CN111952395B - Visible light and infrared dual-waveband light transport pipe detector and preparation method thereof - Google Patents
Visible light and infrared dual-waveband light transport pipe detector and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a preparation method of a visible light and infrared dual-band light transport pipe detector, which comprises the following steps: preparing a metal nanosphere array on the water surface; placing the Ge substrate in water, and extracting the Ge substrate loaded with the metal nanosphere array; carrying out vacuum annealing treatment on the Ge substrate carrying the metal nanosphere array to obtain a stacked Ge substrate and the metal nanosphere array; growing SiO on one side of Ge substrate with metal nanosphere array 2 Material derived SiO 2 A layer; in SiO 2 Preparation of MoS on layer 2 A layer; in MoS 2 Preparing a first front electrode and a second front electrode on the layer; and preparing a back electrode on the lower surface of the Ge substrate. The invention has the advantages of enhanced infrared detection responsivity, enhanced low-power infrared detection capability, enhanced red light wave band absorption capability, simple nanosphere transfer process and the like, thereby effectively improving the responsivity of the infrared wave band, reducing the manufacturing difficulty and reducing the manufacturing cost.
Description
Technical Field
The invention belongs to the technical field of detectors, and particularly relates to a visible light and infrared dual-band light transport tube detector and a preparation method thereof.
Background
In the field of optical detection, the responsivity of a detector is always one of important indexes for measuring the performance of the detector. Especially in the case of weak light, the higher the responsivity, which is the ratio of the average output current Ip of the photoelectric converter to the average input power Po of the photoelectric converter, i.e. the ratio of the output electrical signal current to the input electrical signal power, is expressed by the formula: r = Ip/Po in units of a/W.
Detectors that currently achieve high responsivity include avalanche photodetectors, photoconductive detectors, and light transport tube detectors. But besides the responsivity of the detector, the realization of a multiband detection function is also an important standard for measuring the performance of the detector. The multi-band detection is a function of realizing detection of two or more bands on the same detector. Information of different wave bands is synthesized, the information transmission speed can be effectively improved, and the detection accuracy is improved. Currently available detectors that can implement multiple bands include heterojunction detectors and schottky detectors.
When the prior art is compatible with high responsivity and multiband detection, the full high responsivity of multiband cannot be realized, the high responsivity of single waveband can only be realized, and the improvement of the performance and the function of the detector is limited.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a visible light and infrared dual-band light transport tube detector and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
a preparation method of a visible light and infrared dual-waveband light transport pipe detector comprises the following steps:
preparing a metal nanosphere array arranged in a preset manner on the water surface;
placing a Ge substrate in the water, and extracting the Ge substrate loaded with the metal nanosphere array;
carrying out vacuum annealing treatment on the Ge substrate bearing the metal nanosphere array to obtain the Ge substrate and the metal nanosphere array which are arranged in a stacked mode;
growing SiO on one side of the Ge substrate with the metal nanosphere array 2 Material up to said SiO 2 Completely coating the metal nanosphere array with a material to obtain SiO 2 A layer;
in the SiO 2 Preparation of MoS on layer 2 A layer;
in the MoS 2 Preparing a first front electrode and a second front electrode on the layer;
and preparing a back electrode on the lower surface of the Ge substrate.
In one embodiment of the present invention, an array of metal nanospheres arranged in a predetermined manner is prepared on the surface of water, comprising:
inverting the mixed solution of the nanospheres and the water in a culture dish;
adding n-butanol into the culture dish to form a water and n-butanol interface;
after waiting for a preset time, forming a metal nanosphere array arranged according to the preset mode between the water and the n-butanol at the formed water and n-butanol interface;
and extracting the n-butanol, and preparing the metal nanosphere array arranged according to the preset mode on the water surface.
In one embodiment of the present invention, placing a Ge substrate in the water and extracting the Ge substrate carrying the array of metal nanospheres comprises:
selecting the Ge substrate;
chemically cleaning the Ge substrate by using a chemical reagent;
and placing the Ge substrate in the water, and extracting the Ge substrate carrying the metal nanosphere array.
In an embodiment of the present invention, performing vacuum annealing on the Ge substrate carrying the metal nanosphere array to obtain the stacked Ge substrate and the metal nanosphere array, includes:
and carrying out vacuum annealing treatment on the Ge substrate carrying the metal nanosphere array at the temperature of 200-400 ℃ to obtain the Ge substrate and the metal nanosphere array which are arranged in a stacked mode.
In one embodiment of the invention, siO is grown on one side of the Ge substrate with the metal nanosphere array 2 Material up to said SiO 2 Completely coating the metal nanosphere array with a material to obtain SiO 2 A layer, comprising:
growing SiO on the Ge substrate by using a reduced pressure chemical vapor deposition method 2 Material up to said SiO 2 The metal nanosphere array is completely coated by a material;
to grow SiO 2 Carrying out vacuum annealing treatment on the Ge substrate of the material to obtain the SiO 2 And (3) a layer.
In one embodiment of the invention, in the SiO 2 Preparation of MoS on layer 2 A layer, comprising:
MoS (MoS) sticking by using special adhesive tape for two-dimensional material 2 A material;
will be adhered with MoS 2 Two-dimensional material-specific adhesive tape of material is adhered to the SiO 2 On the layer of SiO 2 Preparation of MoS on layer 2 And (3) a layer.
In one embodiment of the present invention, in the MoS 2 Preparing a first front electrode and a second front electrode on the layer, including:
in the MoS 2 Spin-coating photoresist on the layer;
spin coating the MoS of the photoresist 2 Exposing, developing and fixing the layer;
the MoS at development completion 2 Performing a front electrode material evaporation process on the layer to form a MoS 2 Preparing a first front electrode and a second front electrode on the layer;
and stripping the redundant photoresist and the front electrode material.
In one embodiment of the present invention, preparing a back electrode on the lower surface of the Ge substrate comprises:
and carrying out evaporation treatment on a back electrode material on the lower surface of the Ge substrate so as to prepare a back electrode on the lower surface of the Ge substrate.
In one embodiment of the present invention, the metal nanosphere array is an Au nanosphere array, an Ag nanosphere array, or a Pt nanosphere array.
An embodiment of the present invention further provides a visible light and infrared dual-band light transport tube detector, which is manufactured by the method for manufacturing a visible light and infrared dual-band light transport tube detector according to any one of the embodiments, and the visible light and infrared dual-band light transport tube detector includes:
a back electrode;
a Ge substrate located over the back electrode;
a metal nanosphere array located over the Ge substrate;
SiO 2 a layer over the Ge substrate and the array of metal nanospheres, and the SiO 2 Coating the metal nanosphere array;
MoS 2 layer on the SiO 2 A layer above;
a first front electrode and a second front electrode both located at the MoS 2 Over the layer.
The invention has the beneficial effects that:
the invention utilizes the growth of SiO on the Ge substrate transferred by nanospheres 2 Thereby obtaining an SOI substrate, and performing MoS on the SOI substrate 2 Transfer of material and electrode evaporation to obtain MoS 2 Compared with the common structure, the light transport pipe has the advantages of enhanced infrared detection responsivity, enhanced low-power infrared detection capability, enhanced red light waveband absorption capability, simple nanosphere transfer process and the like, thereby effectively improving the responsivity of the infrared waveband, reducing the manufacturing difficulty and reducing the manufacturing cost.
The present invention will be described in further detail with reference to the drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of an optical transport tube provided in the prior art;
FIG. 2 is a schematic diagram of another prior art light pipe;
fig. 3 is a schematic flow chart of a visible light and infrared dual-band light transportation pipe detector according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a visible light and infrared dual-band light transportation tube detector according to an embodiment of the present invention.
