CN106409963B - A kind of Zn:Ga2O3Film base MSM structure solar blind UV electric explorers and preparation method thereof - Google Patents
A kind of Zn:Ga2O3Film base MSM structure solar blind UV electric explorers and preparation method thereof Download PDFInfo
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- CN106409963B CN106409963B CN201610837110.2A CN201610837110A CN106409963B CN 106409963 B CN106409963 B CN 106409963B CN 201610837110 A CN201610837110 A CN 201610837110A CN 106409963 B CN106409963 B CN 106409963B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 63
- 238000004544 sputter deposition Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 241001062009 Indigofera Species 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 238000002604 ultrasonography Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000000280 densification Methods 0.000 abstract description 2
- 238000000825 ultraviolet detection Methods 0.000 abstract 1
- 239000011701 zinc Substances 0.000 description 66
- 239000010408 film Substances 0.000 description 53
- 238000004891 communication Methods 0.000 description 17
- 229910052725 zinc Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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Abstract
The invention discloses a kind of Zn:Ga2O3Film base MSM structure solar blind UV electric explorers and preparation method thereof, in particular to using c surface sapphires monocrystalline as substrate, using Grown by Magnetron Sputtering alongThe Zn doping β Ga of crystal face preferential growth2O3Film (Zn:Ga2O3) as light absorbing layer, and passive electrode of the sputtering Au/Ti interdigital electrodes as photo-generated carrier on it, the Zn prepared:Ga2O3Film base MSM structure solar blind UV electric explorers.The present invention improves Ga by Zn doping2O3The speed of photoresponse of film base MSM structure solar blind UV electric explorers, using in Ga2O3Certain amount of Zn granular grows certain concentration Zn is placed around target build-up of luminance circle:Ga2O3Film, method are simple.The present invention use commercialized preparation method Grown by Magnetron Sputtering film, process controllability is strong, easy to operate, densification of gained film surface, thickness stable uniform, can large area preparation, it is reproducible.Zn prepared by the invention:Ga2O3Film base MSM structure solar blind UV electric explorers day blind ultraviolet detection field have potential application prospect.
Description
Technical field
The invention belongs to photodetector technical fields, and in particular to a kind of Zn:Ga2O3Film base MSM structure days are blind ultraviolet
Photodetector and preparation method thereof.
Technical background
Due to the absorption of ozone layer, day blind (200-280nm) wave band deep ultraviolet light in atmosphere almost be not present
, the solar blind light electric explorer for working in the wave band has the characteristics that false alarm rate is low.Due to not influenced by sunlight background, day
Blind UV signal detection sensitivity is high, and the communication accuracy rate to work in this wave band is also high, in military and space flight and aviation etc.
Aspect is widely used, and the accuracy at target of the infrared guidance guided missile that reaches its maturity of infrared countermeasure technique is by serious prestige in addition
The side of body, Ultraviolet Communication particularly day, blind Ultraviolet Communication just like had become the highest priority of various countries' military affairs contest.Relative to other several
Kind of wireless communication, day blind Ultraviolet Communication other than accuracy rate mentioned above is high, also the following aspects advantage：1. non-regard
Away from communication.Ultraviolet Communication carries out the nothing of the transmission of optical information, signal transmitting station and signal receiving platform by the diffusing reflection of atmosphere
Need to be a kind of communication of non line of sight in horizon range.It is 2. safe.In Ultraviolet Communication, ultraviolet signal emits
Afterwards, countless diffusing reflections are undergone in atmosphere and can be only achieved receiving platform, so that even if enemy detects signal very
The position of difficult localizing emission platform, can not find out and destroy it, therefore the safety of day blind Ultraviolet Communication is high.3. propagation distance can
Control, it is anti-interference, anti-eavesdrop ability is strong.Atmosphere delivers ultraviolet signal using diffusing reflection, while atmosphere is to ultraviolet light
It is also extremely strong to absorb, and the distance of Ultraviolet Communication can be controlled using this characteristic.If for example, think the range of control Ultraviolet Communication
Within the scope of 10km, by adjusting the ultraviolet signal intensity of transmitting station, make being covered within the scope of 10km for its optical signal；
And detected to reduce by enemy, if the range for wanting to control Ultraviolet Communication within the scope of 1km, suitably reduces the purple of transmitting station
Outer light signal strength makes being covered within the scope of 1km for its optical signal.Therefore, the propagation distance of Ultraviolet Communication is can to regulate and control
, it is anti-interference, anti-eavesdrop ability is stronger.4. very little affected by environment, can all weather operations.Since day blind Ultraviolet Communication is operated in
The day blind ultra-violet (UV) band of 200-280nm, which there's almost no at the earth's surface, therefore either daytime or night, day are blind
Ultraviolet Communication can all weather operations, do not influenced by other band of light such as visible ray and infrared light.In addition in day blind Ultraviolet Communication
In application except, solar blind UV electric explorer also has the application of other aspects, as national defence early warning and tracking, life science,
High-voltage line corona, ozone layer detection, detection of gas and analysis, flame sensing etc..
