CN109713058A - The gallium oxide ultraviolet detector and its preparation method and application of surface phasmon enhancing - Google Patents
The gallium oxide ultraviolet detector and its preparation method and application of surface phasmon enhancing Download PDFInfo
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Abstract
The present invention provides a kind of gallium oxide ultraviolet detector and its preparation method and application based on surface phasmon, the ultraviolet detector include substrate, positioned at the substrate surface the compound active layer of gallium oxide-metal nano ball and the electrode of the active layer surface is set, wherein, the compound active layer of gallium oxide-metal nano ball includes the metal nano ball in gallium oxide film layer and the insertion gallium oxide film layer, wherein the metal is one of Ga, Al, Mg and Pt or a variety of.It is of the invention based on gallium oxide-metal nano ball laminated film photodetector under the irradiation of solar blind UV, metal nano ball generates plasmon resonance effect, so that metal nano ball surface field enhances, scattering section increases, with Ga2O3Energy and thermoelectron transfer occur between material, thus substantially enhances gallium oxide detector to the detectivity of solar blind light, improves the response sensitivity of detector.
Description
Technical field
The present invention relates to semiconductor optoelectronic detection and technical field of nanometer material preparation, and in particular to a kind of to be received using metal
The Ga of rice ball surface plasmon resonance enhancing2O3Solar blind ultraviolet detector and its preparation method and application.
Background technique
In recent years, ultraviolet detector in various fields such as military affairs, aerospace, biomedicine and space communications because having extensively
Application prospect and be concerned and furtherd investigate.Solar blind light spectrum area is the deep ultraviolet that wavelength is between 220~280nm
Light, solar radiation can almost be absorbed by the ozone layer of the earth completely in the light of this wave band, and the background radiation in atmosphere connects
Nearly zero, therefore the ultraviolet signal detection of non-solar-blind band usually has extremely low ambient noise and high than the detection of its all band
Sensitivity.Low noise, the two highly sensitive unique advantages make solar blind ultraviolet detector in civilian and military each field
In it is more advantageous.
Currently, the research of solar blind ultraviolet detector is based primarily upon diamond, AlGaN, MgZnO and Ga2O3It partly leads equal broad stopbands
Body material.In these materials, Ga2O3Forbidden bandwidth be about 4.9eV, ABSORPTION EDGE just falls in solar blind light spectrum area, and compares Buddha's warrior attendant
Stone has higher detection efficient in non-solar-blind band, regulates and controls band gap by energy band engineering without as AlGaN and MgZnO,
It is a kind of natural day blind ultraviolet detection material；In addition, Ga2O3The efficiency of light absorption of material is high, and preparation process is simple, therefore non-
The often industrialized manufacture of suitable non-solar-blind band detector.It is existing about Ga2O3In the report of solar blind light electric explorer, in order to improve
The performance of detector, most researchers obtain the Ga of highly crystalline quality using single crystalline substrate and high-temperature deposition process2O3It is thin
Film, preparation process is more complex, higher cost, is unfavorable for large area industrial application.In addition, Ga2O3The high resistant characteristic of film itself
So that the responsiveness and detection efficient of device be not high.Especially in practical applications, day blind ultraviolet signal is usually very weak, low
Responsiveness significantly limit Ga2O3The development and application of solar blind ultraviolet detector.
Surface phasmon refers to that under the driving of electromagnetic wave (such as light field), the surface free electron of metal nanoparticle is sent out
The phenomenon that raw collective resonance.The precondition that surface plasmon resonance occurs is the collaboration vibration frequency of metallic particles internal electron
Rate is identical as the frequency of incident electromagnetic wave and resonates.Local electromagnetic field under resonance state around metal nanoparticle occurs
The enhancing of several times or even dozens of times, while the scattering section of incident light increases, thus largely improve light field and substance
Interaction.Metal nanoparticle plasmon resonance effect has been widely used for detector, solar battery, biology and passes
The fields such as sensor and Raman detection.