Description of reference numerals:
a back electrode-10; a Ge substrate-20; metal nanosphere array-30; siO 2 2 Layer-40; moS 2 Layer-50; a first front electrode-60; a second front electrode-70; a first Cr layer-101; a first Au layer-102; a second Cr layer-601; a second Au layer-602; a third Cr layer-701; a third Au layer-702.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to FIG. 1, FIG. 1 is a schematic diagram of a prior art optical transport tube for preparing MoS on GeOI 2 The light transport tube is a detector capable of realizing high responsivity and multiband detection, and the circuit structure of the light transport tube consists of a source electrode, a drain electrode and a grid electrode. When the detector detects visible light, incident light is in MoS 2 The internally generated photon-generated carriers are output through the source and drain electrodes, and the modulation of the photocurrent output by the source and drain electrodes can be realized by adjusting the voltage of the grid electrode, so that the effect of high responsivity of visible light is achieved. When the Ge substrate works in an infrared band, the accumulation of photon-generated carriers is generated on the Ge substrate, and the accumulated carriers can generate electric potential. The potential modulates the grid voltage, thereby influencing the output of source-drain current and realizing the detection of an infrared band. However, the light transport tube in fig. 1 has the disadvantages of low responsivity in the infrared light band, weak low-power infrared light detection capability, and the like.
Referring to fig. 2, fig. 2 is a schematic structural diagram of another optical transport tube provided in the prior art, based on MoS of Au nanowire plasmon resonance 2 The light transport pipe detector is a dual-band detector capable of realizing visible light and infrared light band detection. When the detector is operated in the visible light bandIncident light at MoS 2 Internally generated photon-generated carriers are output through the electrodes and are aligned to MoS by utilizing grid voltage 2 The carrier mobility of the light source is modulated to realize visible light detection with high responsivity. When the nano-Au film works in an infrared band, light is absorbed by the nano-Au wires to generate electrons, and the electrons cross MoS 2 The potential barrier between the Au nanowire and the Au nanowire enters MoS 2 In the step (b), the output is realized through an electrode, and the gate voltage is utilized to MoS 2 The carrier mobility of (a) is modulated to enable relatively highly responsive detection. However, the light transport tube in fig. 2 has the disadvantages of high manufacturing cost, complex process, weak low-power infrared light detection capability, low relative stability during hot carrier injection, poor stability of infrared light detection performance, and the like.
Therefore, referring to fig. 3 and fig. 4, fig. 3 is a schematic flow chart of a visible light and infrared dual-band light-transmitting pipe detector according to an embodiment of the present invention, and fig. 4 is a schematic structural diagram of the visible light and infrared dual-band light-transmitting pipe detector according to the embodiment of the present invention. The embodiment provides a preparation method of a visible light and infrared dual-band light transport pipe detector, which comprises the following steps:
step 1, preparing a metal nanosphere array 30 arranged in a preset manner on the water surface.
Step 1.1, inverting the mixed solution of the nanospheres and the water in a culture dish.
Specifically, the nanospheres are nano-scale spheres, and a plurality of nanospheres required to form the metal nanosphere array 30 are first placed in water to form a nanosphere-water mixed solution, and then the nanosphere-water mixed solution is gently inverted in a culture dish.
Further, the nanosphere may be any one of Au nanosphere, ag nanosphere and Pt nanosphere.
Step 1.2, adding n-butanol into a culture dish to form a water and n-butanol interface.
Specifically, n-butanol is rapidly added into a culture dish loaded with a mixed solution of nanospheres and water, so that a water-n-butanol interface can be formed, namely the n-butanol is positioned above the water interface.
And 1.3, forming a metal nanosphere array 30 arranged in a preset mode between the interfaces of water and n-butanol after waiting for a preset time.
Specifically, after waiting for the preset time, the nanospheres are arranged between water and n-butanol according to a preset mode, so as to form the metal nanosphere array 30, the preset time can be set according to actual needs, for example, 10-20min, preferably, the preset time is 15min, the preset mode is that the nanospheres in the metal nanosphere array 30 are located in the same layer and no gap exists between two adjacent nanospheres, the preset mode can also be that the nanospheres in the metal nanosphere array 30 are located in the same layer and are arranged at intervals between two adjacent nanospheres, and the distance between two adjacent nanospheres can be adjusted according to the length of the preset time.
Step 1.4, extracting n-butanol, and preparing a metal nanosphere array 30 arranged according to a preset mode on the water surface.
Specifically, n-butanol in the culture dish is extracted, and then the metal nanosphere array 30 arranged in a predetermined manner can be prepared on the water surface at this time.
Further, the metal nanosphere array 30 is an Au nanosphere array, an Ag nanosphere array or a Pt nanosphere array, and the light transport tube detector prepared by using the Au nanosphere array, the Ag nanosphere array and the Pt nanosphere array can detect visible light and infrared light wave bands.
And 2, placing the Ge substrate 20 in water, and extracting the Ge substrate 20 loaded with the metal nanosphere array 30.
And 2.1, selecting a Ge substrate 20.
Specifically, a high-resistance Ge substrate 20 for producing an SOI substrate is selected.
And 2.2, chemically cleaning the Ge substrate 20 by using a chemical reagent.
Specifically, the surface of the Ge substrate 20 is chemically cleaned, and a germanium oxide layer and surface impurities on the surface of the Ge substrate 20 are removed by using a chemical agent, such as hydrochloric acid.
And 2.3, placing the Ge substrate 20 in the water, and extracting the Ge substrate 20 loaded with the metal nanosphere array 30.
Specifically, firstly, the Ge substrate 20 is slid into the water with the metal nanosphere array 30, then the Ge substrate 20 is lifted, and the metal nanosphere array 30 is positioned on the Ge substrate 20 during extraction, so that the Ge substrate 20 bearing the metal nanosphere array 30 can be obtained after extraction.
And 3, carrying out vacuum annealing treatment on the Ge substrate 20 carrying the metal nanosphere array 30 to obtain the Ge substrate 20 and the metal nanosphere array 30 which are arranged in a stacked mode.
Specifically, the Ge substrate 20 transferred with the metal nanosphere array 30 is subjected to vacuum annealing, so that nanospheres in the metal nanosphere array 30 can be better combined with the Ge substrate 20, the stable metal nanosphere array 30 and the Ge substrate 20 can be obtained, and meanwhile, residual water and n-butanol can be removed through evaporation in the vacuum annealing treatment process.
Preferably, the vacuum annealing temperature may be 200 to 400 ℃, and the annealing time is 5min, and it should be noted that the vacuum annealing conditions in this embodiment are only required to meet the requirements, and this embodiment is not particularly limited thereto.
Step 4, growing SiO on one surface of the Ge substrate 20 with the metal nanosphere array 30 2 Material up to SiO 2 The metal nanosphere array 30 is completely coated with the material to obtain SiO 2 Layer 40.
Step 4.1 growing SiO on Ge substrate 20 by reduced pressure chemical vapor deposition 2 Materials up to SiO 2 The material completely encapsulates the array of metal nanospheres 30.
Specifically, the metal nanosphere array 30 and the Ge substrate 20 after the vacuum annealing treatment are placed in a reduced pressure chemical vapor deposition device, and then a reduced pressure chemical vapor deposition (PECVD) method is used for growing SiO on the Ge substrate 20 2 Materials up to SiO 2 The material completely coats the nanospheres in the metal nanosphere array 30, and the grown SiO 2 The surface of the material is planar.
Step 4.2, growing SiO 2 The Ge substrate 20 of material is vacuum annealedTreating to obtain SiO 2 A layer 40.
Specifically, siO will grow well 2 The Ge substrate 20 of the material is placed in a vacuum annealing apparatus for vacuum annealing treatment, whereby SiO can be enhanced 2 Crystal quality, and SiO can be obtained after vacuum annealing treatment 2 Layer 40, whereby the fabrication of the SOI substrate may be completed.
Preferably, the vacuum annealing temperature may be 200 to 400 ℃, and the annealing time is 5min, and it should be noted that the vacuum annealing conditions in this embodiment are only required to meet the requirements, and this embodiment is not particularly limited thereto.
Step 5, in SiO 2 Preparation of MoS on layer 40 2 A layer 50.
Step 5.1, sticking MoS by using special adhesive tape for two-dimensional material 2 A material.
In particular, moS 2 A two-dimensional material has a forbidden band width of 1.36eV, has high carrier mobility, and can repeatedly pick up a certain amount of MoS by using a special adhesive tape for the two-dimensional material 2 A material, such as a two-dimensional material-specific adhesive tape, for example, a mechanical peel-specific adhesive tape.