Ultraviolet detector currently on the market is true sky ultraviolet detector, compared to it, consolidating based on semi-conducting material
State ultraviolet detector due to weight is small, low in energy consumption, quantum efficiency is high, convenient for it is integrated the features such as have become scientific research people in recent years
The research hotspot of member.Although being doped the regulation and control that can be achieved to with gaps to existing wide bandgap semiconductor, it is made to be operated in day blind
Wave band, but it is very difficult to obtain the alloy firm of high quality, such as：Growth AlGaN films generally require very high temperature and
Extension film forming is difficult to, and ZnMgO is difficult the band gap for remaining above 4.5eV under the structure of mono-crystlling fibre zinc ore.Band gap is 4.9eV
β-Ga2O3Corresponding absorbing wavelength is 253nm, has high photoelectric response characteristic in ultraviolet region, is a kind of promising
Solar blind light electric explorer new material.
For β-Ga2O3Application of the material in terms of solar blind light electric explorer, there are reports at present, film morphology
β-Ga2O3Preparation method is simple, it is reproducible, can the advantages such as grown on larger scale, will be the best candidate commercially produced.So
And β-Ga2O3Often there are a large amount of Lacking oxygens inside film, these Lacking oxygens can capture photo-generated carrier, reduce photoelectricity spy
Survey the response time of device.The stabilization valence state of Zn is divalent, an electronics fewer than positive trivalent Ga, and the ligancy of Zn and O are than Ga and O
Ligancy it is few, the Lacking oxygen inside film can be theoretically reduced after Zn doped and substituteds Ga, improve photodetector response speed
Degree.
The present invention is prepared for the Zn of Zn doping:Ga2O3Film base MSM structure solar blind UV electric explorers.Compared to pure
Ga2O3Film, the Zn of Zn doping:Ga2O3Thin film detector has higher Light To Dark Ratio, faster speed of photoresponse.The invention is
Ga2O3The raising of the performance of film base MSM structure solar blind UV electric explorers provides theory and technology and supports.
Invention content
The purpose of the present invention is to provide a kind of Zn:Ga2O3Film base MSM structure solar blind UV electric explorers and its system
Preparation Method.Using c surface sapphires as substrate, the Zn that is adulterated by Grown by Magnetron Sputtering Zn:Ga2O3Film is as photosensitive layer, then passes through
The method of magnetron sputtering sputters Au/Ti interdigital electrodes as photo-generated carrier passive electrode.
Technical scheme is as follows：
The invention discloses a kind of Zn:Ga2O3Film base MSM structure solar blind UV electric explorers, by Zn:Ga2O3It is thin
Film, Sapphire Substrate and Au/Ti interdigital electrodes composition, the Zn:Ga2O3Film thickness is 150-200nm, positioned at sapphire
On substrate, area is identical with Sapphire Substrate, and Au/Ti interdigital electrodes are located at Zn:Ga2O3On film, including Ti membrane electrodes and Au
Membrane electrode, Ti membrane electrodes thickness are 30nm, and Au membrane electrodes are in the top of Ti membrane electrodes, thickness 70nm, Au/Ti
The length of interdigital electrode is 2800 microns, and width is 200 microns, spacing is 200 microns.
