CN106876516B - All solid state neutron detector of integrated form based on ZnO thin film transistor and preparation method thereof - Google Patents
All solid state neutron detector of integrated form based on ZnO thin film transistor and preparation method thereof Download PDFInfo
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- CN106876516B CN106876516B CN201710079697.XA CN201710079697A CN106876516B CN 106876516 B CN106876516 B CN 106876516B CN 201710079697 A CN201710079697 A CN 201710079697A CN 106876516 B CN106876516 B CN 106876516B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/06—Measuring neutron radiation with scintillation detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of all solid state neutron detectors of the integrated form based on ZnO thin film transistor and preparation method thereof, the ZnO film of one layer of high quality is prepared using radio-frequency magnetron sputter method on a si substrate, ZnO thin film transistor ultraviolet light detector is prepared using photoetching process on this basis, it is uniform using magnetron sputtering method preparation surface on it again, crystalline quality and good B, Ga codope the ZnO scintillator film of scintillation properties, to be prepared for boron and gallium co-doped ZnO scintillator film-ZnO thin film transistor ultraviolet light detector-Si substrat structure neutron detector.Neutron is converted to α particle as neutron conversion coating using B, Ga codope ZnO scintillator film by the present invention, α particle further excites B, Ga codope ZnO scintillator film to generate ultraviolet light, ZnO thin film transistor ultraviolet light detector is recycled to detect ultraviolet light, to realize the detection to neutron, detection accuracy is high, high reliablity.
Description
Technical field
The present invention relates to a kind of high-energy radiation detectors and preparation method thereof, more particularly to a kind of neutron detector and its
Preparation method is applied to emission detecting sensor technical field.
Background technique
In recent decades, with the development of nuclear science technology, the progress of human civilization, radioactive nucleus element and its relevant
Application of the x-ray apparatus in fields such as industry, military, medical treatment, scientific research and teaching is also more and more extensive, but the following core
Reactor, nuclear weapon, radioactive waste storage and transport, radioactive source lose and medical irradiation accident etc. caused by nuclear leakage risk
Also higher and higher, after especially Japanese " 311 " violent earthquake causes " Fukushima nuclear accident ", people are even more to " safe nuclear power ", safety
Nuclear device has urgent need.On the other hand, the world today is faced with increasingly severe international terrorist activity, international public peace
Entirely just by the threat from various explosives, radioactive substance etc..Therefore, people increasingly pay close attention to X, α, β, gamma-rays,
The contour radiable detection of neutron and early warning propose requirements at the higher level to the relevant technologies, and people need more high and low function of cost performance
Consumption, the radiation detector that portable, response is fast, easy to use, stability is good.It is a large amount of due to that can be generated when the fission of radioactive nucleus element
Neutron, solar windstorm attack terrestrial time and also bring along high-energy neutron current, therefore in numerous radiation detection technologies, neutron is visited
Radiation monitoring of the survey technology in fields such as public safety, military affairs, nuclear industry, nuclear medicine, scientific research and aerospaces, safety
Protection aspect has more wide application prospect, and also there is an urgent need to develop novel neutron detection skills for the development in these fields
Art.In these requirements, at present either based on the BF of gas compartment3With3He proportional detector, or based on boron coated ion chamber
Neutron detector etc. is all difficult preferably to meet.Other such as scintillator neutron detectors, such as due to the device of scintillator and detection light
Photomultiplier tube (PMT) is separated from each other, and PMT itself is also more complex, so that total volume is larger.Therefore it is converted using solid neutron
Material and solids detector and it is integrated be one of research emphasis, such as semiconductor detector.Wherein semiconductor detector by
In simple process, low in energy consumption, small in size, energy resolution is high the features such as, in high-performance, micromation, low-power consumption neutron detector
In have advantage and bright prospects.
ZnO is important II-VI group compound semiconductor, direct band gap broad stopband (3.37eV at room temperature), high exciton knot
Close can (60MeV), highly anti-radiation performance (being only second to diamond), high electromechanical coupling factor, high electron mobility, it is cheap,
Nontoxic etc., these excellent properties make it have extensive purposes, such as transparent electrode, ultraviolet light detector etc..And by mixing
The ZnO of miscellaneous such as Ga, In also have excellent scintillation properties, are the preferred flash detection materials of α particle in D-T accelerator for neutron production
Material.Compared with traditional inorganic scintillator, ZnO scintillator except with high light output in addition to, and find so far decaying when
Between shortest scintillation material, this is advantageously implemented the high-speed response of device.ZnO crystal has better than GaN, Si, GaAs and CdS etc.
The radiation resistance of semiconductor material can be applied to the environment of high radiation, such as space, nuclear power station.Currently, about ZnO neutron
The preparation of sensitive detection parts there is no report.
Summary of the invention
In order to solve prior art problem, it is an object of the present invention to overcome the deficiencies of the prior art, and to provide one kind
All solid state neutron detector of integrated form based on ZnO thin film transistor and preparation method thereof uses radio frequency magnetron on grid layer
Sputtering method prepares the ZnO film of one layer of high quality, purple using photoetching process preparation ZnO thin film transistor (TFT) on this basis
Outer optical detector, then it is uniform using magnetron sputtering method preparation surface on it, crystalline quality and scintillation properties good B, Ga are total
ZnO scintillator film is adulterated, thus to realize that a kind of boron and gallium co-doped ZnO scintillator film/ZnO thin film transistor (TFT) is ultraviolet
The preparation of optical detector/Si substrat structure neutron detector provides effective ways.Integrated form prepared by the present invention is all solid state
Neutron detector for the fields such as public safety, military affairs, nuclear industry, nuclear medicine, scientific research and aerospace radiation monitoring,
Security protection aspect is of great significance and application prospect.
