CN109244173B - Self-powered dual-waveband ultraviolet photoelectric detector and preparation method thereof - Google Patents
Self-powered dual-waveband ultraviolet photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
The inventionRelates to a self-powered dual-waveband ultraviolet photoelectric detector and a preparation method thereof, wherein the preparation method comprises the following steps: selecting a substrate; growing a light absorption layer on the surface of the substrate; and forming asymmetrical interdigital electrodes on the surface of the light absorption layer. The self-powered dual-waveband ultraviolet photoelectric detector provided by the invention has the following characteristics (In)xGa1‑x)2O3A light absorbing layer of material, In the case of different In composition, (In)xGa1‑x)2O3The optical band gap of the material is changed (4.9-8.9 eV), and under the condition of high In component, (In)xGa1‑x)2O3The materials are subjected to phase separation to generate two optical band gaps, and two ultraviolet spectral ranges are induced, so that the detection of a dual-band optical signal is realized; the potential barrier heights of the asymmetrical interdigital electrodes are different, so that the self-powered characteristic of the device is realized.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a self-powered dual-waveband ultraviolet photoelectric detector and a preparation method thereof.
Background
The ultraviolet detection technology is a dual-purpose photoelectric detection technology for military and civil use developed after infrared and laser detection technologies. Due to absorption and scattering of atmospheric molecules and atoms, ultraviolet light, particularly in a solar blind waveband with the wavelength less than 300nm, is strongly inhibited from propagating in the atmosphere, so that background ultraviolet light on the earth surface is weak, and background interference of the waveband is small. The ultraviolet detector can detect a large amount of ultraviolet radiation released from tail flames or feather flames of flying targets such as airplanes, rockets, missiles and the like, so that the ultraviolet detector can be used for space defense and alarm systems in military aspects; the method can be used for fire monitoring, automobile engine monitoring, petroleum industry and environmental pollution monitoring and the like in the civil aspect, and has wide application prospect.
Ultraviolet imaging detectors can be broadly divided into two categories: photocathode detectors and semiconductor detectors. The photocathode detector mainly comprises an ultraviolet vacuum diode, a separation type ultraviolet photomultiplier, an imaging type ultraviolet image converter, an ultraviolet intensifier, an ultraviolet camera tube and the like. The photomultiplier has been successfully applied to ultraviolet detection due to high detection sensitivity, but an optical filter is required due to large volume, large power consumption and high working voltage, so that the formed ultraviolet imaging system has large volume and high power consumption and cost. Semiconductor detectors are another important direction in the development of ultraviolet imaging type detectors. Compared with a photocathode detector, the semiconductor ultraviolet detector is compact, firm, high in quantum efficiency, low in driving voltage and high in stability in a high-temperature environment.
However, most of the existing photoelectric detection devices can only detect signals in a single spectral response range; however, for optical wavelength division multiplexing, multispectral instrumentation, laser warning, etc., there is a need to be able to detect optical signals in multiple spectral response ranges simultaneously.
Therefore, the problem that the existing photoelectric detector cannot realize detection and self-power supply of the dual-waveband optical signal is solved, and the development of the multispectral response range and self-power supply ultraviolet photoelectric detector has important significance for detecting the multi-waveband signal in the future.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a self-powered dual-band ultraviolet photoelectric detection device and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a preparation method of a self-powered dual-waveband ultraviolet photoelectric detector, which comprises the following steps:
selecting a substrate;
growing a light absorption layer on the surface of the substrate;
and forming an asymmetric interdigital electrode on the surface of the light absorption layer.
In one embodiment of the present invention, forming a light absorbing layer on the surface of the substrate includes:
introducing oxygen and argon as sputtering gases into the sputtering cavity;
sputtering (In) on the surface of the substrate by using a magnetron co-sputtering process under the preset magnetron co-sputtering conditionxGa1-x)2O3Forming the light absorption layer of a material;
and carrying out in-situ annealing on the light absorption layer under a preset annealing condition.
In one embodiment of the invention, the purity of the oxygen and the argon in percentage by mass is 99.999%, and the flow rate of the oxygen is 5cm3Per second, the argon flow is 20cm3In seconds.
