CN109405860B - Germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching - Google Patents
Germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching Download PDFInfo
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- CN109405860B CN109405860B CN201811094111.8A CN201811094111A CN109405860B CN 109405860 B CN109405860 B CN 109405860B CN 201811094111 A CN201811094111 A CN 201811094111A CN 109405860 B CN109405860 B CN 109405860B
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 24
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/40—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light specially adapted for use with infrared light
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Abstract
A germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching comprises a first germanium-silicon heterojunction bipolar transistor and a second germanium-silicon heterojunction bipolar transistor, bases of the first germanium-silicon heterojunction bipolar transistor and the second germanium-silicon heterojunction bipolar transistor are respectively connected with an antenna, emitters of the first germanium-silicon heterojunction bipolar transistor and the second germanium-silicon heterojunction bipolar transistor are grounded, a collector of the first germanium-silicon heterojunction bipolar transistor is connected to an output end through a first quarter-wavelength microstrip line, a collector of the second germanium-silicon heterojunction bipolar transistor is connected to the output end through a second quarter-wavelength microstrip line, a second capacitor is connected between the base of the first germanium-silicon heterojunction bipolar transistor and the collector of the second germanium-silicon heterojunction bipolar transistor, a second capacitor is connected between the base of the second germanium-silicon heterojunction bipolar transistor and the collector of the first germanium-silicon heterojunction bipolar transistor, the direct current bias wire in the antenna is connected with direct current bias voltage. The invention increases the output responsivity of the detector.
Description
Technical Field
The present invention relates to a transistor detector. In particular to a germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching.
Background
Terahertz waves have many unique characteristics: the penetration characteristic of the terahertz wave enables the terahertz wave to be used for security inspection imaging [1 ]; terahertz waves and blackbody radiation of most of cooling dust after major explosion in the universe are in the same waveband, and imaging the universe by the terahertz waves depicts a more detailed picture [2] for people; the terahertz wave has the same frequency with the vibration of a plurality of biomacromolecules, which opens up a new path [3] [4] for the biomedical detection; the terahertz wave can provide larger bandwidth, and provides possibility for future high-speed wireless communication. At present, the terahertz detector based on the field effect tube structure is provided domestically, but under the same process, the characteristic frequency and the cut-off frequency of the field effect tube are far smaller than those of the germanium-silicon heterojunction bipolar transistor, so that the detector based on the germanium-silicon heterojunction bipolar transistor structure has more advantages in the terahertz field.
The technical problem faced by the terahertz detector is as follows: the power transmission efficiency of the terahertz wave antenna and the SiGe heterojunction bipolar transistor is low; the terahertz waves leak to the output end, so that the output responsivity of the germanium-silicon heterojunction bipolar transistor detector is greatly reduced, and the equivalent noise power of the detector is increased.
Therefore, how to improve the power transmission efficiency of the terahertz detector, how to effectively reduce the leakage of terahertz waves, and how to improve the responsivity of the terahertz detector become problems which need to be solved urgently in the terahertz detection process.
[ REFERENCE ] to
[1]K.Cooper,R.Dengler,N.Llombart,B.Thomas,G.Chattopadhyay,and P.Siegel,“THz imaging radar for standoff personnel screening,”IEEE Trans.THz Sci.Technol.,vol.1,no.1,pp.169–182,Sep.2011.
[2]T.Phillips and J.Keene,“Submillimeter astronomy[heterodyne spectroscopy],”Proc.IEEE,vol.80,no.11,pp.1662–1678,Nov.1992.
[3]Z.Taylor,R.Singh,D.Bennett,P.Tewari,C.Kealey,N.Bajwa,M.Culjat,A.Stojadinovic,H.Lee,J.-P.Hubschman,E.Brown,and W.Grundfest,“THz medical imaging:In vivo hydration sensing,”IEEE Trans.THz Sci.Technol.,vol.1,no.1,pp.201–219,Sep.2011.
[4]K.Ajito,H.J.Song,A.Hirata,A.Wakatsuki,Y.Muramoto,N.Shigekawa,T.Kumashiro,D.Asa,T.Nagatsuma,N.Kukutsu,and Y.Kado,“Continuous-wave terahertz spectroscopic imaging at over 1THz for pharmaceutical applications,”in Proc.Int.Conf.Infrared,Millimeter,Terahertz Waves,Sep.2010,pp.1–2.
Disclosure of Invention
The invention aims to solve the technical problem of providing a germanium-silicon heterojunction bipolar transistor detector which can increase the output responsivity of the detector and is based on direct antenna matching.
