CN102593235B - Microwave terahertz wave detector and preparation method thereof - Google Patents

Microwave terahertz wave detector and preparation method thereof Download PDF

Info

Publication number
CN102593235B
CN102593235B CN201210073157.8A CN201210073157A CN102593235B CN 102593235 B CN102593235 B CN 102593235B CN 201210073157 A CN201210073157 A CN 201210073157A CN 102593235 B CN102593235 B CN 102593235B
Authority
CN
China
Prior art keywords
grid
terahertz wave
electrode
wave detector
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210073157.8A
Other languages
Chinese (zh)
Other versions
CN102593235A (en
Inventor
蒋春萍
王亦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Institute of Nano Tech and Nano Bionics of CAS
Original Assignee
Suzhou Institute of Nano Tech and Nano Bionics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Institute of Nano Tech and Nano Bionics of CAS filed Critical Suzhou Institute of Nano Tech and Nano Bionics of CAS
Priority to CN201210073157.8A priority Critical patent/CN102593235B/en
Publication of CN102593235A publication Critical patent/CN102593235A/en
Application granted granted Critical
Publication of CN102593235B publication Critical patent/CN102593235B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)

Abstract

The invention discloses a microwave terahertz wave detector and a preparation method thereof, which are characterized in that: a high-electron-mobility transistor is adopted as a basic structure, the detector is provided with a back grid on a table-board of an active region and at least one strip-shaped structure with the length of one micrometer to one millimeter, wherein a positive grid which is in a concave structure or in a fingerlike shape is arranged inside the strip-shaped structure, two ends of the strip-shaped structure are respectively provided with an electrode to be in ohmic contact with a two-dimensional electron-gas passage, a distance between the concave position of the concave structure or a finger and the electrode is 0.5micrometer to 500micrometers, and the etching depth of the back grid is to directly reach the underlay. A complete and feasible preparation method of the detector is provided. By adopting the technical scheme, compared with a traditional detector system, the microwave terahertz wave detector has the remarkable advantages that: power response and frequency response to the radiation of the microwave-terahertz wave can be realized, and practical guarantee can be provided for reducing the complexity and the cost of the detector system.