The invention also discloses a kind of Zn:Ga2O3The preparation method of film base MSM structure solar blind UV electric explorers, packet
Include following steps：
(1) using c surface sapphires as substrate, cleaning process is as follows：Substrate is dipped into acetone, ethyl alcohol, deionized water successively
In each ultrasonic 10 minutes, rinsed again with deionized water after taking-up, finally with dry N2Air-blowing is done, for use；
(2) Sapphire Substrate cleaned up is put into settling chamber, grows pure and Zn on it using magnetron sputtering
β-the Ga of doping2O3Film grows pure β-Ga2O3Film is with the Ga of 99.99% purity2O3Ceramics are target, and growth is specific dense
Spend Zn:Ga2O3Film is in Ga2O3Target rim places certain amount of Zn particles, and the specific growth parameter(s) of film is as follows：Back end
Vacuum is 1 × 10-4Pa, work atmosphere are Ar gas, and operating air pressure 0.8Pa, underlayer temperature is 650 DEG C, sputtering power 80W,
Sputtering time is 2h；
(3) the interdigital electrode mask plate shielding of film hollow out that will be prepared in step (2), using magnetically controlled sputter method elder generation
Splash-proofing sputtering metal Ti layers and Au layers acquisition Au/Ti interdigital electrodes, sputtering technology condition are as follows afterwards：Back end vacuum is 1 × 10-4Pa, lining
Bottom temperature is room temperature, and work atmosphere is Ar gas, and operating air pressure 0.8Pa, the sputtering time that 40W, Ti layers of sputtering power is
30s, Au layers of sputtering time is 70s.
Preferably, the Grown by Magnetron Sputtering Zn used in the step (2):Ga2O3In Ga during film2O3Target side
The Zn particles of different number are placed around edge to control the doping concentration of Zn.
The advantages of the present invention are：
Preparation process of the present invention is simple, and substrate used is commercial product；The present invention is in preparation process, using in Ga2O3
Certain amount of Zn granular grows certain concentration Zn is placed around target build-up of luminance circle:Ga2O3Film, method are simple.Using commercialization
Preparation method Grown by Magnetron Sputtering film, process controllability is strong, easy to operate, the densification of gained film surface, thickness stable uniform,
Can large area prepare, it is reproducible.
Description of the drawings
Fig. 1 is the Zn of pure made from the method for the present invention and various concentration Zn doping:Ga2O3The XRD diagram 1 (a) of film and
Its corresponding enlarged drawing 1 (b)；
Fig. 2 is the Zn of pure made from the method for the present invention and various concentration Zn doping:Ga2O3The ultraviolet-visible of film
Spectrum and its band gap (illustration)；
Fig. 3 is with Ga made from the method for the present invention2O3The structural representation of film base MSM structure solar blind UV electric explorers
Figure；
Fig. 4 is the Zn of pure made from the method for the present invention and 3.03at%Zn doping:Ga2O3Film solar blind light electrical resistivity survey is surveyed
Device is in dark, and (light intensity is 15 μ W/cm by 365nm and 254nm2) I-V curve under illumination；
Fig. 5 is the Zn of pure made from the method for the present invention and 3.03at%Zn doping:Ga2O3Film solar blind light electrical resistivity survey is surveyed
Device is biased in 10V and light intensity is 15 μ W/cm2254nm illumination under I-t curves and the fitting of response time；
Specific embodiment
It is further illustrated the present invention below in conjunction with example.
Example 1：Pure Ga2O3The preparation of film solar blind light electric explorer
The c surface sapphire substrates of a piece of 10mm × 10mm × 0.5mm sizes are first taken, substrate is dipped into acetone, second successively
It each ultrasonic 10 minutes in alcohol, deionized water, is rinsed again with deionized water after taking-up, finally with dry N2Air-blowing is done, for use.It will
The above-mentioned Sapphire Substrate cleaned up is put into settling chamber, and magnetron sputtering is used to grow one layer of β-Ga for 200nm on it2O3
Film, with the Ga of 99.99% purity2O3Ceramics are target, and the specific growth parameter(s) of film is as follows：Back end vacuum is 1 × 10- 4Pa, work atmosphere are Ar gas, and operating air pressure 0.8Pa, underlayer temperature is 650 DEG C, sputtering power 80W, and sputtering time is
2h.By the β-Ga of above-mentioned preparation2O3The interdigital electrode mask plate shielding of film hollow out is successively sputtered using magnetically controlled sputter method
Metal Ti layers (30nm) and Au layers (70nm) obtain Au/Ti interdigital electrodes, and sputtering technology condition is as follows：Back end vacuum is 1 × 10- 4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 0.8Pa, during the sputtering that 40W, Ti layers of sputtering power
Between for 30s, Au layer of sputtering time is 70s.Prepare pure Ga2O3Film solar blind light electric explorer.
