CN106847952A - Infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type is near - Google Patents
Infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type is near Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention relates to a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type it is near in infrared double-color detector, the panel detector structure is the photovoltaic type photoelectric diode structure of PIN or NIP structures, wherein using three-dimensional Ge quantum dots crystal as light absorbs area.The present invention forms strong near-infrared and middle-infrared band light absorbs using the efficient ground state micro-strip band-to-band transition and valence band micro-strip intersubband transitions in three-dimensional Ge quantum dot crystal, so as to realize the highly effective two-color detection to nearly middle-infrared band simultaneously, it is with a wide range of applications in infrared electronic technology field.
Description
Technical field
The invention belongs to semiconductor infrared detection material and devices field, more particularly to a kind of Si bases three-dimensional Ge quantum dots are brilliant
Infrared double-color detector during body photovoltaic type is near.
Background technology
Because earth atmosphere environment has specific strong absorption bands to infrared ray, therefore only wavelength is in 1-2.5 μm, 3-
Infra-red radiation between 5 μm and 8-14 μm of three wave bands could effectively be transmitted and detected in atmospheric environment.These three ripples
Section namely so-called near-infrared, in infrared and three atmospheric windows of far infrared.Traditional Infrared Detectors, such as short-wave infrared
InGaAs, medium-wave infrared InSb, LONG WAVE INFRARED HgCdTe etc., although can be by being prepared into PIN photovoltaic types, guide type and snowslide
The structures such as type provide enhanced detectivity, but the detection optical band of its each detector can only all cover one respectively
Infrared atmospheric window mouthful, that is, belong to monochromatic Infrared Detectors.And Two-color Infrared Detectors, refer to a class its detection wavelength can be simultaneously
Covering two infrared photoelectric detectors of infrared window, can synchronous acquisition target in two spectral informations of infrared band.It is aobvious
And be clear to, double-color detector measurement more than monochromatic probe device is measured.In infrared imaging application, double color focus plane is visited
Surveying device can simultaneously obtain target in two images of infrared band, on the one hand can provide the target information of more horn of plenty, separately
On the one hand can effectively reduce because detector mismatches the failure detection probability for causing with target emanation wave band to be measured.Especially
In the military target field of detecting such as Aero-Space, the double-colored information of Infrared Targets acquired in Two-color Infrared Detectors is multiple to realizing
The applications such as the background suppression in heterocycle border, the false interference signal of exclusion and target identification differentiation have significant advantage.
Current existing infrared double-color detector mainly has two classes, and a class is encapsulated simultaneously by an encapsulating structure
Two kinds of sensitive detection parts of infrared band, and be coupled by optical texture, realize the dual-color detection to target.Its essence is
Two kinds of assembled packages of detector, such as shortwave/medium wave Si/PbSe photovoltaics of Song Bin electronics corporations of Japan (Hamamatsu, Inc.)
Type Two-color Infrared Detectors (0.2-4.8 μm), the infrared company of American Association (InfraRed Associates, Inc.) medium wave/
Long wave InSb/HgCdTe photovoltaic type double-color detectors etc..It is another kind of, be developed based on new material and new device structure
Realized to two kinds of photoresponses of infrared band, such as shortwave/medium wave that Chinese Academy of Sciences's Shanghai skill thing is developed simultaneously in one photosensitive unit
HgCdTe photovoltaic types infrared double-color detector (1.3-5.7 μm), the shortwave/shortwave extension InGaAs of Song Bin electronics corporations of Japan
Photovoltaic type double-color detector (0.9-2.5 μm) etc..IRDS generally needs to carry out light-sensitive element and reading circuit
Match somebody with somebody, to extract effective signal and be processed.Above-mentioned first kind assembled package type double-color detector is usual in signal-obtaining
By the way of sequentially reading, the transfer process of the infrared electro signal of two wave bands must rotation carry out；And Equations of The Second Kind monochromatic light is quick
First type double-color detector can then be carried out in the way of synchronously reading, i.e. the conversion of the infrared electro signal of two wave bands can enter simultaneously
OK, can really ensure that the signal of two wave bands does not have the time difference, is truly realized synchronization.Therefore the quick first type dual-color detection of monochromatic light is developed
Device is more beneficial for the Effect on Detecting of raising system.