Description

Microwave terahertz wave detector and preparation method thereof
Technical field
The present invention relates to a kind of microwave-THz wave photovoltaic device, relate in particular to microwave-terahertz wave detector and the manufacturing technology thereof of a kind of responding power simultaneously and frequency.
Background technology
Current, the detector that the overwhelming majority is surveyed for continuous terahertz wave signal both at home and abroad, for example, side bolometer (Bolometer), Golay detector (Golay Cell), pyroelectric detector and Schottky diode etc., only to power response, but the application of THz wave technology often needs to obtain spectrum information, utilize this class detector to carry out frequency sonding and generally by spectrum analysis or heterodyne circuit, realize, it has huge, the complicated and expensive shortcoming of system.Although utilize the Infrared Detectors of sub-band transition in quantum well can avoid above shortcoming, must work at extremely low temperature.And short channel fet based on two-dimentional plasma resonance is also faced with same problem.Along with the rising of temperature, the momentum relaxation time will decline rapidly.This also just means and can only survey higher frequency.
What Chinese patent CN201010505505 was related is the regulation and control based on to two-dimentional plasma wave, realizes the photoconduction of THz wave and surveys.In addition, Chinese patent CN200810036127, the related THZ detector of CN200610025716 and CN200610025716 is all based on sub-band transition in quantum well, to realize the detection of photovoltaic or photoconduction.And above several THZ detectors all can only be directly to power response.And will directly respond frequency, also must set up complicated light path system.
Summary of the invention
In view of above-mentioned prior art aspect terahertz detection defect, the object of this invention is to provide a kind of microwave terahertz wave detector and preparation method thereof, solve power and the frequency that THz wave surveys and respond simultaneously.
Above-mentioned first object of the present invention, microwave terahertz wave detector, take High Electron Mobility Transistor as basic structure, described High Electron Mobility Transistor has substrate, resilient coating, two-dimensional electron gas passage, separator, doped layer and block layer, it is characterized in that: the table top of described detection in active area is provided with back of the body grid and the list structure of at least one length between 1 μ m to 1mm, in described list structure, be provided with and be concave structure or with the positive grid of finger-like, the two ends of list structure form the electrode with two-dimensional electron gas passage ohmic contact, and described concave structure recess or refer to that with the spacing of electrode be 0.5 μ m to 500 μ m, wherein said back of the body grid etching depth is through substrate.
Further, the described positive grid with finger-like are for to be combined into and to be exposed to list structure Width and grid structure in the form of sheets by Ni/Au, Ti/Au or Cr/Au.The recess of described concave structure or refer to be located at the middle part of strip structure or partially a side.
Further, the table top of described active area is provided with the list structure that two above series connection connect altogether.
Further, described electrode is square-shaped electrode, butterfly electrode or logarithm spiral electrode.
Further, described High Electron Mobility Transistor is GaAs/AlGaAs heterostructure, a kind of in GaN/AlGaN heterostructure or InGaAs/InAlAs heterostructure, and in described two-dimensional electron gas passage, two-dimensional electron gas is 10 -10cm -2～10 -13cm -2.
Above-mentioned second object of the present invention, the preparation method of microwave terahertz wave detector, it is characterized in that comprising step: the surface of relative substrate opposite side in I, cleaning High Electron Mobility Transistor heterostructure sample, and heterostructure sample surfaces etching being formed with to the table top in source region, etching is deep to substrate two-dimensional electron gas passage; II, on the table top of active area, etching forms at least one length between the list structure of 1 μ m to 1mm, and on list structure, forms and be concave structure or with the positive grid of finger-like; III, the two ends of list structure with on substrate, adopt photoetching process to prepare source to leak ohmic contact mask and contact mask with positive grid, back-gate electrode, and conductive metal deposition film Ni/Ge/Au/Ni or Ti/Al/Ni/Au successively, at N 2in atmosphere, after annealed alloy, peel off and make ohmic contact layer; IV, by positive grid, the back of the body grid and ohmic contact layer contraposition alignment, and at the metallic film of ohmic contact area surfaces evaporation layer of Ni/Au, Ti/Au or Cr/Au.
Further, the recess of concave structure described in step II or refer to is located at middle part or biasing one side of strip structure.
Further, positive grid with finger-like described in step II are by Ni/Au, Ti/Au or Cr/Au, to be combined into the grid structure of sheet, in step IV after contraposition alignment, at positive gate region surperficial evaporation layer of metal film together with ohmic contact region, form respectively grid structure and electrode, wherein grid structure is for exposing to list structure Width and in the form of sheets.
Further, in step II, adopt the method etching of one of reactive ion etching, Ecr plasma etching or inductively coupled plasma etching to form list structure.
Apply technical scheme of the present invention, the remarkable advantage that compares to traditional preparation technology is: can be auxiliary without relying on any optical element, can realize the power response of microwave-terahertz radiation and frequency are responded simultaneously, for reduction detector system complexity, minimizing cost provide a kind of practical guarantee.
Accompanying drawing explanation
Fig. 1 is that the basic heterostructure of detector of the present invention cuts open a layer schematic diagram.
Fig. 2 is the structure vertical view of detector samples of the present invention.
Fig. 3 is the principle schematic of detector samples of the present invention.
