CN1974837A - Prepn process of low temperature double ion beam sputtered multilayer Ge/Si film with self-organized Ge quantum dots - Google Patents
Prepn process of low temperature double ion beam sputtered multilayer Ge/Si film with self-organized Ge quantum dots Download PDFInfo
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Abstract
The preparation process of low temperature double ion beam sputtered multilayer Ge/Si film with self-organized Ge quantum dots adopts Ar as the work gas and two ion beam sputtering guns, and features that at the conditions of work chamber background pressure lower than 3.0x10<-4> Pa, the substrate temperature of 200-400 deg.c, and work gas (Ar) pressure of (1.0-4.0)x10<-2> Pa, Si space layer and Ge quantum dot layer are deposited alternately on the Si substrate material by means of double ion beam sputtering technology. The surface strain potential field effect the previous Ge quantum dot layer generates is utilized in realizing the ordered growth of the Ge quantum dots in the subsequent layer, and this raises the film surface smoothness and filming quality and results in multilayer Ge/Si film with self-organized Ge quantum dots in high density and homogeneous size and quantum size effect. The present invention is compatible with IC technology, low in production cost and easy for industrial production.
Description
Technical field
The present invention relates to a kind of preparation method of refrigeration mode near infrared photon detector thin-film material, is a kind of low cost, industrialized process for preparing of Ge quantum dot.
Background technology
Semiconductor-quantum-point is also referred to as semiconductor nano crystal grain, when promptly the size of nanocrystal is less than its exciton Bohr radius, is called quantum dot.The yardstick of quantum dot is between macroscopical solid and microcosmic atom, molecule.Can be used as when theory is calculated is " artificial atom ", and it has the entity structure of class atom, and has the accurate splitted level of quasi-molecule, is the popular research topic of current Condensed Matter Physics.For example the exciton Bohr radius of Ge is 23.6nm, when Ge nanocrystalline grain size during less than 23.6nm, promptly is called the Ge quantum dot.The typical sizes of quantum dot is 1～10nm, comprises several to up to ten thousand atoms.Because the motion of Charge carrier is subjected to three-dimensional restriction in quantum dot, semiconductor-quantum-point has lost the body material behavior, energy generation quantization, and its electronic structure can become splitted level by band by continuous, more approaches the feature of class atom.A quantum size effect that outstanding feature is exactly an electronic spectrum of semiconductor-quantum-point, the band gap that is semiconductor-quantum-point has bigger blue shift with respect to the body material, and along with reducing of size, the blue shift quantitative change is big, causes the phenomenons such as blue shift of absorption spectrum and photoluminescence spectra aspect optical property.Because quantum limitation effect makes quantum dot demonstrate very strong optical nonlinearity.Aspect electrical properties, because in quantum dot, electric charge also quantization can take place, electronics can only pass through quantum dot singly, thereby has the coulomb blockade effect.Another key character is a surface effects, along with reducing of semiconductor nano grain-size, the specific surface area ratio of quantum dot total atom number (the surface atom number with) is increasing, the surface atom number is more and more, when being of a size of 5nm, the surface atom number accounts for more than 50%, and when size is reduced to 2nm, the surface atom number accounts for more than 80%, thereby the effect on surface is more and more stronger.Because the coordination deficiency of surface atom, surfactivity strengthens.Transporting and structure again of surface atom causes the variation of multiple character such as its mechanical property, thermal property, chemical property.The dimensional effect of quantum dot and surface effects have become the important topic of semiconductor-quantum-point research field.
Existing quantum dot thin-film material often adopts method preparations such as molecular beam epitaxy, high vacuum chemical vapour deposition or metal organic chemical vapor deposition, but quantum dot thin-film material with prior art for preparing, production cost height not only, complex process, and be unfavorable for large-scale industrial production etc.
Summary of the invention
The object of the present invention is to provide a kind of cost low, technology is simple, and be easy to the preparation method of the Ge quantum dot thin-film material of suitability for industrialized production, with obtain high-density, size evenly, can satisfy the Ge/Si multilayer film self-assembled Ge quantum dot of quantum size effect, to satisfy the application demand of optoelectronic information device thin-film material.