The Two-color Infrared Detectors product of current main flow is using III-V compound semiconductor material or using Si knots
Close III-V group semi-conductor material be made, although device have high-quantum efficiency and highly sensitive advantage, there is also material into
The deficiencies such as this height, preparation difficulty.Additionally, almost all of infrared focal plane read-out circuit is Si base integrated circuits at present, and
The photosensitive unit of iii-v cannot directly be carried out with Si it is integrated on piece, therefore need to using indium bump bonding encapsulation etc. technology by photosensitive unit with
Si reading circuits carry out coupling and could realize imaging applications.It can be seen that, if can develop using Si in itself or with Si material technologies
On the one hand the compatible photosensitive unit of infrared double-color detector, then can utilize the ripe advantage of Si material storages high technology, significantly drop
The manufacturing cost of low detector.The opposing party is then due to the inherent advantage compatible with Si reading circuits, can really realize piece
Upper integrated high uniformity large area focal plane arrays (FPA).Additionally, overwhelming majority III-V and II-VI group detector generally have height
Dark current so that coordinate refrigeration part could work, and Si bases detector generally have low-dark current, can working and room temperature
Advantage, reduce to the demand of refrigeration part.Therefore, Si bases Two-color Infrared Detectors will have wide in infrared electronic technology field
General application prospect.
The content of the invention
The technical problems to be solved by the invention be to provide a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaic types it is near in it is infrared
Double-color detector, the detector is using the efficient ground state micro-strip band-to-band transition and valence band micro-strip subband in three-dimensional Ge quantum dot crystal
Between transition form strong near-infrared and middle-infrared band light absorbs, so as to realize visiting the highly effective two-color of nearly middle-infrared band simultaneously
Survey, be with a wide range of applications in infrared electronic technology field.
Infrared double-color detector, the detector knot during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type of the invention is near
Structure is the photovoltaic type photoelectric diode structure of PIN or NIP structures, wherein using three-dimensional Ge quantum dots crystal as light absorbs area.
Three-dimensional Ge quantum dots crystal is the I areas of low doping concentration in the detector, and P areas and N areas are high-dopant concentration
Si layers, device working bias voltage be 0 to -5V.
The low doping concentration is specially less than 1 × 1018cm-3；The high-dopant concentration is specially and is not less than 1 ×
1018cm-3。
In the three-dimensional Ge quantum dots crystal, Ge quantum dots perpendicular and parallel have along hanging down in substrate surface both direction
Sequence is arranged.
In the three-dimensional Ge quantum dots crystal, along and substrate surface vertical direction lower floor quantum dot distance from top last layer amount
The distance of son point bottom is not more than 10nm, is not more than along Ge quantum dot center adjacent with substrate surface parallel direction spacing
100nm。
The three-dimensional Ge quantum dots crystal includes N layers of orderly Ge quantum dots, wherein N >=2.
The panel detector structure is table top junction device structure or planar diffusion junction structure.
Infrared double-color detector during Si bases three-dimensional Ge quantum dot crystal photovoltaics type disclosed by the invention is near, is using with three
The low-doped three-dimensional Ge quantum dots crystal of strong electronic state coupling effect is tieed up as light absorbs area, the pole of PIN photovoltaic types photoelectricity two is prepared
Tubular construction.It is utilized respectively high efficiency ground state micro-strip band-to-band transition and valence band micro-strip intersubband transitions in three-dimensional Ge quantum dots crystal
Strong near-infrared and middle-infrared band light absorbs are formed, so as to realize the highly effective two-color detection to nearly middle-infrared band simultaneously.Category
In the quick first type double-color detector of monochromatic light.Particular content includes：
(1) the double-colored light absorbs of nearly middle-infrared band of three-dimensional Ge quantum dot crystal
Quantum dot is a kind of nanometer semiconductor structure of zero dimension, and the wave function motion in its internal electron and hole is in three-dimensional space
Between on be bound in several nanometers in the range of tens nanometer yardstick.According to Schrodinger equation, the energy of its internal carrier will
Quantization is presented, i.e., the inside of single quantum dot will appear from discrete energy levels, as shown in fig. 1 on the left-hand side.And quantum dot crystal, then it is one
The concept of individual complete same multi layered quantum dots assemblage.Forming three-dimensional quantum point crystal needs to meet following 4 conditions simultaneously：(i) quantum
Point periodicity ordered arrangement on space three-dimensional direction；(ii) component of each quantum dot, pattern are identical；(iii) measure
Sub- spot size is sufficiently small to form discrete quantized level to guarantee；(iv) adjacent quantum dot spacing is near enough, in three-dimensional side
There is the strong overlapping of current-carrying wavelet function upwards, form three-dimensional forceful electric power or hole state coupling.4 bars only meet simultaneously more than
The quantum dot ensemble of part can just be referred to as three-dimensional quantum point crystal.In quantum dot crystal, due between adjacent quantum dot away from
Close to enough, the current-carrying wavelet function inside respective quantum dot is strapped in originally the effect of localization will occurs, and be formed
The energy level of total extension.Atomic energy level communization that this characteristic can be analogous in solid atomic crystal and formed can band it is general
Read.This energy level communization in quantum dot crystal will ultimately form the new band structure with certain Energy Broadening, that is, carry
Sub- micro-strip (miniband) is flowed, as shown in Fig. 1 right sides.Micro-strip is formed such that the physical property and discrete nothing of quantum dot crystal
Coupling quantum spot system has dramatically different.Micro-strip has the dispersion relation and density-of-states distribution dramatically different with body materials band.
