CN202917528U - High-efficiency non-micro-laminated solar cell - Google Patents
High-efficiency non-micro-laminated solar cell Download PDFInfo
- Publication number
- CN202917528U CN202917528U CN2012203885060U CN201220388506U CN202917528U CN 202917528 U CN202917528 U CN 202917528U CN 2012203885060 U CN2012203885060 U CN 2012203885060U CN 201220388506 U CN201220388506 U CN 201220388506U CN 202917528 U CN202917528 U CN 202917528U
- Authority
- CN
- China
- Prior art keywords
- layer
- battery
- solar cell
- obsorbing
- top battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a high-efficiency non-micro-laminated solar cell comprising a back electrode, a bottom cell body, a top cell body, a transparent conducting layer and a substrate. The back electrode, the bottom cell body, the top cell body, and the transparent conducting layer are successively laminated; the bottom cell body being a microcrystalline silicon cell includes a bottom cell n layer, a bottom cell absorption layer, and a bottom cell p layer, wherein the layers are successively stacked; and the top cell body being an amorphous silicon solar cell includes a top cell n layer, a top cell absorption layer and a top cell p layer, wherein the layers are successively stacked. According to the utility model, a novel method for manufacturing a solar cell is provided. The conversion efficiency of the cell is improved by enhancing the light absorption; and the deposition time of the microcrystalline silicon layer can be shortened by reducing the thickness of the microcrystalline silicon layer. Meanwhile, the thin microcrystalline silicon layer enables a thin film with a similar crystalline fraction and crystal grain size longitudinally to be obtained conveniently, thereby further improving the efficiency.
Description
Technical field
The utility model relates to technical field of solar batteries, particularly a kind of efficient non-little lamination solar cell.
Background technology
At present, laminated cell becomes the inexorable trend of silicon-based film solar cells development, and wherein non-little laminated cell is one of most potential hull cell wherein.Yet the solar cell of this structure and the transformation efficiency of crystal silicon solar batteries still have gap, also need further to improve; In addition, in non-little laminated cell, the thickness of microcrystalline silicon film is generally at 1.5-2 μ m, and deposition rate only has about 0.2nm, and is consuming time very long; And microcrystalline silicon film is along with the increase crystallization rate of deposit thickness increases, crystallite dimension increases, thereby introduces more defective, is unfavorable for the raising of battery efficiency.
The utility model content
The purpose of this utility model is to overcome the defective that prior art exists, and a kind of transformation efficiency that can improve by increasing Optical Absorption battery is provided, and reduces microcrystalline coating thickness with efficient non-little lamination solar cell of the sedimentation time of shortening microcrystal silicon layer.
The technical scheme that realizes the utility model purpose is: a kind of efficient non-little lamination solar cell has back electrode, end battery, top battery, transparency conducting layer and substrate; Described back electrode, end battery, top battery, transparency conducting layer stack gradually; Battery of the described end is the microcrystal silicon battery, and end battery has end battery n layer, end battery obsorbing layer and the end battery p layer that stacks gradually; Described top battery is amorphous silicon battery, and the top battery has top battery n layer, top battery obsorbing layer and the top battery p layer that stacks gradually.
The described substrate of technique scheme is transparency carrier or opaque substrate.
The described transparency carrier of technique scheme is phototropic face, has successively transparency conducting layer, top battery p layer and the top battery obsorbing layer of deposition on the transparency carrier; Has the cylindrical cavities that etching forms on the battery obsorbing layer of described top; Described top battery n layer, end battery p layer, end battery obsorbing layer, end battery n layer and back electrode are deposited on the battery obsorbing layer of top successively.
The described opaque substrate of technique scheme is shady face, has successively back electrode, end battery n layer and the end battery obsorbing layer of deposition on the opaque substrate; Has the columnar protrusions that etching forms on the battery obsorbing layer of the described end; Battery p layer of the described end, top battery n layer, top battery obsorbing layer, top battery p layer and transparency conducting layer are deposited on the end battery obsorbing layer successively.
