CN109957759A - Cu adulterates β-Ga2O3The preparation method of film and corresponding structure - Google Patents
Cu adulterates β-Ga2O3The preparation method of film and corresponding structure Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 96
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 24
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000002156 mixing Methods 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 5
- 238000000280 densification Methods 0.000 abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 8
- 238000007664 blowing Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 235000019441 ethanol Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- NFFYXVOHHLQALV-UHFFFAOYSA-N copper(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Cu].[Cu] NFFYXVOHHLQALV-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of Cu to adulterate β-Ga2O3The preparation method of film and corresponding structure include the following steps: to generate the gallium oxide film for mixing copper by magnetron sputtering method cosputtering copper and gallium oxide；The gallium oxide film for mixing copper is annealed, Cu is generated and adulterates β-Ga2O3Film.The atomic ratio of Cu and Ga in the gallium oxide film for mixing copper control in 0.012~0.048 range.Cu prepared by the present invention adulterates β-Ga2O3Film surface is evenly distributed, and film thickness is controllable, and preparation method of the invention is easy to operate, and process controllability is strong, the densification of gained film surface, thickness stable uniform, can large area preparation, it is reproducible.
Description
Technical field
The invention belongs to photoelectric semiconductor material technical fields, and in particular to one kind adulterates β-Ga based on Cu2O3The system of film
Preparation Method and corresponding structure.
Background technique
Forbidden bandwidth EgGallium oxide (the Ga of about 4.9eV2O3) it is that a kind of dark purple exterior domain of novel broad stopband direct band gap is high
Spend transparent semiconductor material.It is low etc. with UV, visible light light transmission rate height, breakdown field powerful (~8MV/cm), energy loss
Characteristic, in transparent conductive electrode, solar blind ultraviolet detector, field effect transistor, information-storing device, gas sensor, LED substrate
Huge application prospect is shown in equal devices, is a kind of multifunctional light electric material of great application potential.Ga2O3There are five types of tools
Isomer, respectively α-Ga2O3,β-Ga2O3,γ-Ga2O3,δ-Ga2O3With ε-Ga2O3, with β-Ga under normal temperature and pressure2O3Most
Stablize, research report is also in the majority with β phase at present.But β-Ga2O3Electric conductivity is poor, seriously restricts its application range.Selection
Suitable doped chemical can change Ga2O3Electronic structure and introduce defect level, therefore adjustable optical band gap and electronics
Characteristic.
As 1B race element, Cu is Ga2O3Potential p-type dopant, because of Cu2+(0.073nm) and Ga3+(0.062nm)
Ion size it is similar.Less about this report at present, someone prepares Cu doping β-Ga using rf magnetron sputtering2O3
Film has studied Cu doping β-Ga2O3The photoelectric properties of film also utilize first principle, to the energy band knot of the film after doping
Structure is analyzed, it is found that the optical band gap of doping film becomes smaller, and fermi level is mobile to valence band direction, and introduces shallow acceptor
There is Red Shift Phenomena in the ABSORPTION EDGE of impurity energy level, the film after doping.But the film quality prepared at present is not high, focuses mostly on resonable
By research, while the method used is expensive, is not suitable for producing on a large scale.
Summary of the invention
(1) technical problems to be solved
Present invention seek to address that the prior art is not available the method preparation high quality Cu doping β-Ga of low cost2O3Film
The problem of.
(2) technical solution
In order to solve the above technical problems, the present invention proposes a kind of Cu doping β-Ga2O3The preparation method of film, including it is as follows
Step: cosputtering copper and gallium oxide on substrate generate the gallium oxide film for mixing copper；The gallium oxide film for mixing copper is carried out
Annealing generates Cu and adulterates β-Ga2O3Film.
According to the preferred embodiment of the present invention, the gallium oxide film for mixing copper is grown on substrate by magnetron sputtering method.
According to the preferred embodiment of the present invention, the atomic ratio of the Cu in the gallium oxide film for mixing copper and Ga exists
In 0.012~0.048 range.
According to the preferred embodiment of the present invention, Cu target and Ga are used in the magnetron sputtering method2O3Target splashes Cu target
Penetrating power is 7W, to Ga2O3The sputtering power of target is 80W~120W.
According to the preferred embodiment of the present invention, the doping of the copper in the gallium oxide film is 4.2at.%.
According to the preferred embodiment of the present invention, the substrate is c surface sapphire substrate.
According to the preferred embodiment of the present invention: the temperature of the annealing is 750 DEG C.
According to the preferred embodiment of the present invention, the heating rate of the annealing is 5 DEG C/min, annealing time 10h.
According to the preferred embodiment of the present invention, the gallium oxide film for mixing copper with a thickness of 100nm~1000nm.
The present invention also proposes a kind of Cu doping β-Ga2O3Membrane structure, the Cu adulterate β-Ga2O3Film is by above-mentioned system
Preparation Method is made.
(3) beneficial effect
Cu prepared by the present invention adulterates β-Ga2O3Film surface is evenly distributed, and film thickness is controllable, and of the invention
Preparation method is easy to operate, and process controllability is strong, the densification of gained film surface, thickness stable uniform, can large area preparation, repeat
Property is good.The present invention is that doping forms β-Ga2O3Film provides theory and technology and supports.
Detailed description of the invention
Fig. 1 is Cu doping β-Ga of the invention2O3The principle of magnetron-sputtering figure that the preparation method of film uses；
Fig. 2 is the Cu doping β-Ga of the method for the present invention preparation2O3The XRD diagram of film；
Fig. 3 is the doping of Cu made from the method for the present invention β-Ga2O3The uv-vis spectra and its band gap of film；
Fig. 4 A- Fig. 4 D is that Cu doping β-Ga is made in the method for the present invention2O3The XPS of film schemes.
Specific embodiment
The present invention proposes magnetron co-sputtering and adulterates β-Ga in conjunction with annealing process to prepare Cu2O3Film, and by experiment
The range of Cu doping has been determined.
Specifically, Cu proposed by the present invention adulterates β-Ga2O3The preparation method of film can be total to excessively on substrate first
The gallium oxide film of copper is mixed in sputtering growth, and then the gallium oxide film for mixing copper is annealed, and is generated Cu and is adulterated β-Ga2O3
Film.The gallium oxide film that copper is mixed in growth, which preferably uses, passes through magnetron sputtering method.Substrate in the present invention is the face c indigo plant
Jewel substrate.The thickness of the gallium oxide film for mixing copper is preferably 100nm~1000nm.
It is tested through experiment, the atomic ratio of Cu and Ga in the gallium oxide film for mixing copper are preferably 0.012~0.048
In range.The doping of copper more preferably in gallium oxide film is 4.2at.%.
In order to control the atomic ratio of Cu and Ga, the present invention uses Cu target and Ga in magnetron sputtering method2O3, and be preferably pair
The sputtering power of Cu target is 7W, to Ga2O3The sputtering power of target is 80W~120W.
In addition, the temperature of annealing process of the invention is preferably between 750 DEG C~950 DEG C, the liter of annealing through measuring
Warm speed is 5 DEG C/min, annealing time 10h.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
Fig. 1 gives preparation Cu doping preparation β-Ga2O3The schematic diagram of film.Using pure Cu target and Ga2O3Ceramic target
Cosputtering, and by the power of fixed Cu target, regulate and control Ga2O3The power of ceramic target regulates and controls the doping of Cu.
Embodiment 1
It first takes a piece of c surface sapphire substrate to be successively dipped into acetone, ethyl alcohol, each ultrasonic 10 minutes in deionized water, takes out
It is rinsed again with deionized water afterwards, finally with dry N2Air-blowing is dry, for use.It is heavy that the above-mentioned Sapphire Substrate cleaned up is put into
Product room grows the Ga of the Cu doping of one layer of about 700nm using magnetron sputtering on it2O3Film.With 99.99% purity
Ga2O3Ceramics are main target, are secondary target with pure Cu.Fixed Cu sputtering power 7W, Ga2O3Sputtering power is regulated to 80W.Film
Growth design parameter it is as follows: back end vacuum be 1 × 10-4Pa, work atmosphere are Ar gas, operating air pressure 0.8Pa, underlayer temperature
It is 750 DEG C, sputtering time 5h.By the Ga of above-mentioned growth2O3Film is in N2Middle annealing 10h, annealing temperature are 750 DEG C.By XPS
Analysis can obtain Cu:Ga=0.046:0.954.
Embodiment 2
It first takes a piece of c surface sapphire substrate to be successively dipped into acetone, ethyl alcohol, each ultrasonic 10 minutes in deionized water, takes out
It is rinsed again with deionized water afterwards, finally with dry N2Air-blowing is dry, for use.It is heavy that the above-mentioned Sapphire Substrate cleaned up is put into
Product room grows the Ga of the Cu doping of one layer of about 700nm using magnetron sputtering on it2O3Film.With 99.99% purity
Ga2O3Ceramics are main target, are secondary target with pure Cu.Fixed Cu sputtering power 7W, Ga2O3Sputtering power is regulated to 100W.Film
Growth design parameter it is as follows: back end vacuum be 1 × 10-4Pa, work atmosphere are Ar gas, operating air pressure 0.8Pa, underlayer temperature
It is 750 DEG C, sputtering time 5h.By the Ga of above-mentioned growth2O3Film is in N2Middle annealing 10h, annealing temperature are 750 DEG C.By XPS
Analysis can obtain Cu:Ga=0.031:0.969.
Embodiment 3
It first takes a piece of c surface sapphire substrate to be successively dipped into acetone, ethyl alcohol, each ultrasonic 10 minutes in deionized water, takes out
It is rinsed again with deionized water afterwards, finally with dry N2Air-blowing is dry, for use.It is heavy that the above-mentioned Sapphire Substrate cleaned up is put into
Product room grows the Ga of the Cu doping of one layer of about 700nm using magnetron sputtering on it2O3Film.With 99.99% purity
Ga2O3Ceramics are main target, are secondary target with pure Cu.Fixed Cu sputtering power 7W, Ga2O3Sputtering power is regulated to 120W.Film
Growth design parameter it is as follows: back end vacuum be 1 × 10-4Pa, work atmosphere are Ar gas, operating air pressure 0.8Pa, underlayer temperature
It is 750 DEG C, sputtering time 5h.By the Ga of above-mentioned growth2O3Film is in N2Middle annealing 10h, annealing temperature are 750 DEG C.By XPS
Analysis can obtain Cu:Ga=0.012:0.988.
Embodiment 4
It first takes a piece of c surface sapphire substrate to be successively dipped into acetone, ethyl alcohol, each ultrasonic 10 minutes in deionized water, takes out
It is rinsed again with deionized water afterwards, finally with dry N2Air-blowing is dry, for use.It is heavy that the above-mentioned Sapphire Substrate cleaned up is put into
Product room grows the Ga of the Cu doping of one layer of about 700nm using magnetron sputtering on it2O3Film.With 99.99% purity
Ga2O3Ceramics are main target, are secondary target with pure Cu.Fixed Cu sputtering power 7W, Ga2O3Sputtering power is regulated to 140W.Film
Growth design parameter it is as follows: back end vacuum be 1 × 10-4Pa, work atmosphere are Ar gas, operating air pressure 0.8Pa, underlayer temperature
It is 750 DEG C, sputtering time 5h.By the Ga of above-mentioned growth2O3Film is in N2Middle annealing 10h, annealing temperature are 750 DEG C.By XPS
Analysis can obtain Cu:Ga=0.009:0.991.
Comparative example 1
It first takes a piece of c surface sapphire substrate to be successively dipped into acetone, ethyl alcohol, each ultrasonic 10 minutes in deionized water, takes out
It is rinsed again with deionized water afterwards, finally with dry N2Air-blowing is dry, for use.It is heavy that the above-mentioned Sapphire Substrate cleaned up is put into
Product room grows one layer of about undoped Ga of 700nm using magnetron sputtering on it2O3Film.With 99.99% purity
Ga2O3Ceramics are main target, fixed Ga2O3Sputtering power 100W.The growth design parameter of film is as follows: back end vacuum is 1 × 10-4Pa, work atmosphere are Ar gas, and operating air pressure 0.8Pa, underlayer temperature is 750 DEG C, sputtering time 5h.By above-mentioned growth
Ga2O3Film is in N2Middle annealing 10h, annealing temperature are 750 DEG C.
Fig. 2 gives the pure Ga to anneal at 750 DEG C2O3Film, Cu adulterate Ga2O3The XRD diagram of film.When the doping of Cu
When amount is lower than 4.2at.%, the diffraction maximum of film with β-Ga2O3It is corresponding, with the crystal matter of the increase film of Cu doping
Amount gradually increases, simultaneously The diffraction maximum in face can be deviated to low-angle, this result may be due to Cu
Caused by the ionic radius difference of the position that doping is entered instead of Ga, Cu and Ga.It can be obtained when the doping of Cu is 4.2at.%
Purer β-the Ga of high quality2O3Film.When the doping of Cu is 4.6at.%, β-Ga2O3The corresponding diffraction maximum of film will appear
More miscellaneous peak affects film phase purity of state and quality.We can analyze out when the doping of Cu is from XRD diagram
β-the Ga obtained when 4.2at.%2O3The crystal quality of film is best.The doping of Cu excessively will affect the crystal quality of film,
So that phase is become impure or even Cu is precipitated on surface.
Fig. 3 gives β-Ga2O3β-Ga is adulterated with 4.2at.%Cu2O3Uv-vis spectra and its band gap (illustration).By
This visible Cu adulterates the β-Ga prepared2O3Compared to β-Ga2O3Apparent red shift is had, band gap is much smaller than pure β-Ga2O3.This can
Can be formed caused by acceptor impurity level in band gap since Cu foreign atom is activated after annealing.
Fig. 4 gives 4.2at.%Cu doping β-Ga2O3The XPS of film schemes.Wherein, Fig. 4 A, 4B, 4C, 4D are respectively complete
Thus the map of spectrum, Ga3d, Cu 2p, O 1s can also be printed by analysis we have found that adulterating the Cu to enter with+divalent presence
Card will lead to the corresponding movement of diffraction maximum generation of film with the increase of Cu doping.
For specific embodiment disclosed in above-described embodiment, those skilled in the art can become in a certain range
Change, specific as follows: according to the preferred embodiment of the present invention, the target is the Ga of 99.99% purity2O3Ceramic target.It is described
Magnetron sputtering deposition process work atmosphere is Ar gas, and it is 0.1Pa~10Pa, preferably 0.8Pa that film, which grows operating air pressure,.The lining
Bottom temperature is 600 DEG C~850 DEG C, preferably 750 DEG C.Cu target as sputter power is fixed as 7W, Ga2O3Sputtering power be 80W~
140W, preferably 120W, sputtering time are preferably 5h.Obtained β-Ga2O3The thickness of film is preferably 700nm.
Cu prepared by the present invention adulterates β-Ga2O3Film surface is evenly distributed, and film thickness is controllable, and of the invention
Preparation method is easy to operate, and process controllability is strong, the densification of gained film surface, thickness stable uniform, can large area preparation, repeat
Property is good.The present invention is that doping forms β-Ga2O3Film provides theory and technology and supports.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of Cu adulterates β-Ga2O3The preparation method of film, which comprises the steps of:
Cosputtering copper and gallium oxide on substrate generate the gallium oxide film for mixing copper；
The gallium oxide film for mixing copper is annealed, Cu is generated and adulterates β-Ga2O3Film.
2. preparation method as described in claim 1, it is characterised in that: grow the oxygen for mixing copper on substrate by magnetron sputtering method
Change gallium film.
3. preparation method as claimed in claim 1 or 2, it is characterised in that: Cu and Ga in the gallium oxide film for mixing copper
Atomic ratio in 0.012~0.048 range.
4. preparation method as claimed in claim 2, it is characterised in that: use Cu target and Ga in the magnetron sputtering method2O3Target,
Sputtering power to Cu target is 7W, to Ga2O3The sputtering power of target is 80W~140W.
5. preparation method as claimed in claim 3, it is characterised in that: the doping of the copper in the gallium oxide film is
4.2at.%.
6. preparation method as claimed in claim 1 or 2, it is characterised in that: the substrate is c surface sapphire substrate.
7. preparation method as claimed in claim 1 or 2, it is characterised in that: the temperature of the annealing is 750 DEG C.
8. preparation method as claimed in claim 7, it is characterised in that: the heating rate of the annealing is 5 DEG C/min, when annealing
Between be 10h.
9. preparation method as claimed in claim 1 or 2, it is characterised in that: the gallium oxide film for mixing copper with a thickness of
100nm~1000nm.
10. a kind of Cu adulterates β-Ga2O3Membrane structure, it is characterised in that: the Cu adulterates β-Ga2O3Film is by claims 1 or 2
The preparation method is made.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112126897A (en) * | 2020-10-09 | 2020-12-25 | 南京信息工程大学 | Preparation method of alpha-phase gallium oxide film |
| CN112951948A (en) * | 2021-01-18 | 2021-06-11 | 郑州大学 | Homojunction photoelectric detector based on gallium oxide energy band regulation and control and preparation method thereof |
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| CN112962143A (en) * | 2020-12-30 | 2021-06-15 | 中国科学院长春光学精密机械与物理研究所 | Annealed oxide semiconductor film and two-step annealing method for improving crystallization quality of oxide semiconductor film |
| CN112951948A (en) * | 2021-01-18 | 2021-06-11 | 郑州大学 | Homojunction photoelectric detector based on gallium oxide energy band regulation and control and preparation method thereof |
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