Example 2：The Zn of various concentration Zn doping:Ga2O3The preparation of film solar blind light electric explorer
The c surface sapphire substrates of a piece of 10mm × 10mm × 0.5mm sizes are first taken, substrate is dipped into acetone, second successively
It each ultrasonic 10 minutes in alcohol, deionized water, is rinsed again with deionized water after taking-up, finally with dry N2Air-blowing is done, for use.It will
The above-mentioned Sapphire Substrate cleaned up is put into settling chamber, grows one layer of about difference of 200nm on it using magnetron sputtering
The Zn of concentration Zn doping:Ga2O3Film, with the Ga of 99.99% purity2O3Ceramics are female target, in Ga2O3Around target build-up of luminance circle
Place the Zn granular grows various concentrations Zn of different number:Ga2O3Film is (by XPS to Zn:Ga2O3The test of film is placed
The Zn prepared during 1,2,3,4,5,6 Zn particle:Ga2O3The doping concentration of Zn is respectively 0.69% in film,
0.88%, 0.96%, 1.83%, 2.49%, 3.03%), the specific growth parameter(s) of film is as follows：Back end vacuum is 1 × 10- 4Pa, work atmosphere are Ar gas, and operating air pressure 0.8Pa, underlayer temperature is 650 DEG C, sputtering power 80W, and sputtering time is
2h.By the Zn of above-mentioned preparation:Ga2O3The interdigital electrode mask plate shielding of film hollow out is successively sputtered using magnetically controlled sputter method
Metal Ti layers (30nm) and Au layers (70nm) obtain Au/Ti interdigital electrodes, and sputtering technology condition is as follows：Back end vacuum for 1 ×
10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 0.8Pa, the sputtering that 40W, Ti layers of sputtering power
Time is 30 s, and Au layers of sputtering time is 70s.Prepare the Zn of various concentration Zn doping:Ga2O3Film solar blind light electrical resistivity survey
Survey device.
Fig. 1 gives the pure and various concentration Zn Zn of doping:Ga2O3The XRD diagram 1 (a) of film and its corresponding enlarged drawing
1 (b) is removed outside the diffraction maximum of substrate, has and only hasFamily of crystal planes illustrates that all samples are all
AlongThe β phases Ga of crystal face preferential growth2O3Film.It can be seen that from the enlarged drawing of Fig. 1 (b) with Zn doping concentrations
Increase,Peak position gradually move to left, show that lattice constant constantly increases.This is drawn by Zn ion dopings substitution Ga ions
It rises, because of Zn2+And Ga3+Corresponding ionic radius is respectively 0.74 HeZn2+Ionic radius generally than Ga3+'s
Ionic radius is big.
Fig. 2 gives the pure and various concentration Zn Zn of doping:Ga2O3The Ultraviolet visible absorption spectrum of film, can from figure
To find out, the absorption peak of all samples has apparent solar blind UV sensitivity characteristic all in 260nm or so.Meanwhile with Zn
The increase of doping concentration, the gradual red shift of ABSORPTION EDGE, band gap also tapers into (Fig. 2 illustrations), this is because the band gap of ZnO is
3.2eV, than β-Ga2O34.9eV it is small.