In one embodiment of the present invention, Ga having a mass purity of greater than 99.99% is selected2O3Target material and In2O3The target material is used as a sputtering target material; the preset magnetron co-sputtering conditions are as follows: the substrate temperature is 610 + -5 deg.C and the vacuum degree is 4 × 10-4Pa-6×10-4Pa, the Ga2O3The sputtering power of the target is 100W, and In2O3The sputtering power of the target is 50W-90W, the sputtering target base distance is 5cm, and the sputtering time is 1 hour.
In one embodiment of the present invention, forming an asymmetric interdigital electrode on a surface of the light absorbing layer includes:
introducing argon as a sputtering gas into the sputtering cavity;
under the preset magnetron sputtering condition, an asymmetric interdigital electrode mask plate is adopted, and the surface of the light absorption layer is sputtered with an Au material by a magnetron sputtering process to form the asymmetric interdigital electrode.
In one embodiment of the invention, the argon gas has a purity of 99.999 percent by mass and the argon gas flow is 20cm3In seconds.
In one embodiment of the invention, an Au target with the mass ratio purity of more than 99.99% is selected as a sputtering target; the preset magnetron sputtering conditions are as follows: vacuum degree of 4X 10-4Pa-6×10-4Pa, sputtering target base distance of 5cm and working current of 1A.
In an embodiment of the invention, a self-powered dual-band ultraviolet photoelectric detection device comprises a substrate, a light absorption layer and interdigital electrodes, wherein the substrate is prepared by the preparation method described in the embodiment, the interdigital electrodes are in an asymmetric structure and comprise a first Au electrode and a second Au electrode which have different finger widths.
In one embodiment of the present invention, the thickness of the substrate (1) is 200-600 μm, the thickness of the light absorption layer (2) is 300 + -5 nm, and the thickness of the interdigital electrode (3) is 120 + -5 nm.
In one embodiment of the present invention, the finger length of the first Au electrode (31) and the second Au electrode (32) is 2800 μm, the finger pitch is 200 μm, the finger width of the first Au electrode (31) is 400 μm, and the finger width of the second Au electrode (32) is 200 μm.
Compared with the prior art, the invention has the beneficial effects that:
1. the self-powered dual-waveband ultraviolet photoelectric detection device prepared by the preparation method provided by the invention has the characteristics of (In)xGa1-x)2O3Ultraviolet light absorption layer formed of material, In the case of different In compositions, (In)xGa1-x)2O3The optical band gap of the material is changed (4.9-8.9 eV), and under the condition of high In component, (In)xGa1-x)2O3The materials are subjected to phase separation to generate two optical band gaps, and two ultraviolet spectral ranges are induced, so that the detection of a dual-band optical signal is realized;
2. the self-powered dual-band ultraviolet photoelectric detection device prepared by the preparation method provided by the invention uses the interdigital electrode mask plate to prepare and form asymmetric interdigital electrodes during preparation, so that potential barrier heights of the interdigital electrodes are different, potential difference is generated, kinetic energy is provided for free electrons, and the self-powered characteristic of the device is realized.
Drawings
Fig. 1 is a structural diagram of an apparatus for manufacturing a self-powered dual-band ultraviolet photoelectric detector according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for manufacturing a self-powered dual-band ultraviolet photoelectric detection device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an interdigital electrode mask plate according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional structure diagram of a self-powered dual-band ultraviolet photoelectric detection device according to an embodiment of the present invention.
In the figure, 1, a substrate; 2. a light absorbing layer; 3. an interdigital electrode; 31. a first Au electrode; 32. a second Au electrode; 4. a radio frequency power supply; 5. a target container; 6. a target material baffle plate; 7. an air inlet; 8. an air extraction pipeline; 9. a substrate baffle; 10. a tray; 11. a substrate heating plate; 12. a rotating machine; 13. a sputtering chamber.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a structural diagram of an apparatus for manufacturing a self-powered dual-band ultraviolet photoelectric detector according to an embodiment of the present invention. As shown in the figure, the preparation apparatus includes a radio frequency power supply 4, two target containers 5, two target baffles 6, a gas inlet 7, a gas exhaust duct 8, a substrate baffle 9, a tray 10, a substrate heating plate 11, a rotator 12, and a sputtering chamber 13. A radio frequency power supply 4 is connected to the target material container 5 through the sputtering chamber 13 for providing a power supply for the sputtering target material. The target container 5 comprises a symmetrical Ga container2O3Target material and In2O3Two target containers of the target, two target baffle plates 6 are respectively arranged above the two target containers. The gas inlet 7 can be provided with a plurality of gas pipelines respectively filled with different gases, and in the embodiment, the gas inlet 7 can be filled with sputtering gas oxygen and argon gas at the same time. The evacuation line 8 is connected to a vacuum system for evacuating the sputtering chamber 13. The lower end of the rotator 12 is sequentially connected with the substrate heating plate 11 and the tray 10, so that the substrate heating plate 11 and the tray 10 can rotate simultaneously, and the uniformity of a deposited film on the surface of the substrate in the sputtering process is ensured.