The technical scheme adopted by the invention is as follows: a germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching comprises a first germanium-silicon heterojunction bipolar transistor and a second germanium-silicon heterojunction bipolar transistor which are used for detecting, bases of the first germanium-silicon heterojunction bipolar transistor and the second germanium-silicon heterojunction bipolar transistor are respectively connected with an antenna used for receiving terahertz wave signals, emitters of the first germanium-silicon heterojunction bipolar transistor and the second germanium-silicon heterojunction bipolar transistor are grounded, a collector of the first germanium-silicon heterojunction bipolar transistor is connected to an output end through a first quarter-wavelength microstrip line, a collector of the second germanium-silicon heterojunction bipolar transistor is connected to the output end through a second quarter-wavelength microstrip line, and a second capacitor is connected between the base of the first germanium-silicon heterojunction bipolar transistor and the collector of the second germanium-silicon heterojunction bipolar transistor, and a second capacitor is connected between the base electrode of the second germanium-silicon heterojunction bipolar transistor and the collector electrode of the first germanium-silicon heterojunction bipolar transistor, and a direct current bias wire in the antenna is connected with direct current bias voltage.
The antenna comprises a patch antenna composed of metal positioned on the topmost layer, a grounding metal plate composed of metal positioned on the bottommost layer, and a routing wire composed of metal positioned on the upper layer of the grounding metal plate, wherein the routing wire is connected with the patch antenna through a through hole, the through hole is a through hole formed between the center of the patch antenna and the metal positioned on the upper layer of the grounding metal plate, two feeder lines are arranged on the patch antenna, and the two feeder lines are respectively and correspondingly connected with the base electrodes of the first germanium-silicon heterojunction bipolar transistor and the second germanium-silicon heterojunction bipolar transistor.
The germanium-silicon heterojunction bipolar transistor detector based on direct antenna matching solves the problem of low signal power transmission efficiency of a terahertz wave antenna and the germanium-silicon heterojunction bipolar transistor, eliminates terahertz wave signals leaked to an output end, and increases the output responsivity of the detector. The invention has the following beneficial effects:
(1) the input impedance of the antenna and the input impedance of the germanium-silicon heterojunction bipolar transistor are designed elaborately to achieve matching, so that the signal power transmission efficiency can be improved, and the loss of terahertz signals due to matching design is eliminated;
(2) two sections of quarter transmission lines are connected in series with the output end of the collector of the germanium-silicon heterojunction bipolar transistor, terahertz wave signals leaked to the output end can be filtered, the influence of parasitic effect caused by the fact that the collector is connected with direct current bias on the performance of the detector is reduced, and the output of the collector is not influenced.
(3) The differential terahertz signal is transmitted to a collector electrode of the germanium-silicon heterojunction bipolar transistor, so that the output responsivity of the detector can be improved.
Drawings
FIG. 1 is a schematic circuit diagram of a SiGe heterojunction bipolar transistor detector based on direct antenna matching according to the present invention;
fig. 2 is a schematic structural diagram of the antenna of the present invention.
In the drawings
1: antenna 11: grounding metal plate
12: patch antenna 13: DC bias routing
14: through hole 15: feed line
Detailed Description
The invention provides a silicon germanium heterojunction bipolar transistor detector based on antenna direct matching, which is described in detail in the following with reference to the embodiments and the accompanying drawings.
As shown in fig. 1, the sige heterojunction bipolar transistor detector based on antenna direct matching of the present invention includes a first sige heterojunction bipolar transistor B1 and a second sige heterojunction bipolar transistor B2 for detection, bases of the first sige heterojunction bipolar transistor B1 and the second sige heterojunction bipolar transistor B2 are respectively connected to an antenna 1 for receiving a terahertz signal, emitters of the first sige heterojunction bipolar transistor B1 and the second sige heterojunction bipolar transistor B2 are both grounded, a collector of the first sige heterojunction bipolar transistor B1 passes through a first quarter-wavelength W1 to an output terminal S, a collector of the second sige heterojunction bipolar transistor B2 passes through a second quarter-wavelength W2 to the output terminal S, the first quarter-wavelength W1 and the second quarter-wavelength W2 are capable of filtering a terahertz signal leaking to the output terminal, but does not affect the output of the collector. A second capacitor C1 is connected between the base of the first ge-si heterojunction bipolar transistor B1 and the collector of the second ge-si heterojunction bipolar transistor B2, a second capacitor C1 is connected between the base of the second ge-si heterojunction bipolar transistor B2 and the collector of the first ge-si heterojunction bipolar transistor B1, and the dc bias wiring 13 in the antenna 1 is connected to a dc bias voltage V.
As shown in fig. 2, the antenna 1 includes a patch antenna 12 made of metal located at the topmost layer, a grounded metal plate 11 made of metal located at the bottommost layer, and a trace 13 made of metal located on the grounded metal plate 11, where the trace 13 is connected to the patch antenna 12 through a via 14, and the via 14 is a via formed between the center of the patch antenna 12 and the metal located on the grounded metal plate 11, and this connection mode is characterized in that the electromagnetic radiation performance of the antenna is not affected by the dc bias at the center of the antenna, and this bias mode provides a dc path for the ge-si heterojunction bipolar transistor. The patch antenna 12 is provided with two feeder lines 15, and the two feeder lines 15 are respectively and correspondingly connected with the bases of the first germanium-silicon heterojunction bipolar transistor B1 and the second germanium-silicon heterojunction bipolar transistor B2.