Step 5.2, sticking MoS 2 Two-dimensional material special adhesive tape for adhering materials to SiO 2 On layer 40 to be in SiO 2 Preparation of MoS on layer 40 2 A layer 50.
Specifically, moS will be adhered to 2 Two-dimensional material-dedicated adhesive tape of material is adhered to SiO of SOI substrate 2 On the layer 40, after a certain period of time (for example two hours), the adhesion of the two-dimensional material-specific adhesive tape disappears, moS 2 The material can be stabilized SiO 2 On the layer 40, a robust SiO-based layer can then be produced 2 MoS on layer 40 2 A layer 50.
Step 6, in MoS 2 A first front electrode 60 and a second front electrode 70 are prepared on the layer 50.
Step 6.1 at MoS 2 Layer 50 is spin coated with photoresist.
Preferably, the photoresist is, for example, PMMA2 (polymethyl methacrylate), and the speed of spin coating the photoresist is, for example, 4000rad/s for 30s.
Step 6.2, moS of the photoresist is coated in a spinning mode 2 Layer 50 is exposed, developed and fixed.
Specifically, moS on SOI with photoresist spin-coated 2 The layer 50 is subjected to electron exposure and developed with acetone and isopropanol for 100s, and then fixed with acetone for 90 s.
Step 6.3 on completely developed MoS 2 The front electrode material is deposited on the layer 50 to form a MoS 2 A first front electrode 60 and a second front electrode 70 are prepared on the layer 50.
In particular, if the front electrode material is, for example, cr and Au, then the complete MoS can be developed first 2 Cr is deposited on the layer 50 to a thickness of, for example, 2nm, and then Au is deposited on the Cr to a thickness of, for example, 100nm, thereby obtaining a first front electrode 60 and a second front electrode 70, respectively, the first front electrode 60 including a second Cr layer 601 and a second Au layer 602, the second Cr layer 601 being located at MoS 2 Above the layer 50, a second Au layer 602 is located on the second Cr layer 601, the second front electrode 70 comprises a third Cr layer 701 and a third Au layer 702, the third Cr layer 701 is located on MoS 2 A third Au layer 702 is on top of the layer 50 above the third Cr layer 701.
And 6.4, stripping the redundant photoresist and the front electrode material.
Specifically, stripping is performed in an acetone solution to strip off the photoresist and the front electrode material except for the positions of the first front electrode 60 and the second front electrode 70, ultrasound can be moderately increased according to the stripping condition, the stripping effect can be improved, and finally the MoS is prepared 2 A first front side electrode 60 and a second front side electrode 70 on the layer 50.
And 7, preparing a back electrode 10 on the lower surface of the Ge substrate 20.
Specifically, if the material of the back electrode 10 is, for example, cr and Au, cr may be first deposited on the lower surface of the Ge substrate 20 to form a first Cr layer 101, the first Cr layer 101 having a thickness of, for example, 2nm, and Au may be then deposited on the lower surface of the first Cr layer 101 to form a first Au layer 102, the first Au layer 102 having a thickness of, for example, 100nm, to obtain the back electrodes 10, respectivelyThis results in MoS on SOI 2 A light delivery tube.
The preparation method can reduce the process difficulty, the nanospheres are suspended on the liquid surface, the nanospheres are in compact hexagonal arrangement due to the existence of surface tension, and the metal nanosphere array 30 can be well transferred from the liquid surface to the substrate surface by fishing the Ge substrate.
The preparation method of the invention has low cost, and compared with the nanowire periodic array, the consumption of the metal nanosphere array material is less, and meanwhile, compared with the formation of the nanowire array, the process steps omit the processes of photoetching, au film evaporation, stripping and the like, thereby reducing the manufacturing cost.
The light transport tube detector prepared by the preparation method has strong infrared light detection capability, and is relatively to MoS on the traditional GeOI 2 The photo-generated carriers generated by infrared light of the light transport tube detector are concentrated on the lower surface of the gate oxide layer, so that the influence on the channel carrier mobility is greater, and the infrared detection capability is stronger.