Referring to fig. 2, fig. 2 is a schematic flow chart of a method for manufacturing a self-powered dual-band ultraviolet photoelectric detector. A preparation method of a self-powered dual-waveband ultraviolet photoelectric detector specifically comprises the following steps:
s1, selecting a substrate;
according to the embodiment of the invention, the C-plane sapphire substrate with double-side polishing and the thickness of 200-600 μm is selected, and preferably, the thickness of the C-plane sapphire substrate is 500 μm.
The reason why sapphire is used as the substrate: firstly, the production technology of the sapphire substrate is mature, and the quality of devices is good; secondly, the sapphire has good stability and can be applied to the high-temperature growth process; finally, sapphire is mechanically strong and easy to handle and clean.
The C surface refers to the [0001] crystal orientation of the sapphire, the process for growing the sapphire along the [0001] crystal orientation is mature, the cost is relatively low, and the physical and chemical properties are stable.
S2, growing a light absorption layer on the surface of the substrate;
specifically, step S2 includes:
s21, introducing oxygen and argon gas as sputtering gases into the sputtering cavity at the same time;
wherein, the purity of oxygen and argon in percentage by mass is 99.999 percent, and the flow of oxygen is 5cm3A/second; the argon flow is 20cm3In seconds.
S22, sputtering (In) on the surface of the substrate by using a magnetron co-sputtering process under the preset magnetron co-sputtering conditionxGa1-x)2O3Forming a light absorbing layer of a material;
during magnetron co-sputtering, Ga with the mass ratio purity of more than 99.99 percent is selected2O3Target material and In2O3The target material is used as a sputtering target material.
The magnetron co-sputtering process is to sputter Ga simultaneously under certain magnetron co-sputtering conditions2O3Target material and In2O3A target material.
The magnetron co-sputtering conditions include: substrate temperature, degree of vacuum, Ga2O3Sputtering power of target material, In2O3Target sputtering power, sputtering target base distance and sputtering duration. Wherein the sputtering target base distance refers to the distance between the sputtering target and the substrate. The substrate temperature is 610 + -5 deg.C, preferably 610 deg.C; vacuum degree of 4X 10-4Pa-6×10-4Pa, preferably 4.0X 10-4Pa；Ga2O3The sputtering power of the target is 100W; the sputtering target base distance is 5 cm; the sputtering time was 1 hour. By setting different In2O3Sputtering power of the target material to obtain (In) with different In componentsxGa1-x)2O3A material. When In2O3(In) generated when the sputtering power of the target is adjusted within a range of 50W to 90WxGa1-x)2O3The value of x in the material is in the range of 0.58-0.76. For example, when In2O3When the sputtering power of the target is 60W, x is 0.51; when In2O3When the sputtering power of the target is 80W, x is 0.67; when In2O3When the target sputtering power was 90W, x was 0.71.
And S23, carrying out in-situ annealing on the light absorption layer under the preset annealing condition.
The annealing conditions comprise annealing temperature and annealing time, wherein the annealing temperature is 750 +/-5 ℃, and preferably 750 ℃; the annealing time was 2 hours.
And S3, forming an asymmetric interdigital electrode on the surface of the light absorption layer.
Specifically, step S3 includes:
s31, introducing argon gas serving as sputtering gas into the sputtering cavity;
wherein, the purity of the argon gas in percentage by mass is 99.999 percent, and the flow of the argon gas is 20cm3In seconds.
And S32, under the preset magnetron sputtering condition, adopting an asymmetric interdigital electrode mask plate, and sputtering Au material on the surface of the light absorption layer by utilizing a magnetron sputtering process to prepare and form an asymmetric interdigital electrode.
During magnetron sputtering, an Au target with the mass ratio purity of more than 99.99 percent is selected as a sputtering target.
