CN105762231B - It is a kind of（B、Ga）It is co-doped with the preparation method of the neutron detector of ZnO/ZnCdO/GaN junction structures - Google Patents
It is a kind of（B、Ga）It is co-doped with the preparation method of the neutron detector of ZnO/ZnCdO/GaN junction structures Download PDFInfo
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- CN105762231B CN105762231B CN201610230584.0A CN201610230584A CN105762231B CN 105762231 B CN105762231 B CN 105762231B CN 201610230584 A CN201610230584 A CN 201610230584A CN 105762231 B CN105762231 B CN 105762231B
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- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 11
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000007739 conversion coating Methods 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 9
- 230000004044 response Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
Abstract
The present invention relates to one kind（B、Ga）The preparation method of the neutron detector of ZnO/ZnCdO/GaN junction structures is co-doped with, belongs to radiation detector device manufacturing process technology field.The present invention is using radio-frequency magnetron sputter method one layer of n-type ZnCdO film of preparation in p-type GaN substrate, surface is prepared thereon again uniform, crystalline quality and good B, Ga the codope ZnO scintillator films of scintillation properties, so as to provide method to realize that a kind of B, Ga are co-doped with the neutron detectors of ZnO scintillator films/GaN heterojunction structures.The present invention is the neutron detector that a kind of B, Ga are co-doped with ZnO scintillator films/ZnCdO films/GaN heterojunction structures.Its feature is, neutron is changed into by α particles as neutron conversion coating using B, Ga codope ZnO scintillator films, α particles further excite B, Ga codope ZnO scintillator films to produce ultraviolet, ZnCdO film layers are recycled to absorb ultraviolet, opto-electronic conversion is carried out, so as to realize neutron detection.
Description
Technical field
The present invention relates to one kind（B、Ga）The preparation method of the neutron detector of ZnO/ZnCdO/GaN junction structures is co-doped with,
Belong to radiation detector device manufacturing process technology field.
Background technology
As public safety, nuclear industry, scientific research and Aero-Space etc. need the field for carrying out radiation monitoring constantly to expand
Greatly, and monitoring breadth and depth requirement variation, low-power consumption, quick response, portable, cost performance it is high new neutron detection
Device turns into one of important development direction.In these requirements, the either BF based on gas compartment at present3With3He proportional detectors,
It is all difficult preferable meet to be also based on neutron detector of boron coated ion chamber etc..Other such as scintillator neutron detectors, due to dodging
The device such as photomultiplier of bright body and detection light（PMT）Separate each other, and PMT is also more complicated in itself so that cumulative volume is larger.
Therefore solid neutron transition material and solids detector are used（Such as semiconductor detector）And it is integrated be research emphasis it
One.Wherein semiconductor detector because technique is simple, low in energy consumption, small volume, high energy resolution the features such as, in high-performance, micro-
There are advantage and bright prospects in type, low-power consumption neutron detector.
ZnO is important-Compound semiconductor, wide direct band gap（3.37eV at room temperature）, high exciton binding energy
（60MeV）, highly anti-radiation performance（It is only second to diamond）, it is high electromechanical coupling factor, high electron mobility, cheap, nontoxic
Deng these excellent properties make it have extensive purposes, such as transparency electrode, ultraviolet light detector etc..And pass through doping（Such as
Ga, In etc.）ZnO also has excellent scintillation properties, is the preferred flash detection material of α particles in D-T accelerators for neutron production.With biography
System inorganic scintillator compare, ZnO scintillators except with high light output in addition to, be also the die-away time found so far it is most short
Scintillation material, this is advantageously implemented the high-speed response of device.ZnO crystal has partly leads better than GaN, Si, GaAs and CdS etc.
The radiation resistance of body material, can be applied to the environment of high radiation, such as space, nuclear power station.At present, on ZnO neutron detections
The preparation of device there is no report.
Film preparation is simple compared to single crystal preparation technique, and batch growth feasibility is high, and the flatness of the response based on film is suitable
Close the flat panel detector for preparing large area.ZnO film can be prepared by chemical method, can also be obtained by physical method.At these
In method for manufacturing thin film, magnetron sputtering method is a kind of more conventional method, and this method cost is low, speed is fast, quality good, is fitted
For large-area film deposition.
The present invention is to prepare boron gallium（B、Ga）Be co-doped with ZnO scintillator films/Cd it is ZnO thin film doped/GaN junction structures in
Sub- detector.In the device architecture, B, Ga are co-doped with ZnO scintillator films as the neutron conversion layer material in the neutron detection first step
Material, the conversion layer is utilized10B(n,a)7Neutron is converted to a particles by Li reactions, while the conversion layer is in itself as a kind of flicker material
Material a it is particle excitated it is lower can send the ultraviolet light of specific wavelength, and the wavelength of ultraviolet light is between 385-390nm, it is therefore desirable to
In boron gallium（B、Ga）One layer of Cd of regrowth on ZnO scintillator films is co-doped with ZnO thin film doped for absorbing ultraviolet light, so that indirectly
Realize the detection to neutron.The all solid state neutron detector of the junction type is ground for public safety, military affairs, nuclear industry, nuclear medicine, science
Study carefully and the field radiation monitoring such as Aero-Space, security protection in terms of significant and application prospect.
