is expanded, and new functions are derived.
The integrated device based on gallium oxide and gallium nitride provided in an exemplary embodiment of the invention can be suitable for special environments or suitable for Ga 2 O 3 Solar blind ultraviolet light electronic device and GaN power electronic device are not applicable to certain scenes, ga 2 O 3 The solar blind ultraviolet light electronic device controls the GaN power electronic device to work, and the GaN power electronic device can be expanded to Ga 2 O 3 The field of solar blind ultraviolet electronic devices.
In an integrated device based on gallium oxide and gallium nitride according to an exemplary embodiment of the present invention, ga may be controlled by a GaN power electronic device 2 O 3 Solar blind ultraviolet electronic device, thereby utilizing high frequency characteristic of GaN power electronic device to make Ga 2 O 3 The solar blind ultraviolet electronic device is expanded to the application of a high-frequency system.
In an integrated device based on gallium oxide and gallium nitride provided in an exemplary embodiment of the present invention, the solar blind ultraviolet light electronic device is selected from epitaxially grown Ga 2 O 3 Films (e.g. beta-Ga 2 O 3 ) Ga relative to bulk and nanostructure 2 O 3 The film-type material has a plurality of preparation methods and mature process, and solves the problem of the dimension of the sample.
An integrated device based on gallium oxide and gallium nitride, ga, is provided in an exemplary embodiment of the invention 2 O 3 The solar blind ultraviolet light electronic device and the GaN power electronic device are integrated into a whole by adopting a monolithic integration method, namely, the device integration is prepared by using the traditional large-scale semiconductor manufacturing process on the same substrate instead of simple encapsulation integration.
According to the integrated device based on gallium oxide and gallium nitride, which is provided by the exemplary embodiment of the invention, the thin film solar blind ultraviolet light electronic device and the GaN power electronic device are compatible in terms of preparation process and material size, and the cost is reduced through a large area, so that the integrated device is suitable for large-scale industrial production.
According to the solar blind ultraviolet electronic device in the integrated device based on gallium oxide and gallium nitride provided by the exemplary embodiment of the invention, a gallium oxide film is adopted as a solar blind ultraviolet functional layer, and compared with bulk and nano-structured gallium oxide, the film-type material has the advantages of numerous preparation methods and mature process, and the dimensional problem of the device is solved; in addition, compared with AlGaN and MgZnO materials, the gallium oxide film has simple epitaxial process, low preparation cost and easy obtainment of high-quality films, and can also grow in a large area.
It should be understood that the above embodiments are merely for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.

Claims (30)

1. The integrated device based on gallium oxide and gallium nitride is characterized by comprising a barrier layer and a solar blind ultraviolet functional layer which are sequentially stacked on a channel layer, wherein the channel layer is made of GaN, and the barrier layer is made of AlGaN;
a local area of the surface of the barrier layer is exposed from the solar blind ultraviolet functional layer; a first electrode, a second electrode and a third electrode are arranged on a local area of the surface of the barrier layer so as to form a power electronic device unit in a matching way; the solar blind ultraviolet functional layer is provided with a fourth electrode and a fifth electrode so as to form a solar blind ultraviolet electronic device unit in a matching way;
the solar blind ultraviolet functional layer comprises a first gallium oxide film and a second gallium oxide film, the second gallium oxide film is laminated on the first gallium oxide film, a local area on the surface of the first gallium oxide film is exposed out of the second gallium oxide film, a fourth electrode is arranged on the local area on the surface of the first gallium oxide film, and a fifth electrode is arranged on the second gallium oxide film, or the solar blind ultraviolet functional layer comprises a first gallium oxide film or a second gallium oxide film, and the fourth electrode and the fifth electrode are both arranged on the first gallium oxide film or the second gallium oxide film.
2. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: the thickness of the channel layer is 1nm-1 μm.
3. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: the concentration of the Al component in the barrier layer is 10-50%.
4. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: the barrier layer has a thickness of 1-100 a nm a.
5. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: a space layer is also arranged between the channel layer and the barrier layer.
6. An integrated gallium oxide and gallium nitride-based device according to claim 5, wherein: the material of the space layer comprises AlN.
7. An integrated gallium oxide and gallium nitride-based device according to claim 5, wherein: the thickness of the space layer is 1-100nm.
8. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: the material of the first gallium oxide film comprises N-Ga 2 O 3 The second gallium oxide film comprises P-Ga 2 O 3 。
9. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: the electron concentration of the first gallium oxide film is 1×10 16 -10 21 The second gallium oxide film has a hole concentration of 1×10 16 -10 21 。
10. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: the thickness of the first gallium oxide film is 1nm-1mm, and the thickness of the second gallium oxide film is 1nm-1mm.
11. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: and a first buffer layer is arranged between the solar blind ultraviolet functional layer and the barrier layer.
12. The gallium oxide and gallium nitride based integrated device of claim 11, wherein: the material of the first buffer layer comprises GaNO.
13. The gallium oxide and gallium nitride based integrated device of claim 11, wherein: the thickness of the first buffer layer is 0-2 mu m.
14. The gallium oxide and gallium nitride based integrated device of claim 11, wherein: the concentration of the N component in the first buffer layer is 0-100%.
15. The gallium oxide and gallium nitride based integrated device of claim 1, wherein: the channel layer is disposed on a second buffer layer disposed on the substrate.
16. The gallium oxide and gallium nitride based integrated device of claim 15, wherein: the second buffer layer is made of AlGaN or AlN/GaN superlattice.
17. The gallium oxide and gallium nitride based integrated device of claim 15, wherein: the thickness of the second buffer layer is 1 mu m-1mm.
18. The gallium oxide and gallium nitride based integrated device of claim 15, wherein: the substrate is made of any one of Si, siC, gaN and sapphire.
19. The gallium oxide and gallium nitride based integrated device of claim 15, wherein: the thickness of the substrate is 10 μm-10mm.
20. A method for manufacturing an integrated gallium oxide and gallium nitride-based device according to any one of claims 1-19, comprising:
sequentially forming a channel layer and a barrier layer on a substrate, wherein the channel layer is made of GaN, the barrier layer is made of AlGaN, and the surface of the barrier layer is provided with a first area and a second area different from the first area;
forming a first gallium oxide film on a second region of the surface of the barrier layer, wherein the surface of the first gallium oxide film is provided with a third region and a fourth region different from the third region;
forming a second gallium oxide film in a third area on the surface of the first gallium oxide film to form a solar blind ultraviolet functional layer;
manufacturing a fourth electrode in a fourth area on the surface of the first gallium oxide film, and manufacturing a fifth electrode on the second gallium oxide film to construct a solar blind ultraviolet electronic device unit;
alternatively, the preparation method comprises the following steps: and forming a first gallium oxide film or a second gallium oxide film in a second area on the surface of the barrier layer to form a solar blind ultraviolet functional layer, and then manufacturing a fourth electrode and a fifth electrode on the first gallium oxide film or the second gallium oxide film to construct a solar blind ultraviolet electronic device unit.
21. The method of manufacturing according to claim 20, wherein: the material of the first gallium oxide film comprises N-Ga 2 O 3 The second gallium oxide film comprises P-Ga 2 O 3 。
22. The method of claim 20, further comprising: and forming a first buffer layer between the barrier layer and the solar blind ultraviolet functional layer.
23. The method of claim 20, further comprising: a spatial layer is formed between the channel layer and the barrier layer.
24. The method of manufacturing according to claim 20, wherein: the channel layer is formed on a second buffer layer formed on the substrate.
25. A method for manufacturing an integrated gallium oxide and gallium nitride-based device according to any one of claims 1-19, comprising:
sequentially forming a channel layer, a barrier layer and a solar blind ultraviolet functional layer on a substrate, wherein the channel layer is made of GaN, and the barrier layer is made of AlGaN;
removing the local solar blind ultraviolet functional layer to expose the local area on the surface of the barrier layer;
fabricating a first electrode, a second electrode and a third electrode on the exposed local area of the barrier layer surface to construct a power electronic device unit, an
Sequentially forming a first gallium oxide film and a second gallium oxide film which are overlapped on the barrier layer to form the solar blind ultraviolet functional layer;
removing a local second gallium oxide film to expose a local area on the surface of the first gallium oxide film;
manufacturing a fourth electrode on a local area of the exposed surface of the first gallium oxide film, and manufacturing a fifth electrode on the second gallium oxide film to construct a solar blind ultraviolet light electronic device unit;
alternatively, the preparation method comprises the following steps:
forming a first gallium oxide film or a second gallium oxide film on the barrier layer to form the solar blind ultraviolet functional layer;
and manufacturing a fourth electrode and a fifth electrode on the first gallium oxide film or the second gallium oxide film to construct a solar blind ultraviolet light electronic device unit.
26. The method of claim 25, wherein the method comprises: and removing the local solar blind ultraviolet functional layer at least by adopting a dry etching or wet etching mode.
27. The method of claim 25, wherein the method comprises: and removing partial second gallium oxide film by adopting at least a dry etching or wet etching mode.
28. The method of claim 25, further comprising: and forming a first buffer layer between the barrier layer and the solar blind ultraviolet functional layer.
29. The method of claim 25, further comprising: a spatial layer is formed between the channel layer and the barrier layer.
30. The method of manufacturing according to claim 25, wherein: the channel layer is formed on a second buffer layer formed on the substrate.
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