In the existing Ga about plasmon resonance enhancing2O3In the research of solar blind ultraviolet detector, generallys use aluminium and receive
Rice corpuscles, but how to be still puzzlement most researchers using the straightforward procedure preparation uniform metal nanoparticle of large area
Main problem.Have at present some about gold nanoparticle and Ga2O3The report of coupling, but the resonant absorption wavelengths of gold nanoparticle
Usually in visible light region, with Ga2O3The energy band coupling effect of material is poor, and gain effect is unobvious.In addition, in existing report, table
Face plasmon resonance is to the gain effect of unit component usually below a magnitude.In order to further increase day blind ultraviolet spy
The responsiveness for surveying device, needs to find better metal nanoparticle and its preparation process, while obtaining itself and Ga2O3Material is best
Coupled modes and high performance device preparation method.
In summary deficiency in the prior art needs the Ga for developing a kind of plasmon resonance enhancing for having high-gain2O3
Solar blind light electric explorer and preparation method thereof.
Summary of the invention
Therefore, the purpose of the present invention is to overcome the defect in the above-mentioned prior art, provide a kind of based on metal nano ball table
The Ga of face phasmon enhancing2O3Solar blind ultraviolet detector and its preparation method and application.
The present inventor is by buried-metal layer first in gallium oxide film, the Particular craft of after annealing obtains again
Gallium oxide-metal nano ball composite material, since the presence of metal nano ball plasmon resonance effect makes the ultraviolet of device
Responsiveness is significantly enhanced, and gain reaches as high as 300 times.
The present invention provides a kind of gallium oxide ultraviolet detector of surface phasmon enhancing, the ultraviolet detector includes
Substrate, positioned at the substrate surface the compound active layer of gallium oxide-metal nano ball and the active layer surface is set
Electrode, wherein the compound active layer of gallium oxide-metal nano ball includes gallium oxide film layer and is embedded in the gallium oxide film layer
Metal nano ball, wherein the metal of the metal nano ball is one of Ga, Al, Mg and Pt or a variety of.
The metal nano ball refers to the size by regulating and controlling nanosphere with distribution in day blind ultraviolet band generation etc.
Metallic particles from plasmon resonance effect.Preferably, the metal of the metal nano ball is Ga.
The gallium oxide ultraviolet detector provided according to the present invention, wherein the detector increases in the photoelectric current of non-solar-blind band
Benefit is greater than 5 times.Preferably, the photocurrent gain of the solar blind ultraviolet detector is greater than 10 times；It is highly preferred that the day is blind ultraviolet
The photocurrent gain of detector is greater than 100 times；Most preferably, the photocurrent gain of the solar blind ultraviolet detector is greater than 300 times.
The gallium oxide ultraviolet detector provided according to the present invention, wherein the substrate can be any rigid high temperature-resistant liner
Bottom, including common sapphire, silicon wafer, far ultraviolet high-purity quartz glass, glass slide etc..Preferably, the thickness of the substrate
It can be 0.05~1 millimeter.This is not particularly limited in the present invention, depending on the circumstances.
The gallium oxide ultraviolet detector provided according to the present invention, wherein the compound active layer of gallium oxide-metal nano ball
Thickness can be 0.05~1 micron, it is therefore preferable to 0.1~0.4 micron.Wherein, the metal nano ball is preferably dimensioned to be 5
~60nm.Wherein, the compound active layer of gallium oxide-metal nano ball is by successive deposition or alternating deposit oxygen on substrate
Change gallium layer and metal layer and prepared by being made annealing treatment.Therefore, the present invention for metal nano ball specific form and
Distribution in gallium oxide layer is not particularly limited, as long as with the presence of the metal nano ball in insertion gallium oxide film layer
To generate plasmon resonance effect, to improve the ultraviolet responsiveness of device.