The content of the invention
The present invention is thin using one layer of n-type Cd doping ZnO (ZnCdO) of radio-frequency magnetron sputter method preparation in p-type GaN substrate
Film, then prepare surface uniformly thereon, crystalline quality and good B, Ga the codope ZnO scintillator films of scintillation properties, so that
Method is provided to realize that a kind of B, Ga are co-doped with the neutron detectors of ZnO scintillator films/GaN heterojunction structures.
To reach above-mentioned purpose, the present invention is adopted the following technical scheme that：
The present invention is a kind of preparation method of n-BGZO/n- ZnCdO/p-GaN heterojunction type neutron detectors, its feature
It is that this method includes following process and step：
（a）The cleaning of GaN substrate：Before the deposition, substrate deionized water, acetone and ethanol are cleaned by ultrasonic 10 respectively
~20 minutes, the impurity and organic matter on surface are washed away, high-purity N is used2It is put into after air-blowing is dry in magnetron sputtering reaction cavity；
（b）The preparation of ZnCdO film layers：ZnO ceramic targets using Cd dopings 1-10wt% pass through rf magnetron sputtering
Method deposits ZnCdO films in p-type GaN substrate, and sputtering atmosphere is argon gas, by silicon to 100 ~ 500 DEG C, sputtering pressure
1~6mTorr；50 ~ 300W of sputtering power, pre-sputtering 5-15 minutes（min）Afterwards, open after 30 ~ 200min of baffle plate formal sputtering, it is thin
0.2 ~ 1mm of film thickness；
（c）B, Ga are co-doped with the preparation of ZnO/ZnCdO/GaN heterojunction structure neutron detectors：Adopted in ZnCdO film layers
B, Ga are prepared with magnetron sputtering method and is co-doped with ZnO scintillator films, using 1% ~ 30wt% of B dopings, Ga dopings 1% ~ 10wt%
ZnO ceramic targets are target, and sputtering atmosphere is argon gas, by silicon to 100 ~ 500 DEG C, 1 ~ 20mTorr of sputtering pressure；Sputter work(
After 50 ~ 300W of rate, pre-sputtering 1-15min, open after 30 ~ 200min of baffle plate formal sputtering, 0.1 ~ 2mm of film thickness；
（d）It is prepared by electrode：ZnO film upper surface is co-doped with using mask in above-mentioned GaN substrate and B, Ga respectively to use
Evaporation, electron beam evaporation or sputtering method prepare the Ti/Al clad metal electrodes of 50-500nm thickness, then 100- in a vacuum
800 °C of annealing 1-30 minutes is to form good Ohmic contact.
Mechanism for the present invention, feature and advantage
The present invention is the neutron detection that a kind of B, Ga are co-doped with ZnO scintillator films/ZnCdO films/GaN heterojunction structures
Device.Its feature is, neutron is changed into α particles, α as neutron conversion coating using B, Ga codope ZnO scintillator films
Son further excites B, Ga codope ZnO scintillator films to produce ultraviolet, recycles ZnCdO film layers to absorb ultraviolet, enters
Row opto-electronic conversion, so as to realize neutron detection.
Compared with the existing technology, the present invention has following remarkable advantage：
（1）For gas neutron detector widely used at present, the invention is all solid state neutron detection device,
With small volume, simple in construction, energy consumption be low, portable and the low feature of cost.
（2）Junction detector is compared relatively fast with resistor-type explorer response speed.
（3）ZnO scintillators, which have, is currently known most short die-away time, is only second to the anti-radiation performance of diamond, because
This can be operated under the radiation condition of high flux, high-energy using ZnO as material for detector, can also realize that ultrahigh speed is rung
The neutron detector answered.
（4）GaN and ZnO lattice constant is closer to, and lattice mismatch is small, can prepare the junction type detection of excellent performance
Device.
Brief description of the drawings
Fig. 1 is neutron detector structure and principle schematic of the invention.
Embodiment
After now the specific embodiment of the present invention is described in.
Embodiment
The preparation process and step of the present embodiment are as follows：
（a）The cleaning of GaN substrate：Before the deposition, by GaN substrate deionized water, acetone and ethanol of the thickness for 2mm
It is cleaned by ultrasonic 10~20 minutes respectively, washes away the impurity and organic matter on surface, use high-purity N2It is anti-that magnetron sputtering is put into after air-blowing is dry
Answer in cavity.