Technical problem to be solved by this invention is: under the actual Heating temperature condition of lower Si (100) substrate, by ion beam sputtering, realize the complete crystallization of Ge, Si unitary film, again in conjunction with double ion beam sputtered, difference sputtering sedimentation Si space layer, Ge quantum dot layer, thereby obtain high-density, size evenly, satisfy the Ge/Si multilayer film self-assembled Ge quantum dot of quantum size effect, fully to satisfy the application need of optoelectronic information device thin-film material.
The present invention realizes by following technical proposal: a kind of preparation method of low temperature double ion beam sputtered Ge/Si multilayer film self-assembled Ge quantum dot, comprise the ionic fluid vacuum sputtering, and use argon (Ar) gas as working gas, it is characterized in that at growth room's background pressure less than 3.0 * 10
-4Pa, substrate temperature are 200 ℃～400 ℃, and working gas (Ar) pressure is 1.0 * 10
-2Pa～4.0 * 10
-2Under the condition of Pa, on silicon (Si) substrate, replace sputtering sedimentation Si space layer and Ge quantum dot layer with double-ion beam.Every alternating growth one deck Si space layer, one deck Ge quantum dot layer are one-period, during first end cycle, Ge quantum dot size distribution inequality, succeeding layer Ge quantum dot distribution order, size homogeneity are improved, the surface strains potential field effect that one deck Ge quantum dot is produced before promptly making full use of, the ordering growth of realization succeeding layer Ge quantum dot.
Described double ion beam sputtered, one of them ionic fluid is used for sputter Ge target, another ionic fluid is used for sputter Si target, and be 0.2KV～2KV at ion beam sputtering line voltage, line is 10mA～20mA, the sputter rate of Si layer is 0.04nm/s～0.06nm/s, and the sputter rate of Ge layer is under the condition of 0.04nm/s～0.08nm/s, alternating sputtering Si space layer and Ge quantum dot layer.
Described double ion beam sputtered, all the other processing condition are: anode tube voltage is 70V～80V, and acceleration voltage is 100V～200V, and discharging current is 0.2A～0.3A, and heater current is 5A～9A, and the acceleration electric current is 0mA.
Described double ion beam sputtered be by placing two ion beam sputtering rifles in the growth room to finish, one of them ion beam sputtering rifle sputter Ge target, another ion beam sputtering rifle sputter Si target.
Described double ion beam sputtered, be that sputter thickness is the Si buffer layer of 300nm～500nm on the Si substrate of (100) in the crystal orientation in advance, replacing sputter thickness again on the Si buffer layer is the Si space layer of 10nm～30nm, thickness is the Ge quantum dot layer of 5MLs～10MLs, 10～50 cycles of sputter (wherein, 1MLs=0.14nm), finish as the block layer with growth quantum point Ge layer at last.
Described double ion beam sputtered, with prior art Si (100) substrate is carried out following processing in advance:
A, selection crystal orientation are the Si single-sided polishing substrate of (100), earlier with toluene ultrasonic cleaning 20 minutes, remove the top layer organism, used the acetone ultrasonic cleaning afterwards 10 minutes, cleaned 10 minutes with the dehydrated alcohol circulating ultrasonic again, acetone, dehydrated alcohol replace ultrasonic cleaning and once are one-period, wash 3～5 cycles altogether, to remove toluene, acetone and inorganics foreign ion;
B, the Si substrate that will clean are put into the hydrofluoric acid diluting soln, promptly be 40% HF solution by concentration: the volume ratio of pure water=1: 40, the solution with hydrofluoric acid dilution back gained soaks 10～20s, float Si substrate surface zone of oxidation, the nitrogen with purity 5N dries up again;
C, with the Si substrate that the B step process is crossed, put into the sputter growth room, be evacuated to pressure less than 3 * 10
-4Pa with Si substrate heat temperature raising to 500 ℃, kept 3～5 minutes, made surperficial Si-H key scission of link desorption go out H, was cooled to 200 ℃～400 ℃ again, and Ar gas to the growth room's pressure that charges into purity and be 5N in the sputter growth room is 1.0 * 10
-2Pa～4.0 * 10
-2Pa is 10mA～20mA at the ionic fluid line, and line voltage is under the condition of 1KV～2KV, and the sputter growth thickness is the Si buffer layer of 300nm～500nm, and the sputter rate of Si layer is 0.04nm/s～0.06nm/s.