The magnetron sputtering process is characterized in that electrons run spirally near the surface of a target by utilizing the interaction of a magnetic field and an electric field, so that the probability of generating ions by the impact of the electrons on argon is increased. The generated ions collide with the target surface under the action of the electric field so as to sputter the target material.
The magnetron sputtering conditions include: vacuum degree, sputtering target base distance and working current. Wherein the content of the first and second substances,the sputtering target base distance refers to the distance between the sputtering target and the substrate. Vacuum degree of 4X 10-4Pa-6×10-4Pa, preferably 4.0X 10-4Pa, sputtering target base distance of 5cm and working current of 1A.
Fig. 3 is a schematic structural diagram of an interdigital electrode mask plate according to an embodiment of the present invention.
The shape parameters of the interdigital electrode mask plate correspond to the interdigital electrodes, and the method specifically comprises the following steps: the finger length L is 2800 μm, the first finger width d1 is 400 μm, the second finger width d2 is 200 μm, and the finger pitch W is 200 μm.
In a specific embodiment, the two wide and narrow electrode materials of the interdigital electrode are the same; the width of the electrode is determined according to the width of the interdigital electrode, the electrode with the width is called as a wide electrode, and the electrode with the width is called as a narrow electrode.
Through the steps S1-S3, the self-powered dual-waveband ultraviolet photoelectric detector is prepared.
Example two
Referring to fig. 4, fig. 4 is a schematic cross-sectional structure view of a self-powered dual-band ultraviolet photoelectric detection device according to an embodiment of the present invention. As shown in fig. 4, the self-powered dual-band ultraviolet photoelectric detector includes a substrate 1, a light absorption layer 2, and interdigital electrodes 3. The substrate 1, the light absorption layer 2 and the interdigital electrode 3 are vertically distributed from bottom to top in sequence to form a multilayer structure, and the self-powered dual-waveband ultraviolet photoelectric detector is formed.
Wherein, the substrate 1 is a double-sided polished C-surface sapphire substrate with the thickness of 200-600 μm; the light absorption layer 2 is composed of (In)xGa1-x)2O3Forming a material with the thickness of 300 +/-5 nm; the interdigital electrode 3 has an asymmetric structure, has a thickness of 120 +/-5 nm, and comprises a first Au electrode 31 and a second Au electrode 32 with different finger widths, wherein the finger length of the first Au electrode 31 and the finger distance of the second Au electrode 32 are 2800 mu m and 200 mu m, the finger width of the first Au electrode 31 is 400 mu m, and the finger width of the second Au electrode 32 is 200 mu m.
The self-powered dual-band ultraviolet photoelectric detection device prepared by the method provided by the embodiment of the invention has the characteristics of (In)xGa1-x)2O3Light absorption formed by materialA collector layer, In the case of different In compositions, (In)xGa1-x)2O3The optical band gap of the material is changed (4.9-8.9 eV), and under the condition of high In component, (In)xGa1-x)2O3The materials are subjected to phase separation to generate two optical band gaps, and two ultraviolet spectral ranges are induced to realize the detection of the dual-band optical signal; when the self-powered dual-band ultraviolet photoelectric detector is prepared, an asymmetric interdigital electrode is prepared and formed by using an interdigital electrode mask plate, so that the heights of ohmic contact and Schottky contact barriers of the asymmetric interdigital electrode are different, a potential difference is generated, kinetic energy is provided for free electrons, and the self-powered characteristic of the device is realized.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A preparation method of a self-powered dual-waveband ultraviolet photoelectric detector is characterized by comprising the following steps:
selecting a substrate;
growing a light absorption layer on the surface of the substrate;
the step of forming a light absorbing layer on the surface of the substrate includes:
introducing oxygen and argon as sputtering gases into the sputtering cavity;
sputtering (In) on the surface of the substrate by using a magnetron co-sputtering process under the preset magnetron co-sputtering conditionxGa1-x)2O3The light absorption layer is formed by materials, and the value range of x is 0.58-0.76;
in-situ annealing the light absorption layer under a preset annealing condition;
and forming asymmetric interdigital electrodes on the surface of the light absorption layer, wherein the asymmetric interdigital electrodes comprise a first Au electrode and a second Au electrode, the finger length of the first Au electrode and the finger length of the second Au electrode are 2800 mu m, the finger distance of the first Au electrode and the finger distance of the second Au electrode are 200 mu m, the finger width of the first Au electrode is 400 mu m, and the finger width of the second Au electrode is 200 mu m.
