CN109301022A - Based on (InxGa1-x)2O3Two stage ultraviolet electrical part and preparation method thereof - Google Patents
Based on (InxGa1-x)2O3Two stage ultraviolet electrical part and preparation method thereof Download PDFInfo
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- CN109301022A CN109301022A CN201810900497.0A CN201810900497A CN109301022A CN 109301022 A CN109301022 A CN 109301022A CN 201810900497 A CN201810900497 A CN 201810900497A CN 109301022 A CN109301022 A CN 109301022A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 26
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 13
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000013077 target material Substances 0.000 claims description 9
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 8
- 238000005477 sputtering target Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 7
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 230000006698 induction Effects 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract description 4
- 239000010931 gold Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The present invention relates to one kind to be based on (InxGa1‑x)2O3Two stage ultraviolet electrical part and preparation method thereof, which comprises choose substrate；Surface grows (In over the substratexGa1‑x)2O3Material forms ultraviolet light absorbing layer；Au and In, which is grown, in the upper surface of the ultraviolet light absorbing layer forms interdigital electrode.The device includes substrate layer, (InxGa1‑x)2O3Ultraviolet light absorbing layer and interdigital electrode, wherein the interdigital electrode is unsymmetric structure, including Au electrode section and In electrode section with different finger beams.It should be based on (InxGa1‑x)2O3Two stage ultraviolet electrical part in the case where high In component, (InxGa1‑x)2O3The separation that phase can occur generates two optical band gaps, to generate induction to two ultraviolet spectral ranges, and has confession electrical characteristics.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to one kind is based on (InxGa1-x)2O3Two stage ultraviolet electricity
Device and preparation method thereof.
Background technique
Ultraviolet light refers to that wavelength just contains ultraviolet light in 400nm electromagnetic radiation below, sunlight, can reach earth table
Face is mainly black light (300-400nm).Deep ultraviolet light (300nm or less) due in atmosphere ozone it is strong absorption very
Hardly possible reaches earth surface, but it is present in other radiation sources such as electric arc, guided missile plumage cigarette.Ultraviolet detector military, medicine,
The fields such as environmental monitoring, which suffer from, to be widely applied, wherein the ultraviolet detector for specific band Response to selection especially induces one to infuse
Mesh.Since by the interference of visible light and other wave band ultraviolet lights, this kind of detector does not often have very high needle to detection target
To property.
Currently, most of UV photodetector can only detect the signal in relatively simple spectral response range, however,
It requires that multiple spectral response models can be detected simultaneously for light WDM technology, multispectral survey instrument and laser warning etc.
Interior optical signal is enclosed, therefore the UV photodetector for developing multispectral response range has very future probes multi-wave signal
Important meaning.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides one kind to be based on (InxGa1-x)2O3It is double
Wave band ultraviolet light photo device and preparation method thereof.The technical problem to be solved in the present invention is achieved through the following technical solutions:
One aspect of the present invention provides a kind of based on (InxGa1-x)2O3Two stage ultraviolet electrical part preparation side
Method, which comprises
Choose substrate；
Surface grows (In over the substratexGa1-x)2O3Material forms ultraviolet light absorbing layer；
Au and In, which is grown, in the upper surface of the ultraviolet light absorbing layer forms interdigital electrode.
In one embodiment of the invention, substrate is chosen, comprising:
Choose twin polishing, with a thickness of 200-600 μm of c surface sapphire as substrate.
In one embodiment of the invention, surface grows (In over the substratexGa1-x)2O3Material forms ultraviolet light
Absorbed layer, comprising:
Using magnetron co-sputtering in the sputtering of the upper surface of the substrate with a thickness of the (In of 300 ± 5nmxGa1-x)2O3Material
Form ultraviolet light absorbing layer.