There is a maximum for the density of states in each micro-strip, i.e., in the presence of an energy state for the high density of states, can fill
Quantity exceeds well over the carrier of body material energy level.This is close with body material or the discrete Delta function kenels without coupling quantum spot
Degree is distributed with fundamental difference.Additionally, the formation of micro-strip, will significantly increase the band-to-band transition of the micro-strip correlation in quantum dot crystal
The intensity of (T1 in Fig. 1) or sub- intraband transition (T2 in Fig. 1) oscillator, significantly improves the light absorbs system corresponding to these energy level transitions
Number, therefore have important application value in photodetection field.
Si bases three-dimensional Ge quantum dot crystal, is a kind of three-dimensional Ge quantum dot ensembles for meeting said structure characteristic.Ge is measured
Sub Si layers put more than top and below bottom is due to the presence of strain so that the conduction band sixfold degeneracy energy valley of Si is cleaved,
Double degenerate energy valley Δ (2) with more low energy is generated, thus electronics is mainly tied to Ge quantum dots summit and bottom
In neighbouring Si layers, and hole is then mainly tied in Ge quantum dots, so as to form II- type band structures.Its band offsets
Valence band, about 600meV are primarily present in, much larger than its conduction band band rank.Typical Si base compressive strain Ge quantum dot sizes are 10- high
20nm, 40-80nm wide, are presented pyramid shape or dome-like.In three-dimensional Ge quantum dots crystal, the base of main generation electronics
The excitation state micro-strip of the ground state micro-strip and hole in state micro-strip and hole, the energy band diagram on the right side of Fig. 1 is illustrated.Its electron hole base
Light absorbs energy about 0.8eV or so produced by the band-to-band transition T1 of state micro-strip, corresponding peak absorbtivity wavelength is on 1.5 μm of left sides
The right side, produces near infrared band light absorbs.Produced by its hole ground state micro-strip to the sub- intraband transition T2 between excitation state micro-strip
Light absorbs energy about 0.35eV or so, corresponding peak wavelength produces middle-infrared band light absorbs at 3.5 μm or so.Due to this
Two kinds of transition are all the optical transition between micro-strip, can greatly promote the intensity of transition oscillator and then lift the absorption coefficient of light so that
It can be used for photodetector, and simultaneously in near-infrared and the sensitive photoresponse of middle-infrared band generation.
Infrared double-color detector during Si bases three-dimensional Ge quantum dot crystal photovoltaics type disclosed in this invention is near, is based on upper
State two kinds of transition light absorbs mechanism of three-dimensional Ge quantum dots crystals and realize, detecting band can simultaneously cover near-infrared 1-
2.5 μm of infrared 3-5 μm two infrared windows with, and detectivity high is provided.Additionally, detector of the invention still has Si
Detector generally has low-dark current this advantage, thus device can working and room temperature, without refrigeration, and can simultaneously realize spy high
Survey rate.Therefore, the double-color detector will have wide practical use in infrared electronic technology field.Its specific device architecture is such as
It is lower to be described in detail.