The gallium oxide ultraviolet detector provided according to the present invention, wherein the electrode may include metal electrode and/or thoroughly
Bright membrane electrode, the metal electrode can be titanium electrode, chromium electrode and nickel electrode etc.；The transparent membrane electrode can wrap
Include tin indium oxide (ITO) film, aluminium zinc oxygen (AZO) film, gallium zinc oxygen (GZO) film and fluorine tin oxygen (FTO) film etc..It is preferred that
Ground, the thickness of the electrode can be 0.02~0.3 micron.This is not particularly limited in the present invention, depending on the circumstances.
The present invention also provides the Ga of above-mentioned surface phasmon enhancing2O3The preparation method of ultraviolet detector, the preparation side
Method include: using vacuum deposition method, using gallium oxide source and source metal substrate surface successively or alternating deposit Ga2O3Layer and gold
Belong to layer, is then made annealing treatment.Wherein, the successive or alternating deposit Ga2O3Layer and metal layer include: first to deposit Ga2O3
Layer, redeposited metal layer；First deposited metal layer, redeposited Ga2O3Layer；Sedimentary sequence is Ga2O3Layer-metal layer-Ga2O3Layer；It is heavy
Product sequence is metal layer-Ga2O3Layer-metal layer-Ga2O3Layer；Sedimentary sequence is Ga2O3Layer-metal layer-Ga2O3Layer-metal layer etc.
A variety of depositional modes.For more preferably device uniformity and simplified operation, preferably sedimentary sequence is Ga2O3Layer-metal layer-
Ga2O3Layer.
The preparation method provided according to the present invention, wherein the Ga2O3The overall thickness of layer can be 0.05~1 micron, excellent
Selection of land is 0.1~0.4 micron；The overall thickness of the metal layer can be 5~100nm.
The preparation method provided according to the present invention, wherein the temperature of the annealing can be 400~1250 DEG C, move back
The time of fire processing can be 10~150min.After annealing, the size of finally formed metal nano ball can for 5~
60nm。
In a preferred embodiment, the preparation method comprises the following steps:
1) substrate pre-treatment: drying is put into vacuum chamber after substrate is cleaned by ultrasonic；
2) preparation of active layer: after cavity has taken out vacuum, Ga is used2O3Source deposits bottom Ga on substrate2O3Film；It moves
Enter in the cavity equipped with source metal, in Ga2O3Deposited metal layer on film；It is moved into again equipped with Ga2O3In the cavity in source, in metal layer
One layer of Ga of surface redeposition2O3Film；It is then transferred into annealing furnace 10~150min of annealing at 400~1250 DEG C, forms institute
State the compound active layer of gallium oxide-metal nano ball；
3) institute the preparation of device architecture and electrode: is made by lithography on active layer using uv-exposure and development, fixing technologies
The electrode structure needed, places into depositing electrode in vacuum chamber, then removes extra photoresist and attachment on a photoresist more
Remaining electrode obtains the ultraviolet detector.
The preparation method provided according to the present invention, wherein Ga2O3The deposition method of film can swash selected from magnetron sputtering, pulse
One of light deposition and electron beam deposition；The deposition method of metal layer can for magnetron sputtering, thermal evaporation, molecular beam epitaxy,
Electron beam evaporation and various feasible chemical depositions, such as chemical vapour deposition technique and galvanoplastic.The present invention is to gallium oxide
The growing technology of film and metallic film does not do specific restriction.
The present invention also provides the ultraviolet detector or according to ultraviolet detector made from the method for the present invention medicine,
Biology, flame sensing, ozone monitoring, secure communication, missile guidance, Air Vehicle Detection and space ultraviolet technology field are answered
With.