The described top of technique scheme battery n layer is comprised of nanocrystalline SiOx:H or the SiNx:H of phosphorus doping.
The described transparency conducting layer of technique scheme can be FTO or ITO or BZO or AZO or Graphene.
The described opaque substrate of technique scheme can be at the bottom of the stainless steel lining.
The described transparency carrier of technique scheme can be simple glass or toughened glass or ultra-clear glasses or flexible transparent substrate.
The utlity model has positive effect:
(1) the utility model provides a kind of new method for manufacturing solar battery, can improve by increasing Optical Absorption the transformation efficiency of battery, reduces microcrystalline coating thickness to shorten the sedimentation time of microcrystal silicon layer; Thinner microcrystal silicon layer also helps the film that acquisition vertically has close crystallization rate and crystallite dimension simultaneously, thereby further raises the efficiency.
(2) the utility model can effectively increase the top battery be amorphous silicon battery (a-Si) to the absorption of blue wave band, thereby improve the short-circuit current density of top battery, and then improve the transformation efficiency of battery.
(3) the utility model can effectively increase end battery be microcrystal silicon battery (μ c-Si) to the absorption of red spectral band, thereby improve the short-circuit current density of end battery, and then improve the transformation efficiency of battery.。
(4) the utility model can effectively reduce the thickness of μ c-Si film because of the enhancing of absorbability, thereby shortens the processing procedure time.
(5) the μ c-Si film that the utility model is thinner is easier to the control of vertical crystallization rate and even grain size, thereby reduces the defective in the film, is conducive to the raising of transformation efficiency.
(6) top of the present utility model battery n layer is comprised of nanocrystalline SiOx:H or the SiNx:H of phosphorus doping; This material namely can be used as the p-i-n knot that the n layer forms the top battery, can be used as again the light absorption that the reflector increases the top battery.
Description of drawings
Content of the present utility model is easier to be expressly understood in order to make, and the below is described in further detail the utility model, wherein according to specific embodiment also by reference to the accompanying drawings
Fig. 1 is the schematic diagram of the utility model battery structure when being used for transparency carrier;
Fig. 2 is the vertical view of the utility model absorbed layer of the top battery of battery structure when being used for transparency carrier;
Fig. 3 is the front view of the utility model absorbed layer of the top battery of battery structure when being used for transparency carrier;
Fig. 4 is the schematic diagram of the utility model battery structure when being used for opaque substrate;
Fig. 5 is the vertical view of the utility model absorbed layer of the top battery of battery structure when being used for opaque substrate;
Fig. 6 is the front view of the utility model absorbed layer of the top battery of battery structure when being used for opaque substrate;
1. back electrodes among the figure, 2. end battery, 21. end battery n layers, 22. end battery obsorbing layers, 23. end battery p layers, 24. projection, 3. top battery, 31. top battery n layers, 32. top battery obsorbing layers, 33. top battery p layers, 34. cavity, 4. transparency conducting layer, 5. opaque substrate, 6. transparency carrier.
Embodiment
(embodiment 1)
See Fig. 1 to Fig. 3, the utlity model has back electrode 1, end battery 2, top battery 3, transparency conducting layer 4 and transparency carrier 6; Back electrode 1, end battery 2, top battery 3, transparency conducting layer 4 stack gradually; Transparency conducting layer 4 can be FTO or ITO or BZO or AZO or Graphene, and end battery 2 is the microcrystal silicon battery, and end battery 2 has end battery n layer 21, end battery obsorbing layer 22 and the end battery p layer 23 that stacks gradually; Top battery 3 is amorphous silicon battery, and top battery 3 has top battery n layer 31, top battery obsorbing layer 32 and the top battery p layer 33 that stacks gradually, and top battery n layer 31 is comprised of nanocrystalline SiOx:H or the SiNx:H of phosphorus doping.
