CN109037361A - A kind of high efficiency cadmium telluride diaphragm solar battery - Google Patents
A kind of high efficiency cadmium telluride diaphragm solar battery Download PDFInfo
- Publication number
- CN109037361A CN109037361A CN201811029637.8A CN201811029637A CN109037361A CN 109037361 A CN109037361 A CN 109037361A CN 201811029637 A CN201811029637 A CN 201811029637A CN 109037361 A CN109037361 A CN 109037361A
- Authority
- CN
- China
- Prior art keywords
- film
- cadmium telluride
- solar battery
- reflection film
- diaphragm solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000010408 film Substances 0.000 claims abstract description 48
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000005357 flat glass Substances 0.000 claims abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 3
- 238000007740 vapor deposition Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims abstract 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to a kind of high efficiency cadmium telluride diaphragm solar batteries, including existing cadmium telluride diaphragm solar battery base plate glass (1), Cadimium telluride thin film electric layer (2), it is characterised in that: prepare one layer of anti-reflection film (3) at the back side of cadmium telluride diaphragm solar battery base plate glass (1)；Anti-reflection film (3) material is silica, magnesium fluoride, any low refractive index film of titanium oxide, and the film refractive index of anti-reflection film (3) is 1.1 ~ 1.5, with a thickness of 45 ~ 200nm；Anti-reflection film (3) can be prepared by sol-gel, vapor deposition, magnetron sputtering, chemical vapor deposition, harsh etching method.The present invention has the advantage that: can increase by 3% or more using cadmium telluride thin-film battery component generating efficiency prepared by the technology of the present invention；Simple process and low cost；Light transmittance and power increment value are high.
Description
Technical field
The invention belongs to New Green Energy source domains, are related to a kind of area of solar cell, and in particular to a kind of high efficiency telluride
Vestalium thin-film solar cell.
Background technique
Compared with crystal silicon solar energy battery, thin-film solar cells material consumption is few, and more than ten nanometers of need arrive several hundred micro-
The thickness of rice, can be achieved with photoelectric conversion.Cadmium telluride (CdTe) thin-film solar cells is with its low cost, the realization of easy large area etc.
Advantage, occupied in thin-film solar cells it is important want position, and transparent conductive film (TCO) glass have high conductivity and from
It the advantages of body suede structure, is used widely in thin-film solar cells.But currently used transparent conductive film (TCO) glass
Glass transmitance is not high (being usually no more than 90%), and a big chunk luminous energy is caused not utilized rationally, therefore it is thin to improve cadmium telluride
The transmitance of film battery incident light seems very necessary and urgently.
Summary of the invention
Transparent conductive film (TCO) glass in cadmium telluride (CdTe) thin-film solar cells
The problem of incident light transmission rate not high (being usually no more than 90%), provide a kind of high efficiency cadmium telluride diaphragm solar battery.
To achieve the goals above, The technical solution adopted by the invention is as follows:
A kind of high efficiency cadmium telluride diaphragm solar battery, including existing cadmium telluride diaphragm solar battery base plate glass, telluride
Cadmium film electric layer, it is characterised in that: in the back side (the i.e. incidence of sunlight of cadmium telluride diaphragm solar battery base plate glass
Face) one layer of anti-reflection film of preparation；
The anti-reflection film be silica, magnesium fluoride, any low refractive index film of titanium oxide, anti-reflection film
Film refractive index is 1.1 ~ 1.5, with a thickness of 45 ~ 200nm.
Further, the thickness of the anti-reflection film can also be 45-69nm.
Further, the thickness of the anti-reflection film can also be 70-110nm.
Further, the thickness of the anti-reflection film can also be 111-150nm.
Further, the thickness of the anti-reflection film can also be 185-200nm.
Further, the anti-reflection film can pass through sol-gel, vapor deposition, magnetron sputtering, chemical vapor deposition, acid
Lithographic method preparation.
