CN107482109A - A kind of room temperature terahertz detector based on graphene thermal electrical effect and preparation method thereof - Google Patents

A kind of room temperature terahertz detector based on graphene thermal electrical effect and preparation method thereof Download PDF

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Publication number
CN107482109A
CN107482109A CN201710529441.4A CN201710529441A CN107482109A CN 107482109 A CN107482109 A CN 107482109A CN 201710529441 A CN201710529441 A CN 201710529441A CN 107482109 A CN107482109 A CN 107482109A
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graphene
room temperature
terahertz detector
effective district
electrical effect
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罗小青
王长
谭智勇
曹俊诚
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions

Abstract

The present invention relates to a kind of room temperature terahertz detector based on graphene thermal electrical effect and preparation method thereof, the detector includes silicon substrate, the SiO on silicon substrate2Film, positioned at SiO2Graphene effective district and antenna on film；The graphene effective district both ends Ohm contact electrode uses the metal material of different work functions difference thermal conductivity.Preparation method includes：1) oxygen plasma etch goes out the graphene effective district of device；2) wet etching SiO2Film, produce back-gate electrode；3) THE STUDY ON THE GRAPHITE alkene effective district raceway groove；4) electron beam evaporation evaporation drain-source electrodes Au and Ti；5) anneal.The room temperature terahertz detector responsiveness and high sensitivity of the present invention, preparation technology is simple, and cost is low, has a good application prospect.