Technical solution of the present invention has the advantage that
1, the present invention prepares whole flow process simple process, the controllability of gallium oxide-metal nano ball laminated film and device
It by force, being capable of large area production；
2, the present invention prepared by based on gallium oxide-metal nano ball laminated film photodetector peak value of response~
260nm, dark current is low, fast response time, solar blind UV excellent response performance；
3, it is prepared by the present invention based on gallium oxide-metal nano ball laminated film photodetector in solar blind UV
Under irradiation, metal nano ball generates plasmon resonance effect, so that metal nano ball surface field enhances, scattering section increases
Greatly, with Ga2O3Energy and thermoelectron transfer occur between material, thus substantially enhances gallium oxide detector to solar blind light
Detectivity improves the response sensitivity of detector；
4, solar blind ultraviolet detector performance prepared by the present invention is stablized, high sensitivity, and it is logical to can be applied to flame sensing, secrecy
The fields such as news, ozone monitoring, missile guidance.
Detailed description of the invention
Hereinafter, carrying out the embodiment that the present invention will be described in detail in conjunction with attached drawing, in which:
Fig. 1 is the structural schematic diagram of the gallium oxide ultraviolet detector of the invention based on surface phasmon；
Fig. 2 is Ga prepared by comparative example 12O3Photoelectric current-voltage curve of detector；
Fig. 3 is the Ga using the preparation of periodic 254nm ultraviolet light comparative example 12O3The resulting photoelectric current of detector with
The curve of time change；
Fig. 4 and Fig. 5 is photo 1 and photo 2 of the film sample of embodiment 2 at transmission electron microscope (TEM)；
Fig. 6 is the Ga of embodiment 1 to embodiment 4 preparation2O3Photoelectric current-voltage curve of solar blind ultraviolet detector；
Fig. 7 is the Ga using the preparation of periodic 254nm ultraviolet light embodiment 1 to embodiment 42O3Day blind ultraviolet spy
Survey the curve that the resulting photoelectric current of device changes over time；
Fig. 8 is the Ga prepared according to comparative example 1 and embodiment 1 to embodiment 42O3The photoresponse of solar blind ultraviolet detector is composed
Curve；
Fig. 9 is the extinction coefficient of the gallium nanosphere of different-diameter with the curve of wavelength change；
Figure 10 is Ga prepared by comparative example 2 and embodiment 52O3Photoelectric current-voltage curve of solar blind ultraviolet detector.
Specific embodiment
The present invention is further described in detail With reference to embodiment, and the embodiment provided is only for explaining
The bright present invention, the range being not intended to be limiting of the invention.
The present invention provides the gallium oxide ultraviolet detector based on surface phasmon structural schematic diagram such as Fig. 1 institute
Show, the ultraviolet detector from top to bottom successively include substrate 1, positioned at the substrate surface gallium oxide-metal nano ball it is multiple
It closes active layer 2 and the electrode 4 of the active layer surface is set, wherein the compound active layer of gallium oxide-metal nano ball
2 include insertion Ga2O3Metal nano ball 3 in film layer.
Comparative example 1
This comparative example is for illustrating the preparation process without gallium oxide solar blind ultraviolet detector existing for metal nano ball, specifically
Steps are as follows:
1) use acetone, alcohol, ultrapure water super respectively a piece of 15mm × 15mm × 0.5mm far ultraviolet super pure silica substrate
Sound cleans 5min, and is dried up with dry high pure nitrogen, and place it on an equal amount of sample carrier, puts into equipped with gallium oxide
The magnetron sputtering of ceramic target (purity 99.999%) is intracavitary stand-by.Sample stage is risen to highest point, and (target and substrate spacing are about
For 8mm), and the baffle below sample is closed, finally tightens the quick-release mouth of cavity.
2) vacuum-pumping system for starting cavity is passed through the high-purity of 10sccm after intracavitary back end vacuum is lower than 2E-4Pa
Argon gas gradually turns down when the slide valve of molecular pump connection cavity to intracavitary pressure is 2~3Pa and adds 300V bias build-up of luminance.To normal
Adjusted after build-up of luminance sputtering power be 60W, sputtering pressure 0.4Pa, the baffle below sample is opened after pre-sputtering 5min and is formally opened
Begin to sputter, gallium oxide thickness degree is about 250nm when total time to be sputtered is 20min, thoroughly stops sputtering, termination of pumping taking-up sample.
