CN110133388A - A kind of regular reflection PT symmetrical structure electric-field sensor - Google Patents
A kind of regular reflection PT symmetrical structure electric-field sensor Download PDFInfo
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- CN110133388A CN110133388A CN201910382483.9A CN201910382483A CN110133388A CN 110133388 A CN110133388 A CN 110133388A CN 201910382483 A CN201910382483 A CN 201910382483A CN 110133388 A CN110133388 A CN 110133388A
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- 230000005684 electric field Effects 0.000 title claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000000694 effects Effects 0.000 claims abstract description 9
- 238000002310 reflectometry Methods 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 239000000696 magnetic material Substances 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000004458 analytical method Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
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Abstract
A kind of regular reflection PT symmetrical structure electric-field sensor, the electric-field sensor use period PT symmetrical structure, and wherein each period is successively made of tri- kinds of different dielectric layers of A, B, C, periodicity N；A layers are made of gain medium material, and C layers are made of lossy medium material, and B layers are constructed using electrooptical material；B layer in structure acts as the effect of resonant cavity, and cooperation periodic structure generates Bragg diffraction；All material is non-magnetic material.Band edge mode and regular reflection phenomenon is mainly presented under the collective effect of Bragg diffraction and resonant cavity in the electric-field sensor in structure, the sensing to electric field can be realized by measurement structure transmissivity size, and pass through the analytical judgment dispatch from foreign news agency field direction of reflectivity.Pass through the analysis to the sensor design scheme, it is known that the program possesses high sensitivity, the every variation 1V/nm of electric field in lesser electric field fluctuation range, and transmissivity variation reaches as high as 3000dB.
Description
Technical field
This patent is related to optical device design field, and in particular to a kind of regular reflection PT symmetrical structure electric-field sensor.
Background technique
The measurement of electric field strength is important link indispensable in industrial production and scientific research, miscellaneous electric field
The every aspect of intensity or voltage-measuring equipment throughout people's production and living.In the design of electric field sensing equipment, high-intensitive electricity
Field measurement and sensing are a more difficult fields.High-intensitive electric field be all for people and equipment it is extremely hazardous, this is just
It is required that sensing equipment has the characteristics that high reliablity, electrical characteristic stable, deployment and use process safe and convenient, and optical electric-field
Sensor exactly meets such requirement.
In recent years, optical device design field emerged large quantities of with PT (parity-time, parity-time) symmetrical junction
Research achievement based on structure.PT symmetrical structure in conjunction with Traditional optics, not only device performance improvement open it is new
Thinking also reveals a series of unusual physical properties possessed by PT symmetrical structure.
Summary of the invention
PT symmetrical structure is applied to optical device design field by this patent, proposes a kind of regular reflection PT symmetrical structure electricity
Field sensor.
A kind of regular reflection PT symmetrical structure electric-field sensor, the electric-field sensor use period PT symmetrical structure,
In each period be successively made of tri- kinds of different dielectric layers of A, B, C, periodicity N, total can use (ABC)N
It indicates；
A layers are made of gain medium material, and C layers are made of lossy medium material, and B layers are constructed using electrooptical material；Structure
In B layer act as the effect of resonant cavity, cooperation periodic structure generates Bragg diffraction；
All material is non-magnetic material, i.e., relative permeability is 1.
Further, make base material using silica in A layers and C layer and adulterate various forms of quantum dots, distinguish structure
At gain medium material and lossy medium material.
Further, B layers of electrooptical material uses the lithium niobate of 5mol% magnesia doping, is a kind of typical electric light
Material, refractive index can change with extra electric field.
Further, A layers of holding is equal with C thickness degree, is distributed in refractive index in structure near specified operation wavelength,
Meet PT symmetric condition.
Further, A layers and C layers of thickness d are takenA=dc=1870nm；B layers of one can be regarded as between A layers and C layers
Resonant cavity, thickness dB=675.95nm, such thickness adjustment make incidence wave resonate in B layers, and intensity gets a promotion,
Stronger characteristic appearance can be also generated when acting on gain, lossy medium.