Manufacture method of the present utility model: substrate is transparency carrier 6, and rete deposition is by transparency conducting layer 4 beginnings, successively deposit transparent conductive layer 4, top battery p layer 33 and top battery obsorbing layer 32 on transparency carrier 6; Then, etching forms some cylindrical cavities 34 on top battery obsorbing layer 32; At last, deposit successively top battery n layer 31, end battery p layer 23, end battery obsorbing layer 22, end battery n layer 21 and back electrode 1 on top battery obsorbing layer 32, forming substrate is efficient non-little lamination solar cell of transparency carrier 6 again.
(embodiment 2)
See Fig. 4 to Fig. 6, the utlity model has back electrode 1, end battery 2, top battery 3, transparency conducting layer 4 and opaque substrate 5; Back electrode 1, end battery 2, top battery 3, transparency conducting layer 4 stack gradually; Transparency conducting layer 4 can be FTO or ITO or BZO or AZO or Graphene, and end battery 2 is the microcrystal silicon battery, and end battery 2 has end battery n layer 21, end battery obsorbing layer 22 and the end battery p layer 23 that stacks gradually; Top battery 3 is amorphous silicon battery, and top battery 3 has top battery n layer 31, top battery obsorbing layer 32 and the top battery p layer 33 that stacks gradually, and top battery n layer 31 is comprised of nanocrystalline SiOx:H or the SiNx:H of phosphorus doping.
Manufacture method of the present utility model: substrate is opaque substrate 5, and the rete deposition deposits back electrode 1, end battery n layer 21 and end battery obsorbing layer 22 by back electrode 1 beginning successively at the bottom of the stainless steel lining; Then, etching forms columnar protrusions 24 on end battery obsorbing layer 22; At last, on end battery obsorbing layer 22, deposit successively again end battery p layer 23, top battery n layer 31, top battery obsorbing layer 32, top battery p layer 33 and transparency conducting layer 4.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (8)
1. an efficient non-little lamination solar cell is characterized in that: have back electrode (1), end battery (2), top battery (3), transparency conducting layer (4) and substrate; Described back electrode (1), end battery (2), top battery (3), transparency conducting layer (4) stack gradually; Battery of the described end (2) is the microcrystal silicon battery, and end battery (2) has end battery n layer (21), end battery obsorbing layer (22) and the end battery p layer (23) that stacks gradually; Described top battery (3) is amorphous silicon battery, and top battery (3) has top battery n layer (31), top battery obsorbing layer (32) and the top battery p layer (33) that stacks gradually.
2. efficient non-little lamination solar cell according to claim 1, it is characterized in that: described substrate is transparency carrier (6) or opaque substrate (5).
3. efficient non-little lamination solar cell according to claim 2, it is characterized in that: described transparency carrier (6) is phototropic face, has successively transparency conducting layer (4), top battery p layer (33) and the top battery obsorbing layer (32) of deposition on the transparency carrier (6); Has the cylindrical cavity (34) that etching forms on the described top battery obsorbing layer (32); Described top battery n layer (31), end battery p layer (23), end battery obsorbing layer (22), end battery n layer (21) and back electrode (1) are deposited on the top battery obsorbing layer (32) successively.
4. efficient non-little lamination solar cell according to claim 2, it is characterized in that: described opaque substrate (5) is shady face, has successively back electrode (1), end battery n layer (21) and the end battery obsorbing layer (22) of deposition on the opaque substrate (5); Has the columnar protrusions (24) that etching forms on the battery obsorbing layer of the described end (22); Battery p layer of the described end (23), top battery n layer (31), top battery obsorbing layer (32), top battery p layer (33) and transparency conducting layer (4) are deposited on the end battery obsorbing layer (22) successively.
5. according to claim 3 or 4 described efficient non-little lamination solar cells, it is characterized in that: described top battery n layer (31) is comprised of nanocrystalline SiOx:H or the SiNx:H of phosphorus doping.
6. efficient non-little lamination solar cell according to claim 5, it is characterized in that: described transparency conducting layer (4) can be FTO or ITO or BZO or AZO or Graphene.