The invention discloses a germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching. By adopting the topmost metal as the patch antenna and the bottommost metal as the ground, the design method can separate the terahertz signal from the silicon substrate with low resistivity, so that the radiation efficiency is greatly improved. The center of the antenna is used as a virtual place, and the performance of the antenna is not influenced by adding the direct current offset to the virtual place. When the frequency of the terahertz waves exceeds 2.5THz, the loss of the terahertz waves received by the antenna in the matching network is larger than the effect of matching, so that the frequency exceeding 2.5THz does not adopt the matching network generally. The input impedance of the antenna is matched with the input impedance of the silicon germanium heterojunction bipolar transistor, so that the signal power transmission efficiency can be improved. According to the embodiment of the invention, the transistor with the minimum size is adopted, the input impedance of the transistor with the minimum size obtained according to the processing technology is 100 ohms, and the port impedance of the patch antenna is designed to be 100 ohms, so that the matching between the patch antenna and the transistor is achieved, and the signal power transmission efficiency is improved. In order to increase the responsivity of the terahertz detector, terahertz signals received by the patch antenna are differentially input to a base electrode and a collector electrode of the germanium-silicon heterojunction bipolar transistor. Through reasonably optimizing the direct current bias of the collector, the design mode is higher than the output responsivity of directly inputting the terahertz signal to the base and the collector of the germanium-silicon heterojunction bipolar transistor. A part of terahertz signals received by the antenna are coupled to the output end, so that the output responsivity of the germanium-silicon heterojunction bipolar transistor detector is greatly reduced, and by designing two sections of serially connected quarter-wavelength microstrip lines, the characteristic impedance of the microstrip lines is 100 ohms as same as the input impedance of the germanium-silicon heterojunction bipolar transistor, an alternating current open circuit can be formed at the output end of the detector, and the direct current signals are not influenced, so that terahertz wave signals leaked to the output end are eliminated, and the output responsivity of the detector is improved. In addition, the other function of the two sections of quarter microstrip lines connected in series is to reduce the influence of parasitic effect introduced by the direct current bias connected to the collector on the performance of the detector.
Claims (2)
1. A germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching comprises a first germanium-silicon heterojunction bipolar transistor (B1) and a second germanium-silicon heterojunction bipolar transistor (B2) which are used for detection, and is characterized in that bases of the first germanium-silicon heterojunction bipolar transistor (B1) and the second germanium-silicon heterojunction bipolar transistor (B2) are respectively connected with an antenna (1) which is used for receiving terahertz wave signals, emitters of the first germanium-silicon heterojunction bipolar transistor (B1) and the second germanium-silicon heterojunction bipolar transistor (B2) are grounded, a collector of the first germanium-silicon heterojunction bipolar transistor (B1) is connected to an output end (S) through a first quarter-wavelength microstrip line (W1), a collector of the second germanium-silicon heterojunction bipolar transistor (B2) is connected to the output end (S) through a second quarter-wavelength microstrip line (W2), a first capacitor (C1) is connected between the base of the first germanium-silicon heterojunction bipolar transistor (B1) and the collector of the second germanium-silicon heterojunction bipolar transistor (B2), a second capacitor (C2) is connected between the base of the second germanium-silicon heterojunction bipolar transistor (B2) and the collector of the first germanium-silicon heterojunction bipolar transistor (B1), and a direct current bias wiring (13) in the antenna (1) is connected with a direct current bias voltage (V).
2. The antenna direct matching based silicon germanium heterojunction bipolar transistor detector of claim 1, it is characterized in that the antenna (1) comprises a patch antenna (12) formed by metal positioned at the topmost layer, a grounding metal plate (11) formed by metal positioned at the bottommost layer, a routing wire (13) formed by metal positioned at a layer above the grounding metal plate (11), the trace (13) is connected with the patch antenna (12) through a through hole (14), the through hole (14) is formed between the center of the patch antenna (12) and a layer of metal on the grounding metal plate (11), two feeder lines (15) are arranged on the patch antenna (12), and the two feeder lines (15) are respectively and correspondingly connected with the base electrodes of the first germanium-silicon heterojunction bipolar transistor (B1) and the second germanium-silicon heterojunction bipolar transistor (B2).
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| CN111739950B (en) * | 2019-03-19 | 2022-03-18 | 国家纳米科学中心 | Terahertz photoelectric detector |
| CN110044476B (en) * | 2019-04-04 | 2021-02-12 | 中国科学院上海技术物理研究所 | Terahertz detector based on antiferromagnetic nonmagnetic metal heterojunction |
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| KR20160091008A (en) * | 2015-01-23 | 2016-08-02 | 울산과학기술원 | Teraherta detection device using FET |
| CN105609486A (en) * | 2015-12-25 | 2016-05-25 | 电子科技大学 | Ground shielding structure for millimeter wave/terahertz multi-metal layer semiconductor device |
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