CN207425868U - A kind of solar cell - Google Patents
A kind of solar cell Download PDFInfo
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- CN207425868U CN207425868U CN201721613735.7U CN201721613735U CN207425868U CN 207425868 U CN207425868 U CN 207425868U CN 201721613735 U CN201721613735 U CN 201721613735U CN 207425868 U CN207425868 U CN 207425868U
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- amorphous silicon
- solar cell
- silicon oxide
- hydrogenated amorphous
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Abstract
The utility model discloses a kind of solar cells, by hydrogenated amorphous silicon oxide layer over transparent conductive layer, improve conventional monolayers structure of transparent conductive layer so that there is preferable wide band antireflective effect, optical transmittance can be effectively increased, improves the photoelectric properties of film；And the hydrogen atom in hydrogenated amorphous silicon oxide layer penetrates into transparency conducting layer in subsequent annealing process, so as to improve film conductivity, increases the short circuit current flow of battery so that the transfer efficiency of final battery is improved.
Description
Technical field
The utility model is related to photovoltaic cell manufacture field more particularly to a kind of solar cells.
Background technology
HIT (Hetero-junction with Intrinsic Thin layer) heterojunction amorphous silicon/crystal silicon solar
Battery due to its efficient transfer efficiency, more and more closed by the advantages that high stability, low-temperature coefficient, generating electricity on two sides
Note is expected to become one of following mainstream photovoltaic technology.Transparent conductive oxide ITO (tin indium oxide) is since it is in visible light wave range
High-permeability and its high conductivity, be widely used in playing the role of in HIT batteries collected current and reduce reflected light.However
The optical property and electric property of transparent conductive oxide are a pair of contradictory bodies.The raising of electrical conductivity is often carrier concentration
It improves, and carrier concentration is excessively high can influence optical transmission, this is because excessively high carrier concentration causes in infrared band
Light absorption caused by.
Therefore, it while how ensureing high conductance, also can guarantee high light permeability, be urgently to be resolved hurrily ask
Topic.
Utility model content
The purpose of this utility model is to provide a kind of solar cell, to solve the problems of the prior art, ensures higher
While electrical conductivity, high light permeability also can guarantee.
The utility model provides a kind of solar cell, and the solar cell includes being successively set on monocrystalline silicon one
Amorphous silicon layer, the transparency conducting layer of side surface, the solar cell, which further includes, sets over transparent conductive layer hydrogenated amorphous
Silicon oxide layer, the gate line electrode being embedded in the hydrogenated amorphous silicon oxide layer, and the gate line electrode and the electrically conducting transparent
Layer contact.
Preferably, the electrically conducting transparent layer thickness is 60-100nm, and the thickness of the hydrogenated amorphous silicon oxide layer is
100-130nm。
Preferably, the electrically conducting transparent layer thickness is 120-180nm, and the thickness of the hydrogenated amorphous silicon oxide layer is
100-130nm。
Preferably, the amorphous silicon layer includes the intrinsic amorphous silicon layer set gradually and n-type amorphous silicon layer, and described
Sign amorphous silicon layer is arranged on one side surface of monocrystalline silicon.
Preferably, the solar cell further includes the intrinsic amorphous silicon for being successively set on another side surface of monocrystalline silicon
Layer, p-type amorphous silicon layer, transparency conducting layer, hydrogenated amorphous silicon oxide layer.
Preferably, the transparency conducting layer is ito thin film layer.
Preferably, the refractive index of the transparency conducting layer is 2.0, the refractive index of the hydrogenated amorphous silicon oxide layer is
1.4。
Preferably, the square resistance of the gate line electrode is 10~50 Ω, thickness is 50~80nm.
Solar cell provided by the utility model by hydrogenated amorphous silicon oxide layer over transparent conductive layer, improves
Conventional monolayers structure of transparent conductive layer so that there is preferable wide band antireflective effect, optical transmittance can be effectively increased,
Improve the photoelectric properties of film；And the hydrogen atom in hydrogenated amorphous silicon oxide layer penetrates into electrically conducting transparent in subsequent annealing process
Layer, so as to improve film conductivity, increases the short circuit current flow of battery so that the transfer efficiency of final battery is improved.
Description of the drawings
Fig. 1 is the structure diagram for the solar cell that the utility model embodiment provides.
Reference sign：
1- monocrystalline silicons, 2- intrinsic amorphous silicon layers, 3-n type amorphous silicon layers, 4- transparency conducting layers,
The hydrogenated amorphous silicon oxide layers of 5-, 6-p type amorphous silicon layers, 7- gate line electrodes.
Specific embodiment
The embodiment of the utility model is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is same or like element.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and cannot be construed to the utility model
Limitation.
As shown in Figure 1, the utility model embodiment provides a kind of solar cell, the solar cell is included successively
Be arranged on amorphous silicon layer, the transparency conducting layer 4 of 1 one side surface of monocrystalline silicon, the solar cell further include be arranged on it is transparent
Hydrogenated amorphous silicon oxide layer 5 on conductive layer 4, the gate line electrode 7 being embedded in the hydrogenated amorphous silicon oxide layer 5, and it is described
Gate line electrode 7 is contacted with the transparency conducting layer 4.
Wherein, hydrogenated amorphous silicon oxide layer 5 is generally SiOx:H films；It can be with modes such as laser to hydrogenated amorphous silica
Layer 5SiOx:The structure of H carries out, except film process, subsequently using silk-screen printing gate line electrode 7, making transparency conducting layer 4 and gate line electrode
7 contacts, so as to extracted current.Preferably, the transparency conducting layer 4 is ito thin film layer.Preferably, the amorphous silicon layer
Including the intrinsic amorphous silicon layer 2 set gradually and n-type amorphous silicon layer 3, and the intrinsic amorphous silicon layer 2 is arranged on the monocrystal
1 one side surface of silicon.Preferably, the square resistance of the gate line electrode 7 is 10~50 Ω, thickness is 50~80nm.