Anti-reflection film (reduces or eliminates the reflected light and system of optical element surface by optical interference humidification
Stray light), the sunlight incidence transmitance of base plate glass can be greatly improved, the increase of transmitance causes more sunlights by tellurium
Cadmium film electric layer is absorbed, so that the generating efficiency of cadmium telluride diaphragm solar battery is increased dramatically.
The present invention has the advantage that: can be increased using cadmium telluride thin-film battery component generating efficiency prepared by the technology of the present invention
3% or more；Simple process and low cost；Light transmittance and power increment value are high.
Detailed description of the invention:
Fig. 1 is the structural diagram of the present invention.
Specific embodiment
In conjunction with Fig. 1, the invention will be further described, a kind of high efficiency cadmium telluride diaphragm solar battery, specific implementation step
It is rapid as follows:
Embodiment one
A kind of cadmium telluride diaphragm solar battery includes glass substrate 1, Cadimium telluride thin film electric layer 2 and anti-reflection film 3, is subtracted
Anti- anti-reflection film 3 is the silicon oxide film of sol-gal process preparation, refractive index 1.15, with a thickness of 200nm；It is surveyed through the power of battery
Examination, cadmium telluride diaphragm solar battery generating efficiency increases by 3.5% than before after plating anti-reflection film 3.
Embodiment two
A kind of cadmium telluride diaphragm solar battery includes glass substrate 1, Cadimium telluride thin film electric layer 2 and anti-reflection film 3, is subtracted
Anti- anti-reflection film 3 is the magnesium fluoride film of vapour deposition method preparation, refractive index 1.27, with a thickness of 125nm；It is tested through the power of battery,
Cadmium telluride diaphragm solar battery generating efficiency increases by 3.6% than before after plating anti-reflection film 3.
Embodiment three
A kind of cadmium telluride diaphragm solar battery includes glass substrate 1, Cadimium telluride thin film electric layer 2 and anti-reflection film 3, is subtracted
Anti- anti-reflection film 3 is the thin film of titanium oxide of magnetron sputtering method preparation, refractive index 1.5, with a thickness of 45nm；It is surveyed through the power of battery
Examination, cadmium telluride diaphragm solar battery generating efficiency increases by 3.2% than before after plating anti-reflection film 3.
Example IV
A kind of cadmium telluride diaphragm solar battery includes glass substrate 1, Cadimium telluride thin film electric layer 2 and anti-reflection film 3, is subtracted
Anti- anti-reflection film 3 is the silicon oxide film of chemical vapour deposition technique preparation, refractive index 1.36, with a thickness of 98nm；Through battery function
Rate test, cadmium telluride diaphragm solar battery generating efficiency increases by 4.0% than before after plating anti-reflection film 3.
Claims (6)
1. a kind of high efficiency cadmium telluride diaphragm solar battery, including existing cadmium telluride diaphragm solar battery base plate glass (1),
Cadimium telluride thin film electric layer (2), it is characterised in that: prepare one at the back side of cadmium telluride diaphragm solar battery base plate glass (1)
Layer anti-reflection film (3)；
The anti-reflection film (3) is silica, magnesium fluoride, any low refractive index film of titanium oxide, and anti-reflection is thin
The film refractive index of film (3) is 1.1 ~ 1.5, with a thickness of 45 ~ 200nm.
2. a kind of high efficiency cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that: the anti-reflection
Film (3) thickness can also be 45-69nm.
3. a kind of high efficiency cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that: the anti-reflection
Film (3) thickness can also be 70-110nm.
4. a kind of high efficiency cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that: the anti-reflection
Film (3) thickness can also be 111-150nm.
5. a kind of high efficiency cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that: the anti-reflection
Film (3) thickness can also be 185-200nm.