Further, by observing the transmission spectral line of electric-field sensor, the size of extra electric field is adjusted, structure can be longer
One section of wave-length coverage in fall among band gap, using the band edge mode existing for band gap edge, pass through observation transmission peak value
Height can obtain locating electric field level.
Further, by the regular reflection caused by the Bragg diffraction of electric-field sensor structure, positive and negative two sides are compared
To reflectivity size, can determine whether out the direction of electric field locating for sensor.
What this patent reached has the beneficial effect that the electric-field sensor in the collective effect of Bragg diffraction and resonant cavity
Under, two special natures are mainly showed in structure: band edge mode and regular reflection phenomenon.It can be in the transmission of structure with edge mode
A higher peak value is generated in spectrum, height is related with extra electric field.Based on this, external electric field size and transmission peaks are established
The corresponding relationship of height can realize the sensing to electric field by measurement structure transmissivity size.And occur in structure unidirectional
Reflex, so that the electromagnetic wave along different incident directions possesses different reflectivity.Its directionality is influenced by dispatch from foreign news agency field direction,
Therefore it can be used for judging dispatch from foreign news agency field direction.Pass through the analysis to the sensor design scheme, it is known that the program is in lesser electricity
Possess high sensitivity, the every variation 1V/nm of electric field in the fluctuation range of field, transmissivity variation reaches as high as 3000dB.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of electric-field sensor described in this patent.
Specific embodiment
Technical solution of the present invention is described in further detail with reference to the accompanying drawings of the specification.
A kind of regular reflection PT symmetrical structure electric-field sensor, the electric-field sensor use period PT symmetrical structure,
In each period be successively made of tri- kinds of different dielectric layers of A, B, C, periodicity N, total can use (ABC)N
It indicates.
A layers are made of gain medium material, and C layers are made of lossy medium material, and B layers are constructed using electrooptical material；Structure
In B layer act as the effect of resonant cavity, cooperation periodic structure generates Bragg diffraction.
All material is non-magnetic material, i.e., relative permeability is 1.
Make base material using silica in A layers and C layers and adulterate various forms of quantum dots, respectively constitutes gain media
Material and lossy medium material.The dielectric constant that Lorentz model describes A, C layers can be used:
Electron Relaxation rate γ=1 × 10 in formula (1)14s-1, oscillation frequency ω0=1.221 × 1015(corresponding λ0=
1543.835nm).For base material SiO2, permittivity εhIt can be closed with Sellmeier dispersion with the relationship of incident wavelength λ
System's description.Three wavelength points in formula (1) are respectively λ1=68nm, λ2=116nm, λ3=9896nm, corresponding coefficient difference
For C1=0.7, C2=0.41, C3=0.9.For A layers, α=- 1.8428 × 10-3Indicate gain, and for C layers of α=1.8428
×10-3Indicate loss.
B layers of electrooptical material uses the lithium niobate of 5mol% magnesia doping, is a kind of typical electrooptical material, folding
The rate of penetrating can be with extra electric field EexVariation.Due to LiNbO3It is the symmetrical lattice structure of 3m, when external electrical field is applied to z-axis direction,
The refractive index ellipsoid of medium can indicate are as follows:
Due to LiNbO3It is a kind of uniaxial crystal, n can be usedoIndicate x and y-axis to refractive index, use neIndicate z-axis to folding
Penetrate rate.Consider that incidence wave only exists the electric field on the direction y, the i.e. situation of TE wave incidence, formula (3) by abbreviation and can obtain formula
(4) B layers of refractive index n inBForm, wherein nB0=2.286 are equivalent to the n in formula (3)e, electro-optic constant γ13=8.6 × 10- 12m/V。
Firstly, overall index distribution needs to meet in structure in order to make structure show unusual optical property
Or substantially meet PT symmetric condition.On the one hand, in the case where extra electric field is constant, B layers of the refractive index known to formula (4) is one
Fixed value and imaginary part are 0.On the other hand, it can learn that A, C layers of medium take opposite α value to ensure that n by formula (1)AAnd nCImaginary part
Then remain the relationship of opposite number each other.Therefore, as long as A layers of holding is equal with C thickness degree, it is distributed in refractive index in structure
Near specified operation wavelength, meet PT symmetric condition.