In one embodiment of the invention, using magnetron co-sputtering the substrate upper surface sputtering with a thickness of
(the In of 300 ± 5nmxGa1-x)2O3Material forms ultraviolet light absorbing layer, comprising:
Mass percent purity is selected to be greater than 99.99% Ga2O3Material and quality are greater than 99.99% In than purity2O3
Material is as sputtering target material；
Using mass percent purity be 99.999% argon gas and mass percent purity be 99.999% oxygen as
Sputter gas is passed through sputtering chamber；
It is 4 × 10 in vacuum degree-4Pa, argon flow 20cm3/ s, oxygen flow 5cm3/ s, target cardinal distance be 5cm,
Under conditions of underlayer temperature is 610 ± 5 DEG C, 1h is sputtered in the upper surface of the substrate using magnetic control co-sputtering method；
In-situ annealing 2h under the conditions of 750 ± 5 DEG C of temperature forms (InxGa1-x)2O3Ultraviolet light absorbing layer.
In one embodiment of the invention, the Ga2O3The sputtering power of material is 100W, the In2O3Material splashes
Penetrating power is 50-90W.
In one embodiment of the invention, in the upper surface of the ultraviolet light absorbing layer, growth Au and In forms interdigital electricity
Pole, comprising:
Metal Au of the mass percent purity greater than 99.99% and quality is selected to be greater than 99.99% metal In than purity
As sputtering target material；
Sputtering chamber is passed through as sputter gas using the argon gas that mass percent purity is 99.999%；
It is 4 × 10 in vacuum degree using interdigital electrode mask plate-4Pa, argon flow 20cm3/ s, target cardinal distance are
5cm, operating current be 1A under conditions of, using magnetically controlled sputter method the ultraviolet light absorbing layer upper surface splash-proofing sputtering metal Au
With metal In, interdigital electrode is formed.
Another aspect provides one kind to be based on (InxGa1-x)2O3Two stage ultraviolet electrical part, including by
The substrate layer, (In of the preparation of preparation method described in any one of above-described embodimentxGa1-x)2O3Ultraviolet light absorbing layer and interdigital
Electrode；Wherein, the interdigital electrode is unsymmetric structure, including Au electrode section and In electrode section with different finger beams.
In one embodiment of the invention, in (the InxGa1-x)2O3In, the value range of x is 0.58-0.76.
In one embodiment of the invention, the substrate layer with a thickness of 200-600 μm, (the InxGa1-x)2O3It is purple
Outer light absorbing layer with a thickness of 300 ± 5nm, the interdigital electrode with a thickness of 120 ± 5nm.
In one embodiment of the invention, it is 200 μm that the finger of the interdigital electrode is 2800 μm a length of, refers to spacing；It is described
The finger beam of Au electrode section is 400 μm, and the finger beam of the In electrode section is 200 μm.
Compared with prior art, the beneficial effects of the present invention are:
1, of the invention based on (InxGa1-x)2O3Two stage ultraviolet electrical part, in the case where high In component,
(InxGa1-x)2O3The separation that phase can occur generates two optical band gaps, i.e., generates induction to two ultraviolet spectral ranges, therefore
The optical signal in two spectral response ranges can be detected simultaneously, additionally, due to the asymmetry of electrode, cause the potential barrier on both sides high
It spends different, is capable of forming confession electrical characteristics.
2, of the invention based on (InxGa1-x)2O3Two stage ultraviolet electrical part preparation method, by preparing
Adjustment parameter in journey can obtain (the In with high In ingredientxGa1-x)2O3Layer, so that (InxGa1-x)2O3Point of phase can occur
From to generate two optical band gaps.
3, interdigital electrode of the invention is prepared using two different electrode materials, can be generated biggish photoelectric current, be made
The fast response time of detector is obtained, and generated two waveband peak value is obvious.
Detailed description of the invention
Fig. 1 is provided in an embodiment of the present invention a kind of based on (InxGa1-x)2O3Two stage ultraviolet electrical part preparation
Method flow diagram；
Fig. 2 is provided in an embodiment of the present invention a kind of based on (InxGa1-x)2O3Two stage ultraviolet electrical part preparation
Equipment structure chart；
Fig. 3 is a kind of structural schematic diagram of asymmetric interdigital electrode mask plate provided in an embodiment of the present invention；
Fig. 4 is provided in an embodiment of the present invention a kind of based on (InxGa1-x)2O3Two stage ultraviolet electrical part section
Schematic diagram.