(2) Si bases three-dimensional Ge quantum dots crystal PIN photovoltaic type double-color detector structures
Device overall structure is photovoltaic type PIN photodiode structure, can be specifically then PIN by substrate to device surface
Or NIP structures, do not influence detector performance.For convenience of explanation, below by taking PIN structural as an example, to detector of the invention
Structure is described in detail, as shown in Figure 2.In semi-insulating or N-type heavy doping (N+) Si substrate surfaces, one layer one is prepared first
Determine the heavily doped N-type Si conductive layers of thickness, for forming the N areas of PN junction, while the contact electrode layer in N areas is used as, its doping
Concentration typically should be greater than 1 × 1018cm-3.On this basis, three-dimensional Ge quantum dot crystal light absorbing zone structures are prepared, comprising multilayer
The Ge quantum dots of the three-dimensional order arrangement of stacking, by certain thickness Si spacing layer separates between adjacent Ge quantum dot layers, specifically
Structure is as explained above.Overall " I " area (intrinsic region) saved as PN of the three-dimensional Ge quantum dots crystal light absorbing zone, but it is in reality
During prepared by border, because material preparation system inevitably has background impurities in itself, therefore the three-dimensional quantum point is brilliant
Body is integrally by with certain doping concentration.According to the difference of system, it may be likely to be n-type doping for p-type doping.But its
Doping concentration must be substantially less than the doping concentration of P areas and N areas Si contact layers, to form sufficiently wide depletion region, to ensure
The carrier drift under electric field can be made full use of to act on, form sufficiently high optical responsivity.For device performance stabilization, can pass through
P-type or n-type doping actively are carried out to three-dimensional Ge quantum dots crystal light absorbs area, its doping concentration should typically control less than 1 ×
1017cm-3.Reducing the doping concentration in light absorbs area helps to reduce the tunnelling dark current of impurity auxiliary, the detection of boost device
Rate.On the surface of three-dimensional Ge quantum dots crystal, the p-type Si cap layers of certain thickness heavy doping, the P for forming PN junction are prepared
Area, while as P region electrode contact layers.After the completion of prepared by material, by photoetching, table top, SiO are chemically or physically etched2Table top
The technique such as side wall passivation and electrode deposition stripping, can prepare mesa detector device architecture as shown in Figure 2.
Plane PIN Junction detector PIN device architecture can also be prepared into by ion implanting or planar diffusion technique.I.e. in three-dimensional
After the completion of prepared by Ge quantum dot crystal light absorbing zone, continuation prepares certain thickness undoped Si cap layers.Then by photoetching and
The mode of constituency Be foreign ion injections or Be atoms permeatings, p-type heavily doped region, and then shape are formed in the specific region of material
Into plane PN junction structure.But it is required that the depth of impurity injection or diffusion is no more than the Si cap layers thickness above quantum dot crystal, and
The Be impurity concentrations of diffusion region should typically be more than 1 × 1018cm-3
Beneficial effect
(1) the quick first type double-color detector structure of monochromatic light of the invention, it is infrared realized closely in same photosensitive unit simultaneously in
High sensitivity detection, the infrared electro signal conversion of two wave bands can be carried out synchronously, and the signal of two wave bands does not have the time difference, is conducive to
Lift the performance of detection system.
(2)) material of Si bases Ge quantum dot crystal double-color detectors of the present invention is simultaneous with Si CMOS technologies with device technology
Hold, the high uniformity large area focal plane arrays (FPA) of infrared double color imaging during manufacture is used for closely is especially suitable for, with Si reading circuit couplings
Close, really realize integrated on piece, the overall performance of lifting focal plane.
(3)) present invention is based on micro-strip transition mechanism, and Oscillator Strengthss are high, and the absorption coefficient of light is strong, and then infrared near
Wave band can provide optical responsivity high.
(4)) there is the present invention Si detectors generally to have low-dark current this advantage, device can working and room temperature, without
Extra refrigeration, and can simultaneously realize detectivity high.
(5)) Si, Ge material of the present invention is far above III-V and Group II-VI semiconductor material, its material in nature reserves
Prepare and device manufacturing process is more ripe, significantly reduce the manufacturing cost of detector.
Brief description of the drawings
Fig. 1 left figures be single quantum dot and its corresponding quantized level schematic diagram, right figure be three-dimensional quantum point crystal and
Its corresponding micro-strip band structure and transition schematic diagram of mechanism.
Fig. 2 is in N-type heavy doping (N+) the PIN light with three-dimensional Ge quantum dots crystal as light absorbing zone for preparing on Si substrates
The structural representation of volt type double-color detector.