Purpose is created to reach foregoing invention, the present invention adopts the following technical solutions:
The all solid state neutron detector of a kind of integrated form based on ZnO thin film transistor, using with three terminal device structure
ZnO thin film transistor ultraviolet light detector is successively co-doped with ZnO scintillator film, ZnO thin film transistor ultraviolet detector by B, Ga
Device and substrate three parts carry out the integrated form composite construction that stacking is assembled, and wherein B, Ga are co-doped with ZnO scintillator film conduct
The neutron transition material layer in the neutron detection first step is carried out, incident neutron radiation can be converted to ultraviolet light, and make ultraviolet
Light emission directly detects ultraviolet light to ZnO thin film transistor ultraviolet light detector, ZnO thin film transistor ultraviolet light detector, thus
The detection to neutron radiation is realized indirectly.
As currently preferred technical solution, the ZnO thin film transistor ultraviolet light detector is successively by grid, grid
Insulating layer, ZnO film layer, source electrode and drain electrode form TFT transistor device, and the ZnO film layer between source electrode and drain electrode is as ditch
Channel layer forms TFT channel structure, and described B, Ga are co-doped with ZnO scintillator film secure bond and are set between source electrode and drain electrode
On ZnO film channel layer surface, B, Ga be co-doped with ZnO scintillator film can by ultraviolet light directly to the ZnO film layer of channel layer into
Row is incident.
The technical solution further preferred as one kind of above scheme, the grid is used as substrate simultaneously, as grid
The comprehensive function layer integrally shared with substrate.It is preferred that the grid is the material doped Si composite material substrate of B element, used
Si composite material substrate resistivity be 10-4~10-1Ω·cm。
The technical solution further preferred as the another kind of above scheme is visited in the ZnO thin film transistor ultraviolet light
The outer surface side for surveying the grid of device is additionally provided with substrate.
As the further preferred technical solution of above scheme, it is co-doped with according to doping element quality of materials relative to B, Ga
The mass percent of ZnO scintillator film gross mass is co-doped in ZnO scintillator film as doping calculation method in B, Ga,
Wherein, the doping of B is 1~30wt.%, and the doping of Ga is 1~10wt.%.
As the further preferred technical solution of above scheme, the gate insulation layer with a thickness of 30~300nm, ZnO
Film with a thickness of 50~500nm, the thickness for being co-doped with ZnO scintillator film with a thickness of 100~550nm, B, Ga of source electrode and drain electrode
0.1~2 μm of degree.
As the further preferred technical solution of above scheme, gate insulation layer SiO2Film, source electrode and drain electrode use
Gallium is ZnO thin film doped, according to incorporation gallium quality relative to the ZnO thin film doped gross mass of gallium mass percent as doping
Calculation method, the gallium doping in gallium is ZnO thin film doped are 1~6wt.%.
A kind of preparation method of all solid state neutron detector of integrated form based on ZnO thin film transistor, includes the following steps:
The preparation of a.ZnO thin film transistor (TFT) ultraviolet detector device:
The grid layer of TFT is prepared on substrate or the grid layer while being used as substrate, then uses thermal oxidation method,
The gate insulation layer with a thickness of 30~300nm is prepared on grid layer, then using ZnO as target, passes through the side of rf magnetron sputtering
Method, deposition thickness is the ZnO film of 50~500nm on gate insulation layer, as TFT channel layer；Then photoetching process is utilized, is made
Photoresist forms required structure, recycles HCl:H2The volume ratio of O is the hydrochloric acid and CH of 1:20003COOH:H2The volume ratio of O is
The acetic acid of 1:2000 performs etching the ZnO film surface of TFT channel layer region, then removes remaining photoresist, utilizes again
Photoetching process makes photoresist form required structure, then uses magnetron sputtering method, it is ZnO thin film doped with a thickness of 100 to prepare gallium
The GZO film layer of~550nm obtains complex structural device as the source electrode and drain electrode of TFT transistor, then will be made above
Complex structural device impregnate in acetone at least two hours, recycle lift-off technique, remove remaining photoresist, make source
ZnO film surface exposure between pole and drain electrode comes out, and forms TFT channel structure, and obtain required structure has ZnO film ditch
The TFT transistor device of channel layer and three terminal device structure, as ZnO thin film transistor ultraviolet detector device；Grid layer it
Upper preferred preparation SiO2Film is as gate insulation layer；On ZnO film layer, preferably prepare gallium it is ZnO thin film doped as source electrode and
Drain electrode, according to incorporation gallium quality relative to the ZnO thin film doped gross mass of gallium mass percent as doping calculation method,
Gallium doping in gallium is ZnO thin film doped is preferably 1~6wt.%；When the grid layer is used as substrate simultaneously, grid are formed
The comprehensive function layer that pole and substrate integrally share preferably prepares the material doped Si composite material substrate of B element as the grid
Pole layer, the resistivity of used Si composite material substrate are 10-4~10-1Ω·cm；
B. the preparation of neutron detector:
On the TFT transistor device prepared in the step a, using photoetching process, photoresist is made to form required photoetching
Patterned layer is adopted on the ZnO film channel layer of the ZnO thin film transistor ultraviolet detector device of no photoetching offset plate figure layer
Continue to prepare B, Ga with magnetron sputtering method and be co-doped with ZnO film, when carrying out magnetron sputtering, according to doping element quality of materials relative to
The mass percent of ZnO ceramic target gross mass is as doping calculation method, using 1~30wt.% of B doping, Ga doping 1
The ZnO ceramic target of~10wt.% is target, and sputtering atmosphere is argon gas, by the ZnO of ZnO thin film transistor ultraviolet detector device
Thin film channel layer is co-doped with the substrate of ZnO scintillator film as growth B, Ga, and ZnO film channel layer is heated to 100~500
DEG C, control sputtering pressure is 1~20mTorr, and control sputtering power is 50~300W, after carrying out pre-sputtering 1-15min, is opened
Baffle 30~200min of formal sputtering obtains with a thickness of 0.1~2 μ on the ZnO film channel layer surface between source electrode and drain electrode
B, Ga of m is co-doped with ZnO scintillator film, finally utilizes lift-off technique, removes remaining photoresist, i.e., in source electrode and drain electrode
Between ZnO film channel layer surface on be prepared for that there is B, Ga of required shape to be co-doped with ZnO scintillator film, finally obtain according to
It is secondary by B, Ga be co-doped with ZnO scintillator film, ZnO thin film transistor ultraviolet light detector and substrate three parts carry out stacking assembling knot
The integrated form composite construction of conjunction, wherein B, Ga are co-doped with ZnO scintillator film and turn as the neutron carried out in the neutron detection first step
Incident neutron radiation can be converted to ultraviolet light by conversion materials layer, and make ultraviolet light directive ZnO thin film transistor ultraviolet detector
Device, ZnO thin film transistor ultraviolet light detector directly detect ultraviolet light, to realize the detection to neutron radiation indirectly.