Description of symbols:
1- substrate layer；2- ultraviolet light absorbing layer；3- interdigital electrode layer；31-Au electrode section；32-In electrode section；4- splashes
Penetrate chamber；5- radio-frequency power supply；6- target container；7- target baffle；8- sputter gas air inlet；9- pump-line；10- substrate gear
Plate；11- pallet；The base 12- heating dish；13- whirler.
Specific embodiment
The content of present invention is further described combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Referring to Figure 1, Fig. 1 is provided in an embodiment of the present invention a kind of based on (InxGa1-x)2O3Two stage ultraviolet electricity
The preparation method flow chart of device.The preparation method includes:
S1: substrate is chosen；
Specifically, choose twin polishing, with a thickness of 200-600 μm of c surface sapphire as substrate.Preferably, the lining
Bottom with a thickness of 500 μm.
S2: surface grows (In over the substratexGa1-x)2O3Material forms ultraviolet light absorbing layer；
Using magnetron co-sputtering in the sputtering of the upper surface of the substrate with a thickness of the (In of 300 ± 5nmxGa1-x)2O3Material
Form ultraviolet light absorbing layer.Preferably, the described (InxGa1-x)2O3Ultraviolet light absorbing layer with a thickness of 300nm.
Specifically, the S2 includes:
S21: mass percent purity is selected to be greater than 99.99% Ga2O3Material and quality are than purity greater than 99.99%
In2O3Material is as sputtering target material；
S22: the oxygen that the argon gas for being 99.999% with mass percent purity and mass percent purity are 99.999%
It is passed through sputtering chamber simultaneously as sputter gas；
S23: being 4 × 10 in vacuum degree-4Pa, argon flow 20cm3/ s, oxygen flow 5cm3/ s, target cardinal distance are
Under conditions of 5cm, underlayer temperature are 610 ± 5 DEG C, 1h is sputtered in the upper surface of the substrate using magnetic control co-sputtering method；
Herein, target cardinal distance refers to sputtering target material the distance between to substrate base.
S24: in-situ annealing 2h under the conditions of 750 ± 5 DEG C of temperature, form (InxGa1-x)2O3Ultraviolet light absorbing layer.
In the present embodiment, the Ga2O3The sputtering power of material is 100W, the In2O3The sputtering power of material is
50-90W.It is possible to further by changing In2O3The sputtering power of material obtains having different In contents
(InxGa1-x)2O3Ultraviolet light absorbing layer, for example, working as In2O3Sputtering power be 60W when, x=0.51 works as In2O3Sputtering function
When rate is 80W, x=0.67 works as In2O3Sputtering power be 90W when, x=0.71 etc..In the present embodiment, pass through adjusting
In2O3The sputtering power of material the, so that (In generatedxGa1-x)2O3The value range of middle x is 0.58-0.76.
Since In component is in Ga2O3In dissolution have certain saturation degree just will appear two after reaching saturation
Phase mutually separates, meet for two and generate two different band gap, so as to generate induction to two wave bands.
S3: Au and In is grown in the upper surface of the ultraviolet light absorbing layer and forms interdigital electrode.
Specifically, the S3 includes:
S31: metal Au of the mass percent purity greater than 99.99% and quality is selected to be greater than 99.99% gold than purity
Belong to In as sputtering target material；
S32: sputtering chamber is passed through as sputter gas using the argon gas that mass percent purity is 99.999%；
S33: using interdigital electrode mask plate, is 4 × 10 in vacuum degree-4Pa, argon flow 20cm3/ s, target cardinal distance
Under conditions of being 1A for 5cm, operating current, using magnetically controlled sputter method the ultraviolet light absorbing layer upper surface splash-proofing sputtering metal
Au and metal In forms interdigital electrode.