Fig. 3 left figures are to be prepared in orderly Si nanometer holes graph substrate with three-dimensional Ge quantum dots crystal as light absorbing zone
The material structure schematic diagram of double-color detector, right figure is the near middle infrared double color of its corresponding lower actual measurement of the biass of -0.5V at room temperature
Response spectrum.
Specific embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention
Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content for having read instruction of the present invention, people in the art
Member can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited
Scope.
Embodiment 1
The purpose of the present embodiment is to prepare the three-dimensional Ge quantum dots that response wave length covers nearly middle-infrared band on a si substrate
Crystal double-color detector.The preparation of Ge quantum dot crystal is by being etched with nanometer hole Si (001) figure that sequential 2 D is arranged
On case substrate, realized using Ge quantum dot arrays orderly on molecular beam epitaxial growth three-dimensional.The face of Ge quantum dots
It is in order inside to be realized by the nanometer hole located growth of pre-etching, and in vertical direction is grown by multiple-level stack
When Ge quantum dots strain self alignment effect realize.Optimized by growth conditions, regulate and control the size of Ge quantum dots.By subtracting
The cycle of small nanometer hole realizes neighbour's close coupling of Ge quantum dots in face.It is spaced by reducing the Si between adjacent Ge quantum dot layers
Thickness degree, realizes the Ge quantum dot close couplings in vertical direction.By growing PIN structural, three-dimensional Ge quantum dots crystal is formed double
The device material structure of chromakey detector.The material structure of specific device is as shown in the left figure of accompanying drawing 3.Its structure is wrapped successively from the bottom to top
Containing following material：
(1) N-type heavy doping (N+) orderly Si nanometer hole graph substrates.500 μm of thickness, the Ω cm of resistivity 0.01.Nanometer
Hole depth 30nm, diameter 50nm.Hexangular ordered arrangement is presented.The nanometer hole cycle is 100nm.
(2) N-type heavy doping (N+) Si cushions.Thickness 50nm.Foreign atom is phosphorus (P), doping concentration 5 × 1018cm-3。
(3) the three-dimensional Ge quantum dots crystal light absorbs area of undoped, comprising 20 layers of orderly Ge quantum dots, concrete structure and chi
It is very little：Ge dot width 80nm, the spacing of adjacent quantum dot center to center is 100nm in face.Ge quantum dot height 4.5nm.
Si space layers between adjacent quantum dot layer are 10nm.Ge quantum dots summit is to the distance of upper strata Ge quantum dots bottom
2.5nm.The growth in whole three-dimensional Ge quantum dot crystal light absorbs area starts from the orderly Ge quantum dots of ground floor, terminates in the 20th layer and non-mixes
Miscellaneous 10nm Si walls.
(4) p-type heavy doping (P+) Si cap layers, thickness 500nm.Foreign atom is beryllium (Be), doping concentration 5 × 1018cm-3。
The preparation of orderly Si nanometer hole patterned substrates realizes that specific implementation process is such as using self-assembled nanometer ball lithographic technique
Under：
(1) using the polystyrene nanospheres suspension of a diameter of 100nm, in N+- Si (001) substrate surface is used from group
The method for filling arrangement forms the ordered nano ball array of Hexagonal Close-packed.
(2) in nanosphere array surface gold evaporation (Au) film 10nm.
(3) it is dipped to 10 hours in tetrahydrofuran solvent, dissolves and remove polystyrene nanospheres.Deionized water rinsing 10
Minute.
(4) in the KOH solution that mass concentration is 30%, corrode 2 minutes at room temperature, produce ordered nano hole.Deionization
Water is rinsed 10 minutes.
(5) it is immersed in KI:I2:HF(10g:2.5g:1%) 10 hours in solution, the Au and Au-SiOx of substrate surface are removed
Film.Deionization is rinsed 10 minutes.
The preparation of device material is grown using ultrahigh vacuum molecular beam epitaxy technique to be realized, specific growth course is as follows：
(1) using No. 1 liquid of standard and No. 2 liquid methods to orderly N+- Si (001) nanometer hole patterned substrate carries out Chemical cleaning,
It is placed into growth chamber.