The present invention compared with prior art, has following obvious prominent substantive distinguishing features and remarkable advantage:
1. the present invention is all solid state neutron detection device for the gas neutron detector being widely used at present,
Have the characteristics that small in size, structure is simple, low energy consumption, portable and at low cost；
2. ZnO scintillator of the invention, which has, is currently known shortest die-away time, it is only second to the Flouride-resistani acid phesphatase of diamond
Performance, therefore can be worked under high-throughput, high-energy radiation condition using ZnO as material for detector, it is also able to achieve super
The preparation and application of the neutron detector of high-speed response；
3. the present invention is converted to neutron irradiation using boron and gallium co-doped ZnO film scintillator as neutron transition material ultraviolet
Then light realizes the detection to neutron using ultraviolet light detector indirectly, and by ZnO film scintillator and ZnO film ultraviolet light
Detector is integrated；One aspect of the present invention is advantageously implemented the miniaturization of device, on the other hand compared with the existing technology other
Neutron detector realizes that the responsiveness of ultraviolet light neutron detector of the present invention is more to the indirect detection of neutron by detection α particle
Height, and the selection of device architecture type is richer；In addition, neutron transition material and ultraviolet detector material of the invention is all ZnO,
It solves and converts layer material in other devices from subsequent probe device because binding force, stress and the interfacial state caused by material is different are asked
Topic, simplifies preparation process, improves device performance；
4. ZnO film preparation of the invention is simple compared to single crystal preparation technique, it is high that batch grows feasibility, and is based on film
Flatness of the response be suitble to prepare the flat panel detector of large area, ZnO film can be prepared by chemical method, can also pass through physical method
It obtains, low in particular by the cost of ZnO films deposited by reactive magnetron sputtering, speed is fast, and it is high-quality, it is thin to be suitable for extensive deposition
Film；
5. traditional ZnO film ultraviolet light detector focuses mostly in two terminal device, and the ZnO film used in the present invention is brilliant
Body pipe ultraviolet light detector is a kind of three terminal device, will be compared with traditional two terminal device, transistor ultraviolet light detector of the present invention
Low-dark current and high detection sensitivity can be realized by control grid bias, intelligence degree is high, and detection accuracy is high, reliability
It is high.
Detailed description of the invention
Fig. 1 is that the structure of all solid state neutron detector of integrated form of the embodiment of the present invention one based on ZnO thin film transistor is former
Manage schematic diagram.
Fig. 2 is the flow diagram of the ZnO thin film transistor ultraviolet detector device preparation method of the embodiment of the present invention one.
Specific embodiment
Details are as follows for the preferred embodiment of the present invention:
Embodiment one:
In the present embodiment, referring to Fig. 1, a kind of all solid state neutron detector of integrated form based on ZnO thin film transistor is adopted
With the ZnO thin film transistor ultraviolet light detector with three terminal device structure, ZnO scintillator film, ZnO are successively co-doped with by B, Ga
Thin film transistor (TFT) ultraviolet light detector and substrate three parts carry out the integrated form composite construction that stacking is assembled, and wherein B, Ga are total
ZnO scintillator film is mixed as the neutron transition material layer carried out in the neutron detection first step, incident neutron radiation can be turned
It is changed to ultraviolet light, and makes ultraviolet light directive ZnO thin film transistor ultraviolet light detector, ZnO thin film transistor ultraviolet light detector
Ultraviolet light is directly detected, to realize the detection to neutron radiation indirectly.
In the present embodiment, referring to Fig. 1, the ZnO thin film transistor ultraviolet light detector be it is main successively by substrate and
Grid shared substrate, gate insulation layer, ZnO film layer, source electrode and drain electrode form TFT transistor device, between source electrode and drain electrode
ZnO film layer forms TFT channel structure, described B, Ga are co-doped with ZnO scintillator film secure bond and are set to source as channel layer
On ZnO film channel layer surface between pole and drain electrode, B, Ga are co-doped with ZnO scintillator film can be by ultraviolet light directly to channel layer
ZnO film layer carry out it is incident.The grid is used as substrate simultaneously, the comprehensive function layer integrally shared as grid and substrate.
The grid is the material doped Si composite material substrate of B element, and the resistivity of used Si composite material substrate is 10-3
Ω·cm。
In the present embodiment, referring to Fig. 1, ZnO scintillator film is co-doped with relative to B, Ga according to doping element quality of materials
The mass percent of gross mass is co-doped in ZnO scintillator film, wherein the doping of B as doping calculation method in B, Ga
For 30wt.%, the doping of Ga is 10wt.%.The gate insulation layer with a thickness of 30nm, ZnO film with a thickness of 50nm, source
0.8 μm of thickness for being co-doped with ZnO scintillator film with a thickness of 100nm, B, Ga of pole and drain electrode.Gate insulation layer is SiO2Film, source
Pole and drain electrode are ZnO thin film doped using gallium, the quality percentage according to the quality of incorporation gallium relative to the ZnO thin film doped gross mass of gallium
Than as doping calculation method, the gallium doping in gallium is ZnO thin film doped is 3wt.%.