3) it will be transferred in high-temperature annealing furnace through the resulting gallium oxide film sample of step 2), and high temperature moves back at 1050 DEG C
Fiery 30min, annealing atmosphere are 200sccm argon gas.
4) on the sample thin film made from step 3) about 1 μ m-thick of spin coating S1813 positive photoresist.By coated photoresist
Sample be placed on stabilization carried out front baking 65 seconds on 115 DEG C of hot plate.
5) electrode structure is exposed on sample thin film using ultraviolet photolithographic machine MA6, used mask plate structure is wide 5 μ
M, 5 μm of spacing, long 300 μm, in total 75 pairs of interdigital structure.To the sample after exposure using MF-319 as developer solution, go from
Sub- water developed as fixing solution, fixing.
6) that sample made from step 5) is put into magnetron sputtering is intracavitary, and ITO target is fixed, and is passed through after having taken out vacuum
Tin indium oxide (ITO) film of the high-purity argon gas build-up of luminance sputtering about 100nm thickness of 10sccm, sputtering power 50W, sputtering pressure
0.4Pa, sputtering total time are 8min.
7) sample made from step 6) is put into acetone soln and is ultrasonically treated, ITO by extra photoresist and thereon
Electrode removes, and the electrode of interdigital structure is formed after solution-off, and finally obtains Ga2O3Solar blind light electric explorer.
By the resulting Ga of comparative example 12O3Solar blind ultraviolet detector carries out photoelectric current-voltage tester and time dependent light is rung
It should test, it is as a result as shown in Figures 2 and 3 respectively.The electric current of device is only when applied voltage is 10V, under 254nm ultraviolet light
It is 2.23 × 10-8A；Periodic switch 254nm ultraviolet light is the results show that device performance is more stable, but Light To Dark Ratio is only 2 numbers
Magnitude.Faint photo-signal is still difficult to meet practical application, needs one kind and significantly improves Light To Dark Ratio, enhances optic response
The method of degree.
Embodiment 1
The present embodiment is used to illustrate the preparation process of the gallium oxide ultraviolet detector of the invention based on surface phasmon.
It is specific the preparation method is as follows:
The Ga of surface phasmon enhancing of the invention is prepared according to the method essentially identical with comparative example 12O3Day is blind ultraviolet
Detector, the difference is that point three layers of deposition film in step 2), first by the method deposition in 1 step 2) of comparative example~
The Ga of 125nm2O3Film；Then sample is moved into the thermal evaporation system equipped with the source high pure metal Ga, is extracted into 1E-4Pa to vacuum
After begin to power up stream, evaporate Ga layers of metal of 10nm；Ga layers of metal and gallium oxide layer double-layer structure film will finally be deposited
Sample is put into the magnetron sputtering cavity equipped with gallium oxide target, again according to method deposition~125nm of 1 step 2) of comparative example
Gallium oxide film.
Embodiment 2
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
2) in Ga layers of thermal evaporation metal with a thickness of 20nm.
With resulting sample after 2 step 3) high annealing of blade scraped finish embodiment, sample powder is obtained.And used in TEM
Copper mesh dip a small amount of above-mentioned sample powder, and transmission electron microscope observation, discovery gold are carried out to the sample powder on copper mesh
Belong to the presence of gallium nanosphere, two sets of crystal planes as shown in Figure 4, interplanar distance is respectively 0.2615nm and 0.2566nm, crystal face
Angle is about 76 °, this shows that the two sets of crystal planes respectively correspond (110) and (021) face of gallium.In addition, the result of TEM is also
The size for showing gallium nanosphere is about 10~20nm (such as Fig. 5).
