CN110133388B - Electric field sensor with unidirectional reflection PT symmetrical structure - Google Patents
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- 230000005684 electric field Effects 0.000 title claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000000382 optic material Substances 0.000 claims abstract description 12
- 230000000737 periodic effect Effects 0.000 claims abstract description 8
- 238000002310 reflectometry Methods 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims abstract description 5
- 239000000696 magnetic material Substances 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000411 transmission spectrum Methods 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 4
- 230000009471 action Effects 0.000 abstract description 3
- 238000004458 analytical method Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
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Abstract
The utility model provides a one-way reflection PT symmetrical structure electric field sensor, the electric field sensor adopts cycle PT symmetrical structure, and wherein each cycle comprises A, B, C three kinds of different dielectric layers in proper order, and the cycle is N; the layer A is made of gain medium material, the layer C is made of loss medium material, and the layer B is made of electro-optic material; the layer B in the structure acts as a resonant cavity and cooperates with the periodic structure to generate Bragg scattering; all materials are non-magnetic materials. Under the combined action of Bragg scattering and a resonant cavity, the electric field sensor mainly structurally presents a band edge mode and a unidirectional reflection phenomenon, can realize the sensing of an electric field by measuring the transmissivity of the structure, and judges the direction of an external electric field by analyzing the reflectivity. Through analysis of the sensor design scheme, the scheme has extremely high sensitivity in a smaller electric field fluctuation range, and the transmittance change can reach 3000dB at most when the electric field changes by 1V/nm.
Description
Technical Field
The patent relates to the field of optical device design, in particular to a one-way reflection PT symmetrical structure electric field sensor.
Background
Measurement of electric field intensity is an indispensable important link in industrial production and scientific research, and various electric field intensity or voltage measuring instruments are spread over the aspects of production and life of people. In the design of electric field sensing devices, high-intensity electric field measurement and sensing is one area where it is difficult. High-strength electric fields are extremely dangerous to people and equipment, so that the sensing equipment is required to have the characteristics of high reliability, stable electrical characteristics, safe and convenient deployment and use processes and the like, and the optical electric field sensor just meets the requirements.
In recent years, the field of optical device design has emerged as a large group of research results based on PT (space-time) symmetrical structures. The PT symmetrical structure is combined with the traditional optical device, so that a new thought is opened for improving the performance of the device, and a series of singular physical properties of the PT symmetrical structure are also disclosed.
Disclosure of Invention
This patent is applied PT symmetrical structure to optics design field, proposes a one-way reflection PT symmetrical structure electric field sensor.
An electric field sensor with a unidirectional reflection PT symmetrical structure adopts a periodic PT symmetrical structure, wherein each period sequentially consists of A, B, C three different medium layers, the period number is N, and the whole structure can be used (ABC) N A representation;
the layer A is made of gain medium material, the layer C is made of loss medium material, and the layer B is made of electro-optic material; the layer B in the structure acts as a resonant cavity and cooperates with the periodic structure to generate Bragg scattering;
all materials are non-magnetic materials, i.e. have a relative permeability of 1.
Furthermore, silicon dioxide is used as a substrate material in the layer A and the layer C to dope quantum dots in different forms, so as to respectively form a gain medium material and a loss medium material.
Further, the electro-optic material of layer B employs 5mol% magnesium oxide doped lithium niobate, a typical electro-optic material whose refractive index varies with the applied electric field.
Further, the thickness of the layer A and the thickness of the layer C are kept equal, so that the refractive index in the structure is distributed near the designated working wavelength, and the PT symmetry condition is met.
Further, taking the thickness d of the layer A and the layer C A ＝d c =1870 nm; layer B can be considered as a resonant cavity between layers A and C, with a thickness d B The thickness adjustment of 675.95nm allows the incident wave to resonate in the B layer, which improves the intensity and produces stronger specificity phenomena when acting with gain and loss media.