In the present embodiment, referring to fig. 2, a kind of integrated form based on ZnO thin film transistor all solid state neutron detector
Preparation method includes the following steps:
The preparation of a.ZnO thin film transistor (TFT) ultraviolet detector device:
It is used as grid layer simultaneously using substrate, and by substrate, forms the comprehensive function layer that grid and substrate integrally share, adopts
The Si composite material substrate for using B element material doped is as substrate and grid shared substrate, used Si composite material substrate
Resistivity be 10-3Ω cm, the present embodiment use highly doped, high conductivity Si as substrate, while also as the grid of TFT
Pole (gate), structure is simple, and small in size, preparation cost is low, then cleans to substrate and grid shared substrate, specifically:
Used Si composite material substrate acetone, methanol and deionized water are cleaned by ultrasonic 15 minutes respectively first, wash away surface
Impurity and organic matter, then use high-purity N2Air-blowing is dry, places into the baking oven that temperature is 100 DEG C and toasts 4 minutes, for use；So
Thermal oxidation method is used afterwards, and the SiO with a thickness of 30nm is prepared on grid layer2Gate insulation layer, then using ZnO as target, by penetrating
The method of frequency magnetron sputtering, in SiO2Deposition thickness is the ZnO film of 50nm on gate insulation layer, as TFT channel layer, such as Fig. 2
(a) shown in；Then photoetching process is utilized, photoresist (Photo Resist) is made to form the required structure as shown in Fig. 2 (b), then
Utilize HCl:H2The volume ratio of O is the hydrochloric acid and CH of 1:20003COOH:H2The volume ratio of O is the acetic acid of 1:2000, to TFT channel
The ZnO film surface of layer region performs etching, and obtains structure shown in Fig. 2 (c), then removes remaining photoresist, obtains Fig. 2 (d)
Shown in structure, again utilize photoetching process, make photoresist (Photo Resist) formed the required structure as shown in Fig. 2 (e),
Then magnetron sputtering method is used, the GZO film layer with a thickness of 100nm of gallium doping ZnO, the source electrode as TFT transistor are prepared
(Source) it and drains (Drain), obtains the complex structural device as shown in Fig. 2 (f), when preparing GZO film layer, according to incorporation
The quality of gallium relative to the ZnO thin film doped gross mass of gallium mass percent as doping calculation method, it is thin in gallium doping ZnO
Gallium doping in film is 3wt.%, then impregnates complex structural device made above in acetone after two hours, then benefit
With lift-off technique, remaining photoresist is removed, the ZnO film surface exposure between source electrode and drain electrode is come out, formed such as
TFT channel structure shown in Fig. 2 (g), the TFT with ZnO film channel layer and three terminal device structure for obtaining required structure are brilliant
Body tube device, as ZnO thin film transistor ultraviolet detector device；
B. the preparation of neutron detector:
On the TFT transistor device prepared in the step a, using photoetching process, make photoresist (Photo
Resist photoetching offset plate figure layer needed for) being formed, in the ZnO thin film transistor ultraviolet detector device of no photoetching offset plate figure layer
On ZnO film channel layer, preparation B, Ga are continued using magnetron sputtering method and are co-doped with ZnO film, when carrying out magnetron sputtering, according to incorporation
Element material quality relative to ZnO ceramic target gross mass mass percent as doping calculation method, using B doping
The ZnO ceramic target of 30wt.%, Ga doping 10wt.% are target, and sputtering atmosphere is argon gas, by ZnO thin film transistor ultraviolet light
The ZnO film channel layer of sensitive detection parts is co-doped with the substrate of ZnO scintillator film as growth B, Ga, and ZnO film channel layer is added
Heat is to 200 DEG C, and control sputtering pressure is 6mTorr, and control sputtering power is 150W, after carrying out pre-sputtering 5min, opens baffle
Formal sputtering 120min obtains being co-doped with a thickness of 0.8 μm B, Ga on the ZnO film channel layer surface between source electrode and drain electrode
ZnO scintillator film finally utilizes lift-off technique, removes remaining photoresist, i.e., the ZnO between source electrode and drain electrode is thin
It is prepared for that there is B, Ga of required shape to be co-doped with ZnO scintillator film on film channel layer surface, finally obtains successively total by B, Ga
It mixes ZnO scintillator film, ZnO thin film transistor ultraviolet light detector and substrate three parts and carries out the integrated form that stacking is assembled
Composite construction, as shown in Figure 1, wherein B, Ga are co-doped with ZnO scintillator film as the neutron turn carried out in the neutron detection first step
Incident neutron radiation can be converted to ultraviolet light by conversion materials layer, and make ultraviolet light directive ZnO thin film transistor ultraviolet detector
Device, ZnO thin film transistor ultraviolet light detector directly detect ultraviolet light, to realize the detection to neutron radiation indirectly.
The present embodiment uses the ZnO film of radio-frequency magnetron sputter method one layer of high quality of preparation on a si substrate, basic herein
It is upper that ZnO thin film transistor (TFT) ultraviolet light detector is prepared using photoetching process, then table is prepared using magnetron sputtering method on it
Face is uniform, crystalline quality and good B, Ga codope the ZnO scintillator film of scintillation properties, thus to realize a kind of boron and gallium co-doped
ZnO scintillator film-ZnO thin film transistor (TFT) ultraviolet light detector-Si substrat structure neutron detector provides effectively
Method, the present embodiment is the neutron detector of composite construction, using B, Ga codope ZnO scintillator film as neutron convert
Neutron is converted to α particle by layer, and α particle further excites B, Ga codope ZnO scintillator film to generate ultraviolet light, is recycled
ZnO thin film transistor ultraviolet light detector detects ultraviolet light (UV), to realize the detection to neutron.
Experimental test and analysis:
It uses252Cf neutron source is co-doped with ZnO scintillator film-ZnO film crystal to B, Ga that embodiment one prepares
The neutron detector of pipe ultraviolet light detector-Si substrate composite construction is irradiated, its electric current-before and after neutron irradiation is passed through
Voltage characteristic it was found that, which has apparent response to neutron source, under -5V voltage, device photoelectric stream and dark current it
Ratio is greater than 5.