Embodiment 3
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
2) in Ga layers of thermal evaporation metal with a thickness of 30nm.
Embodiment 4
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
2) in Ga layers of thermal evaporation metal with a thickness of 40nm.
In Fig. 6 into Fig. 8, legend sample 1 to sample 4 respectively corresponds the ultraviolet detection of embodiment 1 to embodiment 4 preparation
Device, comparative sample 1 are ultraviolet detector prepared by comparative example 1.
Fig. 6 gives photoelectric current-voltage relation curve of device under different metal gallium thickness degree.It can be seen that phase
For the photoelectric current of Fig. 1 comparative sample 1 provided, the photoelectric current of four samples of incorporation intermetallic metal gallium layer has different degrees of
It improves, especially photoelectric current of the sample 2 under 10V bias is up to 6.86 × 10-6A, the gain of light relative to comparative sample 1 are higher than
300 times.
Fig. 7 gives the time dependent photoresponse curve of device under different metal gallium thickness degree, test when institute making alive
For 10V.By the periodically ultraviolet light of switch 254nm, periodic response characteristic is presented in the electric current of device, shows that device has
Stable photoresponse and good repeat property illustrates that the device for introducing gallium nanosphere has the stable gain of light.In addition,
The failing edge of all curves electric current when closing light is steep, shows the fast response time of device.
Fig. 8 gives the photoresponse spectrum of the solar blind ultraviolet detector of comparative example 1 and embodiment 1 to embodiment 4 preparation, test
Shi Caiyong stand upright Chinese light model Omni- λ 180i fiber spectrometer as incident light source.When acquiring spectrum, since 200nm
It scans to long wave length direction to 800nm and stops, external voltage added by device is 15V.As seen from the figure, the peak value of response of all devices exists
At about 260nm, with Ga2O3The band gap of material is coincide.The sample optical responsivity for introducing intermediate gallium layer after annealing has very strong light to increase
Benefit, for sample 2 peak response degree up to 2.73A/W.
The evidence in conjunction with existing for gallium nanosphere in TEM (Fig. 4 and Fig. 5), considers the gain of above-mentioned photoelectric current and optical responsivity
From the surface plasmon resonance effect of gallium nanosphere.It can be with to verify the surface plasmon resonance energy of gallium nanosphere
Ga2O3The coupling on energy occurs, tests the Spectral Extinction (Fig. 9) of the gallium nanosphere of different-diameter.Gallium nanosphere is adopted
It is prepared with the method for thermal evaporation, Spectral Extinction is tested using Ellipsometric Spectrum Method.It can be seen that from the result of Fig. 9 with metal
The reduction of gallium nanometer bulb diameter, the peak position of Spectral Extinction is gradually mobile to shortwave length direction, shows gallium nanosphere phasmon
The energy of resonance is mobile to high-energy tail.The peak value of the Spectral Extinction for the gallium nanosphere that diameter is 15nm is 270nm, has fallen in day
Blind wave band, and and Ga2O3The absorption magnetic tape trailer of material has the overlapping on energy, can be with Ga2O3Material occurs under plasmon resonance
Energy transfer, generate the biggish gain of light.
Comparative example 2
Ultraviolet detector of the invention is prepared according to the method essentially identical with comparative example 1, the difference is that, in step
2) thickness~125nm of gallium oxide film in.
Embodiment 5
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
2) in film be double-layer structure, specially bottom be magnetron sputtering~125nm gallium oxide film, upper layer be thermal evaporation 30nm
Ga layers of high pure metal.
Figure 10 give according to comparative example 2 prepare comparative sample 2 and according to embodiment 5 prepare sample 5 photoelectric current with
The relation curve of voltage change.As seen from the figure, in the photoelectric current of Ga layers of superficial deposit metal of sample relative to identical Ga2O3
The photoelectric current of the single layer samples of thickness increases about 65 times.Proof sedimentary sequence is Ga2O3The sample of layer-metal layer can be realized
The effect of plasmon resonance enhancing.