Secondly, in order to enhance the special transmission phenomenon of PT symmetrical structure, adjustable each thickness degree makes transmission characteristic
Calculated result is optimal.According to the frequency of oscillation of Lorentz model in formula (1), A layers and C layers of thickness d are takenA=dc=1870nm；
The B layers of resonant cavity that can be regarded as between A layers and C layers, thickness can be by resonant check condition nBdB=λ0It calculates
Out, it is assumed that extra electric field Eex=0, obtain dB=675.95nm, such thickness adjustment make incidence wave resonate in B layers,
Intensity gets a promotion, and can also generate stronger characteristic appearance when acting on gain, lossy medium.
By observing the transmission spectral line of electric-field sensor, the size of extra electric field is adjusted, structure can be in a longer Duan Bo
It is fallen among band gap in long range, using the band edge mode existing for band gap edge, the height by observing transmission peak value can be obtained
Locating electric field level out.
There are gains or loss phenomenon in band edge for PT symmetrical structure, although gain and lossy medium are to be uniformly distributed in structure
, but the resonance in structure causes photon different from the action time of gain or lossy medium, when photon and gain media act on
Time when being greater than lossy medium, the whole gain effect just shown to incident light is on the contrary then show to be lost.In addition, this
Kind phenomenon is the most obvious in band gap edge, is because the group velocity of light wave is minimum in structure at this time, photon and gain, loss are situated between
The time also longest of matter effect, the gain shown or loss phenomenon are also most apparent.From the point of view of specific, the B layer in structure fills
When the effect of resonant cavity, periodic structure is cooperated to generate Bragg diffraction, and then produces many unusual transport phenomenas.Institute
With the property of N and B layers of structural cycle number has important influence for structural integrity matter.Structural cycle number is first increased into N
=400, there is highly transmissive, the reflection of narrower in width in the position that band edge mode will significantly be enhanced, while generate enhancing
Peak, this is the basis for realizing sensor.
Really the transport property of structure and external electrical field size are connected, are the electrooptical materials in B layers.In outside
Electric field forward entrance and symbol are timing, and external electrical field is bigger, and highest transmission peaks get over Xiang Zuoyi, and height then decreases.When
It is changed to the reversed incident and symbol of external electrical field to be negative, external electrical field direction reversion, transmission peak value is mentioned with the increase of electric field level
Height, position also gradually move to right.There is transmission peak value with the rule of external electrical field size variation, so that it may transmit by observation structure
The height of peak value obtains electric field level locating for structure, is also achieved that electric field sensing.The maximum of such a sensor mechanism is excellent
The process for being to eliminate peak position detection is put, the size of transmissivity is only detected, it is simpler in terms of the reading of sensing data
It is single.Meanwhile PT symmetrical structure is equivalent to sensor and has carried amplifier in the amplification of band gap edge, is also transmissivity
Variation provides wide range.
By electric-field sensor structure Bragg diffraction caused by regular reflection, compare the reflectivity of positive and negative both direction
Size can determine whether out the direction of electric field locating for sensor.
Why regular reflection phenomenon can be used for the judgement of direction of an electric field, be directionality and electric field because of regular reflection
Directional correlation.In the case where external electrical field incident direction is opposite, reflected energy weakens when forward entrance, and reversed incident
When, reflected energy is enhanced.The reflectivity size for comparing positive and negative both direction, can judge the side of electric field locating for sensor
To.
The foregoing is merely better embodiment of the invention, protection scope of the present invention is not with above embodiment
Limit, as long as those of ordinary skill in the art's equivalent modification or variation made by disclosure according to the present invention, should all be included in power
In the protection scope recorded in sharp claim.