Embodiment one is preparation boron and gallium co-doped ZnO scintillator film-ZnO thin film transistor (TFT) ultraviolet light detector-Si
The integrated form neutron detector of substrat structure, in the present embodiment device architecture, B, Ga are co-doped with ZnO scintillator film as neutron
It detects the neutron in the first step and converts layer material, which utilizes10B(n,α)7Neutron is converted to α particle by Li reaction, simultaneously
The conversion layer itself is as a kind of scintillator material in the particle excitated lower ultraviolet light that can issue specific wavelength of α, therefore B, Ga are total
It mixes ZnO film flashing physical efficiency and incident neutron is converted into ultraviolet light.Nuclear radiation detector is utilized for the second step of neutron detection
Photon is detected, embodiment one detects ultraviolet light using ZnO thin film transistor (TFT) ultraviolet light detector, thus realization pair indirectly
The detection of neutron.The all solid state neutron detector of the integrated form of embodiment one is for public safety, military affairs, nuclear industry, nuclear medicine, section
The fields radiation monitoring such as research and aerospace, security protection aspect is of great significance and application prospect.
Embodiment two:
The present embodiment is basically the same as the first embodiment, and is particular in that:
In the present embodiment, the preparation method of all solid state neutron detector of a kind of integrated form based on ZnO thin film transistor,
Include the following steps:
The preparation of a.ZnO thin film transistor (TFT) ultraviolet detector device:
It is used as grid layer simultaneously using substrate, and by substrate, forms the comprehensive function layer that grid and substrate integrally share, adopts
The Si composite material substrate for using B element material doped is as substrate and grid shared substrate, used Si composite material substrate
Resistivity be 10-3Ω cm, the present embodiment use highly doped, high conductivity Si as substrate, while also as the grid of TFT
Pole (gate), structure is simple, and small in size, preparation cost is low, then cleans to substrate and grid shared substrate, specifically:
Used Si composite material substrate acetone, methanol and deionized water are cleaned by ultrasonic 15 minutes respectively first, wash away surface
Impurity and organic matter, then use high-purity N2Air-blowing is dry, places into the baking oven that temperature is 100 DEG C and toasts 4 minutes, for use；So
Thermal oxidation method is used afterwards, and the SiO with a thickness of 30nm is prepared on grid layer2Gate insulation layer, then using ZnO as target, by penetrating
The method of frequency magnetron sputtering, in SiO2Deposition thickness is the ZnO film of 50nm on gate insulation layer, as TFT channel layer；Then sharp
With photoetching process, structure needed for forming photoresist (Photo Resist) recycles HCl:H2The volume ratio of O is 1:2000's
Hydrochloric acid and CH3COOH:H2The volume ratio of O is the acetic acid of 1:2000, is performed etching to the ZnO film surface of TFT channel layer region,
Remaining photoresist is removed again, utilizes photoetching process again, and structure needed for forming photoresist (Photo Resist) is then adopted
With magnetron sputtering method, the GZO film layer with a thickness of 100nm of gallium doping ZnO, the source electrode as TFT transistor are prepared
(Source) and drain electrode (Drain), obtain complex structural device, when preparing GZO film layer, according to incorporation gallium quality relative to
Gallium doping of the mass percent of the ZnO thin film doped gross mass of gallium as doping calculation method, in gallium is ZnO thin film doped
For 6wt.%, then complex structural device made above is impregnated in acetone after two hours, recycles lift-off technique,
Remaining photoresist is removed, the ZnO film surface exposure between source electrode and drain electrode is come out, TFT channel structure is formed, obtains institute
The TFT transistor device with ZnO film channel layer and three terminal device structure of structure is needed, it is ultraviolet as ZnO thin film transistor
Light-detecting device；
B. the preparation of neutron detector:
On the TFT transistor device prepared in the step a, using photoetching process, make photoresist (Photo
Resist photoetching offset plate figure layer needed for) being formed, in the ZnO thin film transistor ultraviolet detector device of no photoetching offset plate figure layer
On ZnO film channel layer, preparation B, Ga are continued using magnetron sputtering method and are co-doped with ZnO film, when carrying out magnetron sputtering, according to incorporation
Element material quality relative to ZnO ceramic target gross mass mass percent as doping calculation method, using B doping
The ZnO ceramic target of 30wt.%, Ga doping 10wt.% are target, and sputtering atmosphere is argon gas, by ZnO thin film transistor ultraviolet light
The ZnO film channel layer of sensitive detection parts is co-doped with the substrate of ZnO scintillator film as growth B, Ga, and ZnO film channel layer is added
Heat is to 100 DEG C, and control sputtering pressure is 20mTorr, and control sputtering power is 300W, after carrying out pre-sputtering 1min, opens gear
Plate formal sputtering 30min is obtained on the ZnO film channel layer surface between source electrode and drain electrode total with a thickness of 0.1 μm B, Ga
ZnO scintillator film is mixed, lift-off technique is finally utilized, removes remaining photoresist, i.e., the ZnO between source electrode and drain electrode
It is prepared for that there is B, Ga of required shape to be co-doped with ZnO scintillator film in thin film channel layer surface, finally obtains successively by B, Ga
Be co-doped with ZnO scintillator film, ZnO thin film transistor ultraviolet light detector and substrate three parts carry out stacking be assembled it is integrated
Formula composite construction, wherein B, Ga be co-doped with ZnO scintillator film as carry out the neutron detection first step in neutron transition material layer,
Incident neutron radiation can be converted to ultraviolet light, and make ultraviolet light directive ZnO thin film transistor ultraviolet light detector, ZnO is thin
Film transistor ultraviolet light detector directly detects ultraviolet light, to realize the detection to neutron radiation indirectly.
Experimental test and analysis:
It uses252Cf neutron source is co-doped with ZnO scintillator film-ZnO film crystal to B, Ga that embodiment two prepares
The neutron detector of pipe ultraviolet light detector-Si substrate composite construction is irradiated, its electric current-before and after neutron irradiation is passed through
Voltage characteristic it was found that, which has apparent response to neutron source, under -5V voltage, device photoelectric stream and dark current it
Ratio is greater than 8.
Embodiment two is preparation boron and gallium co-doped ZnO scintillator film-ZnO thin film transistor (TFT) ultraviolet light detector-Si
The integrated form neutron detector of substrat structure, in the present embodiment device architecture, B, Ga are co-doped with ZnO scintillator film as neutron
It detects the neutron in the first step and converts layer material, which utilizes10B(n,α)7Neutron is converted to α particle by Li reaction, simultaneously
The conversion layer itself is as a kind of scintillator material in the particle excitated lower ultraviolet light that can issue specific wavelength of α, therefore B, Ga are total
It mixes ZnO film flashing physical efficiency and incident neutron is converted into ultraviolet light.Nuclear radiation detector is utilized for the second step of neutron detection
Photon is detected, embodiment two detects ultraviolet light using ZnO thin film transistor (TFT) ultraviolet light detector, thus realization pair indirectly
The detection of neutron.The all solid state neutron detector of the integrated form of embodiment two is for public safety, military affairs, nuclear industry, nuclear medicine, section
The fields radiation monitoring such as research and aerospace, security protection aspect is of great significance and application prospect.
Embodiment three:
The present embodiment is substantially the same as in the previous example, and is particular in that:
In the present embodiment, the preparation method of all solid state neutron detector of a kind of integrated form based on ZnO thin film transistor,
Include the following steps:
The preparation of a.ZnO thin film transistor (TFT) ultraviolet detector device:
It is used as grid layer simultaneously using substrate, and by substrate, forms the comprehensive function layer that grid and substrate integrally share, adopts
The Si composite material substrate for using B element material doped is as substrate and grid shared substrate, used Si composite material substrate
Resistivity be 10-3Ω cm, the present embodiment use highly doped, high conductivity Si as substrate, while also as the grid of TFT
Pole (gate), structure is simple, and small in size, preparation cost is low, then cleans to substrate and grid shared substrate, specifically:
Used Si composite material substrate acetone, methanol and deionized water are cleaned by ultrasonic 15 minutes respectively first, wash away surface
Impurity and organic matter, then use high-purity N2Air-blowing is dry, places into the baking oven that temperature is 100 DEG C and toasts 4 minutes, for use；So
Thermal oxidation method is used afterwards, and the SiO with a thickness of 300nm is prepared on grid layer2Gate insulation layer, then using ZnO as target, by penetrating
The method of frequency magnetron sputtering, in SiO2Deposition thickness is the ZnO film of 500nm on gate insulation layer, as TFT channel layer；Then
Using photoetching process, structure needed for forming photoresist (Photo Resist) recycles HCl:H2The volume ratio of O is 1:2000
Hydrochloric acid and CH3COOH:H2The volume ratio of O is the acetic acid of 1:2000, is carved to the ZnO film surface of TFT channel layer region
Erosion, then remaining photoresist is removed, photoetching process is utilized again, structure needed for forming photoresist (Photo Resist), so
Magnetron sputtering method is used afterwards, prepares the GZO film layer with a thickness of 550nm of gallium doping ZnO, the source electrode as TFT transistor
(Source) and drain electrode (Drain), obtain complex structural device, when preparing GZO film layer, according to incorporation gallium quality relative to
Gallium doping of the mass percent of the ZnO thin film doped gross mass of gallium as doping calculation method, in gallium is ZnO thin film doped
For 1wt.%, then complex structural device made above is impregnated in acetone after two hours, recycles lift-off technique,
Remaining photoresist is removed, the ZnO film surface exposure between source electrode and drain electrode is come out, TFT channel structure is formed, obtains institute
The TFT transistor device with ZnO film channel layer and three terminal device structure of structure is needed, it is ultraviolet as ZnO thin film transistor
Light-detecting device；
B. the preparation of neutron detector:
On the TFT transistor device prepared in the step a, using photoetching process, make photoresist (Photo
Resist photoetching offset plate figure layer needed for) being formed, in the ZnO thin film transistor ultraviolet detector device of no photoetching offset plate figure layer
On ZnO film channel layer, preparation B, Ga are continued using magnetron sputtering method and are co-doped with ZnO film, when carrying out magnetron sputtering, according to incorporation
Element material quality relative to ZnO ceramic target gross mass mass percent as doping calculation method, using B doping
The ZnO ceramic target of 10wt.%, Ga doping 1wt.% are target, and sputtering atmosphere is argon gas, by ZnO thin film transistor ultraviolet light
The ZnO film channel layer of sensitive detection parts is co-doped with the substrate of ZnO scintillator film as growth B, Ga, and ZnO film channel layer is added
Heat is to 500 DEG C, and control sputtering pressure is 1mTorr, and control sputtering power is 50W, after carrying out pre-sputtering 15min, opens baffle
Formal sputtering 200min obtains being co-doped with a thickness of 2 μm B, Ga on the ZnO film channel layer surface between source electrode and drain electrode
ZnO scintillator film finally utilizes lift-off technique, removes remaining photoresist, i.e., the ZnO between source electrode and drain electrode is thin
It is prepared for that there is B, Ga of required shape to be co-doped with ZnO scintillator film on film channel layer surface, finally obtains successively total by B, Ga
It mixes ZnO scintillator film, ZnO thin film transistor ultraviolet light detector and substrate three parts and carries out the integrated form that stacking is assembled
Composite construction, wherein B, Ga are co-doped with ZnO scintillator film as the neutron transition material layer carried out in the neutron detection first step, energy
Incident neutron radiation is converted into ultraviolet light, and makes ultraviolet light directive ZnO thin film transistor ultraviolet light detector, ZnO film
Transistor ultraviolet light detector directly detects ultraviolet light, to realize the detection to neutron radiation indirectly.