Further, by observing the transmission spectrum line of the electric field sensor, the magnitude of the external electric field is adjusted, the structure can fall into the band gap in a longer wavelength range, and the magnitude of the electric field can be obtained by observing the height of the transmission peak value by utilizing the band edge mode existing at the edge of the band gap.
Further, the one-way reflection caused by the Bragg scattering of the electric field sensor structure can be compared with the reflectivity in the front and back directions to judge the direction of the electric field of the sensor.
The beneficial effect that this patent arrived does: under the combined action of Bragg scattering and a resonant cavity, the electric field sensor mainly structurally presents two special properties: band edge mode and one-way reflection phenomena. The band-edge mode produces a higher peak in the transmission spectrum of the structure, the height of which is related to the applied electric field. Based on the method, the corresponding relation between the magnitude of the external electric field and the height of the transmission peak is established, and the sensing of the electric field can be realized by measuring the transmittance of the structure. The unidirectional reflection phenomenon in the structure enables electromagnetic waves along different incidence directions to have different reflectivities. The directionality of which is affected by the direction of the external electric field and can therefore be used to determine the direction of the external electric field. Through analysis of the sensor design scheme, the scheme has extremely high sensitivity in a smaller electric field fluctuation range, and the transmittance change can reach 3000dB at most when the electric field changes by 1V/nm.
Drawings
Fig. 1 is a schematic structural diagram of an electric field sensor described in this patent.
Detailed Description
The technical scheme of the invention is further described in detail below with reference to the attached drawings.
A one-way reflection PT symmetrical structure electric field sensor adopts a periodic PT symmetrical structure, wherein each period sequentially consists of A, B, C three different medium layers, and the period number is equal to the period numberN, the whole structure can be used (ABC) N And (3) representing.
The layer A is made of gain medium material, the layer C is made of loss medium material, and the layer B is made of electro-optic material; the B layer in the structure acts as a resonant cavity, and cooperates with the periodic structure to produce bragg scattering.
All materials are non-magnetic materials, i.e. have a relative permeability of 1.
And the A layer and the C layer are doped with quantum dots in different forms by using silicon dioxide as a base material to respectively form a gain medium material and a loss medium material. The dielectric constant of A, C layers can be described using the lorentz model:
the electron relaxation rate γ=1×10 in the formula (1) 14 s -1 Oscillation frequency omega 0 ＝1.221×10 15 (corresponding to lambda) 0 = 1543.835 nm). For the base material SiO 2 Its dielectric constant epsilon h The relationship with the incident wavelength λ can be described by a Sellmeier dispersion relationship. The three wavelength points in the formula (1) are respectively lambda 1 ＝68nm、λ 2 ＝116nm、λ 3 Corresponding coefficients are C respectively = 9896nm 1 ＝0.7、C 2 ＝0.41、C 3 =0.9. For layer a, α= -1.8428 ×10 -3 Represents gain, and α= 1.8428 ×10 for C layers -3 Representing losses.
The electro-optic material of the B layer adopts 5mol percent magnesium oxide doped lithium niobate which is a typical electro-optic material, and the refractive index of the material can be along with an external electric field E ex And (3) a change. Due to LiNbO 3 Is a 3m symmetric lattice structure, and when an external electric field is applied in the z-axis direction, the refractive index ellipse of the medium can be expressed as:
due to LiNbO 3 Is a uniaxial crystal, n can be used o Representing refractive indices in the x and y directions, using n e Indicating the z-axis refractive index. Considering that the incident wave has only an electric field in the y direction, i.e. TE wave is incident, formula (3) can be simplified and the refractive index n of the B layer in formula (4) can be obtained B In the form of (1), where n B0 =2.286 corresponds to n in formula (3) e Electro-optic constant gamma 13 ＝8.6×10 - 12 m/V。
First, in order for the structure to exhibit unusual optical properties, the overall refractive index profile within the structure needs to meet or substantially meet PT symmetry conditions. On the other hand, in the case where the applied electric field is constant, the refractive index of the B layer is a fixed value and the imaginary part is 0 as shown in equation (4). On the other hand, the A, C layer medium can be known to take the opposite alpha value from the formula (1) to ensure n A And n C The imaginary parts of (a) always maintain the relationship of the opposite numbers. Therefore, the refractive index distribution in the structure is made to be near the designated working wavelength as long as the thickness of the layer A and the thickness of the layer C are kept equal, and the PT symmetry condition is satisfied.