Described double ion sputter deposits Si space layer and Ge quantum dot layer by following concrete grammar alternating sputtering:
A, be 1KV～2KV at line voltage, line is under the condition of 10mA～20mA, and with one of them ion beam sputtering rifle, the sputter growth thickness is the Si space layer of 10nm～30nm on the Si buffer layer, and the sputter rate of Si layer is 0.04nm/s～0.06nm/s;
B, be 0.2KV～1KV at line voltage, line is under the condition of 10mA～20mA, and with another ion beam sputtering rifle, the sputter growth thickness is the Ge quantum dot layer of 5MLs～10MLs on the Si space layer, and the sputter rate of Ge layer is 0.04nm/s～0.08nm/s;
C, under the condition identical with steps A, the sputter growth thickness is the Si space layer of 10nm～30nm on the Ge of B step quantum dot layer, again under the condition identical with step B, the sputter growth thickness is the Ge quantum dot layer of 5MLs～10MLs on the Si space layer, 10～50 cycles of alternating sputtering like this, finish as the block layer with growth quantum point Ge layer at last, get the Ge/Si multilayer film thin-film material that Si space layer and Ge quantum dot layer form.
The present invention has following advantage and effect: adopt such scheme, promptly under lower Si substrate heating temperature condition, by double-ion beam alternating sputtering deposition Si space layer and Ge quantum dot layer, the surface strains potential field effect that one deck Ge quantum dot is produced before utilizing, realize the ordering growth of succeeding layer Ge quantum dot, and make Ge, Si unitary film crystallization is complete, design by processing parameter, when guaranteeing that outgoing Ar ion has higher-energy, obtain less Ge, Si layer sputter rate, to improve thin film surface planeness and quality of forming film, obtained high-density, size is even, can satisfy the Ge/Si multilayer film self-assembled Ge quantum dot of quantum size effect, solve the problem compatible mutually with integrated circuit processing technique.Production cost of the present invention is low, is easy to commercial scale production, can fully satisfy the application need of optoelectronic information device thin-film material.
Embodiment
Below by embodiment the present invention is described further.
Embodiment 1
Equipment used is the FJL560III type ultrahigh vacuum(HHV) magnetic control and the ionic fluid associating sputtering equipment of prior art, settles two ion beam sputtering rifles in the growth room, and an ion gun is used for sputter Ge target, and another ion gun is used for sputter Si target.Used target is high-purity Si box-shaped target and the high-purity Ge box-shaped target of purity 5N (content is more than 99.999%).It is the P type single crystalline Si sheet of (100) that used Si substrate material adopts the crystal orientation, single-sided polishing, and resistivity is 5 Ω/cm.The sputter gas high-purity argon gas of purity 5N.Commercial ultrasonic cleaning machine is used in ultrasonic cleaning.Specifically:
With prior art Si (100) substrate is carried out following processing:
A, selection crystal orientation are the Si single-sided polishing substrate of (100), earlier with toluene ultrasonic cleaning 20 minutes, remove the top layer organism, used the acetone ultrasonic cleaning afterwards 10 minutes, cleaned 10 minutes with the dehydrated alcohol circulating ultrasonic again, acetone, dehydrated alcohol replace ultrasonic cleaning and once are one-period, wash 3 cycles altogether, to remove toluene, acetone and inorganics foreign ion;
B, the Si substrate that will clean are put into the hydrofluoric acid diluting soln, promptly be 40% HF solution by concentration: the volume ratio of pure water=1: 40, the solution with hydrofluoric acid dilution back gained soaks 10s, float Si substrate surface zone of oxidation, the nitrogen with purity 5N dries up again;
C, with the Si substrate that the B step process is crossed, put into the sputter growth room, be evacuated to pressure less than 3 * 10
-4Pa with Si substrate heat temperature raising to 500 ℃, kept 3 minutes, made surperficial Si-H key scission of link desorption go out H, was cooled to 200 ℃ again, and Ar gas to the vacuum tightness that charges into purity and be 5N in the sputter growth room is 1.0 * 10
-2Pa is 10mA at the ionic fluid line, and line voltage is under the condition of 2KV, and the sputter growth thickness is the Si buffer layer of 300nm, and the sputter rate of Si layer is 0.06nm/s.
Deposit Si space layer and Ge quantum dot layer with following method alternating sputtering:
A, be 2KV at line voltage, line is under the condition of 10mA, and with one of them ion beam sputtering rifle, the sputter growth thickness is the Si space layer of 10nm on the Si buffer layer, and the sputter rate of Si layer is 0.04nm/s;
B, be 0.2KV at line voltage, line is under the condition of 10mA, and with another ion beam sputtering rifle, the sputter growth thickness is the Ge quantum dot layer of 5MLs on the Si space layer, and the sputter rate of Ge layer is 0.04nm/s;
C, under the condition identical with steps A, the sputter growth thickness is the Si space layer of 10nm on the Ge of B step quantum dot layer, again under the condition identical with step B, the sputter growth thickness is the Ge quantum dot layer of 5MLs on the Si space layer, 10 cycles of alternating sputtering like this, finish as the block layer with growth quantum point Ge layer at last, get the Ge/Si multilayer film thin-film material that Si space layer and Ge quantum dot layer form.
Embodiment 2
Equipment used and material are all identical with embodiment 1.Specifically:
With prior art Si (100) substrate is carried out following processing:
A, selection crystal orientation are the Si single-sided polishing substrate of (100), earlier with toluene ultrasonic cleaning 20 minutes, remove the top layer organism, used the acetone ultrasonic cleaning afterwards 10 minutes, cleaned 10 minutes with the dehydrated alcohol circulating ultrasonic again, acetone, dehydrated alcohol replace ultrasonic cleaning and once are one-period, wash 5 cycles altogether, to remove toluene, acetone and inorganics foreign ion;
B, the Si substrate that will clean are put into the hydrofluoric acid diluting soln, promptly be 40% HF solution by concentration: the volume ratio of pure water=1: 40, the solution with hydrofluoric acid dilution back gained soaks 20s, float Si substrate surface zone of oxidation, the nitrogen with purity 5N dries up again;
C, with the Si substrate that the B step process is crossed, put into the sputter growth room, wait to be evacuated to pressure less than 3 * 10
-4Pa with Si substrate heat temperature raising to 500 ℃, kept 5 minutes, made surperficial Si-H key scission of link desorption go out H, was cooled to 400 ℃ again, and Ar gas to the vacuum tightness that charges into purity and be 5N in sputtering chamber is 4.0 * 10
-2Pa is 20mA at the ionic fluid line, and line voltage is under the condition of 1KV, and the sputter growth thickness is the Si buffer layer of 500nm, and the sputter rate of Si layer is 0.06nm/s.
Deposit Si space layer and Ge quantum dot layer with following method alternating sputtering:
A, be 1KV at line voltage, line is under the condition of 20mA, and with one of them ion beam sputtering rifle, the sputter growth thickness is the Si space layer of 30nm on the Si buffer layer, and the sputter rate of Si layer is 0.06nm/s;
B, be 1KV at line voltage, line is under the condition of 20mA, and with another ion beam sputtering rifle, the sputter growth thickness is the Ge quantum dot layer of 10MLs on the Si space layer, and the sputter rate of Ge layer is 0.08nm/s;
C, under the condition identical with steps A, the sputter growth thickness is the Si space layer of 30nm on the Ge of B step quantum dot layer, again under the condition identical with step B, the sputter growth thickness is the Ge quantum dot layer of 10MLs on the Si space layer, 50 cycles of alternating sputtering like this, finish as the block layer with growth quantum point Ge layer at last, get the Ge/Si multilayer film thin-film material that Si space layer and Ge quantum dot layer form.
Embodiment 3
Equipment used and material are all identical with embodiment 1.Specifically:
With prior art Si (100) substrate is carried out following processing:
A, selection crystal orientation are the Si single-sided polishing substrate of (100), earlier with toluene ultrasonic cleaning 20 minutes, remove the top layer organism, used the acetone ultrasonic cleaning afterwards 10 minutes, cleaned 10 minutes with the dehydrated alcohol circulating ultrasonic again, acetone, dehydrated alcohol replace ultrasonic cleaning and once are one-period, wash 4 cycles altogether, to remove toluene, acetone and inorganics foreign ion;
B, the Si substrate that will clean are put into the hydrofluoric acid diluting soln, promptly are 40% HF solution by concentration: the volume ratio of pure water=1: 40, and the solution with hydrofluoric acid dilution back gained soaks 15s, floats Si sheet surface oxide layer, and the nitrogen with purity 5N dries up again;
C, with the Si substrate that the B step process is crossed, put into the sputter growth room, wait to be evacuated to pressure less than 3 * 10
-4Pa with Si substrate heat temperature raising to 500 ℃, kept 4 minutes, made surperficial Si-H key scission of link desorption go out H, was cooled to 300 ℃ again, and Ar gas to the vacuum tightness that charges into purity and be 5N in sputtering chamber is 2.0 * 10
-2Pa is 10mA at the ionic fluid line, and line voltage is under the condition of 1.5KV, and the sputter growth thickness is the Si buffer layer of 400nm, and the sputter rate of Si layer is 0.05nm/s.
Deposit Si space layer and Ge quantum dot layer with following method alternating sputtering:
A, be 1.5KV at line voltage, line is under the condition of 15mA, and with one of them ion beam sputtering rifle, the sputter growth thickness is the Si space layer of 20nm on the Si buffer layer, and the sputter rate of Si layer is 0.05nm/s;
B, be 0.6KV at line voltage, line is under the condition of 15mA, and with another ion beam sputtering rifle, the sputter growth thickness is the Ge quantum dot layer of 8MLs on the Si space layer, and the sputter rate of Ge layer is 0.06nm/s;
C, under the condition identical with steps A, the sputter growth thickness is the Si space layer of 20nm on the Ge of B step quantum dot layer, again under the condition identical with step C, the sputter growth thickness is the Ge quantum dot layer of 8MLs on the Si space layer, 30 cycles of alternating sputtering like this, finish as the block layer with growth quantum point Ge layer at last, get the Ge/Si multilayer film thin-film material that Si space layer and Ge quantum dot layer form.
Take out Ge/Si multilayer film sample, test is found: thickness of sample is in 500nm to 2000nm scope, through the Raman spectrum test, at 295cm
-1To 300cm
-1Ge-Ge key longitudinal optical phonon crystallization peak appears in scope, at 510cm
-1To 520cm
-1Si-Si key longitudinal optical phonon crystallization peak appears in scope, and a little less than intensity shaded, the little broadening of peak shape illustrated that Si space layer and Ge quantum dot layer have all obtained crystallization.And at 400cm
-1To 430cm
-1Occur faint Si-Ge key interface in the scope and mix the peak mutually, illustrate that the Si space layer has formed with Ge quantum dot layer interface atom and become bond to close; The XRD small-angle diffraction calculate to show, Si space layer thickness between 10nm to 30nm, Ge quantum dot layer thickness at 5MLs (1ML=0.14nm) between the 10MLs.Surface topography atomic force microscope AFM schemes to show that along with the Si substrate heating temperature raises for 200 ℃ to 400 ℃ gradually, ascending gathering has taken place upper layer Ge quantum dot grows up, and the acquisition area density is about 10
10Individual every cm
2The top layer Ge quantum dot of magnitude, high 2nm to 1nm, wide 10nm to 30nm.Illustrate that ion beam sputtering can be used for preparing the more complete Ge/Si multilayer film self-assembled Ge quantum dot of structure.
