CN109449239A - Gallic acid lanthanum film and its manufacturing method and corresponding lanthanum gallate film photoelectric detector - Google Patents
Gallic acid lanthanum film and its manufacturing method and corresponding lanthanum gallate film photoelectric detector Download PDFInfo
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- CN109449239A CN109449239A CN201811121315.6A CN201811121315A CN109449239A CN 109449239 A CN109449239 A CN 109449239A CN 201811121315 A CN201811121315 A CN 201811121315A CN 109449239 A CN109449239 A CN 109449239A
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- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910052746 lanthanum Inorganic materials 0.000 title claims abstract description 48
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229940074391 gallic acid Drugs 0.000 title claims abstract description 30
- 235000004515 gallic acid Nutrition 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 26
- 229910002244 LaAlO3 Inorganic materials 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 4
- 230000004043 responsiveness Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 58
- 229910002331 LaGaO3 Inorganic materials 0.000 description 17
- 238000001514 detection method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000004549 pulsed laser deposition Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- -1 lanthanum aluminate Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 208000017520 skin disease Diseases 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000003743 erythrocyte Anatomy 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The present invention provides a kind of lanthanum gallate film photoelectric detectors, and corresponding perovskite structure gallic acid lanthanum film and its manufacturing method.The detector includes the substrate being sequentially stacked, gallic acid lanthanum film and electrode, and wherein gallic acid lanthanum film is the perovskite structure LaGaO of (00l) orientation3Epitaxial film, substrate LaAlO3Substrate.Process controllability of the invention is strong, easy to operate.Lanthanum gallate film surface produced by the present invention is fine and close, thickness stable uniform, is suitable for large area preparation and reproducible.Photodetector dark current produced by the present invention is minimum, UV, visible light inhibits and manufacturing process higher than high, responsiveness simple.
Description
Technical field
The invention belongs to photodetector technical fields, in particular to a kind of to utilize pulsed laser deposition method in lanthanum aluminate
(LaAlO3) on substrate epitaxial growth (00l) be orientated lanthanum gallate (LaGaO3) film method, and application gallic acid lanthanum film
Photodetector.
Background technique
Compared with infrared and visible photo-detection method, the deep ultraviolet detector based on wide bandgap semiconductor has many
Advantage is mainly shown as: firstly, the light radiation of ultra-violet (UV) band is fewer, especially wherein among environment locating for us
Deep ultraviolet area be located at day-old chick, have no intersection with maximum lamp (visible light, infrared light etc.), this allows for signal
Without filtering in detection process, so that detection difficulty is greatly reduced, and sensitivity with higher and lower False Rate,
More accurate judgement can be made to the ultraviolet radioactive of the generations such as engine, guided missile, plasma；Secondly as ultraviolet spy
Survey belong to will not radiated electromagnetic wave passive detection, have very high concealment, therefore have in military aspect more wide
Application prospect；In addition, ultraviolet detection technology can largely simplied system structure, be not required to freeze, without scanning, weight
Lighter, volume is smaller.
Ultraviolet detector is in numerous areas such as gas composition analysis, fire monitoring, pollution detection, disinfection, mineral detections
It has obtained increasingly being widely applied.In addition, ultraviolet detection method is similarly subjected to very high concern in medicine, field of biology, especially
It is to find that it has extraordinary effect in skin disease diagnostic field in the recent period.When making a definite diagnosis skin disease using ultraviolet
Detection method can perceive the various aspects of lesion, it is equally applicable to canceration detection, bacterium, hemochrome, red blood cell, white blood
The observation of ball, nucleus etc., it is not only very accurate but also time-consuming very short to be detected with such mode.
Semiconductor material with wide forbidden band possesses a series of superior properties in many fields, compared to traditional semiconductor device
Part, the device based on them show more prominent under many operating conditions, and this give them in the military, people
With the bigger application space in field.But due to being limited to technology, especially Material growth and chip processing all the time
Problem existing for aspect, almost the several years goes no further for research.
Perovskite composite oxide is structure and perovskite (CaTiO3) identical major class compound, perovskite knot
Structure can use ABO3It indicates, the ligancy of alkaline earth metal cations is usually 12 and is in location A, is present in by B transition
In the hole for the octahedral structure that metallic element cation and oxonium ion are constituted.In general, the composition of perovskite composite oxide
Relatively easy, point group symmetry is lower, so usually there is unique property.
As a kind of direct band gap wide bandgap semiconductor, perovskite structure LaGaO3Forbidden bandwidth be 4.4eV, it is corresponding
Cutoff wavelength is 281nm, and deep ultraviolet light wavelength is 100-280nm, therefore while being detected with it only has deep ultraviolet light and rings
It answers, so that it, with excellent properties such as high-resolution, low False Rates, is to prepare photodetector, especially ultraviolet photoelectric detection
The ideal material of device.The photoelectric detector performance of based single crystal is fine, but crystal growth is difficult and expensive.Relatively
For, the performance gains of the photoelectric detector based on film quickly, and are easy integrated with other devices.
Therefore, the growth technique method for obtaining the gallic acid lanthanum film of high quality is developed, and obtains and is based on gallic acid lanthanum film
Ultraviolet light photo device, be still industry problem extremely to be solved.
Summary of the invention
In order to solve the above technical problems, the present invention proposes a kind of system of the lanthanum gallate film photoelectric detector of perovskite structure
Preparation Method can be applied to the preparation of solar blind ultraviolet detector.
The LaAlO that the present invention is orientated in (100)3The gallic acid lanthanum film along (00l) oriented epitaxial growth is prepared on substrate
Base Metal-semiconductor-metal MSM structure solar blind ultraviolet detector.The present invention is the MSM structure photodetection of gallic acid lanthanum film base
The preparation of device, especially solar blind ultraviolet detector provides theory and technology and supports.
Lanthanum gallate film photoelectric detector of the invention, including the LaAlO being sequentially stacked3Substrate, LaGaO3Film and electricity
Pole, the gallic acid lanthanum film are the LaGaO of (00l) orientation3Film, the substrate are LaAlO3Substrate.
A kind of specific embodiment according to the present invention, the LaAlO3Substrate is (100) orientation.
A kind of specific embodiment according to the present invention, the electrode include Ti layers and/or layer gold.
A kind of specific embodiment according to the present invention, the gallic acid lanthanum film with a thickness of 50nm to 200nm.
The present invention also proposes a kind of manufacturing method of gallic acid lanthanum film, comprising: in LaAlO3On substrate, using laser arteries and veins
Rush sedimentation growth gallic acid lanthanum film；It is characterized by: the gallic acid lanthanum film is perovskite structure (00l) orientation
LaGaO3Film.
A kind of specific embodiment according to the present invention, the growth parameter(s) of the pulse laser deposition include: that pulse swashs
Light energy is 1J/cm2~5J/cm2。
A kind of specific embodiment according to the present invention, the growth parameter(s) of the pulse laser deposition further include: pulse
Laser frequency is 1Hz~5Hz.
A kind of specific embodiment according to the present invention, the growth parameter(s) of the pulse laser deposition further include: substrate
Temperature is 600 DEG C~750 DEG C.
A kind of specific embodiment according to the present invention, the growth parameter(s) of the pulse laser deposition further include: film
Growth air pressure be 1 × 10-3Pa~50Pa.
Correspondingly, the present invention also proposes a kind of manufacturing method of lanthanum gallate film photoelectric detector, the gallic acid lanthanum film
Photodetector includes gallic acid lanthanum film, and the gallic acid lanthanum film is made by the manufacturing method of gallic acid lanthanum film above-mentioned
It makes.
The beneficial effects of the present invention are:
1. preparation process of the present invention is simple, LaAlO used3Substrate is commercial product, can obtain perovskite structure
The LaGaO of (00l) orientation3Film；Using commercialized preparation method pulsed laser deposition growing film, process controllability is strong,
It is easy to operate, the densification of gained film surface, thickness stable uniform, can large area preparation, it is reproducible.
2. the LaGaO of (00l) orientation of the resulting MSM type of the present invention3Film photoelectric detector dark current is minimum, ultraviolet
It can be seen that inhibiting and manufacturing process higher than high, responsiveness simple, there is vast potential for future development.
Detailed description of the invention
Fig. 1 is the LaAlO of the method preparation of one embodiment through the invention3The lanthanum gallate that (00l) is orientated in substrate is thin
The solar blind ultraviolet detector structural schematic diagram of film；
Fig. 2 is LaAlO made from the method with one embodiment of the invention3Single crystal substrates and in LaAlO3It is grown in substrate
The LaGaO of (00l) orientation3The XRD diagram of film；
Fig. 3 A is LaGaO made from the method with one embodiment of the invention3The uv-vis spectra of film；Fig. 3 B is
The LaGaO being calculated3The forbidden bandwidth of film；
Fig. 4 A is LaGaO made from the method with one embodiment of the invention3Film solar blind ultraviolet detector in no light,
Linear I-V curve under 365nm and 254nm illumination, Fig. 4 B are corresponding log coordinate I-V curves；
Fig. 5 A is gallic acid lanthanum film solar blind ultraviolet detector made from the method for one embodiment of the invention in 3V bias
Multiple switching I-T curve under 254nm illumination, Fig. 5 B are corresponding response device velocity fittings.
Specific embodiment
Generally speaking, the present invention proposes one kind in LaAlO3(00l) orientation of epitaxial growth perovskite structure in substrate
LaGaO3Film and the method for making photodetector.The condition of this method application pulsed laser deposition technology, growth is easy control
System, process controllability is strong, easy to operate, densification of gained film surface, thickness stable uniform, can large area prepare, be reproducible.
Photodetector of the invention is suitable for solar blind ultraviolet detector.
The LaAlO that the present invention is orientated with (100)3For substrate, pulsed laser deposition method growth (00l) orientation is utilized
LaGaO3Film is as photosensitive layer.
The present invention by ultraviolet photolithographic method prepares metal electrode again on a photoresist layer, and (such as Au layers or Au/Ti layers interdigital
Electrode), to obtain the photoelectric detector of MSM structure.The solar blind ultraviolet detector being prepared by the method for the invention,
Structure is MSM type sandwich structure, is LaAlO respectively from top to bottom3Substrate, (00l) are orientated LaGaO3Film, metal electrode.
The present invention also proposes a kind of photodetector, the optoelectronic film and electrode layer including substrate and formation on substrate,
The optoelectronic film is the film of above-mentioned method for manufacturing thin film production.
The present invention is further illustrated below in conjunction with attached drawing and by specific embodiment, which is that a kind of to prepare day blind
The method of ultraviolet detector, this method comprises the following steps:
(1) LaAlO for taking a piece of 5mm × 5mm × 0.5mm size (100) to be orientated3Substrate is successively immersed in by substrate
15 milliliters of acetone, dehydrated alcohol, ultrasound 15 minutes respectively in deionized water, are rinsed with the deionized water of flowing again after taking-up,
Finally with dry N2Air-blowing is dry, waits and using in next step.
(2) by the above-mentioned LaAlO cleaned up3Substrate is put into settling chamber, is grown on it using pulsed laser deposition
LaGaO3Film, with LaGaO3Monocrystalline is target, and the specific growth parameter(s) of pulsed laser deposition technology is as follows: back end vacuum pressure
Less than 1 × 10-6Pa, work atmosphere are oxygen, and operating air pressure 10Pa, underlayer temperature is 700 DEG C, optical maser wavelength 248nm,
Laser energy is 2J/cm2, pulse laser frequency 2Hz, under umber of pulse is 10000, obtained LaGaO3The thickness of film is about
100nm。
(3) LaGaO of above-mentioned preparation3Film obtains the interdigital electrode pattern of hollow out with standard ultraviolet photolithographic technology, uses
Magnetically controlled sputter method is in film surface successive splash-proofing sputtering metal Ti layers (about 20nm) and Au layers (about 50nm) the acquisition interdigital electricity of Au/Ti
Pole, the finger beam of interdigital metal electrode are 10 μm, refer to a length of 200 μm, each interdigital spacing is 20 μm, interdigital totally 20 pairs.Sputter work
Skill condition is as follows: back end vacuum is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, and operating air pressure 3Pa splashes
Penetrating power is 40W, and Ti layers of sputtering time is 20s, and Au layers of sputtering time is 50s.
(00l) orientation LaGaO is prepared through the above steps3Film solar blind ultraviolet detector is as shown in Figure 1, include
(100) LaAlO being orientated3Substrate 1, (00l) are orientated LaGaO3Film 2 and interdigital electrode 3.Add 3V outside 3 two sides of interdigital electrode
Bias, electric current are then flowed into from positive electrode, pass through photosensitive layer LaGaO3Film is flowed out from negative electrode, constitutes metal-semiconductor-gold
Belong to (MSM) type solar blind ultraviolet detector.
Fig. 2 gives LaAlO3Single crystalline substrate XRD and it is grown in LaAlO3LaGaO on substrate3The XRD of film is removed
LaAlO3Outside the diffraction maximum of substrate, only LaGaO3(100) serial diffraction maximum, illustrates that all samples are along (00l)
The LaGaO of crystal face epitaxial growth3Film.