Experimental test and analysis:
It uses252Cf neutron source is co-doped with ZnO scintillator film-ZnO film crystal to B, Ga that embodiment three prepares
The neutron detector of pipe ultraviolet light detector-Si substrate composite construction is irradiated, its electric current-before and after neutron irradiation is passed through
Voltage characteristic it was found that, which has apparent response to neutron source, under -5V voltage, device photoelectric stream and dark current it
Ratio is greater than 10.
Embodiment three is preparation boron and gallium co-doped ZnO scintillator film-ZnO thin film transistor (TFT) ultraviolet light detector-Si
The integrated form neutron detector of substrat structure, in the present embodiment device architecture, B, Ga are co-doped with ZnO scintillator film as neutron
It detects the neutron in the first step and converts layer material, which utilizes10B(n,α)7Neutron is converted to α particle by Li reaction, simultaneously
The conversion layer itself is as a kind of scintillator material in the particle excitated lower ultraviolet light that can issue specific wavelength of α, therefore B, Ga are total
It mixes ZnO film flashing physical efficiency and incident neutron is converted into ultraviolet light.Nuclear radiation detector is utilized for the second step of neutron detection
Photon is detected, embodiment three detects ultraviolet light using ZnO thin film transistor (TFT) ultraviolet light detector, thus realization pair indirectly
The detection of neutron.The all solid state neutron detector of the integrated form of embodiment three is for public safety, military affairs, nuclear industry, nuclear medicine, section
The fields radiation monitoring such as research and aerospace, security protection aspect is of great significance and application prospect.
Example IV:
The present embodiment is substantially the same as in the previous example, and is particular in that:
In the present embodiment, it is additionally provided in the outer surface side of the grid of the ZnO thin film transistor ultraviolet light detector
Substrate, the ZnO thin film transistor ultraviolet light detector are main successively by substrate, grid, gate insulation layer, ZnO film layer, source
Pole and drain electrode form TFT transistor device, and the ZnO film layer between source electrode and drain electrode forms TFT channel knot as channel layer
Structure, described B, Ga are co-doped with the ZnO film channel layer surface that ZnO scintillator film secure bond is set between source electrode and drain electrode
On, B, Ga, which are co-doped with ZnO scintillator film, directly to carry out incidence to the ZnO film layer of channel layer for ultraviolet light.Example IV is adopted
Ultraviolet light is detected with ZnO thin film transistor (TFT) ultraviolet light detector, to realize the detection to neutron indirectly.Example IV
The all solid state neutron detector of integrated form for public safety, military affairs, nuclear industry, nuclear medicine, scientific research and aerospace
Equal fields radiation monitoring, security protection aspect is of great significance and application prospect.
The embodiment of the present invention is illustrated above in conjunction with attached drawing, but the present invention is not limited to the above embodiments, it can be with
The purpose of innovation and creation according to the present invention makes a variety of variations, under the Spirit Essence and principle of all technical solutions according to the present invention
Change, modification, substitution, combination or the simplification made, should be equivalent substitute mode, as long as meeting goal of the invention of the invention,
It is former without departing from the technology of all solid state neutron detector of integrated form the present invention is based on ZnO thin film transistor and preparation method thereof
Reason and inventive concept, belong to protection scope of the present invention.
Claims (5)
1. a kind of all solid state neutron detector of integrated form based on ZnO thin film transistor, it is characterised in that: using with three end-apparatus
It is purple to be successively co-doped with ZnO scintillator film, ZnO thin film transistor by B, Ga for the ZnO thin film transistor ultraviolet light detector of part structure
Outer optical detector and substrate three parts carry out the integrated form composite construction that stacking is assembled, and wherein B, Ga are co-doped with ZnO scintillator
Incident neutron radiation can be converted to ultraviolet light as the neutron transition material layer carried out in the neutron detection first step by film,
And making ultraviolet light directive ZnO thin film transistor ultraviolet light detector, ZnO thin film transistor ultraviolet light detector directly detects ultraviolet
Light, to realize the detection to neutron radiation indirectly；
The preparation method of all solid state neutron detector of integrated form based on ZnO thin film transistor, includes the following steps:
The preparation of a.ZnO thin film transistor (TFT) ultraviolet detector device:
The grid layer of TFT is prepared on substrate, then uses thermal oxidation method, and preparation is on grid layer with a thickness of 30~300nm
Gate insulation layer, then using ZnO as target, by the method for rf magnetron sputtering, on gate insulation layer deposition thickness be 50~
The ZnO film of 500nm, as TFT channel layer；Then photoetching process is utilized, photoresist is made to form required structure, recycles HCl:
H2The volume ratio of O is the hydrochloric acid and CH of 1:20003COOH:H2The volume ratio of O is the acetic acid of 1:2000, to TFT channel layer region
ZnO film surface performs etching, then removes remaining photoresist, utilizes photoetching process again, photoresist is made to form required structure,
Then magnetron sputtering method is used, the ZnO thin film doped GZO film layer with a thickness of 100~550nm of gallium is prepared, as TFT crystal
The source electrode and drain electrode of pipe obtains complex structural device, then impregnates complex structural device made above in acetone at least
Two hours, stripping technology is recycled, remaining photoresist is removed, comes out the ZnO film surface exposure between source electrode and drain electrode,
TFT channel structure is formed, the TFT transistor device with ZnO film channel layer and three terminal device structure of required structure is obtained,
As ZnO thin film transistor ultraviolet detector device；
B. the preparation of neutron detector:
On the TFT transistor device prepared in the step a, using photoetching process, photoresist is made to form required photoresist figure
Shape layer, on the ZnO film channel layer of the ZnO thin film transistor ultraviolet detector device of no photoetching offset plate figure layer, using magnetic
Control sputtering method continues preparation B, Ga and is co-doped with ZnO film, when carrying out magnetron sputtering, according to doping element quality of materials relative to ZnO
The mass percent of ceramic target gross mass as doping calculation method, using 1~30wt.% of B doping, Ga doping 1~
The ZnO ceramic target of 10wt.% is target, and sputtering atmosphere is argon gas, and the ZnO of ZnO thin film transistor ultraviolet detector device is thin
Film channel layer is co-doped with the substrate of ZnO scintillator film as growth B, Ga, and ZnO film channel layer is heated to 100~500 DEG C,
Control sputtering pressure is 1~20mTorr, and control sputtering power is 50~300W, after carrying out pre-sputtering 1-15min, opens gear
Plate 30~200min of formal sputtering obtains with a thickness of 0.1~2 μm on the ZnO film channel layer surface between source electrode and drain electrode
B, Ga be co-doped with ZnO scintillator film, finally utilize stripping technology, remove remaining photoresist, i.e., between source electrode and drain electrode
ZnO film channel layer surface on be prepared for that there is B, Ga of required shape to be co-doped with ZnO scintillator film, finally obtain successively by
B, Ga is co-doped with ZnO scintillator film, ZnO thin film transistor ultraviolet light detector and substrate three parts and carries out what stacking was assembled
Integrated form composite construction.