Fig. 3 is with Ga made from the method for the present invention2O3The structural representation of film base MSM structure solar blind UV electric explorers
Figure.The Zn of pure and 3.03at%Zn doping:Ga2O3Film solar blind light electric explorer is in dark, and (light intensity is by 365nm and 254nm
15μW/cm2) I-V curve under illumination is presented in Fig. 4.Under dark and 365nm illumination, pure and 3.03at%Zn mixes
Miscellaneous Zn:Ga2O3The electric current of film solar blind light electric explorer is all very small, and is 15 μ W/cm in light intensity2254nm illumination under,
Electric current all increases sharply, and shows apparent solar blind light electrical characteristics.Compared to pure Ga2O3Film, 3.03at%Zn doping
Zn:Ga2O3Film photoelectric detector current increase is more notable.Under 10 biass, pure Ga2O3The electric current of film photoelectric detector from
0.43nA under dark situations increases to 13nA, Light To Dark Ratio I254/IdarkIt is 30；And the Zn of 3.03at%Zn doping:Ga2O3It is thin
Film photodetector increases to 34nA, Light To Dark Ratio I from the 0.31nA under dark situations254/IdarkIt is 110.Fig. 5 gives two
Device is biased in 10V and light intensity is 15 μ W/cm2254nm illumination under turned on light by continuous lamp and close the I-t curves that measure.We
Multiple I-t cycles are repeated, which shows good repeatability.We are by being fitted I-t curves, pure Ga2O3It is thin
The rising response time τ of film photodetectorr1/τr2With die-away time τd1/τd2Respectively 3.39s/20.30s and 0.60s/
0.05；And the Zn of 3.03at% Zn doping:Ga2O3The rising response time τ of film photoelectric detectorr1/τr2And die-away time
τd1/τd2Respectively 1.95s/15.04s and 0.25s.The solar blind light electric explorer of Zn doping shows the faster photoresponse time.
Claims (1)
1. a kind of Zn:Ga2O3The preparation method of film base MSM structure solar blind UV electric explorers, it is characterised in that including as follows
Step：
（1）Using c surface sapphires as substrate, cleaning process is as follows：Substrate is dipped into successively in acetone, ethyl alcohol, deionized water each
Ultrasound 10 minutes, is rinsed after taking-up with deionized water again, finally with dry N2Air-blowing is done, for use；
（2）The Sapphire Substrate cleaned up is put into settling chamber, grows pure and Zn doping on it using magnetron sputtering
'sβ-Ga2O3Film is grown pureβ-Ga2O3Film is with the Ga of 99.99% purity2O3Ceramics are target, grow certain concentration Zn:
Ga2O3Film is in Ga2O3Target rim places certain amount of Zn particles, and the specific growth parameter(s) of film is as follows：Back end vacuum is
1×10-4Pa, work atmosphere are Ar gas, and operating air pressure is 0.8 Pa, and underlayer temperature is 650 DEG C, and sputtering power is 80 W, is sputtered
Time is 2 h；The step（2）Used in Grown by Magnetron Sputtering Zn:Ga2O3In Ga during film2O3Around target rim
The Zn particles of different number are placed to control the doping concentration of Zn；
（3）By step（2）The interdigital electrode mask plate shielding of the film hollow out of middle preparation is successively splashed using magnetically controlled sputter method
Radioglold belongs to Ti layers and Au layers acquisition Au/Ti interdigital electrodes, and sputtering technology condition is as follows：Back end vacuum is 1 × 10-4Pa, substrate temperature
It spends for room temperature, work atmosphere is Ar gas, and operating air pressure is 0.8 Pa, and sputtering power is 40 W, and Ti layer of sputtering time is 30 s,
Au layers of sputtering time is 70 s；
It finally obtains by Zn:Ga2O3Film, Sapphire Substrate and Au/Ti interdigital electrodes composition Zn:Ga2O3Film base MSM structure days
Blind UV electric explorer, the Zn:Ga2O3Film thickness is 150-200 nm, in Sapphire Substrate, area and indigo plant
Jewel substrate is identical, and Au/Ti interdigital electrodes are located at Zn:Ga2O3On film, including Ti membrane electrodes and Au membrane electrodes, Ti films
Thickness of electrode is 30 nm, and Au membrane electrodes are in the top of Ti membrane electrodes, and thickness is 70 nm, the length of Au/Ti interdigital electrodes
It it is 2800 microns, width is 200 microns, spacing is 200 microns.
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| CN108470675B (en) * | 2018-02-28 | 2021-09-28 | 唐为华 | Si-based gallium oxide thin film back grid solar blind ultraviolet transistor and preparation method thereof |
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| CN105679874B (en) * | 2016-03-18 | 2017-10-20 | 张香丽 | A kind of high spectral selectivity and high-sensitivity ultraviolet detector and preparation method thereof |
| CN105932104A (en) * | 2016-05-23 | 2016-09-07 | 中国科学院长春光学精密机械与物理研究所 | Gallium oxide solar-blind UV detector and preparation method thereof |
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