Fig. 4 is the power spectrum response schematic diagram of detector of the present invention.
Fig. 5 is the frequency spectrum response schematic diagram of detector of the present invention.
Embodiment
The present invention has disclosed a kind of microwave terahertz wave detector and preparation method thereof, for the effective approach that provides that power that THz wave surveys and frequency respond is provided simultaneously.
Microwave terahertz wave detector of the present invention be take High Electron Mobility Transistor as basic structure, this High Electron Mobility Transistor is GaAs/AlGaAs heterostructure, a kind of in GaN/AlGaN heterostructure or InGaAs/InAlAs heterostructure, in described two-dimensional electron gas passage, two-dimensional electron gas is 10 -10cm -2～10 -13cm -2.As shown in Figure 1, this High Electron Mobility Transistor has substrate 6, resilient coating 5, active layer 4(two-dimensional electron gas passage), separator 3, doped layer 2, block layer 1.The table top of this detector in active area is provided with the back of the body grid 41,42 and at least one length between the list structure of 1 μ m to 1mm, in this list structure, be provided with and be concave structure or with the positive grid of finger-like, the two ends of list structure form the electrode with two-dimensional electron gas passage ohmic contact, and the recess of concave structure or the positive finger of grid and the spacing of electrode are 0.5 μ m to 500 μ m, be located at middle part or biasing one side of strip structure.Wherein these back of the body grid 41,42 etching depths are through substrate, and positive grid are on block layer.
Technique scheme also has preferred scheme, as shown in Figure 2, positive grid in aforementioned list structure can be the concave structure 31 that list structure width boils down into, and can be to be also located on strip structure to be combined into and to be exposed to list structure Width and grid structure 32 in the form of sheets by Ni/Au, Ti/Au or Cr/Au; The finger of this concave structure recess or positive grid can be positioned at middle part or biasing one side of strip structure.The two ends of this list structure form the electrode 21,22 with two-dimensional electron gas passage ohmic contact, and those electrodes can be square-shaped electrode, butterfly electrode or logarithm spiral electrode.
In addition, the table top of the above-mentioned active area shown in Fig. 2 is provided with two list structures (can be also more than two), and as connecting altogether version, each list structure is in sequential series, further strengthens detectivity.
The present invention realizes the detection to microwave-THz wave by the photovoltaic oscillation effect of special plasma (being edge magnetic plasma) in regulation and control two-dimensional electron gas system.As shown in Figure 3, sample is after microwave-THz wave irradiation, the asymmetry of the Electric Field Distribution that edge magnetic plasma utilize sample under downfield in (kind one-dimensional plasma wave) causes under two different Ohmic electrodes and the non-linear rectification effect of Ohmic electrode realize photovoltaic vibration, thereby can look-in frequency be the electromagnetic wave detection that MHz arrives several THz.
Simultaneously, the present invention also provides a kind of preparation method of microwave terahertz wave detector, comprise step: the surface of relative substrate opposite side in I, cleaning High Electron Mobility Transistor heterostructure sample, and heterostructure sample surfaces etching being formed with to the table top in source region, etching is deep to two-dimensional electron gas passage or substrate; II, on the table top of active area, etching forms at least one length between the list structure of 1 μ m to 1mm, and on list structure, is provided with and is concave structure or with the positive grid of finger-like; III, the two ends of list structure with on substrate, adopt photoetching process prepare source leak ohmic contact mask with just, back-gate electrode contacts mask, and conductive metal deposition film Ni/Ge/Au/Ni or Ti/Al/Ni/Au successively, at N 2in atmosphere, after annealed alloy, peel off and make ohmic contact layer; IV, by positive grid and the back of the body grid and ohmic contact layer contraposition alignment, and at ohmic contact area surfaces evaporation one deck by Ni/Au, Ti/Au or Cr/Au metallic film, be easy to draw electrode
As preferred version, in step II, make positive grid can be the concave structure that list structure width boils down into, can be to be also located on strip structure to be combined into and to expose to list structure Width and grid structure in the form of sheets by Ni/Au, Ti/Au or Cr/Au; This is concave structure recess or positive grid can be positioned at the middle part of strip structure or partially a side.The two ends of this list structure form the electrode 21,22 with two-dimensional electron gas passage ohmic contact, and those electrodes can be square-shaped electrode, butterfly electrode or logarithm spiral electrode.In step IV after contraposition alignment, at positive gate region surperficial evaporation layer of metal film together with ohmic contact region, form respectively grid structure and electrode, wherein grid structure is for exposing to list structure Width and in the form of sheets.
In step II, adopt the method etching of one of reactive ion etching, Ecr plasma etching or inductively coupled plasma etching to form list structure.
Apply technical scheme of the present invention, the remarkable advantage that compares to traditional preparation technology is: can be auxiliary without relying on any optical element, can realize the power response of microwave-terahertz radiation and frequency response, for reduction detector system complexity, minimizing cost provide a kind of practical guarantee.As shown in Figure 4 and Figure 5, be respectively power spectrum response schematic diagram and the frequency spectrum response schematic diagram of detector of the present invention.From illustrating, the detector that is designed, made by the present invention program can be made power-frequency to surveyed object preferably and be responded.
Below be only concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, within all dropping on rights protection scope of the present invention.