Claims (7)
1, a kind of preparation method of low temperature double ion beam sputtered Ge/Si multilayer film self-assembled Ge quantum dot comprises the ionic fluid vacuum sputtering, and uses argon (Ar) gas as working gas, it is characterized in that at growth room's background pressure less than 3.0 * 10
-4Pa, substrate temperature are 200 ℃～400 ℃, and working gas (Ar) pressure is 1.0 * 10
-2Pa～4.0 * 10
-2Under the condition of Pa, on silicon (Si) substrate, replace sputtering sedimentation Si space layer and Ge quantum dot layer with double-ion beam.
2, method according to claim 1, it is characterized in that described double ion beam sputtered, one of them ion beam sputtering Ge target, another ion beam sputtering Si target, at line voltage is 0.2KV～2KV, and line is 10～20mA, and the sputter rate of Si layer is 0.04nm/s～0.06nm/s, the sputter rate of Ge layer is under the condition of 0.04nm/s～0.08nm/s, alternating sputtering Si space layer and Ge quantum dot layer.
3, method according to claim 1, it is characterized in that described double ion beam sputtered be by placing two ion beam sputtering rifles in the sputter growth room to finish, one of them ion gun sputter Ge target, another ion gun sputter Si target.
4, method according to claim 1, it is characterized in that described double ion beam sputtered, be that sputter thickness is the Si buffer layer of 300nm～500nm on the Si substrate of (100) in the crystal orientation in advance, replacing sputter thickness again on the Si buffer layer is the Si space layer of 10nm～30nm, thickness is the Ge quantum dot layer of 5MLs～10MLs, in 10～50 cycles of sputter, finish as the block layer with growth quantum point Ge layer at last.
5, method according to claim 1 is characterized in that described double ion beam sputtered by following concrete grammar alternating sputtering deposition Si space layer and Ge quantum dot layer:
A, be 1KV～2KV at line voltage, line is under the condition of 10mA～20mA, and with one of them ion beam sputtering rifle, the sputter growth thickness is the Si space layer of 10nm～30nm on the Si buffer layer, and the sputter rate of Si layer is 0.04nm/s～0.06nm/s;
B, be 0.2KV～1KV at line voltage, line is under the condition of 10mA～20mA, and with another ion beam sputtering rifle, the sputter growth thickness is the Ge quantum dot layer of 5MLs～10MLs on the Si space layer, and the sputter rate of Ge layer is 0.04nm/s～0.08nm/s;
C, under the condition identical with steps A, the sputter growth thickness is the Si space layer of 10nm～30nm on the Ge of B step quantum dot layer, again under the condition identical with step C, the sputter growth thickness is the Ge quantum dot layer of 5MLs～10MLs on the Si space layer, 10～50 cycles of alternating sputtering like this, finish as the block layer with growth quantum point Ge layer at last, get the Ge/Si multilayer film thin-film material that Si space layer and Ge quantum dot layer form.
6, method according to claim 5, it is characterized in that described all the other double ion beam sputtered processing condition are: anode tube voltage is 70V～80V, and acceleration voltage is 100V～200V, and discharging current is 0.2A～0.3A, heater current is 5A～9A, and the acceleration electric current is 0mA.