(2) if in couple dry plate N+After-Si (001) ordered nano hole pattern lining carries out 860 DEG C of Dehydroepiandrosterone derivatives, given birth to by preparation
It is long to determine in N+The lining that width is highly the Ge quantum dots of 4.5nm for 80nm is grown on the patterned substrate of-Si (001) ordered nano hole
The growth conditions such as bottom temperature, Ge electron guns furnace temperature, Ge sedimentation rates, Ge deposit thickness；Respectively determine doping concentration be N-type 5 ×
1018cm-3With p-type 5 × 1018cm-3Si layers underlayer temperature, Si electron guns furnace temperature, the doping electron gun furnace temperature of Be and P, Si life
The growth conditions such as speed long.
(3) to 1 N+After-Si (001) ordered nano hole pattern lining carries out 860 DEG C of Dehydroepiandrosterone derivatives, obtained according to pregrown
The growth conditions for taking, growth above-mentioned material (1) to material (4) successively, the wherein three-dimensional Ge quantum dots crystal structure of material (3)
In growth course, doped source fender plate is not opened, i.e., do not use active doped growing, only exist background doped.Wherein Ge quantum
Spot size, deposition, Si space layers are all as described above.
(4) terminate growth after growth is finished, reduce underlayer temperature to less than 200 DEG C, take out epitaxial material.
Device material is prepared after finishing, and prepares the photosensitive unit of double-color detector using standard mesa detector technique, specifically
Implementation steps are as follows：
(1) spin coating photoresist, using standard ultraviolet photolithographic method exposure imaging, the circular detector table top of definition is a diameter of
500μm。
(2) using ICP-RIE dry etchings etching detector table top, it is etched to N+- Si substrate layers.
(3) SiO is deposited using ICP-CVD2Passivating film, thickness 300nm.
(4) spin coating photoresist, using standard ultraviolet photolithographic method exposure imaging, defines detector P areas and the contact of N region electrodes
Window.
(5) HF and NH is used4Mixed solution corrosion P areas and the N region electrode contact windows of F, the SiO at removal contact window2
Passivating film.
(6) spin coating photoresist, using standard ultraviolet photolithographic method exposure imaging, exposure detector P areas and N region electrodes are contacted
Window.
(7) Ti/Au electrodes are deposited with using electron beam evaporation, and use standard stripping process, remove photoresist.Obtain complete
Panel detector structure.Double-color detector is completed to prepare.
Double-color detector device is prepared after finishing, using FTIR infrared spectrum responses test system to prepared Si bases three
Dimension Ge quantum dot crystal double-color detectors are tested in the photoresponse of nearly middle-infrared band, verifying parts performance.Fig. 3 right figures are
The spectral response curve that double-color detector prepared by the present embodiment is surveyed at room temperature, is biased at -0.5V.Can see
Arrive, the response device wavelength of the present embodiment covers 1-6 μm, and at 1.4 μm of places of near-infrared there is peak at infrared 3.3 μm with respectively
Value response, is successfully realized the dual-color detection to nearly middle-infrared band.
Claims (7)
1. infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type is near, it is characterised in that：The detector
Structure is the photovoltaic type photoelectric diode structure of PIN or NIP structures, wherein using three-dimensional Ge quantum dots crystal as light absorbs area.
2. infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type according to claim 1 is near, its
It is characterised by：Three-dimensional Ge quantum dots crystal is the I areas of low doping concentration in the detector, and P areas and N areas are high-dopant concentration
Si layers, device working bias voltage be 0 to -5V.
3. infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type according to claim 2 is near, its
It is characterised by：The low doping concentration is specially less than 1 × 1018cm-3；The high-dopant concentration is specially and is not less than 1 ×
1018cm-3。
4. infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type according to claim 1 is near, its
It is characterised by：In the three-dimensional Ge quantum dots crystal, Ge quantum dots are perpendicular and parallel in equal in substrate surface both direction along hanging down
Ordered arrangement.
5. infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type according to claim 1 is near, its
It is characterised by：In the three-dimensional Ge quantum dots crystal, along and substrate surface vertical direction lower floor quantum dot distance from top last layer
The distance of quantum dot bottom is not more than 10nm, is not more than along Ge quantum dot center adjacent with substrate surface parallel direction spacing
100nm。
6. infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type according to claim 1 is near, its
It is characterised by：The three-dimensional Ge quantum dots crystal includes N layers of orderly Ge quantum dots, wherein N >=2.
7. infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type according to claim 1 is near, its
It is characterised by：The panel detector structure is table top junction device structure or planar diffusion junction structure.
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