2. all solid state neutron detector of integrated form according to claim 1 based on ZnO thin film transistor, it is characterised in that:
The grid is the material doped Si composite material substrate of B element, and the resistivity of used Si composite material substrate is 10-4~
10-1Ω·cm。
3. all solid state neutron detector of the integrated form according to claim 1 or claim 2 based on ZnO thin film transistor, feature exist
In: gate insulation layer SiO2Film, source electrode and drain electrode is ZnO thin film doped using gallium, mixes according to the quality of incorporation gallium relative to gallium
For the mass percent of miscellaneous ZnO film gross mass as doping calculation method, the gallium doping in gallium is ZnO thin film doped is 1
~6wt.%.
4. a kind of preparation method of all solid state neutron detector of integrated form based on ZnO thin film transistor, which is characterized in that including
Following steps:
The preparation of a.ZnO thin film transistor (TFT) ultraviolet detector device:
The grid layer of TFT is prepared on substrate or the grid layer while being used as substrate, thermal oxidation method is then used, in grid
On the layer of pole preparation with a thickness of 30~300nm gate insulation layer, then using ZnO as target, by the method for rf magnetron sputtering,
Deposition thickness is the ZnO film of 50~500nm on gate insulation layer, as TFT channel layer；Then photoetching process is utilized, photoetching is made
Glue forms required structure, recycles HCl:H2The volume ratio of O is the hydrochloric acid and CH of 1:20003COOH:H2The volume ratio of O is 1:
2000 acetic acid performs etching the ZnO film surface of TFT channel layer region, then removes remaining photoresist, utilizes light again
Carving technology makes photoresist form required structure, then uses magnetron sputtering method, prepare gallium it is ZnO thin film doped with a thickness of 100~
The GZO film layer of 550nm obtains complex structural device as the source electrode and drain electrode of TFT transistor, then will be made above
Complex structural device impregnates at least two hours in acetone, recycles stripping technology, removes remaining photoresist, makes source electrode and leakage
ZnO film surface exposure between pole comes out, formed TFT channel structure, obtain required structure have ZnO film channel layer and
The TFT transistor device of three terminal device structure, as ZnO thin film transistor ultraviolet detector device；
B. the preparation of neutron detector:
On the TFT transistor device prepared in the step a, using photoetching process, photoresist is made to form required photoresist figure
Shape layer, on the ZnO film channel layer of the ZnO thin film transistor ultraviolet detector device of no photoetching offset plate figure layer, using magnetic
Control sputtering method continues preparation B, Ga and is co-doped with ZnO film, when carrying out magnetron sputtering, according to doping element quality of materials relative to ZnO
The mass percent of ceramic target gross mass as doping calculation method, using 1~30wt.% of B doping, Ga doping 1~
The ZnO ceramic target of 10wt.% is target, and sputtering atmosphere is argon gas, and the ZnO of ZnO thin film transistor ultraviolet detector device is thin
Film channel layer is co-doped with the substrate of ZnO scintillator film as growth B, Ga, and ZnO film channel layer is heated to 100~500 DEG C,
Control sputtering pressure is 1~20mTorr, and control sputtering power is 50~300W, after carrying out pre-sputtering 1-15min, opens gear
Plate 30~200min of formal sputtering obtains with a thickness of 0.1~2 μm on the ZnO film channel layer surface between source electrode and drain electrode
B, Ga be co-doped with ZnO scintillator film, finally utilize stripping technology, remove remaining photoresist, i.e., between source electrode and drain electrode
ZnO film channel layer surface on be prepared for that there is B, Ga of required shape to be co-doped with ZnO scintillator film, finally obtain successively by
B, Ga is co-doped with ZnO scintillator film, ZnO thin film transistor ultraviolet light detector and substrate three parts and carries out what stacking was assembled
Integrated form composite construction, wherein B, Ga are co-doped with ZnO scintillator film as the neutron carried out in the neutron detection first step and convert material
Incident neutron radiation can be converted to ultraviolet light by the bed of material, and make ultraviolet light directive ZnO thin film transistor ultraviolet light detector,
ZnO thin film transistor ultraviolet light detector directly detects ultraviolet light, to realize the detection to neutron radiation indirectly.
5. the preparation method of all solid state neutron detector of integrated form according to claim 4 based on ZnO thin film transistor,
It is characterized in that: in the step a, SiO is prepared on grid layer2Film is as gate insulation layer；On ZnO film layer, system
Standby gallium is ZnO thin film doped to be used as source electrode and drain electrode, the quality according to the quality of incorporation gallium relative to the ZnO thin film doped gross mass of gallium
For percentage as doping calculation method, the gallium doping in gallium is ZnO thin film doped is 1~6wt.%；When the grid layer
When being used as substrate simultaneously, the comprehensive function layer that grid and substrate integrally share, the material doped Si composite wood of preparation B element are formed
Substrate is expected as the grid layer, and the resistivity of used Si composite material substrate is 10-4~10-1Ω·cm。
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