7, method according to claim 1 is characterized in that described double ion beam sputteredly, with prior art Si (100) substrate is carried out following processing in advance:
A, selection crystal orientation are the Si single-sided polishing substrate of (100), earlier with toluene ultrasonic cleaning 20 minutes, remove the top layer organism, used the acetone ultrasonic cleaning afterwards 10 minutes, cleaned 10 minutes with the dehydrated alcohol circulating ultrasonic again, acetone, dehydrated alcohol replace ultrasonic cleaning and once are one-period, wash 3～5 cycles altogether, to remove toluene, acetone and inorganics foreign ion;
B, the Si substrate that will clean are put into the hydrofluoric acid diluting soln, promptly be 40% HF solution by concentration: the volume ratio of pure water=1: 40, the solution with hydrofluoric acid dilution back gained soaks 10～20s, float Si sheet surface oxide layer, the nitrogen with purity 5N dries up again;
C, with the Si substrate that the B step process is crossed, put into the sputter growth room, wait to be evacuated to pressure less than 3 * 10
-4Pa with Si substrate heat temperature raising to 500 ℃, kept 3～5 minutes, made surperficial Si-H key scission of link desorption go out H, was cooled to 200 ℃～400 ℃ again, and Ar gas to the vacuum tightness that charges into purity and be 5N in sputtering chamber is 1.0 * 10
-2Pa～4.0 * 10
-2Pa is 10mA～20mA at the ionic fluid line, and line voltage is under the condition of 1KV～2KV, and the sputter growth thickness is the Si buffer layer of 300nm～500nm, and the sputter rate of Si layer is 0.04nm/s～0.06nm/s.
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| CN101866832A (en) * | 2010-05-25 | 2010-10-20 | 云南大学 | Method for intermittently growing single-layer Ge quantum dots with high dimensional homogeneity on buffer layer by landfill |
| CN103489939A (en) * | 2012-06-14 | 2014-01-01 | 苏州协鑫工业应用研究院有限公司 | Multi-junction heterogeneous quantum dot array and manufacturing method thereof and multi-junction heterogeneous quantum dot solar cell and manufacturing method thereof |
| CN105088342A (en) * | 2015-09-16 | 2015-11-25 | 云南大学 | Preparation method and application of Ge quantum dots |
| CN106756856A (en) * | 2016-12-01 | 2017-05-31 | 云南大学 | A kind of method that ion beam sputtering technology prepares high crystalline Ge/Si multilayer films |
| CN106847952A (en) * | 2016-12-14 | 2017-06-13 | 中国科学院上海微系统与信息技术研究所 | Infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type is near |
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| CN1747130A (en) * | 2005-08-18 | 2006-03-15 | 南京大学 | Production of Si-base quantum point structure based on metal induced crystallizing process |
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| CN101866832A (en) * | 2010-05-25 | 2010-10-20 | 云南大学 | Method for intermittently growing single-layer Ge quantum dots with high dimensional homogeneity on buffer layer by landfill |
| CN101866832B (en) * | 2010-05-25 | 2011-07-20 | 云南大学 | Method for intermittently growing single-layer Ge quantum dots with high dimensional homogeneity on buffer layer by landfill |
| CN103489939A (en) * | 2012-06-14 | 2014-01-01 | 苏州协鑫工业应用研究院有限公司 | Multi-junction heterogeneous quantum dot array and manufacturing method thereof and multi-junction heterogeneous quantum dot solar cell and manufacturing method thereof |
| CN103489939B (en) * | 2012-06-14 | 2016-04-20 | 苏州协鑫工业应用研究院有限公司 | Many knots hetero quntum point array and preparation method thereof and many knot hetero quntum point solar cells and preparation method thereof |
| CN105088342A (en) * | 2015-09-16 | 2015-11-25 | 云南大学 | Preparation method and application of Ge quantum dots |
| CN105088342B (en) * | 2015-09-16 | 2017-09-29 | 云南大学 | A kind of preparation method and applications of Ge quantum dots |
| CN106756856A (en) * | 2016-12-01 | 2017-05-31 | 云南大学 | A kind of method that ion beam sputtering technology prepares high crystalline Ge/Si multilayer films |
| CN106847952A (en) * | 2016-12-14 | 2017-06-13 | 中国科学院上海微系统与信息技术研究所 | Infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type is near |
| CN108493402A (en) * | 2018-04-12 | 2018-09-04 | 太原科技大学 | The method for preparing lithium-sulphur cell positive electrode piece using ion beam sputtering technology |
| CN108493402B (en) * | 2018-04-12 | 2021-04-02 | 太原科技大学 | Method for preparing lithium-sulfur battery positive plate by ion beam sputtering technology |
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| CN100537831C (en) | 2009-09-09 |
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