Embodiment 6
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
3) temperature that uses is 950 DEG C when high temperature makes annealing treatment, annealing time 20min.
Embodiment 7
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
3) atmosphere when high temperature makes annealing treatment is the mixed gas of 50sccm high pure nitrogen and the high purity oxygen gas of 10sccm.
Embodiment 8
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
2) intermediate metal layer of film deposits high pure metal aluminium using magnetically controlled sputter method in, deposits the metal Al layer of about 15nm.
Embodiment 9
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 8, the difference is that, in step
2) intermediate metal layer of film prepares magnesium metal layer using molecular beam epitaxial method epitaxy in, and extension generates the metal of about 20nm
Mg layers；The atmosphere used in step 3) high temperature annealing furnace is the mixed of the high purity oxygen gas of 150sccm high-purity argon gas and 20sccm
Close gas.
Embodiment 10
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
2) high pure metal platinum source is deposited using the method for electron beam evaporation in the intermediate metal layer of film in, obtains the Pt metal of about 20nm
Layer；In the annealing temperature that step 3) high temperature annealing furnace is set as 1200 DEG C, annealing time 90min.
Embodiment 11
Ultraviolet detector of the invention is prepared according to method substantially the same manner as Example 1, the difference is that, in step
2) intermediate metal layer of film is the metal Al film that about 15nm is prepared using galvanoplastic in；It is set in step 3) high temperature annealing furnace
Fixed annealing temperature is 500 DEG C, annealing time 20min.
Other embodiments according to the present invention, the material of interdigital electrode are not limited to tin indium oxide (ITO) film, can be with
It is any other conductive material well known in the art, such as titanium, crome metal and metallic nickel, aluminium zinc oxygen (AZO), gallium zinc oxygen
(GZO) and fluorine tin oxygen (FTO) etc..
The preferred embodiment of the present invention is merely to illustrate not for technical solution of the present invention is limited, and the invention patent is simultaneously
It is not limited to embodiment as described herein, the case where not departing from the spirit and scope of each embodiment technical solution of the present invention
Under, this patent range further includes the various reasonable modifications and modification that content according to the present invention is made.
Claims (10)
1. a kind of gallium oxide ultraviolet detector based on surface phasmon, the ultraviolet detector includes substrate, positioned at described
The compound active layer of gallium oxide-metal nano ball of substrate surface and the electrode that the active layer surface is set, wherein described
The compound active layer of gallium oxide-metal nano ball includes the metal nano ball in gallium oxide film layer and the insertion gallium oxide film layer,
Wherein the metal of the metal nano ball is one of Ga, Al, Mg and Pt or a variety of.
2. gallium oxide ultraviolet detector according to claim 1, wherein the metal of the metal nano ball is Ga.
3. gallium oxide ultraviolet detector according to claim 1 or 2, wherein the ultraviolet detector is in non-solar-blind band
Photocurrent gain is greater than 5 times；Preferably, the photocurrent gain of the solar blind ultraviolet detector is greater than 10 times；It is highly preferred that described
The photocurrent gain of solar blind ultraviolet detector is greater than 100 times；Most preferably, the photocurrent gain of the solar blind ultraviolet detector is big
In 300 times.
4. gallium oxide ultraviolet detector according to any one of claim 1 to 3, wherein the gallium oxide-metal nano
The compound active layer of ball with a thickness of 0.1~1 micron, preferably 0.1~0.4 micron, it is preferable that the size of the metal nano ball
For 5~60nm.
5. gallium oxide ultraviolet detector according to any one of claim 1 to 4, wherein the substrate be selected from sapphire,
One of silicon wafer, far ultraviolet high-purity quartz glass, glass slide, it is preferable that the substrate with a thickness of 0.05~1 millimeter；
The electrode includes metal electrode and/or transparent membrane electrode, and the metal electrode includes titanium electrode, chromium electrode and nickel electricity
Pole；The transparent membrane electrode includes indium tin oxide films, aluminium zinc oxygen film, gallium zinc oxygen film and fluorine tin oxide film, it is preferable that
The electrode with a thickness of 0.02~0.3 micron.