Secondly, in order to enhance the special transmission phenomenon of the PT symmetrical structure, the thickness of each layer can be adjusted so that the calculation result of the transmission characteristic is optimal. Taking the thickness d of the layers A and C according to the oscillation frequency of the Lorentz model in the formula (1) A ＝d c =1870 nm; layer B can be considered as a resonant cavity between layers A and C, the thickness of which can be determined by the resonance enhancement condition n B d B ＝λ 0 Calculated, assume an applied electric field E ex =0, giving d B The thickness adjustment of 675.95nm allows the incident wave to resonate in the B layer, which improves the intensity and produces stronger specificity phenomena when acting with gain and loss media.
The size of the external electric field is regulated by observing the transmission spectrum line of the electric field sensor, the structure can fall into the band gap in a longer wavelength range, and the electric field size can be obtained by observing the height of the transmission peak value by utilizing the band edge mode existing at the edge of the band gap.
The PT symmetric structure has a gain or loss phenomenon at the band edge, and although the gain and loss medium are uniformly distributed in the structure, resonance in the structure causes different acting time between photons and the gain or loss medium, and when the acting time between photons and the gain medium is longer than that of the loss medium, the overall gain action on incident light is shown, and otherwise loss is shown. In addition, this phenomenon is most pronounced at the band gap edges, because the group velocity of the light waves in the structure is at a minimum, the time that photons react with gain, loss medium is also at a maximum, and the gain or loss phenomenon exhibited is also most pronounced. Specifically, the layer B in the structure acts as a resonant cavity, and is matched with the periodic structure to generate Bragg scattering, so that a plurality of singular transmission phenomena are generated. Therefore, the nature of the structure cycle number N and B layers has an important impact on the overall structure properties. Increasing the number of structural cycles to n=400 will result in a significant enhancement of the band-edge mode, while producing high transmission and reflection peaks with very narrow widths at the enhanced locations, which is the basis for realizing the sensor.
The electro-optic material in layer B truly relates the transmission properties of the structure to the magnitude of the external electric field. The higher the external electric field, the more left the highest transmission peak is, and the lower the height is, at the positive incidence of the external electric field. When the external electric field is reversely incident and the sign is negative, the external electric field direction is reversed, the transmission peak value is increased along with the increase of the electric field, and the position is gradually moved right. The electric field sensing is realized by observing the height of the transmission peak value of the structure to obtain the electric field size of the structure. The greatest advantage of such a sensing mechanism is that the process of peak position detection is dispensed with, and only the magnitude of the transmittance is detected, which is simpler in terms of reading of the sensed data. Meanwhile, the amplification effect of the PT symmetrical structure at the band gap edge is equivalent to that of the sensor with an amplifier, and a wider range is provided for the change of transmissivity.
The one-way reflection caused by the Bragg scattering of the electric field sensor structure can be compared with the reflectivity in the positive and negative directions to judge the direction of the electric field of the sensor.
The phenomenon of unidirectional reflection can be used for the judgment of the direction of the electric field because the directivity of unidirectional reflection is related to the direction of the electric field. In the case where the incident direction of the external electric field is opposite, the reflected wave energy is weakened in the normal direction, and in the reverse direction, the reflected wave energy is strengthened. The direction of the electric field where the sensor is located can be judged by comparing the reflectivity in the forward direction and the reverse direction.
The above description is merely of preferred embodiments of the present invention, and the scope of the present invention is not limited to the above embodiments, but all equivalent modifications or variations according to the present disclosure will be within the scope of the claims.