The infrared detection performance of the optical transport tube detector is stable, and Ge absorbs infrared light to generate carriers which cross MoS relative to the carriers 2 The infrared detection is more stable by the potential barrier with Au, and MoS is overcome 2 And interface states and the like brought between the detector and Au improve the stability of the detector.
The metal nanosphere array 30 and the substrate of the light transport tube detector of the invention can generate plasma resonance, the absorption of infrared light wave band is enhanced, and the nanospheres in the metal nanosphere array 30 have selectivity to the wavelength of the plasma resonance in size and period.
Example two
Referring to fig. 4 again, the present embodiment further provides a visible light and infrared dual-band optical transmission pipe detector based on the above embodiment, where the visible light and infrared dual-band optical transmission pipe detector is prepared by the preparation method of the above embodiment, and the optical transmission pipe detector includes:
a back electrode 10;
a Ge substrate 20 located over the back electrode 10;
a metal nanosphere array 30 located above the Ge substrate 20;
SiO 2 a layer 40 of SiO overlying the Ge substrate 20 and the array of metal nanospheres 30 2 The layer 40 coats the metal nanosphere array 30;
MoS 2 layer 50 on SiO 2 Over the layer 40;
a first front electrode 60 and a second front electrode 70, both located at the MoS 2 Above layer 50.
Further, the back electrode 10 includes a first Cr layer 101 and a first Au layer 102, wherein the first Cr layer 101 is located on the first Au layer 102, and the Ge substrate 20 is located on the first Cr layer 1.
Further, the first front electrode 60 comprises a second Cr layer 601 and a second Au layer 602, the second Cr layer 601 being located at MoS 2 Above layer 50, a second Au layer 602 is located above a second Cr layer 601.
Further, the second front electrode 70 comprises a third Cr layer 701 and a third Au layer 702, the third Cr layer 701 being located at MoS 2 A third Au layer 702 is located on top of the third Cr layer 701 above layer 50.
The light transport tube detector has strong infrared light detection capability, and is higher than MoS on the traditional GeOI 2 The photo-generated carriers generated by infrared light of the light transport tube detector are concentrated on the lower surface of the gate oxide layer, so that the influence on the channel carrier mobility is greater, and the infrared detection capability is stronger.
The infrared detection performance of the optical transport tube detector is stable, and Ge absorbs infrared light to generate carriers which cross MoS relative to the carriers 2 The infrared detection is more stable by the potential barrier of Au, and MoS is overcome 2 And interface states and the like brought between the detector and Au improve the stability of the detector.
The metal nanosphere array and the substrate of the light transport tube detector can generate plasma resonance, the absorption of infrared light wave band is enhanced, and the nanospheres in the metal nanosphere array have selectivity on the wavelength of the plasma resonance in size and period.
In the description of the present invention, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to imply that the number of technical features indicated is significant. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless expressly stated or limited otherwise, the recitation of a first feature "on" or "under" a second feature may include the recitation of the first and second features being in direct contact, and may also include the recitation that the first and second features are not in direct contact, but are in contact via another feature between them. Also, the first feature "on," "above" and "over" the second feature may include the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is at a higher level than the second feature. "beneath," "under" and "beneath" a first feature includes the first feature being directly beneath and obliquely beneath the second feature, or simply indicating that the first feature is at a lesser elevation than the second feature.
In the description of the present specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic data point described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a further detailed description of the invention in connection with specific preferred embodiments and it is not intended to limit the invention to the specific embodiments described. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A preparation method of a visible light and infrared dual-band light transport tube detector is characterized by comprising the following steps:
preparing a metal nanosphere array arranged according to a preset mode on the surface of water, wherein the preset mode is that nanospheres in the metal nanosphere array are positioned in the same layer, and no gap exists between every two adjacent nanospheres, or the nanospheres in the metal nanosphere array are positioned in the same layer and arranged at intervals between every two adjacent nanospheres;
placing the Ge substrate in the water, and extracting the Ge substrate bearing the metal nanosphere array;
carrying out vacuum annealing treatment on the Ge substrate bearing the metal nanosphere array to obtain the Ge substrate and the metal nanosphere array which are arranged in a stacked mode;
growing SiO on one side of the Ge substrate with the metal nanosphere array 2 Material up to said SiO 2 Completely coating the metal nanosphere array with a material to obtain SiO 2 A layer;
in the SiO 2 Preparation of MoS on layer 2 A layer;
in the MoS 2 Preparing a first front electrode and a second front electrode on the layer;
and preparing a back electrode on the lower surface of the Ge substrate.