6. the preparation method of gallium oxide ultraviolet detector described in any one of claims 1 to 5, the preparation method include: use
Vacuum deposition method, using gallium oxide source and source metal substrate surface successively or alternating deposit Ga2O3Layer and metal layer, then into
Row annealing.
7. preparation method according to claim 6, wherein the sequence of deposition is Ga2O3Layer-metal layer-Ga2O3Layer.
8. preparation method according to claim 6, comprising the following steps:
1) substrate pre-treatment: drying is put into vacuum chamber after substrate is cleaned by ultrasonic；
2) preparation of active layer: after cavity has taken out vacuum, Ga is used2O3Source deposits bottom Ga on substrate2O3Film；Immigration is equipped with
In the cavity of source metal, in Ga2O3Deposited metal layer on film；It is moved into again equipped with Ga2O3In the cavity in source, on the surface of metal layer
One layer of Ga of redeposition2O3Film；It is then transferred into annealing furnace 10~150min of annealing at 400~1250 DEG C, forms the oxidation
The compound active layer of gallium-metal nano ball；
3) it the preparation of device architecture and electrode: is made by lithography on active layer using uv-exposure and development, fixing technologies required
Electrode structure, places into depositing electrode in vacuum chamber, then removes the extra electricity of extra photoresist and attachment on a photoresist
Pole obtains the ultraviolet detector.
9. preparation method according to claim 6, wherein Ga2O3The deposition method of film is selected from magnetron sputtering, pulse laser
One of deposition and electron beam deposition；The deposition method of metal layer is selected from magnetron sputtering, thermal evaporation, molecular beam epitaxy, electronics
Beam evaporation, chemical vapour deposition technique and galvanoplastic.
10. ultraviolet detector described in any one of claims 1 to 5 or according to described in any one of claim 6 to 9 side
Ultraviolet detector made from method is visited in medicine, biology, flame sensing, ozone monitoring, secure communication, missile guidance, aircraft
Application in survey and space ultraviolet technology field.
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| CN110265504A (en) * | 2019-07-01 | 2019-09-20 | 哈尔滨工业大学 | A kind of UV photodetector and preparation method thereof |
| CN110556452A (en) * | 2019-07-30 | 2019-12-10 | 中国科学技术大学 | solar blind photoelectric detector and preparation method thereof |
| CN111129225A (en) * | 2019-12-26 | 2020-05-08 | 重庆大学 | Ultraviolet photoelectric detector and preparation method thereof |
| CN111710731A (en) * | 2020-06-19 | 2020-09-25 | 中国科学技术大学 | Gallium oxide solar blind photoelectric detector and preparation method thereof |
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| CN112599622A (en) * | 2020-12-15 | 2021-04-02 | 广西大学 | Sandwich structure array type porous ultraviolet photoelectric detector and preparation method thereof |
| CN112599622B (en) * | 2020-12-15 | 2023-09-26 | 广西大学 | Sandwich structure array type porous ultraviolet photoelectric detector and preparation method thereof |
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| CN114438449A (en) * | 2021-12-30 | 2022-05-06 | 中国科学院宁波材料技术与工程研究所 | Metal-assisted gallium oxide crystalline thin film and preparation method thereof |
| CN115172511A (en) * | 2022-07-18 | 2022-10-11 | 西安电子科技大学 | Gallium oxide solar blind ultraviolet detector with graphene and polar J-TMD insertion layer and preparation method thereof |
| CN116072744A (en) * | 2023-01-16 | 2023-05-05 | 哈尔滨工业大学 | Method for improving ultraviolet detection performance of diamond by adopting indium nanoparticle localized surface plasmon resonance |
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