Description

A kind of room temperature terahertz detector based on graphene thermal electrical effect and preparation method thereof
Technical field
The invention belongs to terahertz detector field, more particularly to a kind of room temperature Terahertz based on graphene thermal electrical effect Detector and preparation method thereof.
Background technology
THz wave (THz) is the electromagnetic wave that frequency is 0.3THz-30THz, and positioned at infrared between millimeter wave, it is applied Have been limited to high power and highly sensitive THz source and terahertz detector.Compared with conventional light source, Terahertz tool There are the excellent properties such as relevant, photon energy is low, penetration power is strong, in biomedicine, Non-Destructive Testing, safety check imaging, radar communication etc. Application field has important application prospect.Terahertz Technology is once applied to military communication, battle reconnaissance, anti-stealthy and electronics The fields such as war, it will bring profound influence to current military field.
Terahertz detector is the Primary Component that Terahertz Technology moves towards application.Currently used terahertz detector includes Thermal detector and photoconductive detector.Wherein thermal detector mainly includes pyroelectricity detector (pyroelectric Detector) and liquid helium cooling micromachined silicon bolometer.With the continuous improvement of thermal detector performance, using above-mentioned device The 2-dimensional array detector that part makes is rapidly developed, and has been successfully applied at present in terahertz imaging system.THz wave The photoconductive detector early stage of section predominantly mixes the germanium photoconductive detector of gallium and the gallium arsenide detector of N-type body material.It is existing Commercial detector the problems such as sensitivity is low, noise equivalent power is high or response speed is slow be present.
Graphene is the electrically tunable New Two Dimensional electron gas material of a kind of high mobility, zero band gap, fermi level, is had It is non-linear transport, the excellent specific property such as wideband light absorbs, high electric heating conductance, theoretical and experimental results in recent years show, utilize stone Black alkene can design new terahertz photoelectric detector.At this stage, the terahertz detector based on graphene mainly has three classes：Deng The enhanced FET terahertz detector of ion bulk wave, graphene heterojunction detector, thermoelectric effect detector etc..
The theory carried out both at home and abroad to graphene thermal electrical effect shows that graphene thermal electric explorer has with the research tested Broadband, fast response time, high sensitivity, working and room temperature etc. are better than the advantages of general thermoelectric material.Detector operation principle can Represented with Seebeck formula (Seebeck effect), Be it is microcosmic locally respond voltage, S is Seebeck Coefficient is related to electrical conductivity and fermi level It is thermograde.Terahertz fuel factor detector The main mal-distribution for getting down to device temperature, Seebeck coefficient of development, existing many progress in the world, but all do not have In combination with both, fuel factor explorer response rate is improved, and the THz devices developed before do not account for THz electric field With the coupling of antenna, experiment proves the THz electric field sound that can strengthen detector same with the inhomogeneities of the coupling of antenna Should rate and sensitivity.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of room temperature terahertz detection based on graphene thermal electrical effect Device and preparation method thereof, the explorer response rate and high sensitivity, preparation technology is simple, and cost is low, before having good application Scape.
A kind of room temperature terahertz detector based on graphene thermal electrical effect of the present invention, the detector serve as a contrast including silicon Bottom, the SiO on silicon substrate2Film, positioned at SiO2Graphene effective district and antenna on film；The graphene is effective Area both ends Ohm contact electrode uses the metal material of different work functions difference thermal conductivity.
The metal material of the different work functions difference thermal conductivity is respectively Au and Ti.
The antenna is dipole antenna, resonant frequency 1-3THz, asymmetric.
The graphene effective district left end electric field is weak, right-hand member electric-field strength.
A kind of preparation method of room temperature terahertz detector based on graphene thermal electrical effect of the present invention, including：
(1) go out the graphene effective district of device by oxygen plasma etch in graphenic surface, remove unnecessary graphite Alkene；
(2) wet etching SiO is passed through2Film, produce back-gate electrode；
(3) by graphene effective district by electron beam exposure, develop graphene effective district raceway groove；
(4) drain-source electrodes Au and Ti are deposited by electron beam evaporation in above-mentioned graphene effective district side, finally moved back Fire, produce room temperature terahertz detector.
Graphene effective district channel length in the step (3) is 1 μm.
Annealing temperature in the step (4) is 400-500 DEG C, annealing time 40-50min.
According to Seebeck effect formula, pyroelectric effect voltage and Seebeck coefficient S and thermogradeIt is directly related, be Response device rate is reached maximum, the asymmetry of both distribution should be caused to reach maximum.The detector of the present invention fills Divide the asymmetry using both.First, Seebeck coefficient is determined by the fermi level and its electrical conductivity of graphene, in metal electricity Pole and the contact area of graphene, the fermi level of graphene are influenceed by metal, and electronics transfer occurs.It is deposited at graphene both ends Metal material with different work functions, the Seebeck coefficient of graphene effective district is asymmetric, produces remaining Pyroelectric response. Co, Ni, Ti, Pd belong to the stronger metal of adhesiveness, and the doping to graphene is all n-type doping；Al, Ag, Cu, Au, Pt belong to The bad metal of adhesiveness, the doping to graphene are n-type or p-type (corresponding positive and negative opposite Seebeck coefficient).Consider, Electrode metal selects Ti and Au.Second, temperature gradient distribution on the one hand with the phase such as metallic thermal conductivity, metal thickness, physical dimension Close, pass through comsol Multiphysics Computer Aided Designs, it may be determined that preferable design so that asymmetry is maximum.It is several The thermal conductivity of kind common metal is respectively Au, Al, Mo, Ni, Ti from high to low.On the other hand, antenna can regulate and control THz electric field Distribution so that the coupling efficiency of graphene and THz electric field is asymmetric, and the absorption of energy is uneven, reaches regulating and controlling temperature gradient The effect of field distribution.Antenna is emulated using CST design environments, and (field strength is big for combine antenna resonant frequency, coupling efficiency It is small) and THz electric field mal-distribution, specific Antenna Design and simulation result are shown in Fig. 3.
Beneficial effect
The room temperature terahertz detector responsiveness and high sensitivity of the present invention, makes full use of Terahertz energy coupling not right Title, metal heat sink thermal conductivity asymmetry, electrode size asymmetry etc. realize that the performance of pyroelectric effect maximizes；Preparation technology letter Single, cost is low, has a good application prospect.
Brief description of the drawings
Fig. 1 and Fig. 2 is the structural representation of the present invention；
Fig. 3 is the antenna analogous diagram of the present invention；
Fig. 4 is the Seebeck coefficient and Temperature Distribution schematic diagram of the present invention.
Embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content of the invention lectured has been read, people in the art Member can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited Scope.
Embodiment 1
According to Fig. 1 and Fig. 2, a kind of room temperature terahertz detector based on graphene thermal electrical effect is present embodiments provided, The detector includes silicon substrate, the SiO on silicon substrate2Film, positioned at SiO2Graphene effective district and day on film Line；The graphene effective district both ends Ohm contact electrode uses Au and Ti.Au and Ti has different work functions and and graphite The different exercising result of alkene, passes through the calculating of the first qualitative principles, it can be deduced that the Seebeck coefficient distribution under electrode influences, such as Fig. 3.The thermal conductivity of both ends Ohm contact electrode is different and different as heat sink size.Au thermal conductivity 317W/m*K, Ti Thermal conductivity 16.7W/m*K (close to the thermal conductivity of steel), and left end thermal dissipation size is larger, so left end radiating is faster, left end It is heat sink lower with the boundary temperature of graphene.Antenna Design is simple dipole antenna, resonant frequency 1-3THz, and antenna is non- Symmetrically, graphene effective district left end electric field is weak, right-hand member electric-field strength.Consider the design of the above, Temperature Distribution schematic diagram is as schemed 4。
Preparation method includes：
(1) go out the graphene effective district of device by oxygen plasma etch in graphenic surface, remove unnecessary graphite Alkene；
(2) wet etching SiO is passed through2Film, produce back-gate electrode；
(3) by graphene effective district by electron beam exposure, length of developing is only the effective district raceway groove of 1 μm of graphene；
(4) drain-source electrodes Au and Ti, last 500 ° of hydrogen are deposited by electron beam evaporation in above-mentioned graphene effective district side Anneal 40min under gas atmosphere, produces room temperature terahertz detector.

Claims (7)

  1. A kind of 1. room temperature terahertz detector based on graphene thermal electrical effect, it is characterised in that：The detector serves as a contrast including silicon Bottom, the SiO on silicon substrate2Film, positioned at SiO2Graphene effective district and antenna on film；The graphene is effective Area both ends Ohm contact electrode uses the metal material of different work functions difference thermal conductivity.
  2. A kind of 2. room temperature terahertz detector based on graphene thermal electrical effect according to claim 1, it is characterised in that： The metal material of the different work functions difference thermal conductivity is respectively Au and Ti.
  3. A kind of 3. room temperature terahertz detector based on graphene thermal electrical effect according to claim 1, it is characterised in that： The antenna is dipole antenna, resonant frequency 1-3THz, asymmetric.
  4. A kind of 4. room temperature terahertz detector based on graphene thermal electrical effect according to claim 1, it is characterised in that： The graphene effective district left end electric field is weak, right-hand member electric-field strength.
  5. 5. a kind of preparation method of the room temperature terahertz detector based on graphene thermal electrical effect, including：
    (1) go out the graphene effective district of device by oxygen plasma etch in graphenic surface, remove unnecessary graphene；
    (2) wet etching SiO is passed through2Film, produce back-gate electrode；
    (3) by graphene effective district by electron beam exposure, develop graphene effective district raceway groove；
    (4) drain-source electrodes Au and Ti are deposited by electron beam evaporation in above-mentioned graphene side, are finally annealed, produce room temperature Terahertz detector.
  6. 6. a kind of preparation method of room temperature terahertz detector based on graphene thermal electrical effect according to claim 5, It is characterized in that：Graphene effective district channel length in the step (3) is 1 μm.
  7. 7. a kind of preparation method of room temperature terahertz detector based on graphene thermal electrical effect according to claim 5, It is characterized in that：Annealing temperature in the step (4) is 400-500 DEG C, annealing time 40-50min.
CN201710529441.4A 2017-07-02 2017-07-02 A kind of room temperature terahertz detector based on graphene thermal electrical effect and preparation method thereof Pending CN107482109A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
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CN108022696A (en) * 2017-12-14 2018-05-11 武汉理工大学 A kind of welding method of graphene film
CN108551757A (en) * 2018-01-29 2018-09-18 西安电子科技大学 Based on Meta Materials broadband multi-angle electromagnetic wave absorb
CN108793057A (en) * 2018-07-06 2018-11-13 江苏心磁超导体有限公司 Silicon carbide-based graphene superconduction TES devices and preparation method thereof
CN108899413A (en) * 2018-07-06 2018-11-27 江苏心磁超导体有限公司 Graphene TES superconductive device and preparation method thereof
CN109301022A (en) * 2018-08-09 2019-02-01 西安电子科技大学 Based on (InxGa1-x)2O3Two stage ultraviolet electrical part and preparation method thereof
CN110400855A (en) * 2019-07-10 2019-11-01 中国科学院上海技术物理研究所 A kind of room temperature black phosphorus terahertz detector and preparation method thereof
CN113175991A (en) * 2021-03-19 2021-07-27 清华大学 Detection device and method for realizing terahertz wave detection
CN113790804A (en) * 2021-09-07 2021-12-14 哈尔滨工业大学（深圳） Fatigue driving monitoring and reminding device and method based on intermediate infrared detector
US11222959B1 (en) * 2016-05-20 2022-01-11 Hrl Laboratories, Llc Metal oxide semiconductor field effect transistor and method of manufacturing same

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11222959B1 (en) * 2016-05-20 2022-01-11 Hrl Laboratories, Llc Metal oxide semiconductor field effect transistor and method of manufacturing same
CN108022696A (en) * 2017-12-14 2018-05-11 武汉理工大学 A kind of welding method of graphene film
CN108551757A (en) * 2018-01-29 2018-09-18 西安电子科技大学 Based on Meta Materials broadband multi-angle electromagnetic wave absorb
CN108551757B (en) * 2018-01-29 2019-03-26 西安电子科技大学 Based on Meta Materials broadband multi-angle electromagnetic wave absorb
CN108793057A (en) * 2018-07-06 2018-11-13 江苏心磁超导体有限公司 Silicon carbide-based graphene superconduction TES devices and preparation method thereof
CN108899413A (en) * 2018-07-06 2018-11-27 江苏心磁超导体有限公司 Graphene TES superconductive device and preparation method thereof
CN109301022A (en) * 2018-08-09 2019-02-01 西安电子科技大学 Based on (InxGa1-x)2O3Two stage ultraviolet electrical part and preparation method thereof
CN110400855A (en) * 2019-07-10 2019-11-01 中国科学院上海技术物理研究所 A kind of room temperature black phosphorus terahertz detector and preparation method thereof
CN110400855B (en) * 2019-07-10 2024-03-22 中国科学院上海技术物理研究所 Room-temperature black phosphorus terahertz detector and preparation method thereof
CN113175991A (en) * 2021-03-19 2021-07-27 清华大学 Detection device and method for realizing terahertz wave detection
CN113790804A (en) * 2021-09-07 2021-12-14 哈尔滨工业大学（深圳） Fatigue driving monitoring and reminding device and method based on intermediate infrared detector
CN113790804B (en) * 2021-09-07 2023-10-31 哈尔滨工业大学（深圳） Fatigue driving monitoring reminding device and method based on mid-infrared detector

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Application publication date: 20171215