Fig. 2 is referred to, Fig. 2 is provided in an embodiment of the present invention a kind of based on (InxGa1-x)2O3Two stage ultraviolet electricity
The Preparation equipment structure chart of device.As shown, the Preparation equipment includes sputtering chamber 4,5, two target containers of radio-frequency power supply
6, two target baffles 7, sputter gas air inlet 8, pump-line 9, substrate baffle plate 10, substrate pallet 11, silicon disk 12
And whirler 13.Radio-frequency power supply 5 passes through sputtering chamber 4 and is connected to target container 6, for providing power supply for sputtering target material.Target
Material container 6 includes symmetrically placing Ga respectively2O3And In2O3Two target containers of target, two target baffles 7 are separately positioned on
The top of two target containers.Sputter gas air inlet 8 includes that multiple gas pipelines can be arranged, and each leads into different gas
Body, in the present embodiment, sputter gas air inlet 8 can be passed through sputter gas oxygen and argon gas simultaneously.Pump-line 9 is connected to
Vacuum system, for being vacuumized to sputtering chamber 4.The lower end of whirler 13 is sequentially connected silicon disk 12 and substrate bracket
Disk 11 enables to silicon disk 12 and substrate pallet 11 while rotating, to guarantee to deposit in sputtering process in substrate surface
The uniformity of film.
Fig. 3 is referred to, in the present embodiment, Fig. 3 is a kind of asymmetric interdigital electrode exposure mask provided in an embodiment of the present invention
The structural schematic diagram of version.As shown, used interdigital electrode mask plate is unsymmetric structure, including with different finger beams
Two parts.Therefore, the interdigital electrode of generation is unsymmetric structure, including Au electrode section and In electrode portion with different finger beams
Point, wherein a length of 2800 μm of the finger of the interdigital electrode, referring to that spacing is 200 μm, the finger beam of the Au electrode section is 400 μm,
The finger beam of the In electrode section is 200 μm.
It present embodiments provides a kind of based on (InxGa1-x)2O3Two stage ultraviolet electrical part preparation method, pass through
Adjustment parameter during the preparation process can obtain (the In with high In ingredientxGa1-x)2O3Layer, so that (InxGa1-x)2O3It can send out
The separation of raw phase, to generate two optical band gaps.In addition, the interdigital electrode of the present embodiment uses two different electrode materials
Preparation, can generate biggish photoelectric current, so that the fast response time of detector, and generated two waveband peak value is obvious,
This is because the confession energy consumption of detector is derived only from the production of both ends asymmetry electrode difference when the electrode material of interdigital electrode is identical
Raw potential difference, and when electrode material is different, confession energy consumption not only derives from the asymmetry of electrode, also derives from electrode
Potential difference caused by differences in materials.
Embodiment two
On the basis of the above embodiments, present embodiment describes it is a kind of by above-mentioned preparation method prepare based on
(InxGa1-x)2O3Two stage ultraviolet electrical part.Fig. 4 is referred to, Fig. 4 is that one kind provided in an embodiment of the present invention is based on
(InxGa1-x)2O3Two stage ultraviolet electrical part schematic cross-section.The Two stage ultraviolet electrical part successively includes substrate
Layer 1, (InxGa1-x)2O3Ultraviolet light absorbing layer 2 and interdigital electrode 3, wherein the interdigital electrode 3 is unsymmetric structure, including
Au electrode section 31 and In electrode section 32 with different finger beams.
Further, in (the InxGa1-x)2O3In, the value range of x is 0.58-0.76.In component is in Ga2O3In
There is certain saturation degree just will appear two phases after reaching saturation, i.e., mutually separate for dissolution, two generations two of meeting
Different band gap, so as to generate induction to two wave bands.
Further, the substrate layer 1 with a thickness of 200-600 μm, (the InxGa1-x)2O3Ultraviolet light absorbing layer 2
With a thickness of 300 ± 5nm, the interdigital electrode layer 3 with a thickness of 120 ± 5nm.
Further, it is 200 μm that the finger of the interdigital electrode 3 is 2800 μm a length of, refers to spacing；The Au electrode section 31
Finger beam is 400 μm, and the finger beam of the In electrode section 32 is 200 μm.