（b）The preparation of ZnCdO film layers：The side that rf magnetron sputtering is passed through using Cd dopings 10wt% ZnO ceramic targets
Method deposits ZnCdO films in p-type GaN substrate, and sputtering atmosphere is argon gas, and substrate heating temperature is 200 DEG C, sputtering pressure
6mTorr, sputtering power 150W, sputtering time 200min, film thickness about 1mm.
（c）B, Ga are co-doped with the preparation of ZnO/ZnCdO/GaN heterojunction structure neutron detectors：Adopted in ZnCdO film layers
B, Ga are prepared with magnetron sputtering method and is co-doped with ZnO scintillator films, using B doping 30wt%, Ga dopings 10wt% ZnO ceramics
Target is target, and sputtering atmosphere is argon gas, by silicon to 200 DEG C, sputtering pressure 6mTorr；Sputtering power 150W, pre-sputtering
After 10min, open after baffle plate formal sputtering 120min, film thickness 0.7mm.
（d）It is prepared by electrode：Interdigital electrode mask plate is made by photoetching process etc., using mask respectively in above-mentioned GaN
Substrate and B, Ga are co-doped with ZnO film upper surface and prepare the thick Ti/Al of 100nm using evaporation, electron beam evaporation or sputtering method
Clad metal electrode, then in a vacuum 300 °C of annealing 1 minute to form good Ohmic contact.
Use252Cf neutron sources are co-doped with ZnO/ZnCdO/GaN heterojunction structure neutron detectors to B, Ga for preparing and entered
Row irradiation, by its I-E characteristic before and after neutron irradiation it was found that, the device has obvious sound to neutron source
Should, under -5V voltages, device photoelectric stream/dark current is more than 5.
Claims (1)
1. it is a kind of（B、Ga）It is co-doped with the preparation method of the neutron detector of ZnO/ZnCdO/GaN junction structures, it is characterised in that tool
There is following technical process and step：
（a）The cleaning of GaN substrate：Before the deposition, substrate deionized water, acetone and ethanol are cleaned by ultrasonic 10~20 respectively
Minute, the impurity and organic matter on surface are washed away, is put into after being done with the air-blowing of high-purity N 2 in magnetron sputtering reaction cavity；
（b）The preparation of ZnCdO film layers：The method that rf magnetron sputtering is passed through using Cd dopings 1-10wt% ZnO ceramic targets
ZnCdO films are deposited in p-type GaN substrate, sputtering atmosphere is argon gas, by silicon to 100 ~ 500 DEG C, sputtering pressure 1 ~
6mTorr；50 ~ 300W of sputtering power, pre-sputtering 5-15 minutes（min）Afterwards, open after 30 ~ 200min of baffle plate formal sputtering, film
0.2 ~ 1mm of thickness；
（c）B, Ga are co-doped with the preparation of ZnO/ZnCdO/GaN heterojunction structure neutron detectors：Magnetic is used in ZnCdO film layers
Control sputtering method prepares B, Ga and is co-doped with ZnO scintillator films, is made pottery using 1% ~ 30wt% of B dopings, 1% ~ 10wt% of Ga dopings ZnO
Porcelain target is target, and sputtering atmosphere is argon gas, by silicon to 100 ~ 500 DEG C, 1 ~ 20mTorr of sputtering pressure；Sputtering power 50 ~
After 300W, pre-sputtering 1-15min, open after 30 ~ 200min of baffle plate formal sputtering, 0.1 ~ 2mm of film thickness；
（d）It is prepared by electrode：Using mask respectively above-mentioned GaN substrate and B, Ga be co-doped with ZnO film upper surface using evaporation,
Or electron beam evaporation or sputtering method prepare the thick Ti/Al clad metal electrodes of 50-500nm, then in a vacuum 100-800 °C
Annealing 1-30 minutes is to form good Ohmic contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610230584.0A CN105762231B (en) | 2016-04-14 | 2016-04-14 | It is a kind of（B、Ga）It is co-doped with the preparation method of the neutron detector of ZnO/ZnCdO/GaN junction structures |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610230584.0A CN105762231B (en) | 2016-04-14 | 2016-04-14 | It is a kind of（B、Ga）It is co-doped with the preparation method of the neutron detector of ZnO/ZnCdO/GaN junction structures |
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| CN105762231A CN105762231A (en) | 2016-07-13 |
| CN105762231B true CN105762231B (en) | 2017-09-26 |
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| CN108249910B (en) * | 2018-01-24 | 2020-05-12 | 东北大学 | Preparation method of Ce and/or Pr doped rare earth garnet transparent scintillating material |
| CN112462412B (en) * | 2020-10-28 | 2023-01-03 | 郑州工程技术学院 | GaN neutron detector 10 B 4 Preparation method of C neutron conversion layer |
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| US7048872B2 (en) * | 2002-09-16 | 2006-05-23 | The Regents Of The University Of California | Codoped direct-gap semiconductor scintillators |
| US9379271B2 (en) * | 2013-05-24 | 2016-06-28 | The United States Of America As Represented By The Secretary Of The Army | Variable range photodetector and method thereof |
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