Solar cell provided by the utility model by the hydrogenated amorphous silicon oxide layer 5 on transparency conducting layer 4, changes
Kind 4 structure of conventional monolayers transparency conducting layer so that there is preferable wide band antireflective effect, optical transmission can be effectively increased
Energy improves the photoelectric properties of film；And the hydrogen atom in hydrogenated amorphous silicon oxide layer 5 penetrated into subsequent annealing process it is transparent
Conductive layer 4 so as to improve film conductivity, increases the short circuit current flow of battery so that the transfer efficiency of final battery is improved.
Preferably, when wavelength is 632.8nm, 4 refractive index of transparency conducting layer is 2.0, hydrogenated amorphous silicon oxide layer
5SiOx:H refractive index is 1.4, and according to Film Optics principle, there are mainly two types of structures for the antireflective film of index matching：
In the utility model embodiment, scheme one：The structure of V-structure, i.e. λ/4~λ/4.Pass through PVD (Physical
Vapor Deposition) physical vaporous deposition sputtering prepares thickness as after 60-100nm transparency conducting layers 4, then in PECVD
The vapour deposition process of (Plasma Enhanced Chemical Vapor Deposition) plasma enhanced chemical prepares one
Layer thickness is 100~130nm SiOx:H films.
Scheme two：The structure of W type structures, i.e. λ/4~λ/2, PVD sputterings prepare thickness as 120nm-180 transparency conducting layers 4
Afterwards, then in pecvd a layer thickness is prepared as 100~130nm SiOx:H films.
Preferably, the solar cell further includes the intrinsic amorphous for being successively set on 1 another side surface of monocrystalline silicon
Silicon layer 2, p-type amorphous silicon layer 6, transparency conducting layer 4, hydrogenated amorphous silicon oxide layer 5.
Wherein, intrinsic amorphous silicon layer 2, p-type amorphous silicon layer 6, transparency conducting layer 4 are set in 1 another side surface of monocrystalline silicon,
As a same reason, one layer of hydrogenated amorphous silicon oxide layer 5 on transparency conducting layer 4 is set, double layer antireflection coating is integrally formed, improves light
Effective transmission, improve the short circuit current flow of battery；Film conductivity is improved simultaneously, final transformation efficiency can obtain effectively
It is promoted.
The structure, feature and effect of the utility model are described in detail based on the embodiments shown in the drawings, with
Upper described is only the preferred embodiment of the utility model, but the utility model is to limit practical range shown in drawing, it is every according to
Change that conception according to the utility model is made or the equivalent embodiment for being revised as equivalent variations, still without departing from specification and figure
When showing covered spirit, it should be within the protection scope of the present utility model.
Claims (8)
1. a kind of solar cell, the solar cell include being successively set on the amorphous silicon layer of one side surface of monocrystalline silicon,
Transparency conducting layer, which is characterized in that the solar cell further includes the hydrogenated amorphous silica set over transparent conductive layer
Layer, the gate line electrode being embedded in the hydrogenated amorphous silicon oxide layer, and the gate line electrode is contacted with the transparency conducting layer.
2. solar cell according to claim 1, which is characterized in that the electrically conducting transparent layer thickness is 60-100nm,
And the thickness of the hydrogenated amorphous silicon oxide layer is 100-130nm.
3. solar cell according to claim 1, which is characterized in that the electrically conducting transparent layer thickness is 120-180nm,
And the thickness of the hydrogenated amorphous silicon oxide layer is 100-130nm.
4. solar cell according to claim 1, which is characterized in that the amorphous silicon layer includes setting gradually intrinsic
Amorphous silicon layer and n-type amorphous silicon layer, and the intrinsic amorphous silicon layer is arranged on one side surface of monocrystalline silicon.
5. solar cell according to claim 1, which is characterized in that the solar cell, which further includes, to be successively set on
The intrinsic amorphous silicon layer of another side surface of monocrystalline silicon, p-type amorphous silicon layer, transparency conducting layer, hydrogenated amorphous silicon oxide layer.
6. solar cell according to claim 1, which is characterized in that the transparency conducting layer is ito thin film layer.
7. solar cell according to claim 1, which is characterized in that the refractive index of the transparency conducting layer is 2.0, institute
The refractive index for stating hydrogenated amorphous silicon oxide layer is 1.4.
8. according to claim 1-7 any one of them solar cells, which is characterized in that the square resistance of the gate line electrode
For 10~50 Ω, thickness is 50~80nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721613735.7U CN207425868U (en) | 2017-11-27 | 2017-11-27 | A kind of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721613735.7U CN207425868U (en) | 2017-11-27 | 2017-11-27 | A kind of solar cell |
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| Publication Number | Publication Date |
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| CN207425868U true CN207425868U (en) | 2018-05-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808314A (en) * | 2019-11-14 | 2020-02-18 | 西南石油大学 | Method for improving photoelectric performance of heterojunction solar cell |
-
2017
- 2017-11-27 CN CN201721613735.7U patent/CN207425868U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808314A (en) * | 2019-11-14 | 2020-02-18 | 西南石油大学 | Method for improving photoelectric performance of heterojunction solar cell |
| CN110808314B (en) * | 2019-11-14 | 2021-05-11 | 西南石油大学 | Method for improving photoelectric performance of heterojunction solar cell |
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Effective date of registration: 20201230 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing Economic and Technological Development Zone, No. 66 Building, No. 2 Jingyuan North Street, 7th Floor 805 Patentee before: Juntai innovation (Beijing) Technology Co.,Ltd. |