Fig. 3 A and Fig. 3 B give LaGaO3The Ultraviolet visible absorption spectrum of film and the LaGaO being calculated3Film
Forbidden bandwidth, it can be seen from the figure that the ABSORPTION EDGE of film is all in 280nm or so, forbidden bandwidth has bright in 4.5eV or so
Aobvious solar blind UV sensitivity characteristic.
Fig. 4 A and Fig. 4 B give solar blind ultraviolet detector in dark, 254nm and 365nm (light intensity 1mW/cm2) illumination
Under I-V curve.Under dark and 365nm illumination, LaGaO3The electric current of film solar blind ultraviolet detector is all very small.And
It is 1mW/cm in light intensity2254nm illumination under, with the increase of forward bias, photoelectric current has apparent increase.In 3V,
The electric current of detector increases to 221nA, Light To Dark Ratio I from the 0.4nA under dark situations254/IdarkIt is 552, and shows film material
Expect that there is strong response to the ultraviolet light of 254nm, it is insensitive to the light of 365nm, almost do not respond.
Fig. 5 A and Fig. 5 B give under 3V bias and to be turned on light the I-t curve for closing and measuring under 254nm illumination by continuous lamp.
20 I-t circulations are repeated in the present embodiment, which shows good repeatability.By being further fitted, it can be seen that
The detector rising response time τr1/τr2And die-away time τd1/τd2Respectively 0.30s/5.37s and 0.46s/6.46s.
For specific embodiment disclosed in above-described embodiment, those skilled in the art can become in a certain range
Change, specific as follows: according to the preferred embodiment of the present invention, the target is LaGaO3Monocrystalline target or 99.99% purity
Above ceramic target, preferably monocrystalline target.The deposition process work atmosphere be oxygen, film grow operating air pressure be 1 ×
10-3Pa~50Pa, preferably 10Pa.The underlayer temperature is 600 DEG C~750 DEG C, preferably 700 DEG C.The optical maser wavelength is preferred
For 248nm, pulsed laser energy 1J/cm2~5J/cm2, preferably 2J/cm2, pulse laser frequency is 1Hz~5Hz, preferably
For 2Hz, umber of pulse is preferably under 10000.Obtained LaGaO3The thickness of film is preferably 50nm to 200nm.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of lanthanum gallate film photoelectric detector, including substrate, the LaGaO being sequentially stacked3Film and electrode, it is characterised in that:
The gallic acid lanthanum film is the perovskite structure LaGaO of (00l) orientation3Film, the substrate are LaAlO3Substrate.
2. lanthanum gallate film photoelectric detector as described in claim 1, it is characterised in that: the LaAlO3Substrate is that (100) take
To.
3. lanthanum gallate film photoelectric detector as claimed in claim 1 or 2, it is characterised in that: the electrode include titanium layer and/
Or layer gold.
4. lanthanum gallate film photoelectric detector as claimed in claim 1 or 2, it is characterised in that: the thickness of the gallic acid lanthanum film
Degree is 50nm to 200nm.
5. a kind of manufacturing method of gallic acid lanthanum film, comprising: on substrate, thin using pulse laser deposition growth lanthanum gallate
Film；It is characterized by: the gallic acid lanthanum film is the perovskite structure LaGaO of (00l) orientation3Film, the substrate are LaAlO3
Substrate.
6. the manufacturing method of gallic acid lanthanum film as claimed in claim 5, it is characterised in that: the life of the pulse laser deposition
Long parameter includes: that pulsed laser energy is 1J/cm2~5J/cm2。
7. the manufacturing method of gallic acid lanthanum film as claimed in claim 6, it is characterised in that: the life of the pulse laser deposition
Long parameter further include: pulse laser frequency is 1Hz~5Hz.
8. the manufacturing method of gallic acid lanthanum film as claimed in claim 7, it is characterised in that: the life of the pulse laser deposition
Long parameter further include: underlayer temperature is 600 DEG C~750 DEG C.
9. the manufacturing method of gallic acid lanthanum film as claimed in claim 8, it is characterised in that: the life of the pulse laser deposition
Long parameter further include: the growth air pressure of film is 1 × 10-3Pa~50Pa.
10. a kind of manufacturing method of lanthanum gallate film photoelectric detector, the lanthanum gallate film photoelectric detector includes lanthanum gallate
Film, which is characterized in that the gallic acid lanthanum film is the system by gallic acid lanthanum film described in any one of claim 5 to 9
It makes manufactured by method.
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