Claims (7)
1. a kind of regular reflection PT symmetrical structure electric-field sensor, it is characterised in that: the electric-field sensor uses PT pairs of the period
Claim structure, wherein each period is successively made of tri- kinds of different dielectric layers of A, B, C, periodicity N, and total can be with
With (ABC)NIt indicates；A layers are made of gain medium material, and C layers are made of lossy medium material, and B layers are constructed using electrooptical material；
B layer in structure acts as the effect of resonant cavity, and cooperation periodic structure generates Bragg diffraction；All material is non magnetic
Material, i.e. relative permeability are 1.
2. a kind of regular reflection PT symmetrical structure electric-field sensor according to claim 1, it is characterised in that: A layers and C layers
It is middle to make the various forms of quantum dots of base material doping using silica, respectively constitute gain medium material and lossy medium material
Material.
3. a kind of regular reflection PT symmetrical structure electric-field sensor according to claim 1, it is characterised in that: B layers of electricity
Luminescent material uses the lithium niobate of 5mol% magnesia doping, is a kind of typical electrooptical material, refractive index can be with outer power-up
Field variation.
4. a kind of regular reflection PT symmetrical structure electric-field sensor according to claim 1, it is characterised in that: kept for A layers
It is equal with C thickness degree, it is distributed in refractive index in structure near specified operation wavelength, meets PT symmetric condition.
5. a kind of regular reflection PT symmetrical structure electric-field sensor according to claim 1, it is characterised in that: take A layers and C
Layer thickness dA=dc=1870nm；The B layers of resonant cavity that can be regarded as between A layers and C layers, thickness dB=675.95nm,
Such thickness adjustment makes incidence wave resonate in B layers, and intensity gets a promotion, and also can when acting on gain, lossy medium
Generate stronger characteristic appearance.
6. a kind of regular reflection PT symmetrical structure electric-field sensor according to claim 1, it is characterised in that: pass through observation
The transmission spectral line of electric-field sensor, adjusts the size of extra electric field, and structure can fall into band gap in longer one section of wave-length coverage
Among, using the band edge mode existing for band gap edge, the height by observing transmission peak value can obtain locating electric field level.
7. a kind of regular reflection PT symmetrical structure electric-field sensor according to claim 1, it is characterised in that: passed by electric field
Regular reflection caused by the Bragg diffraction of sensor structure compares the reflectivity size of positive and negative both direction, can determine whether out to pass
The direction of electric field locating for sensor.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112964679A (en) * | 2021-03-17 | 2021-06-15 | 哈尔滨工程大学 | Gas concentration sensor based on PT symmetrical structure |
| CN112985635A (en) * | 2021-03-17 | 2021-06-18 | 哈尔滨工程大学 | Wireless temperature sensor based on PT symmetry |
| CN114002515A (en) * | 2021-12-31 | 2022-02-01 | 南京高华科技股份有限公司 | Electric field sensor and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112964679A (en) * | 2021-03-17 | 2021-06-15 | 哈尔滨工程大学 | Gas concentration sensor based on PT symmetrical structure |
| CN112985635A (en) * | 2021-03-17 | 2021-06-18 | 哈尔滨工程大学 | Wireless temperature sensor based on PT symmetry |
| CN112985635B (en) * | 2021-03-17 | 2021-12-21 | 哈尔滨工程大学 | Wireless temperature sensor based on PT symmetry |
| CN112964679B (en) * | 2021-03-17 | 2022-02-01 | 哈尔滨工程大学 | Gas concentration sensor based on PT symmetrical structure |
| CN114002515A (en) * | 2021-12-31 | 2022-02-01 | 南京高华科技股份有限公司 | Electric field sensor and preparation method thereof |
| CN114002515B (en) * | 2021-12-31 | 2022-04-05 | 南京高华科技股份有限公司 | Electric field sensor and preparation method thereof |
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