6. a kind of high efficiency cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that: the anti-reflection
Film (3) can be prepared by sol-gel, vapor deposition, magnetron sputtering, chemical vapor deposition, harsh etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811029637.8A CN109037361A (en) | 2018-09-05 | 2018-09-05 | A kind of high efficiency cadmium telluride diaphragm solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811029637.8A CN109037361A (en) | 2018-09-05 | 2018-09-05 | A kind of high efficiency cadmium telluride diaphragm solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109037361A true CN109037361A (en) | 2018-12-18 |
Family
ID=64623295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811029637.8A Pending CN109037361A (en) | 2018-09-05 | 2018-09-05 | A kind of high efficiency cadmium telluride diaphragm solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109037361A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783157A (en) * | 2019-10-24 | 2020-02-11 | 北方夜视技术股份有限公司 | Composite optical film applied to multi-alkali photoelectric cathode and preparation method thereof |
| CN111540792A (en) * | 2020-05-09 | 2020-08-14 | 成都中建材光电材料有限公司 | Color cadmium telluride power generation glass and manufacturing method thereof |
| CN113943919A (en) * | 2021-12-20 | 2022-01-18 | 邯郸中建材光电材料有限公司 | Cadmium telluride power generation glass AR film coating machine and coating method |
| CN114420769A (en) * | 2021-12-31 | 2022-04-29 | 中建材蚌埠玻璃工业设计研究院有限公司 | Color film for increasing reflection of cadmium telluride thin film battery in sub-wave bands |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201503863U (en) * | 2009-10-16 | 2010-06-09 | 郑州金土地能源科技有限公司 | Cadmium tellude solar energy thin-film cell |
| CN102324446A (en) * | 2011-09-13 | 2012-01-18 | 上海太阳能电池研究与发展中心 | Preparation method of transparent conductive substrate used for film solar cell |
| CN202513170U (en) * | 2012-01-19 | 2012-10-31 | 蚌埠玻璃工业设计研究院 | High transparency conductive film glass for thin film solar battery |
| CN105322035A (en) * | 2014-06-05 | 2016-02-10 | 中物院成都科学技术发展中心 | Stainless steel foil solar cell and preparation method |
| CN205508831U (en) * | 2016-02-03 | 2016-08-24 | 厦门神科太阳能有限公司 | Solar skylight |
-
2018
- 2018-09-05 CN CN201811029637.8A patent/CN109037361A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201503863U (en) * | 2009-10-16 | 2010-06-09 | 郑州金土地能源科技有限公司 | Cadmium tellude solar energy thin-film cell |
| CN102324446A (en) * | 2011-09-13 | 2012-01-18 | 上海太阳能电池研究与发展中心 | Preparation method of transparent conductive substrate used for film solar cell |
| CN202513170U (en) * | 2012-01-19 | 2012-10-31 | 蚌埠玻璃工业设计研究院 | High transparency conductive film glass for thin film solar battery |
| CN105322035A (en) * | 2014-06-05 | 2016-02-10 | 中物院成都科学技术发展中心 | Stainless steel foil solar cell and preparation method |
| CN205508831U (en) * | 2016-02-03 | 2016-08-24 | 厦门神科太阳能有限公司 | Solar skylight |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783157A (en) * | 2019-10-24 | 2020-02-11 | 北方夜视技术股份有限公司 | Composite optical film applied to multi-alkali photoelectric cathode and preparation method thereof |
| CN110783157B (en) * | 2019-10-24 | 2021-11-05 | 北方夜视技术股份有限公司 | Composite optical film applied to multi-alkali photoelectric cathode and preparation method thereof |
| CN111540792A (en) * | 2020-05-09 | 2020-08-14 | 成都中建材光电材料有限公司 | Color cadmium telluride power generation glass and manufacturing method thereof |
| CN113943919A (en) * | 2021-12-20 | 2022-01-18 | 邯郸中建材光电材料有限公司 | Cadmium telluride power generation glass AR film coating machine and coating method |
| CN114420769A (en) * | 2021-12-31 | 2022-04-29 | 中建材蚌埠玻璃工业设计研究院有限公司 | Color film for increasing reflection of cadmium telluride thin film battery in sub-wave bands |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181218 |
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| RJ01 | Rejection of invention patent application after publication |