7. efficient non-little lamination solar cell according to claim 4, it is characterized in that: described opaque substrate (5) can be at the bottom of the stainless steel lining.
8. efficient non-little lamination solar cell according to claim 3, it is characterized in that: described transparency carrier (6) can be simple glass or toughened glass or ultra-clear glasses or flexible transparent substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203885060U CN202917528U (en) | 2012-08-07 | 2012-08-07 | High-efficiency non-micro-laminated solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203885060U CN202917528U (en) | 2012-08-07 | 2012-08-07 | High-efficiency non-micro-laminated solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202917528U true CN202917528U (en) | 2013-05-01 |
Family
ID=48165812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012203885060U Expired - Lifetime CN202917528U (en) | 2012-08-07 | 2012-08-07 | High-efficiency non-micro-laminated solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202917528U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579402A (en) * | 2012-08-07 | 2014-02-12 | 江苏武进汉能光伏有限公司 | Efficient non-microcrystallite-stacking solar cell |
-
2012
- 2012-08-07 CN CN2012203885060U patent/CN202917528U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579402A (en) * | 2012-08-07 | 2014-02-12 | 江苏武进汉能光伏有限公司 | Efficient non-microcrystallite-stacking solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110289332B (en) | Preparation method and structure of laminated battery | |
| CN102709347A (en) | Heterojunction solar cell with buried grid structure | |
| CN102856425A (en) | Method for manufacturing soft silicon-based thin film solar cell integrated component | |
| CN102332499B (en) | Method for utilizing microparticles to produce double-textured transparent electrode | |
| CN101882652A (en) | Preparation process of amorphous silicon film solar battery based on laser etched and crystallized optical film layer | |
| CN103296145A (en) | Photonic crystal back reflector provided with adjustable forbidden band and applied to silicon-based thin-film solar cell | |
| CN109037361A (en) | A kind of high efficiency cadmium telluride diaphragm solar battery | |
| CN108172640A (en) | A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof | |
| CN102569479A (en) | Laminated silicon base hetero-junction solar battery | |
| CN202513170U (en) | High transparency conductive film glass for thin film solar battery | |
| CN202259324U (en) | No-grid-line P type crystalline silica solar cell | |
| CN102931268A (en) | N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof | |
| CN202917528U (en) | High-efficiency non-micro-laminated solar cell | |
| CN103474518B (en) | Multi-hole pyramid anti-reflection structure preparation method and HIT solar cell preparation technology | |
| CN102938430B (en) | Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer | |
| CN101820004A (en) | Photo-electro separated solar cell back reflector | |
| CN103972313B (en) | Two-sided solar cell and manufacturing method thereof | |
| CN209880628U (en) | High-efficiency glass-based CIGS solar cell structure | |
| CN202259323U (en) | Grid line-free N-type crystalline silicon solar cell | |
| CN104465893A (en) | Transmittance film solar battery and manufacture method thereof | |
| CN103147041A (en) | Making method of transparent conductive oxide film | |
| CN203553179U (en) | Micro-nano texture of thin film solar cell | |
| CN103579402A (en) | Efficient non-microcrystallite-stacking solar cell | |
| CN203325950U (en) | Multi-band-gap double-face light-transmission solar cell | |
| CN203325919U (en) | Two-sided light transmission nanowire texture heterojunction solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Room 684, No. 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province, 213000 Patentee after: JIANGSU WUJIN HANERGY FILM SOLAR ENERGY Co.,Ltd. Address before: 213000 Room 684, 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province Patentee before: JIANGSU WUJIN HANERGY PHOTOVOLTAIC CO.,LTD. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190131 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: Room 684, No. 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province, 213000 Patentee before: JIANGSU WUJIN HANERGY FILM SOLAR ENERGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190306 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: HANERGY MOBILE ENERGY HOLDING GROUP Co.,Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130501 |
|
| CX01 | Expiry of patent term |