Claims (5)
1. A one-way reflection PT symmetrical structure electric field sensor is characterized in that:
the electric field sensor adopts a periodic PT symmetrical structure, wherein each period is sequentially composed of A, B, C three different dielectric layers, the period number is N, and the whole structure can be used (ABC) N A representation; the cycle number of the structure is N=400, the band edge mode is enhanced, and high transmission and reflection peaks with narrow width appear at the enhanced position;
the layer A is made of gain medium material, the layer C is made of loss medium material, and the layer B is made of electro-optic material; the layer B in the structure acts as a resonant cavity and cooperates with the periodic structure to generate Bragg scattering;
all materials are non-magnetic materials, namely the relative magnetic permeability is 1;
in layers a and C, the dielectric constant of A, C layers was described using the lorentz model:
the electron relaxation rate γ=1×10 in the formula (1) 14 s -1 Oscillation frequency omega 0 ＝1.221×10 15 Corresponding to lambda 0 Substrate material electrical constant ε = 1543.835nm h The relationship with the incident wavelength λ can be described by a Sellmeier dispersion relationship;
three wavelength points are respectively lambda 1 ＝68nm、λ 2 ＝116nm、λ 3 Corresponding coefficients are C respectively = 9896nm 1 ＝0.7、C 2 ＝0.41、C 3 =0.9; for layer a, α= -1.8428 ×10 -3 Represents gain, for C layers α= 1.8428 ×10 -3 Representing loss;
when the external electric field is incident in the forward direction and the sign is positive, the higher the external electric field is, the higher the highest transmission peak is moved leftwards, and the height is reduced; when the external electric field is reversely incident and the sign is negative, the direction of the external electric field is reversed, the transmission peak value is improved along with the increase of the electric field, and the position is gradually moved right;
the size of an external electric field is regulated by observing the transmission spectrum line of the electric field sensor, the structure can fall into a band gap in a longer wavelength range, and the size of the electric field is obtained by observing the height of a transmission peak value by utilizing a band edge mode existing at the edge of the band gap;
unidirectional reflection caused by Bragg scattering of the electric field sensor structure is compared with the reflectivity in the positive and negative directions to judge the direction of the electric field where the sensor is located.
2. The one-way reflection PT symmetrical structure electric field sensor of claim 1, wherein: and the A layer and the C layer are doped with quantum dots in different forms by using silicon dioxide as a base material to respectively form a gain medium material and a loss medium material.
3. The one-way reflection PT symmetrical structure electric field sensor of claim 1, wherein: the electro-optic material of layer B adopts 5mol percent magnesium oxide doped lithium niobate, which is a typical electro-optic material, and the refractive index of the electro-optic material can change along with an applied electric field.
4. The one-way reflection PT symmetrical structure electric field sensor of claim 1, wherein: the thickness of the layer A and the thickness of the layer C are kept equal, so that the refractive index in the structure is distributed near the designated working wavelength, and the PT symmetry condition is met.
5. The one-way reflection PT symmetrical structure electric field sensor of claim 1, wherein: taking the thickness d of the layer A and the layer C A ＝d c =1870 nm; layer B can be considered as a resonant cavity between layers A and C, with a thickness d B The thickness adjustment of 675.95nm allows the incident wave to resonate in the B layer, which improves the intensity and produces stronger specificity phenomena when acting with gain and loss media.
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| CN112985635B (en) * | 2021-03-17 | 2021-12-21 | 哈尔滨工程大学 | Wireless temperature sensor based on PT symmetry |
| CN112964679B (en) * | 2021-03-17 | 2022-02-01 | 哈尔滨工程大学 | Gas concentration sensor based on PT symmetrical structure |
| CN114002515B (en) * | 2021-12-31 | 2022-04-05 | 南京高华科技股份有限公司 | Electric field sensor and preparation method thereof |
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