2. The method of claim 1, wherein the oxygen and argon are both 99.999% pure by mass, and the oxygen flow is 5cm3Per second, the argon flow is 20cm3In seconds.
3. The method of claim 1 wherein Ga having a mass purity greater than 99.99% is selected for use in the self-powered dual band uv photodetector device2O3Target material and In2O3The target material is used as a sputtering target material; the preset magnetron co-sputtering conditions are as follows: the substrate temperature is 610 + -5 deg.C and the vacuum degree is 4 × 10-4Pa-6×10-4Pa, the Ga2O3The sputtering power of the target is 100W, and In2O3The sputtering power of the target is 50W-90W, the sputtering target base distance is 5cm, and the sputtering time is 1 hour.
4. The method for manufacturing a self-powered dual-band ultraviolet photoelectric detector as claimed in claim 1, wherein the step of forming asymmetric interdigital electrodes on the surface of the light absorption layer comprises:
introducing argon as a sputtering gas into the sputtering cavity;
under the preset magnetron sputtering condition, an asymmetric interdigital electrode mask plate is adopted, and the surface of the light absorption layer is sputtered with an Au material by a magnetron sputtering process to form the asymmetric interdigital electrode.
5. The method for manufacturing a self-powered dual-band ultraviolet photoelectric detector as claimed in claim 4, wherein the argon gas has a purity of 99.999% by mass and a flow rate of 20cm3In seconds.
6. The method for preparing the self-powered dual-band ultraviolet photoelectric detector as claimed in claim 4, wherein an Au target with a mass specific purity of more than 99.99% is selected as a sputtering target; the preset magnetron sputtering conditions are as follows: vacuum degree of 4X 10-4Pa-6×10-4Pa, sputtering target base distance of 5cm and working current of 1A.
7. A self-powered dual-band ultraviolet photoelectric detector, characterized by comprising a substrate (1) made by the preparation method of any one of claims 1 to 6, a light absorption layer (2), and interdigital electrodes (3); the interdigital electrode (3) is in an asymmetric structure and comprises a first Au electrode (31) and a second Au electrode (32) with different finger widths.
8. The self-powered dual-band ultraviolet photoelectric detector as claimed in claim 7, wherein the thickness of the substrate (1) is 200 μm and 600 μm, the thickness of the light absorption layer (2) is 300 ± 5nm, and the thickness of the interdigital electrode (3) is 120 ± 5 nm.
9. The self-powered dual-band ultraviolet photodetector device as claimed in claim 7, characterized in that said first Au electrode (31) and said second Au electrode (32) have a finger length of 2800 μm and a finger pitch of 200 μm, said first Au electrode (31) has a finger width of 400 μm, and said second Au electrode (32) has a finger width of 200 μm.
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| CN111613694A (en) * | 2020-05-26 | 2020-09-01 | 西安邮电大学 | Method for preparing multiband gallium oxide-based ultraviolet photoelectric detector array |
| CN112652722B (en) * | 2020-12-29 | 2023-10-17 | 哈尔滨师范大学 | Self-powered dual-function photoelectric detector and preparation method thereof |
| CN115000244B (en) * | 2022-05-31 | 2023-09-26 | 北京工业大学 | Manufacturing method of high-performance self-driven GaN nanowire ultraviolet detector |
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| CN100334739C (en) * | 2005-04-27 | 2007-08-29 | 中国科学院上海技术物理研究所 | Ultraviolet dual wave-band gallium nitride detector |
| JP2009044019A (en) * | 2007-08-10 | 2009-02-26 | Nippon Light Metal Co Ltd | Method of manufacturing gallium oxide-indium oxide mixed crystal, and light-sensitive element using manufactured mixed crystal |
| CN103943720A (en) * | 2014-03-27 | 2014-07-23 | 中国科学院长春光学精密机械与物理研究所 | Self-driven oxygen zinc magnesium ultraviolet detector and preparing method thereof |
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| CN1587996A (en) * | 2004-08-17 | 2005-03-02 | 浙江大学 | Photoconductive type ultraviolet detector |
| CN101517384A (en) * | 2006-10-06 | 2009-08-26 | 株式会社资生堂 | Ultraviolet ray detection device and ultraviolet ray protection effect evaluating device |
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