It present embodiments provides a kind of based on (InxGa1-x)2O3Two stage ultraviolet electrical part, in the feelings of high In component
Under condition, (InxGa1-x)2O3The separation of phase can occur, so that two optical band gaps can be generated, i.e., two ultraviolet spectral ranges are produced
Raw induction, additionally, due to the asymmetry of electrode, causes the barrier height on both sides different, therefore is capable of forming self-powered spy
Property.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. one kind is based on (InxGa1-x)2O3Two stage ultraviolet electrical part preparation method characterized by comprising
Choose substrate；
Surface grows (In over the substratexGa1-x)2O3Material forms ultraviolet light absorbing layer；
Au and In, which is grown, in the upper surface of the ultraviolet light absorbing layer forms interdigital electrode.
2. preparation method according to claim 1, which is characterized in that choose substrate, comprising:
Choose twin polishing, with a thickness of 200-600 μm of c surface sapphire as substrate.
3. preparation method according to claim 1, which is characterized in that surface grows (In over the substratexGa1-x)2O3
Material forms ultraviolet light absorbing layer, comprising:
Using magnetron co-sputtering in the sputtering of the upper surface of the substrate with a thickness of the (In of 300 ± 5nmxGa1-x)2O3Material is formed
Ultraviolet light absorbing layer.
4. preparation method according to claim 3, which is characterized in that using magnetron co-sputtering the substrate upper table
(the In that face sputters with a thickness of 300 ± 5nmxGa1-x)2O3Material forms ultraviolet light absorbing layer, comprising:
Mass percent purity is selected to be greater than 99.99% Ga2O3Material and quality are greater than 99.99% In than purity2O3Material
As sputtering target material；
Using mass percent purity be 99.999% argon gas and mass percent purity be 99.999% oxygen as sputtering
Gas is passed through sputtering chamber；
It is 4 × 10 in vacuum degree-4Pa, argon flow 20cm3/ s, oxygen flow 5cm3/ s, target cardinal distance are 5cm, substrate temperature
Under conditions of degree is 610 ± 5 DEG C, 1h is sputtered in the upper surface of the substrate using magnetic control co-sputtering method；
In-situ annealing 2h under the conditions of 750 ± 5 DEG C of temperature forms (InxGa1-x)2O3Ultraviolet light absorbing layer.
5. the preparation method according to claim 4, which is characterized in that the Ga2O3The sputtering power of material is 100W, institute
State In2O3The sputtering power of material is 50-90W.
6. preparation method according to claim 1, which is characterized in that grow Au in the upper surface of the ultraviolet light absorbing layer
Interdigital electrode is formed with In, comprising:
Metal Au of the mass percent purity greater than 99.99% and quality is selected to be greater than 99.99% metal In conduct than purity
Sputtering target material；
Sputtering chamber is passed through as sputter gas using the argon gas that mass percent purity is 99.999%；
It is 4 × 10 in vacuum degree using interdigital electrode mask plate-4Pa, argon flow 20cm3/ s, target cardinal distance are 5cm, work
Make electric current be 1A under conditions of, using magnetically controlled sputter method the ultraviolet light absorbing layer upper surface splash-proofing sputtering metal Au and metal
In forms interdigital electrode.
7. one kind is based on (InxGa1-x)2O3Two stage ultraviolet electrical part, which is characterized in that including by claim 1 to 6
Substrate layer made of described in any item preparation methods (1), (InxGa1-x)2O3Ultraviolet light absorbing layer (2) and interdigital electrode
(3)；Wherein, the interdigital electrode (3) is unsymmetric structure, including Au electrode section (31) and In electrode with different finger beams
Partially (32).
8. Two stage ultraviolet electrical part according to claim 7, which is characterized in that in (the InxGa1-x)2O3In, x
Value range be 0.58-0.76.
9. Two stage ultraviolet electrical part according to claim 7, which is characterized in that the substrate layer (1) with a thickness of
200-600 μm, (the InxGa1-x)2O3Ultraviolet light absorbing layer (2) with a thickness of 300 ± 5nm, the thickness of the interdigital electrode (3)
Degree is 120 ± 5nm.
10. the Two stage ultraviolet electrical part according to any one of claim 7-9, which is characterized in that the interdigital electricity
It is 200 μm that the finger of pole (3) is 2800 μm a length of, refers to spacing；The finger beam of the Au electrode section (31) is 400 μm, the In electrode
Partially the finger beam of (32) is 200 μm.
Priority Applications (1)
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