2. The method of claim 1, wherein the preparing of the array of metal nanospheres arranged in a predetermined manner on the surface of water comprises:
inverting the mixed solution of the nanospheres and the water in a culture dish;
adding n-butanol into the culture dish to form a water and n-butanol interface;
after waiting for a preset time, forming a metal nanosphere array arranged according to the preset mode between the water and the n-butanol at the formed water and n-butanol interface;
and extracting the n-butanol, and preparing the metal nanosphere array arranged according to the preset mode on the water surface.
3. The method of claim 1 wherein placing a Ge substrate in said water and extracting the Ge substrate bearing said array of metal nanospheres comprises:
selecting the Ge substrate;
chemically cleaning the Ge substrate by using a chemical reagent;
and placing the Ge substrate in the water, and extracting the Ge substrate carrying the metal nanosphere array.
4. The method of claim 1, wherein the Ge substrate carrying the metal nanosphere array is vacuum annealed to obtain the stacked Ge substrate and metal nanosphere array, comprising:
and carrying out vacuum annealing treatment on the Ge substrate carrying the metal nanosphere array at the temperature of 200-400 ℃ to obtain the Ge substrate and the metal nanosphere array which are arranged in a stacked mode.
5. The method of claim 1, wherein a SiO growth is formed on a surface of the Ge substrate having the array of metal nanospheres 2 Material up to said SiO 2 Completely coating the metal nanosphere array with a material to obtain SiO 2 A layer, comprising:
growing SiO on the Ge substrate by using a reduced pressure chemical vapor deposition method 2 Material up to said SiO 2 The metal nanosphere array is completely coated by a material;
to grow SiO 2 Carrying out vacuum annealing treatment on the Ge substrate of the material to obtain the SiO 2 And (3) a layer.
6. The visible and infrared of claim 1 a method for preparing a dual-band optical transport tube detector, characterized in that the SiO 2 Preparation of MoS on layer 2 A layer, comprising:
MoS sticking by using special adhesive tape for two-dimensional material 2 A material;
will be adhered with MoS 2 Two-dimensional material-specific adhesive tape of material is adhered to the SiO 2 On the layer to the SiO 2 Preparation of MoS on layer 2 And (3) a layer.
7. The method of claim 1 wherein said MoS is a MoS device, and said method of making a visible and infrared dual band light pipe probe 2 Preparing a first front electrode and a second front electrode on the layer, including:
in the MoS 2 Spin-coating photoresist on the layer;
spin coating the MoS of the photoresist 2 Exposing, developing and fixing the layer;
the MoS at development completion 2 Performing a front electrode material evaporation process on the layer to form a MoS 2 Preparing a first front electrode and a second front electrode on the layer;
and stripping the redundant photoresist and the front electrode material.
8. The method of claim 1, wherein forming a backside electrode on a lower surface of the Ge substrate comprises:
and carrying out evaporation treatment on a back electrode material on the lower surface of the Ge substrate so as to prepare a back electrode on the lower surface of the Ge substrate.
9. The method of claim 1, wherein the metal nanosphere array is an Au nanosphere array, an Ag nanosphere array or a Pt nanosphere array.
10. A visible light and infrared dual band optical transport tube detector prepared by the method of any one of claims 1 to 9, comprising:
a back electrode;
a Ge substrate located over the back electrode;
a metal nanosphere array located over the Ge substrate;
SiO 2 a layer over the Ge substrate and the array of metal nanospheres, and the SiO 2 Coating the metal nanosphere array;
MoS 2 layer on the SiO 2 A layer above;
a first front electrode and a second front electrode both located at the MoS 2 Over the layer.
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