Claims (9)

1. microwave terahertz wave detector, take High Electron Mobility Transistor as basic structure, described High Electron Mobility Transistor has substrate, resilient coating, two-dimensional electron gas passage, separator, doped layer and block layer, it is characterized in that: the table top of described detector in active area is provided with that back of the body grid and two above series connection connect altogether, and length is between the list structure of 1 μ m to 1mm, in described list structure, be provided with and be concave structure or with the positive grid of finger-like, the two ends of list structure form the electrode with two-dimensional electron gas passage ohmic contact, and described concave structure recess or refer to that with the spacing of electrode be 0.5 μ m to 500 μ m, wherein said back of the body grid etching depth is through substrate.
2. microwave terahertz wave detector according to claim 1, is characterized in that: with the positive grid of finger-like for to be combined into and to expose to list structure Width and grid structure in the form of sheets by Ni/Au, Ti/Au or Cr/Au.
3. microwave terahertz wave detector according to claim 1, is characterized in that: the recess of described concave structure or refer to be located at middle part or biasing one side of strip structure.
4. microwave terahertz wave detector according to claim 1, is characterized in that: described electrode is square-shaped electrode, butterfly electrode or logarithm spiral electrode.
5. microwave terahertz wave detector according to claim 1, it is characterized in that: described High Electron Mobility Transistor is GaAs/AlGaAs heterostructure, a kind of in GaN/AlGaN heterostructure or InGaAs/InAlAs heterostructure, in described two-dimensional electron gas passage, two-dimensional electron gas is 10 -10cm -2～10 -13cm -2.
6. the preparation method of microwave terahertz wave detector, is characterized in that comprising step:
I, clean in High Electron Mobility Transistor heterostructure sample the surface of substrate opposite side relatively, and heterostructure sample surfaces etching is formed with to the table top in source region, etching is deep to substrate two-dimensional electron gas passage;
II, on the table top of active area, etching forms at least one length between the list structure of 1 μ m to 1mm, and on list structure, forms and be concave structure or with the positive grid of finger-like;
III, the two ends of list structure with on substrate, adopt photoetching process to prepare source to leak ohmic contact mask and contact mask with positive grid, back-gate electrode, and conductive metal deposition film Ni/Ge/Au/Ni or Ti/Al/Ni/Au successively, at N 2in atmosphere, after annealed alloy, peel off and make ohmic contact layer;
IV, by positive grid, the back of the body grid and ohmic contact layer contraposition alignment, and at the metallic film of ohmic contact area surfaces evaporation layer of Ni/Au, Ti/Au or Cr/Au.
7. the preparation method of microwave terahertz wave detector according to claim 6, is characterized in that: the recess of concave structure described in step II or refer to be located at middle part or biasing one side of strip structure.
8. the preparation method of microwave terahertz wave detector according to claim 6, it is characterized in that: the positive grid with finger-like described in step II are by Ni/Au, Ti/Au or Cr/Au, to be combined into the grid structure of sheet, in step IV after contraposition alignment, at positive gate region surperficial evaporation layer of metal film together with ohmic contact region, form respectively grid structure and electrode, wherein grid structure is for exposing to list structure Width and in the form of sheets.
9. the preparation method of microwave terahertz wave detector according to claim 6, is characterized in that: in step II, adopt the method etching of one of reactive ion etching, Ecr plasma etching or inductively coupled plasma etching to form list structure.
CN201210073157.8A 2012-03-19 2012-03-19 Microwave terahertz wave detector and preparation method thereof Active CN102593235B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210073157.8A CN102593235B (en) 2012-03-19 2012-03-19 Microwave terahertz wave detector and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210073157.8A CN102593235B (en) 2012-03-19 2012-03-19 Microwave terahertz wave detector and preparation method thereof

Publications (2)

Publication Number Publication Date
CN102593235A CN102593235A (en) 2012-07-18
CN102593235B true CN102593235B (en) 2014-09-03

Family

ID=46481643

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210073157.8A Active CN102593235B (en) 2012-03-19 2012-03-19 Microwave terahertz wave detector and preparation method thereof

Country Status (1)

Country Link
CN (1) CN102593235B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576832B (en) * 2014-12-31 2017-01-11 中国电子科技集团公司第五十研究所 Blocking impurity band detector manufacturing method based on SOI
CN104596641B (en) * 2015-01-21 2017-03-08 中国科学院半导体研究所 Terahertz wave detector
CN104795461B (en) * 2015-04-14 2016-08-17 中国科学院半导体研究所 The method of GaAs base two-dimensional electron gas plasma concussion terahertz detector
CN109405860B (en) * 2018-09-19 2020-12-29 天津大学 Germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching
CN110854141A (en) * 2019-11-21 2020-02-28 中国电子科技集团公司第四十四研究所 Monolithic integrated balanced photoelectric detector chip and manufacturing method thereof
CN111681935A (en) * 2020-07-15 2020-09-18 余成寅 Novel electromagnetic radiation source system
CN114823976B (en) * 2022-04-22 2024-01-26 中国科学院苏州纳米技术与纳米仿生研究所 Cap-free InP HEMT ohmic contact structure, terahertz detector and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815708B1 (en) * 1999-08-16 2004-11-09 Japan Science And Technology Agency Optical superconducting device
GB2392779B (en) * 2002-09-04 2005-05-04 Teraview Ltd An Emitter
US7420225B1 (en) * 2005-11-30 2008-09-02 Sandia Corporation Direct detector for terahertz radiation
JP2011199241A (en) * 2010-02-24 2011-10-06 Panasonic Corp Terahertz wave receiving device
CN102054891B (en) * 2010-10-13 2012-10-10 中国科学院苏州纳米技术与纳米仿生研究所 Room-temperature terahertz wave detector

Also Published As

Publication number Publication date
CN102593235A (en) 2012-07-18

Similar Documents

Publication Publication Date Title
CN102593235B (en) Microwave terahertz wave detector and preparation method thereof
Wu et al. Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism
Apostolopoulos et al. THz emitters based on the photo-Dember effect
CN102054891B (en) Room-temperature terahertz wave detector
Kanaya et al. Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times
Otsuji et al. Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
Hou et al. A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
CN102445711A (en) THz-wave detector
US20130299773A1 (en) Low voltage nanoscale vacuum electronic devices
Hwang et al. MgZnO/ZnO two-dimensional electron gas photodetectors fabricated by radio frequency sputtering
Khaouani et al. An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: proposal and investigation
CN108061981A (en) Terahertz modulator and preparation method thereof
Kumar et al. Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector
CN105590986A (en) Room temperature terahertz detector based on gallium nitride high electron mobility transistor and preparation method thereof
CN105549227A (en) Terahertz wave space external modulator based on GaN semiconductor material heterojunction field-effect transistor structure
CN203760501U (en) GaN-based plasmon detector
Zhang et al. High-speed transition-metal dichalcogenides based schottky photodiodes for visible and infrared light communication
CN101431106B (en) Plane nano electromagnetic radiator structure based on negative differential mobility
CN204130553U (en) Based on the Schottky type Terahertz multispectrum signal detector of Meta Materials
CN104422517A (en) Terahertz wave frequency spectrum detector
Zhang et al. High speed terahertz modulator based on the single channel AlGaN/GaN high electron mobility transistor
Zou et al. GaN/Gr (2D)/Si (3D) combined high-performance hot electron transistors
Nabet et al. High-speed, high-sensitivity optoelectronic device with bilayer electron and hole charge plasma
CN105870012A (en) Method and system for fabricating recessed gate enhanced high electron mobility transistor (HEMT) device by in-situ etching monitoring
Liu et al. Research on Schottky diode with high rectification efficiency for relatively weak energy wireless harvesting

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant